JPS6053749B2 - Aluminum plasma etching method and plasma etching device - Google Patents
Aluminum plasma etching method and plasma etching deviceInfo
- Publication number
- JPS6053749B2 JPS6053749B2 JP7483279A JP7483279A JPS6053749B2 JP S6053749 B2 JPS6053749 B2 JP S6053749B2 JP 7483279 A JP7483279 A JP 7483279A JP 7483279 A JP7483279 A JP 7483279A JP S6053749 B2 JPS6053749 B2 JP S6053749B2
- Authority
- JP
- Japan
- Prior art keywords
- reaction chamber
- aluminum
- gas
- reaction
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims description 32
- 229910052782 aluminium Inorganic materials 0.000 title claims description 31
- 238000000034 method Methods 0.000 title claims description 17
- 238000001020 plasma etching Methods 0.000 title claims description 17
- 238000006243 chemical reaction Methods 0.000 claims description 67
- 238000005530 etching Methods 0.000 claims description 30
- 239000007789 gas Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 26
- 238000001514 detection method Methods 0.000 claims description 8
- 238000010574 gas phase reaction Methods 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 6
- 150000002366 halogen compounds Chemical class 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- KPZGRMZPZLOPBS-UHFFFAOYSA-N 1,3-dichloro-2,2-bis(chloromethyl)propane Chemical compound ClCC(CCl)(CCl)CCl KPZGRMZPZLOPBS-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 210000004185 liver Anatomy 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
- H01J37/185—Means for transferring objects between different enclosures of different pressure or atmosphere
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Description
【発明の詳細な説明】
本発明は、アルミニウムのプラズマエッチング方法およ
びこれを行なうプラズマエッチング装置に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for plasma etching of aluminum and a plasma etching apparatus for performing the same.
半導体装置、たとえばプレーナ型トランジスタの電極あ
るいは、半導体集積回路の相互接続配線を含む電極の材
料としてアルミニウムあるいはアルミニウム合金が広く
使用される。Aluminum or aluminum alloys are widely used as materials for electrodes of semiconductor devices, such as planar transistors, or electrodes including interconnections of semiconductor integrated circuits.
ところで、電極の形成に際しては、これらの材料を被着
して形成したアルミニウム膜を所定のパターンとなすた
めのエッチング処理が不可決であるが、パターンの微細
化、製造プロセスのドライ化あるいは無公・害化などの
目的から、このエッチング処理の方法は従来用いられて
いる水溶液を使用するウェットエッチング法から、プラ
ズマ反応等による所謂ドライエッチング法へと切り換り
つつある。しカルながら、このアルミニウム膜に対して
ガ、スプラズマエツチングを施して微細パターンを形成
する場合、次のような不都合があり、これらが実用化へ
の大きな障害となつている。By the way, when forming electrodes, it is necessary to perform an etching process to form a predetermined pattern on the aluminum film formed by adhering these materials. - For the purpose of preventing damage, the etching method is being switched from the conventional wet etching method using an aqueous solution to a so-called dry etching method using a plasma reaction or the like. However, when forming fine patterns on this aluminum film by gas plasma etching, there are the following disadvantages, which are major obstacles to practical application.
その１つは、パターンの寸法精度が基板間や基板内で一
定とはならず再現性に乏しいことである。One of the problems is that the dimensional accuracy of the pattern is not constant between substrates or within a substrate, resulting in poor reproducibility.
この理由は詳らかではないが、アルミニウム膜の表面に
、自然酸化により極く薄い表面酸化物層の形成されるこ
とが避けられず、エッチングはますこの表面酸化物層か
ら開始するところとなり、この表面酸化膜下のアルミニ
ウム表面でのエッチング反応の開始時期が不揃いとなる
ことに起因すると考えられる。またこの他に、アルミニ
ウムのエッチングが終了した時点でエッチングを終了さ
せるための制御が困難であること、あるいは、処理枚数
を増やすとエッチング速度が低下し大量処理が困難であ
ること等の問題もある。The reason for this is not clear, but it is inevitable that a very thin surface oxide layer is formed on the surface of the aluminum film due to natural oxidation, and etching starts from this surface oxide layer. This is thought to be due to the irregular timing of the start of the etching reaction on the aluminum surface under the oxide film. In addition, there are other problems such as the difficulty in controlling the etching process to end it when the aluminum etching is completed, or the etching speed decreasing when the number of sheets processed increases, making it difficult to process in large quantities. .
本発明は、上記問題点に鑑みてなされたもので気相反応
部としてアルミニウムの主たるエッチングを行うための
主反応室の前に印加される高周波電力が同反応室のそれ
よりも大きく選定された表面酸化層除去の為の予備反応
室を付加するとともにさらに主反応室の後方に反応の終
点を検出する検出手段および該検出手段により作動する
反応停止機構とを具備する終反応室等を加え、これらの
反応室を縦続接続した構成となし、この気相反応室内に
エッチングすべき基板を順次通過させることにより、大
量の基板に対して連続的かつ自動的に均一なエッチング
処理を施すことを目的とするものである。The present invention was made in view of the above problems, and the high frequency power applied in front of the main reaction chamber for performing the main etching of aluminum as a gas phase reaction section is selected to be greater than that in the same reaction chamber. In addition to adding a preliminary reaction chamber for removing the surface oxidized layer, a final reaction chamber, etc., which is equipped with a detection means for detecting the end point of the reaction and a reaction stop mechanism operated by the detection means, is added behind the main reaction chamber. The purpose is to continuously and automatically perform uniform etching on a large number of substrates by cascading these reaction chambers and passing the substrates to be etched through these gas phase reaction chambers one after another. That is.
次に、本発明実施例のガスプラズマエッチング装置およ
びこの装置を用いたアルミニウム膜のガ．スプラズマエ
ツチング方法について図面を参照しつつ説明する。Next, we will discuss the gas plasma etching apparatus according to an embodiment of the present invention and the process for forming an aluminum film using this apparatus. The plasma etching method will be explained with reference to the drawings.
図面に示すように本発明実施例のガスプラズマエッチン
グ装置は、酸素プラズマによる基板清浄化のために第１
反応室１と、四塩化炭素、三塩化ホウ素等のハロゲン化
合物含有のガ５スプラズマによるアルミニウム表面酸化
物除去用の第２反応室２と印加される高周波電力が第２
反応室よりも小さく選定されたアルミニウムエッチング
用のハロゲン化合物含有ガスプラズマによる第３反応室
３と、アルミニウムのエッチング終点４検出手段４５の
検出結果に基いてエッチングを自動的に停止するハロゲ
ン化合物含有ガスプラズマによる第４反応室４と、レジ
スト除去の為の酸素含有プラズマによる第５反応室５と
がゲートバルブ２３，３３，４３，５３を介して直列に
連結されて気相反応部を構成し、搬送トラック（図示せ
ず）によつて気相反応部内の各反応室へ順次基板が運ば
れるしくみとなつている。また、第１反応室の前にはゲ
ートバルブ１３を介して真空状態に保たる第１の予備室
７が設けられ、ここに、半導体基板１０を収納したカセ
ット６が取りつけ可能となつており、このカセットから
基板１０が順次気相反応部内へ供給される。また、第５
反応室５フの後にはゲートバルブ６３を介して真空状態
に保たれ第２の予備室８が設けられ、レジスト膜のエッ
チング処理まで施された基板が、この、予備室内にとり
つけられるカセット９に順次収納される構造となつてい
る。なおそれぞれの反応室１〜５７にガス供給バルブ１
１，１２，３１，４１，５１および真空排気バルブ１２
が、そして第１、第２の予備室７，８にはそれぞれ真空
排気バルブ７２，８２が接続されている。次に、このガ
スプラズマエッチング装置を用いてアルミニウムのプラ
ズマエッチングを行う方法について説明する。As shown in the drawings, the gas plasma etching apparatus according to the embodiment of the present invention has a first
The high frequency power applied to the reaction chamber 1 and the second reaction chamber 2 for removing oxides on the aluminum surface by gas plasma containing halogen compounds such as carbon tetrachloride and boron trichloride is
A third reaction chamber 3 using a halogen compound-containing gas plasma for aluminum etching, which is selected to be smaller than the reaction chamber, and a halogen compound-containing gas that automatically stops etching based on the detection result of the aluminum etching end point 4 detection means 45. A fourth reaction chamber 4 using plasma and a fifth reaction chamber 5 using oxygen-containing plasma for resist removal are connected in series via gate valves 23, 33, 43, and 53 to constitute a gas phase reaction section, The substrates are sequentially transported to each reaction chamber in the gas phase reaction section by a transport truck (not shown). Further, in front of the first reaction chamber, a first preliminary chamber 7 is provided which is maintained in a vacuum state via a gate valve 13, and a cassette 6 containing a semiconductor substrate 10 can be attached thereto. The substrates 10 are sequentially supplied into the gas phase reaction section from this cassette. Also, the fifth
A second preliminary chamber 8 is provided after the reaction chamber 5 and is maintained in a vacuum state through a gate valve 63, and the substrate, which has been subjected to the etching process of the resist film, is placed in a cassette 9 that is installed in this preliminary chamber. The structure is such that they are stored sequentially. In addition, each reaction chamber 1 to 57 has a gas supply valve 1.
1, 12, 31, 41, 51 and vacuum exhaust valve 12
However, vacuum exhaust valves 72 and 82 are connected to the first and second preliminary chambers 7 and 8, respectively. Next, a method of plasma etching aluminum using this gas plasma etching apparatus will be described.
まず、真空排気バルブ１２，８２を開き、各反応室１〜
５および予備室８を０．０１〜０．０４Ｔ０ｒｒに真空
排気し、常に、この状態を維持させておく。First, open the vacuum exhaust valves 12 and 82, and
5 and the preliminary chamber 8 are evacuated to 0.01 to 0.04 T0rr, and this state is always maintained.
次に、基板１０の設置されたカセット６を所定の位置に
設置し、搬送トラックを始動させ、カセットから先ず１
枚の基板を予備室７に搬入する。この状態で、真空排気
バルブ７２を開き予備室内を０．０３〜０．０肝０ｒｒ
′程度まで真空排気する。その後ゲートバルブ１３を開
き、基板１０を基板清浄用の第１反応室１に移したのち
ゲートバルブ１３を閉じ第１反応室１に付設したガス導
入バルブ１１を開けて酸素ガスを第１反応室内へ導入し
、高周波電力を約１分間印加する。この反応では反応室
内ガス圧は０．３〜０．５Ｔ０ｒｒ１高周波電力は６０
〜８０Ｗとなるように調整される。その後ゲートバルブ
２３を開き、基板１０をアルミニウム表面酸化物エッチ
ング用の第２反応室２に移したのち、ゲートバルブ２３
を閉じ第２反応室に付設したガス導入バルブ２１を開け
て四塩化炭素ガスを第２反応室内へ導入し、高周波電力
を約２分間印加してアルミニウム表面酸化物をエッチン
グ除去する。この反応では反応室内ガス圧０．１〜０．
肝０ｒｒ高周波電力は９０〜１００Ｗとなるように調整
される。つぎにゲートバルブ３３を開けて基板１０をア
ルミニウムエッチング用の第３反応室３に移したのち、
ゲートバルブ３３を閉じ、第３反応室に付設したガス導
入バルブ３１を開けて、アルミニウムのエッチングガス
である四塩化炭素を第３反応室内へ導入し、高周波電力
を約４分間印加して、アルミニウム膜の大半をエッチン
グ除去する。この反応では反応室内ガス圧は０．１〜０
．π０ｒｒ高周波電力は４０〜５０Ｗとなるように調整
される。つぎにゲートバルブ４３を開けて、基板１０を
アルミニウムのエッチング終点検出装置４５が設置され
ている第四反応室４に移したのち、ゲートバルブ４３を
閉じ、ガス導入バルブ４１を開けて、四塩化炭素ガスを
第４反応室へ導入し、高周波電力をアルミニウムのエッ
チングが終了する時点まで印加する。この反応では反応
室内ガス圧は０．１〜０．π０ｒｒ１高周波電力は４０
〜５０Ｗとなるように調整される。なお、完全を期す意
味で必要であればエッチングの終点が検出されてからさ
らに１分間程度のオーバーエッチングを行つてもよい。
つぎにゲートバルブ５３を開けて基板１０を第５反応室
５に移したのち、ゲートバルブ５３を閉じ、ガス導入バ
ルブ５１を開けて酸素ガスを第５反応室内へ導入し、高
周波電力を約１紛間印加することによつてアルミニウム
エッチングのマスクとして作用したレジスト膜を除去す
る。この反応では反応室内ガス圧０．３〜０．５Ｔ０ｒ
ｒ１高周波電力６０〜８０Ｗとなるように調整される。
そして最後にゲートバルブ６３を開けて基板１０を予備
室８に移したのちゲートバルブ６３と真空排気バルブ８
２を閉じ、次いでガス導入バルブ８１を開けて窒素ガス
を大気圧まて導入する。Next, the cassette 6 on which the substrate 10 is installed is installed at a predetermined position, the transport truck is started, and the cassette is first
One board is carried into the preliminary room 7. In this state, open the vacuum exhaust valve 72 and let the air in the preliminary chamber reach 0.03 to 0.0 0rr.
Evacuate to about 100 ft. Thereafter, the gate valve 13 is opened and the substrate 10 is transferred to the first reaction chamber 1 for cleaning the substrate.The gate valve 13 is then closed and the gas introduction valve 11 attached to the first reaction chamber 1 is opened to introduce oxygen gas into the first reaction chamber. and apply high frequency power for about 1 minute. In this reaction, the gas pressure in the reaction chamber is 0.3 to 0.5 T0rr1, and the high frequency power is 60
It is adjusted so that it becomes ~80W. Thereafter, the gate valve 23 is opened and the substrate 10 is transferred to the second reaction chamber 2 for aluminum surface oxide etching.
Close the gas inlet valve 21 attached to the second reaction chamber to introduce carbon tetrachloride gas into the second reaction chamber, and apply high frequency power for about 2 minutes to etch away the aluminum surface oxide. In this reaction, the gas pressure in the reaction chamber ranges from 0.1 to 0.
The liver Orr high frequency power is adjusted to 90 to 100W. Next, after opening the gate valve 33 and moving the substrate 10 to the third reaction chamber 3 for aluminum etching,
The gate valve 33 is closed, the gas introduction valve 31 attached to the third reaction chamber is opened, carbon tetrachloride, which is an aluminum etching gas, is introduced into the third reaction chamber, and high frequency power is applied for about 4 minutes to remove aluminum. Most of the film is etched away. In this reaction, the gas pressure in the reaction chamber is between 0.1 and 0.
．． The π0rr high frequency power is adjusted to 40 to 50W. Next, the gate valve 43 is opened and the substrate 10 is transferred to the fourth reaction chamber 4 where the aluminum etching end point detection device 45 is installed.The gate valve 43 is then closed and the gas introduction valve 41 is opened to remove the tetrachloride. Carbon gas is introduced into the fourth reaction chamber, and high frequency power is applied until etching of aluminum is completed. In this reaction, the gas pressure in the reaction chamber is between 0.1 and 0. π0rr1 high frequency power is 40
It is adjusted so that it becomes ~50W. For completeness, if necessary, over-etching may be performed for about one minute after the etching end point is detected.
Next, after opening the gate valve 53 and transferring the substrate 10 to the fifth reaction chamber 5, the gate valve 53 is closed, the gas introduction valve 51 is opened to introduce oxygen gas into the fifth reaction chamber, and the high frequency power is The resist film that acted as a mask for aluminum etching is removed by applying a powder. In this reaction, the gas pressure in the reaction chamber is 0.3 to 0.5 T0r.
The r1 high frequency power is adjusted to 60 to 80W.
Finally, after opening the gate valve 63 and moving the substrate 10 to the preliminary chamber 8, the gate valve 63 and the vacuum exhaust valve 8 are opened.
2 is closed, and then the gas introduction valve 81 is opened to introduce nitrogen gas up to atmospheric pressure.
その後ウェハ１０はカセット９に搬入され、１枚の基板
に対するアルミニウムの微細パターンエッチングが自動
的に完了する。なお、多数枚の基板に対してエッチング
処理を施す場合には、基板の搬送時間間隔を最も長い処
理がなさせる反応室の処理時間と等しく選定して順次基
板をカセットから第１反応室へ搬入するよう装置を設定
することにより、基板に対する各反応室での反応が平行
に行われるところとなり、遊びの時間が排除された連続
処理が可能になる。また、実施例においては、印加する
高周波電力の大きたが異なる第２および第３の反応室を
別室として設けたが、印加電力の大きさが可変であるよ
うな反応室を用い、この反応室へ印加する高周波電力の
大きたを変化させるならば、上記の第２、第３の反応室
において行われたエッチング処理を単一の反応室内で行
うことができ、反応室を１個省略することができる。Thereafter, the wafer 10 is loaded into the cassette 9, and the fine aluminum pattern etching for one substrate is automatically completed. In addition, when etching a large number of substrates, the substrate transport time interval is selected to be equal to the processing time of the reaction chamber in which the longest processing is performed, and the substrates are sequentially transported from the cassette to the first reaction chamber. By configuring the apparatus to do so, the reactions in each reaction chamber on the substrate will occur in parallel, allowing continuous processing with idle time eliminated. In addition, in the example, the second and third reaction chambers were provided as separate chambers with different magnitudes of applied high-frequency power, but by using a reaction chamber in which the magnitude of applied power is variable, this reaction chamber If the magnitude of the high-frequency power applied to is changed, the etching process performed in the second and third reaction chambers can be performed in a single reaction chamber, and one reaction chamber can be omitted. I can do it.
以上説明してきたように、本発明のプラズマエッチング
装置と、これを用いたエッチング方法によれば、多数板
の基板に対して連続的かかつ自動的に均一なエッチング
処理を施すことが可能であり、半導体装置の製造におい
て実用価値は非常に大である。As explained above, according to the plasma etching apparatus of the present invention and the etching method using the same, it is possible to perform uniform etching processing continuously and automatically on multiple substrates. , has great practical value in the manufacture of semiconductor devices.
図は本発明にかかるプラズマエッチング装置の一実施例
の概略構成図である。
１，２，３，４，５・・・・・・プラズマ反応室、６，
９・・・・・・カセット、７，８・・・・・・予備室、
１０・・・・・・基板、１１，２１，３１，４１，５１
，８１・・・・・ガノス導入バルブ、１２，７２，８２
・・・・・・真空排気バルブ、１３，２３，３３，４３
，５３，６３・・ゲートバルブ、４５・・・・・・エッ
チング終点検出装置。The figure is a schematic diagram of an embodiment of a plasma etching apparatus according to the present invention. 1, 2, 3, 4, 5... Plasma reaction chamber, 6,
9...Cassette, 7,8...Preliminary room,
10...Substrate, 11, 21, 31, 41, 51
, 81... Ganos introduction valve, 12, 72, 82
・・・・・・Vacuum exhaust valve, 13, 23, 33, 43
, 53, 63...gate valve, 45... etching end point detection device.
Claims (1)
記アルミニウム被覆の選択エッチング領域部分に、酸素
含有プラズマによる表面の清浄化工程と、印加される高
周波電力が大きく選定されたガスプラズマエッチング処
理によるアルミニウム表面酸化膜の除去工程と、印加さ
れる高周波電力が前記エッチング処理時のそれよりも小
さく選定されたガスプラズマエッチング処理による前記
ガスプラズマエッチング部に露呈するアルミニウム被膜
層の選択的除去工程と、反応の終点を検出して自動的に
反応が停止するよう設定されたガスプラズマエッチング
処理による最終アルミニウム被膜除去工程と、酸素含有
プラズマによるレジストの除去工程との５工程を含む一
連のエッチング処理が連続的に施されることを特徴とす
るアルミニウムのプラズマエッチング方法。 ２ 気相反応室の最前部に位置し、基板表面をクリーニ
ングするための酸素含有プラズマによる反応室、アルミ
ニウムの主たるエッチングを行うためにガスプラズマに
よる主反応室、同主反応室の前に配置され、印加される
高周波電力が前記主反応室に印加される高周波電力より
も大きく選定されたアルミニウム表面酸化膜除去用の予
備反応室、反応の終点を検出する検出手段および該検出
手段により作動する反応停止機構とを具備し前記主反応
室の後方に配置された反応室、最後部に位置し、レジス
トを除去するための酸素含有プラズマによる反応室とが
縦続接続されて構成された気相反応部と、同気相反応部
内に、エッチングを施すべき基板を移送する搬送用トラ
ックとよりなることを特徴とするアルミニウムのプラズ
マエッチング装置。[Scope of Claims] 1. A surface cleaning process using oxygen-containing plasma and a gas in which high frequency power is selected to be applied to a selectively etched region of the aluminum coating of a semiconductor substrate on which an aluminum coating is deposited. a step of removing an oxide film on the aluminum surface by plasma etching treatment; and selective removal of the aluminum film layer exposed in the gas plasma etched portion by gas plasma etching treatment in which the applied high frequency power is selected to be smaller than that during the etching treatment. A series of five steps including a removal step, a final aluminum film removal step using a gas plasma etching process that is set to detect the end point of the reaction and automatically stop the reaction, and a resist removal step using oxygen-containing plasma. A plasma etching method for aluminum, characterized in that etching treatment is performed continuously. 2 Located at the forefront of the gas phase reaction chamber, there is a reaction chamber using oxygen-containing plasma to clean the substrate surface, a main reaction chamber using gas plasma to perform the main etching of aluminum, and a main reaction chamber located in front of the main reaction chamber. , a preliminary reaction chamber for removing an oxide film on the aluminum surface in which the high frequency power applied is selected to be higher than the high frequency power applied to the main reaction chamber, a detection means for detecting the end point of the reaction, and a reaction operated by the detection means. a gas phase reaction section configured by cascade-connecting a reaction chamber equipped with a stop mechanism and located at the rear of the main reaction chamber, and a reaction chamber located at the rear end and using oxygen-containing plasma for removing resist; An aluminum plasma etching apparatus comprising: a transport truck for transporting a substrate to be etched into the same gas phase reaction section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7483279A JPS6053749B2 (en) | 1979-06-13 | 1979-06-13 | Aluminum plasma etching method and plasma etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7483279A JPS6053749B2 (en) | 1979-06-13 | 1979-06-13 | Aluminum plasma etching method and plasma etching device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56278A JPS56278A (en) | 1981-01-06 |
| JPS6053749B2 true JPS6053749B2 (en) | 1985-11-27 |
Family
ID=13558695
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7483279A Expired JPS6053749B2 (en) | 1979-06-13 | 1979-06-13 | Aluminum plasma etching method and plasma etching device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6053749B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02182656A (en) * | 1989-01-09 | 1990-07-17 | Konica Corp | Tension regulation device of web |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5713743A (en) * | 1980-06-30 | 1982-01-23 | Toshiba Corp | Plasma etching apparatus and etching method |
| JPS6057937A (en) * | 1983-09-09 | 1985-04-03 | Ushio Inc | Ultraviolet washing method |
| JPS60174863A (en) * | 1984-02-15 | 1985-09-09 | Showa Alum Corp | Surface treatment of aluminum substrate for forming thin film |
| JPS61263127A (en) * | 1985-05-15 | 1986-11-21 | Rohm Co Ltd | Etching apparatus |
| JPS63153288A (en) * | 1986-12-17 | 1988-06-25 | Hosiden Electronics Co Ltd | Vacuum processing device |
| JPS63160229A (en) * | 1986-12-23 | 1988-07-04 | Orc Mfg Co Ltd | Photoresist removing device |
| JPH0621927Y2 (en) * | 1987-12-21 | 1994-06-08 | カヤバ・マックグレゴー・ナビーレ株式会社 | Movable bridge |
| JP3052264B2 (en) * | 1996-08-22 | 2000-06-12 | 株式会社日立製作所 | Plasma processing equipment |
-
1979
- 1979-06-13 JP JP7483279A patent/JPS6053749B2/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02182656A (en) * | 1989-01-09 | 1990-07-17 | Konica Corp | Tension regulation device of web |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56278A (en) | 1981-01-06 |
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