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JPS6125235B2 - - Google Patents
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JPS6125235B2 - - Google Patents

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Publication number
JPS6125235B2
JPS6125235B2 JP7687978A JP7687978A JPS6125235B2 JP S6125235 B2 JPS6125235 B2 JP S6125235B2 JP 7687978 A JP7687978 A JP 7687978A JP 7687978 A JP7687978 A JP 7687978A JP S6125235 B2 JPS6125235 B2 JP S6125235B2
Authority
JP
Japan
Prior art keywords
optical fiber
semiconductor laser
axis
light
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP7687978A
Other languages
Japanese (ja)
Other versions
JPS553688A (en
Inventor
Noboru Kurata
Takashi Tsutsuizumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP7687978A priority Critical patent/JPS553688A/en
Publication of JPS553688A publication Critical patent/JPS553688A/en
Publication of JPS6125235B2 publication Critical patent/JPS6125235B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Optical Couplings Of Light Guides (AREA)

Description

【発明の詳細な説明】 本発明は光の結合に関し、特に半導体レーザと
光フアイバを結合するにあたり半導体レーザの安
定した発光動作が得られる方法を提供することを
目的とする。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to optical coupling, and in particular, it is an object of the present invention to provide a method for coupling a semiconductor laser and an optical fiber, by which stable light emission operation of the semiconductor laser can be obtained.

従来の半導体レーザと光フアイバとの結合方法
を第1図に示す。半導体レーザ1の発光面2から
出射した光3は、光フアイバ4の入射端面5に入
射する。この時、半導体レーザ1から出射した光
のうち、光フアイバ4に入射する光の割合、すな
わち結合効率は、主に光フアイバの開口数(N.
A.)と、半導体レーザの発光分布で決まる。と
ころで半導体レーザ1から出射した光3が光フア
イバ4へ入射する際、一部の光が入射端面5で反
射し、反射光6となつて、発光面2にもどる。
今、この結合効率が小さい場合には反射光6も無
視できるが、結合効率が大きい場合は発光面2に
もどる反射光6の割合も大きくなり、その結果、
半導体レーザの出力光中に無視できない雑音が現
われ、発光動作が不安定となる欠点があつた。
A conventional method of coupling a semiconductor laser and an optical fiber is shown in FIG. Light 3 emitted from the light emitting surface 2 of the semiconductor laser 1 enters the input end surface 5 of the optical fiber 4 . At this time, the proportion of light that enters the optical fiber 4 out of the light emitted from the semiconductor laser 1, that is, the coupling efficiency, is mainly determined by the numerical aperture (N.
A.) and the emission distribution of the semiconductor laser. By the way, when the light 3 emitted from the semiconductor laser 1 enters the optical fiber 4, a part of the light is reflected by the entrance end face 5 and returns to the light emitting face 2 as reflected light 6.
Now, if this coupling efficiency is small, the reflected light 6 can also be ignored, but if the coupling efficiency is large, the proportion of the reflected light 6 that returns to the light emitting surface 2 will also increase, and as a result,
This has the drawback that non-negligible noise appears in the output light of the semiconductor laser, making the light emitting operation unstable.

本発明は上記で述べた欠点を解決した半導体レ
ーザと光フアイバの結合方法を提供するものでそ
の一実施例の構成を第2図に示す。なお以下の説
明において、図面中に示す同一番号は同一部分を
示している。
The present invention provides a method for coupling a semiconductor laser and an optical fiber, which solves the above-mentioned drawbacks, and the configuration of one embodiment thereof is shown in FIG. In the following description, the same numbers shown in the drawings indicate the same parts.

第2図において、1はストライプ形半導体レー
ザ、2は発光面、7は接合面、8は接合面を含む
接合平面、10は半導体レーザ1の発光分布、1
1は発光面2の中心に立てた発光面2に垂直な直
線で接合平面8内にある基線、4は光フアイバ、
12は光フアイバ軸、で基線11に対して傾いて
おり、9は光フアイバ軸12に対して斜めな入射
端面である。ここで、半導体レーザ1に対して光
フアイバ4は、次の関係になるように配置されて
いる。すなわち、斜めな入射端面9の長軸13が
接合平面8上にあり、短軸14が接合平面8に垂
直となるように配置されると共に、半導体レーザ
1から出射した基線上の光が、入射端面9に入射
し屈折した後に、光フアイバ軸12に沿つて光フ
アイバ4内を進むように、光フアイバ軸12を基
線11に対し傾けて配置している。
In FIG. 2, 1 is a striped semiconductor laser, 2 is a light emitting surface, 7 is a bonding surface, 8 is a bonding plane including the bonding surface, 10 is the emission distribution of the semiconductor laser 1, 1
1 is a base line which is a straight line perpendicular to the light emitting surface 2 and is located in the bonding plane 8, which is set at the center of the light emitting surface 2; 4 is an optical fiber;
Reference numeral 12 denotes an optical fiber axis which is inclined with respect to the base line 11, and 9 is an incident end face which is inclined with respect to the optical fiber axis 12. Here, the optical fiber 4 is arranged with respect to the semiconductor laser 1 in the following relationship. That is, the long axis 13 of the oblique incident end surface 9 is on the bonding plane 8 and the short axis 14 is perpendicular to the bonding plane 8, and the light on the base line emitted from the semiconductor laser 1 is The optical fiber axis 12 is arranged at an angle with respect to the base line 11 so that after entering the end face 9 and being refracted, the optical fiber advances within the optical fiber 4 along the optical fiber axis 12.

第3図および第4図は上記の構成の要部を示
し、これを用いてさらに説明する。第3図はA方
向から見た接合平面8上の半導体レーザ1および
光フアイバ4を示したものである。ここで20は
コア部、21はクラツド部である。光フアイバ軸
12に斜めな入射端面9は、基線11に対しても
斜めに配置されているため、光フアイバ4内に入
射できる角度で発光面2を出射した光15,16
の内、入射端面9で反射した光17,18は、再
び発光面2にもどることはない。入射端面9で反
射しない光19は、入射端面9で屈折して光フア
イバ4内に入る。この時、発光面2から出射した
光の大部分を光フアイバ4内に入射させるため
に、基線11に沿つて入射端面9に入射した光1
5が、屈折した後、光フアイバ軸と一致して進む
よう(入射光19)に光フアイバ軸12を基線1
1に対して傾けている。
FIGS. 3 and 4 show the main parts of the above configuration, and will be further explained using these. FIG. 3 shows the semiconductor laser 1 and the optical fiber 4 on the bonding plane 8 as seen from direction A. Here, 20 is a core part and 21 is a clad part. Since the entrance end surface 9 oblique to the optical fiber axis 12 is also arranged obliquely to the base line 11, the light 15, 16 emitted from the light emitting surface 2 at an angle that allows it to enter the optical fiber 4.
Of these, the lights 17 and 18 reflected by the incident end surface 9 do not return to the light emitting surface 2 again. Light 19 that is not reflected at the input end face 9 is refracted at the input end face 9 and enters the optical fiber 4 . At this time, in order to make most of the light emitted from the light emitting surface 2 enter the optical fiber 4, the light 1 that is incident on the incident end surface 9 along the base line 11 is
5 is refracted, the optical fiber axis 12 is aligned with the base line 1 so that (incident light 19) travels in line with the optical fiber axis.
It is tilted against 1.

第4図は発光面2の後側(B方向)より光フア
イバ端面9を見た図である。ここで10は半導体
レーザ1の代表的な発光分布を示す。一般にスト
ライプ形半導体レーザの発光角度は、接合平面8
上で小さく、接合平面8に垂直な方向に大きいの
で、発光分布10は楕円形をしている。ところ
で、第3図の説明で述べたように、光フアイバ軸
12を基線11に対して傾ける場合は、入射端面
9の長軸13を接合平面8上に置き、短軸14を
接合平面8に垂直となるように配置して光フアイ
バ軸12を接合平面8上で基線11に対して傾け
ると、第4図からもわかるように、発光面側から
見た光フアイバ端面の形状が楕円形を示す。それ
故発光分布10の形状とほとんど一致させること
ができるので前述の結合効率の損失はほとんどな
い。
FIG. 4 is a view of the optical fiber end face 9 viewed from the rear side (direction B) of the light emitting surface 2. Here, 10 indicates a typical emission distribution of the semiconductor laser 1. Generally, the emission angle of a striped semiconductor laser is 8
Since it is small at the top and large in the direction perpendicular to the junction plane 8, the emission distribution 10 has an elliptical shape. By the way, as described in the explanation of FIG. 3, when the optical fiber axis 12 is tilted with respect to the base line 11, the long axis 13 of the input end face 9 is placed on the bonding plane 8, and the short axis 14 is placed on the bonding plane 8. When the optical fiber axis 12 is arranged perpendicularly and tilted with respect to the base line 11 on the bonding plane 8, the shape of the end face of the optical fiber as seen from the light emitting surface becomes an ellipse, as can be seen from FIG. show. Therefore, since the shape of the light emission distribution 10 can be almost matched, there is almost no loss in coupling efficiency as described above.

本実施例によれば、光フアイバ端面9を光フア
イバ軸12および基線11に対して斜めにすると
ともに、基線11に沿つて入射端面9に入射した
光が屈折した後に光フアイバ軸12に沿つて進
み、さらに、半導体レーザ1の発光分布10の形
状と、発光面2から見た光フアイバの入射端面9
の形状をほとんど一致させるように光フアイバ4
を基線11に対して傾けたことにより、特にスト
ライプ形半導体レーザと光フアイバを結合する方
法において、 (i) 光フアイバの入射端面9での反射光が発光面
2にもどらないので、半導体レーザ1の出力光
中の雑音が少なく、安定した動作を行なう。
According to this embodiment, the optical fiber end face 9 is made oblique to the optical fiber axis 12 and the base line 11, and the light incident on the incident end face 9 along the base line 11 is refracted and then refracted along the optical fiber axis 12. Further, the shape of the light emission distribution 10 of the semiconductor laser 1 and the incident end face 9 of the optical fiber viewed from the light emitting surface 2 are explained.
The optical fiber 4 is arranged so that the shape of the optical fiber 4 almost matches the shape of the
Especially in the method of coupling a striped semiconductor laser and an optical fiber, (i) the reflected light at the input end face 9 of the optical fiber does not return to the light emitting surface 2; There is little noise in the output light and stable operation is achieved.

(ii) 半導体レーザ1の発光分布10に合わせて、
光フアイバ4を配置することにより、結合効率
の損失はほとんどない。
(ii) In accordance with the emission distribution 10 of the semiconductor laser 1,
By arranging the optical fiber 4, there is almost no loss in coupling efficiency.

という優れた効果を奏する。It has this excellent effect.

以上のように本発明は、半導体レーザと光フア
イバを結合するにあたり、結合効率を損なうこと
なく、半導体レーザの出力光中の雑音を激減さ
せ、発光動作を安定とする工業的にも優れた結合
方方法を提供するものである。
As described above, the present invention provides an industrially excellent coupling that dramatically reduces noise in the output light of the semiconductor laser and stabilizes the light emission operation without impairing the coupling efficiency when coupling a semiconductor laser and an optical fiber. It provides a method.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の結合方法を説明する斜視図、第
2図は本発明の結合方法の一実施例を示す斜視
図、第3図は本実施例の要部を説明する上面図、
第4図は本実施例の要部を説明する正面図であ
る。 1……半導体レーザ、2……発光面、4……光
フアイバ、7……接合面、8……接合平面、9…
…入射端面、11……基線、12……光フアイバ
軸、13……入射端面の長軸、14……入射端面
の短軸、15……発光面に垂直な光、19……光
フアイバ軸に沿つて進む光。
Fig. 1 is a perspective view illustrating a conventional coupling method, Fig. 2 is a perspective view illustrating an embodiment of the coupling method of the present invention, and Fig. 3 is a top view illustrating main parts of the present embodiment.
FIG. 4 is a front view illustrating the main parts of this embodiment. DESCRIPTION OF SYMBOLS 1... Semiconductor laser, 2... Light emitting surface, 4... Optical fiber, 7... Bonding surface, 8... Bonding plane, 9...
...Incidence end face, 11...Base line, 12...Optical fiber axis, 13...Long axis of incidence end face, 14...Short axis of incidence end face, 15...Light perpendicular to light emitting surface, 19...Optical fiber axis Light traveling along.

Claims (1)

【特許請求の範囲】 1 半導体レーザの発光面に結合する光フアイバ
の入射端面を、該光フアイバの軸に対して斜めと
し、該入射端面の長軸が、前記半導体レーザの接
合面と同一面上にあり、該入射端面の短軸が、該
接合面に対し垂直となるように配置すると共に、
該接合面と同一面上において、前記半導体レーザ
の発光面に垂直な方向に対し、前記光フアイバ軸
を傾けたことを特徴とする半導体レーザと光フア
イバの結合方法。 2 光フアイバ軸は、斜めの入射端面より入射す
る、前記半導体レーザの発光面の中心から発する
発光面に垂直な光が、前記光フアイバ内で、光フ
アイバ軸にほとんど沿つて進行するように該光フ
アイバ軸を前記発光面に垂直な光の方向に対して
傾けたことを特徴とする特許請求の範囲第1項記
載の半導体レーザと光フアイバの結合方法。
[Claims] 1. The input end face of the optical fiber coupled to the light emitting surface of the semiconductor laser is oblique to the axis of the optical fiber, and the long axis of the input end face is in the same plane as the bonding surface of the semiconductor laser. and arranged so that the minor axis of the incident end surface is perpendicular to the bonding surface,
A method for coupling a semiconductor laser and an optical fiber, characterized in that the axis of the optical fiber is tilted on the same plane as the bonding surface with respect to a direction perpendicular to the light emitting surface of the semiconductor laser. 2. The optical fiber axis is arranged such that light emitted from the center of the light emitting surface of the semiconductor laser and perpendicular to the light emitting surface, which enters from the oblique entrance end face, travels within the optical fiber almost along the optical fiber axis. 2. The method of coupling a semiconductor laser and an optical fiber according to claim 1, wherein the optical fiber axis is tilted with respect to the direction of light perpendicular to the light emitting surface.
JP7687978A 1978-06-23 1978-06-23 Method of coupling semiconductor laser and photo-fiber Granted JPS553688A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7687978A JPS553688A (en) 1978-06-23 1978-06-23 Method of coupling semiconductor laser and photo-fiber

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7687978A JPS553688A (en) 1978-06-23 1978-06-23 Method of coupling semiconductor laser and photo-fiber

Publications (2)

Publication Number Publication Date
JPS553688A JPS553688A (en) 1980-01-11
JPS6125235B2 true JPS6125235B2 (en) 1986-06-14

Family

ID=13617907

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7687978A Granted JPS553688A (en) 1978-06-23 1978-06-23 Method of coupling semiconductor laser and photo-fiber

Country Status (1)

Country Link
JP (1) JPS553688A (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961815A (en) * 1982-09-30 1984-04-09 Fujitsu Ltd Separation and composition system of light polarization
JPS60191211A (en) * 1984-03-12 1985-09-28 Nippon Sheet Glass Co Ltd Optical system for connecting single mode optical fiber and light source
JPS6167809A (en) * 1984-09-12 1986-04-08 Matsushita Electric Ind Co Ltd semiconductor laser module
JPH0612367B2 (en) * 1986-10-09 1994-02-16 松下電器産業株式会社 Method for connecting semiconductor laser and optical fiber
JPH0455007U (en) * 1990-09-18 1992-05-12
JPH08160257A (en) * 1994-10-07 1996-06-21 Ricoh Co Ltd Optical transmission module mounting structure
JP2002048948A (en) 2000-08-04 2002-02-15 Sharp Corp Optical communication module

Also Published As

Publication number Publication date
JPS553688A (en) 1980-01-11

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