JPS6112787B2 - - Google Patents
Info
- Publication number
- JPS6112787B2 JPS6112787B2 JP53114897A JP11489778A JPS6112787B2 JP S6112787 B2 JPS6112787 B2 JP S6112787B2 JP 53114897 A JP53114897 A JP 53114897A JP 11489778 A JP11489778 A JP 11489778A JP S6112787 B2 JPS6112787 B2 JP S6112787B2
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- thick film
- glass layer
- thin film
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004020 conductor Substances 0.000 claims description 104
- 239000011521 glass Substances 0.000 claims description 82
- 239000010408 film Substances 0.000 claims description 68
- 239000010409 thin film Substances 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 22
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 229910001252 Pd alloy Inorganic materials 0.000 description 4
- BBKFSSMUWOMYPI-UHFFFAOYSA-N gold palladium Chemical compound [Pd].[Au] BBKFSSMUWOMYPI-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000006060 molten glass Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- Electronic Switches (AREA)
Description
【発明の詳細な説明】
本発明は厚膜配線を有する感熱ヘツドに関す
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a thermal head with thick film wiring.
感熱ヘツドにおいて、蒸着やスパツタリングの
薄膜法により形成した薄膜配線は、単位長さ当り
の導体本数の点で有利であるが、配線形成に手数
を要するとともに製作コストが高くなるという問
題がある。これに対しスクリーン印刷などの厚膜
法で形成する厚膜配線は、配線形成が容易で製作
コストが安いと云う利点を有している。 In a thermal head, thin film wiring formed by a thin film method such as evaporation or sputtering is advantageous in terms of the number of conductors per unit length, but there are problems in that the wiring formation requires labor and increases manufacturing cost. On the other hand, thick-film wiring formed by a thick-film method such as screen printing has the advantage of being easy to form and inexpensive to manufacture.
しかしながら、厚膜配線では幅寸法の小さな導
体の形成には限界があり単位長さ当りで多数本の
導体を形成することは困難で、例えば１mmの長さ
に６本の導体を容易に形成することは困難であ
る。このため、単位長さ当りで多数本の導体を有
する配線は薄膜法により形成しており、厚膜法に
より配線を形成する範囲が限定されている。 However, with thick film wiring, there is a limit to the formation of conductors with small width dimensions, and it is difficult to form a large number of conductors per unit length. For example, six conductors can be easily formed in a length of 1 mm. That is difficult. For this reason, wiring having a large number of conductors per unit length is formed by the thin film method, and the range in which wiring can be formed by the thick film method is limited.
本発明は前記事情に鑑みてなされたもので、厚
膜配線を有効に用いた感熱ヘツドを提供するもの
である。 The present invention has been made in view of the above circumstances, and provides a thermal head that effectively uses thick film wiring.
すなわち、本発明の感熱ヘツドは、図面でも示
すように、基板１と、この基板１の同一平面上に
並べて形成された複数のガラス層と、このガラス
層のうち所定のガラス層の下側に位置して前記基
板上に形成された第１の厚膜導体２と、前記複数
のガラス層の間に形成され前記第１の厚膜導体２
と接続する厚膜接続導体５と、前記所定のガラス
層の上面に形成された第２の厚膜導体６と、前記
複数のガラス層の上面にわたつて形成され前記厚
膜接続導体５と接続する第１の薄膜導体７と、前
記複数のガラス層の上面にわたつて形成され前記
第２の厚膜導体６と接続される第２の薄膜導体８
と、前記複数のガラス層のうち他のガラス層の上
面において前記第１の薄膜導体７および前記第２
の薄膜導体８に夫々個別に接続して独立して形成
された発熱抵抗体９と、前記他のガラス層の上面
に形成され前記発熱抵抗体９を介して前記第１の
薄膜導体７および前記第２の薄膜導体８に共通に
接続する薄膜共通接続導体１０とを具備すること
を特徴とするものである。 That is, as shown in the drawings, the thermal head of the present invention includes a substrate 1, a plurality of glass layers formed side by side on the same plane of the substrate 1, and a glass layer below a predetermined glass layer among the glass layers. a first thick film conductor 2 located and formed on the substrate; and a first thick film conductor 2 formed between the plurality of glass layers.
a second thick film conductor 6 formed on the top surface of the predetermined glass layer; and a second thick film conductor 6 formed over the top surface of the plurality of glass layers and connected to the thick film connection conductor 5. a first thin film conductor 7 formed over the top surface of the plurality of glass layers and connected to the second thick film conductor 6;
and the first thin film conductor 7 and the second thin film conductor 7 on the upper surface of another glass layer among the plurality of glass layers.
The first thin film conductor 7 and the first thin film conductor 7 are connected to the first thin film conductor 7 and It is characterized by comprising a thin film common connection conductor 10 commonly connected to the second thin film conductor 8.
この感熱ヘツドにおいては、基板上の厚膜導体
を複数のガラス層の間から上側へ容易に導出で
き、基板の同一平面上に形成したガラス層上面で
導体を形成できるから、基板上の下層厚膜導体と
ガラス層上の上層厚膜導体を組合せて多層配線と
すれば、単位長さ当りで多数本の導体を有する厚
膜配線の形成が可能であり、厚膜配線の形成範囲
が拡大し、製作性および製作コストの向上が図れ
るものである。 In this heat-sensitive head, the thick film conductor on the substrate can be easily guided upward from between the multiple glass layers, and the conductor can be formed on the top surface of the glass layer formed on the same plane of the substrate. By combining a film conductor and an upper layer thick film conductor on a glass layer to form a multilayer wiring, it is possible to form a thick film wiring having a large number of conductors per unit length, and the range in which thick film wiring can be formed is expanded. , it is possible to improve manufacturability and manufacturing cost.
以下本発明を図面で示す実施例について説明す
る。 Embodiments of the present invention illustrated in the drawings will be described below.
図は本発明による感熱ヘツドの一実施例を示す
もので、図中１は平坦な基板で、これはアルミナ
などのセラミツク、または絶縁処理を施したニツ
ケル−鉄合金などの金属で形成されている。この
基板１の上面一半部には複数本の厚膜導体２……
…が平行間隔を存して形成してあり、これは例え
ば金あるいは金−パラジウム合金ペースト等を用
いてスクリーン印刷などの厚膜法により形成す
る。また基板１の上面において一半部には厚膜導
体２………を横断してこれを覆うように帯状をな
す第１ガラス層３が形成してあり、上面他半部に
は帯状をなす第２ガラス層４が第１ガラス層３と
並んで互に接合するように形成してある。第１ガ
ラス層３は例えば結晶化ガラスからなるものであ
るとともに第２ガラス層４は例えば溶融ガラスか
らなるもので、各々厚膜法によつて形成される。 The figure shows an embodiment of the heat-sensitive head according to the present invention. In the figure, 1 is a flat substrate, which is made of ceramic such as alumina or metal such as nickel-iron alloy with insulation treatment. . On one half of the upper surface of this substrate 1, a plurality of thick film conductors 2...
... are formed at parallel intervals, and are formed by a thick film method such as screen printing using, for example, gold or gold-palladium alloy paste. Further, on one half of the upper surface of the substrate 1, a strip-shaped first glass layer 3 is formed so as to cross and cover the thick film conductor 2, and on the other half of the upper surface, a strip-shaped first glass layer 3 is formed. The two glass layers 4 are formed side by side with the first glass layer 3 so as to be bonded to each other. The first glass layer 3 is made of, for example, crystallized glass, and the second glass layer 4 is made of, for example, molten glass, and each is formed by a thick film method.
第１ガラス層３を結晶化ガラスとするのは厚膜
導体の材質である金あるいは金−パラジウム合金
にガラス成分が侵入するのを防止するとともに厚
膜導体の焼成を可能とするためであり、第２ガラ
ス層４を溶融ガラスとするのは抵抗体９の下地と
して適しているからである。なお、厚膜導体２…
……の一端部は第１ガラス層３の外側縁から外部
に露出して端子としている。すなわち、第１ガラ
ス層３と第２ガラス層４は基板１の同一平面上で
形成されており、（厚みを同一にした場合には）
両ガラス層３，４の上面は平担面となるが、第１
ガラス層３の接合縁部を段状とすればより上面が
平担となる。また、第１ガラス層３と第２ガラス
層４との接合縁部間には、基板１上の厚膜導体２
………に各々対向して複数本の厚膜接続導体５…
……が形成してある。この厚膜接続導体５………
は両ガラス層３，４の接合縁間に沿つて形成さ
れ、その一端部は厚膜導体２………の他端部に接
続するとともに他端部は第１ガラス層３の上面上
に露出している。すなわち、厚膜導体２………は
厚膜接続導体５………を介して両ガラス層３，４
間を通してガラス層３，４面上へ導出される。さ
らに、第１ガラス層３の上面には基板１上の厚膜
導体２………間に位置して複数個の厚膜導体６…
……が形成してあり、これら厚膜導体６………は
電流印加用導体を接続するものである。この厚膜
導体２………と厚膜接続導体５………は金あるい
は金−パラジウム合金などを用いて厚膜法により
形成される。第２ガラス層４の面上から第１ガラ
ス層３の面上にかけては厚膜導体２………および
厚膜導体６………に各々対向して複数本の薄膜導
体７………および薄膜導体８………が交互に平行
に形成してあり、これら各薄膜導体７………，８
………の一端部には第２ガラス層４面上に形成し
た発熱用抵抗体９が接続してある。この抵抗体９
………は酸化アルミニウム、窒化タンタルなどか
らなる。薄膜導体７………の他端部は厚膜接続導
体５……の露出端部に、薄膜導体８………の他端
部は厚膜導体６………に夫々第１ガラス層３面上
で接続してある。第２ガラス層４面上の外側部に
は薄膜共通接続導体１０が形成され、この導体１
０は前記各抵抗体９………を介して薄膜導体７…
……と薄膜導体８………に共通に接続している。
これら薄膜導体７………，８………および導体１
０は金あるいは金−パラジウム合金などを用いて
蒸着やスパツタリングなどの薄膜法により形成さ
れる。そして、基板１上の厚膜導体２………は下
層配線、両ガラス層３，４上の厚膜導体６………
および薄膜導体７………，８………、導体１０は
上層配線となる。 The reason why the first glass layer 3 is made of crystallized glass is to prevent glass components from entering the gold or gold-palladium alloy that is the material of the thick film conductor, and to enable firing of the thick film conductor. The second glass layer 4 is made of molten glass because it is suitable as a base for the resistor 9. Note that the thick film conductor 2...
... One end portion is exposed to the outside from the outer edge of the first glass layer 3 and serves as a terminal. That is, the first glass layer 3 and the second glass layer 4 are formed on the same plane of the substrate 1 (if they have the same thickness)
The upper surfaces of both glass layers 3 and 4 are flat surfaces, but the first
If the joining edge of the glass layer 3 is stepped, the upper surface will be more flat. Further, between the bonding edge of the first glass layer 3 and the second glass layer 4, there is a thick film conductor 2 on the substrate 1.
A plurality of thick film connection conductors 5 facing each other...
... has been formed. This thick film connection conductor 5...
is formed along the bonding edge of both glass layers 3 and 4, one end of which is connected to the other end of the thick film conductor 2, and the other end is exposed on the upper surface of the first glass layer 3. are doing. That is, the thick film conductor 2...... is connected to both the glass layers 3, 4 via the thick film connection conductor 5...
It is led out onto the glass layers 3 and 4 through the gap. Further, on the upper surface of the first glass layer 3, a plurality of thick film conductors 6 are located between the thick film conductors 2 on the substrate 1.
. . . are formed, and these thick film conductors 6 . . . are for connecting current applying conductors. The thick film conductor 2 and the thick film connection conductor 5 are formed by a thick film method using gold or a gold-palladium alloy. From the surface of the second glass layer 4 to the surface of the first glass layer 3, there are a plurality of thin film conductors 7 and thin films facing the thick film conductors 2 and 6, respectively. Conductors 8... are formed alternately in parallel, and each of these thin film conductors 7......, 8
A heating resistor 9 formed on the surface of the second glass layer 4 is connected to one end. This resistor 9
...... consists of aluminum oxide, tantalum nitride, etc. The other end of the thin film conductor 7 is connected to the exposed end of the thick film connecting conductor 5, and the other end of the thin film conductor 8 is connected to the thick film conductor 6 on the first glass layer 3 surface, respectively. It is connected above. A thin film common connection conductor 10 is formed on the outer side of the second glass layer 4, and this conductor 1
0 is the thin film conductor 7 through each of the resistors 9...
. . . and the thin film conductor 8 .
These thin film conductors 7......, 8...... and conductor 1
0 is formed by a thin film method such as vapor deposition or sputtering using gold or a gold-palladium alloy. The thick film conductor 2 on the substrate 1 is the lower layer wiring, and the thick film conductor 6 on both the glass layers 3 and 4 is...
The thin film conductors 7..., 8..., and the conductor 10 serve as upper layer wiring.
この感熱ヘツドを製造するに際しては、基板１
上に厚膜導体２………を形成した後に第１ガラス
層３を形成し、第１ガラス層３の接合縁部間に厚
膜接続導体５を形成するとともに上面に厚膜導体
６を形成し、さらにこれらを焼成する。次いで基
板１上に第２ガラス層４を形成し、第２ガラス層
４と第２ガラス層３の各上面にわたつて薄膜導体
７………，８………を形成する工程となる。 When manufacturing this thermal head, the substrate 1
After forming a thick film conductor 2 on top, a first glass layer 3 is formed, a thick film connecting conductor 5 is formed between the bonding edges of the first glass layer 3, and a thick film conductor 6 is formed on the top surface. Then, these are further fired. Next, a second glass layer 4 is formed on the substrate 1, and thin film conductors 7, 8, . . . are formed over the upper surfaces of the second glass layer 4 and the second glass layer 3, respectively.
しかして、この感熱ヘツドにおいては、基板１
の同一平面上に第１ガラス層３と第２ガラス層４
を形成して絶縁層とし、基板１上に厚膜導体２…
……を形成してあるから、両ガラス層３，４上面
に導体を形成することができ、また両ガラス層
３，４間に厚膜接続導体５………を形成して厚膜
導体２………を容易に導出させてガラス層３，４
上の導体に接続できる。このため、多層配線構造
として上側導体と下側導体を互に寸法的に拘束さ
れずに形成でき、しかも上下の各導体は寸法的に
拘束されないから薄膜法でなく厚膜法で導体を形
成することができる。従つて、長さの限られた狭
い場所で多数本の厚膜導体を容易に形成すること
が可能であり、例えば１mm当り６本の厚膜導体の
形成が可能となり、これに伴つて厚膜配線の利用
範囲が拡大する。また、第１ガラス層３上面に厚
膜導体６………を形成し、第２ガラス層４上面に
薄膜導体７………，８………を形成する構成とす
れば、第１ガラス層３では厚膜導体２………，６
………による多層配線として厚膜配線の範囲を拡
大でき、第２ガラス層４では上面で薄膜導体７…
……，８………によりまとめることができる。 However, in this thermal head, the substrate 1
The first glass layer 3 and the second glass layer 4 are placed on the same plane.
is formed as an insulating layer, and a thick film conductor 2... is formed on the substrate 1.
... is formed, a conductor can be formed on the upper surfaces of both glass layers 3 and 4, and a thick film connecting conductor 5 is formed between both glass layers 3 and 4 to connect the thick film conductor 2. ...... by easily deriving the glass layers 3 and 4.
Can be connected to the upper conductor. For this reason, the upper and lower conductors can be formed as a multilayer wiring structure without being dimensionally constrained by each other, and since the upper and lower conductors are not dimensionally constrained, the conductors can be formed using a thick film method rather than a thin film method. be able to. Therefore, it is possible to easily form a large number of thick film conductors in a narrow space with limited length, for example, it is possible to form 6 thick film conductors per 1 mm, and along with this, it is possible to form a large number of thick film conductors in a narrow space with limited length. The scope of use of wiring will expand. Moreover, if the structure is such that the thick film conductor 6 is formed on the upper surface of the first glass layer 3 and the thin film conductor 7 is formed on the upper surface of the second glass layer 4, the first glass layer 3, thick film conductor 2......,6
The range of thick film wiring can be expanded as multilayer wiring by ......, and the second glass layer 4 has thin film conductors 7 on the top surface.
It can be summarized by..., 8......
なお、第１ガラス層および第２ガラス層を構成
するガラスの種類は前記実施例に限定されず、適
宜に選択して構成することができる。両ガラス層
上に形成する導体の材質、形態は実施例に限定さ
れることなく、例えば第１ガラス層上に薄膜導
体、第２ガラス層上に厚膜導体を形成しても良
い。また、感熱ヘツド用製品としてはガラス層上
に導体を形成せずにおき、ユーザが必要に応じて
導体を形成するものであつても良い。第１ガラス
層と第２ガラス層とは互に接合することが好まし
いが、互に離間するように形成することも可能で
ある。 Note that the types of glasses constituting the first glass layer and the second glass layer are not limited to those in the above embodiments, and can be appropriately selected and configured. The material and form of the conductor formed on both glass layers are not limited to those in the embodiment, and for example, a thin film conductor may be formed on the first glass layer and a thick film conductor may be formed on the second glass layer. Further, as a product for a thermal head, a conductor may not be formed on the glass layer, and the user may form a conductor as necessary. Although it is preferable that the first glass layer and the second glass layer are bonded to each other, it is also possible to form them so that they are separated from each other.
実施例
基板はアルミナで形成され、第１ガラス層は結
晶化ガラスで厚み20〜50μに形成され、第２ガラ
ス層は溶融ガラスで厚み20〜50μに形成されてい
る。基板上の厚膜導体、厚膜接続導体および第１
ガラス層上の厚膜導体は金で厚さ８〜20μに形成
されている。第２ガラス層上の薄膜導体は金で厚
み１〜３μで形成されている。Embodiment The substrate is made of alumina, the first glass layer is made of crystallized glass and has a thickness of 20 to 50 μm, and the second glass layer is made of molten glass and has a thickness of 20 to 50 μm. The thick film conductor on the substrate, the thick film connection conductor and the first
The thick film conductor on the glass layer is made of gold and has a thickness of 8 to 20 microns. The thin film conductor on the second glass layer is made of gold and has a thickness of 1 to 3 microns.
本発明の感熱ヘツドは以上発明したように、厚
膜配線を広い範囲にわたつて効果的に用いること
が出来る。 As described above, the thermal head of the present invention can effectively use thick film wiring over a wide range of areas.
第１図および第２図は各々本発明の一実施例を
示す平面図および断面図である。
１……基板、２……厚膜導体、３……第１ガラ
ス層、４……第２ガラス層、５……厚膜接続導
体、６……厚膜導体、７，８……薄膜導体、９…
…抵抗体。
FIG. 1 and FIG. 2 are a plan view and a sectional view, respectively, showing an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Substrate, 2... Thick film conductor, 3... First glass layer, 4... Second glass layer, 5... Thick film connection conductor, 6... Thick film conductor, 7, 8... Thin film conductor ,9...
...Resistor.
Claims (1)
された複数のガラス層と、このガラス層のうち所
定のガラス層の下側に位置して前記基板上に形成
された第１の厚膜導体と、前記複数のガラス層の
間に形成され前記第１の厚膜導体と接続する厚膜
接続導体と、前記所定のガラス層の上面に形成さ
れた第２の厚膜導体と、前記複数のガラス層の上
面にわたつて形成され前記厚膜接続導体と接続す
る第１の薄膜導体と、前記複数のガラス層の上面
にわたつて形成され前記第２の厚膜導体と接続す
る第２の薄膜導体と、前記複数のガラス層のうち
他のガラス層の上面において前記第１の薄膜導体
および前記第２の薄膜導体に夫々個別に接続して
独立して形成された発熱抵抗体と、前記他のガラ
ス層の上面に形成され前記発熱抵抗体を介して前
記第１の薄膜導体および前記第２の薄膜導体に共
通に接続する薄膜共通接続導体とを具備すること
を特徴とする感熱ヘツド。1. A substrate, a plurality of glass layers formed side by side on the same plane of this substrate, and a first thick film conductor formed on the substrate and located below a predetermined glass layer among the glass layers. a thick film connection conductor formed between the plurality of glass layers and connected to the first thick film conductor; a second thick film conductor formed on the upper surface of the predetermined glass layer; a first thin film conductor formed over the top surface of the glass layer and connected to the thick film connection conductor; and a second thin film formed over the top surface of the plurality of glass layers and connected to the second thick film conductor. a conductor, a heating resistor formed independently by connecting to the first thin film conductor and the second thin film conductor, respectively, on the upper surface of another glass layer among the plurality of glass layers; A heat-sensitive head comprising: a thin film common connection conductor formed on the upper surface of the glass layer and commonly connected to the first thin film conductor and the second thin film conductor via the heating resistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11489778A JPS5541268A (en) | 1978-09-19 | 1978-09-19 | Sensible heat head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11489778A JPS5541268A (en) | 1978-09-19 | 1978-09-19 | Sensible heat head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5541268A JPS5541268A (en) | 1980-03-24 |
| JPS6112787B2 true JPS6112787B2 (en) | 1986-04-10 |
Family
ID=14649372
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11489778A Granted JPS5541268A (en) | 1978-09-19 | 1978-09-19 | Sensible heat head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5541268A (en) |
-
1978
- 1978-09-19 JP JP11489778A patent/JPS5541268A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5541268A (en) | 1980-03-24 |
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