JPS6043017B2 - semiconductor equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to semiconductor devices, and particularly aims to improve the durability of high-power rectifying elements, transistors, and the like.

In general, excessive current may flow in semiconductor devices such as high-power rectifying elements and high-power transistors due to various causes.

The above example is a case where the reverse breakdown voltage has deteriorated, and the excess current flows in a concentrated manner at one location of the rectifying element. mosquito)
A phase or the like is provided in a part of the circuit to prevent excessive current, but even if the phase operates, due to its characteristics, it may allow instantaneous excessive current to flow. Next, a description will be given with reference to FIG. 1 showing a semiconductor rectifying element. In the figure, 1 is a cylindrical body made of ceramics, 2, 2 are a pair of annular lids made of Kovar (trade name), which are sealed opposite to both end surfaces of the cylindrical body, and 3, 3 are coaxial with the cylindrical body and A pair of electrode bodies are inserted into the openings of the annular lid body and sealed. The cylinder body, the annular lid body, and the electrode bodies form an airtight envelope, and inside this envelope, there is a space between the opposing surfaces of the electrode bodies. The lower electrode protects the semiconductor element structure 4 that is fixed and sandwiched by the solder layer 5 and the lid from being broken by molten metal that scatters in the form of plasma as the semiconductor element structure melts due to excessive current. A shield 6, 6' is provided for this purpose. This shield is made of silicone rubber, Teflon,
It is made of a synthetic resin plate with excellent heat resistance, such as Daiflon (trade name), and is tightly attached before sealing.
According to the above conventional structure, an excessive current (for example, several 1 OKA
) concentrates, causing the semiconductor element structure to melt and scatter in the form of plasma.

Although the annular lid, which is the weakest part of the envelope structure, is considerably protected by the shields 6 and 6', the insulating cylinder 1 has the drawback of being damaged because it is close to and facing the scattering part. Furthermore, since damage to the envelope accompanies an explosion, other components provided adjacent to the semiconductor device in the circuit wiring may also be damaged. The present invention provides an improved structure of a semiconductor device to overcome the above-mentioned conventional drawbacks.

The present invention relates to a press-contact type semiconductor device, in which a flexible cylindrical insulating heat-resistant material is provided that is surrounded by a semiconductor element structure slidably sandwiched between opposing electrode bodies and sealed between the electrode bodies. The sexual sealing body includes at least one annular protrusion or groove formed on the end surface in contact with the electrode body, and
There is a structural feature in which the surface of the electrode body in contact with this jetty is provided with a groove or a jetty that fits into the jetty or groove.

Next, the present invention will be explained in detail by way of an embodiment with reference to the drawings.

FIG. 2 shows a pressure contact type semiconductor rectifier element in a cross-sectional view. In the figure, 1 is a ceramic cylinder, 2 and 2'' are a pair of annular lids made of Kovar (trade name) sealed opposite to each other on both end surfaces of the cylinder, and 3 and 13 are cylinders. A pair of electrode bodies are coaxially inserted and sealed into the aperture of the annular lid, and the cylinder, the annular lid, and the electrode body form an airtight envelope.
Inside this, a semiconductor element structure ±(force-slidingly) is sandwiched between the opposing surfaces of the electrode body. A part of the cross section in the axial direction is U-shaped, and its inner circumferential surface 16a contacts the circumferential surface of the semiconductor element structure to position it, and the cylindrical end has end surfaces 16b, 16b'' extending inward like a flange. Each of them is adhered and sealed to the corresponding electrode body 3, 3''.Furthermore, this sealing body is opposed to a part of the inner surface of the envelope of the sealed electrode body 13'' through the groove 16c and the jetty 13a. The third
The figure shows a groove 23 in the sealing body and a jetty 26C1 and an electrode body 23''.
A structure in which a is provided is illustrated. Further, FIG. 4 shows a partially cutaway perspective view of the sealing body ±1 shown in FIG. 2. According to the present invention, a semiconductor element structure based on handling during the assembly process of a pressure-contact type semiconductor device in which a semiconductor element structure is orientated only by pressure contact between electrodes, vibration after assembly, and temperature change (history), etc. is not displaced due to the action of the sealing body having soft elasticity, and therefore generation of excessive current, leakage or short circuit between the electrodes, etc. caused by this displacement are prevented.

Therefore, the quality and reliability of the product are improved, and assembly is facilitated, which has the advantage of greatly improving the efficiency and maintenance of the manufacturing process. Next, the assembly part is sealed, and this sealing body is made soft and elastic, and by fitting with the annular jetty, an extremely good adhesion with the electrode body is achieved, and the annular lid body is closed. Since it is sufficiently protected, the withstand capacity of the envelope, such as the annular lid or the ceramic cylinder, is improved even if extremely strong plasma-like scattering occurs. In reality, the arc resistance that occurs at the center of a semiconductor pellet tends to be greater than that at the edges. Furthermore, the electrode body and the semiconductor pellet are brought into electrical and thermal contact by external pressure, and this force closes the gap between the sealing body and the electrode, so it is expected that the durability will be further improved. Furthermore, the present invention has advantages in terms of mass production, such as not requiring any changes in semiconductor device parts, assembly equipment, manufacturing processes, etc., and the sealing body being inexpensive. It goes without saying that the present invention is not limited to the above-mentioned embodiments, but can be widely applied to similar structures such as thyristors and high-power transistors (can-sealed).

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a sectional view of a conventional semiconductor rectifying element, FIG. 2 is a sectional view of a semiconductor rectifying element according to an embodiment of the present invention, and FIG. 3 is a sectional view showing another embodiment. 4 is a partially cutaway perspective view of the sealing body in FIG. 2. FIG.

Note that the same reference numerals in the figures indicate the same or corresponding parts, respectively.

1... Insulating cylindrical body, 2, 2... Annular lid body,
3, 13'', 23''...electrode body, ±1...
Semiconductor element structure, ±U, IU゜゜゜゜゜゜ sealed body, 1
6a, 26a... Inner peripheral surface of sealing body, 16b, 1
6b'', 26b, 26b''... end face of the sealing body,
16c... Annular groove of sealing body, 26c...
- Annular ridge of the sealing body, 13a... Annular ridge of the electrode body, 23a... Annular groove of the electrode body.

Claims (1)

[Claims] 1. An insulating cylinder, a pair of annular lids that are sealed opposite to each other on both end surfaces of the cylinder, and a pair of annular lids that are inserted coaxially with the cylinder into an opening in the annular lid and sealed. A semiconductor element groove structure is slidably held between opposing surfaces of the electrode bodies in an airtight envelope consisting of a pair of electrode bodies forming an annular groove or a jetty, and a soft and elastic insulator. A seal made of a heat-resistant material and having a cylindrical shape and having an inner circumferential surface in contact with the circumferential surface of the semiconductor element structure to orient them, and having a protrusion or groove on the end surface that fits into the annular groove or protrusion of the electrode body. A semiconductor device characterized by comprising a body.