JPS6113328B2 - - Google Patents
Info
- Publication number
- JPS6113328B2 JPS6113328B2 JP57128178A JP12817882A JPS6113328B2 JP S6113328 B2 JPS6113328 B2 JP S6113328B2 JP 57128178 A JP57128178 A JP 57128178A JP 12817882 A JP12817882 A JP 12817882A JP S6113328 B2 JPS6113328 B2 JP S6113328B2
- Authority
- JP
- Japan
- Prior art keywords
- weight
- dielectric constant
- cuo
- catio
- batio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Description
産業上の利用分野
本発明は高誘電率磁器誘電体組成物に関する。
高誘電率磁器誘電体組成物は、周知の通りセラ
ミツクコンデンサ等において多用されている。
従来例の構成とその問題点
従来、高誘電率をもつた磁器誘電体としては、
チタン酸バリウムを主成分とした磁器が用いられ
ているが、誘電率が高くなるほど誘電率の温度変
化が大きくなり、誘電率が4000（25℃において）
以上になると変化率が50％以上（25℃〜85℃にお
いて）となるものであつた。また、温度変化が比
較的小さなものでは、誘電率が1500以下になるた
め容量が十分にとれないものである。
そこで本発明者等は先に、特開昭58−28103号
において、BaTiO3−CaTiO3−Nb2O5−Co2O3
（MnO2）−（CuO）成分系の高誘電率磁器誘電体
組成物を提案し、これにより誘電率が高く、広い
温度範囲に亘つて誘電率の温度変化率が小さく、
かつ交流電圧特性の良好な、すなわち交流の印加
電圧の増加に対して誘電率や誘電損失の変化が少
ないという特性が得られることを明らかにした。
すなわち、この組成物は、チタン酸バリウム
（BaTiO3）87.6〜96.1％、チタン酸カルシウム
（CaTiO3）1.5〜9.7重量％、五酸化ニオブ
（Nb2O5）1.9〜3.7重量％の固溶体を基本組成と
し、これに副成分として主成分に対して酸化コバ
ルト（Co2O3）、二酸化マンガン（MnO2）の内少
くとも１種を合計量で0.3〜0.5重量％、酸化銅
（CuO）を０〜0.5重量％添加含有して高誘電率磁
器誘電体組成物である。
ここで、BaTiO3、CaTiO3、Nb2O5、Co2O3、
CuOのそれぞれの成分範囲を限定した理由は、
次の通りである。まず、CaTiO3が1.5重量％未満
では交流電圧特性を改善する効果が弱く、また
CaTiO3が9.7重量％を越えた場合には、室温にお
ける誘電率が低下し、高温（125℃付近）におけ
る誘電率も低下し、誘電率の温度特性が悪くな
る。そしてNb2O5が1.9重量％未満では交流電圧
特性が悪くなり、Nb2O5が3.7重量％を越えた場
合には室温における誘電率が低下する。また、
BaTiO3は、CaTiO3とNb2O5によりその範囲が定
められる。さらに、Co2O3が0.3重量未満では、
誘電率が低温側（−55℃付近）で大きく、高温側
（125℃付近）で低下し、誘電率の温度特性が悪く
なる。Co2O3が0.5重量％を超えた場合には、交
流電圧特性が悪くなる。MnO2はCo2O3と同様に
作用する。また、CuOの添加により誘電率は少
し低下するが、交流電圧特性の改善および高温側
（125℃付近）での誘電率の改善効果がある。そし
て、CuOが0.5重量％を超えた場合には、誘電率
の低下が著しい。
この様に先に提案した組成物は、上記組成範囲
内のBaTiO3−CaTiO3−Nb2O5−Co2O3（MnO2）
−（CuO）成分系によつて、誘電率が高く、広い
温度範囲に亘つて誘電率の温度変化率が小さく、
交流電圧特性の良好な特性を得たものである。
しかし、かかる成分系でも抗折強度が十分でな
いことや、CuOを添加した組成では絶縁抵抗が
低下するという欠点があつた。積層チツプコンデ
ンサは、プリント基板にハンダ付けして用いられ
ることが多く、熱によりプリント基板がそつた時
に、積層チツプコンデンサに曲げ応力が働く。そ
こで、抗折強度の大きな材料が望まれるのであ
る。また、絶縁抵抗に関して、容量と抵抗の積が
500MΩ・μＦ以上という規格がある。
発明の目的
本発明はかかる問題点に鑑み、高い誘電率を有
し、温度に対する誘電率の変化が少なく、かつ交
流電圧特性が良好で、抗折強度の大きな高誘電率
磁器誘電体組成物を提供することを目的とする。
発明の構成
本発明は、このため上記組成範囲のBaTiO3−
CaTiO3−Nb2O5−Co2O3（MnO2）−（CuO）成分
系に酸化ケイ素（SiO2）を０〜0.5重量％（たゞ
し、０を除く）添加含有させることにより、前記
成分系高誘電率磁器誘電体組成物の抗折強度を増
大し、かつ絶縁抵抗を向上させるものである。
実施例の説明
以下、本発明の実施例を説明する。
実施例 １
BaTiO3とCaTiO3とNb2O5をそれぞれ、94.4重
量％、2.8重量％、2.8重量％とし、これら主成分
に対してCo2O3を0.45重量％、CuOを0.2重量％、
これにさらにSiO2をそれぞれ０、0.2、0.5、0.8
重量％添加した組成について、直径約10.8mm、厚
さ約0.3mmの円板で電気特性を調べ、長さ約38
mm、巾約10.6mm、厚さ約1.8mmの角板でスパン25
mmの３点曲げて抗折強度を測定した。その結果を
第１表に示す。
INDUSTRIAL APPLICATION FIELD OF THE INVENTION The present invention relates to high permittivity porcelain dielectric compositions. As is well known, high permittivity ceramic dielectric compositions are widely used in ceramic capacitors and the like. Conventional structure and its problems Conventionally, as a porcelain dielectric material with a high dielectric constant,
Porcelain whose main component is barium titanate is used, but the higher the dielectric constant, the greater the temperature change in the dielectric constant, and the dielectric constant is 4000 (at 25 degrees Celsius).
When the temperature was higher than that, the rate of change was 50% or more (at 25°C to 85°C). Furthermore, if the temperature change is relatively small, the dielectric constant will be less than 1500, so that sufficient capacitance cannot be obtained. Therefore, the present inventors previously proposed BaTiO 3 −CaTiO 3 −Nb 2 O 5 −Co 2 O 3 in Japanese Patent Application Laid-Open No. 58-28103.
We proposed a high permittivity ceramic dielectric composition based on (MnO 2 )-(CuO) components, which has a high permittivity and a small temperature change rate of permittivity over a wide temperature range.
It was also revealed that good AC voltage characteristics were obtained, that is, the change in dielectric constant and dielectric loss was small as the applied AC voltage increased. That is, this composition is based on a solid solution of 87.6 to 96.1% barium titanate ( BaTiO3 ), 1.5 to 9.7% by weight of calcium titanate ( CaTiO3 ), and 1.9 to 3.7 % by weight of niobium pentoxide ( Nb2O5 ). The composition is made up of a total of 0.3 to 0.5% by weight of at least one of cobalt oxide (Co 2 O 3 ) and manganese dioxide (MnO 2 ), and copper oxide (CuO) as subcomponents based on the main component. It is a high dielectric constant ceramic dielectric composition containing 0 to 0.5% by weight. Here, BaTiO 3 , CaTiO 3 , Nb 2 O 5 , Co 2 O 3 ,
The reason for limiting the range of each component of CuO is
It is as follows. First, if CaTiO 3 is less than 1.5% by weight, the effect of improving AC voltage characteristics is weak;
When CaTiO 3 exceeds 9.7% by weight, the dielectric constant at room temperature decreases, the dielectric constant at high temperature (near 125° C.) also decreases, and the temperature characteristics of the dielectric constant deteriorate. If Nb 2 O 5 is less than 1.9% by weight, the AC voltage characteristics deteriorate, and if Nb 2 O 5 exceeds 3.7% by weight, the dielectric constant at room temperature decreases. Also,
BaTiO 3 is delimited by CaTiO 3 and Nb 2 O 5 . Furthermore, if Co 2 O 3 is less than 0.3 wt.
The dielectric constant is large on the low temperature side (near -55℃) and decreases on the high temperature side (near 125℃), resulting in poor temperature characteristics of the dielectric constant. When Co 2 O 3 exceeds 0.5% by weight, AC voltage characteristics deteriorate. MnO2 acts similarly to Co2O3 . Furthermore, although the dielectric constant decreases slightly due to the addition of CuO, it has the effect of improving AC voltage characteristics and improving the dielectric constant at high temperatures (near 125°C). When CuO exceeds 0.5% by weight, the dielectric constant decreases significantly. In this way, the previously proposed composition contains BaTiO 3 −CaTiO 3 −Nb 2 O 5 −Co 2 O 3 (MnO 2 ) within the above composition range.
-(CuO) component system has high dielectric constant and small temperature change rate of dielectric constant over a wide temperature range.
Good AC voltage characteristics were obtained. However, even with such a component system, there were drawbacks such as insufficient flexural strength and a decrease in insulation resistance in compositions containing CuO. Multilayer chip capacitors are often soldered onto printed circuit boards, and when the printed circuit board warps due to heat, bending stress is applied to the multilayer chip capacitors. Therefore, a material with high flexural strength is desired. Regarding insulation resistance, the product of capacitance and resistance is
There is a standard of 500MΩ・μF or more. Purpose of the Invention In view of these problems, the present invention provides a high-permittivity ceramic dielectric composition that has a high dielectric constant, has little change in dielectric constant with respect to temperature, has good AC voltage characteristics, and has high bending strength. The purpose is to provide. Structure of the Invention For this reason, the present invention provides BaTiO 3 −
By adding 0 to 0.5% by weight (excluding 0) of silicon oxide (SiO2) to the CaTiO3-Nb2O5 - Co2O3 ( MnO2 ) - (CuO) component system, It is intended to increase the bending strength and improve the insulation resistance of the component-based high permittivity ceramic dielectric composition. Description of Examples Examples of the present invention will be described below. Example 1 BaTiO 3 , CaTiO 3 and Nb 2 O 5 were respectively 94.4% by weight, 2.8% by weight and 2.8% by weight, and based on these main components, Co 2 O 3 was 0.45% by weight, CuO was 0.2% by weight,
In addition, SiO 2 was added to 0, 0.2, 0.5, and 0.8, respectively.
The electrical properties of a disk with a diameter of about 10.8 mm and a thickness of about 0.3 mm were investigated for the composition containing % by weight, and the length was about 38 mm.
mm, width approx. 10.6mm, thickness approx. 1.8mm square plate with span 25
The bending strength was measured by bending at three points of mm. The results are shown in Table 1.
【表】
実施例 ２
BaTiO3とCaTiO3とNb2O5をそれぞれ、93.5重
量％、3.7重量％、2.8重量％とし、これら主成分
に対してCo2O3を0.4重量％、CuOを0.1重量％、
これにさらにSiO2をそれぞれ、０、0.2、0.5、
0.8重量％添加した組成について、実施例１と同
様の測定を行なつた結果を第２表に示す。[Table] Example 2 BaTiO 3 , CaTiO 3 , and Nb 2 O 5 were respectively 93.5% by weight, 3.7% by weight, and 2.8% by weight, and Co 2 O 3 was 0.4% by weight and CuO was 0.1% by weight based on these main components. weight%,
In addition, SiO 2 was added to 0, 0.2, 0.5,
Table 2 shows the results of the same measurements as in Example 1 for the composition containing 0.8% by weight.
【表】
第１表及び第２表から明らかな様に、SiO2を
添加含有することにより抗折強度が大きくなり、
かつ絶縁抵抗が大きくなり、BaTiO3−CaTiO3−
Nb2O5−Co2O2（MnO2）−（CuO）の成分系で特
性を改善することができる。SiO2の添加量が0.5
重量％を越える誘電率の低下が著しくなるので、
本発明の目的を達成できない。SiO2の添加量が
０〜0.5重量％の範囲では、誘電率の温度特性お
よび交流電圧特性も大きく変わることはなかつ
た。
発明の効果
本発明の高誘電率磁器誘電体組成物によれば、
以上説明から明らかな様に、BaTiO3−CaTiO3−
Nb2O5−Co2O3（MnO2）−（CuO）成分系にSiO2
を適当量添加することにより、添加しない場合の
特性を損うことなく、抗折強度を増大させ、かつ
絶縁抵抗を向上させることができ、特に積層チツ
プコンデンサ等の材料として工業的価値が大であ
る。[Table] As is clear from Tables 1 and 2, the addition of SiO 2 increases the bending strength.
And the insulation resistance increases, BaTiO 3 −CaTiO 3 −
The properties can be improved with a component system of Nb 2 O 5 −Co 2 O 2 (MnO 2 )−(CuO). Addition amount of SiO 2 is 0.5
Since the dielectric constant decreases significantly by more than % by weight,
The purpose of the present invention cannot be achieved. When the amount of SiO 2 added was in the range of 0 to 0.5% by weight, the temperature characteristics and AC voltage characteristics of the dielectric constant did not change significantly. Effects of the Invention According to the high permittivity ceramic dielectric composition of the present invention,
As is clear from the above explanation, BaTiO 3 −CaTiO 3 −
SiO 2 in the Nb 2 O 5 −Co 2 O 3 (MnO 2 )−(CuO) component system
By adding an appropriate amount of , it is possible to increase the bending strength and improve the insulation resistance without impairing the properties when not added, and it has great industrial value, especially as a material for multilayer chip capacitors. be.
Claims (1)
量％、チタン酸カルシウム（CaTiO3）1.5〜9.7
重量％、五酸化ニオブ（Nb2O5）1.9〜3.7重量％
の固溶体を基本組成とし、これに副成分として主
成分に対して、酸化コバルト（Co2O3）、二酸化
マンガン（MnO2）の内の少くとも１種を合計量
で0.3〜0.5重量％、酸化銅（CuO）を０〜0.5重量
％、酸化ケイ素（SiO2）を０〜0.5重量％（たゞ
し、０を除く）添加含有してなる高誘電率磁器誘
電体組成物。1 Barium titanate (BaTiO 3 ) 87.6-96.1% by weight, calcium titanate (CaTiO 3 ) 1.5-9.7
wt%, niobium pentoxide (Nb 2 O 5 ) 1.9-3.7 wt%
The basic composition is a solid solution of 0.3 to 0.5% by weight of at least one of cobalt oxide (Co 2 O 3 ) and manganese dioxide (MnO 2 ) as a subcomponent based on the main component. A high permittivity ceramic dielectric composition containing 0 to 0.5% by weight of copper oxide (CuO) and 0 to 0.5% by weight (excluding 0) of silicon oxide ( SiO2 ).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57128178A JPS5918506A (en) | 1982-07-21 | 1982-07-21 | High dielectric constant porcelain diselectric composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57128178A JPS5918506A (en) | 1982-07-21 | 1982-07-21 | High dielectric constant porcelain diselectric composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5918506A JPS5918506A (en) | 1984-01-30 |
| JPS6113328B2 true JPS6113328B2 (en) | 1986-04-12 |
Family
ID=14978342
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57128178A Granted JPS5918506A (en) | 1982-07-21 | 1982-07-21 | High dielectric constant porcelain diselectric composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5918506A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0512997Y2 (en) * | 1989-12-14 | 1993-04-06 | ||
| DE4215638C2 (en) * | 1991-05-13 | 1997-04-10 | Murata Manufacturing Co | Dielectric, ceramic composition |
| DE4220681C2 (en) * | 1991-06-27 | 1995-09-14 | Murata Manufacturing Co | Non-reducing, dielectric, ceramic composition |
-
1982
- 1982-07-21 JP JP57128178A patent/JPS5918506A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5918506A (en) | 1984-01-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2019182736A (en) | Dielectric composition and electronic component | |
| JPS6113328B2 (en) | ||
| JPH0414442B2 (en) | ||
| US3969252A (en) | Dielectric ceramic compositions of BaTiO3 -BaZrO3 -CaTiO3 system | |
| JPS59154703A (en) | High dielectric constant porcelain composition | |
| JPS5920905A (en) | High dielectric contact porcelain composition | |
| KR20000070662A (en) | Dielectric ceramic composition | |
| JPS6249977B2 (en) | ||
| KR930014640A (en) | High dielectric constant magnetic composition | |
| JPS6116132B2 (en) | ||
| JP3179830B2 (en) | Dielectric porcelain composition | |
| JPS5828103A (en) | High dielectric porcelain dielectric composition | |
| JP2789110B2 (en) | High dielectric constant porcelain composition | |
| JPS6046811B2 (en) | Composition for semiconductor ceramic capacitors | |
| JPH0118522B2 (en) | ||
| JPS6129903B2 (en) | ||
| JP3656860B2 (en) | Non-reducing dielectric ceramic composition | |
| JPS60240006A (en) | High dielectric ceramic compoment | |
| JP3404897B2 (en) | Ceramic composition and capacitor | |
| JP2643197B2 (en) | Dielectric porcelain composition | |
| JP3478628B2 (en) | Semiconductor ceramic composition for grain boundary insulating layer type semiconductor capacitor and grain boundary insulating layer type semiconductor capacitor using the same | |
| JPH0317326B2 (en) | ||
| JPS6249976B2 (en) | ||
| JP3333017B2 (en) | Dielectric ceramic composition for temperature compensation | |
| JPS62111412A (en) | Compound for insulated grain boundary type semiconductor porcelain capacitor |