JPS6117799B2 - - Google Patents
Info
- Publication number
- JPS6117799B2 JPS6117799B2 JP57224862A JP22486282A JPS6117799B2 JP S6117799 B2 JPS6117799 B2 JP S6117799B2 JP 57224862 A JP57224862 A JP 57224862A JP 22486282 A JP22486282 A JP 22486282A JP S6117799 B2 JPS6117799 B2 JP S6117799B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- lead
- molybstate
- grown
- striae
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 41
- 230000003287 optical effect Effects 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 8
- 239000002994 raw material Substances 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 2
- XJUNRGGMKUAPAP-UHFFFAOYSA-N dioxido(dioxo)molybdenum;lead(2+) Chemical compound [Pb+2].[O-][Mo]([O-])(=O)=O XJUNRGGMKUAPAP-UHFFFAOYSA-N 0.000 claims 3
- 230000005540 biological transmission Effects 0.000 description 12
- 206010040925 Skin striae Diseases 0.000 description 11
- 238000007796 conventional method Methods 0.000 description 9
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 3
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/32—Titanates; Germanates; Molybdates; Tungstates
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】
本発明はモリブテン酸鉛単結晶からなる光学素
子の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing an optical element made of lead molybstate single crystal.
従来より、モリブテン酸鉛単結晶は超音波光変
調媒体として、レーザーを用したレーザープリン
ター等に使用されており、このモリブテン酸鉛単
結晶超音波光変調媒体は、(1)回折効率が大きく、
(2)光透過効率が良く、(3)超音波吸収が少なく、(4)
屈折率が大きく、(5)光学的に均一である等の特徴
を持つている。 Lead molybstate single crystal has traditionally been used as an ultrasonic light modulation medium in laser printers using lasers, etc. This lead molybstate single crystal ultrasonic light modulation medium has (1) high diffraction efficiency;
(2) Good light transmission efficiency, (3) Low ultrasonic absorption, (4)
It has characteristics such as a high refractive index and (5) optical uniformity.
一般に、超音波光変調器をレーザープリンター
等に使用する場合、短波長レーザー光を用いる方
が感光特性が良いため、現在用いられているHe
−Neレーザー（波長633nm）から次第に波長の
短いArレーザー（波長488nm）、He−Cdレーザ
ー（波長442nm）が使用されるようになつてき
た。このため、光変調媒体として使用されるモリ
ブテン酸鉛単結晶は、光学的により均質であり、
短波長での光透過効率が優れている必要がある。 Generally, when using an ultrasonic optical modulator in a laser printer, etc., it is better to use short wavelength laser light, so the currently used He
-Ne laser (wavelength: 633 nm) has been gradually replaced by shorter wavelength Ar laser (wavelength: 488 nm) and He-Cd laser (wavelength: 442 nm). For this reason, lead molybstate single crystals used as light modulating media are optically more homogeneous and
It is necessary to have excellent light transmission efficiency at short wavelengths.
しかし、一酸化鉛（PbO）および三酸化モリブ
デン（MoO3）の粉末原料を秤量・混合し融解
し、単結晶を引上げる従来の方法では、光学的物
質さを阻害する脈理の発生あるいは、光透過効率
を劣化させる霧状の気飽の発生を完全に抑えるこ
とができない。 However, the conventional method of weighing, mixing, and melting powdered raw materials of lead monoxide (PbO) and molybdenum trioxide (MoO 3 ) to pull a single crystal results in the formation of striae that impede optical materiality, or It is not possible to completely suppress the occurrence of mist-like vapors that degrade light transmission efficiency.
本発明は、このような従来の欠点を除去するこ
とを目的とし、モリブテン酸鉛単結晶塊を原料と
してこれを融解し、引上法により再びモリブテン
酸鉛単結晶を育成し、該育成した単結晶から光学
素子を切出すことを特徴とし、光学的に均質で、
短波長側レーザの光透過効率の優れた光学素子を
提供するものである。 The purpose of the present invention is to eliminate such conventional drawbacks by melting lead molybstate single crystal lumps as a raw material, growing lead molybstate single crystals again by the pulling method, and reproducing the grown lead molybstate single crystals. It is characterized by cutting out optical elements from crystals, and is optically homogeneous.
An object of the present invention is to provide an optical element with excellent light transmission efficiency for a laser on the short wavelength side.
以下、本発明を実施例にもとづき詳細に説明す
る。 Hereinafter, the present invention will be explained in detail based on examples.
前もつて、従来の方法により育成した、モリブ
テン酸鉛単結晶を適当な大きさに切断しエチルア
ルコール等有機溶剤中で超音波洗浄し、乾燥後、
この結晶塊を原料としてルツボ内で融解し、再度
引上げ法によつて単結晶を育成する。 Previously, lead molybstate single crystals grown by conventional methods were cut into appropriate sizes, ultrasonically cleaned in an organic solvent such as ethyl alcohol, and after drying,
This crystal mass is used as a raw material and melted in a crucible, and a single crystal is grown again by the pulling method.
この方法を用いて育成した単結晶の脈理および
霧状の気飽の発生状況を単結晶の育成条件である
結晶回転数と育成される結晶径に関してプロツト
したのが第１図である。 FIG. 1 is a plot of the occurrence of striae and mist-like air in a single crystal grown using this method in relation to the crystal rotation speed, which is the growth condition of the single crystal, and the diameter of the grown crystal.
第１図おいて、Ａの領域（縦線部分）の育成条
件で単結晶を育成ししし場合、育成される単結晶
には、脈理のみが発生する。Ｃの領域（横線部
分）の場合、霧状の気飽が発生する。しかし、Ｂ
の領域の条件で育成した場合、脈理も霧状の気飽
も発生することはない。 In FIG. 1, when a single crystal is grown under the growth conditions of region A (vertical line area), only striae occur in the grown single crystal. In the case of area C (horizontal line area), mist-like exhaustion occurs. However, B
When grown under the conditions of the above range, neither striae nor fog-like entrapment will occur.
第２図は、従来より行なわれている方法、即ち
PbOとMoO3の粉末原料を融解し単結晶を育成す
る方法の場合について同様にプロツトしものであ
る。第２図において、脈理が発生しないＡ領域
（縦線部分）は第１図の場合と変わらないが、霧
状の気飽が発生するＢ領域（横線部分）が広いた
め、脈理も霧状気胞も発生しない領域は存在しな
い。 Figure 2 shows the conventional method, namely
A similar plot is made for the method of growing a single crystal by melting PbO and MoO 3 powder raw materials. In Figure 2, area A (vertical line area) where striae do not occur is the same as in Figure 1, but area B (horizontal line area) where fog-like entrapment occurs is wide, so striae are also foggy. There are no areas where no air vesicles occur.
第１図、第２図より分かるように、従来の方法
による場合、脈理も霧状気飽も発生しないような
単結晶育成条件は存在しないが、本発明による場
合、脈理および霧状気飽をともに発生しない単結
晶を育成することができる。 As can be seen from FIGS. 1 and 2, when using the conventional method, there are no single crystal growth conditions under which neither striae nor mist entrapment occur, but when using the present invention, striae and mist entrapment do not occur. Single crystals that do not undergo saturation can be grown.
本発明による場合、内径50mmφの白金るつぼを
使用し、引上げ速度６mm／Ｈの場合、結晶径が22
mm程度ならば、20〜30RPMの結晶回転数で単結
晶を育成することにより脈理および霧状気胞の発
生を完全に抑えることができる。そのため、従来
の方法では成し得なかつた光学的に均質で短波長
側レーザの光透過効率の優れた光学素子を提供す
ることができる。 According to the present invention, when a platinum crucible with an inner diameter of 50 mmφ is used and the pulling speed is 6 mm/H, the crystal diameter is 22 mm.
If it is about mm, the generation of striae and misty vesicles can be completely suppressed by growing a single crystal at a crystal rotation speed of 20 to 30 RPM. Therefore, it is possible to provide an optical element that is optically homogeneous and has excellent light transmission efficiency for short wavelength lasers, which could not be achieved using conventional methods.
第３図は本発明および従来法により育成した単
結晶から、それぞれ切出した単結晶ブロツクにつ
いて、レーザ透過面を鏡面研磨し、分光光度計を
用いて、光波長−光透過効率の関係を測定しプロ
ツトしたものである。曲線ａは本発明による場合
であり、曲線ｂは従来法による場合である。 Figure 3 shows the relationship between light wavelength and light transmission efficiency of single crystal blocks cut out from single crystals grown by the present invention and the conventional method, the laser transmitting surfaces of which were polished to a mirror finish, and the relationship between light wavelength and light transmittance efficiency measured using a spectrophotometer. It was plotted. Curve a is the case according to the present invention, and curve b is the case according to the conventional method.
本発明による場合、単結晶内部に霧状気胞がな
いために、短波長側での光透過効率が優れ、特に
吸収端に近い、光波長442nm，He−Cdレーザの
透過効率が優れている。これは、従来、光変調媒
体としそモリブテン酸鉛単結晶を使用する場合
442nmの光波長をもつHe−Cdレーザに対しては
使用できないとされていた定説をくつがえす画期
的なものである。 In the case of the present invention, since there are no atomized pores inside the single crystal, the light transmission efficiency is excellent on the short wavelength side, and particularly the transmission efficiency of He-Cd laser at a light wavelength of 442 nm, which is close to the absorption edge, is excellent. This is traditionally the case when using a lead molybstate single crystal as a light modulating medium.
This is a breakthrough that overturns the established theory that it cannot be used for He-Cd lasers with an optical wavelength of 442 nm.
尚、第３図に示される光透過効率は、実際に超
音波光変調器として使用する場合に比べ低い値、
たとえば波長442nmの場合、光透過効率は65％を
示しているが、精度の良い光学研磨を行ない、適
正な反射防止膜を施すことにより光変調器として
使用するに十分な値、97％以上の値、を示すこと
が分かつている。 Note that the light transmission efficiency shown in FIG. 3 is a lower value than when actually used as an ultrasonic optical modulator.
For example, in the case of a wavelength of 442 nm, the light transmission efficiency is 65%, but by performing precise optical polishing and applying an appropriate anti-reflection coating, it can reach a value of 97% or more, which is sufficient for use as an optical modulator. It is known to indicate the value.
上述したように、本発明はモリブテン酸鉛単結
晶塊を原料としてこれを融解し、引上法により再
びモリブテン酸鉛単結晶を育成し、該育成した単
結晶から光学素子を切出すことを特徴とし、光学
的に均質で短波長側レーザの光透過効率の優れた
光学素子を提供できる。 As described above, the present invention is characterized by using a lead molybstate single crystal block as a raw material, melting it, growing a lead molybstate single crystal again by a pulling method, and cutting out an optical element from the grown single crystal. As a result, it is possible to provide an optical element that is optically homogeneous and has excellent light transmission efficiency for short wavelength lasers.
第１図は、本発明によるモリブテン酸鉛単結晶
の脈理及び霧状の気胞の発生状況を結晶回転数と
結晶径の関係おいて示した図であり、第２図は従
来の方法で育成されたモリブテン酸鉛単結晶に関
して第１図と同様にプロツトしたものである。第
３図は、モリブテン酸鉛単結晶光学素子の各透過
光波長における光透過効率の変化を示したもので
あり、曲線ａは本発明、曲線ｂは従来法について
示している。
Figure 1 is a diagram showing the occurrence of striae and mist-like gas vesicles in the lead molybstate single crystal according to the present invention in relation to the crystal rotation speed and crystal diameter, and Figure 2 is a diagram showing the occurrence of striae and mist-like vesicles in the lead molybstate single crystal grown by the conventional method. This is a plot similar to that shown in FIG. 1 for the lead molybstate single crystal obtained. FIG. 3 shows the change in light transmission efficiency at each transmitted light wavelength of a lead molybstate single crystal optical element, where curve a shows the present invention and curve b shows the conventional method.
Claims (1)
を融解し、引上法により再びモリブデン酸鉛単結
晶を育成し、該育成した単結晶から光学素子を切
出すことを特徴とするモリブテン酸鉛単結晶光学
素子の製造方法。1. A lead molybdate monocrystal, which is characterized by using a lead molybdate single crystal block as a raw material, melting it, growing a lead molybdate single crystal again by a pulling method, and cutting out an optical element from the grown single crystal. A method for manufacturing a crystal optical element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57224862A JPS59116200A (en) | 1982-12-23 | 1982-12-23 | Optical element of lead molybdate single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57224862A JPS59116200A (en) | 1982-12-23 | 1982-12-23 | Optical element of lead molybdate single crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59116200A JPS59116200A (en) | 1984-07-04 |
| JPS6117799B2 true JPS6117799B2 (en) | 1986-05-09 |
Family
ID=16820326
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57224862A Granted JPS59116200A (en) | 1982-12-23 | 1982-12-23 | Optical element of lead molybdate single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59116200A (en) |
-
1982
- 1982-12-23 JP JP57224862A patent/JPS59116200A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59116200A (en) | 1984-07-04 |
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