JPS6047736B2 - Impurity diffusion method - Google Patents
Impurity diffusion methodInfo
- Publication number
- JPS6047736B2 JPS6047736B2 JP7783677A JP7783677A JPS6047736B2 JP S6047736 B2 JPS6047736 B2 JP S6047736B2 JP 7783677 A JP7783677 A JP 7783677A JP 7783677 A JP7783677 A JP 7783677A JP S6047736 B2 JPS6047736 B2 JP S6047736B2
- Authority
- JP
- Japan
- Prior art keywords
- diffusion
- concentration
- substrate
- mixed atmosphere
- diffusion method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009792 diffusion process Methods 0.000 title claims description 35
- 239000012535 impurity Substances 0.000 title claims description 5
- 239000000758 substrate Substances 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 2
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 3
- 239000010453 quartz Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 239000007789 gas Substances 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
Description
【発明の詳細な説明】
この発明は、簡便な装置で再現性のよいガリウム（以下
Ｇａと略記する）拡散を行う不純物拡散方法に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an impurity diffusion method for performing gallium (hereinafter abbreviated as Ga) diffusion with good reproducibility using a simple device.
従来、シリコン（以下Ｓｉと略記する）基板中にＧａを
拡散するには、水素と窒素および水蒸気（以下Ｈｏ＋Ｎ
ｏ＋Ｈ。Conventionally, in order to diffuse Ga into a silicon (hereinafter abbreviated as Si) substrate, hydrogen, nitrogen, and water vapor (hereinafter referred to as Ho+N
o+H.
Ｏと略記する）の混合雰囲気中で酸化ガリウム（以下Ｇ
ａ。Ｏ。と略記する）を還元する方法が主に用いられて
いる。また、Ｓｉ基板表面のＧａ濃度を制御するには、
混合雰囲気中のＨ２Ｏ濃度を制御する方法が用いられて
いる。（Ｈ２＋Ｎ２＋Ｈ３０）の混合雰囲気中でＧａ拡
散を行う従来の装置の例を第１図に示す。この図におい
て、１はＮｏ（ガス）、２はル（ガス）、３は流量計、
４はバルブ、５は拡散炉、６は石英ボート、７はウェハ
ー（Ｓｉ基板）、８はＧａ。ｏ。を入れた石英るつぼ、
９は石英管、１０は純水、１１は恒温槽、１２はアキュ
ムレータ（緩衝室）である。そして、拡散にあたつては
、全ガス系をＮ２１でパージした後、バルブ４でガスの
切換えを行い、流量計３で流量を調節してＨ。２を流す
。また、混合雰囲気中のＨ。Ｏ濃度を制御するにあたつ
ては、（１）純水１０の液温は一定にしておき、純水１
０中をバスオーバーするＮ２１の量を調整してルＯ濃度
を制御する。Gallium oxide (hereinafter abbreviated as G) in a mixed atmosphere of
a. O. (abbreviated as ) is mainly used. In addition, to control the Ga concentration on the surface of the Si substrate,
Methods have been used to control the H2O concentration in the mixed atmosphere. An example of a conventional apparatus for performing Ga diffusion in a mixed atmosphere of (H2+N2+H30) is shown in FIG. In this figure, 1 is No (gas), 2 is Lu (gas), 3 is a flowmeter,
4 is a valve, 5 is a diffusion furnace, 6 is a quartz boat, 7 is a wafer (Si substrate), and 8 is Ga. o. A quartz crucible containing
9 is a quartz tube, 10 is pure water, 11 is a constant temperature bath, and 12 is an accumulator (buffer chamber). For diffusion, after purging the entire gas system with N21, the gas is switched using the valve 4, and the flow rate is adjusted using the flow meter 3. Run 2. Also, H in the mixed atmosphere. In controlling the O concentration, (1) keep the liquid temperature of pure water 10 constant;
The concentration of N21 is controlled by adjusting the amount of N21 that passes over the O2.
（２）純水１０中をバスオーバーするＮ２１の量は一定
にしておき、恒温槽１１により純水１０の温度を変え、
Ｈ。(2) The amount of N21 bathed in the pure water 10 is kept constant, and the temperature of the pure water 10 is changed using the constant temperature bath 11.
H.
Ｏ濃度を制御する。などの方法が用いられる。Control O concentration. The following methods are used.
しかるに、以上のような従来の拡散方法では、再現性の
良い拡散を行うためにルＯ濃度の精密な制御が必要であ
り、これを実現するために恒温槽１１で純水１０の液温
を一定に保たなければならない。However, in the conventional diffusion method as described above, precise control of the concentration of O2 is required in order to perform diffusion with good reproducibility. must be kept constant.
また、拡散中の汚染を回避するために純水１０を常に高
純度に保ち、ルＯを添加するガス系を清浄にしておく必
要があるので、装置の保守、’維持が難しい。さらに、
拡散にあたつてのガス系操作が複雑で、高濃度のル２を
用いる必要があるため危険をともなうなどの欠点があつ
た。この発明は上記の点に鑑みなされたもので、拡散操
作および装置の簡略化を図ることができ、装置の保守、
維持も簡単になり、しかも再現性のよい拡散を容易に行
うことができるようにした不純物拡散方法を提供するこ
とを目的とする。以下この発明の実施例を説明するが、
この発明では、拡散ソースであるＧａ２Ｏ３を還元する
ガスとして乾燥した（Ｈ２＋Ｎ２）混合雰囲気を用いる
ことにより、Ｓ１基板に対するＧａ拡散を容易に再現性
良く行えるようにし、また拡散雰囲気として用いれる上
記混合雰囲気中のＨ２濃度を変えることによりＳｉ基板
表面のＧａ濃度を制御するものである。Furthermore, in order to avoid contamination during diffusion, it is necessary to always maintain the pure water 10 at a high purity and to keep the gas system to which the fluorine is added clean, making maintenance of the apparatus difficult. moreover,
The disadvantages include that the gas system operations for diffusion are complicated and that high concentration of Lu 2 must be used, which is dangerous. This invention was made in view of the above points, and it is possible to simplify the diffusion operation and the device, and it is possible to maintain the device.
It is an object of the present invention to provide an impurity diffusion method that is easy to maintain and can easily perform diffusion with good reproducibility. Examples of this invention will be described below.
In this invention, by using a dry (H2+N2) mixed atmosphere as a gas that reduces Ga2O3, which is a diffusion source, Ga diffusion into the S1 substrate can be easily performed with good reproducibility, and the above mixed atmosphere used as a diffusion atmosphere The Ga concentration on the surface of the Si substrate is controlled by changing the H2 concentration therein.
第２図はこの発明を実施するにあたつての装置の例を示
す。FIG. 2 shows an example of an apparatus for carrying out the invention.
この装置について、便宜上第１図と同一部分に同一番号
を付して説明すれば、１はＮ２（ガス）、２はＨ２（ガ
ス）、３は流量計、４はバルブ、５は拡散炉、６は石英
ボード、７はウェハー（Ｓ１基板）、８はＧａ２Ｏ３を
入れた石英るつぼ、９は石英管である。そして、拡散に
あたつては、ウェハー７とＧａ２Ｏ３を入れた石英るつ
ぼ８をのせた上で石英ボード６を石英管９に挿入し、し
かる後まずＮ２ｌでバージする。次に、Ｎ２ｌに添加す
るＨ２２の流量を調整して所定のＨ２濃度をもつ（Ｈ２
＋Ｎ２）混合雰囲気中で拡散するもので、この場合Ｓｉ
基板表面のＧａ濃度の制御が↓濃度により行えるので、
Ｈ２２の流量を調整すれば目的とする濃度をもつ拡散層
が得られる。第３図Ａ，Ｂはこの発明により拡散した時
の工程図であつて、１３はＳ１基板、１４はＧａ拡散層
であるが、まずＳｉ基板１３を洗浄および乾燥した５後
、上述の乾燥した（Ｈ２＋Ｎ２）混合雰囲気中で拡散す
ることによりＧａ拡散層１４が形成される。For convenience, this device will be described with the same numbers assigned to the same parts as in Figure 1: 1 is N2 (gas), 2 is H2 (gas), 3 is a flow meter, 4 is a valve, 5 is a diffusion furnace, 6 is a quartz board, 7 is a wafer (S1 substrate), 8 is a quartz crucible containing Ga2O3, and 9 is a quartz tube. For diffusion, the wafer 7 and the quartz crucible 8 containing Ga2O3 are placed thereon, and then the quartz board 6 is inserted into the quartz tube 9, and then it is first purged with N2l. Next, adjust the flow rate of H22 added to N2l to maintain a predetermined H2 concentration (H2
+N2) diffuses in a mixed atmosphere, in this case Si
Since the Ga concentration on the substrate surface can be controlled by the ↓ concentration,
By adjusting the flow rate of H22, a diffusion layer having the desired concentration can be obtained. 3A and 3B are process diagrams for diffusion according to the present invention, in which 13 is an S1 substrate and 14 is a Ga diffusion layer.First, the Si substrate 13 is cleaned and dried. A Ga diffusion layer 14 is formed by diffusion in a (H2+N2) mixed atmosphere.
第４図は、（Ｈ２＋Ｎ２）混合雰囲気中のＨ２濃度に０
．２〜１５％の範囲内で水準を設けて、たとえばＮ型０
．５Ω一礪のＳｉ基板に対して９５０′Ｃで拡散した時
の…濃度に対するＳｉ基板表面のＧａ濃度Ｎ，の変化を
示すもので、この図から↓濃度によりＮｓを制御できる
ことがわかる。したがつて、以上のようなこの発明によ
る拡散・方法によれば、乾燥した（Ｈ２＋Ｎ２）混合雰
囲気中でＧａ２Ｏ３を還元してＧａを拡散するようにし
たので、拡散操作および装置の簡略化を図ることができ
、装置の保守、維持も簡単になり、しかも再現性の良い
拡散を容易に行えるもので、このように大なる効果を有
する。Figure 4 shows that the H2 concentration in the (H2 + N2) mixed atmosphere is 0.
．． For example, by setting a level within the range of 2 to 15%,
．． This figure shows the change in the Ga concentration N on the Si substrate surface with respect to the concentration when diffused at 950'C into a 5Ω Si substrate. From this figure, it can be seen that Ns can be controlled by changing the concentration. Therefore, according to the above-described diffusion method according to the present invention, Ga is diffused by reducing Ga2O3 in a dry (H2 + N2) mixed atmosphere, thereby simplifying the diffusion operation and the apparatus. The device can be easily maintained and maintained, and diffusion with good reproducibility can be easily performed, thus having great effects.
第１図は従来のＧａ拡散装置の例を示す図、第２図はこ
の発明を実施するにあたつてのＧａ拡散装置の例を示す
図、第３図Ａ，Ｂはこの発明により拡散した時の工程図
、第４図はこの発明の実験結果を示す図である。
１・・・・・・Ｎ２、２・・・・・・Ｈ２、３・・・・
・・流量計、５・・・拡散炉、７・・・・・・ウェハー
、８・・・・・・石英るつぼ、９・・・・石英管、１３
・・・・・・Ｓｉ基板、１４・・・・・・Ｇａ拡散層。Fig. 1 is a diagram showing an example of a conventional Ga diffusion device, Fig. 2 is a diagram showing an example of a Ga diffusion device in carrying out the present invention, and Fig. 3 A and B are diagrams showing an example of a Ga diffusion device according to the present invention. FIG. 4 is a diagram showing the experimental results of this invention. 1...N2, 2...H2, 3...
...Flowmeter, 5...Diffusion furnace, 7...Wafer, 8...Quartz crucible, 9...Quartz tube, 13
...Si substrate, 14...Ga diffusion layer.
Claims (1)
散ソースである酸化ガリウムを乾燥した水素と窒素の混
合雰囲気中で還元して基板内に拡散することを特徴とす
る不純物拡散方法。 ２ 拡散雰囲気として用いる乾燥した水素と窒素の混合
雰囲気中の水素濃度を変えることにより、基板表面のガ
リウム濃度を制御することを特徴とする特許請求の範囲
第１項記載の不純物拡散方法。[Claims] 1. An impurity diffusion method characterized in that when gallium is diffused into a silicon substrate, gallium oxide, which is a diffusion source, is reduced in a mixed atmosphere of dry hydrogen and nitrogen and diffused into the substrate. . 2. The impurity diffusion method according to claim 1, wherein the gallium concentration on the substrate surface is controlled by changing the hydrogen concentration in a mixed atmosphere of dry hydrogen and nitrogen used as a diffusion atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7783677A JPS6047736B2 (en) | 1977-07-01 | 1977-07-01 | Impurity diffusion method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7783677A JPS6047736B2 (en) | 1977-07-01 | 1977-07-01 | Impurity diffusion method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5413258A JPS5413258A (en) | 1979-01-31 |
| JPS6047736B2 true JPS6047736B2 (en) | 1985-10-23 |
Family
ID=13645117
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7783677A Expired JPS6047736B2 (en) | 1977-07-01 | 1977-07-01 | Impurity diffusion method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6047736B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0797561B2 (en) * | 1985-02-18 | 1995-10-18 | 旭化成工業株式会社 | Vapor phase impurity diffusion method |
-
1977
- 1977-07-01 JP JP7783677A patent/JPS6047736B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5413258A (en) | 1979-01-31 |
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