JPS6131580B2 - - Google Patents
Info
- Publication number
- JPS6131580B2 JPS6131580B2 JP1717877A JP1717877A JPS6131580B2 JP S6131580 B2 JPS6131580 B2 JP S6131580B2 JP 1717877 A JP1717877 A JP 1717877A JP 1717877 A JP1717877 A JP 1717877A JP S6131580 B2 JPS6131580 B2 JP S6131580B2
- Authority
- JP
- Japan
- Prior art keywords
- phosphor layer
- substrate
- input surface
- center
- periphery
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 33
- 238000007740 vapor deposition Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 4
- 239000003513 alkali Substances 0.000 claims description 3
- 150000004820 halides Chemical class 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 238000005192 partition Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 36
- 230000002093 peripheral effect Effects 0.000 description 11
- 230000005855 radiation Effects 0.000 description 8
- 238000004876 x-ray fluorescence Methods 0.000 description 5
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910001120 nichrome Inorganic materials 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- DERRCVPMYGOTDB-UHFFFAOYSA-M P.[I-].I.I.I.[Cs+] Chemical compound P.[I-].I.I.I.[Cs+] DERRCVPMYGOTDB-UHFFFAOYSA-M 0.000 description 1
- QHRPVRRJYMWFKB-UHFFFAOYSA-N [Sb].[Cs] Chemical compound [Sb].[Cs] QHRPVRRJYMWFKB-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
Description
【発明の詳細な説明】
本発明はX線等の放射線像を可視像に変換する
像増強管の特に入力面の製造方法の改良に関す
る。
X線などの高エネルギー放射線を光に変換して
より明るい可視像を得る像増強管は前記放射線に
よる像を光電子像に変換する入力面と、入力面か
ら放射された光電子像を可視像に変換する出力面
を備えている。
通常入力面は放射線像を透過しやすい基板とし
て例えばアルミニウムを用い、この基板上に放射
線によつて効率よく発光するアルカリハライド螢
光体層を蒸着によつて形成し、さらにこの螢光体
の発光に感応する物質例えばアンチモン―セシウ
ムからなる光電面によつて構成されている。
このような像増強管は画面の全域にわたつて明
るさ(輝度)が一様で、かつ解像度も中央部と同
様全域にわたつて良いことが要求される。
しかしながら従来上述の課題を充分満足に解決
した入力面はない。それは像増強管の特性に由来
するものと入力面の特に螢光体層の特性に由来す
る。
即ち、例えば輝度の場合、放射線源は十分に小
さく(点線とみなせる)像増強管との距離も1メ
ートル内外である。したがつて像増強管に入射し
た放射線の強度は中央部にくらべて周辺部の方が
小さい。さらに光電面から放出された光電子も中
央部にくらべ周辺部から放出されたものは斜方向
から入射するため単位面積当りの発光強度が弱い
ので出力面の発光が弱い。これらの理由により螢
光体層の厚さが均一で光電子放射能が同じであつ
ても明るさは中央部に対し周辺部では約70%しか
得られない。
解像度についても被写体を透過し入力面に入射
した放射線像は中央部より周辺部で画像の密度が
粗であり、さらに螢光体層では透過距離が中央部
より周辺部で長くなり光像の拡散も大きい。光電
面から放出された光電子も周辺部から放出された
ものは強い偏向を受けると共に飛程距離も長いの
で出力面で結像も中央部にくらべて甘くなる。こ
れらの理由により例えば螢光体層の厚さが均一で
中央部の解像度が28p/cmの入力面でも周辺部
では25p/cm〜22p/cmしか得られない。
入力面で輝度の均一性を向上させるために周辺
部の螢光体層の膜厚を増加すると周辺部の解像度
が更に減少するし、周辺の解像度を向上させるた
めに周辺部の螢光体層の膜厚を減らすと輝度の不
均衡がさらに進行するという矛盾を有する。
本発明は従来上述の理由でできなかつた解像度
の低下をともなわずに明るさの均一性を向上させ
る像増強管用入力面の製造方法に関する。
第1図は本発明を例えばX線像から光像に変換
するX線螢光増倍管に適用したものである。すな
わちX線螢光増倍管はガラスよりなる外囲器1と
このガラス外囲器1内に配設された入力面2、出
力面3、集束電極4、加速電極5等よりなる。X
線6が被写体7に照射され、被写体7のX線吸収
能により変調されたX線像が外囲器1を透過し、
入力面2の螢光体層9で光を発する。この光は中
間層薄膜10を透過し光電面11から光電子12
を放出する。光電子12は集束電極5により加速
されて出力面3上に入力面で得られた光像より数
千倍明るい光像を再現する。
本実施例において入力面2は第2図に示すよう
な構造を有する。すなわち基板21とこの基板2
1の一表面に形成された多数のモザイク構造22
(図において1点鎖線で示す位置より上部の基板
構造)を区画する微細な溝部23と、前記モザイ
ク構造面上に蒸着されこの面にほぼ垂直方向に延
びた沃化セシウム等からなる螢光体層24の結晶
と、この螢光体層24上に蒸着された例えばアル
ミナよりなる中間層薄膜25を介して形成された
光電面26とからなる。前記螢光体層24は溝部
23によつて区画されるモザイク構造22間の空
隙27によつてそれぞれ光学的に独立した螢光体
ブロツク28を有する。
前記入力面は基板21の溝部23からひきつが
れて螢光体層24中に形成された空隙27によつ
て螢光体ブロツク28を区画し、螢光体ブロツク
28内で発光した光はブロツク内で反射を繰返し
光電面側へ取り出される(光誘導効果)。その結
果、螢光体層24での光の拡散が減少し、高い解
像度を有する入力面が得られる。解像度の良否は
螢光体層24内に形成される空隙27の消長によ
つて左右される。空隙27が途中で消滅しないで
完全に表面層まで残ると表面層までそれぞれ弧立
した螢光体ブロツクが形成され、さらにその上面
に光電面26が形成されても円滑な光電子放出が
行われないという致命的な欠点となる。
本実施例の入力面は螢光体層の厚さが中央部か
ら周辺部にかけて逐次増加してゆき最外周の螢光
体層が最も厚い。例えば9インチの大きさの入力
面で中央部の螢光体層24の厚さは150ミクロン
で周辺部では215ミクロンを示した。このような
入力面ではX線螢光増倍管に適用した場合の明る
さの比は1:0.95で全面に亘つて略均一な明るさ
のものが得らる。さらに周辺部の螢光体層厚さが
増加したことによつておこる解像度の低下は、基
板21の表面に形成された溝部23からひきつが
れて螢光体層24内に存在する空隙27を表面層
近くまで残すことによつて向上させ中央部との平
準化をはかつている。螢光体層24内に形成され
る空隙27の消長は螢光体層24を形成する蒸着
条件によつて制御することができる。例えば蒸着
時の基板温度を110℃に設定し沃化セシウムを7
ミクロン/分の速度で蒸着すると中央部の螢光体
層の厚さが150ミクロンの時、入力面の中央部で
34〜37p/cmの解像度が得られる。一方、中央
部の蛍光体層の厚さが220ミクロンの入力面では
蒸着時の基板温度を80℃に設定し、7ミクロン/
分の蒸着速度で形成すると中央部で31〜34p/
cmの解像度が得られる。すなわち蒸着時の基板温
度が低い方が螢光体層内に空隙が残りやすい。従
つて基板に対して適度の膜厚分布を与える位置に
蒸発源を設定し、基板温度は中央部より周辺部が
低くなるように設定して蒸着を行なうことによつ
て明るさが全面にわたつて均一でかつ解像度も中
央部と周辺部で殆んど変らないX線螢光増倍用入
力面を得ることができる。
以下本発明の入力面の作成方法の一実施例につ
いて第3図を参照して説明する。
厚さ0.5mm、直径が240mmのアルミニウム基板3
1に後で螢光体層を形成する面を陽極酸化法によ
り処理する。陽極酸化は例えば3%修酸溶液中で
約2時間1A/dm2の通電を行う。次いで沸騰水
中で約2時間封孔処理を行う。これに250℃以上
で熱処理行うと巾が3〜5ミクロンの微細な溝3
2によつて隔絶されたモザイク構造33の表面が
形成される。
次に真空中で前記処理を終了した基板表面に沃
化セシウム螢光体を蒸着する。前記処理を終了し
た基板31の表面を下方に向けて基台37の上に
設置し、基台37は真空槽基板36を経て外部か
ら駆動させ回転する。基板31の上部には基板用
発熱体38が配設され、ベルジヤー40の頂部に
固定されている。発熱体38はステンレス製で基
板31と同じ曲率を有する有蓋円筒形で蓋の内面
にニクロム線38が中央部で密に周辺部が粗く配
設されている。基板31の下方にタンタルを加工
して形成したボート34に沃化セシウム35を充
填した蒸発源を対向して設置する。ボートの上部
には熱遮へい板41がありボート34は予め求め
られている輝度が均一になる螢光体層42の膜厚
分布が得られる位置へ設置される。
真空槽を排気し圧力が10-6Torr台で蒸着を開
始する。基台37と基板31を20RPMの速度で
回転させながらニクロム線39に通電し基板31
の中央部の温度を110℃に設定すると周辺部の温
度は、ニクロム線の巻回密度の相違により80℃に
保持される。かかる状態においてボート34を加
熱して沃化セシウム35を5〜10ミクロン/分の
蒸着速度に制御しながら基板31上に螢光体層4
2を形成する。螢光体層42の厚さは中央部が最
もうすく150ミクロンで次第に厚くなり最外周で
は210ミクロンである。このような条件で形成さ
れた螢光体層は基板31のモザイク構造面33上
に直径が1〜4ミクロンの柱状結晶が成長し、基
板31の溝32の部分から形成される空隙43に
よつて柱状結晶の束からなる螢光体ブロツク44
が基板から略垂直方向に形成されている。
さらに螢光体層表面に中間層25を形成した入
力面で従来と同様の方法でX線螢光増倍管を作成
した結果明るさの比は中心部1に対し周辺部で
0.94を示し従来の周辺部の明るさ比0.8に比して
全面にわたつて良好な均一性を得ることができ
た。また、解像度は中央部で37p/cm、周辺部
で34〜37p/cmが得られた。これは従来、中央
部及び周辺部まで210ミクロンの厚さの蛍光体層
を有する場合の解像度が中央部で37p/cm、周
辺部で30〜32p/cmのものに比べ周辺部の解像
度の低下が著しく改善されたことを示す。
以上述べた様に本発明は基板表面に微細な溝に
よつてモザイク構造を形成し、このモザイク面上
にアルカリハライドからなる螢光体を中央部から
周辺部にかけて厚く蒸着して輝度の均一化をはか
るとともに、これにともなつておこる周辺部の解
像度の大巾な低下は、前記蒸着工程で基板に付与
する温度を中央部から周辺部にかけて低い基板の
溝から引きつがれて螢光体層内に形成される空隙
を中央部より周辺部で長く残存させて光誘導効果
を増強して解像度の低下防ぐと共に均一性をも向
上させたものである。 DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in a method of manufacturing an image intensifier tube, particularly an input surface, for converting a radiation image such as an X-ray image into a visible image. An image intensifier tube that converts high-energy radiation such as X-rays into light to create a brighter visible image has an input surface that converts an image caused by the radiation into a photoelectron image, and a photoelectron image emitted from the input surface that converts the photoelectron image into a visible image. It has an output surface that converts to Usually, the input surface uses aluminum as a substrate that easily transmits radiation images, and on this substrate, an alkali halide phosphor layer that efficiently emits light by radiation is formed by vapor deposition, and then the phosphor emits light. It consists of a photocathode made of a material sensitive to ions, such as antimony-cesium. Such an image intensifier tube is required to have uniform brightness (brightness) over the entire area of the screen and good resolution over the entire area as well as the central area. However, there is no conventional input surface that satisfactorily solves the above-mentioned problems. It originates from the characteristics of the image intensifier tube and from the characteristics of the input surface, especially the phosphor layer. That is, for example, in the case of brightness, the radiation source is sufficiently small (can be regarded as a dotted line) and the distance from the image intensifier tube is about 1 meter. Therefore, the intensity of the radiation incident on the image intensifier tube is smaller at the periphery than at the center. Furthermore, since photoelectrons emitted from the photocathode are emitted from the peripheral part from the oblique direction and have a weaker emission intensity per unit area than from the central part, the emission from the output surface is weaker. For these reasons, even if the thickness of the phosphor layer is uniform and the photoelectron emissivity is the same, the brightness in the peripheral area is only about 70% that in the central area. In terms of resolution, the radiation image that passes through the object and enters the input screen has a lower density at the periphery than at the center, and in the phosphor layer, the transmission distance is longer at the periphery than at the center, resulting in light image diffusion. It's also big. Photoelectrons emitted from the photocathode and those emitted from the periphery are strongly deflected and have a long range, so the image formation at the output surface is also weaker than at the center. For these reasons, for example, even if the phosphor layer has a uniform thickness and the input surface has a resolution of 28 p/cm at the center, only 25 p/cm to 22 p/cm can be obtained at the periphery. If the thickness of the phosphor layer in the peripheral area is increased to improve the uniformity of brightness on the input surface, the resolution in the peripheral area will further decrease. There is a paradox in that reducing the film thickness of the film further increases the imbalance in brightness. The present invention relates to a method of manufacturing an input surface for an image intensifier tube that improves brightness uniformity without deteriorating resolution, which has conventionally been impossible for the above-mentioned reasons. FIG. 1 shows the present invention applied to, for example, an X-ray fluorescence multiplier tube that converts an X-ray image into a light image. That is, the X-ray fluorescence multiplier tube consists of an envelope 1 made of glass, an input surface 2, an output surface 3, a focusing electrode 4, an accelerating electrode 5, etc. arranged within the glass envelope 1. X
The ray 6 is irradiated onto the subject 7, and the X-ray image modulated by the X-ray absorption ability of the subject 7 is transmitted through the envelope 1.
A phosphor layer 9 on the input surface 2 emits light. This light passes through the intermediate layer thin film 10, and from the photocathode 11, the photoelectrons 12
emit. The photoelectrons 12 are accelerated by the focusing electrode 5 and reproduce on the output surface 3 an optical image several thousand times brighter than the optical image obtained on the input surface. In this embodiment, the input surface 2 has a structure as shown in FIG. That is, the substrate 21 and this substrate 2
A large number of mosaic structures 22 formed on one surface of 1
(the substrate structure above the position indicated by the dashed-dotted line in the figure) and a phosphor made of cesium iodide or the like deposited on the mosaic structure surface and extending almost perpendicularly to this surface. It consists of a crystal layer 24 and a photocathode 26 formed via an intermediate thin film 25 made of, for example, alumina, which is deposited on the phosphor layer 24. The phosphor layer 24 has phosphor blocks 28 that are optically independent from each other by gaps 27 between the mosaic structures 22 defined by grooves 23. The input surface is drawn from the groove 23 of the substrate 21 and defines a phosphor block 28 by a gap 27 formed in the phosphor layer 24, and the light emitted within the phosphor block 28 is blocked. It is repeatedly reflected inside and taken out to the photocathode side (light induction effect). As a result, light scattering in the phosphor layer 24 is reduced and an input surface with high resolution is obtained. The quality of the resolution depends on the length and width of the voids 27 formed within the phosphor layer 24. If the voids 27 do not disappear midway and remain completely on the surface layer, phosphor blocks are formed that stand up to the surface layer, and even if the photocathode 26 is formed on the top surface, smooth photoelectron emission will not occur. This is a fatal flaw. In the input surface of this embodiment, the thickness of the phosphor layer gradually increases from the center to the periphery, and the phosphor layer at the outermost periphery is the thickest. For example, for a 9 inch input surface, the thickness of the phosphor layer 24 in the center was 150 microns and at the periphery it was 215 microns. In such an input surface, when applied to an X-ray fluorescence multiplier tube, the brightness ratio is 1:0.95, and substantially uniform brightness can be obtained over the entire surface. Furthermore, the decrease in resolution caused by the increase in the thickness of the phosphor layer in the peripheral area is caused by the voids 27 in the phosphor layer 24 that are drawn from the grooves 23 formed on the surface of the substrate 21. By leaving it close to the surface layer, it is improved and leveled with the center. The growth and development of the voids 27 formed within the phosphor layer 24 can be controlled by the deposition conditions for forming the phosphor layer 24. For example, the substrate temperature during vapor deposition is set to 110℃, and cesium iodide is
When deposited at a rate of microns/minute, when the thickness of the central phosphor layer is 150 microns, the central part of the input surface
A resolution of 34 to 37 p/cm can be obtained. On the other hand, for the input surface where the thickness of the central phosphor layer is 220 microns, the substrate temperature during vapor deposition is set at 80°C, and the thickness of the phosphor layer is 7 microns/
When formed at a deposition rate of 31 to 34p/min in the center
A resolution of cm can be obtained. That is, the lower the substrate temperature during vapor deposition, the more likely voids remain in the phosphor layer. Therefore, by setting the evaporation source at a position that provides an appropriate film thickness distribution on the substrate and performing evaporation with the substrate temperature set so that the peripheral area is lower than the central area, brightness can be spread over the entire surface. As a result, it is possible to obtain an input surface for X-ray fluorescence multiplication that is uniform and has almost the same resolution between the center and the periphery. An embodiment of the method for creating an input surface according to the present invention will be described below with reference to FIG. Aluminum substrate 3 with a thickness of 0.5 mm and a diameter of 240 mm
In step 1, the surface on which the phosphor layer will later be formed is treated by an anodic oxidation method. For anodizing, for example, a current of 1 A/dm 2 is applied for about 2 hours in a 3% oxalic acid solution. Then, sealing treatment is performed in boiling water for about 2 hours. When this is heat treated at 250℃ or higher, fine grooves 3 with a width of 3 to 5 microns are created.
A surface of a mosaic structure 33 separated by 2 is formed. Next, a cesium iodide phosphor is deposited on the surface of the substrate after the above treatment in a vacuum. The substrate 31 that has been processed is placed on a base 37 with its surface facing downward, and the base 37 is driven and rotated from the outside via the vacuum chamber substrate 36. A substrate heating element 38 is disposed on the upper part of the substrate 31 and is fixed to the top of the bell gear 40. The heating element 38 is made of stainless steel and has a cylindrical shape with a lid having the same curvature as the substrate 31. On the inner surface of the lid, nichrome wires 38 are arranged densely in the center and coarsely in the periphery. An evaporation source filled with cesium iodide 35 is placed in a boat 34 formed by processing tantalum below the substrate 31 , facing the boat 34. A heat shield plate 41 is provided on the upper part of the boat, and the boat 34 is installed at a position where the thickness distribution of the phosphor layer 42 can be obtained so that the luminance is uniform as determined in advance. Evacuate the vacuum chamber and start deposition at a pressure of 10 -6 Torr. While rotating the base 37 and the board 31 at a speed of 20 RPM, the nichrome wire 39 is energized to connect the board 31.
When the temperature at the center of the wire is set to 110°C, the temperature at the periphery is maintained at 80°C due to the difference in the winding density of the nichrome wire. In this state, the boat 34 is heated to form a phosphor layer 4 on the substrate 31 while controlling the deposition rate of cesium iodide 35 at a rate of 5 to 10 microns/minute.
form 2. The thickness of the phosphor layer 42 is the thinnest at the center, at 150 microns, and gradually increases to 210 microns at the outermost periphery. In the phosphor layer formed under these conditions, columnar crystals with a diameter of 1 to 4 microns grow on the mosaic structure surface 33 of the substrate 31 , and the voids 43 formed from the grooves 32 of the substrate 31 grow. A phosphor block 44 consisting of a bundle of columnar crystals
is formed substantially perpendicularly from the substrate. Furthermore, an X-ray fluorophore multiplier tube was fabricated in the same manner as before using an input surface with an intermediate layer 25 formed on the surface of the phosphor layer.
The brightness ratio of the peripheral area was 0.94, which was better than the conventional brightness ratio of 0.8 over the entire surface. The resolution was 37p/cm in the center and 34-37p/cm in the periphery. This is because the resolution in the peripheral area is lower compared to the conventional case where the resolution was 37p/cm in the center and 30 to 32p/cm in the peripheral area when the phosphor layer was 210 microns thick from the center to the periphery. This shows that the results have been significantly improved. As described above, the present invention forms a mosaic structure with fine grooves on the substrate surface, and on this mosaic surface, a phosphor made of alkali halide is deposited thickly from the center to the periphery to make the brightness uniform. At the same time, the resulting large drop in resolution in the peripheral area is caused by the temperature applied to the substrate in the vapor deposition process being pulled from the grooves of the substrate, which is low from the center to the peripheral area, causing the phosphor layer to deteriorate. The voids formed inside are made to remain longer at the periphery than at the center to enhance the light guiding effect, prevent a decrease in resolution, and improve uniformity.
第1図は本発明の一実施例のX線螢光増倍管を
示す慨略図、第2図は本発明に係る入力面の一部
を示す断面図、第3図は本発明に係る入力面の製
造工程を説明するための蒸着装置の概略図であ
る。
1…入力面、9,24,42…螢光体層、1
0,25…中間層、11,26…光電面、21,
31…基板、22,33…基板のモザイク構造、
23,32…基板の溝部。
FIG. 1 is a schematic diagram showing an X-ray fluorescence multiplier tube according to an embodiment of the present invention, FIG. 2 is a sectional view showing a part of the input surface according to the present invention, and FIG. 3 is an input diagram according to the present invention. FIG. 2 is a schematic diagram of a vapor deposition apparatus for explaining a surface manufacturing process. 1... Input surface, 9, 24, 42... Fluorescent layer, 1
0, 25... intermediate layer, 11, 26... photocathode, 21,
31 ...Substrate, 22,33...Mosaic structure of substrate,
23, 32...Groove portion of the substrate.
Claims (1)
モザイク構造を区画する微細な溝部と、前記モザ
イク構造面上に蒸着されたアルカリハライドから
なる蛍光体層と、この蛍光体層上に直接又は中間
層薄膜を介して形成された光電面とを有する入力
面を具備する像増強管の製造方法において、前記
蛍光体層の蒸着工程で前基板に付与する温度を中
央部から周辺部に向けて低くし蛍光体層の厚さは
中央部から周辺にかけて増加させることを特徴と
する像増強管用入力面の製造方法。1. A substrate, fine grooves that partition a large number of mosaic structures formed on the surface of the substrate, a phosphor layer made of alkali halide deposited on the mosaic structure surface, and a phosphor layer formed directly or on the phosphor layer. In the method for manufacturing an image intensifier tube having an input surface having a photocathode formed through an intermediate thin film, the temperature applied to the front substrate in the phosphor layer vapor deposition step is directed from the center toward the periphery. A method for manufacturing an input surface for an image intensifier tube, characterized in that the thickness of the phosphor layer is increased from the center to the periphery.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1717877A JPS53102663A (en) | 1977-02-21 | 1977-02-21 | Manufacture for input surface of image intensifier tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1717877A JPS53102663A (en) | 1977-02-21 | 1977-02-21 | Manufacture for input surface of image intensifier tube |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53102663A JPS53102663A (en) | 1978-09-07 |
| JPS6131580B2 true JPS6131580B2 (en) | 1986-07-21 |
Family
ID=11936687
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1717877A Granted JPS53102663A (en) | 1977-02-21 | 1977-02-21 | Manufacture for input surface of image intensifier tube |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS53102663A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0160792U (en) * | 1987-10-02 | 1989-04-18 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2514952B2 (en) * | 1987-03-13 | 1996-07-10 | 株式会社東芝 | X-ray image tube |
| EP0282088B1 (en) * | 1987-03-13 | 1991-12-04 | Kabushiki Kaisha Toshiba | X-ray image intensifier |
-
1977
- 1977-02-21 JP JP1717877A patent/JPS53102663A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0160792U (en) * | 1987-10-02 | 1989-04-18 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53102663A (en) | 1978-09-07 |
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