JPS6041702B2 - metal coating - Google Patents
metal coatingInfo
- Publication number
- JPS6041702B2 JPS6041702B2 JP5498879A JP5498879A JPS6041702B2 JP S6041702 B2 JPS6041702 B2 JP S6041702B2 JP 5498879 A JP5498879 A JP 5498879A JP 5498879 A JP5498879 A JP 5498879A JP S6041702 B2 JPS6041702 B2 JP S6041702B2
- Authority
- JP
- Japan
- Prior art keywords
- metal film
- sputtering
- plated
- metal
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
本発明はマグネトロン型スパッタリングにより、良好な
表面状態と、金属光沢を持たせた金属皮膜に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a metal film that has a good surface condition and a metallic luster by magnetron sputtering.
近年、無公害なメッキ法として、蒸着法、イオンブレー
ティング法、スパッタリング法などの真空メッキ法が盛
んに用いられるようになつてきた。In recent years, vacuum plating methods such as vapor deposition, ion blating, and sputtering have come into widespread use as non-polluting plating methods.
これらの方法は、いずれの場合でもメッキ基板の表面温
度が上昇し、特にプラスチックなど熱損傷を受け易い材
料をメッキ基板とする場合には、基板を劣化させる問題
があつた。このうち、スパッタリング法は不活性ガスの
低真空中でグロー放電を行なつたとき、その放電で陰極
(ターゲット)の金属が陽イオンの衝撃によりたたき出
されてメッキ基板の表面に付着するもので、合金の組成
を変えることなくメッキ皮膜が寿られ、しかも高融点材
料のメッキも可能であるという特色を有している。In any of these methods, the surface temperature of the plated substrate increases, and particularly when the plated substrate is made of a material that is easily damaged by heat, such as plastic, there is a problem in that the substrate deteriorates. Among these methods, sputtering is a method in which glow discharge is performed in a low vacuum of inert gas, and the metal of the cathode (target) is knocked out by the impact of cations and adheres to the surface of the plated substrate. , the plated film can be maintained for a long time without changing the composition of the alloy, and it is also possible to plate high melting point materials.
しかし、この方法はス・ゞツタ速度が遅く、作業圧力が
高い上、前述の如くメッキ基板の表面温度が上昇すると
いつた欠点があるため、限られた分野でしか応用されて
いな6ゝつた。この点を改善するために、ターゲットの
裏面に磁石を配置して放電空間に於ける電界に直交した
磁界をかけるようにしたマグネトロン型のスパッタ装置
が開発された。この装置は放電に伴つて生成された電子
が磁界によつて曲げられてドリフト運動を行なうように
して、陰極(ターゲット)に吋向して配置されたメッキ
基板に電子が流入する ーーのを防止して、メッキ基板
の温度上昇を抑えるようにしたものである。しかもこの
装置は磁力線がターゲット表面近傍で長い連続軌道を持
ぢ、、高い1 ゛密度の電子雲が形成されるため、低い
圧力においても効率良く気体を電離てき、大電力を投入
してもメッキ基板の温度上昇が抑えられるので、蒸着に
近い高速スパッタが可能で、プラスチックなど熱損傷を
受け易いメッキ基板に良好な金属皮膜を形成させること
ができる。However, this method is only applicable in limited fields because of its slow speed, high working pressure, and the above-mentioned drawbacks such as an increase in the surface temperature of the plated substrate. . In order to improve this point, a magnetron type sputtering device was developed in which a magnet is placed on the back surface of the target to apply a magnetic field perpendicular to the electric field in the discharge space. This device prevents the electrons generated during discharge from flowing into the plated substrate, which is placed facing towards the cathode (target), by bending the electrons generated by the discharge and performing a drift motion by the magnetic field. This suppresses the temperature rise of the plated substrate. In addition, this device uses long continuous orbits of magnetic field lines near the target surface, forming an electron cloud with a high density of 1゛, so it can ionize gas efficiently even at low pressures and plating even when high power is applied. Since the temperature rise of the substrate is suppressed, high-speed sputtering similar to vapor deposition is possible, and a good metal film can be formed on plated substrates that are easily damaged by heat, such as plastic.
一方、このマグネトロン型スパッタリングによる方法は
、真空度が高く、良質なメッキ金属皮膜が得られるが、
金属粒子が堆積する過程での粒子相互の衝突などによつ
てメッキされた金属皮膜自体に大きな歪を内蔵する傾向
があり、しかもメッキ基板との相互作用も大きく、密着
性に優れている。On the other hand, this method using magnetron type sputtering has a high degree of vacuum and can obtain a high-quality plated metal film, but
The plated metal film itself tends to have large distortions due to collisions between particles during the deposition process, and the interaction with the plated substrate is also large, resulting in excellent adhesion.
この傾向は、メッキ基板がスパッタ材料とほぼ同程度の
熱膨張率を有する場合には問題はないが、熱膨張率に大
きな差がある場合に特に問題となる。例えばプラスチッ
クがガラスをメッキ基板とし、これに金属メッキする場
合、錫やアルミニウムなど柔らかな金属は基板材料の熱
的変形に追従つて動くためメッキされた金属皮膜の外観
は良好であるが、クロムやステンレスなどのように比較
的固くて脆い金属の場合には、第1図に示すように金属
皮膜にクラックやしわを生じて外観を著しく劣化される
。これはメッキ基板の熱的変形にメッキされた金属皮膜
が迫従できず、内蔵された歪が、微細な網状のヒビ割れ
を生じて開放されるためである。特に近年、アルミニウ
ムのメッキに代り、クロムやステンレスなど重厚な外観
を与える金属メッキをプラスチックの表面に行なうこと
が種種の分野で望まれるようになつて来たことから、こ
のヒビ割れ現象は大きな問題となつていた。This tendency does not pose a problem when the plated substrate has a coefficient of thermal expansion that is approximately the same as that of the sputtered material, but it becomes a problem especially when there is a large difference in the coefficient of thermal expansion. For example, when plastic uses glass as a plating substrate and then metal-plats it, the appearance of the plated metal film is good because soft metals such as tin and aluminum move with the thermal deformation of the substrate material, but chromium and In the case of relatively hard and brittle metals such as stainless steel, cracks and wrinkles occur in the metal coating, significantly deteriorating the appearance, as shown in FIG. This is because the plated metal film cannot follow the thermal deformation of the plated substrate, and the built-in distortion is released by creating fine net-like cracks. In particular, in recent years, it has become desirable in various fields to plate the surfaces of plastics with metal plating, such as chrome or stainless steel, which gives a solid appearance instead of aluminum plating, and this cracking phenomenon has become a big problem. It was becoming.
本発明は、かかる点に鑑み、プラスチックなどのメッキ
基板と、熱膨張率が大きく異なる金属をマグネトロン型
スパッタリングによりメッキして、外観に優れ、しかも
金属光沢に優れた金属皮膜を得ることを目的とするもの
である。In view of this, the present invention aims to obtain a metal coating with excellent appearance and metallic luster by plating a plated substrate such as plastic with a metal having a significantly different coefficient of thermal expansion using magnetron sputtering. It is something to do.
即ち、本発明はマグネトロン型スパッタリングによりメ
ッキ基板に形成した金属皮膜において、その金属皮膜中
に150〜500ppmの炭素を含有したことを特徴と
するものである。That is, the present invention is characterized in that the metal film formed on a plated substrate by magnetron sputtering contains 150 to 500 ppm of carbon.
以下、本発明の詳細な説明する。The present invention will be explained in detail below.
本発明における金属皮膜の製造方法は陰極となるターゲ
ットの。裏面に磁石を配置して、ターゲットの表面近傍
に磁場を形成させながらスパッタリングするマグネトロ
ン型スパッタリングにより行なう。この場合、装置内は
炭化水素ガスを含むアルゴンガス雰囲気の低真空に保持
して、陰極となるターゲットと陽極の間に電圧を印加し
てグロー放電を生じさせ、このときの陽イオンの衝撃に
より、スパッタ材料で形成したターゲットの金属をたた
き出して、前記ターゲットと対向して配置したプラスチ
ックやガラスなどのメッキ基板に付着させ、金属皮膜を
形成させるものである。前記不活性ガスとしては、例え
ばアルゴンガスなどを用い、またこの不活性ガス中に混
合した炭化水素ガスとしては、例えはアセチレン、メタ
ン、エタン、ブタンなど何れのものでも良い。The method for producing a metal film in the present invention uses a target that becomes a cathode. Magnetron sputtering is performed by placing a magnet on the back surface of the target and sputtering while creating a magnetic field near the surface of the target. In this case, the inside of the device is kept in a low vacuum with an argon gas atmosphere containing hydrocarbon gas, and a voltage is applied between the target, which serves as the cathode, and the anode, to generate a glow discharge, and the bombardment of cations at this time causes a glow discharge. In this method, the metal of a target made of a sputtering material is knocked out and deposited on a plated substrate such as plastic or glass placed opposite the target to form a metal film. As the inert gas, for example, argon gas or the like is used, and as the hydrocarbon gas mixed in the inert gas, any one of acetylene, methane, ethane, butane, etc. may be used.
この場合、炭化水素ガスの分圧に対する金属皮膜のワレ
性、即ちクラックの発生状況と金属光沢(鏡面反射率)
との関係を調べた結果を第2図のノグラフに示す。なお
この場合、メッキ基板としてはABS樹脂を用い、また
メッキする金属としてはクロムを用いた。この結果から
、アセチレン分圧が4X
10−4T0rr以上では金属皮膜が黄色から灰色に着
・色し、鏡面反射率が低下する。In this case, the cracking property of the metal film due to the partial pressure of hydrocarbon gas, that is, the occurrence of cracks and the metallic luster (specular reflectance)
The results of investigating the relationship between the two are shown in the graph of Figure 2. In this case, ABS resin was used as the plated substrate, and chromium was used as the metal to be plated. From this result, when the acetylene partial pressure is 4X 10-4T0rr or more, the metal film changes color from yellow to gray, and the specular reflectance decreases.
またアセチレン分圧が3×10−4T0rr以下では鏡
面反射率が向上し、金属光沢が増してくる。一方、アセ
チレン分圧が8×10−5T0rr未満になると金属皮
膜にクラックを生じ、これに伴なう拡散反射成分が増加
゛し、鏡面反射率が低下してくる。従つてアセチレン分
圧を8×10−5〜3X10−4T0rrの範囲に限定
することにより、クラックがなく外観に優れしかも金属
光沢を有する金属皮膜が得られる。Moreover, when the acetylene partial pressure is 3×10 −4 T0rr or less, the specular reflectance improves and the metallic luster increases. On the other hand, when the acetylene partial pressure is less than 8 x 10-5 T0rr, cracks occur in the metal film, the diffuse reflection component increases accordingly, and the specular reflectance decreases. Therefore, by limiting the acetylene partial pressure to a range of 8 x 10-5 to 3 x 10-4 T0rr, a metal film with no cracks, excellent appearance and metallic luster can be obtained.
このように形成された金属皮膜中に含まれる炭素の含有
量を分析したところ、アセチレン分圧の変化に伴つて炭
素の含有量が変化しており、前記アセチレン分圧の範囲
に対応する金属皮膜中の炭素含有量は150〜500p
pmの範囲となる。従つて本発明による、炭素を150
〜500ppm含む金属皮膜は、炭素との反応生成物を
含んて膜質が変化し、金属単独の皮膜に比べてメッキ基
板との密着性が弱まり、熱膨張率差による歪みが十分に
伝わらず、歪応力が増大しないのでクロムやステンレス
など固くて脆い金属の場合にもクラックやしわなどのヒ
ビ割れの発生を防止することができる。Analysis of the carbon content in the metal film formed in this way revealed that the carbon content changed as the acetylene partial pressure changed, and the metal film corresponded to the range of acetylene partial pressure. The carbon content inside is 150-500p
The range is pm. Therefore, according to the invention, carbon 150
Metal coatings containing ~500 ppm change in film quality due to reaction products with carbon, have weaker adhesion to plated substrates than films made of metal alone, and strain due to differences in thermal expansion coefficients cannot be sufficiently transmitted, resulting in distortion. Since stress does not increase, it is possible to prevent cracks and wrinkles from occurring even in the case of hard and brittle metals such as chrome and stainless steel.
また本発明の金属皮膜中に含まれる炭素の量を上記範囲
に限定することにより、優れた金属光沢をも併せ持ち、
重量感のある金属皮膜を得ることができる。更に本発明
はマグネトロン型スパッタリングにより形成されるため
、低温高速のスパッタが可能であり、特に熱損傷を受け
やすいプラスチックをメッキ基板とする場合に効果的で
ある。以下本発明の実施例について説明する。In addition, by limiting the amount of carbon contained in the metal coating of the present invention to the above range, it also has excellent metallic luster,
A metal film with a heavy feel can be obtained. Furthermore, since the present invention is formed by magnetron sputtering, low-temperature, high-speed sputtering is possible, which is particularly effective when the plated substrate is made of plastic, which is susceptible to thermal damage. Examples of the present invention will be described below.
実施例1
ターゲットをスパッタ材料となるクロムで構成し、この
ターゲットの裏面に磁石を設けて、前記ターゲットの表
面にこれと平行な磁界を形成した。Example 1 A target was made of chromium as a sputtering material, and a magnet was provided on the back surface of the target to form a magnetic field parallel to the magnet on the surface of the target.
また装置内のアセチレン分圧を1×10−4T0rrと
し、これにアルゴンガスを導入してスパッタ圧力を5×
10−4T0rr′とした。In addition, the acetylene partial pressure inside the device was set to 1 x 10-4T0rr, and argon gas was introduced into this to increase the sputtering pressure to 5 x
10-4T0rr'.
この状態で直流電圧450V1電流100Aでマグネト
ロンスパッタリングを行なつたところ、メッキ基板とし
たABS樹脂の表面に割れのない金属光沢に優れたクロ
ムメッキ皮膜が形成された。このクロムメッキ皮膜中の
炭素含有量を分析したところ180ppmであつた。実
施例2
上記実施例において、アセチレン分圧を2×10−4T
0rrとし、これにアルゴンガスを導入して、上記と同
様にマグネトロンスパッタリングを行ない、ABS樹脂
の表面にクロムメッキ皮膜を形成した。When magnetron sputtering was performed in this state at a DC voltage of 450 V and a current of 100 A, a crack-free chrome plating film with excellent metallic luster was formed on the surface of the ABS resin used as the plating substrate. The carbon content in this chromium plating film was analyzed and found to be 180 ppm. Example 2 In the above example, the acetylene partial pressure was set to 2 x 10-4T.
0rr, argon gas was introduced thereto, and magnetron sputtering was performed in the same manner as above to form a chrome plating film on the surface of the ABS resin.
このメッキ皮膜は割れのない金属光沢に優れたもので、
またこのメッキ皮膜中の炭素含有量は230ppmであ
つた。This plating film has excellent metallic luster without cracking.
Further, the carbon content in this plating film was 230 ppm.
比較例1
上記実施例1において、装置内をアセチレン単独の雰囲
気とし、その圧力を5×10−4T0rrとした。Comparative Example 1 In Example 1 above, the inside of the apparatus was made into an atmosphere containing only acetylene, and the pressure was set to 5×10 −4 T0rr.
また直流電圧440V、電流100Aとしてマグネトロ
ン型のスパッタリングを行なつた。この結果、ABS樹
脂の表面に形成されたクロムメッキ皮膜は黄灰色に着色
し鏡面反射率が低下していた。比較例2
上記比較例1において、装置内のアセチレン分圧を2×
10−5T0rrとし、これにアルゴンガスを導入して
スパッタ圧力を5X10−4とした。Further, magnetron sputtering was performed at a DC voltage of 440 V and a current of 100 A. As a result, the chrome plating film formed on the surface of the ABS resin was colored yellowish gray and the specular reflectance was reduced. Comparative Example 2 In Comparative Example 1 above, the acetylene partial pressure in the device was changed to 2×
The sputtering pressure was set at 10-5T0rr, and argon gas was introduced into it to set the sputtering pressure to 5X10-4.
また直流電圧450V1電流100Aとして、ABS樹
脂の表面にスパッタリングを行なつた。この結果、形成
されたクロムメッキ皮膜には第1図に示すように微細な
網状のクラックが発生しており、またこのメッキ皮膜中
の炭素含有量は110ppmであつた。Further, sputtering was performed on the surface of the ABS resin at a DC voltage of 450 V and a current of 100 A. As a result, the formed chrome plating film had minute network cracks as shown in FIG. 1, and the carbon content in this plating film was 110 ppm.
比較例3上記比較例2において、アセチレン分圧を4×
10−4T0rr1スパッタ圧力を5×10−4T0r
rとし、また直流電圧450V1電流100AでABS
樹脂の表面にスパッタリングを行なつた。Comparative Example 3 In Comparative Example 2 above, the acetylene partial pressure was changed to 4×
10-4T0rr1 sputtering pressure 5×10-4T0r
r, and ABS at DC voltage 450V and current 100A.
Sputtering was performed on the surface of the resin.
このように形成されたクロムメッキ皮膜は黄色を呈し、
その鏡面反射率は低く、また炭素含有量は560ppm
であつた。The chrome plating film formed in this way has a yellow color,
Its specular reflectance is low and the carbon content is 560ppm
It was hot.
以上説明した如く、本発明に係る金属皮膜によれば、メ
ッキ皮膜中に炭素との反応生成物を含み、且つその炭素
含有量を所定の範囲に規定することにより、プラスチッ
クなどメッキ基板と熱膨張率が大きく異なる場合でも、
割れがなく外観に優れ、しかも優れた金属光沢を有する
など、顕著な効果を有するものである。As explained above, according to the metal film of the present invention, by including a reaction product with carbon in the plating film and regulating the carbon content within a predetermined range, the metal film can thermally expand with the plated substrate such as plastic. Even if the rates vary widely,
It has remarkable effects such as no cracking, excellent appearance, and excellent metallic luster.
第1図はクロムメッキ金属皮膜に発生した網状のヒビ割
れを拡大して(拡大倍率50@)示す模式図、第2図は
アセチレン分圧の変化に対する、金属皮膜のワレ性イと
鏡面反射率口との変化を示すグラフである。Figure 1 is an enlarged schematic diagram (magnification: 50@) of network cracks that occur in a chrome-plated metal film. Figure 2 shows the cracking properties and specular reflectance of the metal film as a result of changes in acetylene partial pressure. It is a graph showing changes with the mouth.
Claims (1)
形成した金属皮膜において、その金属皮膜中に150〜
500ppmの炭素を含有したことを特徴とする金属皮
膜。 2 金属皮膜をクロムで形成したことを特徴とする特許
請求の範囲第1項記載の金属皮膜。[Claims] 1. In a metal film formed on a plated substrate by magnetron sputtering, the metal film contains 150 to
A metal film characterized by containing 500 ppm of carbon. 2. The metal coating according to claim 1, wherein the metal coating is made of chromium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5498879A JPS6041702B2 (en) | 1979-05-04 | 1979-05-04 | metal coating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5498879A JPS6041702B2 (en) | 1979-05-04 | 1979-05-04 | metal coating |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55148767A JPS55148767A (en) | 1980-11-19 |
| JPS6041702B2 true JPS6041702B2 (en) | 1985-09-18 |
Family
ID=12986020
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5498879A Expired JPS6041702B2 (en) | 1979-05-04 | 1979-05-04 | metal coating |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6041702B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2512070A1 (en) * | 1981-09-03 | 1983-03-04 | Commissariat Energie Atomique | HIGH HARD CHROMIUM LAYER, RESISTANT TO BOTH WEAR, DEFORMATION, FATIGUE SURFACES AND CORROSION |
-
1979
- 1979-05-04 JP JP5498879A patent/JPS6041702B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55148767A (en) | 1980-11-19 |
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