JPS603769B2 - Manufacturing method of electrolytic capacitor - Google Patents
Manufacturing method of electrolytic capacitorInfo
- Publication number
- JPS603769B2 JPS603769B2 JP4253178A JP4253178A JPS603769B2 JP S603769 B2 JPS603769 B2 JP S603769B2 JP 4253178 A JP4253178 A JP 4253178A JP 4253178 A JP4253178 A JP 4253178A JP S603769 B2 JPS603769 B2 JP S603769B2
- Authority
- JP
- Japan
- Prior art keywords
- capacitor element
- liquid
- top surface
- capacitor
- insulating powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 title claims description 41
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000007788 liquid Substances 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 19
- 239000000843 powder Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000012452 mother liquor Substances 0.000 claims description 6
- 238000005470 impregnation Methods 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 238000000197 pyrolysis Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 25
- 239000004809 Teflon Substances 0.000 description 15
- 229920006362 Teflon® Polymers 0.000 description 15
- 229920005989 resin Polymers 0.000 description 14
- 239000011347 resin Substances 0.000 description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- 238000005979 thermal decomposition reaction Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 206010027940 Mood altered Diseases 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Description
【発明の詳細な説明】
本発明は電解コンデンサの製造方法に関し、特に弁作用
を有する金属粉末を所望形状に加圧成形してなるコンデ
ンサェレメントの頂面部より導出された陽極リードへの
半導体層形成部材の這い上り現象を軽減させることを目
的とするものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing an electrolytic capacitor, and more particularly to a method for manufacturing an electrolytic capacitor, and in particular, a method for manufacturing an electrolytic capacitor, in which a semiconductor layer is applied to an anode lead led out from the top surface of a capacitor element formed by pressure-molding metal powder having a valve action into a desired shape. The purpose of this is to reduce the creeping up phenomenon of the forming member.
一般にこの種のコンデンサは例えば第1図に示すように
、タンタル、ニオブ、アルミニウムなどのように弁作用
を有する金属粉末を円柱状に加圧成形し焼結してなるコ
ンデンサェレメントAに予め弁作用を有する金属部材を
陽極リードBとして楯立し、この陽極リードBの突出部
分にL形に屈曲された第1の外部リード部材Cを溶接す
ると共に、第2の外部リード部材Dをコンデンサェレメ
ントAの周面に酸化層、半導体層を介して形成された電
極引出し層Eに半田付けし、然る後、コンデソサヱレメ
ントAを含む主要部分を樹脂材Fにて被覆して構成され
ている。In general, this type of capacitor is made of a capacitor element A made by press-molding metal powder with a valve action such as tantalum, niobium, aluminum, etc. into a cylindrical shape and sintering it, as shown in Figure 1. A functional metal member is set up as an anode lead B, and a first external lead member C bent in an L shape is welded to the protruding portion of this anode lead B, and a second external lead member D is connected to the capacitor. It is constructed by soldering to an electrode lead-out layer E formed on the circumferential surface of element A through an oxide layer and a semiconductor layer, and then covering the main part including condescension element A with resin material F. ing.
ところで、コンデンサェレメントAは陽極り−ドBの突
出部分に第1の外部リード部材Cを溶接するに先立って
、陽極リードBと共に化成処理され、その表面に酸化層
が形成されており、さらにコンデンサェレメントAのみ
を半導体母液に一定時間浸潰した後、200qo以上の
高温雰囲気中において熱分解反応を起させてコンデンサ
ヱレメントAの酸化層上に半導体層が形成されている。By the way, prior to welding the first external lead member C to the protruding portion of the anode lead B, the capacitor element A is subjected to a chemical conversion treatment together with the anode lead B, and an oxide layer is formed on its surface. After only the capacitor element A is immersed in the semiconductor mother liquor for a certain period of time, a thermal decomposition reaction is caused in a high temperature atmosphere of 200 qo or higher to form a semiconductor layer on the oxide layer of the capacitor element A.
しかし乍ら、この熱分解工程において、高温雰囲気中に
挿入されたコンデンサェレメントAはそれ自身の温度が
急激に上昇し、内部に含浸された半導体母液が熱分解反
応を起し内部より水蒸気、窒素酸化物などの分解ガスが
表面層に吹き出してくるために、表面層における熱分解
途中の半導体母液層に気泡が生じ、これが陽極リードB
の突出部分に付着していわゆる半導体層形成部材の這い
上りを構成する。通常、半導体母液の含浸被着−熱分解
操作はコンデンサェレメントAが多孔質であることに鑑
み数回以上繰り返される関係で、熱分解回数の増加によ
って半導体層形成部材の這い上りもさらに進行する煩向
にある。従って、陽極リードBの突出部分に第1の外部
リード部材Cを港懐する際に、第1の外部リード部材C
と這い上った半導体層とが接触して陰極と陽極とが短絡
されてしまい、コンデンサとしての機能を奏しえなくな
るという問題がある。However, in this thermal decomposition process, the temperature of condenser element A inserted into the high-temperature atmosphere rises rapidly, and the semiconductor mother liquor impregnated inside undergoes a thermal decomposition reaction, causing water vapor to flow from inside. As decomposed gases such as nitrogen oxides blow out to the surface layer, bubbles are generated in the semiconductor mother liquid layer in the middle of thermal decomposition in the surface layer, which causes anode lead B.
It adheres to the protruding portion of the semiconductor layer forming member to form a so-called creeping-up portion of the semiconductor layer forming member. Normally, the process of impregnating and depositing the semiconductor mother liquor and thermally decomposing it is repeated several times or more since the capacitor element A is porous, and as the number of thermal decompositions increases, the creeping up of the semiconductor layer forming member further progresses. I'm in a bad mood. Therefore, when attaching the first external lead member C to the protruding portion of the anode lead B, the first external lead member C
There is a problem in that the cathode and the anode are short-circuited due to contact between the capacitor and the semiconductor layer that has climbed up, making it impossible to function as a capacitor.
それ故に、従来にあっては第2図〜第3図に示すように
、コンデンサェレメントAの頂面部にテフロン(商標名
)ワッシャGを、それの中心孔に陽極リードBを挿適す
るようにして装着した構成が採用されている。Therefore, conventionally, as shown in Figures 2 and 3, a Teflon (trade name) washer G was inserted into the top surface of the capacitor element A, and an anode lead B was inserted into the center hole of the washer G. A configuration in which it is installed is adopted.
この方法によれば、陽極リードBの突出部分における半
導体層の這い上り現象を効果的に抑制できる反面、作業
性が悪い上、極めて多大の工数を要するために量産性に
乏しいという欠点がある。本発明はこのような点に鑑み
、半導体層の陽極リードへの這い上り防止効果を何ら顔
なうことなく、作業性を著しく改善しうる電解コンデン
サの製造方法を提供するもので、以下具体的実施例につ
いて第4図を参照して説明する。According to this method, although it is possible to effectively suppress the creeping-up phenomenon of the semiconductor layer at the protruding portion of the anode lead B, there are disadvantages in that it is not easy to work with and requires an extremely large number of man-hours, making it difficult to mass-produce. In view of these points, the present invention provides a method for manufacturing an electrolytic capacitor that can significantly improve workability without sacrificing the effect of preventing the semiconductor layer from creeping up onto the anode lead. An example will be described with reference to FIG.
まず、同図aに示すように、弁作用を有する金属粉末を
円柱状に加圧成形し競結してなるコンヂンサェレメント
ーに予め弁作用を有する金属部村を陽極リード2として
楯立する。First, as shown in Figure a, a metal part having a valve action is attached as an anode lead 2 to a capacitor element formed by press-molding metal powder having a valve action into a cylindrical shape and bonding it together. stand up
そしてこのコンデンサェレメントーを液体3例えば水に
浸潰し、内部に水を含浸させる。尚、液体3は水の他、
アルコール・ァセトンなどの有機溶剤も使用できるが、
経済性の点では水が好適する。次に同図bに示すように
、絶縁性粉末例えば三井フロロケミカル株式会社製の商
品名テフロンFEP(T−120)なる熱可塑性のテフ
ロン樹脂粉末を水に表面活性剤を用いて分散させた液4
′に、コンデンサェレメントーをそれの頂面部laが完
全に浸潰されるように浸債する。この分散液4′の液体
は水の他、有機溶剤なども使用できるが、経済性の点で
は水が好適する。そして一定時間経過後、コンデンサェ
レメント1を引き上げると、同図cに示すようにそれの
頂面部laにはテフロン樹脂粉末液4′が被着される。
尚、この際、コンデンサェレメントーの頂面部laを除
く周面にも液4′が若干被着されるが、コンデンサェレ
メント1に水が含浸されているので、液4′のコンデン
サェレメント内への侵入を防止できる。次に同図dに示
すように、コンデンサェレメント1を洗浄液5例えば水
に、頂面部laが浸潰されないように浸簿し、周面部に
被着されている液4′を除去する。次に同図eに示すよ
うに、コンデンサヱレメント1を例えばヒータ6を用い
た加熱炉内に挿入すると「頂両部laに被着されている
液4′におけるテフロン樹脂粉末は溶融し繊密化される
。次に同図fに示すように、コンデンサェレメントーの
周面に通常の方法によって酸化層、半導体層を介して電
極引出し層7を形成する。そして陽極リード2の突出部
分に第1の外部リード部村8を溶接すると共に、第2の
外部リード部材9を電極引出し層7に半田付けする。然
る後、コンデンサヱレメント1を含む主要部分を樹脂材
10にて被覆して電解コンデンサを得る。このようにコ
ンデンサヱレメント1の頂薗部laへのテフロン樹脂4
の被着はテフロン樹脂粉末を水に分散させてなる液4′
にコンデンサェレメント1を単に浸潰し引き上げること
によって確実に行われているので、従来のテフロンワッ
シャを装着する方法に比し、作業性を著しく改善できる
。This condenser element is then immersed in a liquid 3, for example water, to impregnate the inside with water. In addition to water, the liquid 3 is
Organic solvents such as alcohol and acetone can also be used, but
From an economic point of view, water is preferred. Next, as shown in FIG. 4
Then, the capacitor element is immersed so that its top surface la is completely submerged. As the liquid of this dispersion liquid 4', an organic solvent can be used in addition to water, but water is preferable from the economic point of view. After a certain period of time has elapsed, when the capacitor element 1 is pulled up, the Teflon resin powder liquid 4' is deposited on the top surface la of the capacitor element 1, as shown in FIG.
At this time, some liquid 4' is also deposited on the circumferential surface of the condenser element except for the top surface la, but since the condenser element 1 is impregnated with water, the liquid 4' does not cover the condenser. Intrusion into the element can be prevented. Next, as shown in Figure d, the condenser element 1 is immersed in a cleaning liquid 5, such as water, so that the top surface la is not submerged, and the liquid 4' deposited on the peripheral surface is removed. Next, as shown in FIG. Next, as shown in FIG. At the same time, the first external lead member 8 is welded to the electrode lead layer 7. Then, the main part including the capacitor element 1 is covered with a resin material 10. In this way, the Teflon resin 4 is attached to the top part la of the capacitor element 1.
The coating is done with a liquid 4' made by dispersing Teflon resin powder in water.
Since this is reliably carried out by simply immersing and pulling up the capacitor element 1, the workability can be significantly improved compared to the conventional method of mounting a Teflon washer.
しかも、コンデンサェレメント1への液4′の被着に先
立って、コンデンサェレメント1には液体3が含浸され
ているので、液4′の被着時にそれの頂面部laにはよ
く被着されるものの、頂面部laを除く周面には余り被
着されない。Moreover, since the capacitor element 1 is impregnated with the liquid 3 before the liquid 4' is applied to the capacitor element 1, the top surface la of the liquid 4' is well coated when the liquid 4' is applied. However, the surrounding surfaces other than the top surface portion la are not coated very much.
これがために、周囲に被着した不所望の液4′の洗浄除
去を簡単に行うことができる。尚、コンデンサェレメン
ト1に液体3を含浸しない場合にはコンデンサェレメン
ト1のテフロン樹脂粉末液4′への浸債時に、液4′が
コンデンサェレメント1の多孔都内に浸入被着される。
一旦、孔内に入った液4′のうち、テフロン樹脂粉末は
除去に多大の工数と時間を要するし、充分に除去しない
と所望の静電容量が得られなくなる。又、コンデンサェ
レメントーの頂面部laにおける液4′は加熱操作によ
ってテフロン樹脂粉末が溶融され繊密化されるので、半
導体母液の含浸一熱分解工程における半導体層形成部材
の陽極リード2への這い上りを確実に防止できる。Therefore, it is possible to easily wash away the undesired liquid 4' adhering to the surrounding area. If the capacitor element 1 is not impregnated with the liquid 3, the liquid 4' will infiltrate into the pores of the capacitor element 1 and adhere thereto when the capacitor element 1 is immersed in the Teflon resin powder liquid 4'.
Once the Teflon resin powder in the liquid 4' has entered the hole, it takes a lot of man-hours and time to remove it, and if it is not removed sufficiently, it will not be possible to obtain the desired capacitance. In addition, since the Teflon resin powder in the liquid 4' on the top surface la of the capacitor element is melted and densified by the heating operation, it is transferred to the anode lead 2 of the semiconductor layer forming member in the semiconductor mother liquor impregnation and thermal decomposition process. It is possible to reliably prevent the creeping up of
従って、第1の外部リード部材8の陽極IJ−ド2への
溶接時における陽極と陰極との短絡を皆無にでき、品質
を向上できる。さらには第1の外部リード部材8の陽極
リード2への溶接時における溶接火花によって、頂面部
laにおける半導体層、酸化層が損なわれる傾向にある
が、この実施例によれば、テフロン樹脂4が繊密に被着
されているのでかかるトラブルを完全に防止できる。Therefore, when the first external lead member 8 is welded to the anode IJ-de 2, there is no short circuit between the anode and the cathode, and the quality can be improved. Furthermore, the semiconductor layer and oxide layer on the top surface la tend to be damaged by welding sparks when welding the first external lead member 8 to the anode lead 2. However, according to this embodiment, the Teflon resin 4 Such troubles can be completely prevented since they are tightly adhered.
コンデンサヱレメントlの頂面部laへのテフロン樹脂
層4の形成は上述のように酸化層の形成前に行う他、例
えば形成後に行うこともできる。The formation of the Teflon resin layer 4 on the top surface la of the capacitor element 1 can be carried out before the formation of the oxide layer as described above, or alternatively, for example, after the formation of the oxide layer.
即ち、コンデンサェレメント1に化成処理によって酸化
層を形成した後、コンデンサェレメント1を洗浄液にて
洗浄し乾燥する。そして、コンデンサェレメント1を液
体に浸潰して内部に液体を含浸させる。尚、洗浄液とし
て水を用いる場合には乾燥並びに次工程の含浸操作を省
略できる。そして上記実施例と同様の方法にてコンデン
サェレメント1の頂両部laにテフロン樹脂粉末を主体
とする液4′を被着する。そして、このコンデソサェレ
メント1を加熱炉に入れ、テフロン樹脂粉末を繊密化す
る。この際、加熱温度を半導体母液の熱分解温度以上例
えば具体的には250qo以上に設定し、40分程度加
熱することによってアニール効果が得られる。そして再
化成処理する。この実施例によれば、酸化層の形成後に
テフロン樹脂4が被着されるために、酸化層の形成面積
を増加できる。That is, after forming an oxide layer on the capacitor element 1 by chemical conversion treatment, the capacitor element 1 is washed with a cleaning liquid and dried. Then, the capacitor element 1 is immersed in the liquid to impregnate the inside with the liquid. Note that when water is used as the cleaning liquid, drying and the next step of impregnation can be omitted. Then, a liquid 4' mainly composed of Teflon resin powder is applied to both top portions la of the capacitor element 1 in the same manner as in the above embodiment. Then, this condesosure element 1 is placed in a heating furnace to densify the Teflon resin powder. At this time, an annealing effect can be obtained by setting the heating temperature to a temperature higher than the thermal decomposition temperature of the semiconductor mother liquor, for example, 250 qo or higher, and heating for about 40 minutes. Then, it undergoes reconversion treatment. According to this embodiment, since the Teflon resin 4 is deposited after the oxidized layer is formed, the area where the oxidized layer is formed can be increased.
特にテフロン樹脂粉末の溶融とアニールとを兼ねさせれ
ば一回の加熱処理によってアニール効果を期待できる。
尚、本発明は何ら上記実施例にのみ制約されることなく
、例えば陽極リードはコンデンサェレメントに植立する
他、その表面に溶接することもできるし、その材質も弁
作用を有する金属部材のみに制約されない。又、絶縁性
粉末はテフロンの他、ェポキシ樹脂なども使用しうる。
さらには含浸液体は水の他、有機溶剤なども利用できる
。以上のように本発明によれば、半導体層の陽極リード
への這い上りを確実に防止できる上、作業性をも著しく
改善できる。In particular, if the Teflon resin powder is melted and annealed at the same time, a single heat treatment can produce an annealing effect.
It should be noted that the present invention is not limited to the above-mentioned embodiments; for example, the anode lead may be installed on the capacitor element or may be welded to the surface of the capacitor element, and the material thereof may be limited to metal members having valve action. Not restricted by. In addition to Teflon, epoxy resin or the like may also be used as the insulating powder.
Furthermore, in addition to water, organic solvents can also be used as the impregnating liquid. As described above, according to the present invention, it is possible to reliably prevent the semiconductor layer from creeping up onto the anode lead, and it is also possible to significantly improve workability.
第1図〜第2図は従来例のそれぞれ異つた実施例を示す
正断面図、第3図は第2図の要部分解斜視図、第4図は
本発明方法を説明するための正断面図である。
矛ナ図
才2図
才3図
才4図1 to 2 are front sectional views showing different embodiments of the conventional example, FIG. 3 is an exploded perspective view of the main part of FIG. 2, and FIG. 4 is a front sectional view for explaining the method of the present invention. It is a diagram. Yakuna zuzai 2 zuai 3 zuai 4 zu
Claims (1)
面部より金属部材よりなる陽極リードを導出してなるコ
ンデンサエレメントに、半導体母液の含浸被着−熱分解
工程に先立って、液体を含浸する工程と、コンデンサエ
レメントを絶縁性粉末の分散された絶縁性粉末液に浸漬
し引上げる工程と、コンデンサエレメントの頂面部を除
く周面部に被着された絶縁性粉末液を除去する工程と、
コンデンサエレメントの頂面部上の絶縁性粉末液を加熱
することによって絶縁性粉末を緻密化する工程とを具備
したことを特徴とする電解コンデンサの製造方法。1. A capacitor element made of a metal powder having a valve action and having an anode lead made of a metal member led out from the top surface thereof is impregnated with a liquid prior to the impregnation deposition-pyrolysis process of semiconductor mother liquor. a step of immersing the capacitor element in an insulating powder liquid in which insulating powder is dispersed and pulling it up; a step of removing the insulating powder liquid adhered to the peripheral surface of the capacitor element except for the top surface;
A method for manufacturing an electrolytic capacitor, comprising the step of densifying the insulating powder by heating the insulating powder liquid on the top surface of the capacitor element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4253178A JPS603769B2 (en) | 1978-04-10 | 1978-04-10 | Manufacturing method of electrolytic capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4253178A JPS603769B2 (en) | 1978-04-10 | 1978-04-10 | Manufacturing method of electrolytic capacitor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54134355A JPS54134355A (en) | 1979-10-18 |
| JPS603769B2 true JPS603769B2 (en) | 1985-01-30 |
Family
ID=12638653
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4253178A Expired JPS603769B2 (en) | 1978-04-10 | 1978-04-10 | Manufacturing method of electrolytic capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS603769B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58120641U (en) * | 1982-02-12 | 1983-08-17 | エルナ−株式会社 | solid electrolytic capacitor |
| JPS59135715A (en) * | 1983-01-24 | 1984-08-04 | 日本電気ホームエレクトロニクス株式会社 | Method of producing solid electrolytic condenser |
| JP2711564B2 (en) * | 1989-04-26 | 1998-02-10 | エルナー 株式会社 | Method for manufacturing solid electrolytic capacitor |
| JPH02309618A (en) * | 1989-05-24 | 1990-12-25 | Elna Co Ltd | Manufacture of solid electrolytic capacitor |
-
1978
- 1978-04-10 JP JP4253178A patent/JPS603769B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54134355A (en) | 1979-10-18 |
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