JPS6116349B2 - - Google Patents
Info
- Publication number
- JPS6116349B2 JPS6116349B2 JP7357982A JP7357982A JPS6116349B2 JP S6116349 B2 JPS6116349 B2 JP S6116349B2 JP 7357982 A JP7357982 A JP 7357982A JP 7357982 A JP7357982 A JP 7357982A JP S6116349 B2 JPS6116349 B2 JP S6116349B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- plasma
- reduced pressure
- gas
- common electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 32
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 14
- 239000002994 raw material Substances 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 10
- 230000035699 permeability Effects 0.000 claims description 3
- 239000010408 film Substances 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000009423 ventilation Methods 0.000 description 4
- 230000006837 decompression Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
本発明は、例えば、基板の表面にアモルフアス
（非晶質）シリコン（以下「「ａ−Si膜」と称す）
等を生成させて太陽電池等を製造する場合に適用
されるプラズマCVD方法およびその装置に関す
るものである。Detailed Description of the Invention The present invention provides, for example, amorphous silicon (hereinafter referred to as "a-Si film") on the surface of a substrate.
The present invention relates to a plasma CVD method and an apparatus for the plasma CVD method applied to produce solar cells and the like.
従来、この種のプラズマCVD方法として、減
圧空間内に１種または数種類の原料ガスを連続的
に導入し、この原料ガスを前記減圧空間内に形成
したプラズマ放電場を通過させてプラズマ分解
し、その分解したガスを加熱した基板の成膜面に
導いて該成膜面に非晶質薄膜を生成させるように
したものがある。ところが、従来は、原料ガスを
単一のプラズマ放電場を通過させた後、直ちに基
板の成膜面へ導くようにしているので、比較的大
形の基板に良質の非晶質薄膜を短時間に生成させ
るのが難しいという問題がある。すなわち、前述
した従来の方法を実施するための装置としては、
第１図あるいは第２図に示すものが知られてい
る。第１図に示すものは、内部に減圧空間ａを形
成する減圧容器ｂの下半部b1の外側に対をなす電
極ｃ、ｄを対向配置して該下半部b1内にプラズマ
放電場ｅを形成するとともに、前記減圧容器ｂの
上半部b2内に、成膜面を前記プラズマ放電場ｅに
対向させた基板ｆと、この基板ｆの背面に添接さ
せた受熱板ｇと、この受熱板ｇを介して前記基板
ｆを加熱する加熱板ｈとを配設したものである。
そして、前記減圧容器ｂの下端から該減圧容器ｂ
内に導入した原料ガスｉを前記プラズマ放電場ｅ
を通して前記基板ｈの成膜面へ導くことができる
ようになつている。ところが、このような構成の
ものは、減圧容器ｂを大形化すると、それに伴つ
て電極ｃ、ｄ間の距離が大きくなるため、均一な
放電を行なわせることが難しくなる。そのため、
基板の大形化に対応できないという問題がある。
一方、第２図に示す装置は、減圧容器b′内に対を
なす電極c′、d′を略平行に対向配置してこれら両
電極c′、d′間にプラズマ放電場e′を形成し、一方
の電極c′側に加熱板h′により加熱される基板f′を
配置するとともに他方の電極d′を通気性を有した
形態のものにしている。そして、前記減圧容器
b′内に導入した原料ガスi′を前記電極d′を透過さ
せてプラズマ放電場e′内に導き、このプラズマ放
電場e′を通過させることによりプラズマ分解させ
たガスを前記基板f′の成膜面に供給するようにな
つている。しかし、このような構成のものであれ
ば、前記両電極を大きくすることによつてプラズ
マ放電場e′の広大化を図ることができるので、基
板の大形化に対処することができるが、各部均一
な放電状態を確保するためには前記両電極c′、
d′間の距離をあまり大きくできない。そのため、
プラズマ放電場e′の厚みの増大化には一定の限界
がある。したがつて、原料ガスの前記プラズマ放
電場e′に対する通過距離を十分に確保することが
難しく、プラズマ分解の不十分なガスが基板に供
給されがちとなる。その結果、生成膜に含まれる
不純物の量が多くなるとともに、膜の生成に長時
間を要することになるという問題がある。このよ
うに、従来のものは、いずれの形式の場合にも、
一定の不都合があり、比較的大形の基板に良質の
非晶質薄膜を短時間に生成させ得るようにしたい
という要求を同時に満足させることができない。
したがつて、従来の方法および装置では、非晶質
シリコン太陽電池等の製品を能率よく大量に生産
することが難しいという問題がある。 Conventionally, this type of plasma CVD method involves continuously introducing one or several types of raw material gas into a reduced pressure space, causing the raw material gas to pass through a plasma discharge field formed in the reduced pressure space, and causing plasma decomposition. There is a method in which the decomposed gas is guided to the film-forming surface of a heated substrate to form an amorphous thin film on the film-forming surface. However, in the past, the raw material gas was passed through a single plasma discharge field and then immediately guided to the film formation surface of the substrate, so it was possible to deposit a high-quality amorphous thin film on a relatively large substrate in a short time. The problem is that it is difficult to generate. That is, as an apparatus for carrying out the conventional method described above,
The one shown in FIG. 1 or 2 is known. In the case shown in FIG. 1, a pair of electrodes c and d are arranged facing each other on the outside of a lower half b 1 of a reduced pressure vessel b that forms a reduced pressure space a inside, and a plasma discharge is generated within the lower half b 1 . A substrate f whose film-forming surface faces the plasma discharge field e is placed in the upper half b2 of the reduced pressure vessel b, and a heat receiving plate g attached to the back surface of the substrate f. and a heating plate h that heats the substrate f via the heat receiving plate g.
Then, from the lower end of the reduced pressure container b to the reduced pressure container b.
The source gas i introduced into the plasma discharge field e
It can be guided to the film-forming surface of the substrate h through the film. However, in the case of such a structure, when the reduced pressure container b is increased in size, the distance between the electrodes c and d increases accordingly, making it difficult to perform uniform discharge. Therefore,
There is a problem that it cannot cope with the increase in the size of the substrate.
On the other hand, in the device shown in Fig. 2, a pair of electrodes c' and d' are disposed substantially parallel to each other in a reduced pressure vessel b', and a plasma discharge field e' is formed between these two electrodes c' and d'. However, a substrate f' heated by a heating plate h' is disposed on the side of one electrode c', and the other electrode d' is made to have air permeability. and the reduced pressure container
The raw material gas i' introduced into the substrate f' is passed through the electrode d' and guided into the plasma discharge field e', and the plasma decomposed gas is passed through the plasma discharge field e'. It is designed to be supplied to the film forming surface. However, with such a configuration, by increasing the size of both electrodes, the plasma discharge field e' can be expanded, so it is possible to cope with an increase in the size of the substrate. In order to ensure a uniform discharge state in each part, both the electrodes c′,
The distance between d′ cannot be made too large. Therefore,
There is a certain limit to increasing the thickness of the plasma discharge field e'. Therefore, it is difficult to ensure a sufficient passage distance for the source gas to the plasma discharge field e', and gas that is insufficiently plasma decomposed tends to be supplied to the substrate. As a result, there are problems in that the amount of impurities contained in the produced film increases and that it takes a long time to produce the film. In this way, in any format, the conventional one
There are certain disadvantages and it is not possible to simultaneously satisfy the need to be able to form a high-quality amorphous thin film on a relatively large substrate in a short time.
Therefore, with conventional methods and devices, there is a problem in that it is difficult to efficiently mass-produce products such as amorphous silicon solar cells.
本発明は、このような事情に着目してなされた
もので、減圧空間内にグロー放電による複数のプ
ラズマ放電場を設け、原料ガスをこれらのプラズ
マ枚電場を順次に通過させて基板に導くようにす
ることによつて、比較的大形の基板または比較的
広範囲に配置された複数の基板等に良質の非晶質
薄膜を短時間に生成させることができるようにし
たプラズマCVD方法、および、その方法を簡単
な構成により効率よく実施することができるよう
にしたプラズマCVD装置を提供するものであ
る。 The present invention has been made in view of these circumstances, and includes providing a plurality of plasma discharge fields by glow discharge in a depressurized space, and passing source gas sequentially through these plasma plate electric fields to guide it to the substrate. A plasma CVD method that can generate a high-quality amorphous thin film on a relatively large substrate or multiple substrates arranged over a relatively wide area in a short time by The object of the present invention is to provide a plasma CVD apparatus that can efficiently carry out the method with a simple configuration.
以下、本発明の一実施例を第３図を参照して説
明する。 Hereinafter, one embodiment of the present invention will be described with reference to FIG.
第３図は、本発明に係るプラズマCVD装置の
概略断面図である。この装置は、内部に減圧空間
１を形成する減圧容器２を設け、この減圧容器２
内の中段位置に網またはくし状の通気性を有した
共通電極３を略水平に配置している。また、前記
減圧容器２内の前記共通電極３の上面に対向する
部位に第１の電極４を設けるとともに、前記共通
電極３の下面に対向する部位に第２の電極５を配
設している。そして、前記共通電極３を高周波電
源６に接続するとともに、前記第１、第２の電極
４，５をそれぞれ所定の直流電源７，８に接続
し、前記第１の電極４と前記共通電極３との間に
第１のプラズマ放電場１１を形成するとともに、
前記第２の電極５と前記共通電極３との間に第２
のプラズマ放電場１２を形成している。前記第１
の電極４は、受熱板を兼ねる良伝熱材製のもの
で、該電極４の下面に基板１３が添接させてあ
る。そして、この基板１３と前記電極４とはホル
ダー１４によつて前記共通電極３と略平行に保持
されている。また、前記電極４の上方近傍には、
該電極４を介して前記基板１３を加熱するための
加熱板１５が配設されている。一方、第２の電極
５は、多数の小孔５ａを穿設してなる多孔板状の
もので、原料ガスＧが該電極５を透過し得るよう
になつている。そして、前記減圧容器２の下端部
にガス供給系路１６を接続するとともに、上端部
に真空ポンプ１７を含む排気系路１８を接続して
いる。 FIG. 3 is a schematic cross-sectional view of a plasma CVD apparatus according to the present invention. This device is provided with a reduced pressure container 2 that forms a reduced pressure space 1 inside, and this reduced pressure container 2
A common electrode 3 having a mesh or comb-like air permeability is arranged approximately horizontally in the middle position within. Further, a first electrode 4 is provided at a portion facing the upper surface of the common electrode 3 in the decompression container 2, and a second electrode 5 is provided at a portion facing the lower surface of the common electrode 3. . Then, the common electrode 3 is connected to a high frequency power source 6, and the first and second electrodes 4 and 5 are connected to predetermined DC power sources 7 and 8, respectively, so that the first electrode 4 and the common electrode 3 A first plasma discharge field 11 is formed between the
A second electrode is provided between the second electrode 5 and the common electrode 3.
A plasma discharge field 12 is formed. Said first
The electrode 4 is made of a good heat conductive material and also serves as a heat receiving plate, and a substrate 13 is attached to the lower surface of the electrode 4. The substrate 13 and the electrode 4 are held substantially parallel to the common electrode 3 by a holder 14. Further, near the upper part of the electrode 4,
A heating plate 15 for heating the substrate 13 via the electrode 4 is provided. On the other hand, the second electrode 5 is in the form of a perforated plate having a large number of small holes 5a, so that the raw material gas G can pass through the electrode 5. A gas supply line 16 is connected to the lower end of the decompression vessel 2, and an exhaust line 18 including a vacuum pump 17 is connected to the upper end.
次いで、本発明に係るプラズマCVD方法を前
述した装置の作動とともに説明する。 Next, the plasma CVD method according to the present invention will be explained together with the operation of the above-mentioned apparatus.
まず、真空ポンプ１７を作動させて減圧容器２
内を10-2Torr程度以下の圧力にした後減圧容器
２への原料ガスの流入流出バルブの調節により
1Torr内外の圧力および必要なガス流速を維持す
るとともに、加熱板１５内のヒータに通電して第
１の電極４の下面にセツトした基板１３を加熱し
ておく。また、各電極３，４，５に所定の電圧を
印加して、第１の電極４と共通電極３との間、お
よび、第２の電極５と共通電極３との間にそれぞ
れグロー放電を起させ、前記共通電極３を介して
上、下に隣接する第１のプラズマ放電場１１と第
２のプラズマ放電場１２とを形成する。この状態
で、ガス供給系路１６から前記減圧容器２内へモ
ノシラン（SiH4）等を含む原料ガスＧを遂次供給
すると、この原料ガスＧが、第２の電極５の小孔
５ａ……を通して第２のプラズマ放電場１２に流
入し、しかる後、共通電極３を透過して第１のプ
ラズマ放電場１１に導入される。しかして、この
原料ガスＧは、前記各プラズマ放電場１２，１１
を順次に通過する際にプラズマ分解されることと
なり、その分解されたガスが加熱した基板１３の
成膜面１３ａに逐次供給されて該成膜面１３ａに
ａ−Si膜等の非晶質薄膜が生成される。そして、
不用となつたガスは排気系路１８を通して前記減
圧容器２外へ排出される。 First, the vacuum pump 17 is operated and the reduced pressure container 2 is
After reducing the pressure inside to about 10 -2 Torr or less, the raw material gas flows into the decompression vessel 2 by adjusting the inflow and outflow valves.
While maintaining the internal and external pressure of 1 Torr and the necessary gas flow rate, the heater in the heating plate 15 is energized to heat the substrate 13 set on the lower surface of the first electrode 4. Further, by applying a predetermined voltage to each electrode 3, 4, and 5, a glow discharge is generated between the first electrode 4 and the common electrode 3 and between the second electrode 5 and the common electrode 3, respectively. A first plasma discharge field 11 and a second plasma discharge field 12 which are adjacent to each other above and below via the common electrode 3 are formed. In this state, when a raw material gas G containing monosilane (SiH 4 ), etc. is sequentially supplied from the gas supply line 16 into the reduced pressure container 2, this raw material gas G flows through the small holes 5a of the second electrode 5... It flows into the second plasma discharge field 12 through the plasma discharge field 12 and then passes through the common electrode 3 and is introduced into the first plasma discharge field 11. Therefore, this raw material gas G is
The decomposed gas is sequentially supplied to the film-forming surface 13a of the heated substrate 13, and an amorphous thin film such as an a-Si film is formed on the film-forming surface 13a. is generated. and,
The gas that is no longer needed is discharged to the outside of the vacuum container 2 through the exhaust system 18.
このようにして、基板１３の成膜面１３ａに所
望の非晶質薄膜を生成させることができるわけで
あるが、本発明に係るプラズマCVD方法は、電
極の対向面間にグロー放電を起させてプラズマ放
電場１１，１２を形成させるようにしたものであ
るため、放電が不均一になるという不都合を招く
ことなしに、プラズマ放電場１１，１２の広大化
を図ることができる。すなわち、基板１３の拡大
に伴つて各電極の面積を大きくすれば、何らの不
都合もなしに基板１３の大形化に対処することが
できる。しかも、プラズマ放電場を多段に設け、
原料ガスＧをこれら各プラズマ放電場１１，１２
に順次に導くようにしているので、該ガスＧを十
分にプラズマ分解することが可能であり、不純物
の少ない良質の非晶質薄膜を短時間に生成させる
ことが可能となる。 In this way, a desired amorphous thin film can be formed on the film-forming surface 13a of the substrate 13, but the plasma CVD method according to the present invention generates a glow discharge between the opposing surfaces of the electrodes. Since the plasma discharge fields 11 and 12 are formed by the plasma discharge fields 11 and 12, it is possible to enlarge the plasma discharge fields 11 and 12 without causing the inconvenience of non-uniform discharge. That is, by increasing the area of each electrode as the substrate 13 is enlarged, it is possible to cope with the increase in the size of the substrate 13 without any inconvenience. Moreover, the plasma discharge field is provided in multiple stages,
The raw material gas G is transferred to each of these plasma discharge fields 11 and 12.
Since the gas G is introduced in sequence, it is possible to sufficiently plasma decompose the gas G, and it is possible to generate a high-quality amorphous thin film containing few impurities in a short time.
また、前述したプラズマCVD装置は、前記第
２の電極５の前記共通電極３に対向する面をガス
放出面５ａとし、このガス放出面５から第２のプ
ラズマ放電場１２に向けて放出させた原料ガスＧ
を該第２のプラズマ放電場１２および第１のプラ
ズマ放電場１１を通して前記第１の電極４側に設
けた基板１３の成膜面１３ａに供給し得るように
しているので、前記成膜面１３ａの各部分に、前
記両プラズマ放電場１１，１２を略同一の条件で
通過したガスをそれぞれ供給することができる。
また、このような構成のものであれば、放電範囲
が有効範囲に限定できるので、節電を図ることが
できるとともに、非晶質薄膜の無効付着範囲を減
少させることが可能であり、生産量に比し装置の
小形化を図ることができる。また、本装置の場
合、電極間距離（すなわち、共通電極３と第１の
電極４との間、共通電極３と第２の電極５との間
のいずれか、または両方）を電源導入部の設置電
位部への絶縁距離（片方接地電源の場合）また
は、その２倍（両出力浮上電源の場合）にそれぞ
れ近い寸法よりも小さく設定すれば電源導入部に
おける無効（または、有害）放電を防止すること
もできる。 Further, in the plasma CVD apparatus described above, the surface of the second electrode 5 facing the common electrode 3 is used as a gas emitting surface 5a, and the gas is emitted from this gas emitting surface 5 toward the second plasma discharge field 12. Raw material gas G
can be supplied to the film forming surface 13a of the substrate 13 provided on the first electrode 4 side through the second plasma discharge field 12 and the first plasma discharge field 11. The gas that has passed through both the plasma discharge fields 11 and 12 under substantially the same conditions can be supplied to each part of the plasma discharge field 11 and 12 under substantially the same conditions.
In addition, with this configuration, the discharge range can be limited to the effective range, so it is possible to save power and reduce the ineffective adhesion range of the amorphous thin film, which reduces production volume. The comparison device can be made smaller. In addition, in the case of this device, the distance between the electrodes (that is, between the common electrode 3 and the first electrode 4, between the common electrode 3 and the second electrode 5, or both) is Ineffective (or harmful) discharge at the power supply introduction part can be prevented by setting the distance smaller than the insulation distance to the installed potential part (in the case of a single-side grounded power supply) or twice that distance (in the case of a dual-output floating power supply). You can also.
なお、本発明に係るプラズマCVDの方法は、
前記実施例に限定されないのは勿論であり、例え
ば、プラズマ放電場を３段以上設けてもよい。ま
た、各プラズマ放電場は、連続構成器である板状
の電極により成形されたものに限らず、複数に分
割された単位電極の集合体により形成されたもの
であつてもよい。また、装置について、第２の電
極の構成は前記実施例のものに限らず、例えば、
第４図〜第８図に示すようなものであつてもよ
い。すなわち、第４図に示す第２の電極２５は、
金属繊維を板状に集合させてなるもので、その上
面をガス放出面２５ａとしている。また、第５図
に示す第２の電極３５は、焼結金属や連続気泡状
通気性物体を板状に成形してなるもので、無数の
細孔が開口する上面をガス放出面３５ａとしてい
る。さらに、第６図に示す第２の電極４５は、多
数の通気孔４６……を穿設した金属板製のもの
で、前記各通気孔４６……が開口する面をガス放
出面４５ａとしている。また、第７図に示す第２
の電極５５は、内部に空洞５６を有し天壁に多数
の通気孔５７……を設けてなるもので、これらの
通気孔５７……が開口する面をガス放出面５５ａ
としている。つまり、この電極５５は、側方から
空洞５６内に導入した原料ガスＧを前記通気孔５
７……を通して上方へ放出し得るようになつてい
る。 Note that the plasma CVD method according to the present invention includes:
Of course, the present invention is not limited to the above embodiments, and for example, three or more stages of plasma discharge fields may be provided. Furthermore, each plasma discharge field is not limited to one formed by a continuous plate-shaped electrode, but may be formed by an aggregate of unit electrodes divided into a plurality of parts. Further, regarding the device, the configuration of the second electrode is not limited to that of the above embodiment, and for example,
It may be as shown in FIGS. 4 to 8. That is, the second electrode 25 shown in FIG.
It is made by gathering metal fibers into a plate shape, and its upper surface serves as a gas release surface 25a. Further, the second electrode 35 shown in FIG. 5 is formed by molding a sintered metal or an open-cell gas permeable material into a plate shape, and the upper surface where countless pores are opened serves as a gas release surface 35a. . Further, the second electrode 45 shown in FIG. 6 is made of a metal plate having a large number of ventilation holes 46, and the surface where each of the ventilation holes 46 opens is a gas release surface 45a. . In addition, the second
The electrode 55 has a cavity 56 inside and a large number of ventilation holes 57 on the top wall, and the surface where these ventilation holes 57 are open is called the gas release surface 55a.
It is said that In other words, this electrode 55 allows the source gas G introduced into the cavity 56 from the side to pass through the vent hole 5.
7. It is designed so that it can be released upward through...
また、各電極の配列方向は、上、下方向に限ら
ず、例えば、水平方向であつてもよい。また、第
８図ａ，ｂ，ｃは、共通電極および第１、第２の
電極に接続する電源に関する変形例を示したもの
で、図中２１は高周波電源と直流電源とを複合し
た電源である。 Further, the arrangement direction of each electrode is not limited to the upper or lower direction, but may be, for example, the horizontal direction. In addition, Fig. 8a, b, and c show modified examples of the power supply connected to the common electrode and the first and second electrodes, and 21 in the figure is a power supply that combines a high frequency power supply and a DC power supply. be.
本発明は、以上のような構成であるから、比較
的大形の基板または比較的広範囲に配置された複
数の基板等に良質の非晶質薄膜を短時間に生成さ
せることができるプラズマCVD方法、および、
その方法を簡単な構成により効率よく実施するこ
とができる。プラズマCVD装置を提供できるも
のである。 Since the present invention has the above-described configuration, the present invention provides a plasma CVD method that can generate a high-quality amorphous thin film on a relatively large substrate or a plurality of substrates arranged over a relatively wide area in a short time. ,and,
The method can be implemented efficiently with a simple configuration. It is possible to provide a plasma CVD device.
第１図、第２図は従来例を示す概略断面図であ
る。第３図は本発明の一実施例を示す概略断面図
である。第４図〜第７図は本発明のそれぞれ他の
実施例を示す部分断面図、第８図ａ，ｂ，ｃは、
本発明のそれぞれ他の実施例を示す回路図であ
る。
２……減圧容器、３……共通電極、４……第１
の電極、５，２５，３５，４５，５５……第２の
電極、５ａ，２５ａ，３５ａ，４５ａ，５５ａ…
…ガス放出面、１１……第１のプラズマ放電場、
１２……第２のプラズマ放電場、１３……基板、
１３ａ……成膜面。
1 and 2 are schematic sectional views showing a conventional example. FIG. 3 is a schematic cross-sectional view showing one embodiment of the present invention. FIGS. 4 to 7 are partial sectional views showing other embodiments of the present invention, and FIGS. 8a, b, and c are
FIG. 7 is a circuit diagram showing other embodiments of the present invention. 2...Reduced pressure vessel, 3...Common electrode, 4...First
electrodes, 5, 25, 35, 45, 55...second electrodes, 5a, 25a, 35a, 45a, 55a...
...Gas release surface, 11...First plasma discharge field,
12... Second plasma discharge field, 13... Substrate,
13a... Film forming surface.
Claims (1)
スを前記減圧空間内にグロー放電により形成した
複数のプラズマ放電場を順次に通過させてプラズ
マ分解し、その分解したガスを加熱した基板の成
膜面に導いて該成膜面に非晶質薄膜を生成させる
ようにしたことを特徴とするプラズマCVDの方
法。 ２ 減圧容器と、この減圧容器内に配設した通気
性を有する共通電極と、前記減圧容器内における
前記共通電極の一面に対向する部位に配設され前
記共通電極との間に第１のプラズマ放電場を形成
する第１の電極と、前記減圧容器内における前記
共通電極の他面に対向する部位に配設され前記共
通電極との間に第２のプラズマ放電場を形成する
第２の電極と、成膜面を前記第１のプラズマ放電
場に対向させて前記第１の電極側に配置した基板
とを具備してなる装置であつて、前記第２の電極
の前記共通電極に対向する面をガス放出面とし、
このガス放出面から前記第２のプラズマ放電場に
向けて原料ガスを供給し各プラズマ放電場を順次
通過させるように構成したことを特徴とするプラ
ズマCVD装置。[Scope of Claims] 1. A source gas is introduced into a reduced pressure space, and the source gas is plasma decomposed by sequentially passing through a plurality of plasma discharge fields formed by glow discharge in the reduced pressure space, and the decomposed gas is 1. A plasma CVD method characterized in that an amorphous thin film is produced on the film-forming surface by guiding the plasma to the film-forming surface of a heated substrate. 2. A first plasma is formed between a reduced pressure container, a common electrode with air permeability disposed in the reduced pressure container, and the common electrode provided in a portion facing one surface of the common electrode in the reduced pressure container. a first electrode that forms a discharge field; and a second electrode that forms a second plasma discharge field between the first electrode and the common electrode, which is disposed in a portion of the reduced pressure container that faces the other surface of the common electrode. and a substrate disposed on the first electrode side with its film-forming surface facing the first plasma discharge field, the substrate facing the common electrode of the second electrode. with the surface as the gas release surface,
A plasma CVD apparatus characterized in that the raw material gas is supplied from the gas discharge surface toward the second plasma discharge field and is made to pass through each plasma discharge field in sequence.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7357982A JPS58193360A (en) | 1982-04-30 | 1982-04-30 | Plasma CVD method and apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7357982A JPS58193360A (en) | 1982-04-30 | 1982-04-30 | Plasma CVD method and apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58193360A JPS58193360A (en) | 1983-11-11 |
| JPS6116349B2 true JPS6116349B2 (en) | 1986-04-30 |
Family
ID=13522343
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7357982A Granted JPS58193360A (en) | 1982-04-30 | 1982-04-30 | Plasma CVD method and apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58193360A (en) |
-
1982
- 1982-04-30 JP JP7357982A patent/JPS58193360A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58193360A (en) | 1983-11-11 |
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