JPS6033912B2 - Manufacturing method of hollow board - Google Patents
Manufacturing method of hollow boardInfo
- Publication number
- JPS6033912B2 JPS6033912B2 JP6296782A JP6296782A JPS6033912B2 JP S6033912 B2 JPS6033912 B2 JP S6033912B2 JP 6296782 A JP6296782 A JP 6296782A JP 6296782 A JP6296782 A JP 6296782A JP S6033912 B2 JPS6033912 B2 JP S6033912B2
- Authority
- JP
- Japan
- Prior art keywords
- glass powder
- substrate
- manufacturing
- hollow
- added
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
- H05K1/053—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an inorganic insulating layer
Landscapes
- Glass Compositions (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は電着法を用いたホーロー基板の製造方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for manufacturing a hollow substrate using an electrodeposition method.
〔発明の技術的背景〕
周知の如く、下地金属の周囲(表面)にホーロ−掛けを
したホーロー基板が知られている。[Technical Background of the Invention] As is well known, a hollow substrate in which the periphery (surface) of a base metal is hollowed is known.
かかる基板は、芯が金属であるため機械的強度が大きく
、かつ熱放射性やコストの点で優れていることより、ハ
イブリッドIC等を実装する回路基板として広く用いら
れている。そして、前記ホーロー掛けの手段としては電
着法、静電塗装法、スプレー法、浸債法及び刷毛塗り法
等種種の方法が挙げられるが、このうち、ピンホール等
の表面欠陥が少なく膜厚が一定で、かつ基板端部におけ
る絶縁耐圧を大きくできる点で雷着法が優れている。〔
背景技術の問題点〕しかし乍ら従釆の霞着法で得られた
ホーロー基板も、尚、ピンホールが多くハイブリッドI
C実装用基板としては不十分である。〔発明の目的〕
本発明は上記事情に鑑みてなされたもので、下地金属周
囲にピンホール等の表面欠陥が少ない一定膜厚のホーロ
−を有し、平坦部は勿論端部の絶縁耐圧の高いホーロー
基板の製造方法を提供することを目的とするものである
。Such a board is widely used as a circuit board on which hybrid ICs and the like are mounted because it has a high mechanical strength because the core is made of metal, and is excellent in terms of heat radiation and cost. There are various methods for enameling, such as electrodeposition, electrostatic coating, spraying, dipping, and brush coating, but among these methods, there are fewer surface defects such as pinholes, and a thicker film. The lightning bonding method is superior in that the voltage is constant and the dielectric strength voltage at the edge of the board can be increased. [
[Problems with the background technology] However, the enamel substrate obtained by the conventional sintering method also has many pinholes and cannot be used for hybrid I.
This is insufficient as a substrate for C mounting. [Object of the Invention] The present invention has been made in view of the above circumstances, and has a hollow with a constant film thickness around the base metal with few surface defects such as pinholes, and has a dielectric strength of not only flat parts but also edge parts. The purpose of the present invention is to provide a method for manufacturing a high-quality hollow substrate.
本出願人は、露着法を用いたガラス被覆法の技術として
、次に示すものを提案した(特公昭56一38058)
。The applicant proposed the following as a glass coating technique using an open deposition method (Japanese Patent Publication No. 56-138058).
.
これは、半導体素子のガラス被覆法(パツシーベション
膜形成)に関し、ガラス粉末1夕当りPぜ+、Zn2十
、舷2十、M〆十、Ce4十、Ce3十、N3十、Ga
2十、La”、Mg2十及びY3十の金属塩のうち少な
くとも一種を、1×10‐5〜2×10‐3モル分散さ
せた有機溶媒系に半導体素子を浸潰させて雷着させる方
法である。そして、このように所定量の金属塩を含む有
機溶媒系を用いると、良好な露着を行なえることが確認
されている。そこで、本発明者等は、半導体素子の代り
に金属に適用し、種々実験を繰り返し行なった結果、P
b2十、Zn2十、B22十、Mn2十、Ce4十、C
e3十、山3十、0a2十、凶2十、Mず十、及びY3
十の金属塩のうち少なくとも一種の金属塩をガラス粉末
に添加し、これを露着法で前記金属に付着させるに際し
、ガラス粉末混合液中にポリエチレングリコールを、ガ
ラス粉末12当り5×10‐4タ以上添加することによ
り、下地金属周囲にピンホール等の表面欠陥が少なく、
膜厚が一定で、かつ平坦部並びに基板端部の絶縁耐圧が
大きいホーロー基板を得るに至った。ここで、露着時の
ガラス粉末の挙動について詳述する。ガラス粉末は一般
に負に帯電しており、Pぜ+、Zn2十、B92十、M
n2十、Ce4十、Ce3十、AI3十、Y3十、Ga
2十、い2十、Mず十等の金属塩を含む溶液中では、所
定の金属塩がガラス粉末の各粒子に吸着されてガラス粉
末を正に帯電させ、電圧が印加されるとガラス粉末を容
易に負極に霞着せしめる。更に、この状態でポIJエチ
レングリコールをガラス粉末1のこ対し5×10‐4タ
以上添加すると、下地金属の周囲に形成されるホーロー
層の厚さが全然添加されない場合と比べ、厚くなる。な
お、添加するポリエチレングリコールの量が5×10‐
4タ未満であると、ピンホール等の結晶欠陥を十分少な
くすることができない。なお、ポリエチレングリコール
の量は、5×10‐2夕を越えても、その効果が変わら
ないため、コストの点からその上限値を5×10‐2g
とするのが望ましい。上言己した条件下で得られるホー
ロー基板において、焼成後のピンホール数は、ポリエチ
レングリコールを添加しない場合と比べ1/5〜1/3
に減少し、ホーロー層の厚みは1.1〜1.4倍増加す
る。また、この厚みが例えば100仏mから130仏m
に増えた場合、絶縁耐圧は約IKV増加する。更に、ホ
ーロー層の厚みは一定となる。〔発明の実施例〕
本発明を参照して説明する。This is related to the glass coating method (passivation film formation) for semiconductor devices, and the following applies to glass powder per night:
A method of immersing a semiconductor element in an organic solvent system in which at least one of metal salts of 20, La", Mg20, and Y30 is dispersed in 1 x 10-5 to 2 x 10-3 mol and depositing it by lightning. It has been confirmed that good exposure can be achieved by using an organic solvent system containing a predetermined amount of metal salts.Therefore, the present inventors investigated the use of metal salts instead of semiconductor elements. As a result of repeated various experiments, P
b20, Zn20, B220, Mn20, Ce40, C
e30, mountain 30, 0a20, evil 20, Mzu10, and Y3
When adding at least one metal salt out of ten metal salts to the glass powder and attaching it to the metal by an exposure method, polyethylene glycol is added to the glass powder mixture at a rate of 5 x 10-4 per 12 glass powders. By adding more than
A hollow substrate with a constant film thickness and a high dielectric strength at the flat portion and at the edge of the substrate was obtained. Here, the behavior of the glass powder during exposure will be explained in detail. Glass powder is generally negatively charged, including Pze+, Zn20, B920, M
n20, Ce40, Ce30, AI30, Y30, Ga
In a solution containing metal salts such as 20, 20, M20, etc., the specified metal salts are adsorbed to each particle of glass powder, positively charging the glass powder, and when a voltage is applied, the glass powder easily causes haze to form on the negative electrode. Furthermore, if 5×10 −4 or more of POIJ ethylene glycol is added to each piece of glass powder in this state, the thickness of the enamel layer formed around the base metal becomes thicker than when it is not added at all. In addition, the amount of polyethylene glycol added is 5 × 10-
If it is less than 4 ta, crystal defects such as pinholes cannot be sufficiently reduced. Furthermore, even if the amount of polyethylene glycol exceeds 5 x 10-2g, the effect will not change, so from the point of view of cost, the upper limit has been changed to 5 x 10-2g.
It is desirable to do so. In the enamel substrate obtained under the above conditions, the number of pinholes after firing is 1/5 to 1/3 compared to when polyethylene glycol is not added.
The thickness of the enamel layer increases by 1.1 to 1.4 times. Also, if this thickness is, for example, 100 m to 130 m
, the dielectric strength increases by about IKV. Furthermore, the thickness of the enamel layer is constant. [Embodiments of the Invention] The present invention will be described with reference to it.
まず、ホーロー用脱炭鋼1の周囲を脱脂、洗浄した後、
無電界ニッケルメッキを施した。First, after degreasing and cleaning the area around the decarburized steel 1 for enamel,
Electroless nickel plating applied.
8Uに下表に示す組成を有するガラス粉末(ガラスフリ
ット)400gを、インプロピルアルコールに溶かして
ガラス粉末混合液1そを得た。400 g of glass powder (glass frit) having the composition shown in the table below was dissolved in 8U of inpropyl alcohol to obtain one glass powder mixture.
次に、エタノール中にMg(N03)2・紺20をIW
t%で溶解した液5にCとの混合液並びにポリエチレン
グリコール(平均分子量300)2gを、前記ガラス粉
末混合液に加えて電解質溶液を調整した。次いで、前記
ホーロー用脱炭鋼1をセットし、電解を行なって脱炭鋼
1の表面にガラスフIJットを竜着した。この後、脱炭
鋼1を1500 Cで1粉ン間乾燥した後、850oC
で3分間焼成して脱炭鋼1の周囲にホーロ−層2を被覆
したホーロ−基板3を製造した。表しかして、上記実施
例によれば、1回の電解で基板3のホーロ一層2の膜厚
を120仏mにすることができ、この膜厚は、ポリエチ
レングリコールPEGを添加しないで得た基板のそれと
比べ、約25一mの増加であった。Next, IW
An electrolyte solution was prepared by adding a mixed solution of C and 2 g of polyethylene glycol (average molecular weight 300) to the solution 5 dissolved at t% to the glass powder mixed solution. Next, the decarburized steel 1 for enamel was set, and a glass fiber IJ was attached to the surface of the decarburized steel 1 by electrolysis. After this, the decarburized steel 1 was dried at 1500 C for 1 minute, and then heated at 850 oC.
A hollow substrate 3 in which a hollow layer 2 was coated around a decarburized steel 1 was manufactured by firing for 3 minutes. According to the above example, the film thickness of the hollow layer 2 of the substrate 3 can be made to 120 meters by one electrolysis, and this film thickness is greater than that of the substrate obtained without adding polyethylene glycol PEG. This was an increase of approximately 251 m compared to that of .
このとき、ホーロー層2の表面は繊密で、その膜厚のバ
ラッキは土4仏mと少なく、かつ肉眼で観察できるピン
ホールは2×3(インチ)基板1成文中に2個しかなか
った。また、基板3のホーロー層2の絶縁耐圧は、平坦
部で2.歌VDC以上、端部で1.がVDC以上で、P
EGを添加しないで得たホーロー基板と比べて平坦部及
び端部共に20%以上増加していることが確認できた。
更に、基板3において脱炭鋼1に対するホーロー層2の
塗着強度は、PEGを添加しないで得たホーロー基板と
比べ約3倍あった。なお、上記実施例では下地金属とし
てホーロー用脱炭鋼を用いたが、例えば、銅等の他の金
属又は合金を用いても、ガラスフリットの組成、製造条
件を適宜選択すれば、上記実施例と同様な効果を有する
ホーロー基板を得ることができる。At this time, the surface of the enamel layer 2 was delicate, and the variation in film thickness was as small as 4 mm, and there were only 2 pinholes that could be observed with the naked eye in a 2 x 3 (inch) substrate. . Further, the dielectric strength voltage of the hollow layer 2 of the substrate 3 is 2. Song VDC or higher, 1 at the end. is above VDC, P
It was confirmed that both the flat portion and the edge portion increased by 20% or more compared to the hollow substrate obtained without adding EG.
Further, in the substrate 3, the adhesion strength of the enamel layer 2 to the decarburized steel 1 was about three times that of the enamel substrate obtained without adding PEG. In the above examples, decarburized steel for enamel was used as the base metal, but other metals or alloys such as copper may also be used, if the composition of the glass frit and manufacturing conditions are appropriately selected. A hollow substrate having similar effects can be obtained.
〔発明の効果〕以上詳述した如く本発明によれば、従来
と比べ下地金属の周囲にピンホールの少ない一定膜厚の
ホーロ−層を有するとともに、端部並びに平坦部の絶縁
耐圧の大きいハイブリッドIC等を実装し得るホーロ−
基板の製造方法を提供できるものである。[Effects of the Invention] As described in detail above, according to the present invention, the hybrid fabric has a hollow layer of a constant thickness with fewer pinholes around the base metal than in the past, and has a high dielectric strength voltage at the edges and flat areas. Hollow material that can be used to mount ICs, etc.
A method for manufacturing a substrate can be provided.
図は、本発明により得られたホーロー基板の断面図であ
る。
1・・・・・・ホー。The figure is a sectional view of a hollow substrate obtained by the present invention. 1... Ho.
Claims (1)
^2^+、Ce^4^+、Ce^3^+、Al^3^+
、Ga^2^+、La^2^+、Mg^2^+及びY^
3^+の金属塩のうち少なくとも一種の金属塩をガラス
粉末に添加し、これを電着法により下地金属周囲に付着
し、焼成を行なつてホーロー基板を製造するに際し、ガ
ラス粉末混合液中にポリエチレングリコールをガラス粉
末1g当り5×10^−^4g以上添加することを特徴
とするホーロー基板の製造方法。1 Pb^2^+, Zn^2^+, Ba^2^+, Mn
^2^+, Ce^4^+, Ce^3^+, Al^3^+
, Ga^2^+, La^2^+, Mg^2^+ and Y^
At least one type of metal salt among the 3^+ metal salts is added to the glass powder, and when it is attached to the surrounding metal base by electrodeposition and fired to produce an enamel substrate, it is added to the glass powder mixture. A method for manufacturing an enamel substrate, characterized in that polyethylene glycol is added in an amount of 5×10^-^4g or more per 1g of glass powder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6296782A JPS6033912B2 (en) | 1982-04-15 | 1982-04-15 | Manufacturing method of hollow board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6296782A JPS6033912B2 (en) | 1982-04-15 | 1982-04-15 | Manufacturing method of hollow board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58181897A JPS58181897A (en) | 1983-10-24 |
| JPS6033912B2 true JPS6033912B2 (en) | 1985-08-06 |
Family
ID=13215610
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6296782A Expired JPS6033912B2 (en) | 1982-04-15 | 1982-04-15 | Manufacturing method of hollow board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6033912B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0635679B2 (en) * | 1985-11-20 | 1994-05-11 | 日立化成工業株式会社 | Enamel board manufacturing method |
-
1982
- 1982-04-15 JP JP6296782A patent/JPS6033912B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58181897A (en) | 1983-10-24 |
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