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JPS6046361B2 - alignment device - Google Patents
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JPS6046361B2 - alignment device - Google Patents

alignment device

Info

Publication number
JPS6046361B2
JPS6046361B2 JP18365380A JP18365380A JPS6046361B2 JP S6046361 B2 JPS6046361 B2 JP S6046361B2 JP 18365380 A JP18365380 A JP 18365380A JP 18365380 A JP18365380 A JP 18365380A JP S6046361 B2 JPS6046361 B2 JP S6046361B2
Authority
JP
Japan
Prior art keywords
pattern
light
mask
diffraction gratings
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP18365380A
Other languages
Japanese (ja)
Other versions
JPS57106806A (en
Inventor
明 小野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP18365380A priority Critical patent/JPS6046361B2/en
Publication of JPS57106806A publication Critical patent/JPS57106806A/en
Publication of JPS6046361B2 publication Critical patent/JPS6046361B2/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049Technique, e.g. interferometric

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length Measuring Devices By Optical Means (AREA)

Description

【発明の詳細な説明】 この発明は平行に配設された2つの物体を位置合せする
ための位置合せ装置に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an alignment device for aligning two parallel objects.

たとえば、2つの物体として超LSIX線転写用のマス
クをウェハ上に描かれた78LSIパターンに精密に位
置合せする場合、その前段階として上記マスクとウェハ
との粗位置合せが必要である。
For example, when precisely aligning two objects, a mask for VLSI X-ray transfer, to a 78LSI pattern drawn on a wafer, it is necessary to roughly align the mask and the wafer as a preliminary step.

従来、マスクとウェハとの粗位置合せを行なうには、X
線転写装置の中に顕微鏡を挿入し、マスクとウェハ上の
超LSIパターンを肉視しながらマスクあるいはウェハ
を保持した移動テーブルなどの保持機構を手動で作動さ
せて、これらの相対位置合せを行なつていた。しかしな
がら、このような手段でマスクとウェハとの位置合せを
行なうと、X線転写装置の中へ顕微鏡を挿入しなければ
ならないことや作業者が顕微鏡を肉眼で覗きながらウェ
ハまたはマスクを位置決めしなければならないなどのこ
とにより、その作業に多くの手間が掛かり、作業性が極
めて悪いばかりか、作業者の熟練度合などによつて位置
合せ精度に大きなばらつきが生じるなどの欠点があつた
Conventionally, in order to roughly align the mask and wafer,
A microscope is inserted into the line transfer device, and while observing the VLSI patterns on the mask and wafer, a holding mechanism such as a moving table that holds the mask or wafer is manually operated to align them relative to each other. I was getting used to it. However, when aligning the mask and wafer using this method, the microscope must be inserted into the X-ray transfer device, and the operator must position the wafer or mask while looking through the microscope with the naked eye. Not only does the work require a lot of time and effort, and the workability is extremely poor, but also there are drawbacks such as large variations in alignment accuracy depending on the skill level of the worker.

この発明は上記事情にもとづきなされたもので、その目
的とするところは、2つの物体の相対位置決めを回折格
子を利用して自動的に行なえるようにして、作業性の向
上や精度の均一化が計れるようにした位置合せ装置を提
供することにある。
This invention was made based on the above-mentioned circumstances, and its purpose is to automatically perform relative positioning of two objects using a diffraction grating, thereby improving work efficiency and uniformizing accuracy. An object of the present invention is to provide a positioning device that can measure.

以下、この発明の一実施例を第1図乃至第6図ノを参照
して説明する。
An embodiment of the present invention will be described below with reference to FIGS. 1 to 6.

図中1は保持機構である。この保持機構1は、マスクホ
ルダ2と、このマスクホルダ2の下方に配設されたXY
テーブル3とからなり、このXYテーブル3は駆動源4
によつてXY方向に駆動されるようになつている。上記
;マスクホルダ2には第1の物体としてのマスク5が保
持され、上皮■Yテーブル3の上面には第2の物体とし
のウェハ6が上記マスク5と平行になるよう保持されて
いる。上記マスク5には、その隅部に矩形状の不透明な
枠7およびこの枠7によつて囲まれた透光部8とからな
る第1のパターン9が形成され、上記ウェハ6には第1
のパターン9と対応する隅部に第2のパターン10が形
成されている。この第2のパターン10は、第1乃至第
4の回折格子11〜14を仝体が上記透光部8よりも大
きな面積の正方形状となるように配置しているとともに
各回折格子11〜14は刻線の方向がそれぞれ45度づ
つ異なつている。上記保持機構1の上方には光源装置と
してのレーザ発振器15が配設されている。
1 in the figure is a holding mechanism. This holding mechanism 1 includes a mask holder 2 and an XY
This XY table 3 consists of a drive source 4
It is designed to be driven in the X and Y directions by. Above: A mask 5 as a first object is held in the mask holder 2, and a wafer 6 as a second object is held on the upper surface of the epithelium Y table 3 so as to be parallel to the mask 5. A first pattern 9 consisting of a rectangular opaque frame 7 and a transparent portion 8 surrounded by the frame 7 is formed at the corner of the mask 5, and a first pattern 9 is formed on the wafer 6.
A second pattern 10 is formed at a corner corresponding to the pattern 9. In this second pattern 10, the first to fourth diffraction gratings 11 to 14 are arranged so that the body has a square shape with a larger area than the light-transmitting part 8, and each of the diffraction gratings 11 to 14 The directions of the marked lines differ by 45 degrees. A laser oscillator 15 as a light source device is disposed above the holding mechanism 1.

このレーザ発振器15から出力された可干渉光であるレ
ーザ光Lは、反射鏡16aで反射したのち上記第1のパ
ターン9の透光部8を通過し第2のパターン10の回折
格子11〜14を照射する。すると、第1乃至第4の回
折格子11〜14からは、これら刻線角度に応じた方向
にそれぞれ複数の回折光が生じ、そのうちの+1次の回
折光玖〜L4が第1乃至第4の光センサ16〜19で受
光されるようになつている。これら光センサ16〜19
は信号処理回路20に接続されている。この信号処理回
路20は各光センサ16〜19からの信号、すなわち受
光量を比較し、この比較値にもとづいて上記駆動源4を
駆動するようになつている。つぎに、上記構成の作用に
ついて説明する。マ,スク5とウェハ6とをそれぞれ保
持機構1のマスクホルダ2およびXYテーブル3にこれ
らの第1のパターン9と第2のパターン10とが対応す
るように保持したならば、レーザ発振器15を作動させ
てレーザ光Lを出力する。すると、このレーニザ光Lは
反射鏡16aで反射したのち第1のパターン9の透光部
8を通過して第2のパターン10を照射するので、この
第2のパターン10の各回折格子11〜14から生じる
+1次の回折光L1〜L4が各光センサ16〜19で受
光され、このj受光量が信号処理回路20で比較される
。そして、この比較値にもとづいて駆動源4が作動し、
各光センサ16〜19の受光量が等しくなるようXYテ
ーブル3を駆動する。すなわち、マスク5とウェハ6と
のXY方向のイ位置が一致していれば、第5図に示すよ
うに第1のパターン9の透光部8から第2のパターン1
0の各回折格子11〜14が同じ面積で臨んでいる。
The laser beam L, which is a coherent beam outputted from the laser oscillator 15, is reflected by a reflecting mirror 16a and then passes through the light-transmitting portion 8 of the first pattern 9, and passes through the diffraction gratings 11 to 14 of the second pattern 10. irradiate. Then, a plurality of diffracted lights are generated from the first to fourth diffraction gratings 11 to 14, respectively, in directions corresponding to these score line angles, and among them, the +1st-order diffraction light beams ~ L4 are generated from the first to fourth diffraction gratings 11 to 14. The light is received by optical sensors 16-19. These optical sensors 16 to 19
is connected to the signal processing circuit 20. This signal processing circuit 20 compares the signals from each of the optical sensors 16 to 19, that is, the amount of received light, and drives the drive source 4 based on this comparison value. Next, the operation of the above configuration will be explained. Once the mask 5 and wafer 6 are held on the mask holder 2 and the XY table 3 of the holding mechanism 1, respectively, so that the first pattern 9 and the second pattern 10 correspond to each other, the laser oscillator 15 is activated. Activate it to output laser light L. Then, this laser beam L is reflected by the reflecting mirror 16a, passes through the light transmitting portion 8 of the first pattern 9, and irradiates the second pattern 10, so that each of the diffraction gratings 11- The +1st-order diffracted lights L1 to L4 generated from the photodetector 14 are received by each of the optical sensors 16 to 19, and the amounts of the j received light are compared by the signal processing circuit 20. Then, the drive source 4 operates based on this comparison value,
The XY table 3 is driven so that the amounts of light received by each of the optical sensors 16 to 19 are equal. That is, if the positions of the mask 5 and the wafer 6 in the X and Y directions match, the light-transmitting portion 8 of the first pattern 9 is transferred to the second pattern 1 as shown in FIG.
Each of the diffraction gratings 11 to 14 of 0 faces the same area.

したがつて、各回折格子11〜14から生じる+1次の
回折光L上4の強度が等しくなるから、各光センサ16
〜19による受光量が同じになる。しかしながら、マス
ク5とウェハ6との相対位置がたとえば第6図に示すよ
うに+X方向にずれていると、上記各回折格子のうち第
1、第3の回折格子11,13の方が第2、第4の回折
格子12,14に比べて大きな面積で上記透光部8に対
向している。したがつて、第1、第3の回折格子11,
13から生じる+1次の回折光Ll,フLが第2、第4
の回折格子12,14から生じる+1次の回折光舅,L
4に比べて光量が多いから、各光センサ16〜19によ
つて受光される光量に差が生じ、この光量差に応じた信
号が信号処理回路20に出力されるので、XYテーブル
3が・−X方向に駆動される。そして、各光センサ16
〜19が+1次の回折光L1〜L4を連続的に受光し、
各光センサ16〜19の受光量が等しくなると、XYテ
ーブル3が停止し、第1のパターン9に対する第2のパ
ターン10、すなわちマスク5とウェハ6との位置決め
がなされる。また、仮にY方向にもずれがあれば、X方
向と同様にウェハ6が位置決めされる。なお、この発明
は上記一実施例に限定されず、たとえば第1の物体と第
2の物体とにそれぞれ2つの第1、第2のパターンを1
80度または90度ずらして設ければ、第1の物体と第
2の物体をXY方向だけでなく回転方向においても位置
合せすることができる。
Therefore, since the intensity of the +1st-order diffracted light L upper 4 generated from each diffraction grating 11 to 14 is equal, each optical sensor 16
~19, the amount of light received is the same. However, if the relative positions of the mask 5 and the wafer 6 are shifted in the +X direction as shown in FIG. , which face the light-transmitting portion 8 over a larger area than the fourth diffraction gratings 12 and 14. Therefore, the first and third diffraction gratings 11,
The +1st-order diffracted light Ll and light L generated from 13 are the second and fourth
The +1st-order diffracted light generated from the diffraction gratings 12 and 14, L
4, there is a difference in the amount of light received by each optical sensor 16 to 19, and a signal corresponding to this difference in light amount is output to the signal processing circuit 20. - Driven in the X direction. And each optical sensor 16
~19 continuously receives the +1st-order diffracted lights L1 to L4,
When the amount of light received by each of the optical sensors 16 to 19 becomes equal, the XY table 3 stops, and the second pattern 10, that is, the mask 5 and the wafer 6, are positioned relative to the first pattern 9. Furthermore, if there is a shift in the Y direction, the wafer 6 is positioned in the same way as in the X direction. Note that the present invention is not limited to the above-mentioned embodiment; for example, two first and second patterns may be formed on the first object and the second object, respectively.
By providing the first object and the second object at an angle of 80 degrees or 90 degrees, it is possible to align the first object and the second object not only in the XY directions but also in the rotational direction.

また、第2のパターン10を構成する複数の回折格子1
1〜14は、第7図に示すように刻線のピッチを変える
ようにしてもよい。
Moreover, a plurality of diffraction gratings 1 constituting the second pattern 10
1 to 14, the pitch of the scored lines may be changed as shown in FIG.

さらに、レーザ光Lの強度分布は通常中央が最も強く、
周辺にゆくにしたがつて弱くなるガラス分布をなしてい
るから、レーザ光Lの光軸と第1のパターン9の透光部
8とが一致していなければ各回折格子11〜14を照射
するレーザ光Lの強度が初めから不均一となるので位置
合せに誤差が生じてしまう。
Furthermore, the intensity distribution of the laser beam L is usually strongest at the center;
Since the glass has a distribution that becomes weaker toward the periphery, if the optical axis of the laser beam L does not coincide with the transparent portion 8 of the first pattern 9, each diffraction grating 11 to 14 is irradiated. Since the intensity of the laser beam L is non-uniform from the beginning, an error occurs in alignment.

このような誤差を除くためには、第8図に示すように第
1のパターン9の透光部8に第5乃至第8の回折格子2
1〜24を描いておく。ただし、第5乃至第8の回折格
子21〜24は、第1乃至第4の回折格子11〜14に
比べて刻線の方向あるいは刻線の幅を細くするなどし、
かつ濃度をうすくしてレーザ光Lのほとんどが透過可能
な状態とする。さらに、保持機構1の上方には第9図に
示すように第5乃至第8の回折格子21〜24からの回
折光を受光する第5乃至第8の光センサ25〜28を配
置する。そして、第1乃至第4の光センサ16〜19で
受光される回折光レ〜L4の光量を116,117,1
18,119とし、第5乃至第8の光センサ25〜28
で受光される光量を125,I.2f5,127,12
8とすれば、またはとして(2)式と(3)式とから となるように信号処理回20からの出力によつてXYテ
ーブル3を駆動制御すれば、レーザ光Lの強度分布が不
均一であつても、マスク5とウェハ6とを正確に位置合
せするとができる。
In order to eliminate such errors, as shown in FIG.
Draw numbers 1 to 24. However, in the fifth to eighth diffraction gratings 21 to 24, the direction of the scored lines or the width of the scored lines is narrower than that of the first to fourth diffraction gratings 11 to 14,
In addition, the concentration is made thin so that most of the laser beam L can pass through. Further, above the holding mechanism 1, as shown in FIG. 9, fifth to eighth optical sensors 25 to 28 are arranged to receive the diffracted lights from the fifth to eighth diffraction gratings 21 to 24. Then, the light amount of the diffracted light L4 received by the first to fourth optical sensors 16 to 19 is set to 116, 117, 1
18,119, and the fifth to eighth optical sensors 25 to 28
The amount of light received at 125, I. 2f5, 127, 12
8, or if the XY table 3 is driven and controlled by the output from the signal processing circuit 20 so that the equations (2) and (3) are obtained, the intensity distribution of the laser beam L is non-uniform. Even if the mask 5 and the wafer 6 are the same, the mask 5 and the wafer 6 can be accurately aligned.

また、この発明に係る位置合せは、マスクとウェハとだ
けでなく、他の2つの物体、たとえばIC自動ボンダに
も適用可能であること無論である。
Furthermore, it goes without saying that the alignment according to the present invention can be applied not only to a mask and a wafer but also to other two objects, such as an IC automatic bonder.

以上述べたようにこの発明は、第1の物体と第2の物体
とを保持機構により平行に不持し、第1の物体には透光
部をする第1のパターンを形成するとともに第2の物体
には複数の回折格子からな Aヅナ4 【(n
る第2のパターンを形成し、上記透光部を介して回折格
子に可干渉光を照射し、これら回折格子からの回折光を
それぞれ光センサで受光し、各光センサにる受光量が等
しくなるよう上記保持機構を介して第1の物体または第
2の物体を駆動制御するようにした。
As described above, the present invention holds a first object and a second object in parallel by a holding mechanism, forms a first pattern serving as a light-transmitting part on the first object, and a second object. The object has multiple diffraction gratings.Azuna4 [(n
A second pattern is formed, and coherent light is irradiated onto the diffraction grating through the transparent part, and the diffracted light from these diffraction gratings is received by each optical sensor, so that the amount of light received by each optical sensor is equal. The first object or the second object is controlled to be driven through the holding mechanism so that the holding mechanism holds the first object or the second object.

したがつて、第1の物体と第2の物体との位置合せを自
動で能率よく、しかも正確に行なうことができるという
利点がある。
Therefore, there is an advantage that the alignment between the first object and the second object can be performed automatically, efficiently, and accurately.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図乃至第6図はこの発明の一実施例を示し、第1図
は概略的構成図、第2図は光センサの配置状態を示す平
面図、第3図は第1のパターンの平面図、第4図は第2
のパターンの平面図、第5図と第6図はそれぞれ第1の
物体と第2の物体との相対位置に対する第1のパターン
と第2のパターンとの状態を示す説明図、第7図はこの
発明の他の実施例を示す回折格子の平面図、第8図と第
9図はこの発明のさらに他の実施例を示し、第8図は第
1のパターンの平面図、第9図は光セン)サの配置状態
を示す平面図である。 1・・・保持機構、4・・・駆動源(制御手段)、5・
・・マスク(第1の物体)、6・・・ウェハ(第2の物
体)、8・・・透光部、9・・・第1のパターン、10
・・・第2のパターン、11〜14・・・回折格子、1
5・・タレーザ発振器(光源装置)、16〜19・・・
光センサ、L・・ルーザ光(可干渉光)、レ〜L4・・
・回折光。
1 to 6 show one embodiment of the present invention, FIG. 1 is a schematic configuration diagram, FIG. 2 is a plan view showing the arrangement state of the optical sensor, and FIG. 3 is a plan view of the first pattern. Figure 4 is the second
5 and 6 are explanatory diagrams showing the states of the first pattern and the second pattern with respect to the relative positions of the first object and the second object, respectively, and FIG. 7 is a plan view of the pattern. FIGS. 8 and 9 are plan views of a diffraction grating showing other embodiments of the present invention, FIG. 8 is a plan view of a first pattern, and FIG. 9 is a plan view of a first pattern. FIG. 3 is a plan view showing the arrangement of optical sensors. DESCRIPTION OF SYMBOLS 1... Holding mechanism, 4... Drive source (control means), 5...
...Mask (first object), 6... Wafer (second object), 8... Transparent part, 9... First pattern, 10
...Second pattern, 11-14...Diffraction grating, 1
5...Talaser oscillator (light source device), 16-19...
Optical sensor, L... Loser light (coherent light), L4...
・Diffraction light.

Claims (1)

【特許請求の範囲】 1 第1の物体および第2の物体を平行に保持した保持
機構と、上記第1の物体に設けられた透光部を有する第
1のパターンと、上記第2の物体に設けられた複数の回
折格子からなる第2のパターンと、上記第1のパターン
の透光部を介して第2のパターンの回折格子に可干渉光
を照射する光源装置と、可干渉光によつて照射された各
回折格子から回折光をそれぞれ受光する複数の光センサ
と、各光センサによる回折光の受光量を比較しこの比較
値にもとづいて各光センサの受光量が等しくなるよう保
持機構を作動させて第1の物体または第2の物体を移動
させる制御手段とを具備したことを特徴とする位置合せ
装置。 2 第2のパターンの複数の回折格子は刻線の方向ある
いは刻線のピッチがそれぞれ異なることを特徴とする特
許請求の範囲第1項記載の位置合せ装置。
[Claims] 1. A holding mechanism that holds a first object and a second object in parallel, a first pattern having a light-transmitting portion provided on the first object, and a holding mechanism that holds a first object and a second object in parallel; a second pattern consisting of a plurality of diffraction gratings provided in the first pattern; a light source device that irradiates the diffraction grating of the second pattern with coherent light through the transparent portion of the first pattern; A plurality of optical sensors each receive diffracted light from each irradiated diffraction grating, and the amount of diffracted light received by each optical sensor is compared, and based on this comparison value, the amount of light received by each optical sensor is maintained to be equal. A positioning device comprising: a control means for operating a mechanism to move the first object or the second object. 2. The alignment device according to claim 1, wherein the plurality of diffraction gratings of the second pattern have different score line directions or score line pitches.
JP18365380A 1980-12-24 1980-12-24 alignment device Expired JPS6046361B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18365380A JPS6046361B2 (en) 1980-12-24 1980-12-24 alignment device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18365380A JPS6046361B2 (en) 1980-12-24 1980-12-24 alignment device

Publications (2)

Publication Number Publication Date
JPS57106806A JPS57106806A (en) 1982-07-02
JPS6046361B2 true JPS6046361B2 (en) 1985-10-15

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP18365380A Expired JPS6046361B2 (en) 1980-12-24 1980-12-24 alignment device

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JP (1) JPS6046361B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61123911A (en) * 1984-11-20 1986-06-11 Toshiba Corp Positioning device of ic chip
JPH0629687B2 (en) * 1987-08-25 1994-04-20 日本電気株式会社 Reduction projection exposure system

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JPS57106806A (en) 1982-07-02

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