JPS6056314B2 - Pressure/vibration-electrical conversion device - Google Patents
Pressure/vibration-electrical conversion deviceInfo
- Publication number
- JPS6056314B2 JPS6056314B2 JP14852177A JP14852177A JPS6056314B2 JP S6056314 B2 JPS6056314 B2 JP S6056314B2 JP 14852177 A JP14852177 A JP 14852177A JP 14852177 A JP14852177 A JP 14852177A JP S6056314 B2 JPS6056314 B2 JP S6056314B2
- Authority
- JP
- Japan
- Prior art keywords
- diaphragm
- pressure
- vibration
- metal film
- strain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Description
【発明の詳細な説明】
本発明は圧力・振動−電気変換装置に関するものであ
り、圧力とさらに振動や加速度等を同時に又は各々単独
に検知することができる装置である。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a pressure/vibration-to-electrical conversion device, and is a device that can detect pressure, vibration, acceleration, etc. simultaneously or individually.
従来、振動や加速度等を検知するのに一般的に用いら
れている構造としては、先端部に受感質量を持つた片持
粱又は中央部に受惑質量を持つた両方固定粱等に歪ゲー
ジを形成したものがあるが、その構造、電極の取り出し
はめんどうでコストがかかり、さらに自動車等に装着す
る検出器は温度、圧力、位置等を検出する必要もあり狭
い限られた空間に配置しなければならず、大きさやコス
トの面で問題があつた。Conventionally, the structures commonly used to detect vibrations, acceleration, etc. are a cantilever with a sensitive mass at the tip or a double-sided fixed pole with a sensitive mass in the center, etc. There are gauges, but the structure and electrode removal are troublesome and costly, and detectors installed in cars etc. need to detect temperature, pressure, position, etc., so they are placed in small confined spaces. However, there were problems in terms of size and cost.
本発明は上記の問題点を解決するためのものであり、
装置の小型化、低コスト化を可能とすると共に、受感質
量要素をダイアフラム上に簡単かつ自在に設定可能な圧
力・振動−電気変換装置を提供することを目的とする。The present invention is intended to solve the above problems,
It is an object of the present invention to provide a pressure/vibration-to-electrical conversion device that allows the device to be made smaller and lower in cost, and in which a sensitive mass element can be easily and freely set on a diaphragm.
そのため、本発明では、被測定圧力に応動する薄肉状
のダイアフラム部及び肉厚状の支持体とが一体に形成さ
れたシリコン基板と、前記ダイアフラム部の一主面に形
成された感歪素子と、前記ダイアフラム部の一主面の実
質的に中央部分に形成された所定パターン状の第1の金
属膜と、前記ダイアフラム部の一主面と同一主面側の前
記支持体上に形成され、前記感歪素子からの信号を外部
に取出す外部取出用電極となる第2の金属膜と、前記第
1、第2の金属膜上に形成された半田層とを有し、前記
第1の金属膜及び前記第1の金属膜上に形成された半田
層によつて前記ダイアフラム部自身の振動に応動する受
惑質量要素が構成され、被測定圧力及び前記ダイアフラ
ム自身の振動を同一の前記惑歪素子にて検出する構成と
したことを特徴とする。 次に本発明をよりよく理解す
るために図に示す単結晶シリコンをダイアフラムに使用
した一実施例を用いて具体的に説明する。Therefore, in the present invention, a silicon substrate in which a thin-walled diaphragm portion that responds to the pressure to be measured and a thick-walled support body are integrally formed, and a strain-sensitive element formed on one principal surface of the diaphragm portion; , a first metal film having a predetermined pattern formed substantially in the center of one main surface of the diaphragm part, and a first metal film formed on the support body on the same main surface side as the one main surface of the diaphragm part, a second metal film serving as an external extraction electrode for extracting a signal from the strain-sensitive element to the outside; and a solder layer formed on the first and second metal films; The membrane and the solder layer formed on the first metal membrane constitute a receiving mass element that responds to the vibrations of the diaphragm itself, and the pressure to be measured and the vibrations of the diaphragm itself are combined with the same electromagnetic distortion. It is characterized by having a configuration in which detection is performed using an element. Next, in order to better understand the present invention, a concrete explanation will be given using an example in which the diaphragm is made of single crystal silicon as shown in the drawings.
ます第1図、第2図は平面図および側面断面図であり、
1は絶縁体基台で、単結晶シリコンとほぼ等しい熱膨脹
係数を有するたとえば結晶化ガラス等から成り、この絶
縁体基台1には所定の大きさの貫通孔2が形成してある
。3は導体層、4は第1接着部で、これらはスクリーン
印刷等の手法によりたとえば銀一白金系又は銀パラジウ
ム等の導体ペーストを用いて形成してあり、また5は絶
縁体部で、所定の部所及びハンダ層6を形成した部所以
外の区域にガラス等の絶縁物で形成されてなる。Figures 1 and 2 are a plan view and a side sectional view,
Reference numeral 1 denotes an insulator base made of, for example, crystallized glass having a coefficient of thermal expansion substantially equal to that of single crystal silicon, and a through hole 2 of a predetermined size is formed in the insulator base 1. 3 is a conductor layer, 4 is a first adhesive part, these are formed using a conductor paste such as silver-platinum or silver-palladium by a method such as screen printing, and 5 is an insulator part, which is formed by a method such as screen printing, etc. It is made of an insulating material such as glass in areas other than the parts and the part where the solder layer 6 is formed.
またハンダ層6はこの絶縁体部5で覆われなかつた導体
層3及び第1接着部4のみに形成してある。次に第3図
、第4図は前記絶縁体基台1に取付けるダイアフラムチ
ップを示すものであり、このダイアフラムチップにはた
とえば0.6〜1.5ΩαのN型(100)面単結晶シ
リコン基板7にP型であるボロンを拡散して歪ゲージ8
が形成してあり、各歪ゲージ8は同一の結晶軸方向に対
称に配置されている。Further, the solder layer 6 is formed only on the conductor layer 3 and the first bonding section 4 that are not covered with the insulator section 5. Next, FIGS. 3 and 4 show a diaphragm chip that is attached to the insulator base 1, and this diaphragm chip has an N-type (100) single crystal silicon substrate of 0.6 to 1.5 Ωα, for example. Diffusion of P-type boron into strain gauge 8
are formed, and each strain gauge 8 is arranged symmetrically in the same crystal axis direction.
また9は絶縁体層、10は薄肉状ダイアフラムで、各歪
ゲージ8に被測定圧力に応じて応力歪を与えるために薄
肉のダイアフラム状にしたものであり、熱酸化膜をマス
クとしてKOH液にてエッチング形成される。そして1
0aがダイアフラム10の支持体を構成する。また絶縁
体層9上にはダイアフラム部10の直径よりも大きな直
径の第2接着部11、歪ケージ8の信号を外部に取出す
ための取出し電極12、及び印加される振動を検知増幅
するための受感質量部13がA1一Cr−Cu,Cr−
Cu等の各金属の蒸着、メッキにより形成されており、
第2接着部11、外部取出し電極12、及び受感質量部
13にハンダ層14を形成したものである。また本実施
例では歪ゲージ8から外部取出し電極12までの配線は
ボロンの高濃度拡散層15でおこなつた。これはA1蒸
着による配線でもよい。次に第5図に示すものは、ハン
ダ層6を形成し.た前記絶縁基台1を熱板上に置いてこ
のハンダ層6を溶かし、その後ハンダ層14を形成した
ダイアフラムチップをなす前記単結晶シリコン基板7を
絶縁体基台1上に載置する事により、第1接着部4と第
2接着部11とを、その両ハンダ層6,・14のハンダ
を接着剤として気密性をもたせて接着支持するとともに
、歪ゲージ8への電気的接続をおこなうために導体層3
上のハンダ層6と外部取出し電極12も同様にハンダ層
6,14でもつて同時に接続する事により所望の圧力・
振動一電気変換装置を構成したものである。Further, 9 is an insulating layer, and 10 is a thin-walled diaphragm, which is shaped like a thin diaphragm in order to apply stress strain to each strain gauge 8 according to the pressure to be measured. It is formed by etching. and 1
0a constitutes a support body of the diaphragm 10. Further, on the insulator layer 9, there are a second adhesive part 11 having a diameter larger than the diameter of the diaphragm part 10, an extraction electrode 12 for extracting the signal of the strain cage 8 to the outside, and a second adhesive part 12 for detecting and amplifying applied vibrations. Sensitive mass part 13 is A1-Cr-Cu, Cr-
It is formed by vapor deposition and plating of various metals such as Cu,
A solder layer 14 is formed on the second bonding part 11, the external electrode 12, and the sensitive mass part 13. Further, in this embodiment, the wiring from the strain gauge 8 to the external electrode 12 was formed using a high concentration diffusion layer 15 of boron. This may be wiring by A1 vapor deposition. Next, in the case shown in FIG. 5, a solder layer 6 is formed. By placing the insulating base 1 on a hot plate to melt the solder layer 6, and then placing the single crystal silicon substrate 7 forming the diaphragm chip on which the solder layer 14 is formed, on the insulating base 1. , in order to adhesively support the first adhesive part 4 and the second adhesive part 11 using the solder of both solder layers 6, 14 as an adhesive to provide airtightness, and to electrically connect to the strain gauge 8. conductor layer 3
Similarly, the upper solder layer 6 and the externally drawn electrode 12 are connected at the same time using the solder layers 6 and 14 to achieve the desired pressure.
This is a vibration-electric conversion device.
なお、第5図では圧力導入用バイブ101を接着したも
のであるが、絶縁体基台1をつくる時に一体に形成して
もよい。In FIG. 5, the pressure introducing vibrator 101 is bonded, but it may be formed integrally when the insulator base 1 is made.
また102は複数本の外部用導線を示している。このよ
うにして作製した本発明の変換装置をたとえば自動車に
おける検出器として使用した場合、バイブ101にたと
えばインテークマニホールド圧力を導入する事によりJ
圧力を測定するとともに、この変換装置を車体に取り付
ければ車体の振動を、あるいはエンジン本体に取り付け
ればエンジン本体の振動を同時に出力として取り出す事
が出来る。第6図は第5図に示す変換装置による出力波
形である。Further, 102 indicates a plurality of external conducting wires. When the converter of the present invention manufactured in this way is used as a detector in an automobile, for example, by introducing intake manifold pressure into the vibrator 101,
In addition to measuring pressure, if this converter is attached to the car body, the vibrations of the car body can be output, or if it is attached to the engine body, the vibrations of the engine body can be output at the same time. FIG. 6 shows the output waveform of the converter shown in FIG.
図中出力ΔV1は圧力変化による出力分、及びΔV2は
振動の大きさであり、振動周期tを測定する事により振
動の周波数を検出する事が出来る。又本変換装置は圧力
のみ又は振動のみの単独の検出器として使用出来るだけ
でなく、受感質量部13の質量を変える事により同時に
精度の高い広い範囲にわたる加速度計として使用する事
が出来るのはいうまでもない。第7図A,B,Cは圧力
変化による成分ΔV1と振動成分V2を分離した様子を
示すものである。In the figure, the output ΔV1 is the output due to pressure change, and ΔV2 is the magnitude of vibration, and the frequency of vibration can be detected by measuring the vibration period t. Moreover, this converter can not only be used as a stand-alone pressure-only or vibration-only detector, but by changing the mass of the sensitive mass section 13, it can also be used as an accelerometer with high accuracy over a wide range. Needless to say. FIGS. 7A, B, and C show how the component ΔV1 due to pressure change and the vibration component V2 are separated.
第7図Aは検出回路ブロック、第7図Bは圧力波形、第
7図Cは振動波形を夫々示す図である。このように本発
明装置を自動車のエンジンコントロールに応用した場合
、エンジンへの供給空気量を表わすインテークマニホー
ルド圧力の変化は非常に周波数の低いものであり、一方
エンジンでの爆発によるエンジン本体の振動は非常に高
い周波数成分で構成されている。7A is a detection circuit block, FIG. 7B is a pressure waveform, and FIG. 7C is a diagram showing a vibration waveform. In this way, when the device of the present invention is applied to automobile engine control, changes in the intake manifold pressure, which represents the amount of air supplied to the engine, have a very low frequency, while vibrations in the engine body due to explosions in the engine It consists of very high frequency components.
本発明の圧力・振動−電気変換装置における出力波形(
第6図)は大きなうねりの圧力成分、大きなうねりに重
なつた高周波からなる振動成分よりなつている。ここで
エンジンの爆発状態の異常、たとえばノッキング等が発
生した場合高周波の振動成分での変化があられれてくる
。この力と振動の合成された出力波形等をコンピュータ
ーで処理する事により、点火時期、燃料供給量等の調整
の信号を形成する事ができる。なお、本発明は拡散によ
る歪ゲージに限らず蒸着薄膜、金属ストレンゲージやそ
の他の感歪素子をダイアフラム上に形成したものすべて
に適用できる事はいうまでもない。Output waveform (
Figure 6) consists of a pressure component of large undulations and a vibration component consisting of high frequency waves superimposed on the large undulations. If an abnormality in the engine's explosive state, such as knocking, occurs, a change in high frequency vibration components will occur. By processing the combined output waveform of this force and vibration with a computer, it is possible to form signals for adjusting ignition timing, fuel supply amount, etc. It goes without saying that the present invention is applicable not only to strain gauges formed by diffusion, but also to any type of strain-sensitive element formed on a diaphragm, such as vapor-deposited thin films, metal strain gauges, and other strain-sensitive elements.
又使用するシリコン結晶面は(100)面にかぎらない
。また受感質量部13はダイアフラム10の中央部やそ
の近傍に形成するのが適当であるが別段これは限定され
ない。また受惑質量の増加は第3図、4図における受感
質量部13のハンダ層14におもりを接着する事によつ
ても出来る。また受感質量部はダイアフラムの両面に形
成してもよいし、複数個に分割してもよい。さらに絶縁
体基台1上には信号処理、増幅回路等を装着してもよい
。以上述べたように本発明では、被測定圧力に応じてダ
イアフラム部が変形し、かつ支持体より伝わるダイアフ
ラム部自身の振動を受感質量部要素にて増幅してダイア
フラム部を変形させることができ、それにより同一の感
歪素子でもつて被測定圧力と同時に振動変化分を加味し
た合成出力を得ることができるようになり、しかも、受
感質量要素を、所定パターン状の第1の金属膜とこの膜
上の半田層との組合せによつてダイアフラム部上に簡単
かつ自在に設定可能となり、そのため装置を小型かつ低
コストに提供可能となる。Further, the silicon crystal plane used is not limited to the (100) plane. Further, it is appropriate that the sensitive mass portion 13 be formed at or near the center of the diaphragm 10, but this is not particularly limited. The sensitive mass can also be increased by attaching a weight to the solder layer 14 of the sensitive mass section 13 in FIGS. 3 and 4. Further, the sensitive mass portion may be formed on both sides of the diaphragm, or may be divided into a plurality of pieces. Further, a signal processing circuit, an amplifier circuit, etc. may be mounted on the insulator base 1. As described above, in the present invention, the diaphragm part deforms in accordance with the pressure to be measured, and the vibration of the diaphragm part itself transmitted from the support can be amplified by the sensitive mass element to deform the diaphragm part. As a result, even with the same strain-sensitive element, it is possible to obtain a composite output that takes into account both the pressure to be measured and the vibration change.Moreover, the sensitive mass element is combined with the first metal film in a predetermined pattern. In combination with the solder layer on this film, it can be easily and freely set on the diaphragm part, and therefore the device can be provided in a small size and at low cost.
第1図、第2図は本発明変換装置に用いる絶縁体基台の
一実施例を示す平面図、及び側面断面図、第3図、第4
図は本発明装置に用いるタイアフラムチップの一実施例
を示す平面図、及び側面断面図、第5図は本発明装置の
一実施例の全体構造を示す側面断面図、第6図は本発明
装置における一実施例装置の出力波形図、第7図A,B
,Cは本発明装置の検出出力を処理する一方法を示す説
明図である。
8・・・・・・惑歪素子をなす歪ゲージ、10・・・・
・・薄肉状ダイアフラム、10a・・・・・・支持体、
13,201・・・・・・受感質量要素をなす受感質量
部。1 and 2 are a plan view and a side sectional view showing an embodiment of an insulator base used in the conversion device of the present invention, and FIGS. 3 and 4.
The figure is a plan view and side sectional view showing an embodiment of the tire phragm chip used in the device of the present invention, FIG. 5 is a side sectional view showing the overall structure of an embodiment of the device of the present invention, and FIG. Output waveform diagram of an example device in the device, FIG. 7A, B
, C is an explanatory diagram showing one method of processing the detection output of the device of the present invention. 8... Strain gauge forming a perplexing strain element, 10...
...Thin-walled diaphragm, 10a...Support,
13,201... Sensitive mass portion forming a sensitive mass element.
Claims (1)
肉厚状の支持体とが一体に形成されたシリコン基板と、
前記ダイアフラム部の一部主面に形成された感歪素子と
、前記ダイアフラム部の一主面の実質的に中央部分に形
成された所定パターン状の第1の金属膜と、前記ダイア
フラム部の一主面と同一主面側の前記支持体上に形成さ
れ、前記感歪素子からの信号を外部に取出す外部取出用
電極となる第2の金属膜と、前記第1、第2の金属膜上
に形成された半田層とを有し、前記第1の金属膜及び前
記第1の金属膜上に形成された半田層によつて前記ダイ
アフラム部自身の振動に応動する受感質量要素が構成さ
れ、被測定圧力及び前記ダイアフラム自身の振動を同一
の前記感歪素子にて検出する構成としたことを特徴とす
る圧力・振動−電気変換装置。1. A silicon substrate integrally formed with a thin-walled diaphragm portion that responds to the pressure to be measured and a thick-walled support body;
A strain-sensitive element formed on a part of the main surface of the diaphragm part, a first metal film in a predetermined pattern formed substantially in the center of one main face of the diaphragm part, and a first metal film formed on a part of the main surface of the diaphragm part. a second metal film formed on the support on the same main surface side as the main surface and serving as an external extraction electrode for extracting a signal from the strain-sensitive element to the outside; the first metal film and the solder layer formed on the first metal film constitute a sensitive mass element that responds to vibrations of the diaphragm itself. A pressure/vibration-to-electrical conversion device, characterized in that the pressure to be measured and the vibration of the diaphragm itself are detected by the same strain-sensitive element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14852177A JPS6056314B2 (en) | 1977-12-09 | 1977-12-09 | Pressure/vibration-electrical conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14852177A JPS6056314B2 (en) | 1977-12-09 | 1977-12-09 | Pressure/vibration-electrical conversion device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5480690A JPS5480690A (en) | 1979-06-27 |
| JPS6056314B2 true JPS6056314B2 (en) | 1985-12-09 |
Family
ID=15454627
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14852177A Expired JPS6056314B2 (en) | 1977-12-09 | 1977-12-09 | Pressure/vibration-electrical conversion device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6056314B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0369423U (en) * | 1989-11-10 | 1991-07-10 | ||
| JP2008076183A (en) * | 2006-09-20 | 2008-04-03 | Denso Corp | Flow measurement element, mass flow meter, and mass flow measurement system |
-
1977
- 1977-12-09 JP JP14852177A patent/JPS6056314B2/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0369423U (en) * | 1989-11-10 | 1991-07-10 | ||
| JP2008076183A (en) * | 2006-09-20 | 2008-04-03 | Denso Corp | Flow measurement element, mass flow meter, and mass flow measurement system |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5480690A (en) | 1979-06-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5477738A (en) | Multi-function differential pressure sensor with thin stationary base | |
| US7152485B2 (en) | Acceleration detector | |
| US5811693A (en) | Force detector and acceleration detector and method of manufacturing the same | |
| JP3079983B2 (en) | Semiconductor combustion pressure sensor | |
| US6247369B1 (en) | Multi-channel electronically scanned cryogenic pressure sensor and method for making same | |
| US5932809A (en) | Sensor with silicon strain gage | |
| JPH09292409A (en) | Acceleration sensor | |
| JPS6056314B2 (en) | Pressure/vibration-electrical conversion device | |
| JP3328575B2 (en) | Acceleration sensor element, acceleration sensor, and manufacturing method thereof | |
| JPH11271352A (en) | Acceleration sensor element, acceleration sensor, and manufacturing method thereof | |
| JPH0677052B2 (en) | Magnetic detection device | |
| US20040237650A1 (en) | Capacitive acceleration sensor | |
| JPH07128365A (en) | Semiconductor acceleration sensor and manufacturing method thereof | |
| JP2624311B2 (en) | Semiconductor sensor | |
| JP2596759B2 (en) | Force detection device | |
| JP2001041969A (en) | Method for manufacturing piezoelectric sensor and piezoelectric sensor | |
| JPH03214064A (en) | Acceleration sensor | |
| JP2624315B2 (en) | Semiconductor sensor | |
| JP2602300B2 (en) | Semiconductor sensor | |
| JPH07103838A (en) | Micro pressure sensor | |
| Crescini et al. | Piezoresistive accelerometers for vehicle dynamics: A new solution in thick-film technology on AISI430 metal substrate | |
| JPH051961A (en) | Barometric pressure sensor | |
| JPS6157826A (en) | Pressure transducer | |
| JPH04295770A (en) | Acceleration sensor of piezoelectric type | |
| JPH11258085A (en) | Composite sensor |