Deprecated: The each() function is deprecated. This message will be suppressed on further calls in /home/zhenxiangba/zhenxiangba.com/public_html/phproxy-improved-master/index.php on line 456
JPS6048066B2 - magnetic bubble memory device - Google Patents
[go: Go Back, main page]

JPS6048066B2 - magnetic bubble memory device - Google Patents

magnetic bubble memory device

Info

Publication number
JPS6048066B2
JPS6048066B2 JP7214778A JP7214778A JPS6048066B2 JP S6048066 B2 JPS6048066 B2 JP S6048066B2 JP 7214778 A JP7214778 A JP 7214778A JP 7214778 A JP7214778 A JP 7214778A JP S6048066 B2 JPS6048066 B2 JP S6048066B2
Authority
JP
Japan
Prior art keywords
bubble memory
magnetic
memory device
magnetic bubble
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP7214778A
Other languages
Japanese (ja)
Other versions
JPS551604A (en
Inventor
庄治 吉本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7214778A priority Critical patent/JPS6048066B2/en
Publication of JPS551604A publication Critical patent/JPS551604A/en
Publication of JPS6048066B2 publication Critical patent/JPS6048066B2/en
Expired legal-status Critical Current

Links

Description

【発明の詳細な説明】 本発明は磁気バブルメモリデバイス、特に磁気バブルメ
モリチップを搭載する絶縁基板の構造に関するものてあ
る。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a magnetic bubble memory device, and more particularly to the structure of an insulating substrate on which a magnetic bubble memory chip is mounted.

一般に磁気バブルメモリデバイスの一部を構成するバイ
アス磁気回路の代表例として、第1図に示すような磁気
シールド機能を備えたダブルコイル型(バツクツーバツ
ク型)磁気回路が提案されている。
As a typical example of a bias magnetic circuit constituting a part of a magnetic bubble memory device, a double coil type (back-to-back type) magnetic circuit having a magnetic shielding function as shown in FIG. 1 has been proposed.

同図において、1a、lbはセラミックなどによつて形
成された絶縁基板(以下基板と称する)であり、この基
板1a、lbの中央部には同一規格の磁気バブルメモリ
チップ(以下チップと称する)2a、2bが固定配置さ
れている。また、この基板1a、lbの表面には上記チ
ップ2a、2b(7)微小人出力信号を受授する図示し
ない複数本の信号配線パタンが被着形成され、上記基板
1a、lb(7)端部に配設された図示しない端子にそ
れぞれ接続されている。また、上記基板1a、Ibの外
周面側にはそれぞれX軸方向にX方向駆動コイル3aお
よびY軸方向にY方向駆動コイル3bが互いに直交して
巻設され、上記チップ2a、2bに水平な回転磁界を供
給している。また、このX方向駆動コイル3a) Y方
向駆動コイル3bの側面側には、上記チップ2a、2b
に均一なバイアス磁界を与える永久磁石4がその極性を
矢印方向に一致させて整磁板5a、5b、5cを介して
配置されている。そして、この永久磁石4の外面側には
外部磁界を遮蔽する例えばパーマロイなどによつて形成
されたシールド板6が配置されている。この場合、上記
チップ2a、2bは、矢印で示した方向に永久磁石4の
逆磁界が印加されるため、デバイスの上段側ではチップ
2a表面を上向きに実装させ、その下段側ではチップ2
b表面を下向きに実装されている。このように構成され
た磁気バブルメモリデバイスは、チップ2a、2bから
の情報信号出力が数mVであるのに対して、回転磁界用
x方向、Y方向駆動コイル3a、3bおよび図示しない
磁気バブル制御用コンダクタに供給するパルス電流、電
フ圧が通常1〜、3桁大きいため、第2図にブロック図
で示したように信号出力系と駆動系とに分離して構成し
ていた。
In the figure, 1a and lb are insulating substrates (hereinafter referred to as substrates) made of ceramic or the like, and in the center of these substrates 1a and 1b are magnetic bubble memory chips of the same standard (hereinafter referred to as chips). 2a and 2b are fixedly arranged. Further, on the surfaces of the substrates 1a, lb, a plurality of signal wiring patterns (not shown) for receiving and receiving the microhuman output signals of the chips 2a, 2b (7) are formed, and the edges of the substrates 1a, lb (7) are formed. Each terminal is connected to a terminal (not shown) provided in the section. Furthermore, an X-direction drive coil 3a in the X-axis direction and a Y-direction drive coil 3b in the Y-axis direction are wound on the outer peripheral surfaces of the substrates 1a and Ib, respectively, so as to be perpendicular to each other. It supplies a rotating magnetic field. In addition, the chips 2a, 2b are provided on the side surface side of the X-direction drive coil 3a) and the Y-direction drive coil 3b.
Permanent magnets 4 that provide a uniform bias magnetic field are arranged with their polarities aligned in the direction of the arrows with magnetic field shunt plates 5a, 5b, and 5c interposed therebetween. A shield plate 6 made of permalloy or the like, for example, is arranged on the outer surface of the permanent magnet 4 to shield it from external magnetic fields. In this case, since the reverse magnetic field of the permanent magnet 4 is applied to the chips 2a and 2b in the direction shown by the arrow, the surface of the chip 2a is mounted upward on the upper side of the device, and the chip 2 is mounted on the lower side of the device.
b Mounted with the surface facing downward. In the magnetic bubble memory device configured in this way, the information signal output from the chips 2a and 2b is several mV, whereas Since the pulse current and voltage supplied to the conductor are usually one to three orders of magnitude larger, the signal output system and drive system have been constructed separately as shown in the block diagram of FIG.

すなわち同図において、7は磁気バブル信号出力系の直
接周辺回路部、8は上記チップ2aからの引出し配線、
9は上記チップ25bからの引出し配線、10は第1図
に相当するバイアス磁気回路、11は下段基板lbの駆
動回路系、12は上段基板1aの駆動回路系、13は駆
動系の直接周辺回路部である。しかしながら上記構成に
よるダブルコイル型磁気回路において、チップ2a,2
b搭載用基板1a,1bは、それぞれ上段、下段側で基
板の配線パターンが異なるため、それぞれ上、下段用に
2種類の基板2a,2bを設計し、手配し、両者バラン
スよく在庫を確保しなければならず、極めて不経済てあ
る。
That is, in the figure, 7 is a direct peripheral circuit section of the magnetic bubble signal output system, 8 is a lead-out wiring from the chip 2a,
Reference numeral 9 indicates a lead-out wiring from the chip 25b, 10 indicates a bias magnetic circuit corresponding to that shown in FIG. 1, 11 indicates a drive circuit system for the lower substrate 1b, 12 indicates a drive circuit system for the upper substrate 1a, and 13 indicates a direct peripheral circuit of the drive system. Department. However, in the double coil type magnetic circuit with the above configuration, the chips 2a, 2
b Since the mounting boards 1a and 1b have different wiring patterns on the upper and lower sides, two types of boards 2a and 2b are designed and arranged for the upper and lower sides, respectively, and a well-balanced inventory of both is ensured. This is extremely uneconomical.

したがつて、本発明の目的は上記の点に着目してなされ
たものであり、極めて経済的に基板を確保できるように
した磁気バブルメモリデバイスを提供することにある。
SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a magnetic bubble memory device in which a substrate can be secured extremely economically.

このような目的を達成するために本発明による磁気バブ
ルメモリデバイスは、1枚の基板で上、下段を兼用でき
るようにしたものである。以下図面を用いて本発明によ
る磁気バブルメモリデバイスを詳細に説明する。第3図
A,bは本発明による磁気バブルメモリデバイス、特に
絶縁基板の一実施例を示す要部平面図である。
In order to achieve this object, the magnetic bubble memory device according to the present invention is such that a single substrate can serve as both the upper and lower stages. The magnetic bubble memory device according to the present invention will be described in detail below with reference to the drawings. FIGS. 3A and 3B are plan views of essential parts showing an embodiment of the magnetic bubble memory device according to the present invention, particularly an insulating substrate.

これらの図において、14は例えばセラミックス等から
なる絶縁基板(以下基板と称する)であり、同図aはこ
の基板14の表面側14aを示し、同図bはこの基板1
4の裏面側14bを示したものである。そして、この基
板14の表面側14aおよびその裏面側14bには、こ
の基板14面に対して対称で全く同一形状寸法から,な
る微少入出力信号配線パターン15a1その端子15b
および駆動入出力信号配線パターン5C1その端子15
dがそれぞれ被着形成されている。このように構成され
た基板14は、その表面側314a1その裏面側14b
にそれぞれ磁気バブルメモリチップ(以下チップと称す
る)16a〜16eをボンデングワイヤ17を介して対
応する上記配線パターン群15a,15cにそれぞれ接
続し、第4図に示したバイアス磁気回路に図示しな36
い回転磁界用X,Y方向駆動コイルを巻設して実装する
In these figures, 14 is an insulating substrate (hereinafter referred to as the substrate) made of, for example, ceramics, and figure a shows the front side 14a of this substrate 14, and figure b shows the front side 14a of this substrate 14.
This figure shows the back side 14b of 4. On the front side 14a and the back side 14b of this board 14, minute input/output signal wiring patterns 15a1 and terminals 15b, which are symmetrical with respect to the board 14 surface and have exactly the same shape and dimensions, are provided.
and drive input/output signal wiring pattern 5C1 its terminal 15
d are formed by adhesion, respectively. The substrate 14 configured in this manner has a front side 314a1 and a back side 14b.
Magnetic bubble memory chips (hereinafter referred to as chips) 16a to 16e are connected to the corresponding wiring pattern groups 15a and 15c via bonding wires 17, respectively, to the bias magnetic circuit shown in FIG. 36
A rotating magnetic field X and Y direction drive coil is wound and mounted.

この場合、第3図aに示す基板14の表面側14aは、
チップ16a〜16eの表面とを同一面上に一致させて
配列し、上向の状態に第4図に示す整磁板5aと5b間
に実装されており、4C第3図bに示す基板14の裏面
側14bは、そ面にチップ16a〜16eの表面を一致
させて配列し、これを下向きの状態にして第4図に示す
整磁板5bと5c間に実装されている。一 このような
構成によれば、上段、下段側の基板14は、微小人出力
信号配線端子15bおよび駆動入出力信号配線端子15
bを同一方向にかつ互いに反対方向に引き出すことがで
きるため、信号系と駆動系間に発生する静電結合を確実
に防止すクることができる。
In this case, the front side 14a of the substrate 14 shown in FIG.
The surfaces of the chips 16a to 16e are aligned on the same plane and mounted between the magnetic shunt plates 5a and 5b shown in FIG. 4 in an upward direction, and the substrate 14 shown in FIG. The chips 16a to 16e are arranged on the rear side 14b with the front surfaces of the chips 16a to 16e facing downward and mounted between the magnetic shunt plates 5b and 5c shown in FIG. 4. - According to such a configuration, the upper and lower substrates 14 are connected to the micro person output signal wiring terminal 15b and the drive input/output signal wiring terminal 15.
Since the signals b can be drawn out in the same direction and in opposite directions, it is possible to reliably prevent electrostatic coupling between the signal system and the drive system.

また一枚の基板14をその表裏面を上段側と下段側で共
用できるため、在庫をバランス良く維持することができ
る。以上説明したように本発明による磁気バブルメモリ
デバイスは、基板が表裏で全く逆の配線パタ7−ンを設
けたことによつて、基板を共用することができるため、
在庫をバランス良く維持することができ、極めて経済的
となるなどの優れた効果が得られる。
In addition, since the front and back surfaces of one board 14 can be shared between the upper and lower sides, inventory can be maintained in a well-balanced manner. As explained above, the magnetic bubble memory device according to the present invention can share the substrate by providing completely opposite wiring patterns on the front and back sides of the substrate.
Excellent effects such as being able to maintain a well-balanced inventory and being extremely economical can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はダブルコイル型磁気回路の一例を示す要部断面
図、第2図は磁気バブルメモリデバイスの要部ブロック
図、第3図A,bは本発明による磁気バブルメモリデバ
イス特に基板の表面側、その裏面側の一例を示す要部平
面図、第4図は本発明による磁気バブルメモリデバイス
の一例を示す要部斜視図である。 1a,1b・・・・・・絶縁基板(基板)、2a,2b
・・・・磁気バブルメモリチップ(チップ)、3a・・
・・・・X方向駆動コイル、3b・・・・・・Y方向駆
動コイル、4・・・・・・永久磁石、5a,5b,5c
・・・・・・整磁板、6・・・・・ウールド板、7・・
・・・・磁気バブル信号出力系の直接周辺回路部、8,
9・・・・・引出し配線、10・・・・・・バイアス磁
気回路、11,12・・・・・・駆動回路系、13・・
・・・・駆動系の直接周辺回路部、14・・・・絶縁基
板(基板)、14a・・・・・・表面側、14b・・・
・・・裏面側、15a・・・・・・微少入出力信号配線
パターン、15b・・・・・・端子、15c・・・・・
・駆動入出力信号配線パターン、15d・・・・・・端
子、16a〜16e・・・・・・磁気バブルメモリチッ
プ(チップ)、17・・・・・・ボンディングワイヤ。
FIG. 1 is a cross-sectional view of the main parts showing an example of a double-coil type magnetic circuit, FIG. 2 is a block diagram of the main parts of a magnetic bubble memory device, and FIGS. FIG. 4 is a plan view of essential parts showing an example of the side and back side thereof, and FIG. 4 is a perspective view of essential parts showing an example of the magnetic bubble memory device according to the present invention. 1a, 1b...Insulating substrate (substrate), 2a, 2b
...Magnetic bubble memory chip (chip), 3a...
...X direction drive coil, 3b...Y direction drive coil, 4...Permanent magnet, 5a, 5b, 5c
...Magnetic adjustment plate, 6...Wooled board, 7...
...direct peripheral circuit section of magnetic bubble signal output system, 8,
9... Lead wiring, 10... Bias magnetic circuit, 11, 12... Drive circuit system, 13...
...Direct peripheral circuit section of the drive system, 14...Insulating substrate (substrate), 14a...Front side, 14b...
...Back side, 15a...Minute input/output signal wiring pattern, 15b...Terminal, 15c...
- Drive input/output signal wiring pattern, 15d... terminal, 16a to 16e... magnetic bubble memory chip (chip), 17... bonding wire.

Claims (1)

【特許請求の範囲】[Claims] 1 磁気バブルメモリチップと、前記チップを搭載する
絶縁基板と、前記チップにバイアス磁界を供給する磁気
回路と、前記チップに回転磁界を与えるコイルブロック
とを備えたダブルコイル型磁気バブルメモリデバイスに
おいて、前記絶縁基板は表裏が逆の配線パターンを有す
ることを特徴とした磁気バブルメモリデバイス。
1. A double coil magnetic bubble memory device comprising a magnetic bubble memory chip, an insulating substrate on which the chip is mounted, a magnetic circuit that supplies a bias magnetic field to the chip, and a coil block that applies a rotating magnetic field to the chip, A magnetic bubble memory device, wherein the insulating substrate has a wiring pattern with the front and back sides reversed.
JP7214778A 1978-06-16 1978-06-16 magnetic bubble memory device Expired JPS6048066B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7214778A JPS6048066B2 (en) 1978-06-16 1978-06-16 magnetic bubble memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7214778A JPS6048066B2 (en) 1978-06-16 1978-06-16 magnetic bubble memory device

Publications (2)

Publication Number Publication Date
JPS551604A JPS551604A (en) 1980-01-08
JPS6048066B2 true JPS6048066B2 (en) 1985-10-25

Family

ID=13480854

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7214778A Expired JPS6048066B2 (en) 1978-06-16 1978-06-16 magnetic bubble memory device

Country Status (1)

Country Link
JP (1) JPS6048066B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11028231B2 (en) 2017-06-01 2021-06-08 Dow Silicone Corporation Polysiloxane comprising substituents having multiple aryl groups

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS578821A (en) * 1980-06-18 1982-01-18 Fujitsu Ltd Power converter

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11028231B2 (en) 2017-06-01 2021-06-08 Dow Silicone Corporation Polysiloxane comprising substituents having multiple aryl groups

Also Published As

Publication number Publication date
JPS551604A (en) 1980-01-08

Similar Documents

Publication Publication Date Title
US4219882A (en) Magnetic domain devices
JPH0679990A (en) Ic memory card
US20210003642A1 (en) Magnetic sensor
JPH1074625A (en) Inductor element
JPS6048066B2 (en) magnetic bubble memory device
JPS59136963A (en) Multilayer mounting structure of memory storage
US3381281A (en) Thin film magnetic storage apparatus, method and article of manufacture
JPS5945985U (en) Comb-shaped magnetic circuit board
JPH05326833A (en) Semiconductor mounting substrate
JPH0593010U (en) Electromagnetic coil
JPH0410559A (en) Semiconductor package
JPH02239577A (en) Hybrid integrated circuit for surface mounting
JPH0636592Y2 (en) Hybrid integrated circuit device
JPS6113680B2 (en)
JPS6122660A (en) Semiconductor device
JPS59161892A (en) Pattern circuit board
JPH0648954Y2 (en) Electromagnetic filter composite parts
JPS58147783A (en) Liquid crystal display
JPS63226084A (en) magnetoresistive element
JPH02181994A (en) Flexible board mounting structure
JPS6164186A (en) Mounting structure of electronic part leadless package
JPS60117853A (en) Mic circuit
JPH01304794A (en) Method for laying out substrate for integrated circuit device
JPS61246991A (en) Magnetic bubble memory device
JPS6134771U (en) printed wiring board