JPS60430B2 - Vapor deposition equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a vapor deposition layer, particularly a direct vapor deposition layer that can form a thin film with a uniform thickness.

In various fields including the semiconductor industry, vacuum deposition methods, sputtering deposition methods,
Gas phase reaction methods are widely practiced.

Sputtering deposition layers are widely used for the purpose of thinning various materials directly during milling.

In this case, in order to reduce the thickness distribution of the deposited film, for example, the geometrical dimensions of the device are increased, the geometrical shape is made spherical, or the substrate is rotated. Even if such measures are applied directly to the sputtering deposition equipment, the variation in the thickness of the deposited film is still 20% even within the same lot.
It exists to some extent. The inventors installed a shield that partially shields the substrate from the evaporation source between the evaporation source and the substrate on which the film is to be formed, and created a film by moving the shield and the substrate relative to each other. It became possible to further reduce the thickness distribution and reduce its variation to 3% or less (Tokukan Sho 53).
110 is spot number 5).

The present invention makes it possible to easily control the temperature of the substrate to be vapor-deposited and easily produce a thin film with less variation in film thickness by configuring the holding member of the shield of this apparatus with an insulating material with good thermal conductivity. It was made so that it could be done.

An embodiment thereof will be described below with reference to the drawings.

FIG. 1A is a sectional view showing the configuration of the electrode section. In the figure, 1 is a spherical target electrode, 2 is a hemispherical shell-shaped substrate stand that also serves as an anode electrode, 3a, 3b, 3c, 3a
', 3b', and 3c' are substrates, and 4 is a shield, and when viewed from the direction of arrow 5 in the figure, it looks like FIG. 1B. A spherical copper target with a diameter of 70 mm was used as the target electrode 1, and a hemispherical shell with an inner diameter of 25 mm was used as the substrate stand 2.Substrates 3a, 3b, 3c, 3a', 3b', 3C
A glass substrate of 25 square meters was used as the shield 4, and a glass substrate processed into the shape shown in FIG. 1B was used as the shield 4. In the apparatus having this configuration, the target electrode 1 and the shielding body 4 are fixed, and sputtering deposition is performed in an argon atmosphere while the substrate stage 2 is rotated around the target electrode 1. Figure 2 shows the results.

FIG. 2A shows the film thickness distribution of the sputtered film obtained when the shielding body 4 was not used for the substrates 3a, 3b, and 3c. The shaded area 6 in the figure is the area where the thickness is 90% or more of the maximum film thickness. Figure B shows the film thickness distribution of the sputtered film when the shielding body 4 is used. The shaded area 7 in the figure shows the area having a film thickness of 90% or more of the maximum film thickness. From the same figure, it can be seen that by using the shielding body 4, the part where the deposited film has a uniform thickness becomes wider. It was discovered that the uniformity or reproducibility of sputtering deposition changes depending on the constituent material of the shield holding member, and that there is a material that is optimal for sputtering deposition with good reproducibility.

FIG. 3 shows the structure of the shield portion.

That is, the shield 4 is fixed to the base 9 of the vacuum chamber by the holding rod 8. In this case, the shielding body 4 is heated during sputtering deposition, and the surface of the substrate is heated by the Korean radiation heat from the shielding body 4.

As a result, the crystallinity of the thin film deposited on the substrate, e.g.
It has been discovered that when an n-pi thin film is deposited on a glass substrate, the c-axis orientation changes, and variations in properties occur even in the same evaporation lot. Therefore, in order to solve this problem, the inventors constructed the holding body 8 of the shielding body 4 from a material with high thermal conductivity, such as gold-plated copper, which reduced the temperature rise of the shielding body 4. , the above-mentioned variations in crystallinity of the deposited film were significantly reduced. A more detailed examination shows that when the retaining material is composed of a thermal conductor,
For example, for Zn thin films, the variation in vinegar tropism is reduced, but depending on the substrate positions 13a, 13b, and 13c,
It was found that the film thickness changed by about 30%. The reason for this is that the potential of the shield 4 is different from the plasma potential at the position of the shield 4, which causes plasma density unevenness in the sputtering space. As a result, the film thickness changes depending on the substrate position as described above. In order to solve this problem, the holder 8 of the shield 4 was made of an electrically insulating and highly thermally conductive material such as beryllium oxide, aluminum oxide, or a diamond powder compact. It became clear that both thickness distributions were improved. The reason is considered to be that since the holder 8 is an electrical insulator, an electric sheath is formed around the shield 4, and the shield 4 does not affect the potential of the plasma.

As is clear from the above description, according to the vapor deposition system according to the present invention, variations in the thickness of the vapor deposited film and its crystallinity can be reduced.

Furthermore, the variation between lots, which normally occurs at about 5% in thickness, is reduced to 1% or less in the apparatus of the present invention, making it useful as an apparatus for mass production. Brief explanation of drawings 1st
Figure A is a sectional view showing the structure of the main part of the embodiment of the Aoi deposition layer according to the present invention, Figure B is a plan view showing the structure of a part thereof, and Figure 2A is formed by the vapor deposition layer before improvement. Figure 3 shows the variation in the thickness of the deposited film formed using the vapor deposition system of the present invention. It is a figure showing a structure.

1...Target electrode, 2...Substrate stand that also serves as an anode electrode, 3a, 3b, 3c, 3a', 3b', 3
c'... Substrate, 4... Shielding body, 8...
・Holding rod.

Figure 1 Figure 2 Figure 3

Claims (1)

[Claims] 1. A sputtering evaporation source, a substrate disposed facing the sputtering evaporation source, and a holding member having electrical insulation and good thermal conductivity held between the sputtering evaporation source and the substrate. a shield for partially shielding the substrate from the sputtering evaporation source,
A vapor deposition apparatus characterized in that the material of the sputtering evaporation source is vapor-deposited onto the substrate while the substrate and the shield are moved relative to each other. 2. Claim 1, characterized in that the holding member of the shield is made of at least one of beryllium oxide, aluminum oxide, or a diamond powder compact.
The vapor deposition apparatus described in section.