JPS6055964B2 - Manufacturing method of thermistor - Google Patents
Manufacturing method of thermistorInfo
- Publication number
- JPS6055964B2 JPS6055964B2 JP10941580A JP10941580A JPS6055964B2 JP S6055964 B2 JPS6055964 B2 JP S6055964B2 JP 10941580 A JP10941580 A JP 10941580A JP 10941580 A JP10941580 A JP 10941580A JP S6055964 B2 JPS6055964 B2 JP S6055964B2
- Authority
- JP
- Japan
- Prior art keywords
- thermistor
- manufacturing
- glass frit
- electrode material
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title description 4
- 239000011521 glass Substances 0.000 description 6
- 239000007772 electrode material Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000011572 manganese Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910018487 Ni—Cr Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011656 manganese carbonate Substances 0.000 description 1
- 235000006748 manganese carbonate Nutrition 0.000 description 1
- 229910000016 manganese(II) carbonate Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Description
【発明の詳細な説明】
本発明は、マンガン（Ｍｎ）−ニッケル（Ｎｉ）スピ
ネルにクロム（Ｃｒ）を固溶させた焼結性の甘いサーミ
スタ用酸化物半導体素子に、酸化物ビスマス（Ｂｉ。DETAILED DESCRIPTION OF THE INVENTION The present invention includes bismuth oxide (Bi) in a sinterable oxide semiconductor element for a thermistor in which chromium (Cr) is dissolved in manganese (Mn)-nickel (Ni) spinel as a solid solution.
Ｏ０）をガラスフリット中に多量に含む電極材料を用い
て構成されるサーミスタの製造方法に関するものてある
。 従来、Ｍｎ−Ｎｉ−Ｃｒ系の３成分系酸化物半導体
は公知（雑誌’’電気化学’’Ｖｏｌ、１９、１９５１
年９月）であり、また汎用サーミスタの電極には銀ある
いは銀−パラジウム系で、ガラスフリット中にＢｉ。ｏ
。が含まれているのは良く知られている。 本発明は、
このＭｎ−Ｎｉ−Ｃｒの焼結性の甘いサーミスタに、ガ
ラスフリット中にＢｉ２Ｏａを多量に含む電極材料を用
いることにより、素子界面下数１０〜１００１ＬｒｒＬ
内にバルクよりも焼結性の悪いスポンジ層が形成される
が、このスポンジ層を利用することにより素子抵抗値が
調整できることを見出したことによる。 本発明のサー
ミスタ組成は、金属元素としてＭｎ９０〜５５原子％、
Ｎｉ５〜３０原子％、クロム５〜３０原子％の３種を含
有し、これらの合計が１００原子％である。The present invention relates to a method for manufacturing a thermistor constructed using an electrode material containing a large amount of O0) in a glass frit. Conventionally, Mn-Ni-Cr ternary oxide semiconductors have been known (Magazine ``Electrochemistry'' Vol. 19, 1951).
(September, 2013), and the electrodes of general-purpose thermistors are made of silver or silver-palladium, and Bi is used in the glass frit. o
. It is well known that it contains The present invention
By using an electrode material containing a large amount of Bi2Oa in the glass frit for this Mn-Ni-Cr thermistor with easy sinterability, it is possible to
Although a sponge layer with worse sinterability than the bulk is formed inside the material, it has been discovered that the element resistance value can be adjusted by using this sponge layer. The composition of the thermistor of the present invention includes 90 to 55 atomic% of Mn as a metal element;
It contains 5 to 30 atom % of Ni and 5 to 30 atom % of chromium, the total of which is 100 atom %.
ここで、それぞれの含有量の限定理由は既に市販されて
いる汎用サーミスタの特性（比抵抗１０Ω・ Ｃｍ−−
ＩＭ・Ω・α、Ｂ定数１０００〜６０００’に）による
ものである。 以下、実施例を挙げて本発明方法を説明
する。Here, the reason for limiting each content is the characteristics of general-purpose thermistors already on the market (specific resistance 10Ω・Cm--
IM・Ω・α, B constant 1000 to 6000'). The method of the present invention will be explained below with reference to Examples.
まず、市販のＭｎＣＯ３、ＮｉＯ、Ｃｒ２Ｏ３を、Ｍｎ
：・ Ｎｉ：Ｃｒ■８５：７．５：７．５原子％の組成
になるように配合した。ついで、サーミスタ製造工程を
例示すると、これらの配合組成物をボールミルで湿式混
合し、これらのスラリーを乾燥後、８００℃の温度で仮
焼しこれらの仮焼物をボールミルで湿式粉砕混合を行つ
た。こうして得られたスラリーを乾燥し、ポリビニルア
ルコールをバインダーとして添加混合し、所要量採つて
円板状に加圧成形して成形品を多数作り、これらを空気
中、１２５０゜Ｃの温度で２時間焼結させた。その後、
これらの円板状焼結体の両面にＢｉ。Ｏａをガラスフリ
ット主成分とし、Ａｇを主成分とする電極材料を焼付け
てオーミック接触を得た。この素子の断面を金属顕微鏡
で観察したところ、素子と電極界面下２０μｍのところ
にスポンジ層が確認され、電極の厚みを変化させるとこ
ろのスポンジ層が変化し特性も変化することが判つた。
また、このスポンジ層は種々解析した結果、組成中のＭ
ｎとガラスフリット中のＢｉ。０３との反応によること
が判つた。First, commercially available MnCO3, NiO, and Cr2O3 were mixed with Mn
:・Ni:Cr■85:7.5:7.5 atomic % was blended. Next, to illustrate the thermistor manufacturing process, these blended compositions were wet mixed in a ball mill, the slurry was dried and then calcined at a temperature of 800°C, and the calcined product was wet-pulverized and mixed in a ball mill. The slurry thus obtained is dried, polyvinyl alcohol is added and mixed as a binder, the required amount is taken and pressure molded into disk shapes to make many molded products, and these are heated in air at a temperature of 1250°C for 2 hours. Sintered. after that,
Bi on both sides of these disc-shaped sintered bodies. Ohmic contact was obtained by baking an electrode material containing Oa as the main component of the glass frit and Ag as the main component. When the cross section of this element was observed with a metallurgical microscope, a sponge layer was confirmed 20 μm below the interface between the element and the electrode, and it was found that the sponge layer, which changes the thickness of the electrode, changes and the characteristics also change.
In addition, as a result of various analyzes of this sponge layer, it was found that M in the composition
n and Bi in the glass frit. It was found that this was due to the reaction with 03.
そこで、この組成の素子を用いて電極厚みを変えた場合
、またガラスフリット中のＢｉ２Ｏ３濃度を変化させた
場合の特性値を下記の表に示す。この表に示すように電
極材料として与えるＢｉ２Ｏ３量を変えることによつて
容易に特性を変化させることができる。Therefore, the table below shows the characteristic values when using an element with this composition and changing the electrode thickness and when changing the Bi2O3 concentration in the glass frit. As shown in this table, the characteristics can be easily changed by changing the amount of Bi2O3 provided as the electrode material.
以上のように本発明は、同一材料組成でも電極材料して
与えるＢｊ２Ｏ３量を製造させることにより、容易に初
期特性を変え得る点て融通性があり、差業性は大なるも
のがある。As described above, the present invention is flexible in that the initial characteristics can be easily changed by manufacturing the amount of Bj2O3 provided as the electrode material even if the material composition is the same, and there is a great difference in merit.
Claims (1)
してマンガン９０〜５５原子％、ニッケル５〜３０原子
％、クロム５〜３０原子％を含有し、これら３種の金属
元素を総合計１００原子％含有するサーミスタ用酸化物
半導体素子に、Ｂｉ＿２Ｏ＿３をガラスフリット主成分
とする電極材料を用い、そのＢｉ＿２Ｏ＿３濃度および
厚みで素子抵抗をコントロールすることを特徴とするサ
ーミスタの製造方法。1 A sintered mixture of metal oxides containing 90 to 55 at% of manganese, 5 to 30 at% of nickel, and 5 to 30 at% of chromium as the metal elements, and containing these three metal elements in a total of 100 at. A method for manufacturing a thermistor, characterized in that an electrode material containing Bi_2O_3 as a main component of a glass frit is used in an oxide semiconductor element for thermistor containing % of Bi_2O_3, and element resistance is controlled by the Bi_2O_3 concentration and thickness.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10941580A JPS6055964B2 (en) | 1980-08-09 | 1980-08-09 | Manufacturing method of thermistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10941580A JPS6055964B2 (en) | 1980-08-09 | 1980-08-09 | Manufacturing method of thermistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5734307A JPS5734307A (en) | 1982-02-24 |
| JPS6055964B2 true JPS6055964B2 (en) | 1985-12-07 |
Family
ID=14509661
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10941580A Expired JPS6055964B2 (en) | 1980-08-09 | 1980-08-09 | Manufacturing method of thermistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6055964B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6254098A (en) * | 1985-09-02 | 1987-03-09 | Tateyama Alum Ind Co Ltd | Color electrodeposition coating method for aluminum or aluminum alloy |
-
1980
- 1980-08-09 JP JP10941580A patent/JPS6055964B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5734307A (en) | 1982-02-24 |
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