JPS6054262B2 - High dielectric constant porcelain composition - Google Patents
High dielectric constant porcelain compositionInfo
- Publication number
- JPS6054262B2 JPS6054262B2 JP56026506A JP2650681A JPS6054262B2 JP S6054262 B2 JPS6054262 B2 JP S6054262B2 JP 56026506 A JP56026506 A JP 56026506A JP 2650681 A JP2650681 A JP 2650681A JP S6054262 B2 JPS6054262 B2 JP S6054262B2
- Authority
- JP
- Japan
- Prior art keywords
- dielectric constant
- high dielectric
- porcelain composition
- silicon oxide
- constant porcelain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
Description
【発明の詳細な説明】
本発明は鉄ニオブ酸鉛〔Ｐｂ（Ｆｅ１１２Ｎｂ１１２）
ｑ〕−マグネシウム・タンタル酸鉛〔Ｐｂ（Ｍｇ１１３
Ｔａ２１３）Ｏ。Detailed Description of the Invention The present invention relates to lead iron niobate [Pb(Fe112Nb112)]
q] - Magnesium lead tantalate [Pb (Mg113
Ta213)O.
〕及び酸化ケイ素（Ｓｉ００）を含有せしめた高誘電率
磁器材料に関する。従来高誘電率系誘電体として、チタ
ン酸バリウム〔ＢａＴｉＯ。] and a high dielectric constant ceramic material containing silicon oxide (Si00). Conventionally, barium titanate [BaTiO] is used as a high permittivity dielectric.
〕を主成分とするものが広く実用化されていることは周
知のとおりである。しかしながらＢａＴｉＯ。を主成分
とするものの焼結温度は通常１２００℃〜１４００’Ｃ
の高温であり、特に積層コンデンサの場合にはこの焼結
温度に適した内部電極として、主成分が白金又はパラジ
ウム等の高価な貴金属を使用しなければならないという
欠点を有していた。このため銀等の安価な金属を内部電
極材料として用いることを可能とするためには焼結温度
１０００℃以下の低温にできる誘電体が強く要望されて
いた。本発明の目的は、低温で焼結でき、しかも誘電損
失が小さく且つ比抵抗の高い高誘電率組成物を提供する
ことにある。] It is well known that products containing as a main component are widely put into practical use. However, BaTiO. The sintering temperature for products whose main component is usually 1200°C to 1400'C
In particular, in the case of multilayer capacitors, an expensive noble metal such as platinum or palladium must be used as the main component for internal electrodes suitable for this sintering temperature. Therefore, in order to make it possible to use inexpensive metals such as silver as internal electrode materials, there has been a strong demand for a dielectric material that can be sintered at a low temperature of 1000° C. or lower. An object of the present invention is to provide a high dielectric constant composition that can be sintered at low temperatures, has low dielectric loss, and has high specific resistance.
すなわち本発明の磁器組成物は、
Ｐｂ（Ｆｅ１１２Ｎｂ１１２）００２５〜９９モル％Ｐ
ｂ（Ｍｇｌｌ”゛ａ２１３）０３７５〜１モル％の範囲
からなるＰｂ（Ｆｅ１１２Ｎｂ１ｌ２）ｘ（Ｍｇｌ’３
Ｎｂ２ｌ３）、−、００系主成分に副成分として酸化ケ
イ素を０．００５モル％以上、０．５モル％以下含有せ
しめたものである。That is, the ceramic composition of the present invention contains Pb(Fe112Nb112)0025-99 mol%P
Pb(Fe112Nb1l2)x(Mgl'3
Nb2l3), -, 00 series main component contains silicon oxide as a subcomponent in an amount of 0.005 mol% or more and 0.5 mol% or less.
本発明者は既に知られているＰｂ（Ｆｅ１’２Ｎｂｌ’
２）ｘ（Ｍｇｌ’πａ２ｌ３）、−ｘ０３からなる高誘
電率系磁器組成物に副成分として酸化ケイ素（Ｓｉ００
）を含有せしめたことにより焼結温度を低下せしめ、か
つ誘電損失を小さくし、比抵抗を著しく増大せしめるこ
とを新たに見い出したものである。The present inventor discovered the already known Pb(Fe1'2Nbl'
2) Silicon oxide (Si00
) has been newly discovered to lower the sintering temperature, reduce dielectric loss, and significantly increase resistivity.
以下本発明を実施例により詳細に説明する。The present invention will be explained in detail below using examples.
出発原料として、酸化鉛（ＰｂＯ）、酸化鉄（Ｆｅ。ｏ
０）、酸化ニオブ（Ｎｉ）、Ｏ、）、酸化マグネシウム
（ＭｇＯ）、酸化タンタル（Ｔａ２Ｏ５）および酸化ケ
イ素（ＳｉＯ２）を使用し、第 表に示した配合比に秤
量する。次いで、これをボールミル中で湿式混合した後
温度７００℃〜８５０℃で予焼を行なつた。この粉末を
粉砕した後、約Ｏ、７を０ｎ／ＣＦ１ｆの圧力で直径約
１６ｍＲ）厚さ約ｌｏＴｌｒＲの円柱に加圧成型した後
、約９４０℃〜１００００Ｃで焼結した。この焼結体を
約Ｏ、５ｗＲの円板に切断した後、表裏面に銀電極を焼
付けた。このようにして得られた磁器組成物の諸特性を
第 表に示す。As starting materials, lead oxide (PbO), iron oxide (Fe.
0), niobium oxide (Ni), O,), magnesium oxide (MgO), tantalum oxide (Ta2O5), and silicon oxide (SiO2) are used and weighed to the compounding ratio shown in Table 1. Next, this was wet-mixed in a ball mill, and then pre-baked at a temperature of 700°C to 850°C. After pulverizing this powder, about O.7 was pressure-molded into a cylinder with a diameter of about 16 mR) and a thickness of about loTlrR at a pressure of 0n/CF1f, and then sintered at about 940°C to 10000C. This sintered body was cut into disks of about O and 5wR, and silver electrodes were baked on the front and back surfaces. The properties of the porcelain composition thus obtained are shown in Table 1.
ここで誘電率および誘電損失は周波数１ｋＨｚ１温度２
０℃で測定した。比抵抗は直流５００■を印加して温度
２０℃で測定した。第 表によつて明らかなように、副
成分として酸化ケイ素（ＳｌＯ２）を含有せしめること
により誘電損失を小さくし、しかも比抵抗を著しく高め
、かつ高誘電率を保持している。以上、本発明により低
温で焼成でき、かつ量産性に優れた高誘電率磁器組成物
を提供することができる効果がある。Here, the dielectric constant and dielectric loss are frequency 1 kHz 1 temperature 2
Measured at 0°C. The specific resistance was measured at a temperature of 20° C. by applying a direct current of 500 μm. As is clear from Table 1, by containing silicon oxide (SlO2) as a subcomponent, the dielectric loss is reduced, the specific resistance is significantly increased, and a high dielectric constant is maintained. As described above, the present invention has the effect of providing a high dielectric constant ceramic composition that can be fired at low temperatures and has excellent mass productivity.
特に安価な大容量積層コンデンサ用材料に適したもので
ある。なお、主成分の煕合比ｘが２５モル％以下では誘
電率が４９００と低く、９９％以上では焼成温度が１０
００℃と高く実用的ではない。It is particularly suitable as an inexpensive material for large-capacity multilayer capacitors. Note that when the mixing ratio x of the main components is 25 mol% or less, the dielectric constant is as low as 4900, and when it is 99% or more, the sintering temperature is 10
00°C, which is not practical.
また、副成分である酸化ケイ素（ＳｉＱ，）が０．００
５重量％未満では誘電損失や比抵抗の改善効果が小さく
０．５重量％を越えると誘電率の低下が著しくなる。In addition, silicon oxide (SiQ,), which is a subcomponent, is 0.00
If it is less than 5% by weight, the effect of improving dielectric loss and resistivity will be small, and if it exceeds 0.5% by weight, the dielectric constant will drop significantly.
Claims (1)
３およびマグネシウムタンタル酸鉛Ｐｂ（Ｍｇ１／３Ｔ
ａ２／３）Ｏ＿３からなる二成分組成物をＰｂ（Ｆｅ１
／２Ｎｂ１／２）＿Ｘ（Ｍｇ１／３Ｔａ２／３）＿１＿
−＿ＸＯ＿３とあらわしたとき配合比Ｘが０．２５≦Ｘ
≦０．９９の範囲内にある主成分組成物に副成分として
酸化ケイ素（ＳｉＯ＿２）を０．００５重量％以上０．
５重量％以下を含有せしめたことを特徴とする高誘電率
磁器組成物。1 Iron/lead niobate Pb (Fe1/2Nb1/2)O_
3 and magnesium lead tantalate Pb (Mg1/3T
a2/3) Pb(Fe1
/2Nb1/2)_X(Mg1/3Ta2/3)_1_
- When expressed as _XO_3, the blending ratio X is 0.25≦X
0.005% by weight or more of silicon oxide (SiO_2) as a subcomponent is added to the main component composition within the range of ≦0.99.
A high dielectric constant ceramic composition containing 5% by weight or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56026506A JPS6054262B2 (en) | 1981-02-25 | 1981-02-25 | High dielectric constant porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56026506A JPS6054262B2 (en) | 1981-02-25 | 1981-02-25 | High dielectric constant porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57140369A JPS57140369A (en) | 1982-08-30 |
| JPS6054262B2 true JPS6054262B2 (en) | 1985-11-29 |
Family
ID=12195361
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56026506A Expired JPS6054262B2 (en) | 1981-02-25 | 1981-02-25 | High dielectric constant porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6054262B2 (en) |
-
1981
- 1981-02-25 JP JP56026506A patent/JPS6054262B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57140369A (en) | 1982-08-30 |
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