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JPS6116044B2 - - Google Patents
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JPS6116044B2 - - Google Patents

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Publication number
JPS6116044B2
JPS6116044B2 JP8865780A JP8865780A JPS6116044B2 JP S6116044 B2 JPS6116044 B2 JP S6116044B2 JP 8865780 A JP8865780 A JP 8865780A JP 8865780 A JP8865780 A JP 8865780A JP S6116044 B2 JPS6116044 B2 JP S6116044B2
Authority
JP
Japan
Prior art keywords
transparent body
refractive index
polarized light
thin film
light beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP8865780A
Other languages
Japanese (ja)
Other versions
JPS5714810A (en
Inventor
Masataka Shirasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8865780A priority Critical patent/JPS5714810A/en
Publication of JPS5714810A publication Critical patent/JPS5714810A/en
Publication of JPS6116044B2 publication Critical patent/JPS6116044B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/30Polarising elements

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

本発明は、光導波板をもつ光導波装置の位相整
合膜、特に屈折率n0で与えられる透明板中を光ビ
ームが反射を繰返して導波されるよう構成すると
共に該反射によつて生じるP偏光成分とS偏光成
分との位相ずれを実質上等しくするようにした光
導波板をもつ光導波装置の位相整合膜に関するも
のである。 従来から電気光学結晶の光導波体を用いて、例
えば光スイツチやフアラデー回転子を含む光変調
器を構成することが行なわれる。第1図はその概
念的構成を示し、符号1は透明体、2,2′は透
明体の例えば上下面にもうけた電極、3は電源、
4,5は夫々必要に応じてもうけられるプリズム
を表わしている。 このような光変調器においては、電極2,2′
間に電圧を印加することによつて偏光を制御する
ものであるが、所定量の位相制御により所望の偏
光を得るためには、図示厚さdを小にし、長手方
向の距離lを大にし、かつ電源3の電圧を大に選
ぶことが望まれる。しかし、上記電源電圧を比較
的小にした上で上記所望の偏光を得ようとする
と、例えば上記厚さdを200μm、距離lを2cm
程度に選ぶことが必要となり、値l/dが非常に
大となる。一方、透明体1に入射される光ビーム
は該透明体1の断面に対して直角に入射されるよ
うにされるが、光ビームの径に反比例して光ビー
ムが拡大する傾向をもち、上記の如く値l/dを
大に選ぶと次の如き問題が新らたに生じる。即
ち、値l/dを大に選ぶと、上記光ビームの拡大
が不可避なものであることから、必然的に透明体
1内において生じる反射回数が大となる。このと
き、一般に反射時に、光ビーム中に含まれるP偏
光成分とS偏光成分とで位相ずれが生じる。 第2図は入射角を横軸に示したP偏光成分とS
偏光成分との夫々の入射光と反射光との位相ずれ
を表わしている。上記透明体1内において生じる
反射は入射角が90゜近傍になるものであるが、第
2図から判る如く、入射角が87゜程度であるとし
ても、1回の反射によつて、入射光内におけるP
偏光成分とS偏光成分との位相差Δに対して反射
光内におけるそれが変化することとなる。そして
反射回数が増加するにつれて上記変化が大とな
る。 このために、上記値l/dを大に選ぶ上で限界
が生じ、換言すれば上記電源電圧を大にする必要
が生じることとなる。 本発明者らは上記の点を解決することを目的と
して、屈折率n0で与えられる透明体に対して当該
透明体の断面に直角な方向に光ビームを導入し、
上記透明体の境界において反射を繰返して上記光
ビームを導波する光導波装置において、上記透明
体を厚さdに対して光導波方向の距離lを大に選
んだ透明板体に構成すると共に、該透明板体の厚
み方向の上下両面に夫々例えば上記透明板の屈折
率n0よりも大きい屈折率n1をもつ薄膜と該薄膜上
に該第1の薄膜の屈折率n1よりも小さい屈折率n2
をもつ物質とを順に被着した構造等を有する光学
薄膜手段を設け、上記導入された光ビームが上記
反射を繰返す際に当該光ビーム中に含まれるP偏
光成分とS偏光成分との間の当該反射にもとづく
位相ずれを実質上等しくした光導波装置を既に出
願している。以下図面を参照しつつこの既出願の
内容を説明する。 第3図に示す如く屈折率n1の物質と屈折率n2
(n1>n2)の物質との境界6に対して入射角をも
つて入射されたP偏光成分とS偏光成分との夫々
の位相ずれΔpとΔsとは次の如く表わされる。 また、第4図に示すような厚さtの薄膜7内の
多重の反射によつても位相ずれが生じ、結局のと
ころ、こうして位相のずれを総合して、その正接
をもつて表わすと次のようになる。
The present invention is directed to a phase matching film of an optical waveguide device having an optical waveguide plate, in particular a transparent plate having a refractive index n 0 , in which a light beam is guided through repeated reflections, and the light beams generated by the reflections are guided. The present invention relates to a phase matching film of an optical waveguide device having an optical waveguide plate in which the phase shift between a P-polarized light component and an S-polarized light component is made substantially equal. Conventionally, electro-optic crystal optical waveguides have been used to construct optical modulators including, for example, optical switches and Faraday rotators. Fig. 1 shows its conceptual configuration, where 1 is a transparent body, 2 and 2' are electrodes provided on the top and bottom surfaces of the transparent body, 3 is a power source,
4 and 5 each represent a prism that can be provided as required. In such an optical modulator, the electrodes 2, 2'
Polarization is controlled by applying a voltage between the two, but in order to obtain the desired polarization by controlling the phase by a predetermined amount, the illustrated thickness d should be made small and the longitudinal distance l should be made large. , and it is desirable to select a large voltage for the power supply 3. However, when trying to obtain the desired polarized light while making the power supply voltage relatively low, for example, the thickness d is 200 μm and the distance l is 2 cm.
Therefore, the value l/d becomes very large. On the other hand, the light beam incident on the transparent body 1 is made to be incident at right angles to the cross section of the transparent body 1, but the light beam tends to expand in inverse proportion to the diameter of the light beam. If the value l/d is chosen to be large, the following problem arises. That is, if the value l/d is chosen to be large, the number of reflections that occur within the transparent body 1 will inevitably increase, since the expansion of the light beam is unavoidable. At this time, generally upon reflection, a phase shift occurs between the P-polarized light component and the S-polarized light component contained in the light beam. Figure 2 shows the P polarization component and the S polarization component with the incident angle shown on the horizontal axis.
It represents the phase shift between the incident light and the reflected light, respectively, with respect to the polarized light component. The reflection that occurs within the transparent body 1 has an incident angle of around 90°, but as can be seen from Fig. 2, even if the incident angle is about 87°, one reflection can reduce the amount of incident light. P in
The phase difference Δ between the polarized light component and the S-polarized light component changes in the reflected light. The above change becomes larger as the number of reflections increases. For this reason, there is a limit in selecting a large value l/d, in other words, it becomes necessary to increase the power supply voltage. The present inventors aimed to solve the above points by introducing a light beam into a transparent body given by the refractive index n 0 in a direction perpendicular to the cross section of the transparent body,
In the optical waveguide device that guides the light beam by repeating reflection at the boundary of the transparent body, the transparent body is configured as a transparent plate body in which the distance l in the optical waveguide direction is selected to be large relative to the thickness d; , a thin film having a refractive index n 1 larger than the refractive index n 0 of the transparent plate, for example, on both upper and lower surfaces in the thickness direction of the transparent plate, and a refractive index n 1 smaller than the first thin film on the thin film, respectively. refractive index n 2
An optical thin film means having a structure in which a substance having a An application has already been filed for an optical waveguide device in which the phase shift caused by the reflection is made substantially equal. The contents of this existing application will be explained below with reference to the drawings. As shown in Figure 3, a material with a refractive index of n 1 and a material with a refractive index of n 2
The respective phase shifts Δp and Δs between the P-polarized light component and the S-polarized light component incident on the boundary 6 with the substance (n 1 >n 2 ) at an incident angle are expressed as follows. In addition, phase shifts occur due to multiple reflections within the thin film 7 having a thickness of t as shown in FIG. become that way.

【表】 (但し、ξpはP偏光成分の位相ずれ角、kp
はP偏光成分の反射係数rpと、θ=χ/2−φ≪1 との1次近似式rp=kpθ−1における係数、δ
pは1回の薄膜7内の反射で生ずるP偏光成分の
位相ずれであり、またξs,ks,δsは夫々ξ
p,kp,δpに対応するS偏光成分についての
同様な値である。) ここで、P偏光成分の位相ずれξpとS偏光成
分の位相ずれξsとを相等しくするためには、次
式を満足させることになる。 kp/ks=sinδs(1−cosδp)/sin
δp(1−cosδs)―――(3) さて、式(3)の左辺はn0/n1で定まり、右辺は
n0/n1,n2/n1,n0,tで定まるので、例えば
n2,tを選択することにより、式(3)を満足させる
ことができる。一例としては次のものが考えられ
る。
[Table] (However, ξp is the phase shift angle of the P polarized light component, kp
is the coefficient in the linear approximation rp=kpθ-1 between the reflection coefficient rp of the P-polarized light component and θ=χ/2-φ≪1, δ
p is the phase shift of the P polarized light component caused by one reflection within the thin film 7, and ξs, ks, and δs are each ξ
Similar values are for the S polarization components corresponding to p, kp, and δp. ) Here, in order to make the phase shift ξp of the P-polarized light component and the phase shift ξs of the S-polarized light component equal to each other, the following equation must be satisfied. kp/ks=sin δs(1-cos δp)/sin
δp(1-cosδs)---(3) Now, the left side of equation (3) is determined by n 0 /n 1 , and the right side is
It is determined by n 0 /n 1 , n 2 /n 1 , n 0 , t, so for example
By selecting n 2 and t, equation (3) can be satisfied. The following may be considered as an example.

【表】 の如くなる。 第5図は、上記第4図に関連して説明した原理
を導入した光導波装置を示している。図中の符号
1,7,8は夫々第4図に対応しており、9は入
力光ビーム、10は出力光ビームを表わしてい
る。 この光導波装置は、第5図図示の如く厚さdを
もち、長さlをもつ透明体(透明板体)をもち、
その厚さ方向の上下両面に厚さtをもつ第1の薄
膜7が被着され、更にその上に所望の厚さの第2
の薄膜8が被着される。 第5図図示の光導波装置に対して入力光ビーム
9を入射すると、第5図図中に反射を示している
如く光導波装置の上下両面において反射が繰返さ
れて出力光ビーム10として出力されることとな
る。そしてこの反射に当つては第4図を参照して
説明した如く入射角φがπ/2に近い場合にP偏光成 分とS偏光成分との位相ずれが変化しないような
条件が与えられている。 第6図A,Bは夫々第5図図示の光導波装置内
を大にとることによつて印加する電源電圧を十分
小さい値例えば20V程度にとることが可能とな
る。 しかしながら、第5図に示す位相整合膜は、波
長の変化によつて位相ずれが大きく変化し、また
反射角が90゜からずれても位相ずれが大きく変化
する不都合があつた。 そこで、本発明はこのような位相ずれの変化が
小さな位相整合膜を提供することを目的としてい
る。 この目的は本発明においては、透明体の厚み方
向と略直交する方向に導入された光ビームを繰返
し反射する厚み方向と垂直な上記透明体の境界面
に形成され、上記光ビームのP偏光成分とS偏光
成分との位相ずれを補償する位相整合膜におい
て、3層の光学薄膜より構成され、上記透明体側
から数えて第1、第3の層の屈折率が透明体の屈
折率より小さく、第2の層の屈折率が透明体の屈
折率より大きいことを特徴とする位相整合膜によ
り達成される。 第7図は本発明の一実施例を示す図であり、第
8図は第7図の位相整合膜の波長特性と第5図の
ものの同特性とを示す図、第9図は第7図の位相
整合膜の入射角特性と第5図のものの同特性を示
す図である。 本発明においては、第7図に示すように、透明
体2から第1層の薄膜16に向う光ビームは、全
反射条件を満す。つまり、第1層の薄膜16の屈
折率n1は透明体2の屈折率n0より小となつてい
る。例えば、透明体として、電気光学結晶
Bi12SiO20を用いた場合、n0=2.405であるから、
第1層の薄膜16としては例えば屈折率が1.45で
ある二酸化ケイ素を用いることができる。 ところで、入射角および屈折率の関係がこのよ
うに全反射条件を満足しても、上記第1層の薄膜
16は表面波を完全に減衰する程度の大きな膜厚
を有していない。従つて、トンネル効果として知
られているように、第1層の薄膜16を通過する
光ビームが存在する。 こうして、第2層の薄膜17内に達した光ビー
ムは、次に第2層の薄膜17と第3層の薄膜18
との境界で、その屈折率の大小関係(n3<n0
n2)により全反射される。このときには、第3層
の薄膜18の膜厚を十分大きくしている。具体的
には、第2層はシランガスを分解して得たシリコ
ン層、屈折率3.55であり、第3層の薄膜は二酸化
ケイ素、屈折率1.45、厚さ10000Å以上としても
よい。 このような各境界面における光ビームの挙動を
あわせて、全体的にみると、透明体2からの光ビ
ームの一部がトンネル効果により第1層の薄膜1
6を抜けて第2層の薄膜17内でつづれ折り状に
多重反射し、また第2層17からトンネル効果に
よりこれらの多重反射された光ビームが再び透明
体2に戻るようになる。 そして、このような一連の過程を経て光ビーム
と、単に透明体2と第1層の薄膜16間境界で反
射された光ビームとが合成される。 そこで、両者の光ビームそれぞれにおけるP偏
光成分とS偏光成分との間の位相ずれを適当な
値、つまり単振動合成をした場合に相互に打ち消
されて零となるとしている。この場合、例えば第
1層および第2層の薄膜の膜厚を変化させること
により、第1層を介して透明体2に再入射され光
ビームにおいてのP偏光成分とS偏光成分の位相
ずれおよび振幅を変化させることができ、これに
よつて上記両ビームの合成ビームにおける偏光成
分間の位相ずれを打消すことができる丁度よい値
に設定すればよい。 一例として、中心波長が1.3μmの光ビームを
用い電気光学結晶Bi12SiO20,n0=2.405を使用
し、第1層SiO2,n1=1.45、厚さ950Å;第2層
Si(H含む)、n2=3.55、厚さ1820Å;第3層
SiO2,n3=1.45、厚さ10000Å(3000Å以上なら
任意)とする場合には、第8図および第9図に示
す特性が得られる。すなわち、第8図は波長に対
する位相ずれの変化を示すものであり、実線が第
7図に示す構成のもの、破線が第5図に示す構成
のものに対応している。図示により明らかである
ように、本発明に基づくもの(実線)は、第5図
に示す改良前のもの(破線)に比らべ広い波長帯
域で位相ずれを低く抑制することができる。 また、第9図は入射角(透明体2と第1層の薄
膜16との界面に対し、透明体2側から光ビーム
を入射するようにしたときの角度)に対する位相
ずれの変化を示すものであり、実線が第7図に示
す構成のもの、破線が第5図に示す構成のものに
対応している。 この図から、本発明に基づくもの(実線)は、
改良前のもの(破線)に比らべ、広い入射角範囲
で位相ずれを低く抑止することができる。 なお、本発明は以上の実施例に示す、透明体材
および薄膜材料に限定されるものでなく、任意の
材料を用いることができ、例えばフアラデー回転
素子用の透明体であるYIG等の強磁性体結晶を用
いることもできる。 この場合、結晶の大きさを小さくすることがで
きるので、結晶に印加する磁界の量(磁束量)も
少なくて済み、従つて外部磁界印加用のマグネツ
トを小型化することができる。 以上、本発明によれば、本願よりも先に出願し
た光導波装置の実施例である第5図の構成に比較
して、波長帯域を広くすることができ、また入射
角の範囲も広げることができるので、その実用上
の効果は頗る大である。
[Table] FIG. 5 shows an optical waveguide device incorporating the principle explained in connection with FIG. 4 above. Reference numerals 1, 7, and 8 in the figure correspond to those in FIG. 4, respectively, 9 represents an input light beam, and 10 represents an output light beam. This optical waveguide device has a transparent body (transparent plate body) having a thickness d and a length l as shown in FIG.
A first thin film 7 having a thickness t is deposited on both the upper and lower surfaces in the thickness direction, and a second thin film 7 having a desired thickness is further applied thereon.
A thin film 8 of is deposited. When an input light beam 9 is incident on the optical waveguide device shown in FIG. 5, it is reflected repeatedly on both the upper and lower surfaces of the optical waveguide device as shown in FIG. 5, and is output as an output light beam 10. The Rukoto. Regarding this reflection, as explained with reference to FIG. 4, a condition is given such that the phase shift between the P-polarized light component and the S-polarized light component does not change when the incident angle φ is close to π/2. . In FIGS. 6A and 6B, by enlarging the inside of the optical waveguide device shown in FIG. 5, the applied power supply voltage can be set to a sufficiently low value, for example, about 20V. However, the phase matching film shown in FIG. 5 has the disadvantage that the phase shift changes greatly with changes in wavelength, and the phase shift changes significantly even when the reflection angle deviates from 90 degrees. Therefore, an object of the present invention is to provide a phase matching film in which such a change in phase shift is small. In the present invention, this purpose is to form a P-polarized light component of the light beam on the boundary surface of the transparent body perpendicular to the thickness direction to repeatedly reflect the light beam introduced in the direction substantially perpendicular to the thickness direction of the transparent body. The phase matching film that compensates for the phase shift between the and the S-polarized light component is composed of three layers of optical thin films, and the refractive index of the first and third layers counting from the transparent body side is smaller than the refractive index of the transparent body, This is achieved by a phase matching film characterized in that the refractive index of the second layer is greater than the refractive index of the transparent body. FIG. 7 is a diagram showing an embodiment of the present invention, FIG. 8 is a diagram showing the wavelength characteristics of the phase matching film in FIG. 7 and the same characteristics of the phase matching film in FIG. 5, and FIG. 9 is a diagram showing the same characteristics as in FIG. 7. FIG. 6 is a diagram showing the incident angle characteristics of the phase matching film of FIG. 5 and the same characteristics of the phase matching film of FIG. In the present invention, as shown in FIG. 7, the light beam directed from the transparent body 2 toward the first layer thin film 16 satisfies the condition of total reflection. That is, the refractive index n 1 of the first layer thin film 16 is smaller than the refractive index n 0 of the transparent body 2. For example, as a transparent material, electro-optic crystal
When using Bi 12 SiO 20 , n 0 = 2.405, so
For example, silicon dioxide having a refractive index of 1.45 can be used as the first layer thin film 16. Incidentally, even if the relationship between the incident angle and the refractive index satisfies the total reflection condition as described above, the first layer thin film 16 does not have a large enough thickness to completely attenuate the surface waves. There is therefore a light beam passing through the first layer thin film 16, as is known as tunneling effect. In this way, the light beam that has reached the second layer thin film 17 then passes through the second layer thin film 17 and the third layer thin film 18.
The relationship between the magnitude of the refractive index (n 3 < n 0 <
n 2 ) and is totally reflected. At this time, the thickness of the third layer thin film 18 is made sufficiently large. Specifically, the second layer may be a silicon layer obtained by decomposing silane gas and have a refractive index of 3.55, and the third layer may be a thin film of silicon dioxide with a refractive index of 1.45 and a thickness of 10,000 Å or more. Considering the behavior of the light beam at each boundary surface as a whole, it can be seen that a part of the light beam from the transparent body 2 passes through the first layer thin film 1 due to the tunnel effect.
6 and undergoes multiple reflections in a meandering manner within the second layer thin film 17, and these multiple reflected light beams return to the transparent body 2 again from the second layer 17 due to the tunnel effect. Through this series of processes, the light beam and the light beam simply reflected at the boundary between the transparent body 2 and the first layer thin film 16 are combined. Therefore, it is assumed that the phase shift between the P-polarized light component and the S-polarized light component in each of the two light beams is set to an appropriate value, that is, when a simple harmonic combination is performed, they cancel each other out and become zero. In this case, for example, by changing the film thickness of the first layer and the second layer, the phase shift between the P polarized light component and the S polarized light component in the light beam re-entered into the transparent body 2 through the first layer can be changed. It is sufficient to set the amplitude to an appropriate value that can change the amplitude and thereby cancel out the phase shift between the polarization components in the combined beam of both the beams. As an example, an electro-optic crystal Bi 12 SiO 20 , n 0 = 2.405 is used using a light beam with a center wavelength of 1.3 μm, the first layer is SiO 2 , n 1 = 1.45, and the thickness is 950 Å; the second layer is
Si (including H), n 2 = 3.55, thickness 1820 Å; 3rd layer
When SiO 2 , n 3 =1.45 and the thickness is 10000 Å (any thickness greater than 3000 Å), the characteristics shown in FIGS. 8 and 9 are obtained. That is, FIG. 8 shows the change in phase shift with respect to wavelength, and the solid line corresponds to the configuration shown in FIG. 7, and the broken line corresponds to the configuration shown in FIG. 5. As is clear from the figure, the one based on the present invention (solid line) can suppress the phase shift to a lower level over a wider wavelength band than the one before the improvement shown in FIG. 5 (broken line). Moreover, FIG. 9 shows the change in phase shift with respect to the incident angle (the angle when the light beam is made to enter from the transparent body 2 side with respect to the interface between the transparent body 2 and the first layer thin film 16). The solid line corresponds to the configuration shown in FIG. 7, and the broken line corresponds to the configuration shown in FIG. 5. From this figure, the one based on the present invention (solid line) is
Compared to the model before improvement (broken line), the phase shift can be suppressed to a low level over a wide range of incident angles. Note that the present invention is not limited to the transparent material and thin film material shown in the above embodiments, and any material can be used. For example, ferromagnetic materials such as YIG, which is a transparent material for Faraday rotation elements, Body crystals can also be used. In this case, since the size of the crystal can be reduced, the amount of magnetic field (amount of magnetic flux) applied to the crystal can also be reduced, and therefore the magnet for applying the external magnetic field can be downsized. As described above, according to the present invention, it is possible to widen the wavelength band and widen the range of incident angles, compared to the configuration shown in FIG. 5, which is an embodiment of the optical waveguide device filed earlier than the present application. The practical effect is extremely large.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は光変調器の一例、第2図は反射時に生
じるP偏光成分とS偏光成分との位相ずれを説明
する説明図、第3図は屈折率を異にする境界にお
ける全反射によつてP偏光成分とS偏光成分との
夫々に生じる位相ずれを説明する説明図、第4図
は位相ずれを防止した反射部構成を説明する説明
図、第5図は光導波装置、第6図A,Bは夫々第
5図図示の光導波装置内を伝播する光のルートを
説明する説明図、第7図は本発明に基づいて改良
された位相整合膜の構成を示す図、第8図は第5
図と第7図に示すものの波長−位相ずれ特性を示
す図、第9図は第5図と第7図に示すものの入射
角−位相ずれ特性を示す図である。 図中、1は透明体、7は薄膜、8は物質、16
は第1層の薄膜、17は第2層の薄膜、18は第
3層の薄膜を表わす。
Figure 1 is an example of an optical modulator, Figure 2 is an explanatory diagram illustrating the phase shift between the P-polarized light component and the S-polarized light component that occurs during reflection, and Figure 3 is a diagram illustrating the phase shift between the P-polarized light component and the S-polarized light component that occurs during reflection. 4 is an explanatory diagram illustrating the configuration of a reflecting section that prevents the phase shift. FIG. 5 is an optical waveguide device. A and B are explanatory diagrams respectively explaining the route of light propagating in the optical waveguide device shown in FIG. 5, FIG. 7 is a diagram showing the structure of a phase matching film improved based on the present invention, and FIG. is the fifth
FIG. 9 is a diagram showing the wavelength-phase shift characteristics of the components shown in FIGS. 5 and 7, and FIG. 9 is a diagram showing the incident angle-phase shift characteristics of the components shown in FIGS. 5 and 7. In the figure, 1 is a transparent body, 7 is a thin film, 8 is a substance, and 16
17 represents a first layer thin film, 17 represents a second layer thin film, and 18 represents a third layer thin film.

Claims (1)

【特許請求の範囲】[Claims] 1 透明体の厚み方向と略直交する方向に導入さ
れた光ビームを繰返し反射する厚み方向と垂直な
上記透明体の境界面に形成され、上記光ビームの
P偏光成分とS偏光成分との位相ずれを補償する
位相整合膜において、3層の光学薄膜より構成さ
れ、上記透明体側から数えて第1、第3の層の屈
折率が透明体の屈折率より小さく、第2の層の屈
折率が透明体の屈折率より大きいことを特徴とす
る位相整合膜。
1 Formed on the boundary surface of the transparent body perpendicular to the thickness direction that repeatedly reflects a light beam introduced in a direction substantially orthogonal to the thickness direction of the transparent body, and changes the phase of the P-polarized light component and the S-polarized light component of the light beam. The phase matching film for compensating for misalignment is composed of three layers of optical thin films, and the refractive index of the first and third layers counting from the transparent body side is smaller than the refractive index of the transparent body, and the refractive index of the second layer is lower than the refractive index of the transparent body. A phase matching film characterized in that the refractive index is larger than that of a transparent body.
JP8865780A 1980-06-30 1980-06-30 Phase matching film Granted JPS5714810A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8865780A JPS5714810A (en) 1980-06-30 1980-06-30 Phase matching film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8865780A JPS5714810A (en) 1980-06-30 1980-06-30 Phase matching film

Publications (2)

Publication Number Publication Date
JPS5714810A JPS5714810A (en) 1982-01-26
JPS6116044B2 true JPS6116044B2 (en) 1986-04-28

Family

ID=13948884

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8865780A Granted JPS5714810A (en) 1980-06-30 1980-06-30 Phase matching film

Country Status (1)

Country Link
JP (1) JPS5714810A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60162207A (en) * 1984-02-01 1985-08-24 Hitachi Ltd Optical waveguide and its manufacturing method
US4715672A (en) * 1986-01-06 1987-12-29 American Telephone And Telegraph Company Optical waveguide utilizing an antiresonant layered structure

Also Published As

Publication number Publication date
JPS5714810A (en) 1982-01-26

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