JPS6039078B2 - Method for manufacturing disilanes - Google Patents
Method for manufacturing disilanesInfo
- Publication number
- JPS6039078B2 JPS6039078B2 JP51066231A JP6623176A JPS6039078B2 JP S6039078 B2 JPS6039078 B2 JP S6039078B2 JP 51066231 A JP51066231 A JP 51066231A JP 6623176 A JP6623176 A JP 6623176A JP S6039078 B2 JPS6039078 B2 JP S6039078B2
- Authority
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- Japan
- Prior art keywords
- disilanes
- monosilanes
- mol
- obtaining
- general formula
- Prior art date
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/50—Improvements relating to the production of bulk chemicals
- Y02P20/52—Improvements relating to the production of bulk chemicals using catalysts, e.g. selective catalysts
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- Low-Molecular Organic Synthesis Reactions Using Catalysts (AREA)
Description
【発明の詳細な説明】
本発明はモノシラン類とジシラン類とを再平衡化させて
、工業的に有用なジシラン類を製造する方法に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for producing industrially useful disilanes by re-equilibrating monosilanes and disilanes.
なお、本発明において、モノシラン類およびジシラン類
とは、それぞれSiH4およびSi公のメチルおよび/
または塩素置換体、すなわちメチルクロロシラン類およ
びメチルクロロジシラン類の意味に用いられる。In the present invention, monosilanes and disilanes refer to methyl and/or SiH4 and Si, respectively.
Or it is used to mean chlorine-substituted products, that is, methylchlorosilanes and methylchlorodisilanes.
シリコーン工業においてメチルクロロシラン類を製造す
るのに一般的には金属ケイ素と塩化メチルを原料とする
直接法が行われる。In the silicone industry, methylchlorosilanes are generally produced by a direct process using silicon metal and methyl chloride as raw materials.
この直接法においては必要なモノシラン類を除いた後に
ジシラン類を主成分とするいわゆる高沸点残燈が残る。
この高沸点残澄は近年環境の汚染等の問題から、工業的
に有用な化合物へ転換する急務の問題点が生じつつある
。そこで、近年高沸点残澄中のジシラン類を、種々の方
法でケイ素−ケイ素結合を切断し、有用なモノシラン類
へ転換する試みが数多くなされているが、例えば特公昭
32−686y号、特関昭50−37732号公報など
の方法によりケイ素−ケイ素結合を切断させた場合、高
沸点残澄中に多く含まれるテトラクロロジメチルジシラ
ンにおいては、反応が式‘1}のように進行し、(CH
3)q2SjSiq2(CH3)十Rq額藻(CH3)
RSiC12十(CH3)Sic13
{1}(ただし、Rは水素または1価の
炭化水素基)工業的に非常に有用なジクロロシラン類の
ほかにあまり重要ではないメチルトリクロロシランを多
量に与える結果となる。In this direct method, after removing the necessary monosilanes, a so-called high-boiling afterglow consisting mainly of disilanes remains.
In recent years, there has been an urgent need to convert this high-boiling point residue into industrially useful compounds due to problems such as environmental pollution. Therefore, in recent years, many attempts have been made to convert the disilanes in the high boiling point residue into useful monosilanes by breaking the silicon-silicon bond using various methods. When the silicon-silicon bond is broken by the method described in Publication No. 50-37732, the reaction proceeds as shown in formula '1} in tetrachlorodimethyldisilane, which is abundant in the high-boiling point residue, and (CH
3) q2SjSiq2 (CH3) 10Rq Algae (CH3)
RSiC12 ten (CH3) Sic13
{1} (where R is hydrogen or a monovalent hydrocarbon group) This results in the production of a large amount of industrially very useful dichlorosilanes as well as less important methyltrichlorosilane.
工業的にはこのようなジクロロシラン類も重要であるこ
とはいうまでもないがモノクロロシラン類も非常に有用
なものであり、こういったモノクロロシラン類をジシラ
ン類の鱗裂反応から得ようとする・場合には(CH3)
3SiSiC1(CH3)2,(C瓜)2CISiSi
C1(CH3)2で示される。It goes without saying that such dichlorosilanes are important industrially, but monochlorosilanes are also very useful, and efforts have been made to obtain these monochlorosilanes from the scale-splitting reaction of disilanes. Do/In case (CH3)
3SiSiC1 (CH3)2, (Cmelon)2CISiSi
It is denoted by C1(CH3)2.
モノクロロジシランおよびジクロロジシランが必要とな
る。本発明に類似する方法として石川らによる(石川、
J.○r鱗nometal,Chem,2363(19
70))次式によって示される方法が公知であるが、(
側3SiSi(CH3)3十2(恥3肌蝿(CH3上記
式に於いて生成するテトラメチルシランを反応系外に取
り出す必要があり、収率の低いのが実状である。Monochlorodisilane and dichlorodisilane are required. As a method similar to the present invention, Ishikawa et al.
J. ○r scale nometal, Chem, 2363 (19
70)) The method shown by the following formula is known, but (
The actual situation is that the tetramethylsilane produced in the above formula must be taken out of the reaction system, resulting in a low yield.
本発明はかかる欠点を除去し、モノシラン類とジシラン
類とを反応させて工業的に有用なべンタメチルジクロロ
ジシランおよびテトラメチルジクロロジシランを製造す
る新しい方法を提供するものである。The present invention eliminates these drawbacks and provides a new method for producing industrially useful pentamethyldichlorodisilane and tetramethyldichlorodisilane by reacting monosilanes and disilanes.
さらに詳しくは一般式(CH3)mSiC14‐mで表
わされるモノシラン類と、一般式(CH3)nSi2C
I6‐nで表わされるジシラン類とを塩化アルミニウム
の存在下10000から400qoの温度で反応させる
ことを特徴とする、一般式(CH3)pSi2CI6‐
pで表わされるジシラン類の製造方法に関するものであ
る。More specifically, monosilanes represented by the general formula (CH3)mSiC14-m and general formula (CH3)nSi2C
A compound of the general formula (CH3) pSi2CI6-, which is characterized by reacting a disilane represented by I6-n at a temperature of 10,000 to 400 qo in the presence of aluminum chloride.
The present invention relates to a method for producing disilanes represented by p.
(上記各式中、nが6の場合mは1および2から選ばれ
る数であり、nが1,2および3から選ばれる数の場合
はmは3および4から選ばるた数である。またpは4お
よび5から選ばれる数である。)すなわち本発明は適当
なモノシラン類を用いてジシラン類と再平衡化させるこ
とによりジシラン類の塩素化およびメチル化を行うこと
から成るものであり、ヘキサメチルジシランのような塩
素原子をもたないジシラン類においてはジメチルジクロ
ロシランやメチルトリクロロシランのような塩素原子を
多く有するモノシラン類によりジシラン類を塩素化する
ものであり、高沸点残澄中のジシラン留分のような塩素
原子を多く有するジシラン類においてはトリメチルクロ
ロシランのような塩素原子の少ないモノシラン類により
ジシラン類をメチル化することからなる。(In each of the above formulas, when n is 6, m is a number selected from 1 and 2; when n is a number selected from 1, 2, and 3, m is a number selected from 3 and 4. In addition, p is a number selected from 4 and 5.) That is, the present invention consists of chlorinating and methylating disilanes by re-equilibrating them with appropriate monosilanes. For disilanes that do not have chlorine atoms such as hexamethyldisilane, disilanes are chlorinated with monosilanes that have many chlorine atoms such as dimethyldichlorosilane and methyltrichlorosilane. In the case of disilanes having a large number of chlorine atoms, such as the disilane fraction, the disilane is methylated with a monosilane having few chlorine atoms, such as trimethylchlorosilane.
本発明で用いられる一般式(CH3)mSiC14…で
表わされるモノシラン類は単一なモノシラン類ないし混
合物で良く、この種のモノシラン類は直接法により容易
に得られるものである。The monosilanes represented by the general formula (CH3)mSiC14 used in the present invention may be a single monosilane or a mixture, and this type of monosilanes can be easily obtained by a direct method.
本発明で用いられる一般式(CH3)nSi2CI6[
で表わされるジシラン類は直接法によって得られる高沸
点残澄中のジシラン留分として混合物の形で得られたも
の、それらより精蟹によって得られたもの、またはこれ
をグリニャール法でメチル化したものが用いられる。General formula (CH3)nSi2CI6[
The disilanes represented by are those obtained in the form of a mixture as a disilane fraction in the high-boiling point residue obtained by the direct method, those obtained from them by using crabs, or those obtained by methylating this by the Grignard method. is used.
なお、これらの混合ジシラン類には、本発明の範囲以外
のジシラン類が混在していてもかまわない。Note that these mixed disilanes may contain disilanes other than those within the scope of the present invention.
これらモノシラン類とジシラン類の配合量は、種々の条
件によりかなり幅広い範囲から選択されるが、通常は目
的とするジシラン類を多量に得ることを目的とするため
、平衡状態から考えて、モノシラン類をジシラン類に対
して1ないし5倍モル用いるのが良い。The blending amounts of these monosilanes and disilanes are selected from a fairly wide range depending on various conditions, but usually the aim is to obtain a large amount of the desired disilanes, so considering the equilibrium state, monosilanes It is preferable to use 1 to 5 times the mole of disilanes.
本発明で用いれる塩化アルミニウムは触媒量的な量で用
いられるが、通常は、ジシラン類に対して0.5モルか
ら50モル%の量が適当であり、これより多いと経済的
に不利であるばかりか、目的とするジシラン類からの塩
化アルミニウムの分離が困難となる。Aluminum chloride used in the present invention is used in a catalytic amount, but normally an amount of 0.5 to 50 mol % based on the disilanes is appropriate, and larger amounts are economically disadvantageous. Not only that, but it also becomes difficult to separate aluminum chloride from the desired disilanes.
またこれより少ないと反応を充分に進行させるのに長い
時間を必要とし経済的に不利益となる。反応は通常10
0午○から400℃の範囲で選択され、数十分から数十
時間の間に反応を完結する。On the other hand, if the amount is less than this, a long time is required for the reaction to proceed sufficiently, which is economically disadvantageous. The reaction is usually 10
The temperature is selected in the range of 0:00 to 400°C, and the reaction is completed within several tens of minutes to several tens of hours.
反応温度が10000以下では反応が進行せず、400
oo以上では副反応として、Si−C結合やC一日結合
の切断が起こり、炭化水素類の副生が著しい。また反応
装置としては、密閉された反応装置が用いられるが、反
応物を充分に混ぜることが可能な適当な麓洋装層を持っ
た反応装置が好ましい。本発明によって得られるジシラ
ン類、すなわち(CH3)3SjSiC1(CH3)2
および(CH3)2CISiSiC1(CH3)2は式
{11に示したケィーケィ素結合の鱗裂反応を利用する
ことにより工業的に有用なモノシラン類を製造するのに
利用される。If the reaction temperature is below 10,000, the reaction will not proceed;
When the temperature is higher than 0, the Si--C bond and the C-bond are broken as a side reaction, and the by-product of hydrocarbons is significant. Although a closed reactor is used as the reactor, a reactor having an appropriate layer that allows sufficient mixing of the reactants is preferred. Disilanes obtained according to the present invention, namely (CH3)3SjSiC1(CH3)2
and (CH3)2CISiSiC1(CH3)2 are used to produce industrially useful monosilanes by utilizing the scale splitting reaction of the silicon bond shown in formula {11.
また芳香族ジハロゲ化物と反応させることにより(式中
、Xは塩素原子およびメチル基から選ばれた基であり、
Yは塩素原子および臭素原子から選ばれたハロゲン原子
である。Alternatively, by reacting with an aromatic dihalide (wherein X is a group selected from a chlorine atom and a methyl group,
Y is a halogen atom selected from chlorine and bromine atoms.
)重合可能な耐熱性にすぐれたケイ素化合物を製造する
のに利用される。) Used to produce polymerizable silicon compounds with excellent heat resistance.
以下の実施例で本発明をさらに詳しく説明する。実施例
1
(CH3)2SIC12194夕(1.5モル)、(C
凡)ダiSi(CH3)373夕(0.5モル)、塩化
アルミニウム13夕(20モル%)を密封反応容器に入
れ、窒素置換後16000に加熱した。The invention will be explained in more detail in the following examples. Example 1 (CH3)2SIC12194 (1.5 mol), (C
373 moles (0.5 mol) of di-Si(CH3) and 13 moles (20 mol %) of aluminum chloride were placed in a sealed reaction vessel, and heated to 16,000 ℃ after purging with nitrogen.
30分間加熱したところ(CH3)3SiSi(CH3
)3はまったくなくなり、(CH3)3SiSiCI(
CH3)28.3夕(0.05モル)、(CH3)2C
ISiSjC1(CH3)277.6夕(0.41モル
)を得た。When heated for 30 minutes, (CH3)3SiSi(CH3
)3 completely disappears, and (CH3)3SiSiCI(
CH3)28.3m (0.05 mol), (CH3)2C
277.6 moles (0.41 mol) of ISiSjC1(CH3) were obtained.
その他の生成物として((CH3)2CISiSiC1
2(CH3)が8.3夕(0.04モル)得られた。実
施例 2CH3SIC13215夕(1,5モル)、(
CH3)3SiSi(CH3)373夕(0.5モル)
および塩化アルミニウム13夕(20モル%)を密封反
応容器に入れ、窒素置換後160℃で4時間加熱したそ
ころ、(CH3)3SiSiC1(CH3)2のみが?
6.6夕(0.46モル)得られた。Other products include ((CH3)2CISiSiC1
2(CH3) was obtained over 8.3 days (0.04 mol). Example 2CH3SIC13215 (1.5 mol), (
CH3)3SiSi(CH3)373(0.5 mol)
and aluminum chloride (20 mol%) were placed in a sealed reaction vessel and heated at 160°C for 4 hours after purging with nitrogen. Only (CH3)3SiSiC1(CH3)2 was present?
6.6 hours (0.46 mol) was obtained.
実施例 3
(CH3)4Si100夕(1.14モル)、(CH3
)CI2SiSiC12(CH3)114夕(0.5モ
ル)、塩化アルミニウム5夕(7.5モル%)を密封反
応容器に入れ、窒素置換後14000で2独特間加熱し
たところ(CH3)3SiSiC1(CH3)213夕
(0.08モル)および(CH3)2CISiSjC1
(CH3)253夕(0.28モル)を得た。Example 3 (CH3)4Si100 (1.14 mol), (CH3
) CI2SiSiC12 (CH3) 114 (0.5 mol) and aluminum chloride 5 (7.5 mol %) were placed in a sealed reaction vessel and heated at 14,000 ℃ for 2 hours after purging with nitrogen (CH3) 3SiSiC1 (CH3) 213 (0.08 mol) and (CH3)2CISiSjC1
(CH3) 253 mol (0.28 mol) was obtained.
他の生成物として(CH3)2CISiSiC12(C
H3)が少量得られたが、(CH3)3SiSi(CH
3)3は全く得られなかった。実施例 4
(CH3)3SICI1632(1.5モル)、(CH
3)CI2SiSiC1(CH3)2104夕(0.5
モル)、塩化アルミニウム5夕(7.5モル%)を密封
反応容器に入れ窒素置換後1600024時間反応させ
たところ、(C比)3SiSiC1(CH3)221夕
(0.13モル)および(CH3)2CISiSiC1
(CH3)2479(0.25モル)を得た。Other products include (CH3)2CISiSiC12(C
H3) was obtained in small amounts, but (CH3)3SiSi(CH
3) 3 was not obtained at all. Example 4 (CH3)3SICI1632 (1.5 mol), (CH
3) CI2SiSiC1 (CH3) 2104 evening (0.5
When aluminum chloride (7.5 mol%) was placed in a sealed reaction vessel and reacted for 1,600,024 hours after purging with nitrogen, (C ratio) 3SiSiCl (CH3) (0.13 mol) and (CH3) were obtained. 2CISiSiC1
(CH3)2479 (0.25 mol) was obtained.
実施例 5
(C比)3SICI130(1.2モル)、(CH3)
CI2SiSiC12(CH3)689(0.3モル)
、塩化アルミニウム1.0夕(2.5モル%)を密封反
応容器に入れ、窒素置換物25000で1■時間反応さ
せたところ、(CH3)3SjSjC1(CH3)21
0夕(0.06モル)および(CH3)2CISjSj
C1(CH3)226夕(0.14モル)を得た。Example 5 (C ratio) 3SICI130 (1.2 mol), (CH3)
CI2SiSiC12(CH3)689 (0.3 mol)
, aluminum chloride (2.5 mol%) was placed in a sealed reaction vessel and reacted for 1 hour with 25,000 nitrogen chloride, (CH3)3SjSjC1 (CH3)21
0 (0.06 mol) and (CH3)2CISjSj
C1(CH3)226 (0.14 mol) was obtained.
また実施例3と同様に他の生成物として(CH3)2C
ISiSiC12(CH3)が少量得られたが(CH3
)3SjSj(CH3)3は全く得られなかった。実施
例 6
(CH3)3SIC1200夕(1.85モル)、一般
式(CH3)2.5Si2CI3.5で表わされる直接
法における高沸点残澄中のジシラン蟹分(沸点150〜
16000)100夕および塩化アルミニウム20夕(
0.15モル)を密封反応容器に入れ、窒素置換後16
0℃で24時間加熱した。Similarly to Example 3, other products (CH3)2C
Although a small amount of ISiSiC12(CH3) was obtained (CH3
)3SjSj(CH3)3 was not obtained at all. Example 6 (CH3)3SIC1200 (1.85 mol), disilane fraction in the high boiling point residue in the direct method represented by the general formula (CH3)2.5Si2CI3.5 (boiling point 150~
16000) 100 nights and aluminum chloride 20 nights (
0.15 mol) was placed in a sealed reaction vessel, and after purging with nitrogen, 16
Heated at 0°C for 24 hours.
得られた反応混合物から(CH3)3SiSjC1(C
H3)217夕(0.10モル)および(CH3)2C
ISiSiC1(CH3)256夕(0.30モル)を
得た。(CH3)3SiSjC1(C
H3)217(0.10 mol) and (CH3)2C
256 (0.30 mol) of ISiSiC1(CH3) was obtained.
Claims (1)
わされるモノシラン類と、一般式(CH_3)_nSi
_2Cl_6_−_nで表わされるジシラン類とを塩化
アルミニウムの存在下100℃から400℃の温度で反
応させることを特徴とする、一般式(CH_3)_pS
i_2Cl_6_−_pで表わされるジシラン類の製造
方法。 (上記各式中、nが6の場合mは1および2から選ば
れる数であり、nが1,2および3から選ばれる数の場
合にはmは3および4から選ばれた数である。 またpは4および5から選ばれた数である。)2 モノ
シラン類として(CH_3)_2SiCl_2と、ジシ
ラン類類として(CH_3)_3SiSi(CH_3)
_3とを反応させて(CH_3)_2ClSiSiCl
(CH_3)_2を得る特許請求の範囲第1項記載の方
法。 3 モノシラン類として(CH_3)SiCl_3と、
ジシラン類として(CH_3)_3SiSi(CH_3
)_3とを反応させて(CH_3)_3SiSi(CH
_3)_2Clを得る特許請求の範囲第1項記載の方法
。 4 モノシラン類として(CH_3)_4Siと、ジシ
ラン類として(CH_3)Cl_2SiSiCl_2(
CH_3)とを反応させて(CH_3)_3SiSiC
l(CH_3)_2および(CH_3)_2ClSiS
iCl(CH_3)_2を得る特許請求の範囲第1項記
載の方法。 5 モノシラン類として(CH_3)_3SiClと、
ジシラン類として(CH_3)Cl_2SiSiCl_
2(CH_3)とを反応させて(CH_3)_3SiS
iCl(CH_3)_2および(CH_3)_2ClS
iSiCl(CH_3)_2を得る特許請求の範囲第1
項記載の方法。 6 モノシラン類として(CH_3)_3SiClと、
ジシラン類として(CH_3)Cl_2SiSiCl(
CH_3)_2とを反応させて(CH_3)_3SiS
iCl(CH_3)_2および(CH_3)_2ClS
iSiCl(CH_3)_2を得る特許請求の範囲第1
項記載の方法。 7 モノシラン類として(CH_3)_3SiClと、
ジシラン類としてメチルシラン類の蒸留残渣中ののジシ
ラン留分とを反応させて(CH_3)_3SiSiCl
(CH_3)_2および(CH_3)_2ClSiSi
Cl(CH_3)_2を得る特許請求の範囲第1項記載
の方法。[Claims] 1 Monosilanes represented by the general formula (CH_3)_mSiCl_4_-_m and the general formula (CH_3)_nSi
General formula (CH_3)_pS, characterized by reacting disilanes represented by _2Cl_6_-_n at a temperature of 100°C to 400°C in the presence of aluminum chloride.
A method for producing a disilane represented by i_2Cl_6_-_p. (In each of the above formulas, when n is 6, m is a number selected from 1 and 2; when n is a number selected from 1, 2, and 3, m is a number selected from 3 and 4. Also, p is a number selected from 4 and 5.)2 Monosilanes (CH_3)_2SiCl_2 and disilanes (CH_3)_3SiSi(CH_3)
_3 to react with (CH_3)_2ClSiSiCl
A method according to claim 1 for obtaining (CH_3)_2. 3 As monosilanes (CH_3)SiCl_3,
As disilanes (CH_3)_3SiSi(CH_3
)_3 to form (CH_3)_3SiSi(CH
_3) The method according to claim 1 for obtaining _2Cl. 4 Monosilanes (CH_3)_4Si and disilanes (CH_3)Cl_2SiSiCl_2(
CH_3) to react with (CH_3)_3SiSiC
l(CH_3)_2 and (CH_3)_2ClSiS
A method according to claim 1 for obtaining iCl(CH_3)_2. 5 As monosilanes (CH_3)_3SiCl,
As disilanes (CH_3)Cl_2SiSiCl_
2(CH_3) to form (CH_3)_3SiS
iCl(CH_3)_2 and (CH_3)_2ClS
Claim 1 for obtaining iSiCl(CH_3)_2
The method described in section. 6 As monosilanes (CH_3)_3SiCl,
As disilanes (CH_3)Cl_2SiSiCl(
By reacting with CH_3)_2, (CH_3)_3SiS
iCl(CH_3)_2 and (CH_3)_2ClS
Claim 1 for obtaining iSiCl(CH_3)_2
The method described in section. 7 As monosilanes (CH_3)_3SiCl,
As a disilane, the disilane fraction in the distillation residue of methylsilane is reacted with (CH_3)_3SiSiCl.
(CH_3)_2 and (CH_3)_2ClSiSi
A method according to claim 1 for obtaining Cl(CH_3)_2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP51066231A JPS6039078B2 (en) | 1976-06-07 | 1976-06-07 | Method for manufacturing disilanes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP51066231A JPS6039078B2 (en) | 1976-06-07 | 1976-06-07 | Method for manufacturing disilanes |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS52151129A JPS52151129A (en) | 1977-12-15 |
| JPS6039078B2 true JPS6039078B2 (en) | 1985-09-04 |
Family
ID=13309859
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51066231A Expired JPS6039078B2 (en) | 1976-06-07 | 1976-06-07 | Method for manufacturing disilanes |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6039078B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4393229A (en) * | 1982-04-28 | 1983-07-12 | General Electric Company | Redistribution of polysilanes in high boiling residues |
| DE102010002577A1 (en) * | 2010-03-04 | 2011-09-08 | Wacker Chemie Ag | Process for the conversion of disilanes |
-
1976
- 1976-06-07 JP JP51066231A patent/JPS6039078B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS52151129A (en) | 1977-12-15 |
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