JPS6050351B2 - 3-pole semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a three-pole semiconductor element that is used by directly brazing a conductive portion on the outer surface of a container to a circuit conductor on a substrate such as a printed wiring without using a lead wire.

2. Description of the Related Art Connecting circuit components to printed wiring on an insulating substrate is widely used to construct electronic circuits.

Conventionally, to connect semiconductor devices in this way, the lead wires of the devices were inserted into holes in the board and brazed to circuit conductors on the board. However, with advances in mounting technology, especially automatic mounting technology, there has been a desire to develop leadless semiconductor elements that can be brazed directly to circuit conductors without using lead wires. SUMMARY OF THE INVENTION An object of the present invention is to provide a leadless structure with a high degree of freedom in attachment to a three-pole semiconductor element such as a transistor or thyristor.

The purpose of this is to connect a three-pole semiconductor element to a semiconductor body, a cylindrical main electrode body with ends that contact the electrodes on both sides, and a third electrode on one side of the semiconductor body. This is achieved by comprising an annular intermediate electrode body surrounding one end of the main electrode body, and a glass tube body spanning between the intermediate electrode body and each of the main electrode bodies at both ends.

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 shows the structure and assembly method of a three-pole semiconductor device according to an embodiment of the present invention. The glass tube 2 is fitted into the small-diameter end 11 of the first main electrode body 1, and the electrode on the lower surface of the semiconductor element 3 is placed on the upper surface of the end 11. Next, the annular intermediate electrode body 4 is placed on the end surface of the glass tube body 2 while being in contact with the electrode 31 located around the top surface of the element body 3, and the connecting electrode body 5 is placed on the electrode 31 located at the center of the top surface of the element body 3. contact with. Subsequently, the second glass tube 6 is placed on the intermediate electrode body 4, and the second main electrode body 7 is placed on the connecting electrode body 5, with the small diameter end 71 of the second main electrode body 7 being fitted into the opening. By arranging each component in this way in the assembly jig 8 and heating the assembly jig, each electrode body 1, 4 is assembled.
, 7 are fused to the glass tube bodies 2 and 6, and brought into pressure contact with each electrode of the semiconductor element body 3 by the weight of the electrode bodies 5 and 7. The connection electrode body 5 may be bonded to the semiconductor body in advance, for example, by brazing. Alternatively, on the contrary, it may be brazed to the end face of the second main electrode body 7 in advance or formed integrally with the second main electrode body 7. Of course, in this case it is necessary to partially modify the assembly method accordingly. Figure 2 shows the appearance of the completed three-pole semiconductor device, which is formed into a cylindrical shape by the first main electrode body 1, intermediate electrode body 4, second main electrode body 7, and glass tubes 2 and 6 spanning between them. It is formed.

In such an element, since the electrodes are located asymmetrically in the axial direction, each electrode 1, 4, 7 is connected to a copper foil on the printed wiring board 10 as shown in FIG. The land 12 and solder 13 can be used for brazing. As described above, the triode semiconductor device according to the present invention has a cylindrical structure including three electrodes and two glass tubes, and has the following advantages.

1 Because it is cylindrical, when attached to printed wiring, only the polarity direction can be determined, and it can be directly attached to any position on the circumferential surface of the electrode by brazing, unlike other leadless cylindrical bipolar structure electronic components. (Resistors, capacitors, inductances, diodes, etc.) and the mounting device for printed wiring can be shared.

2. Due to the leadless structure, the inductance between the semiconductor element and external wiring is small.

3. During assembly, the connection between the semiconductor element and the electrode body and the fusion of the glass tube and the electrode body for sealing the semiconductor element can be performed in the same process, so the assembly work time is short.

[Brief explanation of the drawing]

Fig. 1 is a cross-sectional view showing the arrangement of each part of a three-pole semiconductor device according to the present invention when assembled, Fig. 2 is a perspective view of the completed device, and Fig. 3 is a cross-sectional side view of main parts showing the state in which it is attached. There is. 1, 7... Main electrode body, 2, 6... Glass tube body, 3... Semiconductor element body, 4... Intermediate electrode body, 5... ...Connection electrode body.

Claims (1)

[Claims] 1. A semiconductor element, a cylindrical main electrode body having end portions in contact with electrodes on both surfaces thereof, and one of the main electrodes connected to a third electrode present on one surface of the semiconductor element. 1. A triode semiconductor device comprising: an annular intermediate electrode body surrounding an end of the body; and a glass tube body spanning between the intermediate electrode body and each of main electrode bodies at both ends.