JPS6113378B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention provides a semiconductor device that improves productivity and integration by improving the connection method between the electrodes and lead conductors of a semiconductor element having an electrode on one main surface. It is related to.

Below, we will discuss short-barrier type power field effect transistors (hereinafter referred to as "high-power field effect transistors") used in high-frequency circuits.
This will be explained using an example of "SBFET".

FIG. 1 is a plan view of an example of a conventional high-output SBFET. As shown in FIG. 1, a conventional high-power SBFET has a structure in which a large number of three types of electrodes, a source electrode 2, a gate electrode 3, and a drain electrode 4, are arranged alternately on one main surface of a semiconductor substrate 1. ing.
The bonding wires 5 electrically connect the plurality of source electrodes 2 to each other or the source electrodes 2 and the source bonding area 6 of the package. The same applies to the bonding area 7 between the gate electrodes 3 or between the gate electrode 3 and the package, and the drain bonding area 8 between the drain electrodes 4 or between the drain electrodes 4 and the package. 10 is a semiconductor element constituted by a semiconductor substrate 1, a source electrode 2, a gate electrode 3, and a drain electrode 4.

In such a high-output SBFET, in order to increase the output power, it is necessary to increase the number of arrays, and in that case, in the conventional configuration shown in FIG. 1, the number of bonding wires 5 increases. There was a problem that bonding work time increased and productivity decreased.

Furthermore, since the electrode dimensions depend on the wire diameter of the bonding wire, there is a limit to how much they can be reduced, and there is a drawback that the degree of integration is low.

The present invention has been made in view of the above points, and includes a plurality of ribbon-shaped conductors that are substantially on the same plane, and a first and second electrode that has a plurality of protruding electrodes arranged on one principal surface. a second semiconductor element, the first semiconductor element and the second semiconductor element face each other with electrode arrangement surfaces facing inward, and the first semiconductor element and the second semiconductor element A part of each of the ribbon-shaped conductors is sandwiched between them, and each of the protruding electrodes of the first and second semiconductor elements is adhered to any of the plurality of ribbon-shaped conductors. The object of the present invention is to provide a semiconductor device with improved productivity and degree of integration.

The present invention will be explained below based on examples.
FIG. 2 is a perspective view showing a high-output SBFET, which is an example of a semiconductor device that is one of the constituent elements of the present invention, and FIG. FIG. 4 is a perspective view showing a state in which one ribbon-like conductor is adhered to each of the ribbon-like conductors, and FIG. FIG. In Figures 2 to 4,
The same reference numerals as in FIG. 1 represent the same components as shown in FIG. 10a is a first semiconductor element, 10b is a second semiconductor element, and 21, 31, and 41 are source protrusion electrodes and gate protrusion electrodes formed by thickening required portions of the source electrode 2, gate electrode 3, and drain electrode 4, respectively. and drain protrusion electrodes 51, 52, and 53 are made of gold ribbon wires, etc., and each have a plurality of source protrusion electrodes 2.
1, first, second and third ribbon-shaped conductors bonded to the gate protrusion electrode 31 and the drain protrusion electrode 41;

The main steps related to the main points of the present invention in one example of the method for manufacturing the above-mentioned high-output SBFET will be described next.

First, as shown in FIG. 2, functional regions such as a source region, a gate region, and a drain region are formed inside using a method similar to the conventional method, and a source electrode 2, a gate electrode 3, and a drain electrode 4 are formed on one main surface. Required portions of each electrode of the semiconductor element thus prepared are built up by plating or the like to form a source protrusion electrode 21, a gate protrusion electrode 31, and a drain protrusion electrode 41 to form the first semiconductor element 10a. Next, the third
As shown in the figure, first, second, and third ribbon-shaped conductors 51, 52, and 53 are bonded onto a plurality of source protruding electrodes 21, gate protruding electrodes 31, and drain protruding electrodes 41, respectively, to form lead conductors. form. Subsequently, a second semiconductor element 10b having the same configuration as the first semiconductor element 1a is manufactured, and as shown in FIG.
1. Gate protrusion electrode 31 and gate protrusion electrode 4
1 to the upper surfaces of the first, second and third ribbon-shaped conductors 51, 52, 53 in the state shown in FIG.
SBFET is completed.

High output of the embodiment configured as above
SBFETs do not require complicated wire bonding operations even when increasing the electrode array, resulting in significantly improved productivity compared to conventional equipment. Furthermore, in the example device, since the protruding electrodes of multiple electrodes of the same type are bonded to the ribbon-shaped conductor all at once, the electrode dimensions can be reduced, the degree of integration is improved, and the device can be made smaller than the conventional device. It has advantages.

In the above manufacturing process, the two semiconductor elements and the ribbon-shaped conductor were bonded individually, but the same structure can be obtained even if the ribbon-shaped conductor is sandwiched between both semiconductor elements and bonded at the same time. It will be done.

In addition, in the above embodiment, the present invention is applied to high output power.
Although the case where the present invention is applied to an SBFET has been described, the present invention is not limited thereto, and can also be applied to bipolar transistors, MOS transistors, various types of diodes, and the like.

Furthermore, in the above embodiment, a case was described in which two semiconductor elements of the same type were bonded to both main surfaces of a ribbon-shaped conductor with electrodes of the same type corresponding to each other. Different semiconductor elements may be mixed and adhered to both main surfaces of the ribbon-shaped conductor.

As explained above, the semiconductor device according to the present invention includes a plurality of ribbon-shaped conductors that are substantially on the same plane, and a plurality of first and second electrodes that are arranged in a projection shape on one main surface. the first semiconductor element and the second semiconductor element face each other with their electrode arrangement surfaces facing inward, and there is a gap between the first semiconductor element and the second semiconductor element. Since the structure is such that a part of each of the ribbon-shaped conductors is sandwiched and each of the protruding electrodes of the first and second semiconductor elements is adhered to one of the plurality of ribbon-shaped conductors, it is not complicated. Since wire bonding work is not required, productivity can be improved and the degree of integration can be improved, which has a great practical advantage.

[Brief explanation of the drawing]

FIG. 1 is a plan view of an example of a conventional high-output SBFET, FIG. 2 is a perspective view of a high-output SBFET, which is an example of a semiconductor element that is one of the components of the present invention, and FIG. FIG. 4 is a perspective view showing a state in which a ribbon-shaped conductor is adhered to the semiconductor element shown in the figure, and FIG. 4 is a perspective view showing the appearance of an embodiment of the present invention. In the figure, 1 is a semiconductor substrate, 2 is a source electrode, 3 is a gate electrode, 4 is a drain electrode, and 10
10b are semiconductor elements, 21 is a source protrusion electrode, 31 is a gate protrusion electrode, 41 is a drain protrusion electrode, and 51, 52, and 53 are ribbon-shaped conductors. Note that the same reference numerals in the figures indicate the same or corresponding parts.

Claims (1)

[Claims] 1 comprising a plurality of ribbon-shaped conductors that are substantially on the same plane, and first and second semiconductor elements in which a plurality of electrodes are arranged in a protrusion shape on one main surface,
A first semiconductor element and a second semiconductor element face each other with electrode arrangement surfaces facing inward, and each ribbon-shaped conductor is disposed between the first semiconductor element and the second semiconductor element. A semiconductor device, wherein each of the protruding electrodes of the first and second semiconductor elements is adhered to one of the plurality of ribbon-shaped conductors with a portion sandwiched therebetween.