JPS6055924B2 - High dielectric constant porcelain composition - Google Patents
High dielectric constant porcelain compositionInfo
- Publication number
- JPS6055924B2 JPS6055924B2 JP57118959A JP11895982A JPS6055924B2 JP S6055924 B2 JPS6055924 B2 JP S6055924B2 JP 57118959 A JP57118959 A JP 57118959A JP 11895982 A JP11895982 A JP 11895982A JP S6055924 B2 JPS6055924 B2 JP S6055924B2
- Authority
- JP
- Japan
- Prior art keywords
- dielectric constant
- high dielectric
- parts
- weight
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Description
【発明の詳細な説明】
本発明はチタン酸バリウム(BaTiO0)を主体とし
、チタン酸カルシウム(CaTiO3)、三二酸化アン
チモン(Si)、Os)に酸化サマリウム(Sm2O8
)等を添加して得られる高誘電率磁器組成物に関するも
のである。Detailed Description of the Invention The present invention is based on barium titanate (BaTiO0), calcium titanate (CaTiO3), antimony sesquioxide (Si), and samarium oxide (Sm2O8).
), etc., and relates to a high dielectric constant ceramic composition obtained by adding such materials.
従来より、チタン酸バリウムを主体とする高誘電体磁器
組成物は数多く提案され、特に円板型磁器コンデンサに
使用されている。Conventionally, many high dielectric ceramic compositions containing barium titanate as a main ingredient have been proposed, and are particularly used in disk-type ceramic capacitors.
チタン酸バリウムは強誘電性を有する材料であり、その
キューリー点は120℃付近にある。Barium titanate is a ferroelectric material, and its Curie point is around 120°C.
この120℃を境にして低温側では正方晶、高温側では
立方晶になる。そして、正方晶の領域では常誘電性を示
すことはよく知られている。このようなチタン酸バリウ
ム単独での磁器の誘電率は常温付近の温度特性において
極めて温度による変化が大きく誘電損失も大きいため、
単独でコンデンサとして使用されることはほとんどなく
、従来から種々の添加物を加えてキューリー点を常温付
近に移動さて、また温度変化を少なくする工夫がなされ
ている。この代表的なものとして、CaTiO、、Ba
ZrO39SrTiへ、Basno39casno3等
が知られている。これらを適量添加し、さらに微量成分
により補正することにより、EIA規格に基づくX7R
、X引゛、Y5V、Z4V等の特性材料として供給され
ている。これらの材料については従来一般に素子厚みが
0.5〜1.0wgnと厚い円板の磁器コンデンサとし
て利用されているのが実状である。近年、各種エレクト
ロニクス関係部品の小型化が進歩しており、積層セラミ
ックコンデンサについてはその最たるものである。At 120°C, it becomes a tetragonal crystal on the low temperature side and a cubic crystal on the high temperature side. It is well known that tetragonal crystals exhibit paraelectricity. The dielectric constant of barium titanate alone in porcelain exhibits extremely large temperature-dependent changes in its temperature characteristics near room temperature, and the dielectric loss is large.
It is rarely used alone as a capacitor, and conventional efforts have been made to add various additives to move the Curie point to around room temperature and to reduce temperature changes. Typical examples include CaTiO, Ba
ZrO39SrTi, Basno39casno3, etc. are known. By adding appropriate amounts of these and further correcting with trace components, X7R based on EIA standards
, XD, Y5V, Z4V, etc. are supplied as characteristic materials. The reality is that these materials have conventionally been used as thick disc ceramic capacitors with an element thickness of 0.5 to 1.0 wgn. In recent years, the miniaturization of various electronics-related components has progressed, and the most notable example is the multilayer ceramic capacitor.
積層セラミックコンデンサは磁器誘電体を25〜100
p771、程度に薄膜化し、クシ型電極を挾んだ多層構
造をなすものであり、電極面積及ひ電極間距離の比率を
極めて小さくすることが可能なため、体積当りの容量が
磁器コンデンサに比して100倍以上も大きくすること
ができ、同一静電容量を1ハ0以下と小さい体積・で確
保できるため、非常に小型化が容易である。しカルなが
ら、このような磁器誘電体薄膜を使用した場合、従来の
円板型の磁器組成がすぐに適用できないのが実状である
。すなわち、単位長さ当りの電圧が従来のm倍以上負荷
されていること・になるため、磁器誘電率及び誘電損失
の電圧依存性の小さい材料が要求されるに至つた。また
、最近プリント基板への直付け方式により、プリント基
板のたわみにより破壊しないような強度を持つた材料が
要求されている。Multilayer ceramic capacitors contain 25 to 100 porcelain dielectrics.
p771, it has a multilayer structure with comb-shaped electrodes sandwiched in between, and the ratio of electrode area and distance between electrodes can be made extremely small, so the capacitance per volume is comparable to that of a ceramic capacitor. The capacitance can be increased by more than 100 times, and the same capacitance can be secured in a small volume of less than 1×0, making it extremely easy to downsize. However, when such a porcelain dielectric thin film is used, the actual situation is that the conventional disk-shaped porcelain composition cannot be immediately applied. In other words, since the voltage per unit length is m times or more higher than that of the conventional material, there has been a demand for materials whose porcelain permittivity and dielectric loss are less dependent on voltage. In addition, recently, due to the direct attachment method to a printed circuit board, there is a demand for a material that has strength so that it will not break due to the deflection of the printed circuit board.
さらに、周波数が感度のよい高周波帯へ移行してきてい
るため、高周波特性のよいものが必要となつてきている
。特に、JIS規格でYD特性あるいはEIA規格でY
5T特性のものが電子チューナ関係に多数必要とされて
おり、誘電率が8000以上、Tanδが2.0%以下
で1〜100MHzの周波数帯で等価値列抵抗の低いも
のが要求されている。Furthermore, since the frequency is shifting to a high frequency band with good sensitivity, there is a need for a device with good high frequency characteristics. In particular, YD characteristics in JIS standards or YD characteristics in EIA standards.
A large number of 5T characteristics are required for electronic tuners, and a dielectric constant of 8000 or more, Tan δ of 2.0% or less, and a low equivalent series resistance in the frequency band of 1 to 100 MHz are required.
本発明は上記に鑑みて電圧依存性が小さく、曲け強度が
大きく、しかも高周波特性の良好な高誘電率磁器組成物
の提供を目的とするものである。In view of the above, an object of the present invention is to provide a high dielectric constant ceramic composition that has low voltage dependence, high bending strength, and good high frequency characteristics.
本発明は、この目的を達成するため種々実験を重ねた結
果、BaTiO3lOO重量部に対して、CaTlO3
l〜10重量部、S■031〜4重量部、Sm2O3l
〜5重量部を添加させてなる高誘電率磁器組成物を提供
するに至つたものである。さらに、好適な実施態様とし
ては、Mn,Cr,Fe,Ni,COの酸化物のうち少
なくとも一種を主成分に対し0.01〜0.5Wt%含
有させてなる高誘電率磁器組成物を提供するものである
。以下、実施例に基づき本発明を説明する。As a result of various experiments to achieve this object, the present invention has revealed that CaTlO3 is
l~10 parts by weight, S■031~4 parts by weight, Sm2O3l
The present invention has led to the provision of a high dielectric constant ceramic composition in which 5 parts by weight of the above-mentioned compound is added. Furthermore, a preferred embodiment provides a high dielectric constant ceramic composition containing 0.01 to 0.5 Wt% of at least one of oxides of Mn, Cr, Fe, Ni, and CO based on the main component. It is something to do. The present invention will be explained below based on Examples.
実施例
BaTiO3(純度部%)10喧量部に対して、各種添
加物を加えてボールミルにて十分に混合する。Example Various additives were added to 10 parts of BaTiO3 (purity %) and thoroughly mixed in a ball mill.
この混合物に5%PVA(ポリビニルアルコール)水溶
液を少量添加してらいかい機で混合し、30メッシュの
ふるいを通過させ造粒する。この造粒粉を137mの内
径の金型で圧力1t0n/alをかけ直・径13醒、厚
さ0.5Tfmの形状の成型体を作製する。これらの成
型体を1250〜1400′Cで1〜2時間焼成する。
この後、円板の焼結体の両円面に銀電極を設ける。下記
の第1表は各種添加物組成に対して得られた焼結体の特
性を示す。A small amount of 5% PVA (polyvinyl alcohol) aqueous solution is added to this mixture, mixed in a sieve machine, passed through a 30 mesh sieve, and granulated. This granulated powder is applied with a pressure of 1 ton/al in a mold with an inner diameter of 137 m to produce a molded body having a diameter of 13 mm and a thickness of 0.5 Tfm. These molded bodies are fired at 1250-1400'C for 1-2 hours.
After this, silver electrodes are provided on both circular surfaces of the sintered body of the disk. Table 1 below shows the properties of the sintered bodies obtained for various additive compositions.
表中ε25は25℃で1KHz..AC1Vにて測定し
た静電容量より求めた誘電率、Tanδはこのときの誘
電損失を示す。また、1.RはDC5OVで測定した絶
縁抵抗率、B.D.Vは昇圧破壊電圧、AC−Vは実効
値のAC電圧下で1KHzにて測定したTanδの値を
示す。さらに、冗は20℃を基準とした静電容量の−3
0℃及び85℃における変化率を示す。この第1表から
も明らかなように本発明の組成物は誘電率が大きく、A
C電圧による容量変化が小さく、また曲げ強度が強いこ
とが認められる。従来、BazrO3やBasnO3あ
るいはSrTiO3等を添加した組成ではAC電圧特性
が50■/Tfn下のTanδ値にして3〜7%程度と
高く、曲げ強度も600〜700k9/C7lfと低か
つたことからすると極めて良好結果と考えられる。第1
表の試料NOl3の組生物を使用し、第1図のような積
層セラミックコンデンサを試作し、特性を調べた結果を
下記の第2表に示す。In the table, ε25 is 1KHz at 25℃. .. The dielectric constant, Tan δ, determined from the capacitance measured at AC1V indicates the dielectric loss at this time. Also, 1. R is insulation resistivity measured at DC5OV, B. D. V indicates the boost breakdown voltage, and AC-V indicates the value of Tan δ measured at 1 KHz under the effective AC voltage. Furthermore, the redundancy is -3 of the capacitance based on 20℃.
The rate of change at 0°C and 85°C is shown. As is clear from Table 1, the composition of the present invention has a large dielectric constant, and
It is recognized that the capacitance change due to C voltage is small and the bending strength is strong. Conventionally, compositions containing BazrO3, BasnO3, SrTiO3, etc. had high AC voltage characteristics of about 3 to 7% in terms of Tan δ value under 50■/Tfn, and bending strength was low at 600 to 700k9/C7lf. This is considered to be an extremely good result. 1st
A multilayer ceramic capacitor as shown in FIG. 1 was prototyped using the composition of sample No. 3 shown in the table, and the characteristics were investigated. The results are shown in Table 2 below.
第2表はBaTiO3lOO重量部に対してBazrO
3を3重量部、MgTlO3を0.4重量部、MnO2
を0.2重量部添加してなる従来の代表的な組成物を用
いて試作したコンデンサの特性を合せて示している。こ
の場合の素体形状は3.07×1.56×0.56wr
mである。Table 2 shows BazrO to parts by weight of BaTiO3lOO.
3 parts by weight of 3, 0.4 parts by weight of MgTlO3, MnO2
It also shows the characteristics of a capacitor prototyped using a typical conventional composition containing 0.2 parts by weight of . In this case, the element shape is 3.07 x 1.56 x 0.56wr
It is m.
尚、第1図において、1は試料NO.l3の組成物から
なる磁器誘電体、2はパラジウム電極、3は端子電極(
Ag電極)てある。また、第2表てCおよびTanδは
1KHz..AC1Vで測定した値である。1.Reは
DC5O■にて測定した絶縁抵抗値、B.D.Veは昇
圧破壊電圧値である。In addition, in FIG. 1, 1 is sample No. 2 is a palladium electrode, 3 is a terminal electrode (
Ag electrode). Also, in Table 2, C and Tanδ are 1KHz. .. This is a value measured at AC1V. 1. Re is the insulation resistance value measured at DC5O■, B. D. Ve is a boosted breakdown voltage value.
また、抗折力は2.5Twtのスパンで素体を支持し、
素体中央部を0.5顛刃巾のナイフで押えたときの素子
破壊直前の圧力である。第2図はこの場合における等価
直列抵抗の周波数特性を示す。In addition, the transverse rupture force supports the element body with a span of 2.5Twt,
This is the pressure just before the element breaks when the central part of the element is pressed with a knife with a blade width of 0.5. FIG. 2 shows the frequency characteristics of the equivalent series resistance in this case.
従来組成によるコンデンサの特性Aに比して、本発明の
試料NO.l3で試作したコンデンサの特性Bは極めて
高周波領域の特性が良いことが明らかである。また、第
3図は同じく本発明で試作したコンデンサの静電容量の
温度変化率を示す。以上、述べたように本発明の組成は
積層セラミックコンデンサのような薄膜状の誘電体とし
て良好な特徴を有する。Compared to the characteristic A of the capacitor with the conventional composition, the sample No. of the present invention. It is clear that the characteristic B of the capacitor prototyped in 13 has extremely good characteristics in the high frequency region. FIG. 3 also shows the rate of change in capacitance with temperature of a capacitor prototyped according to the present invention. As described above, the composition of the present invention has favorable characteristics as a thin film dielectric such as a multilayer ceramic capacitor.
すなわち、誘電率3000以上の高誘電率を有し、電圧
依存性が小さく高周波において等価直列抵抗が小さいと
いつた点で最近の市場ニーズに合致する組成であり、特
に電子チユーlナ等の領域において極めて利用価値の高
いものてある。In other words, it has a high dielectric constant of 3000 or more, low voltage dependence, and low equivalent series resistance at high frequencies, making it a composition that meets recent market needs, and is particularly suitable for areas such as electronic tuners. There are some things that have extremely high utility value.
【図面の簡単な説明】
第1図は本発明の組成物を用いて試作した積層セラミッ
クコンデンサを示す一部断面正面図、第・2図は同セラ
ミックコンデンサにおける等価直列抵抗の周波数特性を
示す図、第3図は同じく静電容量の温度変化を示す図で
ある。
1・・・・・・磁器誘電体、2・・・・・・パラジウム
電極、3・・・・・・端子電極。[Brief Description of the Drawings] Fig. 1 is a partial cross-sectional front view showing a multilayer ceramic capacitor prototyped using the composition of the present invention, and Fig. 2 is a diagram showing the frequency characteristics of the equivalent series resistance in the same ceramic capacitor. , FIG. 3 is a diagram similarly showing the change in capacitance with temperature. 1... Ceramic dielectric, 2... Palladium electrode, 3... Terminal electrode.
Claims (1)
_31〜10重量部、Sb_2O_31〜4重量部、S
m_2O_31〜5重量部を添加させてなる高誘電率磁
器組成物。 2 Mn、Cr、Fe、Ni、Coの酸化物のうち少な
くとも一種を主成分に対して0.01〜0.5wt%含
有させてなる特許請求の範囲第1項記載の高誘電率磁器
組成物。[Claims] 1 Based on 100 parts by weight of BaTiO_3, CaTiO
_31-10 parts by weight, Sb_2O_31-4 parts by weight, S
A high dielectric constant ceramic composition containing 1 to 5 parts by weight of m_2O_3. 2. The high dielectric constant ceramic composition according to claim 1, which contains 0.01 to 0.5 wt% of at least one of oxides of Mn, Cr, Fe, Ni, and Co based on the main component. .
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57118959A JPS6055924B2 (en) | 1982-07-07 | 1982-07-07 | High dielectric constant porcelain composition |
| DE19833390046 DE3390046C2 (en) | 1982-06-18 | 1983-06-17 | Ceramic composition with high dielectric constant |
| PCT/JP1983/000194 WO1984000076A1 (en) | 1982-06-18 | 1983-06-17 | Porcelain composition with high dielectric constant |
| US06/582,570 US4558021A (en) | 1982-06-18 | 1983-06-17 | Ceramic high dielectric composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57118959A JPS6055924B2 (en) | 1982-07-07 | 1982-07-07 | High dielectric constant porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS599806A JPS599806A (en) | 1984-01-19 |
| JPS6055924B2 true JPS6055924B2 (en) | 1985-12-07 |
Family
ID=14749506
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57118959A Expired JPS6055924B2 (en) | 1982-06-18 | 1982-07-07 | High dielectric constant porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6055924B2 (en) |
-
1982
- 1982-07-07 JP JP57118959A patent/JPS6055924B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS599806A (en) | 1984-01-19 |
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