JPS6057163B2 - High permittivity porcelain dielectric composition - Google Patents
High permittivity porcelain dielectric compositionInfo
- Publication number
- JPS6057163B2 JPS6057163B2 JP56092849A JP9284981A JPS6057163B2 JP S6057163 B2 JPS6057163 B2 JP S6057163B2 JP 56092849 A JP56092849 A JP 56092849A JP 9284981 A JP9284981 A JP 9284981A JP S6057163 B2 JPS6057163 B2 JP S6057163B2
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- JP
- Japan
- Prior art keywords
- dielectric constant
- purity
- temperature
- dielectric
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
Description
【発明の詳細な説明】
本発明は高誘電率磁器誘電体組成物に係り、特に誘電率
が著しく高く、しかも誘電率の温度変化率の小さい、積
層コンデンサ用として好適な磁器誘電体組成物に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a ceramic dielectric composition with a high dielectric constant, and particularly to a ceramic dielectric composition which has an extremely high dielectric constant and a small rate of change in dielectric constant with temperature, and is suitable for use in multilayer capacitors. It is something.
従来、平担な誘電率温度特性を有する磁器誘電体として
は、チタン酸バリウム(BaTi0a)および酸化ビス
マス(B1。Conventionally, barium titanate (BaTi0a) and bismuth oxide (B1.
O0)を主成分とし、これに酸化スズ(SnO2)また
は酸化チタン(TiO2)あるいは酸化ジルコニウム(
ZrO2)を添加してものがあるが、何れも−30℃か
ら+85℃の温度範囲において誘電率の温度変化率を±
10%以内にすると、誘電率が2000以下と低くなり
、また誘電率が2000景上のものではその誘電率の温
度変化率は上記温度範囲において±10%を越えるもの
しか得られなかつた。一方、かかる問題を解消する磁器
誘電体組成物として、BaTiO3及びBi。The main component is tin oxide (SnO2), titanium oxide (TiO2), or zirconium oxide (
ZrO2) is added, but all of them have a temperature change rate of ±30°C in the temperature range of -30°C to +85°C.
When it is within 10%, the dielectric constant becomes as low as 2,000 or less, and in the case of a dielectric constant on the order of 2,000, the temperature change rate of the dielectric constant can only exceed ±10% in the above temperature range. On the other hand, BaTiO3 and Bi are used as porcelain dielectric compositions that solve this problem.
へに、Nb2qと、CeO。またはし。00とを加え、
これによつて±10%以内の誘電率温度変化率て、しか
も3000〜3500の誘電率を達成するものが、特公
昭55−2140冴公報に明らかにされている。Heni, Nb2q, and CeO. Orshi. Add 00 and
A device which achieves a dielectric constant temperature change rate within ±10% and a dielectric constant of 3000 to 3500 is disclosed in Japanese Patent Publication No. 55-2140 Sae.
しカルながら、かかる組成物中に含まれるBi203が
、積層コンデンサを作る場合において、高い焼成温度が
採用されると、蒸発せしめられ、それによつて電極を傷
める問題があり、それ故B1。03の如き成分を含む組
成物は、積層コンデンサ用としては不適当なものであつ
たのである。However, there is a problem that the Bi203 contained in such compositions will evaporate if high firing temperatures are employed in making multilayer capacitors, thereby damaging the electrodes, and therefore the B1.03. Compositions containing such components were unsuitable for use in multilayer capacitors.
本発明は、かかる事情を背景にして為されたものであつ
て、その目的とするところは、平担な誘電率温度特性を
有し、しかも高誘電率である、積層コンデンサ用として
好適な磁器誘電体を提供することにある。The present invention has been made against the background of such circumstances, and its object is to provide a porcelain material suitable for use in multilayer capacitors, which has flat dielectric constant temperature characteristics and also has a high dielectric constant. The objective is to provide a dielectric material.
而して、本発明に係る高誘電率磁器誘電体組成物は、純
度が99%以上の炭酸バリウム(BaCO3)と純度が
99%以上の酸化チタン(TiO0)から形成される高
純度のBaT10095〜99%と、酸化コバルト (
C0003)0.05〜0.5%と、酸化ニオブ(Nb
、0、)0.5〜2%と、酸化セリウム(Ce02)0
.05〜0.5%と、TIO。Therefore, the high permittivity ceramic dielectric composition according to the present invention is made of high purity BaT10095-- which is formed from barium carbonate (BaCO3) with a purity of 99% or more and titanium oxide (TiO0) with a purity of 99% or more. 99% and cobalt oxide (
C0003) 0.05-0.5% and niobium oxide (Nb
,0,)0.5-2% and cerium oxide (Ce02)0
.. 05-0.5% and TIO.
の1.5%までとからなるものである(いずれも百分率
は重量基準であ”る)。かくの如き本発明に従う組成の
磁器誘電体組成物によれば、平担な誘電率温度特性が達
成され、特に−30℃から+80℃の温度範囲内におい
て+25゜C(7)誘電率を基準としたときその誘電率
の温度変・化率が±10%以内であるものが容易に得ら
れるのであり、しかも同時にその誘電率も容易に300
0以上と為し得るのである。(all percentages are based on weight).The porcelain dielectric composition according to the present invention has a flat dielectric constant temperature characteristic. In particular, it is easy to obtain a dielectric constant whose temperature change rate is within ±10% when the dielectric constant is referenced to +25°C (7) within the temperature range of -30°C to +80°C. Moreover, at the same time, its dielectric constant can easily be 300.
It can be made greater than 0.
また、かかる本発明に従う、焼成して得られる磁器誘電
体組成物にあつては、B1。Moreover, in the case of the porcelain dielectric composition obtained by firing according to the present invention, B1.
03、円゜等の蒸発成分を含有していないために、高温
の焼成温度が採用されても電極を傷めるようなことは全
くなく、それ故積層コンデンサ用として好適に用いられ
得るものである。Since it does not contain any evaporative components such as 0.03 or yen, it does not damage the electrodes at all even if a high firing temperature is used, and therefore it can be suitably used for multilayer capacitors.
なお、本発明において、先ず、高純度の
BaTlO3を95〜9踵量%、好ましくは97〜9踵
量%の割合で組成物中に配合せしめる必要があり、その
配合割合が多過ぎたり、少な過ぎたりすると、誘電率か
著しく低下したり、誘電率の温度変化が著しくなる等の
問題を生じる。In addition, in the present invention, it is first necessary to blend high-purity BaTlO3 into the composition at a ratio of 95 to 9% by weight, preferably 97 to 9% by weight; If the temperature is too high, problems such as a significant decrease in the dielectric constant or a significant change in the dielectric constant with temperature will occur.
そして、この高純度のBaTlO3は、従来のBaTi
O3が97〜部%程度のBacO3と?〜99%程度の
TiO2を用いて形成されているのに対して、それぞれ
純度が99%以上、好ましくは99.5%以上の、高度
に精製されたBacO3とTiO2を用いて形成される
ものであつて、このような高純度の出発原料を用いて初
めて高純度のBaTiO3が得られるのである。また、
本発明に係る組成物を構成するCO2O3とNbl.O
5は、何れも誘電率の褐度変化率を平担化せしめる成分
であり、CO2O3は0.05〜0.5%、好ましくは
0.09〜0.4%;Nb2O5は0.5〜2%、好ま
しくは0.9〜1.5%(いずれも重量基準)の割合に
て配合せしめられる必要がある。なお、CO2O3が、
0.05%より少なくなると、誘電率の温度変化率が大
となり、0.5%より多くなると、誘電率が低くなる。
また、Nb2O.が、0.5%より少ないときには焼結
不良の問題が惹起され、他方2%より多いときには誘電
率の温度変化率が大きくなる問題を生じる。更に、本発
明の組成物中のCeO2は焼成温度を低下せしめる効果
があるが、その割合が0.05%よりも少ないと焼結不
良となり、また0.5%よりも多くなると誘電率の温度
変化率が大となる。This high-purity BaTlO3 can be made from conventional BaTi
BacO3 with O3 of about 97%? It is formed using highly purified BacO3 and TiO2, each having a purity of 99% or more, preferably 99.5% or more. High purity BaTiO3 can only be obtained by using such a high purity starting material. Also,
CO2O3 and Nbl. O
5 is a component that flattens the rate of change in brownness of dielectric constant; CO2O3 is 0.05 to 0.5%, preferably 0.09 to 0.4%; Nb2O5 is 0.5 to 2%. %, preferably 0.9 to 1.5% (both based on weight). In addition, CO2O3 is
If it is less than 0.05%, the temperature change rate of the dielectric constant becomes large, and if it is more than 0.5%, the dielectric constant becomes low.
Also, Nb2O. However, when it is less than 0.5%, the problem of poor sintering occurs, and on the other hand, when it is more than 2%, there is a problem that the temperature change rate of the dielectric constant becomes large. Furthermore, CeO2 in the composition of the present invention has the effect of lowering the sintering temperature, but if its proportion is less than 0.05%, sintering will be poor, and if it exceeds 0.5%, the temperature of the dielectric constant will decrease. The rate of change is large.
それ故、CeO2の割合は、0.05〜0.5重量%、
好ましくは0.09〜0.踵量%とする必要がある。更
にまた、TlO2は、CeO2と同様に焼成温度の低下
に寄与するものであるが、その割合が多過ぎると誘電率
を低下せしめたり、誘電損失(Tanδ)を大きくする
ので、1.5重量%までの含有割合とする必要があり、
なかでも0.2〜1.濾量%の割合で含有せしめること
により、その有効な効果が発揮される。なお、このTi
O2量は、前記高純度のBaTiO3の形成に際して過
剰のTiO2をBacO3と組み合わせることによつて
導入され得るものである他、必要な量のTiO2を別途
に組成物中に配合せしめることによつても導入せしめら
れ得るものである。このように、本発明は、特定のBa
TiO3と、CO2O3,Nb2O.,CeO2,Ti
O2との所定割合で磁器誘電体を構成せしめることによ
り、前述した如き数々の優れた特徴を発揮し得たのであ
る。Therefore, the proportion of CeO2 is 0.05-0.5% by weight,
Preferably 0.09-0. It needs to be the heel volume%. Furthermore, like CeO2, TlO2 contributes to lowering the firing temperature, but if its proportion is too large, it lowers the dielectric constant and increases dielectric loss (Tanδ), so TlO2 is added at 1.5% by weight. It is necessary to make the content ratio up to
Among them, 0.2 to 1. By containing it in the proportion of filtration rate, its effective effect is exhibited. Furthermore, this Ti
The amount of O2 can be introduced by combining excess TiO2 with BacO3 when forming the high-purity BaTiO3, or by separately incorporating the required amount of TiO2 into the composition. It can be introduced. Thus, the present invention provides a specific Ba
TiO3, CO2O3, Nb2O. ,CeO2,Ti
By configuring the porcelain dielectric material in a predetermined ratio with O2, it was possible to exhibit the many excellent characteristics described above.
以下に実施例を挙げ、本発明を更に具体的に明らかにす
るが、本発明がかかる実施例の記載によつて何等の制約
をも受けるものでないことは言うまでもないところであ
る。なお、実施例中の部及び百分率はすべて重量基準で
示されている。実施例第1表に示される配合割合となる
ように各成分原料をボールミルにて均一に湿式混合せし
め、ついで900〜1100℃で3時間の間仮焼して化
学反応を行なわしめた後、再びボールミルにて平均粒径
が1ミクロン程度になるまで粉砕した。Examples will be given below to clarify the present invention more specifically, but it goes without saying that the present invention is not limited in any way by the description of these Examples. Note that all parts and percentages in the examples are expressed on a weight basis. Examples The raw materials for each component were wet-mixed uniformly in a ball mill so that the proportions shown in Table 1 were obtained, and then calcined at 900 to 1100°C for 3 hours to carry out a chemical reaction, and then mixed again. It was ground in a ball mill until the average particle size was about 1 micron.
なお、高純度BaTiO3成分を形成するために、純度
が99.5%のBacO3と純度が99.9%のTiO
,が用゛いられ、他の成分と共に、前記ボールミルにて
湿式混合せしめられた。ついで、この混合物を乾燥せし
めた後、粘結剤としてポリビニルアルコールを適当量加
え、約1トン/dの圧力にて成形し、直径16m/Tr
l.、厚さ0.5m/Wl,の円板状成形物を作製した
。In addition, in order to form a high purity BaTiO3 component, BacO3 with a purity of 99.5% and TiO with a purity of 99.9% are used.
, was used and wet mixed with other ingredients in the ball mill. Next, after drying this mixture, an appropriate amount of polyvinyl alcohol was added as a binder, and it was molded at a pressure of about 1 ton/d to a diameter of 16 m/Tr.
l. A disc-shaped molded product with a thickness of 0.5 m/Wl was produced.
さらに、かくして得られた成形物に対して、約1350
〜1400℃の温度で、3時間の本焼成操作を施した後
、得られた焼成物についてその両面に銀電極を焼き付け
ることにより試料と為し、ついで300C@間、試料厚
さ1顛当り1■V印加の寿命試験を行なつた後、それぞ
れの電気的諸特性を測定してその結果を第2表に示した
。第1表及び第2表の結果より明らかなように、本発明
に従う組成の組成物は、いずれも高い、即ち3000以
上の誘電率εを有し、且つ小誘電損失(Sinδ)のも
のであると共に、誘電率の温度に対する変化率の小さな
特性をも具備しているのである。Furthermore, about 1350
After performing the main firing operation for 3 hours at a temperature of ~1400°C, the obtained fired product was made into a sample by baking silver electrodes on both sides, and then heated at 300°C @ 1% per sample thickness. (2) After conducting a life test by applying V, various electrical characteristics of each were measured and the results are shown in Table 2. As is clear from the results in Tables 1 and 2, all of the compositions according to the present invention have a high dielectric constant ε of 3000 or more and a small dielectric loss (Sin δ). At the same time, it also has the property of having a small rate of change in dielectric constant with respect to temperature.
これに対し、試料NO.2と略同様な組成を有する、通
常品質のBacO3及びTiO2を出発原料とした組成
物からは、約3000の誘電率εのものしか得られず、
本発明に従う試料NO.2の誘電率ε:4055に比し
て著しく劣るものであつた。On the other hand, sample No. A composition starting from normal quality BacO3 and TiO2 having a composition substantially similar to that of 2 can only be obtained with a dielectric constant ε of about 3000,
Sample No. according to the invention. The dielectric constant ε of No. 2 was significantly inferior to 4055.
また、CO2O3,Nb2O.,ceO2及びTiO2
を含まない、単に高純度のBaTiO3のみからなるも
のは、誘電率Eが2400、誘電損失(Tanδ)が3
.屯+85℃及び一300Cでの変化率がそれぞれ−1
9.8%、−32%であつて、本発明に係る組成物に比
して著しく劣つたものであつた。Also, CO2O3, Nb2O. , ceO2 and TiO2
The one consisting only of high-purity BaTiO3, which does not contain
.. The rate of change at +85℃ and -300C is -1 respectively.
9.8% and -32%, which was significantly inferior to the composition according to the present invention.
Claims (1)
上の酸化チタンから形成される高純度のチタン酸バリウ
ム95〜99%と、酸化コバルト0.05〜0.5%と
、酸化ニオブ0.5〜2%と、酸化セリウム0.05〜
0.5%と、酸化チタンの1.5%までとからなる高誘
電率磁器誘電体組成物。1 95-99% of high-purity barium titanate formed from barium carbonate with a purity of 99% or more and titanium oxide with a purity of 99% or more, 0.05-0.5% of cobalt oxide, and 0.0% of niobium oxide. 5~2% and cerium oxide 0.05~
0.5% of titanium oxide and up to 1.5% of titanium oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56092849A JPS6057163B2 (en) | 1981-06-16 | 1981-06-16 | High permittivity porcelain dielectric composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56092849A JPS6057163B2 (en) | 1981-06-16 | 1981-06-16 | High permittivity porcelain dielectric composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57208003A JPS57208003A (en) | 1982-12-21 |
| JPS6057163B2 true JPS6057163B2 (en) | 1985-12-13 |
Family
ID=14065869
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56092849A Expired JPS6057163B2 (en) | 1981-06-16 | 1981-06-16 | High permittivity porcelain dielectric composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6057163B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0192779B1 (en) * | 1984-09-03 | 1991-10-23 | Nippon Telegraph and Telephone Corporation | Perovskite-type ceramic material and a process for producing the same |
| JPS61275164A (en) * | 1985-05-03 | 1986-12-05 | タム セラミツクス インコ−ポレイテツド | Dielectric ceramic composition having high permittivity and flat tc properties |
| DE3775855D1 (en) * | 1986-08-11 | 1992-02-20 | Tdk Corp | CERAMIC SEMICONDUCTOR COMPOSITION. |
| DE4220681C2 (en) * | 1991-06-27 | 1995-09-14 | Murata Manufacturing Co | Non-reducing, dielectric, ceramic composition |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5110814A (en) * | 1974-07-11 | 1976-01-28 | Tdk Electronics Co Ltd | |
| JPS5548406A (en) * | 1978-09-30 | 1980-04-07 | Nippon Steel Corp | Production of chrome plating steel sheet with excellent weldability |
| JPS5548405A (en) * | 1978-10-04 | 1980-04-07 | Nippon Steel Corp | Rolling method of metallic plate |
-
1981
- 1981-06-16 JP JP56092849A patent/JPS6057163B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57208003A (en) | 1982-12-21 |
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