Deprecated: The each() function is deprecated. This message will be suppressed on further calls in /home/zhenxiangba/zhenxiangba.com/public_html/phproxy-improved-master/index.php on line 456
JPS6051815B2 - Input circuit of small electronic device - Google Patents
[go: Go Back, main page]

JPS6051815B2 - Input circuit of small electronic device - Google Patents

Input circuit of small electronic device

Info

Publication number
JPS6051815B2
JPS6051815B2 JP52089980A JP8998077A JPS6051815B2 JP S6051815 B2 JPS6051815 B2 JP S6051815B2 JP 52089980 A JP52089980 A JP 52089980A JP 8998077 A JP8998077 A JP 8998077A JP S6051815 B2 JPS6051815 B2 JP S6051815B2
Authority
JP
Japan
Prior art keywords
nesa
electrode
input
electronic device
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52089980A
Other languages
Japanese (ja)
Other versions
JPS5424542A (en
Inventor
平八郎 海老原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Watch Co Ltd
Original Assignee
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Watch Co Ltd filed Critical Citizen Watch Co Ltd
Priority to JP52089980A priority Critical patent/JPS6051815B2/en
Publication of JPS5424542A publication Critical patent/JPS5424542A/en
Publication of JPS6051815B2 publication Critical patent/JPS6051815B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Electronic Switches (AREA)
  • Electric Clocks (AREA)
  • Logic Circuits (AREA)

Description

【発明の詳細な説明】 本発明は小型電子装置の入力回路に関するものである
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to input circuits for small electronic devices.

小型電子装置に於けるスイッチ類は装置のコストを増
大させるのみならず防水構造、デザイン的にも好ましく
ない影響を与える。
Switches in small electronic devices not only increase the cost of the device, but also have an undesirable effect on the waterproof structure and design.

そこで第1図に示す如く、装置の風防ガラス表面に半
透明又は透明のネサ膜電極1を設け、これをスイッチ電
極とすれば上記欠点が改善される。
Therefore, as shown in FIG. 1, if a translucent or transparent Nesa membrane electrode 1 is provided on the surface of the windshield of the device and used as a switch electrode, the above-mentioned drawbacks can be improved.

第2図aは最も一般的な電極構造を示す図で風防ガラス
2の上にネサ膜電極1が蒸着されて居りこのネサ膜電極
1上に保護膜3(例えば5102)が形成されるが、ネ
サ膜電極1の一部は保護膜3が覆つておらず、ここを直
接人体が触れる事によりスイッチ入力を行う事が出来る
ようになつている。対向する共通電極はケース等を介し
て人体に接触させておく。この場合の入力回路は第3図
の如く極めて単純に構成する事が出来る。インバータ4
の入力端は絶縁ゲート型電界効果トランジスタ(以下M
OSTと略す)のゲートで受ける構成としておけば、そ
の入力抵抗は極めて大きく、その影響は無視して良い。
人体の有する電気的抵抗は普通数百にΩ〜数MΩと考
えて良く、従つて分割用抵抗5とこの値より十分に大き
くしておけば、スイッチが人体により短絡された時、イ
ンバータ4の入力端電位が大巾に変化し、出力の論理状
態が変化する。
FIG. 2a shows the most common electrode structure, in which a NESA film electrode 1 is deposited on a windshield 2, and a protective film 3 (for example, 5102) is formed on this NESA film electrode 1. A part of the Nesa membrane electrode 1 is not covered with the protective film 3, so that a switch input can be performed by directly touching this part with the human body. The opposing common electrodes are brought into contact with the human body via a case or the like. The input circuit in this case can be constructed extremely simply as shown in FIG. Inverter 4
The input terminal of is an insulated gate field effect transistor (hereinafter M
If the configuration is such that the input resistance is received at the gate of the OST (abbreviated as OST), its input resistance is extremely large, and its influence can be ignored.
The electrical resistance of the human body can normally be considered to be from several hundred ohms to several megaohms. Therefore, if the dividing resistor 5 is made sufficiently larger than this value, when the switch is short-circuited by the human body, the inverter 4 will The input terminal potential changes widely, and the logic state of the output changes.

これによりスイッチの入力状態を検出出来る。しカルこ
の方法には大きな欠点がある。即ちネサ膜電極1の数が
増加したり、都合により複数の電極の間隔が狭くなつた
場合、希望するネサ膜電極以外の電極に指先が触れてし
まう恐れがある。従来の接触型入力機構では、指先が少
しでも電極に接触するとスイッチを押したものと判定さ
れてしまうため、希望しない電極に誤つて触れた場合に
誤操作となり、実用的に問題が多かつた。またネサ膜電
極1がむき出しとなつているため、固いものにぶつけた
りした時にキズが付き易く、断線する恐れもあつた。ま
た汗などによる腐蝕にも問題があつた。本発明は上記の
欠点を解消し、簡単な構成でありながら確実な入力回路
を提供することを目的とするものである。 上述の目的
を達成するため本発明は、指先に触れるネサ膜電極の部
分をも保護膜で覆い、ネサ膜電極と人体との間に形成さ
れる容量を使つてスイツチ入力を検出することにある。
This allows the input state of the switch to be detected. However, this method has a major drawback. That is, if the number of Nesa membrane electrodes 1 increases or the distance between the plurality of electrodes becomes narrower for some reason, there is a risk that the fingertip may touch an electrode other than the desired Nesa membrane electrode. With conventional contact-type input mechanisms, if your fingertip touches an electrode even slightly, it is determined that you have pressed a switch, so if you accidentally touch an unwanted electrode, it will result in an erroneous operation, which poses many practical problems. Furthermore, since the Nesa membrane electrode 1 is exposed, it is easily scratched when it is hit against a hard object, and there is also a risk of wire breakage. There was also a problem with corrosion caused by sweat. SUMMARY OF THE INVENTION An object of the present invention is to eliminate the above-mentioned drawbacks and provide a reliable input circuit with a simple configuration. In order to achieve the above object, the present invention covers the part of the Nesa membrane electrode that touches the fingertip with a protective film, and detects switch input using the capacitance formed between the Nesa membrane electrode and the human body. .

以下、本発明の実施例を図面を用いて詳述する。Embodiments of the present invention will be described in detail below with reference to the drawings.

第4図は本発明の一実施例で、ネサ膜電極1はデータタ
イプフリップフロップ9(以下D−FFと略す)のデー
タ入力端に接続されると共に、抵抗8を介してD−FF
9の反転クロック入力端に接続される。
FIG. 4 shows an embodiment of the present invention, in which the NESA film electrode 1 is connected to the data input terminal of a data type flip-flop 9 (hereinafter abbreviated as D-FF), and the D-FF is connected via a resistor 8.
It is connected to the inverted clock input terminal of 9.

該反転クロック入力端にはクロックφが印加されるが、
このクロックφのデューティサイクルが50%であると
第5図の如くあるレベルAに於ける電位は容量7が形成
された時期により高電位側(以下゜゜H゛とする)に寄
つたり低電位側(以下゜゜L゛とする)に寄つたりする
ため入力の検出が難しい。そこで本発明に於ては第6図
に示す如く、クロックφのデューティサイクルの比較的
小さな(又は逆に比較的大きな)クロックφを印加する
。容量7が形成されていない場合にはあるレベルAには
クロックφと同様の波形が若干遅れて現れており、クロ
ックφの立下る直前の値ぱ゛H゛であるためD−FF9
は常に高電位を読み込んで居り、従つてD−FF9の出
力ぱ゛H゛である。時間Tの間、容量7が形成されてい
るとするとレベルAの波形は抵抗8と容量7の影響によ
りなまるが、デューティサイクルが50%でないから必
−ずどちらかの電位に偏位する。
A clock φ is applied to the inverted clock input terminal, but
If the duty cycle of this clock φ is 50%, the potential at a certain level A as shown in FIG. It is difficult to detect the input because the input is close to the side (hereinafter referred to as ゜゜L゛). Therefore, in the present invention, as shown in FIG. 6, a clock φ having a relatively small duty cycle (or conversely, a relatively large clock φ) is applied. If the capacitor 7 is not formed, a waveform similar to that of the clock φ appears at a certain level A with a slight delay, and the value immediately before the fall of the clock φ is H, so the D-FF9
is always reading a high potential, so the output power of D-FF9 is high. Assuming that capacitor 7 is formed during time T, the waveform of level A will be blunted by the influence of resistor 8 and capacitor 7, but since the duty cycle is not 50%, it will necessarily deviate to one of the potentials.

第6図の場合は“゜L゛に偏位し、従つてD−FF9の
出力は若干の遅れを有して゜“L゛となる。容量7の形
成は指先をスイッチ電極上の保護膜上に押しつける事に
より行われるが、第7図に示.す如く近接する電極上1
5に若干かぶさつてもこれらの電極に形成される容量は
小さく、誤動作しにくい。
In the case of FIG. 6, the deviation is to "L", so the output of the D-FF 9 becomes "L" with a slight delay. The capacitor 7 is formed by pressing a fingertip onto the protective film on the switch electrode, as shown in FIG. On the electrodes that are very close to each other
5, the capacitance formed in these electrodes is small and malfunctions are unlikely to occur.

第8図は本発明の他の実施例で、ネサ膜電極1は抵抗要
素10を介しでH゛に接続されると共!にNチャネルM
OSTllを介しでL゛に接続される。
FIG. 8 shows another embodiment of the present invention, in which the Nesa membrane electrode 1 is connected to H through a resistive element 10 and! to N channel M
Connected to L via OSTll.

抵抗要素10の値はMOSTllのオン抵抗より充分大
きくとる。
The value of the resistance element 10 is set to be sufficiently larger than the on-resistance of the MOSTll.

この結果、第9図に示す如くレベルAに於ては電圧の立
上りと立ち下りとで時・定数に差が生じるため、クロッ
クφにデューティサイクルが50%の波形を使用しても
十分な偏位を得る事が出来る。第4図の場合と異り、D
−FFへの読込みはクロックφの立上りで行う。この例
の場合にはMOSTllがオンの時間には抵抗要素10
を通して電流が流れ、消費電力に影響を与える。第10
図は上記の点を改善した実施例で、抵抗要素10と直列
にPチャネルMOSTl2を挿入し、MOSTllがオ
ンの時はMOSTl2がオフとなる事により前記した無
駄な電流が流れるのを防いでいる。
As a result, as shown in Figure 9, at level A, there is a difference in time and constant between the rise and fall of the voltage, so even if a waveform with a duty cycle of 50% is used as the clock φ, there will be a sufficient deviation. You can get a rank. Unlike the case in Figure 4, D
- Reading into the FF is performed at the rising edge of the clock φ. In this example, when MOSTll is on, the resistance element 10
Current flows through it, affecting power consumption. 10th
The figure shows an embodiment that improves the above points, in which a P-channel MOSTl2 is inserted in series with the resistor element 10, and when MOSTll is on, MOSTl2 is turned off, thereby preventing the above-mentioned wasteful current from flowing. .

なお抵抗要素10はPチャネルMOSTのチャネルのオ
ン抵抗を利用した場合をノ示している。MOSTのオン
抵抗はチャネル長を大とし、チャネル巾を小とする事に
より大きく設定出来る。従つてMOSTl2のオン抵抗
が大となるように設計すれば抵抗要素10はMOSTl
2のチャネル抵抗て置換られるから別個に設ける必要は
なくなる。即ち第11図にMOSTl2のオン抵抗はM
OSTllのそれよりも十分に大きくなるように設計す
れば、上記1−7た本発明の目的を達成する事が出来る
Note that the resistance element 10 is shown using the on-resistance of the channel of a P-channel MOST. The on-resistance of the MOST can be set large by increasing the channel length and decreasing the channel width. Therefore, if the on-resistance of MOSTl2 is designed to be large, the resistance element 10
Since the channel resistance of 2 is replaced, there is no need to provide a separate channel resistance. That is, in FIG. 11, the on-resistance of MOSTl2 is M
If it is designed to be sufficiently larger than that of OSTll, it is possible to achieve the above-mentioned objects 1-7 of the present invention.

なお本発明の対象となるタッチスイッチは応々にして操
作する意志がない時にも誤つて触れる場合があるが、あ
る程度強く押さないとスイッチ電極と人体との間に十分
な容量が形成されないため従来の接触型に比して有利で
ある。
It should be noted that the touch switch that is the subject of the present invention may be accidentally touched even when there is no intention to operate it, but if the touch switch is not pressed with some force, sufficient capacitance will not be formed between the switch electrode and the human body. This is advantageous compared to the contact type.

万一誤操作する可能性が強い場合はりユーズ等に連動す
るロックスイッチを設け、入力回路力釦ツク状態にある
場合は前記スイッチ電極に印加されるクロックφの電位
を固定化するなとして誤操作を防止してもよい。これは
単にゲート手段を講ずれば良い。また上記発明の説明中
に於て、スイッチ電極に於ける状態が一旦D−FFによ
つて読み込まれるように説明したが、直接に他のゲート
手段により処理されても良い事はもちろんてある。更に
抵抗要素は比較的大きな値とするため、集積回路内に内
蔵する場合でも外付部品とする場合でも個数が多くなる
と種々の不都合が生ずる恐れがある場合には第12図の
如く入力回路に対しスイッチ電極の接続をスキャンする
事により問題を解決する事が出来る。
In the unlikely event that there is a strong possibility of erroneous operation, a lock switch that is linked to the input circuit is provided, and when the input circuit power button is in the locked state, the potential of the clock φ applied to the switch electrode is not fixed to prevent erroneous operation. You may. This can be achieved by simply implementing a gate method. Further, in the above description of the invention, it has been explained that the state of the switch electrode is once read by the D-FF, but it goes without saying that the state may be directly processed by other gate means. Furthermore, since the resistance elements are set to relatively large values, whether they are built into the integrated circuit or external components, if there is a risk of various problems occurring when the number of resistors increases, it is necessary to set them in the input circuit as shown in Figure 12. On the other hand, the problem can be solved by scanning the switch electrode connections.

この時の各部の駆動波形の一例を第13図に示す。入力
回路以後の処理もスキャン信号Tl,T2・・・・・・
を利用して各スイッチ電極との対応を付ける事が出来る
。以上述べた如く、本発明によれば電極を全面絶縁膜で
覆うことによつて電極と人体との間に形成される容量が
一定以上の大きさになつた時だけスイッチの入力を検出
するように構成されているので、近接する電極との間に
多少の容量が形成されてもその容量値の判別により要求
するスイッチのみ作動させることもできるので、誤動作
の起りにくいタッチスイッチの入力回路を構成すること
がてきる。
An example of the drive waveforms of each part at this time is shown in FIG. Processing after the input circuit also uses scan signals Tl, T2...
It is possible to make a correspondence with each switch electrode using . As described above, according to the present invention, by covering the entire electrode with an insulating film, a switch input is detected only when the capacitance formed between the electrode and the human body exceeds a certain level. Even if some capacitance is formed between adjacent electrodes, it is possible to operate only the required switch by determining the capacitance value, thus creating a touch switch input circuit that is less likely to malfunction. I can do that.

また、複数の電極を全面絶縁膜で覆つたので絶縁膜に穴
を明ける工程も必要なく、且つキズがつきにくく、腐食
も起きにくい構造が容易に得られる。その上、デザイン
的にもコスト的にも優れた実用的な小型電子装置を提供
することができ、その効果は大なるものである。
Furthermore, since the plurality of electrodes are entirely covered with an insulating film, there is no need for the step of making holes in the insulating film, and a structure that is less prone to scratches and corrosion can be easily obtained. Moreover, it is possible to provide a practical compact electronic device that is excellent in terms of design and cost, and the effects are significant.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は小型電子装置の一具体例を示す説明図、第2図
aは従来のタッチスイッチの例を示す要部断面図、第2
図bは本発明の対象となるスイッチ構造を示す要部断面
図、第3図は従来の入力回路を示す部分回路図、第4図
は本発明の実施例を示す部分回路図、第5図,第6図は
第4図の実施例に基づく動作を説明する波形図、第7図
は本実施例の操作状態を示す説明図、第8図は本発明の
他の実施例を示す部分回路図、第9図は第8図に示す実
施例の動作を説明する波形図、第10図,第11図は本
発明の他の実施例を示す部分回路図、第12図は本発明
の更に他の実施例を示す部分回路図、第13図は第12
図の実施例に於ける波形図である。 1・・・ネサ膜電極(ネサ膜)、2・・・風防ガラス、
3・・・保護膜、7・・・容量、8,10・・・抵抗要
素、9・・・データタイプフリップフロップ、11,1
2・・電界効果トランジスタ。
FIG. 1 is an explanatory diagram showing a specific example of a small electronic device, FIG.
Fig. b is a cross-sectional view of the main part showing the switch structure to which the present invention applies, Fig. 3 is a partial circuit diagram showing a conventional input circuit, Fig. 4 is a partial circuit diagram showing an embodiment of the present invention, and Fig. 5 , FIG. 6 is a waveform diagram explaining the operation based on the embodiment of FIG. 4, FIG. 7 is an explanatory diagram showing the operating state of this embodiment, and FIG. 8 is a partial circuit showing another embodiment of the present invention. 9 are waveform diagrams explaining the operation of the embodiment shown in FIG. 8, FIGS. 10 and 11 are partial circuit diagrams showing other embodiments of the present invention, and FIG. 12 is a further embodiment of the present invention. A partial circuit diagram showing another embodiment, FIG.
FIG. 3 is a waveform diagram in the embodiment shown in the figure. 1... Nesa membrane electrode (Nesa membrane), 2... Windshield glass,
3... Protective film, 7... Capacitance, 8, 10... Resistance element, 9... Data type flip-flop, 11, 1
2. Field effect transistor.

Claims (1)

【特許請求の範囲】[Claims] 1 風防上面に形成したネサ膜電極を絶縁膜で保護した
構造の入力装置を有する小型電子装置に於いて、前記風
防上面には複数の前記ネサ膜電極が形成されており、該
複数のネサ膜電極の全面を共通の絶縁膜にて被うととも
に、前記ネサ膜電極に抵抗要素を介して信号を印加し、
前記ネサ膜電極と人体表面との間に形成される容量と前
記抵抗要素とによる信号の遅れと検出することによつて
入力状態を判定する手段を設けたことを特徴とする小型
電子装置の入力回路。
1. In a small electronic device having an input device having a structure in which a NESA membrane electrode formed on the upper surface of the windshield is protected by an insulating film, a plurality of the NESA membrane electrodes are formed on the upper surface of the windshield, and the plurality of NESA membrane electrodes are formed on the upper surface of the windshield. Covering the entire surface of the electrode with a common insulating film, and applying a signal to the Nesa film electrode via a resistive element,
An input device for a small electronic device, characterized in that it is provided with means for determining an input state by detecting a signal delay due to a capacitance formed between the Nesa membrane electrode and the human body surface and the resistive element. circuit.
JP52089980A 1977-07-27 1977-07-27 Input circuit of small electronic device Expired JPS6051815B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52089980A JPS6051815B2 (en) 1977-07-27 1977-07-27 Input circuit of small electronic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52089980A JPS6051815B2 (en) 1977-07-27 1977-07-27 Input circuit of small electronic device

Publications (2)

Publication Number Publication Date
JPS5424542A JPS5424542A (en) 1979-02-23
JPS6051815B2 true JPS6051815B2 (en) 1985-11-15

Family

ID=13985804

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52089980A Expired JPS6051815B2 (en) 1977-07-27 1977-07-27 Input circuit of small electronic device

Country Status (1)

Country Link
JP (1) JPS6051815B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5674389U (en) * 1979-11-13 1981-06-18

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52114370A (en) * 1976-03-23 1977-09-26 Seiko Epson Corp Construction of case for electronic wrist watch

Also Published As

Publication number Publication date
JPS5424542A (en) 1979-02-23

Similar Documents

Publication Publication Date Title
JP2953841B2 (en) Switch device
JP2012043275A (en) Capacitance type input device
US4091610A (en) Switching mechanism for electronic wristwatch
US4053789A (en) Touch actuated system responsive to a combination of resistance and capacitance
CN104932743A (en) Finger print identification device and driving method thereof, and display device
US10599905B2 (en) Fingerprint detection circuit and display device
US11610426B2 (en) In-glass fingerprint sensor and sensing circuit thereof
KR970071892A (en) Finger touch panel type input device
JPS6051815B2 (en) Input circuit of small electronic device
US4247929A (en) Switching mechanism for electronic wristwatch
JP2004201175A (en) Input means having electrostatic sensor
CN105117713B (en) Touch sensing circuit and control method thereof
JPS6232490B2 (en)
US7187812B2 (en) Optical fingerprint sensor with variable resistors
CN106873833B (en) Touch sensing display panel
SU961146A1 (en) Sensor switch
JPS60133617A (en) touch switch device
CN216670695U (en) Touch sensing assembly and electronic equipment
JPH0112302Y2 (en)
JPH0366687B2 (en)
JPS6033551Y2 (en) Touch switch device in small electronic equipment
JPS62139028A (en) touch input panel
JPS5815891B2 (en) Sweet Chikikou
US7667693B2 (en) Touch sensing apparatus using varying signal delay input to a flip-flop
CN109343751B (en) Mobile terminal and driving method