JPS61115232A - Magnetic recording medium - Google Patents
Magnetic recording mediumInfo
- Publication number
- JPS61115232A JPS61115232A JP23735384A JP23735384A JPS61115232A JP S61115232 A JPS61115232 A JP S61115232A JP 23735384 A JP23735384 A JP 23735384A JP 23735384 A JP23735384 A JP 23735384A JP S61115232 A JPS61115232 A JP S61115232A
- Authority
- JP
- Japan
- Prior art keywords
- film
- plasma
- recording medium
- magnetic recording
- top coat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 34
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 50
- 239000010409 thin film Substances 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 230000005294 ferromagnetic effect Effects 0.000 claims description 23
- 239000002994 raw material Substances 0.000 claims description 12
- 229910052799 carbon Inorganic materials 0.000 claims description 9
- 229910052731 fluorine Inorganic materials 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 6
- 239000011737 fluorine Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 abstract description 9
- 238000005260 corrosion Methods 0.000 abstract description 9
- 230000004907 flux Effects 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 24
- 239000000758 substrate Substances 0.000 description 9
- 238000011282 treatment Methods 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000003921 oil Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000006116 polymerization reaction Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- -1 boromine Chemical compound 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000013626 chemical specie Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000000921 elemental analysis Methods 0.000 description 2
- HCDGVLDPFQMKDK-UHFFFAOYSA-N hexafluoropropylene Chemical group FC(F)=C(F)C(F)(F)F HCDGVLDPFQMKDK-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 241000428352 Amma Species 0.000 description 1
- 229910015900 BF3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VOPWNXZWBYDODV-UHFFFAOYSA-N Chlorodifluoromethane Chemical compound FC(F)Cl VOPWNXZWBYDODV-UHFFFAOYSA-N 0.000 description 1
- 229910020630 Co Ni Inorganic materials 0.000 description 1
- 229910002440 Co–Ni Inorganic materials 0.000 description 1
- BDAGIHXWWSANSR-UHFFFAOYSA-N Formic acid Chemical compound OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 1
- 239000004341 Octafluorocyclobutane Substances 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PXBRQCKWGAHEHS-UHFFFAOYSA-N dichlorodifluoromethane Chemical compound FC(F)(Cl)Cl PXBRQCKWGAHEHS-UHFFFAOYSA-N 0.000 description 1
- 235000019404 dichlorodifluoromethane Nutrition 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000010985 leather Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 1
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 description 1
- 235000019407 octafluorocyclobutane Nutrition 0.000 description 1
- QYSGYZVSCZSLHT-UHFFFAOYSA-N octafluoropropane Chemical compound FC(F)(F)C(F)(F)C(F)(F)F QYSGYZVSCZSLHT-UHFFFAOYSA-N 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 229960004065 perflutren Drugs 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920003055 poly(ester-imide) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005211 surface analysis Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Lubricants (AREA)
- Paints Or Removers (AREA)
- Magnetic Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
■ 発明の背景
技術分野
本発明は、磁気記録媒体、特に連続l1Illi型の磁
性層を有する磁気記録媒体のトップコート膜の改良に関
する。DETAILED DESCRIPTION OF THE INVENTION 1. Background of the Invention Technical Field The present invention relates to an improvement in the top coat film of a magnetic recording medium, particularly a magnetic recording medium having a continuous 11Illi type magnetic layer.
先行技術とその問題点
ビデオ用、オーディオ用等の磁気記録媒体として、テー
プ化して巻回したときのコンパクト性から、連続薄膜型
の磁性層を有するものの開発が活発に行われている。Prior art and its problems As magnetic recording media for video, audio, etc., media having a continuous thin film type magnetic layer are being actively developed because of their compactness when wound into tapes.
このような連a薄膜型の媒体の磁性層としては、特性上
、′X&X油体に対し所定の傾斜角にて基若を行う、い
わゆる斜め蒸着法によって形成したCo、Go−Ni
、Co−0,Co−Ni−0系等の3着膜が最も好適で
ある。Due to its characteristics, the magnetic layer of such a continuous thin film type medium is made of Co, Go-Ni, which is formed by the so-called oblique evaporation method, which is deposited at a predetermined tilt angle with respect to the X&X oil body.
, Co-0, Co-Ni-0 and the like are most suitable.
しかし、このような磁性層は、走行摩擦が大きく 膜強
度が低く、ヘッドタッチも、舊く、特に、走行耐久性が
低く、くりかえし走行によって出力が低下してしまう。However, such a magnetic layer has high running friction, low film strength, poor head touch, and particularly low running durability, resulting in a decrease in output due to repeated running.
また、ビデオ用の媒体では、スチルと称される静市画像
モードでの耐久時間が小さい。In addition, video media have a short durability in a still image mode called still.
さらに、いわゆるドロップアウトも多い。Furthermore, there are many so-called dropouts.
このような実状から、従来、斜め落着膜磁性層のトップ
コート膜が種々提案されている。Under these circumstances, various top coat films of diagonally deposited magnetic layers have been proposed.
そして、トップコート膜の1例として、フッ化炭素系の
プラズマ重合膜が知られている(特開昭59−7265
3号、同5B−194131号、同57−135442
号、同57−135443号、同57−198542号
、同58−102330号、同58−88829号、同
58−88828号等)。As an example of a top coat film, a fluorocarbon-based plasma polymerized film is known (Japanese Patent Laid-Open No. 59-7265
No. 3, No. 5B-194131, No. 57-135442
No. 57-135443, No. 57-198542, No. 58-102330, No. 58-88829, No. 58-88828, etc.).
しかし1通常の方法で得られたフッ化炭素系のプラズマ
重合膜トップフートでは、走行摩擦が大きく、また耐食
性付与の点で不十分であり、さらには再生出力が低下す
る等の不都合がある。However, the fluorocarbon-based plasma polymerized film top foot obtained by the conventional method has disadvantages such as high running friction, insufficient corrosion resistance, and reduced regeneration output.
■ 発明の目的
本発明の目的は、走行摩擦が小さく、耐食性が良好であ
り さらには再生出力の低下をおこさない磁気記録媒体
を搗供することにある。(2) Purpose of the Invention An object of the present invention is to provide a magnetic recording medium that has low running friction, good corrosion resistance, and does not cause a decrease in reproduction output.
m 発明の開示 このような目的は下記の本発明によって達成される。m Disclosure of the invention These objects are achieved by the invention described below.
すなわち本発明は、支持体上に強磁性金属薄膜を有し、
この強磁性金属薄膜上にトップコート膜を有する磁気記
録媒体において。That is, the present invention has a ferromagnetic metal thin film on a support,
In a magnetic recording medium having a top coat film on this ferromagnetic metal thin film.
トップコート膜が、炭素およびツーl素を含有し、フッ
素/炭素の原子比が0.3〜2であるプラズマを金膜で
あって、n51厚10〜40人であり、水との接触角が
100〜13o#であることを特徴とする磁気記録媒体
である。The top coat film is a gold film containing plasma containing carbon and fluorine and having a fluorine/carbon atomic ratio of 0.3 to 2, an N51 thickness of 10 to 40 mm, and a contact angle with water of 0.3 to 2. is 100 to 13o#.
■ 発明の具体的構成 本発明の具体的構成について、以下に詳細に説明する。■Specific structure of the invention A specific configuration of the present invention will be explained in detail below.
本発明の磁気記録媒体のトップコート膜はプラズマ重合
膜である。The top coat film of the magnetic recording medium of the present invention is a plasma polymerized film.
そして、この膜は炭素およびフッ素を含有する薄膜であ
る。This film is a thin film containing carbon and fluorine.
これらの元素を含む薄膜は、通常、操作性の良いことか
ら常温で気体のテトラフロロメタン、オクタフロロプロ
パン、オクタフロロシクロブタン、テトラフロロエチレ
ン、ヘキサフロロプロピレンなどのフッ化炭素原料ガス
を単独もしくは混合して、あるいはフッ化ホウ素。Thin films containing these elements are usually made using fluorocarbon raw material gases such as tetrafluoromethane, octafluoropropane, octafluorocyclobutane, tetrafluoroethylene, and hexafluoropropylene, which are gases at room temperature, either singly or in combination, due to their ease of operation. or boron fluoride.
フッ化窒素、フッ化ケイ素等のIWi以上を前記フッ化
炭素の1種以上と混合して用い、プラズマ重合によって
形成される。It is formed by plasma polymerization using IWi or higher nitrogen fluoride, silicon fluoride, etc. mixed with one or more of the above-mentioned fluorocarbons.
この場合、必要に応じて常温で液体または固体のフロン
12、フロン13B 1.フロン22等を原料として用
いてもよい。In this case, if necessary, Freon 12 or Freon 13B, which is liquid or solid at room temperature, 1. Freon 22 or the like may be used as a raw material.
また、必要に応じて、原料に窒素、醜素、ホウ素、リン
等の微量成分を添加してもよい。Further, if necessary, trace components such as nitrogen, boromine, boron, and phosphorus may be added to the raw material.
また、トップコート膜に含有されるツー/素/炭素の原
子比は0.3〜2であり、より好ましくは0.5〜1.
5である。 この原子比が0.3未満であると、走行摩
擦が十分低下せず、実用に耐えない。Further, the atomic ratio of two/element/carbon contained in the top coat film is 0.3 to 2, more preferably 0.5 to 1.
It is 5. If this atomic ratio is less than 0.3, the running friction will not be sufficiently reduced and it will not be practical.
また、この原子比が2をこえると走行回数の増加に伴い
出力が低下し、実用に耐えない。Moreover, if this atomic ratio exceeds 2, the output will decrease as the number of runs increases, making it unsuitable for practical use.
なお、トップコート膜のF/Cの元素分析は、SIMS
、ESCAオージェなどの分析方法を用いればよい、
SIMSを用いる場合。In addition, the elemental analysis of F/C of the top coat film was performed using SIMS.
, an analysis method such as ESCA Auger may be used.
When using SIMS.
) −/ フコート膜表面にて、FおよびCをカウント
して算出すればよい、 あるいはAr等でイオンエツチ
ングを行いながらFおよびCのプロファイルを測定して
算出してもよい。) -/ It may be calculated by counting F and C on the surface of the fucoate film, or it may be calculated by measuring the profile of F and C while performing ion etching with Ar or the like.
!MMSの測定については1表面科学基礎講座第3巻(
1984)表面分析の基礎と応用P70“SIMSおよ
びI、AMMA”の記載に誉えばよい。! Regarding the measurement of MMS, please refer to Volume 3 of 1 Surface Science Basic Course (
1984) Fundamentals and Applications of Surface Analysis P70 "SIMS and I, AMMA" can be praised for its description.
そして、プラズマ重合膜の膜厚はlO〜4゜λであり、
より好ましくは15〜30λである。The thickness of the plasma polymerized film is lO~4°λ,
More preferably, it is 15 to 30λ.
M続i4s型の磁気記録媒体では、プラズマ重合膜が4
0人をこえるとスペーシングロス(yIみ分による磁気
の損失)が大さくなりすぎて磁束密度が低下する。そし
て目づまりが増加し。In the M series i4s type magnetic recording medium, the plasma polymerized film is
If the number exceeds 0, the spacing loss (magnetic loss due to yI difference) becomes too large and the magnetic flux density decreases. And clogging increases.
耐久走行後の出力低下が大きくなる等の問題点が多発す
る。Problems such as a large decrease in output after endurance running occur frequently.
また、10人より薄いと1本発明の耐食性や、耐久性が
得られない、 このような膜厚の制御はプラズマ重合膜
形成の場合、以下で述べるように反応時間、媒体移行速
度、原料ガス流量を制御することによって行われ、スペ
ーシングロスが少なく、耐食性、耐久性が良好な、ts
体が実現する。In addition, if it is thinner than 10, the corrosion resistance and durability of the present invention cannot be obtained. In the case of forming a plasma polymerized film, such control of film thickness depends on the reaction time, medium transfer rate, and raw material gas as described below. This is done by controlling the flow rate, and has low spacing loss, good corrosion resistance, and durability.
The body is realized.
そして、このトップコート膜と水との接触角は100〜
130@であり、より好ましく110〜120@である
。 この接触角が1001未満であると初期+1!擦が
大きく、実用上使用に耐えない。The contact angle between this top coat film and water is 100~
130@, more preferably 110 to 120@. If this contact angle is less than 1001, the initial value is +1! It has a lot of friction and is not suitable for practical use.
また、この接触角が130”をこえるプラズマ重合膜を
つくるのは困難であり、また、実用上のその必要性がな
いからである。Further, it is difficult to produce a plasma polymerized film having a contact angle of more than 130'', and there is no practical need for it.
本発明のプラズマ重合膜の形成は、W/FM(ここに、
Wはプラズマ投入電力(Joule/5ec)、Fは原
料ガス流量(Kg/5ec) 、 Mは原料ガス分子量
)値がl O7〜l O12Joule/kgの条件範
囲内で行われる。 より好ましくW/FM値が108〜
l O11Joule/kgである。 W/FM値が1
07未満であると、表面が緻害なプラズマ重合膜が出来
ない、 そのため耐食性に劣り実用に耐えない、 また
1012をこえると下地に対するダメージが大きくなる
ため、実用に耐えない。Formation of the plasma polymerized film of the present invention is performed using W/FM (herein,
W is the plasma input power (Joule/5ec), F is the raw material gas flow rate (Kg/5ec), and M is the raw material gas molecular weight). More preferably W/FM value is 108~
l O11 Joule/kg. W/FM value is 1
If it is less than 07, a plasma-polymerized film with a dense surface cannot be formed, resulting in poor corrosion resistance and cannot be put to practical use.If it exceeds 1012, the damage to the base will be large and it cannot be put to practical use.
なお、原料ガスを2種以上用いるとき、FおよびMは、
その総和で算入される。In addition, when using two or more kinds of raw material gases, F and M are
The total amount will be counted.
プラズマ重合膜は、原料ガスとして前述のツーI化炭素
等を用い、このガスの放電プラズマを磁性層に接触され
ることにより重合膜を形成するものであ゛る。The plasma polymerized film uses the above-mentioned carbon dioxide as a raw material gas, and forms a polymerized film by bringing discharge plasma of this gas into contact with a magnetic layer.
プラズマ重合の原理について概説すると、基体を低圧に
保ち、電場を作用させると、基体中に少量存在する自由
電子は、常圧に比べ分子距離が非常に大きいため、電解
加速を受け5〜10eVの運動エネルギー(TL子湯温
度を獲得する。To give an overview of the principle of plasma polymerization, when the substrate is kept at low pressure and an electric field is applied, the free electrons present in a small amount in the substrate undergo electrolytic acceleration due to their molecular distance being very large compared to normal pressure. Obtain kinetic energy (TL child bath temperature.
この加速電子が原子や分子に衝突すると、原子軌道や分
子軌道を分断し、これらを電子、イオン、中性ラジカル
など1通常の状態では不安定の化学種に解離させる。When these accelerated electrons collide with atoms and molecules, they disrupt atomic and molecular orbits and dissociate them into chemical species that are unstable under normal conditions, such as electrons, ions, and neutral radicals.
解離した電子は再び電解加速を受けて、別の原子や分子
を解離させるが、この連鎖作用で気体はたちまち高度の
電離状態となる。 そしてこれはプラズマガスと呼ばれ
ている。The dissociated electrons are electrolytically accelerated again and dissociate other atoms and molecules, and this chain reaction quickly turns the gas into a highly ionized state. And this is called plasma gas.
気体分子は電子との衝突の機会が少ないのでエネルギー
をあまり吸収せず、常温に近い温度に保たれている。Gas molecules have fewer chances of collision with electrons, so they do not absorb much energy and are kept at a temperature close to room temperature.
このように、電子の運動エネルギー(′:4.子温度)
と1分子の熱連動(ガス温度)が分離した系は低温プラ
ズマと呼ばれ、ここでは化学種が比較的原型を保ったま
ま重合等の加酸的化学反応を進めうる状況を創出してお
り5本発明はこの状況を利用してベースフィルム上にプ
ラズマ重合膜を形成しようとするものである。 なお
、低温プラズマを利用するため、ベースフィルムや磁性
層の熱影響は全くない。In this way, the kinetic energy of the electron (′: 4.child temperature)
A system in which the gas and one molecule's thermal interlock (gas temperature) are separated is called a low-temperature plasma, and this creates a situation in which chemical species can proceed with acidic chemical reactions such as polymerization while remaining relatively intact. 5 The present invention attempts to utilize this situation to form a plasma polymerized film on a base film. Note that since low-temperature plasma is used, there is no thermal effect on the base film or magnetic layer.
プラズマにより、ベースフィルム表面にプラズマ重合膜
を形成する装置例が第1図に示しである。 !1図は
1周波数可変型の電源を用いたプラズマ重合装置である
。An example of an apparatus for forming a plasma polymerized film on the surface of a base film using plasma is shown in FIG. ! Figure 1 shows a plasma polymerization apparatus using a single frequency variable power source.
第frAにおいて1反応容器Rには、IiK料ガス源5
11または512から原料ガスがそれぞれマスフローコ
ントローラ521および522を経て供給される。 ガ
ス源511または512かた別々のガスを供給する場合
は、混合器53において混合して供給する。In the first frA, one reaction vessel R includes an IiK material gas source 5
Raw material gas is supplied from 11 or 512 via mass flow controllers 521 and 522, respectively. When separate gases are supplied to the gas source 511 or 512, they are mixed in a mixer 53 and then supplied.
原料ガスは、各々1〜250mA/分の流量範囲をとり
うる。Each source gas can have a flow rate range of 1 to 250 mA/min.
反応容器R内には、被処理ベースフィルム支持91が設
置され、ここでは磁気テープ用のフィルムの処理を目的
として、繰出しロール561と巻取りロール562とが
示しである。Inside the reaction vessel R, a base film support 91 to be processed is installed, and a feed roll 561 and a take-up roll 562 are shown here for the purpose of processing a film for magnetic tape.
被処理磁気記録媒体用ベースフィルムの形態に応じて様
々の支持装置が使用でき1例えば蔵置式の回転支持装置
が使用されうる。Various support devices can be used depending on the form of the base film for the magnetic recording medium to be processed. For example, a storage type rotary support device can be used.
被処理ベースフィルムを間に挟んで対向する電極551
.552が設けられており、一方の電極551は周波数
可変型の電源54に接続され、他方の電極552が設置
されている。Electrodes 551 facing each other with the base film to be processed in between
.. 552, one electrode 551 is connected to a variable frequency power source 54, and the other electrode 552 is installed.
さらに、反応容器R内には、容器内を排気するための真
空系統が配備され、そしてこれは液体窒素トラップ57
.油回転ポンプ58および真空コントローラ59を含む
、 これら真空系統は反応容器内を0.0l−10To
rrの真空度のaii!tlに維持する。Furthermore, a vacuum system for evacuating the inside of the reaction vessel R is provided, and this is a liquid nitrogen trap 57.
.. These vacuum systems include an oil rotary pump 58 and a vacuum controller 59.
rr vacuum degree aii! Maintain at tl.
操作においては1反応容器R内がまず103Tarr以
下になるまで油回転ポンプにより容器内を排気し、その
後原料ガスが所定の流量において容器内に混合状態で供
給される。In operation, the interior of one reaction vessel R is first evacuated by an oil rotary pump until the pressure in the vessel R becomes 103 Tarr or less, and then the raw material gas is supplied into the vessel in a mixed state at a predetermined flow rate.
このとき1反応容器内の真空は0.01〜10Torr
の範囲に管理される。At this time, the vacuum inside one reaction vessel is 0.01 to 10 Torr.
managed within the range of
フィルムの移行速度ならびに原料ガスの流量が安定する
と、周波数可変型電源がオンにされる。 こうして、移
行中のベースフィルムにプラズマ重合膜が形成される。Once the film transfer rate and the flow rate of the source gas are stabilized, the variable frequency power supply is turned on. In this way, a plasma polymerized film is formed on the transferring base film.
なお、キャリアガスとしてAr、N2 、Heなどが使
用できる。Note that Ar, N2, He, etc. can be used as the carrier gas.
なお、印加電流、処理時間等は通常の条件とすればよい
。Note that the applied current, processing time, etc. may be set to normal conditions.
プラズマ発生源としては、上述した高周波放電の他に、
マイクロ波放電、直流放電、交流放電等いずれでも利用
できる。In addition to the above-mentioned high-frequency discharge, plasma generation sources include
Any of microwave discharge, direct current discharge, alternating current discharge, etc. can be used.
また、プラズマ重合膜のトップコート膜は。Also, the top coat film of plasma polymerized film.
強磁性金属薄膜上に設層される。Layered on a ferromagnetic metal thin film.
この下地層としての強磁性金属薄8層は、Coを主成分
とし、これにOを含み、さらに必要に応じNiおよび/
またはCrが含有される組成を有する。The 8 thin ferromagnetic metal layers as the underlayer are mainly composed of Co and contain O, and further include Ni and/or as necessary.
Or it has a composition containing Cr.
すなわち、好ましい追補においては、Co単独からなっ
てもよ<、CoとNiからなってもよいa NIが含
まれる場合、Co/NIの重量比は、1.5以上である
ことが好ましい。That is, in a preferred addition, when NI is included, which may consist of Co alone or a NI may consist of Co and Ni, the weight ratio of Co/NI is preferably 1.5 or more.
さらに、強磁性金属薄膜層中には、Crが含有されてい
てもよい。Furthermore, Cr may be contained in the ferromagnetic metal thin film layer.
Crが含有されると、電磁変換特性が向上し、出力およ
びS/N比が向上し、さらに膜強度も向上する。When Cr is contained, electromagnetic conversion characteristics are improved, output and S/N ratio are improved, and film strength is also improved.
このような場合、 Cr / CoあるいはCr/(C
o+Ni)のji重量比0.0O1〜0.l、より好ま
しくは、o、oos〜0.05であることが好ましい。In such cases, Cr/Co or Cr/(C
o+Ni) ji weight ratio 0.0O1 to 0. l, more preferably o, oos to 0.05.
さらに1強磁性金属薄膜中には0が含有されるものであ
る。Furthermore, 0 is contained in the ferromagnetic metal thin film.
強磁性金属薄膜中の平均酸素量は、原子比。The average amount of oxygen in a ferromagnetic metal thin film is an atomic ratio.
特にO/(CoまたはCo+Ni)の原子比で、0.5
以下、より好ましくは0.05〜0.5であることが好
ましい。In particular, the atomic ratio of O/(Co or Co+Ni) is 0.5
Hereinafter, it is more preferably 0.05 to 0.5.
この場合1強磁性金属薄膜層の表面では、酸素が強磁性
金属(Co、Ni)と酸化物を形成している。In this case, oxygen forms an oxide with the ferromagnetic metal (Co, Ni) on the surface of the first ferromagnetic metal thin film layer.
すなわち、表面部、特に表面から50〜500人、より
好ましくは50〜200人の厚さの範囲には、オージェ
分光分析により、S化物を示すピークが認められるもの
である。 そして、この酸化物層の酸素含有量は、原子
比で0.5〜i、o程度である。That is, in the surface area, particularly in the thickness range of 50 to 500, more preferably 50 to 200, from the surface, a peak indicating a sulfide is observed by Auger spectroscopy. The oxygen content of this oxide layer is about 0.5 to i,0 in atomic ratio.
なお、このような強磁性金属薄膜中には。In addition, in such a ferromagnetic metal thin film.
さらに他の微量成分、特に遷移元素、例えばFe、Mn
、V、Zr、Nb、Ta、Ti 。Furthermore, other trace components, especially transition elements such as Fe, Mn
, V, Zr, Nb, Ta, Ti.
Z n 、 M o 、 W 、 Cu等が含まれてい
てもよい。Zn, Mo, W, Cu, etc. may be included.
このような強磁性金属薄膜層は、好ましい態様において
、上記したCoを主成分とする柱状結晶粒の集合体から
なる。In a preferred embodiment, such a ferromagnetic metal thin film layer is composed of an aggregate of columnar crystal grains mainly composed of Co as described above.
この場合、強磁性金属薄膜層の厚さは。In this case, the thickness of the ferromagnetic metal thin film layer is.
0.05〜0.5終m、好ましくは、0.07〜0.3
JLmとされる。0.05-0.5 m, preferably 0.07-0.3
It is said to be JLm.
そして、柱状の結晶粒・は、薄膜の厚さ方向のほぼ全域
に亘る長さをもち、その長手方向は。The columnar crystal grains have a length spanning almost the entire thickness direction of the thin film;
基体の主面の法線に対して、10〜70°の範囲にて傾
斜していることが好ましい。Preferably, the angle is inclined within a range of 10 to 70 degrees with respect to the normal to the main surface of the base.
なお、酸素は、表面部の柱状の結晶粒の表面に前記のと
おり化合物の形で存在するものである。Note that oxygen exists in the form of a compound on the surface of the columnar crystal grains in the surface portion, as described above.
また1強磁性金属薄wA層の酸素の濃度勾配の何如には
特に制限はない。Further, there is no particular restriction on the oxygen concentration gradient of the first ferromagnetic metal thin wA layer.
また、結晶粒の短径は、50〜500人程度の長さをも
つことが好ましい。Moreover, it is preferable that the short axis of the crystal grain has a length of about 50 to 500 grains.
このような強磁性金属薄膜層を形成する基板は、非磁性
のものでありさえすれば特に制限はないが、特に可とう
性の基板、特にポリエステル、ポリイミド等の樹脂製の
ものであることが好ましい、 “
また、その厚さは、a々のものであってよいが、特に5
〜204mであることが好ましい。The substrate on which such a ferromagnetic metal thin film layer is formed is not particularly limited as long as it is non-magnetic, but it is particularly preferable to use a flexible substrate, especially one made of resin such as polyester or polyimide. Preferably, "Also, the thickness may be a, but especially 5".
It is preferable that it is 204 m.
この場合、基板の強磁性金属薄膜層形成面の裏面には、
公知の種々のバックコート暦が形成されていてもよい。In this case, on the back side of the ferromagnetic metal thin film layer forming surface of the substrate,
Various known backcoat patterns may be formed.
なお、基板と強磁性金属薄1111!’との間には。In addition, the substrate and the ferromagnetic metal thin 1111! ’ between.
必要に応じ、公知の各種下地層を介在させることもでき
る。If necessary, various known underlayers may be interposed.
また、もし必要であるならば、強磁性金属薄膜層を複数
に分割して、その間に非強磁性金属薄膜層を介在させて
もよい。Furthermore, if necessary, the ferromagnetic metal thin film layer may be divided into a plurality of parts, and a non-ferromagnetic metal thin film layer may be interposed between them.
磁性層の形成は電解蒸着、イオンブレーティング等を用
いることもできるが、いわゆる斜め蒸着法によって形成
されることが好ましい。The magnetic layer can be formed by electrolytic vapor deposition, ion blating, etc., but it is preferably formed by a so-called oblique vapor deposition method.
この場合、基体法線に対する、薄着物質の入射角の最小
値は、200以上とすることが好ましい。In this case, the minimum value of the incident angle of the thinly deposited substance with respect to the normal to the substrate is preferably 200 or more.
入射角が20”未満となると、電磁置換特性が低下する
。When the incident angle is less than 20'', the electromagnetic displacement characteristics deteriorate.
なお、M着雰囲気は1通常、アルゴン、ヘリウム、真空
等の不活性雰囲気に、酸素ガス、を含む雰囲気とし、t
o−sxxoo Pa程度の圧力とし、また、革着距離
、基体搬送方向、キャンやブスクの構造、配置等は公知
の条件と同様にすればよい。Note that the M deposition atmosphere is usually an atmosphere containing oxygen gas in an inert atmosphere such as argon, helium, or vacuum;
The pressure may be approximately o-sxxoo Pa, and the leather application distance, substrate conveyance direction, structure and arrangement of cans and busks, etc. may be the same as known conditions.
そして、酸素雰囲気での蒸着により1表面に金属酸化物
の被膜が形成される。 なお、金属酸化物が形成される
酸素ガス分圧は、実験から容易に求めることができる。Then, a metal oxide film is formed on one surface by vapor deposition in an oxygen atmosphere. Note that the oxygen gas partial pressure at which metal oxides are formed can be easily determined through experiments.
なお1表面に金属酸化物の被膜を形成する゛には、各種
酸化処理が可能である。Note that various oxidation treatments can be used to form a metal oxide film on one surface.
適用できる酸化処理としては下記のようなものがある。Applicable oxidation treatments include the following.
l)乾式処理
a、エネルギー粒子処理
特願昭58−76840号に記数したように、蒸着の後
期に、イオンガンや中性ガンにより酸素をエネルギー粒
子として磁性層にさしむけるもの。l) Dry process a, energetic particle process As noted in Japanese Patent Application No. 76840/1982, oxygen is applied to the magnetic layer as energetic particles using an ion gun or a neutral gun in the latter stage of vapor deposition.
b、グロー処理 02 、N20,02 +H20等、!:Ar。b. Glow treatment 02, N20, 02 +H20, etc.! :Ar.
N2等の不活性ガスとを用い、これをグロー放電してプ
ラズマを生じさせ、このプラズマ中に磁性膜表面をさら
すもの。An inert gas such as N2 is used to generate plasma by glow discharge, and the surface of the magnetic film is exposed to this plasma.
C1酸化性ガス オゾン、加熱水蒸気等の酸化性ガスを吹きつけるもの。C1 oxidizing gas Items that spray oxidizing gas such as ozone or heated steam.
d、加熱処理
加熱によって酸化を行うもの、 加熱温度は60〜15
0℃程度。d, Heat treatment: Oxidation is performed by heating, heating temperature is 60-15
Around 0℃.
2)湿式処理
a、陽極酸化
す、アルカリ処理
C1酸処理
クロム酸塩処理、過マンガン酸塩処理、リン酸塩処理等
を用いる。2) Wet treatment a, anodic oxidation, alkaline treatment C1 acid treatment, chromate treatment, permanganate treatment, phosphate treatment, etc. are used.
d、酸化剤処理 H2O2等を用いる。d. Oxidizing agent treatment H2O2 etc. are used.
■ 発明の具体的効果
本発明によれば、支持体上に設層された強磁性金属薄膜
層上に、炭素およびフッ素を含有するプラズマ重合膜を
有する磁気記録媒体は、走行摩擦が小さく、また耐食性
も十分であり、さらには再生出力の低下もおこさないな
どの効果がある。■Specific Effects of the Invention According to the present invention, a magnetic recording medium having a plasma polymerized film containing carbon and fluorine on a ferromagnetic metal thin film layer formed on a support has low running friction and It has sufficient corrosion resistance and also has the effect of not causing a decrease in reproduction output.
■ 発明の具体的実施例
以下、本発明の具体的実施例を示し1本発明をさらに詳
細に説明する。(2) Specific Examples of the Invention Below, specific examples of the present invention will be shown and the present invention will be explained in more detail.
実施例1
10pmのポリエチレンテレフタレート(PET)製の
基板を、真空槽中に設けた冷却用ロールに沿わせて走行
させながら、Co−Ni合金をEBガンで加熱し02を
導入しつつ蒸着した。Example 1 While a 10 pm polyethylene terephthalate (PET) substrate was run along a cooling roll provided in a vacuum chamber, a Co-Ni alloy was heated with an EB gun and evaporated while introducing 02.
この場合、バックグランドの圧力は、5×10 ’ T
orr、02導入後の圧力は2 X l O−4Tar
tとした。In this case, the background pressure is 5×10′ T
orr, the pressure after introducing 02 is 2 X l O-4Tar
It was set as t.
また、蒸着の入射角は、90°から30’まで連続的に
減少させた。Also, the incident angle of deposition was continuously decreased from 90° to 30′.
組成は、Co8O−Ni20 (重量比)であり、M厚
は約1500人とした。The composition was Co8O-Ni20 (weight ratio), and the M thickness was about 1500.
その後、これを真空チャンバ中に入れて、10 ’ T
orrの真空に引いた。 そして、この中に、ガス状の
へキサフロロプロピレンを、キャリリアーガスとしてA
r11 : lの比率で導入した。 その後、ガス圧0
、1 forrに保ちながら、500W、13.56
MHzの高周波電圧をかけてプラズマを発生させ、
プラズマ重合膜を磁性層上に形成した。Then, put it in a vacuum chamber and heat it for 10'T.
It was pulled to a vacuum of orr. Then, gaseous hexafluoropropylene is added to A as a carrier gas.
It was introduced at a ratio of r11:l. After that, the gas pressure is 0
, 500W while keeping 1 forr, 13.56
Generate plasma by applying a high frequency voltage of MHz,
A plasma polymerized film was formed on the magnetic layer.
なお、ここで形成したプラズマ重合膜の膜厚は、10人
であった。The thickness of the plasma polymerized film formed here was 10 people.
また、W/FM値は3X l O’ 、C/F比は1.
0であった(サンプルNo、l)。In addition, the W/FM value is 3X l O', and the C/F ratio is 1.
It was 0 (sample No. 1).
これに準じ、磁性層上に、下記表1に示されるトップコ
ート層を形成した。According to this, a top coat layer shown in Table 1 below was formed on the magnetic layer.
なお、これらトップコート層の元素分析は。Furthermore, the elemental analysis of these top coat layers is as follows.
アルゴンでトップコートeをイオンエツチングしなから
SIMSで測定した。Topcoat e was ion-etched with argon and then measured using SIMS.
これら各サンプルについて特性を測定した。Characteristics of each of these samples were measured.
なお、特性の測定は以下のとおりである。The characteristics were measured as follows.
(1)走行摩擦 20℃、相対湿度60%にて測定。(1) Running friction Measured at 20°C and 60% relative humidity.
(2)耐食性 初期および60℃、相対湿度80%にて。(2) Corrosion resistance Initially and at 60°C and 80% relative humidity.
3日間保存後のΔφm/φm(%)を測定した。After storage for 3 days, Δφm/φm (%) was measured.
(3)出力
50パス走行後4 MHzの信号減少量(dB)を測
定した。(3) After running 50 output passes, the amount of signal reduction (dB) at 4 MHz was measured.
これらの結果から1本発明の効果があきらかである。From these results, the effects of the present invention are clear.
%1図は直流、交流および周波数可変型電源を使用した
プラズマ処理装置の概略図である。
符号の説明
53・・・・混合器。
54・・・・直流、交流および周波数可変型電源、57
・・・・液体窒素トラップ。
58・・・・油回転ポンプ。
511.512・・・・処理ガス源、
521.522・・・・マスフローコントローラ。
561.562・・・・繰出しおよび巻取りロール出願
人 ティーディーケイ株式会社
FIG、I
手続補正書印釦
昭和60年 8月12日
昭和59年特許願第237353号
2、発明の名称
磁気記録媒体
3、補正をする者
事件との関係 特許出願人
住 所 東京都中央区日本橋−丁目13番1号名
称 (306)ティーディーケイ株式会社代表者
大 歳 寛
4、代理人 〒101 電話864−4498住 所
東京都千代田区岩本町3丁目2番2号明細書の「発
明の詳細な説明」の欄
6、補正の内容
(1)明細書第12頁第17行目のr103JをrlO
’J と補正する。Figure %1 is a schematic diagram of a plasma processing apparatus using direct current, alternating current, and variable frequency power sources. Explanation of symbols 53...Mixer. 54...DC, AC and variable frequency power supply, 57
...Liquid nitrogen trap. 58...Oil rotary pump. 511.512...processing gas source, 521.522...mass flow controller. 561.562...Feeding and winding roll Applicant: TDC Co., Ltd. FIG, I Procedural amendment button August 12, 1985 Patent application No. 237353 2, Name of invention Magnetic recording medium 3. Relationship with the case of the person making the amendment Patent applicant address: 13-1 Nihonbashi-chome, Chuo-ku, Tokyo
(306) Representative of TDC Co., Ltd.
Hiroshi Otoshi 4, Agent 101 Telephone 864-4498 Address 3-2-2 Iwamoto-cho, Chiyoda-ku, Tokyo Column 6 of "Detailed Description of the Invention" of the Specification, Contents of Amendment (1) Specification No. r103J on page 12, line 17, rlO
Correct it with 'J.
Claims (4)
属薄膜上にトップコート膜を有する磁気記録媒体におい
て、 トップコート膜が、炭素およびフッ素を含有し、フッ素
/炭素の原子比が0.3〜2であるプラズマ重合膜であ
って、膜厚10〜40λであり、水との接触角が100
〜130°であることを特徴とする磁気記録媒体。(1) In a magnetic recording medium having a ferromagnetic metal thin film on a support and a top coat film on the ferromagnetic metal thin film, the top coat film contains carbon and fluorine, and the atomic ratio of fluorine/carbon is is 0.3 to 2, the film thickness is 10 to 40λ, and the contact angle with water is 100
A magnetic recording medium characterized in that the angle is 130°.
Mは原料ガス分子量)が10^7〜10^1^2jou
le/kgの条件で行われる特許請求の範囲第1項に記
載の磁気記録媒体。(2) Formation of plasma polymerized film is performed using W/FM (where W is plasma input power, F is raw material gas flow rate,
M is the raw material gas molecular weight) is 10^7 to 10^1^2jou
The magnetic recording medium according to claim 1, which is conducted under the condition of le/kg.
る特許請求の範囲第1項または第2項に記載の磁気記録
媒体。(3) The magnetic recording medium according to claim 1 or 2, wherein the ferromagnetic metal thin film is a metal thin film mainly composed of Co.
に記載の磁気記録媒体。(4) The magnetic recording medium according to claim 3, wherein the ferromagnetic metal thin film contains O.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23735384A JPS61115232A (en) | 1984-11-10 | 1984-11-10 | Magnetic recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23735384A JPS61115232A (en) | 1984-11-10 | 1984-11-10 | Magnetic recording medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61115232A true JPS61115232A (en) | 1986-06-02 |
Family
ID=17014133
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23735384A Pending JPS61115232A (en) | 1984-11-10 | 1984-11-10 | Magnetic recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61115232A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62264423A (en) * | 1986-05-09 | 1987-11-17 | Tdk Corp | Magnetic recording medium |
| JPS6379228A (en) * | 1986-09-22 | 1988-04-09 | Tdk Corp | Magnetic recording medium |
| JPS6386110A (en) * | 1986-09-29 | 1988-04-16 | Tdk Corp | Magnetic recording medium |
| JPS63106919A (en) * | 1986-06-12 | 1988-05-12 | Toshiba Corp | Magnetic recording medium and its production |
| US4749608A (en) * | 1984-11-09 | 1988-06-07 | Tdk Corporation | Magnetic recording medium |
| US4880687A (en) * | 1986-05-09 | 1989-11-14 | Tdk Corporation | Magnetic recording medium |
-
1984
- 1984-11-10 JP JP23735384A patent/JPS61115232A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4749608A (en) * | 1984-11-09 | 1988-06-07 | Tdk Corporation | Magnetic recording medium |
| JPS62264423A (en) * | 1986-05-09 | 1987-11-17 | Tdk Corp | Magnetic recording medium |
| US4880687A (en) * | 1986-05-09 | 1989-11-14 | Tdk Corporation | Magnetic recording medium |
| JPS63106919A (en) * | 1986-06-12 | 1988-05-12 | Toshiba Corp | Magnetic recording medium and its production |
| JPS6379228A (en) * | 1986-09-22 | 1988-04-09 | Tdk Corp | Magnetic recording medium |
| JPS6386110A (en) * | 1986-09-29 | 1988-04-16 | Tdk Corp | Magnetic recording medium |
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