JPS6117141B2 - - Google Patents
Info
- Publication number
- JPS6117141B2 JPS6117141B2 JP3647280A JP3647280A JPS6117141B2 JP S6117141 B2 JPS6117141 B2 JP S6117141B2 JP 3647280 A JP3647280 A JP 3647280A JP 3647280 A JP3647280 A JP 3647280A JP S6117141 B2 JPS6117141 B2 JP S6117141B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- vacuum suction
- probe
- suction table
- polishing jig
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000523 sample Substances 0.000 claims description 82
- 235000012431 wafers Nutrition 0.000 claims description 66
- 238000005498 polishing Methods 0.000 claims description 57
- 238000012360 testing method Methods 0.000 claims description 8
- 238000007689 inspection Methods 0.000 description 19
- 238000000034 method Methods 0.000 description 4
- 230000002950 deficient Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
- G01R1/07342—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being at an angle other than perpendicular to test object, e.g. probe card
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
【発明の詳細な説明】
本発明は、プローブカードの下に連続的に被検
査ウエーハを供給し、つぎつぎと自動的に該ウエ
ーハの電気特性検査が行なわれる装置において、
該プローブカードの探針を定期的に研摩するよう
にしたプローブカード探針研摩装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention provides an apparatus in which wafers to be tested are continuously supplied under a probe card, and the electrical characteristics of the wafers are automatically tested one after another.
The present invention relates to a probe card probe polishing device that periodically polishes the probes of the probe card.
トランジスタ、集積回路などの半導体装置の製
造工程においては、一枚の単結晶ウエーハ上にフ
オトエツチの技法を用いて多数の素子が形成され
る。ウエーハ上にこれらの素子が完成すると、ウ
エーハ検査と呼ばれる各素子の電気特性検査が行
なわれる。 In the manufacturing process of semiconductor devices such as transistors and integrated circuits, a large number of elements are formed on a single single crystal wafer using photo-etching techniques. When these elements are completed on a wafer, electrical characteristics of each element are inspected, which is called wafer inspection.
このウエーハ検査は、電気特性試験機(以下テ
スタという)とプローブカードを用いて行なわれ
る。すなわち、素子の所定電極にプローブカード
の探針を接触させ、この探針のそれぞれの他端か
ら引出された導線が接続されているテスタにより
素子の電気特性検査をする。この場合、ウエーハ
を固定し、間欠送り機構によりウエーハ上の全素
子にわたつてプローブカードの探針を接触させる
ために、プローブカードを決められた順序に従つ
て微少位置移動させる機能をもつたウエーハプロ
ーバが使用される。 This wafer inspection is performed using an electrical property testing machine (hereinafter referred to as a tester) and a probe card. That is, the probes of a probe card are brought into contact with predetermined electrodes of the element, and the electrical characteristics of the element are tested using a tester to which conductive wires drawn out from the other ends of the probes are connected. In this case, the wafer is fixed, and an intermittent feeding mechanism is used to move the probe card slightly in position in a predetermined order in order to bring the probes of the probe card into contact with all the elements on the wafer. A prober is used.
ところで、上記のようにして多数のウエーハの
検査をしているうちに、プローブカードの探針と
素子の電極との間の接触抵抗は次第に増大してく
る。 By the way, while testing a large number of wafers as described above, the contact resistance between the probe of the probe card and the electrode of the element gradually increases.
このように接触抵抗が増大する原因としては、
ウエーハ検査中に不良素子を検査し、探針に過大
電流が流れたことによる探針表面の酸化、および
素子の電極表面にある酸化物が探針表面に付着す
ることが挙げられる。このような原因により探針
の接触抵抗が増加すると検査結果にそれ相応の誤
差が入り、この誤差が特許範囲を越えると良品の
ウエーハに対しても不良の検査結果を出すことに
なり、検査の信頼性は全く失われる。したがつ
て、ウエーハ検査開始時およびウエーハ検査途中
の随時において、研摩治具を用いてプローブカー
ドの探針を研摩し、常時プローブカードの探針を
清浄な状態に保持する配慮がなされておつた。 The reason for this increase in contact resistance is
Examples of such problems include oxidation of the probe surface due to excessive current flowing through the probe when defective elements are inspected during wafer inspection, and oxides on the electrode surface of the element adhering to the probe surface. If the contact resistance of the probe increases due to such causes, a corresponding error will be introduced into the inspection results, and if this error exceeds the patented range, a defective inspection result will be given even for a good wafer, and the inspection will be delayed. All credibility is lost. Therefore, care has been taken to keep the probe card probes clean at all times by polishing the probe card probes using a polishing jig at the start of wafer inspection and at any time during wafer inspection. .
この研摩作業は、ウエーハプローバの真空吸着
台の上にピンセツトなどを用いてウエーハと類似
形状の研摩用治具を載せて吸着固定させる。次に
この真空吸着台をプローブカードの下に移動さ
せ、それから真空吸着台を上下に動かし、プロー
ブカードの探針と研摩治具が軽く接触して離れる
研摩作業を数回繰り返してプローブカードの探針
の表面を研摩する。研摩終了後はピンセツトなど
により、研摩治具を真空吸着台から取り除く、と
いう作業工程を含むものであり、真空吸着台の移
動などのプローバ操作は全て手動操作によつてい
た。 In this polishing operation, a polishing jig having a similar shape to the wafer is placed on the vacuum suction table of the wafer prober using tweezers or the like and fixed by suction. Next, move this vacuum suction table under the probe card, then move the vacuum suction table up and down, and repeat the polishing process several times where the probe card probe and polishing jig lightly touch and then separate. Polish the surface of the needle. After polishing is completed, the process involves removing the polishing jig from the vacuum suction table using tweezers or the like, and all prober operations such as moving the vacuum suction table were performed manually.
したがつて、上記の研摩作業は非常に手間のか
かるものであり、検査途中で随時割込むことにな
ると作業能率を著しく低下させるうえに、研摩頻
度が一定せず、時として接触抵抗の増大に気が付
かず、多くの検査ミスを出すという欠点があつ
た。特に最近では、素子の電極とプローブカード
の探針との接触位置合せを自動的に行う全自動プ
ローバが出現している。この全自動プローバによ
れば、同一品種なら多数のウエーハを人手をかけ
ずに検査することが可能であり、若しこの場合、
プローブカードの探針の許容値を越えた接触抵抗
の増大をそのままで検査したりすることになれ
ば、一時に多数の検査ミスを出すことになり、ま
た、検査の流れを止めて、プローブカード探針の
研摩作業を随時割込ませるということは甚だしい
作業流れの困乱を引起し、全自動化の効率を著し
く阻害するものであつた。 Therefore, the above-mentioned polishing work is very time-consuming, and if it is interrupted at any time during the inspection, the work efficiency will be significantly lowered, and the polishing frequency will be inconsistent, sometimes resulting in an increase in contact resistance. The drawback was that many inspection errors were made due to lack of awareness. Particularly recently, fully automatic probers have appeared that automatically align the contact positions between the electrodes of the element and the probes of the probe card. According to this fully automatic prober, it is possible to inspect a large number of wafers of the same type without any manual effort.
If the increase in contact resistance exceeds the allowable value of the tip of the probe card and is inspected as it is, many inspection errors will occur at once, and the flow of inspection will be stopped and the probe card Interrupting the polishing work of the probe at any time caused a serious disruption to the work flow and significantly hindered the efficiency of full automation.
本発明の目的は、上記の欠点を解決して、検査
の流れを乱すこともなく、常時プローブカードの
探針の接触抵抗が許容値範囲を越すことがないよ
うに規則的な研摩が行なわれるプローブカード探
針研摩装置を提供することにある。 The purpose of the present invention is to solve the above-mentioned drawbacks and to perform regular polishing without disturbing the flow of inspection and so that the contact resistance of the probe of the probe card does not exceed the permissible value range at all times. An object of the present invention is to provide a probe card probe polishing device.
本発明のプローブカード探針研摩装置は、真空
吸着台と、この真空吸着台に被検査ウエーハを供
給するウエーハ供給装置と、該真空吸着台をプロ
ーブカードの下に移送しウエーハプローバの作動
により該プローブカードの探針と該真空吸着台上
のウエーハに含まれる各素子の電極とが接触され
該ウエーハの電気特性検査後該真空吸着台を該プ
ローブカードの下から退避させる真空吸着台移動
装置とを含むウエーハ電気特性検査装置に付加さ
れるプローブカード探針研摩装置であつて、前記
ウエーハ供給装置に結合され所定の供給ウエーハ
枚数を計算する毎に出力信号を出す計数装置と、
前記ウエーハと類似形状の研摩治具と、前記計数
装置の出力を受け前記連続供給のウエーハの間に
前記研摩治具をはさませる研摩治具供給装置と、
該研摩治具を載置した真空吸着台が前記プローブ
カードの下に運ばれたとき前記ウエーハプローバ
の作動の代わりに該真空吸着台上の研摩治具を該
プローブカードの探針と軽く接触してまた離れる
上下運動を該真空吸着台に与える真空吸着台上下
動装置と、該プローブカードの下から離脱して研
摩治具収納位置に運ばれた該研摩治具を研摩治具
収納台に収納する研摩治具収納装置とを含んで構
成されている。 The probe card probe polishing apparatus of the present invention includes a vacuum suction table, a wafer supply device that supplies a wafer to be inspected to the vacuum suction table, and a wafer supply device that transfers the vacuum suction table below the probe card and performs inspection by operating a wafer prober. a vacuum suction table moving device that brings the probe of the probe card into contact with the electrodes of each element included in the wafer on the vacuum suction table and evacuates the vacuum suction table from under the probe card after testing the electrical characteristics of the wafer; a probe card probe polishing device added to a wafer electrical property testing device including a counting device coupled to the wafer feeding device and outputting an output signal every time a predetermined number of fed wafers is calculated;
a polishing jig having a similar shape to the wafer; and a polishing jig supply device that receives the output of the counting device and sandwiches the polishing jig between the continuously supplied wafers;
When the vacuum suction table on which the polishing jig is placed is carried under the probe card, instead of operating the wafer prober, the polishing jig on the vacuum suction table is brought into light contact with the probe of the probe card. a vacuum suction table vertical movement device that gives the vacuum suction table vertical motion to move the vacuum suction table up and down, and stores the polishing jig that has been detached from under the probe card and carried to a polishing jig storage position in the polishing jig storage table. and a polishing jig storage device.
つぎに本発明を実施例により説明する。 Next, the present invention will be explained by examples.
第1図は本発明の一実施列のブロツク図であ
る。 FIG. 1 is a block diagram of one implementation of the present invention.
第1図において、ウエーハ供給装置1は真空吸
着台2に被検査ウエーハ(図示せず)を供給す
る。被検査ウエーハが載置された真空吸着台は、
真空吸着台移動装置3によりプローブカード4の
下に移され、ウエーハプローバ(図示せず)によ
りプローブカード4の探針5と被検査ウエーハの
素子電極とが接触され、プローブカードから引出
されている接続導線がつながれた電機特性試験機
(図示せず)において被検査ウエーハの電気特性
が検査され、検査終了後のウエーハは矢印6の径
路に従つて退避され、7の位置でウエーハ収納台
8に収納される。 In FIG. 1, a wafer supply device 1 supplies a wafer to be inspected (not shown) to a vacuum suction table 2. As shown in FIG. The vacuum suction table on which the wafer to be inspected is placed is
The wafer is moved under the probe card 4 by the vacuum suction table moving device 3, the probes 5 of the probe card 4 are brought into contact with the element electrodes of the wafer to be inspected by a wafer prober (not shown), and the wafer is pulled out from the probe card. The electrical properties of the wafer to be inspected are tested in an electrical property testing machine (not shown) to which connecting conductors are connected, and after the test, the wafer is evacuated along the path indicated by arrow 6 and placed on wafer storage table 8 at position 7. It will be stored.
このようなウエーハ検査工程において、ウエー
ハ供給装置1に結合された計数装置9は、ウエー
ハ供給装置1によつて供給されるウエーハ枚数を
計数し、それが所定の枚数に達すると信号を出力
し、研摩制御装置10に加える。この信号を受取
つた研摩制御装置10は、ウエーハ供給装置1に
よる被検査ウエーハの供給を一時やめさせ、その
代わりに被検査ウエーハと類似形状の研摩治具1
1を研摩治具供給装置12からウエーハ供給装置
の移動台1bに載せ、この研摩治具は被検査ウエ
ーハと同様に真空吸着台2に移されプローブカー
ド4の下に運ばれる。このとき、ウエーハ検査の
場合は、ウエーハプローバ(図示せず)の作動に
よりウエーハの素子電極とプローブカードの探針
5の接触が行われるのがあるが、研摩治具11の
場合は、研摩治具制御装置10からの指令により
真空吸着台上下動装置13が動作し、研摩治具が
プローブカード探針5に軽く接触してまた離れる
という研摩動作を数回繰り返えされて研摩治具1
1によるプローブカードの探針5の研摩が行なわ
れる。その後被検査ウエーハと同様にして研摩治
具11はウエーハ退避台14の7の位置に運ば
れ、ここから研摩治具収納装置15により研摩治
具収納台16の上に移される。 In such a wafer inspection process, a counting device 9 coupled to the wafer supply device 1 counts the number of wafers supplied by the wafer supply device 1, and outputs a signal when the number reaches a predetermined number, Add to the polishing control device 10. Upon receiving this signal, the polishing control device 10 temporarily stops the wafer supply device 1 from supplying the wafer to be inspected, and instead uses a polishing jig 1 having a similar shape to the wafer to be inspected.
1 is placed from the polishing jig supply device 12 onto the movable table 1b of the wafer supply device, and this polishing jig is transferred to the vacuum suction table 2 in the same way as the wafer to be inspected and carried under the probe card 4. At this time, in the case of wafer inspection, the element electrode of the wafer and the probe 5 of the probe card are brought into contact by the operation of a wafer prober (not shown), but in the case of the polishing jig 11, the polishing jig The vacuum suction table vertical movement device 13 operates according to a command from the tool control device 10, and the polishing operation in which the polishing jig lightly contacts the probe card probe 5 and then separates again is repeated several times, and the polishing jig 1
The probe 5 of the probe card is polished by the polishing method 1. Thereafter, in the same manner as the wafer to be inspected, the polishing jig 11 is transported to position 7 on the wafer retraction table 14, and from there is transferred onto the polishing jig storage table 16 by the polishing jig storage device 15.
第2図は第1図に示すプローブカードを含む部
分の側面図である。 FIG. 2 is a side view of the portion including the probe card shown in FIG. 1.
第2図において、真空吸着台2に吸着された研
摩治具11は、プローブカード4の探針5と僅か
離れた位置にあり、真空吸着台2はこの位置で上
下動されて、プローブカード4の探針5と軽く接
触してまた離れるという研摩作動が行なわれる。 In FIG. 2, the polishing jig 11 attracted to the vacuum suction table 2 is at a position slightly apart from the probe 5 of the probe card 4, and the vacuum suction table 2 is moved up and down at this position, and the probe card 4 A polishing operation is performed in which the probe 5 makes light contact with the probe 5 and then separates again.
このように本発明のプローブカード探針研摩装
置によれば、プローブカードの探針がそれほど汚
染されていないうちに自動操作により定期的に研
摩が行なわれるので従来のように研摩忘れのため
に多くの検査ミスを出すこともなく、また、検査
の流れを不意に中断して検査能率を低下させるこ
ともない。 As described above, according to the probe card probe polishing device of the present invention, polishing is performed periodically by automatic operation while the probe card probe is not so contaminated. No inspection errors are made, and no unexpected interruption of the inspection flow reduces inspection efficiency.
第1図は本発明の一実施例のブロツク図、第2
図は第1図に示すプローブカードを含む部分の側
面図である。
1……ウエーハ供給装置、2……真空吸着台、
3……真空吸着台移動装置、4……プローブカー
ド、5……プローブカードの探針、8……ウエー
ハ収納台、9……計数装置、10……研摩制御装
置、11……研摩治具、12……研摩治具供給装
置、13……真空吸着台上下動装置、14……ウ
エーハ退避台、15……研摩治具収納装置、16
……研摩治具収納台。
FIG. 1 is a block diagram of one embodiment of the present invention, and FIG.
The figure is a side view of a portion including the probe card shown in FIG. 1. 1...Wafer supply device, 2...Vacuum suction table,
3... Vacuum suction table moving device, 4... Probe card, 5... Probe card probe, 8... Wafer storage stand, 9... Counting device, 10... Polishing control device, 11... Polishing jig , 12... Polishing jig supply device, 13... Vacuum suction table vertical movement device, 14... Wafer evacuation table, 15... Polishing jig storage device, 16
...A polishing jig storage stand.
Claims (1)
ーハを供給するウエーハ供給装置と、該真空吸着
台をプローブカードの下に移送し、ウエーハプロ
ーバの作動により該プローブカードの探針と該真
空吸着台上のウエーハに含まれる各素子の電極と
が接触され該ウエーハの電気特性検査後該真空吸
着台を該プローブカードの下から退避させる真空
吸着台移動装置とを含むウエーハ電気特性検査装
置に付加させるプローブカード探針研摩装置にお
いて、前記ウエーハ供給装置に結合され、所定の
供給ウエーハ枚数を計数する毎に出力信号を出す
計数装置と、前記ウエーハと類似形状の研摩治具
と、前記計数装置の出力を受け、前記連続供給の
ウエーハの間に前記研摩治具をはさませる研摩治
具供給装置と、該研摩治具を載置した真空吸着台
が前記プローブカードの下に運ばれたとき、前記
ウエーハプローバの作動の代わりに該真空吸着台
上の研摩治具を該プローブカードの探針と軽く接
触してまた離れる上下運動を該真空吸着台に与え
る真空吸着台上下動装置と、該プローブカードの
下から離脱して該研摩治具の収容位置に運ばれた
該研摩治具を研摩治具収納台に収納する研摩治具
収納装置とを含むことを特徴とするプローブカー
ド探針研摩装置。1. A vacuum suction table, a wafer supply device that supplies the wafer to be inspected to the vacuum suction table, the vacuum suction table is transferred under the probe card, and the probe of the probe card and the vacuum suction are moved by the operation of the wafer prober. Added to a wafer electrical characteristics testing device including a vacuum suction table moving device that makes contact with the electrodes of each element included in a wafer on the table and retracts the vacuum suction table from under the probe card after testing the electrical characteristics of the wafer. A probe card probe polishing apparatus comprising: a counting device coupled to the wafer supply device and outputting an output signal every time a predetermined number of supplied wafers is counted; a polishing jig having a similar shape to the wafer; When a polishing jig supply device that receives the output and sandwiches the polishing jig between the continuously supplied wafers, and a vacuum suction table on which the polishing jig is mounted are carried under the probe card, A vacuum suction table vertical movement device that causes the vacuum suction table to move up and down so that the polishing jig on the vacuum suction table makes light contact with the probe of the probe card and then moves away from the probe in place of the operation of the wafer prober; and the probe. a polishing jig storage device that stores the polishing jig removed from under the card and carried to the polishing jig storage position in a polishing jig storage stand; .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3647280A JPS56133843A (en) | 1980-03-21 | 1980-03-21 | Probe grinder for probe card |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3647280A JPS56133843A (en) | 1980-03-21 | 1980-03-21 | Probe grinder for probe card |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56133843A JPS56133843A (en) | 1981-10-20 |
| JPS6117141B2 true JPS6117141B2 (en) | 1986-05-06 |
Family
ID=12470751
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3647280A Granted JPS56133843A (en) | 1980-03-21 | 1980-03-21 | Probe grinder for probe card |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56133843A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6155338U (en) * | 1984-09-14 | 1986-04-14 | ||
| JPS6194347U (en) * | 1984-11-26 | 1986-06-18 | ||
| JP5381118B2 (en) * | 2009-01-21 | 2014-01-08 | 東京エレクトロン株式会社 | Probe device |
-
1980
- 1980-03-21 JP JP3647280A patent/JPS56133843A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56133843A (en) | 1981-10-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3135378B2 (en) | Semiconductor test equipment | |
| KR100377021B1 (en) | Probe cleaning method, probing method and prober | |
| US20080150559A1 (en) | Method for probing impact sensitve and thin layered substrate | |
| KR100745861B1 (en) | Mounting station's static eliminator and inspection device | |
| KR101331353B1 (en) | Method and apparatus for cleaning a probe card | |
| JPH0559841U (en) | Probing device and semiconductor wafer inspection system | |
| US3628144A (en) | Electrical contact cleaning device | |
| JPS6117141B2 (en) | ||
| JPH10163281A (en) | Semiconductor device and method of manufacturing the same | |
| JPH05136219A (en) | Inspection equipment | |
| KR101926256B1 (en) | Semiconductor inspection device | |
| US2872645A (en) | Mechanical apparatus | |
| CN115407179A (en) | Wafer testing method for improving accuracy by utilizing corresponding relation of testing welding spots | |
| JP2000164649A (en) | Needle cleaning mechanism for prober | |
| JP2006237413A (en) | Method for cleaning probe needle and wafer and wafer prober equipment to be used therefor | |
| CN216900791U (en) | Wafer acceptability testing device | |
| US9915699B2 (en) | Integrated fan-out pillar probe system | |
| JPH05288802A (en) | Semiconductor chip electrical characteristic inspection method and wafer prober | |
| JPH075229A (en) | Semiconductor manufacturing equipment | |
| JPH03290940A (en) | Wafer table of probing machine | |
| JPH03220742A (en) | Probing machine | |
| JPS63237429A (en) | Wafer prober | |
| JPS63170933A (en) | Wafer prober | |
| JPH0438847A (en) | Wafer prober | |
| JP2717884B2 (en) | Semiconductor wafer measurement method |