JPS6131589B2 - - Google Patents
Info
- Publication number
- JPS6131589B2 JPS6131589B2 JP55014763A JP1476380A JPS6131589B2 JP S6131589 B2 JPS6131589 B2 JP S6131589B2 JP 55014763 A JP55014763 A JP 55014763A JP 1476380 A JP1476380 A JP 1476380A JP S6131589 B2 JPS6131589 B2 JP S6131589B2
- Authority
- JP
- Japan
- Prior art keywords
- anode
- container
- ray tube
- copper
- copper material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 33
- 229910052802 copper Inorganic materials 0.000 claims description 33
- 239000010949 copper Substances 0.000 claims description 33
- 239000013078 crystal Substances 0.000 claims description 21
- 238000005266 casting Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 10
- 238000001816 cooling Methods 0.000 claims description 7
- 230000008018 melting Effects 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 230000003247 decreasing effect Effects 0.000 claims description 2
- 238000007493 shaping process Methods 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 12
- 239000001257 hydrogen Substances 0.000 description 9
- 229910052739 hydrogen Inorganic materials 0.000 description 9
- 238000002425 crystallisation Methods 0.000 description 8
- 230000008025 crystallization Effects 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 6
- 238000007711 solidification Methods 0.000 description 6
- 230000008023 solidification Effects 0.000 description 6
- 230000008646 thermal stress Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 238000010583 slow cooling Methods 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 239000010405 anode material Substances 0.000 description 3
- 229910002114 biscuit porcelain Inorganic materials 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 230000006911 nucleation Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 238000004781 supercooling Methods 0.000 description 2
- 238000005162 X-ray Laue diffraction Methods 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J35/00—X-ray tubes
- H01J35/02—Details
- H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
- H01J35/08—Anodes; Anti cathodes
- H01J35/12—Cooling non-rotary anodes
Description
【発明の詳細な説明】
本発明はX線陽極およびその製造方法に係り、
とくに鋳込み銅材の結晶構造改良により高負荷X
線管の高品質、長寿命に寄与する陽極及びその製
造方法を提供することを目的とする。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an X-ray anode and a method for manufacturing the same;
In particular, the improved crystal structure of the cast copper material allows for high loads
The purpose of the present invention is to provide an anode that contributes to high quality and long life of wire tubes and a method for manufacturing the same.
一般に例えば固定陽極X線管は第1図に示すよ
うに構成され、ガラスからなる外囲器1内の一方
に陽極基体2が金属からなる封止リング3により
支持されて配設されている。また外囲器1内の他
方には陽極2に対向して陰極フイラメント5がカ
ツプ6を貫通したフイラメント端子7に接続され
ている。そしてカツプ6は外囲器1に取付けられ
た支持リング8により支持されている。 Generally, for example, a fixed anode X-ray tube is constructed as shown in FIG. 1, in which an anode base 2 is disposed on one side of an envelope 1 made of glass and supported by a sealing ring 3 made of metal. In the other side of the envelope 1, a cathode filament 5 is connected to a filament terminal 7 passing through a cup 6, facing the anode 2. The cup 6 is then supported by a support ring 8 attached to the envelope 1.
このようなX線管において、動作時に陰極フイ
ラメント5はフイラメント端子7から加えられた
電流によつて加熱されて電子を放射する。この電
子はカツプ6により集束されながら陽極基体2に
印加される高電圧によつて加速され目的の分布と
エネルギーをもつてターゲツト4に衝突し、ター
ゲツト4からX線を発生する。 In such an X-ray tube, during operation, the cathode filament 5 is heated by a current applied from the filament terminal 7 and emits electrons. These electrons are accelerated by the high voltage applied to the anode substrate 2 while being focused by the cup 6, and collide with the target 4 with a desired distribution and energy, so that the target 4 generates X-rays.
通常、ターゲツトは、陰極フイラメント5から
電子衝撃を受けて高温に熱せられるのでタングス
テンのような難溶金属を用い、陽極基体2はター
ゲツト4の熱を逃がすため熱伝導の良い銅を使用
している。また熱をターゲツト4から陽極基体2
に効果的に逃がすにはターゲツト4と陽極基体2
との間の密着を強力にすることが必要である。 Usually, the target is heated to a high temperature by electron bombardment from the cathode filament 5, so a refractory metal such as tungsten is used, and the anode base 2 is made of copper, which has good thermal conductivity, to release the heat of the target 4. . In addition, heat is transferred from the target 4 to the anode substrate 2.
To effectively release the target 4 and the anode base 2
It is necessary to strengthen the close contact between the two.
従来、このような条件を満たすため、陽極基体
2にターゲツト4を取付ける方法として真空鋳込
み法がもつとも多く行なわれている。即ち被加熱
円筒体(図示せず)の中にターゲツト4を固定
し、その中に入れた銅材を高真空下又は低圧還元
雰囲気下で、かつ高温下で溶融しターゲツト4と
基体とを溶融固着する。このようにしてできた陽
極の銅結晶粒は真空下で徐令されるので概して粗
大となりやすい。 Conventionally, in order to satisfy such conditions, vacuum casting has been widely used as a method for attaching the target 4 to the anode substrate 2. That is, the target 4 is fixed in a cylindrical body to be heated (not shown), and the copper material placed therein is melted under high vacuum or low pressure reducing atmosphere at high temperature to melt the target 4 and the base. stick. Since the copper crystal grains of the anode thus formed are gradually aged under vacuum, they generally tend to become coarse.
最近のX線管は大負荷が要望されそれにともな
つて電力負荷は一層増大傾向にある。このような
X線管はターゲツトの温度上昇が非常に激しいこ
とが予想され、そのため例えば第2図に示すよう
に陽極9のターゲツト10の近傍まで銅部材11
に複数個の切削穴12を設け、X線管動作時にそ
の切削穴12に嵌合ノズル(図示せず)を用いて
冷却油を吹きつけるようにしている。油は熱交換
器を経て循環させ強制冷却することによつて冷却
効果をあげている。にもかかわらずこのような高
負荷X線管は、初期使用段階における真空気密の
破壊による短寿命傾向を伴つている。このような
状況下に鑑がみ、発明者の究明の結果、これは陽
極基体の結晶粒界のクラツクによる真空気密の破
壊であることが判明した。前述した如くターゲツ
トの付着強度及び熱伝導良好な高品質陽極の真空
鋳込み法による製造方法は、真空下で徐冷される
ので粗大結晶傾向にある。第2図に示すように樹
枝状の結晶粒界13を形成しており、この結晶粒
界13は大気側の切削穴12から真空側であるタ
ーゲツト10側へ貫通して形成成されてしまう。
高負荷X線管に於て、例えば50mm2程度の焦点面積
に4KW程度の高負荷が断続的にかかるとき、タ
ーゲツト10の表面は瞬間的に1000℃前後、ター
ゲツト10からの銅部材11は700℃前後まで温
度上昇する。従つて高負荷X線管の使用状態にお
けるターゲツト10うら近辺の銅部材11は、
700℃前後の断続熱サイクルを受けることにな
り、この付近に大きな熱応力がかかる。この熱応
力は100〜200時間の使用熱サイクルでターゲツト
裏部分にあるいは粒界13に沿つて再結晶化が顕
著に進行することが観察されるほど強裂なもので
あり、このため機械的にも弱い樹枝状の粒界13
は、使用初期段階でクラツクへと進行し、陽極9
は真空破壊に至る。更に冷却効果をあげるため銅
部材11に切削穴12が設けられている場合には
この粒界13の長さはより短かくて真空破壊を助
長することになる。このように高負荷X線管は、
陽極に断続的な熱応力が加わることにより粒界ク
ラツクを起こし、初期使用段階でリーク不良の短
寿命となる。なお、前述したような陽極の製造方
法による銅部材の結晶粒界部の溶融ガス不純物量
(酸素,窒素その他)は数PPM以下であることが
発明者によつて分析確認されており、不純物介在
による粒界クラツクを誘発しているものではない
ことがわかつた。 Recent X-ray tubes are required to have a large load, and as a result, the power load tends to increase further. In such an X-ray tube, it is expected that the temperature of the target will rise very sharply, so for example, as shown in FIG.
A plurality of cut holes 12 are provided in the tube, and a fitting nozzle (not shown) is used to spray cooling oil into the cut holes 12 during operation of the X-ray tube. The oil is forced to cool by circulating it through a heat exchanger to achieve a cooling effect. Nevertheless, such high-load X-ray tubes tend to have a short lifespan due to failure of the vacuum seal during initial use. In view of these circumstances, the inventor's investigation revealed that this was due to a breakdown of the vacuum seal due to a crack in the crystal grain boundaries of the anode substrate. As mentioned above, the vacuum casting method for producing high quality anodes with good target adhesion strength and heat conduction tends to produce coarse crystals because the anodes are slowly cooled under vacuum. As shown in FIG. 2, dendritic grain boundaries 13 are formed, and these grain boundaries 13 penetrate from the cut hole 12 on the atmosphere side to the target 10 side on the vacuum side.
In a high-load X-ray tube, for example, when a high load of about 4KW is applied intermittently to a focal area of about 50 mm 2 , the surface of the target 10 momentarily reaches a temperature of around 1000°C, and the copper member 11 from the target 10 reaches a temperature of 700°C. The temperature rises to around ℃. Therefore, when the high-load X-ray tube is in use, the copper member 11 near the back of the target 10 is
It will be subjected to intermittent thermal cycles of around 700°C, and large thermal stress will be applied to this area. This thermal stress is so strong that it is observed that recrystallization progresses significantly on the back side of the target or along the grain boundaries 13 after a thermal cycle of 100 to 200 hours. Weak dendritic grain boundaries13
progresses to a crack in the initial stage of use, and the anode 9
leads to vacuum destruction. Furthermore, if the copper member 11 is provided with cut holes 12 to improve the cooling effect, the length of the grain boundaries 13 will be shorter, promoting vacuum breakdown. In this way, the high-load X-ray tube
Intermittent thermal stress applied to the anode causes grain boundary cracks, resulting in leakage defects and a short life in the initial use stage. In addition, the inventor has analyzed and confirmed that the amount of molten gas impurities (oxygen, nitrogen, etc.) at the grain boundaries of the copper member by the above-mentioned anode manufacturing method is less than a few ppm, and there is no possibility that impurities are present. It was found that this was not the cause of grain boundary cracks.
本発明は上述のような状況に鑑がみなされたも
ので、X線管陽極の鋳込み銅材の結晶構造の改良
を行なわんとするものである。 The present invention was made in consideration of the above-mentioned situation, and aims to improve the crystal structure of a cast copper material for an anode of an X-ray tube.
即ち断続熱サイクルの強力な熱応力によつて陽
極クラツクを起こし、真空気密破壊をもたらす結
晶粒界が生成されない陽極、更に具体的には、少
なくともターゲツト部材を包囲する部分が実質的
に単結晶の銅材で構成された特に高負荷用に適す
るX線管の高品質、長寿命が望める陽極及びその
製造方法を提供するものである。 That is, an anode in which crystal grain boundaries that cause anode cracking and vacuum-tight failure due to the strong thermal stress of intermittent thermal cycles are not generated, and more specifically, an anode in which at least the portion surrounding the target member is substantially monocrystalline. The present invention provides an anode made of a copper material that is particularly suitable for high-load use and can be expected to have high quality and a long life, and a method for manufacturing the same.
以下、本発明に係るX線管陽極およびその製造
方法について説明する。第3図は、本目的に使用
する装置を示し、第4図は真空容器14部の横断
面図、第5図は真空容器14部の縦断面の部分図
を示す。本装置は、石英ベルジヤーの加熱用真空
容器14がその開口端部をパツキング15を介し
てフランジ16上に載置されている。またフラン
ジ16は排気導管17とバルブ18とを介して油
回転ポンプ19に接続されている。真空容器14
内にはフランジ16に載置された中空円筒の素焼
台20を介して、グラフアイトなど難溶性金属か
らなる複数個の鋳込み容器すなわち被加熱円筒体
21がサークル状に設置される。なお符号21a
は円筒体21の底部で、同じグラフアイトで一体
に固着されている。前記素焼台20の上面にはガ
ス導入孔22があけてあり、又側面には数個の排
気孔(図示せず)が開けてある。又排気導管17
の底部を貫通し、排気導管17内を通つて一端を
中空素焼台20内に突出開口した水素導入ノズル
23を備え、他端を微少リークバルブ24を介し
て高純度水素ガス供給源25に接続した小導管2
6が設けてある。鋳込み溶融は例えば高周波誘導
加熱コイル27によつて行なわれる。 Hereinafter, an X-ray tube anode and a method for manufacturing the same according to the present invention will be explained. FIG. 3 shows the apparatus used for this purpose, FIG. 4 is a cross-sectional view of 14 parts of the vacuum container, and FIG. 5 is a partial longitudinal sectional view of 14 parts of the vacuum container. In this device, a heating vacuum container 14 made of a quartz bell jar is placed on a flange 16 with its open end interposed through a packing 15. The flange 16 is also connected to an oil rotary pump 19 via an exhaust conduit 17 and a valve 18. Vacuum container 14
Inside, a plurality of casting vessels or heated cylindrical bodies 21 made of a refractory metal such as graphite are installed in a circular shape via a hollow cylindrical bisque baking stand 20 placed on a flange 16 . Note that the code 21a
is the bottom of the cylindrical body 21 and is fixed together with the same graphite. A gas introduction hole 22 is provided on the top surface of the bisque baking table 20, and several exhaust holes (not shown) are provided on the side surface. Also exhaust pipe 17
A hydrogen introduction nozzle 23 is provided, which penetrates the bottom of the tank, passes through the exhaust conduit 17, and has one end protruding into the hollow clay baking table 20, and the other end is connected to a high-purity hydrogen gas supply source 25 via a minute leak valve 24. small conduit 2
6 is provided. Casting and melting is performed, for example, by a high frequency induction heating coil 27.
第5図に示す如く前記被加熱円筒体21内に
は、タングステンのような所定材料のターゲツト
部材28及び銅部材29が設置される。又この被
加熱円筒体21を真空容器14内に第4図の如く
サークル状に設置する。この被加熱円筒体21す
なわち鋳込容器は、その内部空間の一部に凹みを
有するもので、この実施例では底部をテーパー状
に形成してそのテーパエツジ部30をもつて凹み
にしている。このテーパはX線管陽極ターゲツト
面のテーパ角度にほゞ対応して形成している。そ
して、この凹みを真空容器14および素焼台20
の中心に対して放射方向すなわち外側にすべて向
けて設置する。つまり、仕上り鋳込み陽極のテー
パエツジ部(第2図の11a)に相当するテーパ
エツジ部分30を、円筒の外向き方向にそろえ
る。 As shown in FIG. 5, a target member 28 made of a predetermined material such as tungsten and a copper member 29 are installed inside the heated cylindrical body 21. Further, the cylindrical body 21 to be heated is placed in the vacuum container 14 in a circular shape as shown in FIG. This cylindrical body 21 to be heated, that is, the casting container, has a recess in a part of its internal space, and in this embodiment, the bottom is tapered and the tapered edge portion 30 forms the recess. This taper is formed to approximately correspond to the taper angle of the X-ray tube anode target surface. Then, the vacuum container 14 and the bisque baking table 20
Install them all in a radial direction, that is, facing outward, with respect to the center of the That is, the tapered edge portion 30 corresponding to the tapered edge portion (11a in FIG. 2) of the finished cast anode is aligned in the outward direction of the cylinder.
以上の装置を用いてX線管陽極基体の単結晶を
得る。その要点は次の通りである。第1に高純度
水素ガスによる鋳込み部材の還元純化である。 A single crystal of an X-ray tube anode substrate is obtained using the above apparatus. The main points are as follows. The first is reduction purification of the cast member using high-purity hydrogen gas.
第2は、過冷却をなくし、核発生をおさえて結
晶成長を促進するように溶融銅材の固化晶出温度
(1083℃)の前後を非常に低速度で徐冷する。更
に第3は、X線管陽極固有の形状を利用し、仕上
り鋳込み陽極のテーパエツジ部をつくる部分に相
当する鋳込み容器の内部空間テーパエツジ部30
を真空容器の円筒の外向き方向にそろえることに
よつて固化晶出にあたつて、このテーパエツジ部
30から、核発生、結晶成長するようにし、あた
かもこの部分に種結晶を入れて核としその上に銅
液体を凝固させる如き条件をつくり出すことであ
る。 Second, in order to eliminate supercooling, suppress nucleation, and promote crystal growth, the molten copper material is gradually cooled at a very low rate before and after the solidification crystallization temperature (1083°C). Furthermore, the third feature is to utilize the unique shape of the X-ray tube anode to create a tapered edge portion 30 in the internal space of the casting container, which corresponds to the portion that forms the tapered edge portion of the finished casting anode.
During solidification and crystallization, nucleation and crystal growth occur from this tapered edge portion 30 by arranging it in the outward direction of the cylinder of the vacuum container, as if a seed crystal were placed in this portion and used as a nucleus. The objective is to create conditions that cause the copper liquid to solidify on top of the copper liquid.
次に本発明に係るX線管固定陽極の製造方法の
一実施例を説明する。 Next, an embodiment of the method for manufacturing an X-ray tube fixed anode according to the present invention will be described.
(イ) 第3図〜第5図に示す如く、ターゲツト部材
と銅部材とを内部に収容した被加熱円筒体21
を設置した状態に於て、油回転ポンプ19を作
動させてバルブ18を開き真空容器14内を
10-1〜10-2トール(Torr)に排気する。(b) As shown in FIGS. 3 to 5, a heated cylindrical body 21 housing a target member and a copper member inside.
is installed, operate the oil rotary pump 19 and open the valve 18 to drain the inside of the vacuum container
Exhaust to 10 -1 to 10 -2 Torr.
(ロ) 次に油回転ポンプ19を作動のまゝ、微少リ
ークバルブ24を開き、水素を導入し真空容器
14内を8〜10Torrに調整する。かくして水
素ガスは真空容器14内の不純ガスを置換洗浄
し、油回転ポンプ19によつて排出されるよう
な循環経路がつくられる。(b) Next, while keeping the oil rotary pump 19 in operation, open the minute leak valve 24, introduce hydrogen, and adjust the inside of the vacuum vessel 14 to 8 to 10 Torr. In this way, a circulation path is created in which the hydrogen gas displaces and cleans the impure gas in the vacuum container 14 and is discharged by the oil rotary pump 19.
(ハ) 次に第6図に示す温度上昇ステツプに従つて
真空容器14の外部に設置した高周波誘導加熱
コイル27によつて被加熱円筒体21を加熱す
る。(c) Next, the cylindrical body 21 to be heated is heated by the high frequency induction heating coil 27 installed outside the vacuum vessel 14 according to the temperature raising step shown in FIG.
第6図に示す溶融、徐冷工程は、図中に示す
ように大別して3つの領域に区分できる。 The melting and slow cooling steps shown in FIG. 6 can be roughly divided into three regions as shown in the figure.
領域Aは、予備脱ガス工程であり、800〜900
℃に保持し、被加熱円筒体21及びその他部材
を還元清浄化をはかる。特にタングステンター
ゲツト部材及び銅部材の表面の不純物を除去で
きるように充分時間をとる必要がある。これに
よつて領域Cでの固化晶出時の核の形成速度を
助長しやすい不純物の種発生を抑制することが
できる。 Area A is the preliminary degassing step, which is 800 to 900
The heating cylinder 21 and other members are maintained at a temperature of 0.degree. C. and cleaned by reduction. In particular, it is necessary to allow sufficient time to remove impurities from the surfaces of the tungsten target member and copper member. This makes it possible to suppress the generation of impurity seeds that tend to accelerate the formation rate of nuclei during solidification and crystallization in region C.
領域Bでは、部材その他が清浄になつたとこ
ろで加熱温度を1200〜1300℃の銅溶融鋳込み温
度に温度上昇させる。この工程では陽極材料か
ら、激しくガス放出が起こるが、5〜10分水素
ガス導入を保持し、溶融した銅中の酸素を溶解
した水素ガスによつて積極的に水として除去で
きる。この後水素導入を止めると、陽極材料に
溶解していた水素は速やかに排出される。水素
を排出した状態は約10-2Torr以下の真空圧に
する。 In region B, when the members and others are clean, the heating temperature is increased to a copper melting casting temperature of 1200 to 1300°C. In this process, intense gas release occurs from the anode material, but by keeping the hydrogen gas introduced for 5 to 10 minutes, the oxygen in the molten copper can be actively removed as water by the dissolved hydrogen gas. After this, when the introduction of hydrogen is stopped, the hydrogen dissolved in the anode material is quickly discharged. When hydrogen is discharged, the vacuum pressure should be approximately 10 -2 Torr or less.
次に領域Cは、単結晶化にあつてもつとも重
要な工程である。即ち銅の固化晶出温度(1083
℃)前後の温度領域を5℃/分以下の下降温度
速度で徐冷する。この工程ではとくに過冷却を
なくし、核発生速度をほゞ零とし、結晶成長を
促進させる。徐冷速度は高周波出力を徐々に下
げることによつて実現出来る。 Next, region C is an extremely important step in single crystallization. In other words, the solidification and crystallization temperature of copper (1083
℃) is gradually cooled at a temperature decreasing rate of 5℃/min or less. This process specifically eliminates supercooling, reduces the nucleation rate to almost zero, and promotes crystal growth. The slow cooling rate can be achieved by gradually lowering the high frequency output.
さて、X線管陽極固有の形状を利用した仕上
り鋳込み陽極のテーパエツヂ部に相当する部分
30を円周の外向き方向にそろえることによつ
てこの徐冷工程において円筒状真空容器および
誘導加熱により温度を下げるので中央部にくら
べて周辺の方がわずかではあるが早く温度降下
し、しかもテーパエツヂ部が熱容量としても他
の部分より小さいため最も早く温度降下しここ
に核の発生場所を限定することができる。この
ため固化晶出がこの部分からはじまり、ターゲ
ツト部材のまわりに及び、さらに陽極全体に進
行して単結晶構造が確実に得られる。本発明者
は、陽極基体の直径が38mm、長さ100mm、タン
グステンターゲツト部材の直径が25mm、その厚
さが2mm、テーパ角度(中心軸に対する角度)
が約70℃の陽極体を、単結晶で成形することに
成功した。テーパ角度は約80℃以下であれば、
充分再現性よく得ることができた。 Now, by aligning the part 30 corresponding to the tapered edge part of the finished cast anode using the unique shape of the X-ray tube anode in the outward direction of the circumference, the temperature can be lowered by using a cylindrical vacuum vessel and induction heating in this slow cooling process. Because the temperature is lowered, the temperature at the periphery drops faster than at the center, albeit slightly.Moreover, since the taper edge has a smaller heat capacity than other parts, the temperature drops the fastest, and it is possible to limit the location of nuclei generation here. can. Therefore, solidification crystallization starts from this portion, extends around the target member, and further progresses to the entire anode, ensuring that a single crystal structure is obtained. The inventor has determined that the diameter of the anode substrate is 38 mm, the length is 100 mm, the diameter of the tungsten target member is 25 mm, the thickness is 2 mm, and the taper angle (angle with respect to the central axis).
succeeded in molding a single-crystal anode body at approximately 70°C. If the taper angle is approximately 80℃ or less,
This could be obtained with sufficient reproducibility.
(ニ) 固化晶出後は、約900℃以下の領域Dで窒素
ガスによる急冷をおこなう。これによつて工程
の短縮もはかることができ、冷却後、真空容器
14から取出し、被加熱円筒体21から鋳込み
陽極を抜きとり所望の陽極形状に仕上加工す
る。(d) After solidification and crystallization, rapid cooling is performed using nitrogen gas in region D below approximately 900°C. This can also shorten the process, and after cooling, the anode is taken out from the vacuum vessel 14, the cast anode is extracted from the heated cylindrical body 21, and finished into the desired anode shape.
上述の水素導入圧力は陽極材料への酸化性ガス
のとび込み防止及び還元雰囲気の作成のためには
少なく数Torrは必要である。又油回転ポンプの
安全動作、水素の消費量及び溶融している銅材へ
の不純ガスによる巣の発生防止等を考慮すれば、
上限水素圧力は、数10Torrにとどめるのが好ま
しい。 The above-mentioned hydrogen introduction pressure needs to be at least several Torr in order to prevent oxidizing gas from penetrating into the anode material and to create a reducing atmosphere. Also, considering the safe operation of the oil rotary pump, hydrogen consumption, and prevention of cavities caused by impure gas in the molten copper material,
The upper limit hydrogen pressure is preferably kept at several tens of Torr.
又上述の徐冷速度は、ゆるやかであるほど良好
であるが、工業的見地すなわち大量生産の見地か
らは5℃/分以下が単結晶化の上限である。 The slower the slow cooling rate, the better; however, from an industrial standpoint, ie, from the standpoint of mass production, the upper limit for single crystallization is 5° C./min or less.
第7図乃至第9図に示す実施例は、銅素材を収
容するための鋳込容器21として、内側底部の隅
に1つの穴状の凹み30を形成したものを用いる
場合である。すなわちこの容器21は平坦な底に
凹み30を形成しこの凹み30を加熱真空容器1
4内に装着したときすべて外方向に向けて配置す
る。これを用いた場合も前述の実施例のテーパエ
ツジ部に本実施例の凹みが対応し、溶融銅材は容
器の凹み部分から晶出しはじめ全体に進行しはじ
め全体に進行して単結晶が得られる。 The embodiment shown in FIGS. 7 to 9 is a case in which a casting container 21 for accommodating a copper material has one hole-shaped recess 30 formed at the corner of the inner bottom. That is, this container 21 has a recess 30 formed in its flat bottom, and this recess 30 is heated to the vacuum container 1.
4. When installed inside, all are placed facing outward. Even when this is used, the concavity of this example corresponds to the tapered edge part of the above-mentioned example, and the molten copper material begins to crystallize from the concave part of the container and progresses throughout the container to obtain a single crystal. .
このように容器の内部空間の底部の一部にテー
パエツヂ部あるいは第7図乃至第9図のような穴
状の凹みを形成したものを用い、しかもこれを加
熱真空容器の外側すなわち温度降下の際に最も温
度分布の低くなるところに向けて位置させ、徐冷
することにより、再現性よく銅の単結晶体を得る
ことができる。なお本発明はターゲツト部材のま
わりすなわち陽極基体のターゲツト面の近傍を実
質的に単結晶構造とすればよく。陽極体の全体が
単結晶でなければならないというものではない。 In this way, a tapered edge part or a hole-shaped recess as shown in Figs. A single crystal of copper can be obtained with good reproducibility by positioning it toward the point where the temperature distribution is lowest and slowly cooling it. In the present invention, the area around the target member, that is, the vicinity of the target surface of the anode substrate may have a substantially single-crystal structure. It is not necessary that the entire anode body be made of single crystal.
このようにして出来た銅の単結晶のX線管固定
陽極は、化学エツヂング,X線回折,ラウエ写真
像のいずれにおいても単結晶構造を立証出来た。 The single-crystal copper anode fixed to the X-ray tube produced in this way was able to prove its single-crystal structure in chemical etching, X-ray diffraction, and Laue photographic images.
銅の単結晶による陽極基体は、面心立方格子構
造あり、3方軸に対して対称であるので、熱伝
導,熱膨張係数に於て異方性はなく、X線管陽極
としては、多結晶体よりもすぐれた熱伝導特性を
もち、かつ、従来おきていたX線管陽極の熱応力
による結晶粒界クラツクを完全に解決することが
でき、またターゲツト部材との密着性も実用上充
分で、高品質,長寿命の高負荷X線管用陽極を再
現性よく実現できる。 The anode substrate made of single crystal copper has a face-centered cubic lattice structure and is symmetrical about three axes, so there is no anisotropy in heat conduction and thermal expansion coefficient, and it is suitable for use as an X-ray tube anode. It has better thermal conductivity than crystalline materials, can completely solve the grain boundary cracks caused by thermal stress in X-ray tube anodes, and has sufficient adhesion to target materials for practical use. This makes it possible to realize high-quality, long-life, high-load X-ray tube anodes with good reproducibility.
第1図はX線管を示す概略図、第2図は従来の
陽極の部分断面図、第3図は本発明に使用する装
置、第4図は真空容器部の横断面図、第5図は真
空容器部の縦断面の部分図、第6図は本発明の工
程の温度上昇・下降ステツプを示す工程図、第7
図は他の実施例を示す要部縦断面図、第8図は第
7図の8―8における横断面図、第9図は第2図
に対応する概略断面図である。
2……陽極、4……ターゲツト、14……加熱
真空容器、21……被加熱円筒体(鋳込み容
器)、23……水素導入ノズル、28……ターゲ
ツト部材、29……銅部材、11a……基体のテ
ーパエツヂ部、30……鋳込み容器内の凹部。
Fig. 1 is a schematic diagram showing an X-ray tube, Fig. 2 is a partial cross-sectional view of a conventional anode, Fig. 3 is a device used in the present invention, Fig. 4 is a cross-sectional view of a vacuum vessel section, and Fig. 5 6 is a partial longitudinal cross-sectional view of the vacuum container part, FIG. 6 is a process diagram showing the temperature rise and fall steps of the process of the present invention, and FIG.
The drawings are longitudinal cross-sectional views of essential parts showing another embodiment, FIG. 8 is a cross-sectional view taken along line 8--8 in FIG. 7, and FIG. 9 is a schematic cross-sectional view corresponding to FIG. 2. 2...Anode, 4...Target, 14...Heating vacuum vessel, 21...Heated cylindrical body (casting container), 23...Hydrogen introduction nozzle, 28...Target member, 29...Copper member, 11a... ...Tapered edge part of the base body, 30... Recessed part in the casting container.
Claims (1)
んだX線管陽極において、上記ターゲツト部材を
包囲する陽極基体部分が実質的に単結晶構造の銅
材で構成されてなることを特徴とするX線管陽
極。 2 ターゲツト部材を銅からなる陽極基体に鋳込
むX線管陽極の製造方法において、減圧還元ガス
雰囲気のもとで銅材を加熱溶融する工程と、その
後に溶融銅材を固化晶出する温度領域で5℃/分
以下の下降温度速度で徐冷する工程とをもつこと
を特徴とするX線管陽極の製造方法。 3 銅材を収容する鋳込み容器として、内部空間
の一部に凹みを有する容器を用いる特許請求の範
囲第2項記載の製造方法。 4 凹みは容器の底部をテーパ状に成形したテー
パエツジからなる特許請求の範囲第3項記載の製
造方法。 5 内部空間の一部に凹みを有する鋳込容器を、
複数個真空加熱容器内にサークル状に配置し、こ
の各鋳込容器内にターゲツト部材および銅材を収
容させ、各鋳込容器はそれぞれの凹みを加熱容器
の外側方向に向けて配置して鋳込むことを特徴と
する特許請求の範囲第2項記載の製造方法。[Scope of Claims] 1. In an X-ray tube anode in which a target member is cast into an anode base made of copper, the anode base portion surrounding the target member is substantially made of a copper material having a single crystal structure. An X-ray tube anode featuring: 2. In a method for manufacturing an X-ray tube anode in which a target member is cast into an anode base made of copper, there is a step of heating and melting the copper material in a reduced pressure reducing gas atmosphere, and then a temperature range in which the molten copper material is solidified and crystallized. A method for producing an anode for an X-ray tube, comprising the step of slowly cooling the anode at a temperature decreasing rate of 5° C./min or less. 3. The manufacturing method according to claim 2, in which a container having a recess in a part of the internal space is used as the casting container for accommodating the copper material. 4. The manufacturing method according to claim 3, wherein the recess is a tapered edge formed by shaping the bottom of the container into a tapered shape. 5 A casting container with a dent in a part of the internal space,
A plurality of cast members are placed in a circle in a vacuum heating container, a target member and a copper material are housed in each casting container, and each casting container is placed with its recess facing toward the outside of the heating container. The manufacturing method according to claim 2, characterized in that:
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1476380A JPS56112056A (en) | 1980-02-12 | 1980-02-12 | X-ray tube anode and its manufacture |
| US06/233,432 US4400824A (en) | 1980-02-12 | 1981-02-11 | X-Ray tube with single crystalline copper target member |
| EP81100997A EP0034768B1 (en) | 1980-02-12 | 1981-02-12 | Method for manufacturing an anode of an x-ray tube |
| DE8181100997T DE3167133D1 (en) | 1980-02-12 | 1981-02-12 | Method for manufacturing an anode of an x-ray tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1476380A JPS56112056A (en) | 1980-02-12 | 1980-02-12 | X-ray tube anode and its manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56112056A JPS56112056A (en) | 1981-09-04 |
| JPS6131589B2 true JPS6131589B2 (en) | 1986-07-21 |
Family
ID=11870107
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1476380A Granted JPS56112056A (en) | 1980-02-12 | 1980-02-12 | X-ray tube anode and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56112056A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110303141A (en) * | 2019-07-10 | 2019-10-08 | 株洲未铼新材料科技有限公司 | A kind of effective single crystal Cu fixed anode target of X-ray and preparation method thereof |
-
1980
- 1980-02-12 JP JP1476380A patent/JPS56112056A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56112056A (en) | 1981-09-04 |
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