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JPS606544B2 - Manufacturing method for airtight terminals - Google Patents
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JPS606544B2 - Manufacturing method for airtight terminals - Google Patents

Manufacturing method for airtight terminals

Info

Publication number
JPS606544B2
JPS606544B2 JP54125180A JP12518079A JPS606544B2 JP S606544 B2 JPS606544 B2 JP S606544B2 JP 54125180 A JP54125180 A JP 54125180A JP 12518079 A JP12518079 A JP 12518079A JP S606544 B2 JPS606544 B2 JP S606544B2
Authority
JP
Japan
Prior art keywords
glass
terminal
eyelet
stem
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54125180A
Other languages
Japanese (ja)
Other versions
JPS5648159A (en
Inventor
孝一 薦田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Home Electronics Ltd
Original Assignee
NEC Home Electronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Home Electronics Ltd filed Critical NEC Home Electronics Ltd
Priority to JP54125180A priority Critical patent/JPS606544B2/en
Publication of JPS5648159A publication Critical patent/JPS5648159A/en
Publication of JPS606544B2 publication Critical patent/JPS606544B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/60Seals

Landscapes

  • Connections Arranged To Contact A Plurality Of Conductors (AREA)

Description

【発明の詳細な説明】 m 発明の利用分野 この発明は気密端子の製造方法に関し、特に鉄製のアィ
レツトにガラスを介してリード線を気密絶縁的に封着し
てなるガラス端子を、銅製のベースにロゥ付けしてなる
気密端子、例えば半導体装置用ステムまたは水晶振動子
用ステムの製造方法に関する。
[Detailed Description of the Invention] m Field of Application of the Invention The present invention relates to a method for manufacturing an airtight terminal, and in particular, a glass terminal in which a lead wire is hermetically and insulatively sealed to an iron eyelet through glass, and a copper base. The present invention relates to a method of manufacturing an airtight terminal, such as a stem for a semiconductor device or a stem for a crystal resonator, which is brazed to the stem.

‘2} 従来の技術 中電力用のパワートランジスタの容器として用いられる
ステムは、例えば第1図に示す構造を有する。
'2} In the prior art, a stem used as a container for a power transistor for electric power has a structure shown in FIG. 1, for example.

図において、1はガラス端子で、鉄製のアィレツト2の
中にガラス3を介してリード線4を気密絶縁的に封着し
て製作される。5は銅製のベース、すなわちステム基板
で、略菱形状を呈し、長手方向の両端にシャーシ等への
取付孔6を有し、中心部から偏心した位置にガラス端子
固着用の透孔7を有し、さらに前記透孔7を園綾して凹
溝8を有する。
In the figure, reference numeral 1 denotes a glass terminal, which is manufactured by sealing a lead wire 4 in an iron eyelet 2 through a glass 3 in an airtight and insulating manner. Reference numeral 5 denotes a base made of copper, that is, a stem board, which is approximately diamond-shaped and has mounting holes 6 at both ends in the longitudinal direction for attaching to a chassis, etc., and a through hole 7 for fixing a glass terminal at a position eccentric from the center. Furthermore, the through hole 7 is provided with a concave groove 8.

9は凹溝8内に鉄合固着された鉄製のキャップ溶接用リ
ングである。上述の構造のステムは従来次のようにして
製造されている。
Reference numeral 9 denotes an iron cap welding ring which is fixed in the groove 8 with iron alloy. The stem having the above structure has conventionally been manufactured as follows.

まず、第3図に示すように、アィレット2の全面に厚さ
が3〜7一程度の電気ニッケルメッキ層10を形成し、
アィレット2とガラスタブレットとりード線4とを封着
治具を用いて所定の関係位置に組み立て、約1000o
oに加熱してガラスタブレットを溶融せしめてガラス端
子1を製作する。次に、このガラス端子1をステム基板
5の透孔7に競合し、かしめ加工してガラス端子1を仮
固定するとともに、凹溝8に溶接用リング9を配置し、
アィレット1の外周および溶接用リング9の外周に銀ロ
ウを配置し中性雰囲気中で約78000に加熱して銀o
ウを溶融させてアィレット2および溶接用リング9と、
ステム基板5とをロウ付けしていた。しかしながら、上
述の製造方法によれば、次のような問題点があった。
First, as shown in FIG. 3, an electrolytic nickel plating layer 10 having a thickness of about 3 to 71 mm is formed on the entire surface of the eyelet 2.
Assemble the eyelet 2 and the lead wire 4 to the glass tablet in a predetermined relationship position using a sealing jig, and
A glass terminal 1 is manufactured by heating the glass tablet to a temperature of 100°C to melt it. Next, this glass terminal 1 is inserted into the through hole 7 of the stem board 5 and caulked to temporarily fix the glass terminal 1, and a welding ring 9 is placed in the groove 8.
Silver solder is placed around the outer periphery of the eyelet 1 and the outer periphery of the welding ring 9, and heated to about 78,000 ℃ in a neutral atmosphere.
The eyelet 2 and the welding ring 9 are made by melting the c.
The stem board 5 was brazed. However, the above manufacturing method has the following problems.

A 急熱試験でリーク不良発生が多い。A: Many leak failures occur during rapid heating tests.

B アイレット2の表面にニッケルメッキ層10が形成
されており、銅製のステム基板5と表面材質が異なるた
め、そのま)仕上げメッキを施すと、ニッケルメッキ層
10上のメッキ付着が不十分となるので、仕上げメッキ
の前処理としてニッケルメッキ層10の活性化が必要に
なる。
B: A nickel plating layer 10 is formed on the surface of the eyelet 2, and the surface material is different from that of the copper stem board 5, so if finish plating is applied immediately, the plating adhesion on the nickel plating layer 10 will be insufficient. Therefore, it is necessary to activate the nickel plating layer 10 as a pretreatment for final plating.

C ニッケルメッキ層1川ょ銀ロウ等の流れ性が良いの
で、溶融したロウ材がガラス3上まで流れて、クラツク
が発生する。
C Nickel plating layer 1 Since silver solder has good flowability, the molten solder material flows to the top of the glass 3, causing cracks.

【3ー この発明の目的 それゆえ、この発明の主たる目的は、上述の問題点のな
い気密端子の製造方法を提供することである。
[3- Purpose of the Invention Therefore, the main purpose of the present invention is to provide a method for manufacturing a hermetic terminal that does not have the above-mentioned problems.

■ この発明の総括的説明 この発明を要約すると、全面に銅〆ッキ層を有するアィ
レットにガラスを介してリード線を気密絶縁的に封着し
てガラス端子を製作し、このガラス端子を銅製のベース
の透孔に嫁合したのち、ガラス端子のアイレツトとべ‐
スとをoウ付けすることを特徴とする。
■ General description of this invention To summarize this invention, a glass terminal is manufactured by sealing a lead wire in an airtight and insulating manner through glass to an eyelet having a copper laminate layer on the entire surface, and this glass terminal is made of copper. After fitting into the through hole of the base of the glass terminal, the eyelet of the glass terminal
It is characterized by adding o and o.

■ 実施例 この発明の上述の目的およびその他の目的と特徴は、図
面を参照して行なう以下の詳細な説明から一層明らかと
なろう。
■ Embodiments The above-mentioned objects and other objects and features of the present invention will become more apparent from the following detailed description with reference to the drawings.

第4図は、第1図および第2図に示す半導体装置用ステ
ムに、この発明を実施する場合の、第3図に対応する要
部の拡大断面図を示す。
FIG. 4 shows an enlarged sectional view of a main part corresponding to FIG. 3 when the present invention is applied to the stem for a semiconductor device shown in FIGS. 1 and 2. FIG.

まず、鉄製のアィレット2の全面に厚さが3〜12仏程
度の銅〆ッキ層11を形成する。また、ソーダバリウム
ガラスまたはソーダライムガラス等を100〜200メ
ッシュ節を通過する程度に粉砕し、カーボワックス(商
品名)等の有機/ゞィンダと共に混練し、スプレードラ
ィャ等により粒径50〜145″に造粒し、円筒状にプ
レス成型し、約500℃に加熱して有機/ゞィンダを焼
き飛ばしてガラスタブレットを製作する。さらに、鉄・
ニッケル合金よりなる長尺の線材を適当な長さに切断し
てリード線4を製作し、必要に応じて酸化処理を施す。
次に、前記アィレット2、ガラスタブレットおよびリー
ド線4をグラフアィト製の封着沿具を用いて所定の関係
位直に組み立て、中性または弱還元性雰囲気中において
約1000℃に加熱し、前記ガラスタブレットを溶融せ
しめて、アイレツト2にガラス3を介してリード線4を
気密絶縁的に封着したガラス端子1を製作するこのガラ
ス端子1を銅製のベースの一例としてのステム基板5の
透孔7に鉄合し、機械的にかしめ加工して、ガラス端子
1とステム基板5とを仮固定する。
First, a copper glazing layer 11 having a thickness of about 3 to 12 squares is formed on the entire surface of the iron eyelet 2. In addition, soda barium glass or soda lime glass is crushed to the extent that it passes through a 100-200 mesh node, kneaded with an organic binder such as Carbowax (trade name), and then reduced to a particle size of 50-145'' using a spray dryer or the like. It is granulated, press-molded into a cylindrical shape, and heated to approximately 500°C to burn off the organic/binder to produce a glass tablet.
Lead wires 4 are manufactured by cutting a long wire made of nickel alloy into appropriate lengths, and are subjected to oxidation treatment if necessary.
Next, the eyelet 2, the glass tablet, and the lead wire 4 are directly assembled in a predetermined relationship using a sealing tool made of graphite, and heated to about 1000° C. in a neutral or weakly reducing atmosphere. A glass terminal 1 is manufactured by melting the tablet and sealing a lead wire 4 to an eyelet 2 through a glass 3 in an airtight and insulating manner. The glass terminal 1 and the stem substrate 5 are temporarily fixed by iron-bonding them and mechanically caulking them.

また、ステム基板5の凹溝8に鉄製の溶接リング9を配
置し、さらにアィレット2のステム基板5からの上面か
ら突出する外周部および溶接用リング9の外周の凹溝8
内に銀。ウ等のロウ材を配置し、中性雰囲気中で約80
0℃に加熱して、アィレツト2および溶接用リング9を
ステム基板5に気密に固着する上述の製造方法によれば
、従来の製造方法に比較して、次のような利点がある。
Further, an iron welding ring 9 is disposed in the groove 8 of the stem board 5, and the groove 8 on the outer periphery of the eyelet 2 protruding from the upper surface of the stem board 5 and the outer periphery of the welding ring 9.
Silver inside. A wax material such as corrugated iron is placed in a neutral atmosphere, and the
According to the above-described manufacturing method in which the airtight 2 and the welding ring 9 are hermetically fixed to the stem substrate 5 by heating to 0° C., there are the following advantages compared to conventional manufacturing methods.

a ガラス3とニッケルメッキ層10との組み合せより
も、ガラス3と銅メツキ層11との組み合せの方が密着
力が優れており、強固な気密封着ができ、ステム基板5
上に半導体素子を半田付けするときの、急熱によるステ
ム基板5の膨脹に伴う透孔7の蓬大化によって、アィレ
ット2の圧縮応力抜けに基因する、アイレット2とガラ
ス3との封着界面からのりーク不良がなくなる。
a The combination of the glass 3 and the copper plating layer 11 has better adhesion than the combination of the glass 3 and the nickel plating layer 10, and a strong airtight seal can be achieved.
The sealing interface between the eyelet 2 and the glass 3 is caused by the release of compressive stress in the eyelet 2 due to the enlargement of the through hole 7 due to the expansion of the stem substrate 5 due to rapid heating when a semiconductor element is soldered thereon. This eliminates leakage defects.

例えばアイレツト2の外内軽比を1.3にしステムを3
30ooに急熱した場合、この発明による銅〆ッキ層1
1を有するガラス端子ではリーク不良が5の固中皆無で
あったのに対し、電気ニッケルメッキ層10を形成した
従来のガラス端子では、50個中1の園のりーク不良が
発生した。b アィレット2の表面に銅〆ッキ層11を
形成したので、アイレット2の表面とステム基板5の表
面が銅で統一され、仕上げメッキ前に従来のニッケルメ
ッキ層10のようなニッケルの活性化処理が不要になる
For example, if the outer/inner/light ratio of eyelet 2 is 1.3 and the stem is 3.
When rapidly heated to 30 oo, the copper glazing layer 1 according to the present invention
In the case of the glass terminal having the nickel plating layer 10, there were no leak defects in the 5 cases, whereas in the conventional glass terminal with the electrolytic nickel plating layer 10 formed, the leak defect occurred in 1 case out of 50. b Since the copper plating layer 11 is formed on the surface of the eyelet 2, the surface of the eyelet 2 and the surface of the stem board 5 are made of copper, and nickel cannot be activated like the conventional nickel plating layer 10 before finishing plating. Processing becomes unnecessary.

c 鋼メッキ層11はニッケルメッキ層10に比較して
、銀ロウ等の溶融ロゥ材が流れ過ぎないので、溶融ロウ
材がガラス3まで流れず、ガラスクラックの発生が防止
できるのみならず、アィレット2とステム基板5との隅
角部に所要量のロウ材が確保されて、信頼性の高いロウ
付けが行なえる。
c Compared to the nickel plating layer 10, the steel plating layer 11 prevents molten brazing material such as silver solder from flowing too much, so the molten brazing material does not flow to the glass 3, which not only prevents the occurrence of glass cracks but also prevents the eyelet from flowing. A required amount of brazing material is secured at the corner portion between the stem substrate 2 and the stem substrate 5, and highly reliable brazing can be performed.

第5図および第6図はこの発明を適用し得る他の半導体
装置用ステムの平面図および断面図を示す。
5 and 6 show a plan view and a sectional view of another stem for a semiconductor device to which the present invention can be applied.

図において、1はガラス端子で、前記第4図と同様に鉄
製のアィレット2の全面に銅〆ッキ層11を形成し、カ
ラム3を介してリード線4が気密絶縁的に封着されてい
る。2川ま銅製のベースの一例としての円形の放熱板で
、中心から偏心した位置に、ガラス端子1の鉄合用の透
孔21が形成されている。
In the figure, reference numeral 1 denotes a glass terminal, in which a copper laminate layer 11 is formed on the entire surface of an iron eyelet 2, as in FIG. There is. This is a circular heat dissipation plate as an example of a base made of copper, and a through hole 21 for the iron fitting of the glass terminal 1 is formed at a position eccentric from the center.

22は鉄製のフランジで、外形が第1図のステム基板5
と同様に略菱形状を呈し、長手方向の両端にシャーシ等
への取付孔23を有し、中央に前記放熱板20を鉄合す
る丸孔24を有する。
22 is an iron flange, the outer shape of which is the same as the stem board 5 in Fig. 1.
Similarly, it has a substantially rhombic shape, and has mounting holes 23 at both ends in the longitudinal direction for attaching to the chassis, etc., and a round hole 24 in the center for fitting the heat dissipation plate 20.

なお、鉄製のフランジ22は、全面に銅〆ッキを施した
のち丸孔24に放熱板20を鉄合し、かしめ加工して仮
固定したうえ、ガラス端子1と放熱板20とのロゥ付け
と同時に、放熱板20とロウ付けする。第7図および第
8図はこの発明を適用し得る他の気密端子としての水晶
振動子用ステムの平面図および断面図を示す。
The entire surface of the iron flange 22 is plated with copper, and then the heat sink 20 is iron-fitted into the round hole 24, temporarily fixed by caulking, and the glass terminal 1 and the heat sink 20 are brazed together. At the same time, the heat sink 20 is brazed. 7 and 8 show a plan view and a sectional view of a stem for a crystal resonator as another airtight terminal to which the present invention can be applied.

図において、3川まガラス端子で、鉄製の長円板伏のア
ィレット31の長手方向の両端に透孔32を有し、全面
に銅〆ッキ層を形成したのち、透孔32にガラス33を
介してリード線34を気密絶縁的に封着したものである
。35は銅製のベースの一例としての舟形状の容器であ
り、前記透孔32と同D状のかつそれよりも若干大きい
径の透孔36を有し、この透孔36にァィレット31の
透孔32の周辺部の突起部が豚合されている。
In the figure, a Mitsukawa glass terminal has through holes 32 at both ends of the longitudinal direction of an eyelet 31 made of an oblong iron plate, and after forming a copper laminate layer on the entire surface, a glass 33 is inserted into the through hole 32. The lead wire 34 is hermetically and insulatively sealed via the . Reference numeral 35 designates a boat-shaped container as an example of a base made of copper, and has a through hole 36 having the same D shape as the through hole 32 and a slightly larger diameter. The protrusions on the periphery of 32 are mated together.

そして、前記アィレット31と容器35とは銀ロゥ等の
ロゥ材で気密にロウ付けされている。上記第5図および
第6図の半導体装置用ステムおよび第7図および第8図
の水晶振動子用ステムにおいても、前記実施例で述べた
と同様の効果が得られる。
The eyelet 31 and the container 35 are hermetically brazed with a soldering material such as silver solder. The same effects as described in the above embodiment can also be obtained in the semiconductor device stems shown in FIGS. 5 and 6 and the crystal resonator stems shown in FIGS. 7 and 8.

なお、この発明は上記の実施例以外の気密端子にも適用
できるのである。
It should be noted that the present invention can also be applied to airtight terminals other than the above-mentioned embodiments.

‘6’まとめ この発明は以上のように、鉄製のアィレットの全面に銅
〆ツキ層を形成し、このアィレツト内にガラスを介して
リード線を気密絶縁的に封着してガラス端子を製作する
工程と、このガラス端子を銅製のベースの透孔に鉄合す
る工程と、前記ガラス端子のアイレツトをベースにロウ
付けする工程とを含むものであるから、従来のアィレッ
ト表面にニッケルメッキ層を形成してガラス封着したガ
ラス端子を用いるものに比較して、急熱によるリーク不
良のない気密端子が得られ、また、仕上げメッキ前のニ
ッケルの活性化処理が不要となり、さらに溶融したロウ
材の流れ過ぎがなくなり、ガラスクラックの発生が防止
できるのみならず、ロウ付け部分に所要量のロウ材が確
保されて、信頼性の高い気密端子が得られるという効果
を奏する。
'6' Summary As described above, this invention produces a glass terminal by forming a copper coating layer on the entire surface of an iron eyelet, and sealing a lead wire in this eyelet in an airtight and insulating manner through glass. The process includes a step of iron-bonding this glass terminal to a through hole in a copper base, and a step of brazing the eyelet of the glass terminal to the base, so it is not necessary to form a nickel plating layer on the surface of the conventional eyelet. Compared to those using glass-sealed glass terminals, it is possible to obtain airtight terminals with no leakage defects due to rapid heating, eliminate the need for nickel activation treatment before final plating, and prevent excessive flow of molten brazing material. This not only prevents the occurrence of glass cracks, but also ensures the required amount of brazing material in the brazed portion, resulting in a highly reliable airtight terminal.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の背景となるかつ同時にこの発明の一
実施例の製造方法が適用される半導体装置用ステムの平
面図、第2図は第1図の0−ロ線に沿う断面図、第3図
は第1図および第2図に示す半導体装置用ステムの従釆
の製造方法を説明するための要部拡大断面図、第4図は
第1図および第2図に示す半導体装置用ステムのこの発
明による製造方法を説明するための第3図に対応する要
部拡大断面図、第5図はこの発明の他の実施例を説明す
るための半導体装置用ステムの平面図、第6図は第5図
のけ−の線に沿う断面図、第7図はこの発明のさらに他
の実施例を説明するための水晶振動子用ステムの平面図
、第8図は第7図の肌一皿線に沿う断面図である。 1,30…・・・ガラス端子、2,31・・・…アイレ
ツト、3,33……ガラス、4,34……リード線、5
,20,35・・・・・・ベース(ステム基板、放熱板
、容器)、7,21,36・・・・・・透孔、11・・
・…銅〆ツキ層、22……フランジ。 系7図 菜2図 紫3図 ※イ、図 繁づ図 第6図 弟7図 芽室8図
FIG. 1 is a plan view of a stem for a semiconductor device, which is the background of the present invention and to which a manufacturing method according to an embodiment of the present invention is applied; FIG. 2 is a sectional view taken along the line 0-RO in FIG. FIG. 3 is an enlarged cross-sectional view of the main parts for explaining the manufacturing method of the stem for the semiconductor device shown in FIGS. 1 and 2, and FIG. FIG. 5 is a plan view of a stem for a semiconductor device for explaining another embodiment of the present invention; FIG. The figure is a sectional view taken along the mark line in FIG. 5, FIG. 7 is a plan view of a stem for a crystal oscillator for explaining still another embodiment of the present invention, and FIG. FIG. 3 is a sectional view taken along a straight line. 1, 30... Glass terminal, 2, 31... Eyelet, 3, 33... Glass, 4, 34... Lead wire, 5
, 20, 35...Base (stem board, heat sink, container), 7, 21, 36...Through hole, 11...
・...Copper finish layer, 22...Flange. Kei 7 Diagram Nai 2 Diagram Purple 3 Diagram *I, Diagram Shigezu Diagram 6 Younger brother 7 Diagram Memuro 8

Claims (1)

【特許請求の範囲】 1 鉄製のアイレツトの全面に銅メツキ層を形成し、こ
のアイレツト内にガラスを介してリード線を気密絶縁的
に封着してガラス端子を製作する工程と、このガラス端
子を銅製のベースの透孔に嵌合する工程と、前記ガラス
端子のアイレツトをベースにロウ付けする工程とを含む
気密端子の製造方法。 2 前記ベースは略菱形状のステム基板である、特許請
求の範囲第1項記載の気密端子、特に半導体装置用ステ
ムの製造方法。 3 前記ベースは円形の放熱板であり、かつその外側に
さらに略菱形状の鉄製のフランジを備える、特許請求の
範囲第1項記載の気密端子、特に半導体装置用ステムの
製造方法。 4 前記ガラス端子は長円形状のアイレツトの長手方向
の両端の透孔にそれぞれガラスを介してリード線を気密
絶縁的に封着して製作され、かつ前記ベースは舟形状の
容器である、特許請求の範囲第1項記載の気密端子、特
に水晶振動子用ステムの製造方法。
[Claims] 1. A step of manufacturing a glass terminal by forming a copper plating layer on the entire surface of an iron eyelet and sealing a lead wire inside the eyelet in an airtight and insulating manner through glass, and a step of manufacturing a glass terminal. A method for manufacturing an airtight terminal, comprising the steps of fitting the glass terminal into a through hole of a copper base, and brazing the eyelet of the glass terminal to the base. 2. The method for manufacturing an airtight terminal, particularly a stem for a semiconductor device, according to claim 1, wherein the base is a stem substrate having a substantially rhombic shape. 3. The method for manufacturing an airtight terminal, particularly a stem for a semiconductor device, according to claim 1, wherein the base is a circular heat sink, and further includes a substantially diamond-shaped iron flange on the outside thereof. 4. The glass terminal is manufactured by hermetically and insulatively sealing the lead wires into the through holes at both longitudinal ends of an oval eyelet through glass, and the base is a boat-shaped container, the patent states. A method for manufacturing an airtight terminal, particularly a stem for a crystal resonator, according to claim 1.
JP54125180A 1979-09-27 1979-09-27 Manufacturing method for airtight terminals Expired JPS606544B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54125180A JPS606544B2 (en) 1979-09-27 1979-09-27 Manufacturing method for airtight terminals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54125180A JPS606544B2 (en) 1979-09-27 1979-09-27 Manufacturing method for airtight terminals

Publications (2)

Publication Number Publication Date
JPS5648159A JPS5648159A (en) 1981-05-01
JPS606544B2 true JPS606544B2 (en) 1985-02-19

Family

ID=14903869

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54125180A Expired JPS606544B2 (en) 1979-09-27 1979-09-27 Manufacturing method for airtight terminals

Country Status (1)

Country Link
JP (1) JPS606544B2 (en)

Also Published As

Publication number Publication date
JPS5648159A (en) 1981-05-01

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