JPS6037402B2 - How to measure film thickness - Google Patents
How to measure film thicknessInfo
- Publication number
- JPS6037402B2 JPS6037402B2 JP13490680A JP13490680A JPS6037402B2 JP S6037402 B2 JPS6037402 B2 JP S6037402B2 JP 13490680 A JP13490680 A JP 13490680A JP 13490680 A JP13490680 A JP 13490680A JP S6037402 B2 JPS6037402 B2 JP S6037402B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- film thickness
- thickness
- container
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010408 film Substances 0.000 claims description 17
- 239000010409 thin film Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 9
- 238000000691 measurement method Methods 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000005259 measurement Methods 0.000 description 9
- 238000001228 spectrum Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 238000000862 absorption spectrum Methods 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 150000002500 ions Chemical group 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Length Measuring Devices With Unspecified Measuring Means (AREA)
Description
【発明の詳細な説明】
本発明は、蒸着膜などの薄膜材料の膜厚を測定する方法
に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for measuring the thickness of a thin film material such as a deposited film.
従来、膜厚を測定する方法としては、各種の顕微鏡を用
いる方法や、光の干渉を利用する方法などがある。Conventional methods for measuring film thickness include methods using various types of microscopes and methods using light interference.
これらの方法では、特に薄い膜の厚さ測定が困難であっ
た。また、イオンスパッタリングにより薄膜表面から放
出される2次イオンや光子を用いる方法がある。これら
の方法は破壊測定法であり、膜厚を測定した試料を2度
と使用することはできない。本発明は、膜厚を測定後再
びその膜を生長さ.せたり、他の測定に使用できるよう
、非破壊的に膜厚を測定する方法を提供するものである
。まず、本発明による膜厚測定の原理を説明する。With these methods, it is difficult to measure the thickness of particularly thin films. Another method uses secondary ions and photons emitted from the thin film surface by ion sputtering. These methods are destructive measurement methods, and the sample whose film thickness has been measured cannot be used again. In the present invention, after measuring the film thickness, the film is grown again. The present invention provides a method for non-destructively measuring film thickness, which can be used for thinning and other measurements. First, the principle of film thickness measurement according to the present invention will be explained.
一般に、物質は各々個有の光吸収係数を有している。も
ちろん光の波長によってその値は異なる。一定容積、一
定圧力中において物質に光を照射すると、光のエネルギ
ーはその物質により一部吸収される。吸収されたエネル
ギーは熱に変わる。この光から熱への交換係数は、測定
する系の励起状態から基底状態への無放射遷移の確率に
より決まる。最初は、ある一定の圧力に保たれていた測
定容器の中は、その容積が一定であるから、物質からの
熱放射により圧力が増大する。照射光量を一定にすれば
、容器内の圧力変化は物質の存在量により変化する。従
って、ある一定の厚さを有する基板上に蒸着などにより
形成された薄膜が存在する場合、光を照射して容器内の
圧力変化を調べると、基板物質と薄膜物質の各波長にお
ける光吸収係数の和の形で吸収エネルギーのスペクトル
を得ることができる。Generally, each substance has a unique light absorption coefficient. Of course, the value differs depending on the wavelength of the light. When a substance is irradiated with light in a constant volume and pressure, a portion of the energy of the light is absorbed by the substance. The absorbed energy turns into heat. This light-to-heat exchange coefficient is determined by the probability of non-radiative transition from the excited state to the ground state of the system to be measured. Initially, the volume inside the measurement container, which is maintained at a certain pressure, is constant, so the pressure increases due to heat radiation from the substance. If the amount of irradiation light is kept constant, the pressure inside the container will change depending on the amount of substance present. Therefore, when there is a thin film formed by vapor deposition on a substrate with a certain thickness, if you irradiate it with light and examine the pressure change inside the container, you will find that the light absorption coefficient at each wavelength of the substrate material and the thin film material is The absorption energy spectrum can be obtained in the form of the sum of .
そこで、基板の厚さを一定にしておけば、薄膜の膜厚変
化と、各波長での吸収スペクトルの強度変化が対応して
観測される。予め基板物質の種類とその厚み、および薄
膜形成物質の種類とその厚みに対応した吸収スペクトル
を各々作成しておけば、未知試料の基板とその上に形成
された薄膜の厚さと種類を知ることができる。Therefore, if the thickness of the substrate is kept constant, changes in the thickness of the thin film and changes in the intensity of the absorption spectrum at each wavelength can be observed in correspondence. By creating absorption spectra corresponding to the type and thickness of the substrate material and the type and thickness of the thin film forming substance in advance, it is possible to know the thickness and type of the substrate of the unknown sample and the thin film formed on it. I can do it.
.、以下、本発明をその実施例によ
り説明する。.. Hereinafter, the present invention will be explained by way of examples thereof.
第1図は膜厚測定装置の構成を示すブロック図である。
1は光源であり、光源より発した光は、レンズ2により
集光されてモノクロメータ3に入る。FIG. 1 is a block diagram showing the configuration of a film thickness measuring device.
1 is a light source, and light emitted from the light source is focused by a lens 2 and enters a monochromator 3.
この光はモノクロメータ3で分光これ、単色化された後
、チョッパ4でモジュレーションが行われる。パルス状
となった単色光は、レンズ5を通り、測定容器6の試料
Sへ入射する。測定容器の窓材7は、照射する光の波長
(紫外線、可視光線、赤外線など)により交換してもよ
い。通常は、溶融石英製のものを用いる。測定容器6は
容積一定である。容器内の圧力は、〜,Ne,Xe,K
rなどのガスを用いて調整する。8は測定容器内の圧力
の変化を検出するマイクロホンなどの圧力センサで、圧
力の変化を電気信号に変換するものである。This light is separated into monochromatic colors by a monochromator 3, and then modulated by a chopper 4. The pulsed monochromatic light passes through the lens 5 and enters the sample S in the measurement container 6 . The window material 7 of the measurement container may be replaced depending on the wavelength of the irradiated light (ultraviolet rays, visible light, infrared rays, etc.). Usually, one made of fused silica is used. The measuring container 6 has a constant volume. The pressure inside the container is ~, Ne, Xe, K
Adjust using gas such as r. Reference numeral 8 denotes a pressure sensor such as a microphone that detects changes in pressure within the measurement container, and converts changes in pressure into electrical signals.
この電気信号はプリアンプ9により増幅され、ロックィ
ンアンプ10によりチョッパ4の信号と同期した信号と
して取り出される。信号処理は、コンピュータ11を用
いて行うか、またはそのままレコ−ダ12で行う。第2
図は、入射光の波長と吸収エネルギーに対応する測定容
器内の圧力信号の強度を示したものである。スペクトル
aは、基板だけのスペクトル、スペクトルbは、基板お
よび薄膜のスペクトルである。スペクトルaとbでは、
明らかにスペクトルの形状が異なる。膜厚変化に対して
、スペクトルの強度変化が著しい波長の光を用いて、膜
厚と信号強度の関係を調べると、ある範囲において、第
3図の実線で示す比例関係が得られる。第3図の点cと
点dは、基板材料、蒸着膜材料の種類と厚さ、および測
定系の性能に依存する。このような直線を用いて数10
0A以上の厚さの膜を測定することができる。以上のよ
うに、本発明によれば、非破壊測定が可能であり、薄い
膜から厚い膜まで測定することができる。This electrical signal is amplified by a preamplifier 9, and extracted by a lock-in amplifier 10 as a signal synchronized with the signal from the chopper 4. Signal processing is performed by using the computer 11 or directly by the recorder 12. Second
The figure shows the intensity of the pressure signal in the measurement container corresponding to the wavelength of the incident light and the absorbed energy. Spectrum a is a spectrum of only the substrate, and spectrum b is a spectrum of the substrate and thin film. In spectra a and b,
The shapes of the spectra are obviously different. When the relationship between film thickness and signal intensity is investigated using light of a wavelength whose spectrum intensity changes significantly with respect to film thickness changes, a proportional relationship shown by the solid line in FIG. 3 is obtained within a certain range. Points c and d in FIG. 3 depend on the substrate material, the type and thickness of the deposited film material, and the performance of the measurement system. Using such a straight line, calculate the number 10
Films with a thickness of 0A or more can be measured. As described above, according to the present invention, non-destructive measurement is possible, and it is possible to measure from thin to thick films.
また、平均的な情報を得ることができるので、膜厚分布
がある試料の場合でも誤差が小さい等の特徴がある。Furthermore, since average information can be obtained, the method has features such as small errors even in the case of samples with film thickness distribution.
第1図は本発明の実施例における膜厚測定装置の構成を
示すブロック図、第2図は入射光の波長と吸収エネルギ
ーに対応する圧力信号の強度との関係を示す図、第3図
は膜厚と圧力信号の強度との関係を示す図である。
1・・・光源、2,5・・・レンズ、3・・・モノクロ
メータ、4・・・チョッパ、6・・・測定容器、8・・
・圧力センサ、9…プリアンプ、12…レコーダ。
第1図
第2図
第3図FIG. 1 is a block diagram showing the configuration of a film thickness measuring device in an embodiment of the present invention, FIG. 2 is a diagram showing the relationship between the wavelength of incident light and the intensity of a pressure signal corresponding to absorbed energy, and FIG. It is a figure showing the relationship between film thickness and intensity of a pressure signal. 1... Light source, 2, 5... Lens, 3... Monochromator, 4... Chopper, 6... Measuring container, 8...
・Pressure sensor, 9...preamplifier, 12...recorder. Figure 1 Figure 2 Figure 3
Claims (1)
料に光を照射し、吸収されたエネルギーを容器内の圧力
変化として測定することにより、薄膜の膜厚を求めるこ
とを特徴とする膜厚の測定方法。1 A film thickness measurement method characterized by determining the thickness of a thin film by irradiating a thin film sample with light in a container with a constant volume and constant pressure, and measuring the absorbed energy as a pressure change inside the container. Measuring method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13490680A JPS6037402B2 (en) | 1980-09-27 | 1980-09-27 | How to measure film thickness |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13490680A JPS6037402B2 (en) | 1980-09-27 | 1980-09-27 | How to measure film thickness |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5759111A JPS5759111A (en) | 1982-04-09 |
| JPS6037402B2 true JPS6037402B2 (en) | 1985-08-26 |
Family
ID=15139286
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13490680A Expired JPS6037402B2 (en) | 1980-09-27 | 1980-09-27 | How to measure film thickness |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6037402B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2768720B2 (en) * | 1989-03-02 | 1998-06-25 | 三菱電機株式会社 | Coating device |
-
1980
- 1980-09-27 JP JP13490680A patent/JPS6037402B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5759111A (en) | 1982-04-09 |
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