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JPS6048836B2 - Magnetic bubble memory module for high speed drive - Google Patents
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JPS6048836B2 - Magnetic bubble memory module for high speed drive - Google Patents

Magnetic bubble memory module for high speed drive

Info

Publication number
JPS6048836B2
JPS6048836B2 JP3749080A JP3749080A JPS6048836B2 JP S6048836 B2 JPS6048836 B2 JP S6048836B2 JP 3749080 A JP3749080 A JP 3749080A JP 3749080 A JP3749080 A JP 3749080A JP S6048836 B2 JPS6048836 B2 JP S6048836B2
Authority
JP
Japan
Prior art keywords
bubble memory
memory module
magnetic bubble
magnetic
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP3749080A
Other languages
Japanese (ja)
Other versions
JPS55146688A (en
Inventor
亮 井村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3749080A priority Critical patent/JPS6048836B2/en
Publication of JPS55146688A publication Critical patent/JPS55146688A/en
Publication of JPS6048836B2 publication Critical patent/JPS6048836B2/en
Expired legal-status Critical Current

Links

Description

【発明の詳細な説明】 本発明は高速駆動用磁気バブルメモリモジュールの熱放
散に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to heat dissipation in magnetic bubble memory modules for high speed operation.

磁気バブルメモリの高速駆動を実現するためには高速の
チップ開発と並行して高速動作が可能なモジュール(チ
ップに必要な回転磁界とバイアス磁界とを発生する部分
)を開発することが必要てある。
In order to realize high-speed drive of magnetic bubble memory, it is necessary to develop a module (a part that generates the rotating magnetic field and bias magnetic field necessary for the chip) that can operate at high speed in parallel with the development of a high-speed chip. .

このうちモジュールについては回転磁界発生コイルの発
熱によるチップの温度上昇が最も大きな問題となつてい
る。この温度上昇はチップの動作可能なバイアスマージ
ン幅を狭くし、チップ動作を不安定にする。高速駆動の
ために回転磁界周波数を上げるとコイルの損失が増加し
、この問題はより一層厳しくなる。従つて、モジュール
内でのチップの温度上昇をおさえるためにはコイルの損
失を小さくすることとモジュールの放射設計とが重要で
ある。従来の典型的な高速駆動用磁気バブルメモリモジ
ュールの概要構成を第1図に示す。
Among these, the biggest problem with modules is the rise in chip temperature due to heat generated by the rotating magnetic field generating coil. This temperature rise narrows the bias margin width in which the chip can operate, making the chip operation unstable. Increasing the frequency of the rotating magnetic field for high-speed drive increases coil loss, making this problem even more severe. Therefore, in order to suppress the temperature rise of the chip within the module, it is important to reduce the loss of the coil and to design the radiation of the module. FIG. 1 shows a schematic configuration of a typical conventional high-speed drive magnetic bubble memory module.

同図において、磁気バブルメモリチップを搭載した基板
1を取り囲んで内コイル2と外コイル3とが直交配置さ
れている。この内コイル2と外コイル3とにそれぞれ互
に900位相の違う正弦波電流を流すことによつて、基
板1上に搭載されている磁気バブルチップの面に平行な
回転磁界が発生される。一方、永久磁石4、4と磁気的
に結合されているフェライト等からなる整磁板5、5に
よつて、磁気バブルチップの面に垂直なバイアス磁界が
与えられる。さらに、図示していないが、整磁板5、5
・の外側には磁気シールド板を介して放射板が取付けら
れている。このような構成の磁気バブルメモリモジュー
ルにおいて、正弦波電流を内、外コイル2、3にそれぞ
れ流すと、コイルの損失抵抗により内、外コフイル2、
3が発熱する。
In the figure, an inner coil 2 and an outer coil 3 are arranged orthogonally surrounding a substrate 1 on which a magnetic bubble memory chip is mounted. A rotating magnetic field parallel to the surface of the magnetic bubble chip mounted on the substrate 1 is generated by passing sinusoidal currents having a phase difference of 900 degrees to each other through the inner coil 2 and the outer coil 3. On the other hand, a bias magnetic field perpendicular to the surface of the magnetic bubble chip is applied by magnetic shunt plates 5, 5 made of ferrite or the like that are magnetically coupled to the permanent magnets 4, 4. Furthermore, although not shown, magnetic shunt plates 5, 5
A radiation plate is attached to the outside of the unit via a magnetic shield plate. In a magnetic bubble memory module having such a configuration, when a sinusoidal current is passed through the inner and outer coils 2 and 3, the inner and outer coils 2 and 3 are caused by the loss resistance of the coils.
3 has a fever.

この発熱量が損失抵抗に比例し、コイル電流の2乗に比
例する。また回転磁界周波数が増加すると、高周波損失
により、コイルの損失抵抗が増加するので、その結果、
発熱量が大きくなる。それゆえに、基板1上に搭載さ5
れたチップの温度もそれに応じて上昇して行く。例えば
、回転磁界周波数を500KH2)回転磁界振幅を50
エルステッドとした場合、内、外コイル2,3の合計消
費量電力は約25Wとなり、チップの温度上昇は25〜
40℃となる。この温度に範囲があるのは1つのモジュ
ール内に1組のコイル2,3を入れるか、複数組のコイ
ル2,3を入れるかによつて生じるものである。従つて
、チップの温度はこの内、外コイル2,3の発熱による
温度とモジュールに置かれている環境温度との合計にな
る。普通、この環境温度は0〜+50℃位の幅がある。
一方、磁気バブルメモリチップの動作温度範囲はその温
度特性から0 〜70℃が限度である。
The amount of heat generated is proportional to the loss resistance and proportional to the square of the coil current. Also, as the rotating magnetic field frequency increases, the loss resistance of the coil increases due to high frequency loss, and as a result,
The amount of heat generated increases. Therefore, 5 mounted on board 1
The temperature of the chip also increases accordingly. For example, the rotating magnetic field frequency is 500KH2) the rotating magnetic field amplitude is 50KH2)
In the case of Oersted, the total power consumption of the inner and outer coils 2 and 3 is approximately 25W, and the temperature rise of the chip is approximately 25W.
It becomes 40℃. This range of temperatures occurs depending on whether one set of coils 2 and 3 or multiple sets of coils 2 and 3 are included in one module. Therefore, the temperature of the chip is the sum of the temperature generated by the outer coils 2 and 3 and the environmental temperature placed in the module. Normally, this environmental temperature ranges from 0 to +50°C.
On the other hand, the operating temperature range of a magnetic bubble memory chip is limited to 0 to 70°C due to its temperature characteristics.

それゆえに、上述の磁気バブルメモリモジュールはその
使用環境温度範囲か非常に制限されるという欠点を有し
ており、その改善が望まれている。従つて、本発明の目
的は上記欠点を解消した高速駆動用磁気バブルメモリモ
ジュールを提供することにある。上記目的を達成するた
め、本発明においては内コイルと整磁板と永久磁石とに
よつて囲まれた空間の熱伝達に注目し、この空間に熱伝
導度がよく、しかも高電気抵抗の伝熱層を設けたことを
特徴としている。
Therefore, the above-described magnetic bubble memory module has a drawback in that its operating environment temperature range is extremely limited, and an improvement is desired. SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a magnetic bubble memory module for high-speed operation that eliminates the above-mentioned drawbacks. In order to achieve the above object, the present invention focuses on heat transfer in the space surrounded by the inner coil, magnetic field shunt plate, and permanent magnet, and creates a space that has good thermal conductivity and high electrical resistance. It is characterized by the provision of a thermal layer.

磁気バブルメモリモジュールをこのような構成とするこ
とによつて、内、外コイルで発生した熱−は外コイル経
由て整磁板に伝わるのみばかりでなく内コイル経由で整
磁板あるいは永久磁石に伝達されるので、効率のよい熱
伝達が可能となる。
By configuring the magnetic bubble memory module in this way, the heat generated in the inner and outer coils is not only transmitted to the magnetic shunt plate via the outer coil, but also transferred to the magnetic shunt plate or permanent magnet via the inner coil. Therefore, efficient heat transfer is possible.

従つて、内、外コイルの温度と整磁板あるいは永久磁石
表面温度との温度差が非常に小さくなり、そ(の結果、
その使用環境温度範囲が拡大されるという効果が得られ
る。以下、本発明を図面を用いて詳細に説明する。
Therefore, the temperature difference between the temperature of the inner and outer coils and the surface temperature of the magnetic shunt plate or permanent magnet becomes very small.
The effect is that the operating environment temperature range is expanded. Hereinafter, the present invention will be explained in detail using the drawings.

第2図は本発明による高速駆動用磁気バブルメモリモジ
ュールの概要構成図である。同図におい5て、第1図と
同一物であるものは同一番号を使用しており、また、そ
の説明も構成上相違するところのみを詳細に記述する。
第1図において空間を形成していた内コイル2と整磁板
5,5と永久磁石4,4とによつて囲まれた部分6,6
’を第24図に示すように電気抵抗が高くかつ熱伝導度
の良好な伝熱層7,7’に置換する。その結果、熱抵抗
が非常に小さくなり、今まで空間6,6’に閉じ込めら
れていた熱が効率よく整磁板5,5あるいは永久磁石4
,4に伝達される。伝熱層7,7’に要求される条件は
熱伝導度が良好であるばかりでなく、高周波回転磁界に
よるうす電流損失が小さいことが必要である。従つて、
その材料として、金属は不適となり、好適な材料は窒化
硼素成形板、シリコン単結晶板などがあげられる。特に
窒化硼素(BN)の焼結体はベリリヤに次いで熱伝導度
が良好であり、さらに加工も容易であるなどの特性を有
している。伝熱層7,7’としてフBN板を使用すると
、その熱伝導度等から計算して従来の熱抵抗を約50%
減少することができる。実際の実験結果では、従来のモ
ジュールで300KHz駆動の際のチップ温度上昇が2
1℃であつたものが、本発明によるモジュールで500
KHz駆・動の際のチップ温度上昇が15℃であり、そ
の伝熱効果は極めて大きい。
FIG. 2 is a schematic diagram of a magnetic bubble memory module for high-speed driving according to the present invention. In FIG. 5, the same parts as in FIG. 1 are designated by the same numbers, and only the structural differences will be described in detail.
Portions 6, 6 surrounded by the inner coil 2, magnetic field shunt plates 5, 5, and permanent magnets 4, 4 that formed a space in FIG.
' is replaced with heat transfer layers 7, 7' having high electrical resistance and good thermal conductivity as shown in FIG. As a result, the thermal resistance has become extremely small, and the heat that was previously confined in the spaces 6, 6' can be efficiently transferred to the magnetic field shunt plates 5, 5 or the permanent magnets 4.
, 4. The heat transfer layers 7, 7' are required not only to have good thermal conductivity, but also to have low thin current loss due to the high frequency rotating magnetic field. Therefore,
Metal is not suitable as the material, and suitable materials include a boron nitride molded plate, a silicon single crystal plate, and the like. In particular, a sintered body of boron nitride (BN) has characteristics such as having the second best thermal conductivity after Beryllium and being easy to process. When a BN plate is used as the heat transfer layer 7, 7', the conventional thermal resistance can be reduced by about 50%, calculated from its thermal conductivity, etc.
can be reduced. Actual experimental results show that the chip temperature rise when driving at 300 KHz with a conventional module is 2.
What was heated at 1°C can be heated to 500°C with the module according to the present invention.
The chip temperature rise during KHz driving is 15° C., and the heat transfer effect is extremely large.

また、伝熱層7,7’は板状であり、それに接する整磁
板5,5、永久磁石4,4もまた板状である。
Further, the heat transfer layers 7, 7' are plate-shaped, and the magnetic shunt plates 5, 5 and the permanent magnets 4, 4 in contact therewith are also plate-shaped.

従つて、それぞれの接触面は精密加工が施されていない
限り必らずわずかな隙間ができる。この隙間は熱伝達に
とつて大きな抵抗として働く。同様なことが、樹脂等で
その表面を固められた内コイル2と伝熱層7,7’との
接触面についてもいえる。この接触面における熱抵抗を
減らすため、グリースに窒化硼素(BN)粉末を多量に
混入させた熱伝導性グリースを調製し、その接触面に塗
布する。熱抵抗の低いグリースでその接触面の密着性を
改善したので、熱伝達がよソー層改善された。以上述べ
たごとく、モジュール内の空間に窒化硼素板やシリコン
単結晶板のような伝熱層を設けることによつて、内、外
コイルからなる回転磁界発生コイルで発生した熱を効率
よく整磁板や永久磁石に伝達することができるようにな
り、その結果、磁気バブルチップの温度上昇を抑えるこ
とができ、従つて、高速駆動用磁気バブルメモリモジュ
ールの使用環境温度範囲がひろくなる。
Therefore, unless precision machining is applied to each contact surface, there will always be a slight gap. This gap acts as a large resistance to heat transfer. The same can be said of the contact surfaces between the inner coil 2 and the heat transfer layers 7, 7' whose surfaces are hardened with resin or the like. In order to reduce the thermal resistance on this contact surface, a thermally conductive grease containing a large amount of boron nitride (BN) powder is prepared and applied to the contact surface. Since the adhesion of the contact surface was improved using a grease with low thermal resistance, heat transfer was improved. As mentioned above, by providing a heat transfer layer such as a boron nitride plate or a silicon single crystal plate in the space inside the module, the heat generated by the rotating magnetic field generating coil consisting of the inner and outer coils can be efficiently demagnetized. It becomes possible to transmit the information to the plate and the permanent magnet, and as a result, the temperature rise of the magnetic bubble chip can be suppressed, and therefore, the operating environment temperature range of the magnetic bubble memory module for high-speed driving is expanded.

それによつて、磁気バブルメモリの応用範囲が広くなり
、工業上有益なものとなる。
This widens the range of applications of magnetic bubble memory and makes it industrially useful.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の高速駆動用磁気バブルメモリモジュール
の概要構成図、第2図は本発明による高速駆動用磁気バ
ブルメモリモジュールの概要構成図である。 ・・・・・・基板、2 ・・・・・・内コイル、3 ・
・・・・・外コイ・・・・・・永久磁石、5 ・・・・
・・整磁板、6,6’・・・・・・空間、7,7’・・
・・・・伝熱層。
FIG. 1 is a schematic configuration diagram of a conventional magnetic bubble memory module for high-speed drive, and FIG. 2 is a schematic configuration diagram of a magnetic bubble memory module for high-speed drive according to the present invention. ...Board, 2 ...Inner coil, 3 ・
...Outer carp...Permanent magnet, 5...
...Magnetic adjustment plate, 6,6'...Space, 7,7'...
...Heat transfer layer.

Claims (1)

【特許請求の範囲】 1 回転磁界発生用内コイルと整磁板と永久磁石とによ
つて囲まれた空間に窒化硼素形成板およびシリコン単結
晶板の少なくともいずれか一つで形成された伝熱層を設
けたことを特徴とする高速駆動用磁気バブルメモリモジ
ュール。 2 前記伝熱層が前記回転磁界発生用内コイル、前記整
磁板または前記永久磁石と接する面に窒化硼素粉末を含
有させたグリースを介在させたことを特徴とする特許請
求の範囲第1項記載の高速駆動用磁気バブルメモリモジ
ュール。
[Claims] 1. A heat transfer device formed of at least one of a boron nitride forming plate and a silicon single crystal plate in a space surrounded by a rotating magnetic field generating inner coil, a magnetic shunt plate, and a permanent magnet. A magnetic bubble memory module for high-speed driving characterized by having layers. 2. Claim 1, characterized in that the heat transfer layer has grease containing boron nitride powder interposed on the surface in contact with the rotating magnetic field generating inner coil, the magnetic shunt plate, or the permanent magnet. The described magnetic bubble memory module for high-speed driving.
JP3749080A 1980-03-26 1980-03-26 Magnetic bubble memory module for high speed drive Expired JPS6048836B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3749080A JPS6048836B2 (en) 1980-03-26 1980-03-26 Magnetic bubble memory module for high speed drive

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3749080A JPS6048836B2 (en) 1980-03-26 1980-03-26 Magnetic bubble memory module for high speed drive

Publications (2)

Publication Number Publication Date
JPS55146688A JPS55146688A (en) 1980-11-15
JPS6048836B2 true JPS6048836B2 (en) 1985-10-29

Family

ID=12498954

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3749080A Expired JPS6048836B2 (en) 1980-03-26 1980-03-26 Magnetic bubble memory module for high speed drive

Country Status (1)

Country Link
JP (1) JPS6048836B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5999296U (en) * 1982-12-24 1984-07-05 株式会社日立製作所 magnetic bubble device
JPH066715B2 (en) * 1985-08-20 1994-01-26 東芝シリコ−ン株式会社 Thermally conductive silicone grease

Also Published As

Publication number Publication date
JPS55146688A (en) 1980-11-15

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