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JPS6131626B2 - - Google Patents
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JPS6131626B2 - - Google Patents

Info

Publication number
JPS6131626B2
JPS6131626B2 JP52146271A JP14627177A JPS6131626B2 JP S6131626 B2 JPS6131626 B2 JP S6131626B2 JP 52146271 A JP52146271 A JP 52146271A JP 14627177 A JP14627177 A JP 14627177A JP S6131626 B2 JPS6131626 B2 JP S6131626B2
Authority
JP
Japan
Prior art keywords
semiconductor device
resin
view
sectional
magazine case
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52146271A
Other languages
Japanese (ja)
Other versions
JPS5478663A (en
Inventor
Hiroshi Koshimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP14627177A priority Critical patent/JPS5478663A/en
Publication of JPS5478663A publication Critical patent/JPS5478663A/en
Publication of JPS6131626B2 publication Critical patent/JPS6131626B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Lead Frames For Integrated Circuits (AREA)

Description

【発明の詳細な説明】 本発明は、樹脂封止型半導体装置における外部
リードの形状に関し、特にMOS型半導体装置に
おける静電破壊を防止する外部リードの形状に関
するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to the shape of an external lead in a resin-sealed semiconductor device, and particularly to the shape of an external lead that prevents electrostatic damage in a MOS semiconductor device.

樹脂封止型半導体装置では、樹脂と他の物質と
の摩擦による静電気の発生は重要な問題であり、
特にMOS型半導体装置では、静電気によりゲー
トシヨートを起し不良となる。
In resin-sealed semiconductor devices, the generation of static electricity due to friction between the resin and other substances is an important problem.
Particularly in MOS type semiconductor devices, static electricity causes gate shorting, resulting in defects.

これを防ぐため、導電性スポンジやアルミフオ
イル等に半導体装置の外部リードを接触させてお
く事が一般に行なわれている。
To prevent this, it is common practice to keep the external leads of the semiconductor device in contact with a conductive sponge, aluminum foil, or the like.

また、半導体装置の運搬、保管などの際には、
第1図の断面図に示すような筒状のマガジンケー
ス3が用いられているが、この筒状のマガジンケ
ース3の材質は、通常アルミニウム又は導電性プ
ラスチツクで作られ、静電気の発生を押える様に
している。
In addition, when transporting or storing semiconductor devices,
A cylindrical magazine case 3 as shown in the cross-sectional view of Fig. 1 is used, and the material of this cylindrical magazine case 3 is usually made of aluminum or conductive plastic, and is designed to suppress the generation of static electricity. I have to.

しかしながら、外部リード1とマガジンケース
3とは、第2図の断面図に示すように常に接触し
ているわけではなく、一方封止樹脂2の上面又は
下面がマガジンケースと絶えず接触する構造にな
つている。これは外部リードの保護のため必要不
可決な構造であり、このため樹脂中に静電気が発
生し、特にゲート酸化膜の薄いMOS型半導体装
置のゲートシヨートが起る事がある。
However, the external lead 1 and the magazine case 3 are not always in contact with each other, as shown in the cross-sectional view of FIG. ing. This is an unnecessary structure for protecting the external leads, and as a result, static electricity is generated in the resin, which can lead to gate shorting, especially in MOS type semiconductor devices with thin gate oxide films.

本発明は、この欠点を除くためになされたもの
で、外部リードとマガジンケースとを常に接触さ
せる事により、静電破壊の起らないように外部リ
ードの形状を改良した樹脂封止型半導体装置を提
供するものである。
The present invention has been made to eliminate this drawback, and is a resin-sealed semiconductor device in which the shape of the external lead is improved so that the external lead and the magazine case are always in contact to prevent electrostatic damage. It provides:

以下図面を基に、本発明を説明する。第3図
は、本発明の第1の実施例を示す樹脂封止型半導
体装置の断面図で、外部リード1′は、その中間
部を屈曲させ、封止樹脂部2の下面に張り出して
いる。第4図は、本発明の半導体装置をマガジン
ケースに入れた状態を示した断面図で、封止樹脂
2の下面に張り出した外部リード1はマガジンケ
ース3と接触し、一方外部リード1′の先端はマ
ガジンケース3に接触しないため外部リードの曲
り等の発生はなく、もちろん静電破壊は皆無であ
る。第5図は、本発明の第2の実施例を示す断面
図で、外部リード1′は封止樹脂部2の上面に張
り出している。第6図は、本発明の第3の実施例
を示す斜視図で、外部リード1′の一部を上方に
引き起こすようにして屈曲させ封止樹脂部2の上
面に張り出させたものである。この第2、第3の
実施例の構造では、半導体装置の実装後各端子の
特性チエツクが容易になる利点もある。
The present invention will be explained below based on the drawings. FIG. 3 is a cross-sectional view of a resin-sealed semiconductor device according to a first embodiment of the present invention, in which an external lead 1' has its intermediate portion bent and protrudes from the lower surface of the encapsulating resin portion 2. . FIG. 4 is a cross-sectional view showing the semiconductor device of the present invention placed in a magazine case. The external leads 1 protruding from the bottom surface of the sealing resin 2 are in contact with the magazine case 3, while the external leads 1' are in contact with the magazine case 3. Since the tip does not come into contact with the magazine case 3, there is no bending of the external lead, and of course there is no electrostatic damage. FIG. 5 is a sectional view showing a second embodiment of the present invention, in which an external lead 1' protrudes from the upper surface of the sealing resin portion 2. As shown in FIG. FIG. 6 is a perspective view showing a third embodiment of the present invention, in which a part of the external lead 1' is bent upward so as to protrude above the upper surface of the sealing resin part 2. . The structures of the second and third embodiments also have the advantage that it is easy to check the characteristics of each terminal after mounting the semiconductor device.

以上述べてきたような各実施例におけるリード
〓〓〓〓
の成形は、曲げ金型を用いて容易に行うことがで
きるので、本発明は樹脂封止型半導体装置におけ
る静電気の発生を防止する上で大なる効果があ
る。
Leads in each of the examples described above〓〓〓〓
Since the molding can be easily performed using a bending mold, the present invention is highly effective in preventing the generation of static electricity in resin-sealed semiconductor devices.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、マガジンケースの断面図、第2図
は、従来の半導体装置をマガジンケースに入れた
状態を示す断面図、第3図は、本発明半導体装置
の第1の実施例を示す断面図、第4図は、第3図
に示す半導体装置をマガジンケースに入れた状態
を示す断面図、第5図は、本発明半導体装置の第
2の実施例を示す断面図、第6図は、本発明半導
体装置の第3の実施例を示す斜視図である。 1,1′……外部リード、2……封止樹脂、3
……マガジンケース。 〓〓〓〓
FIG. 1 is a sectional view of a magazine case, FIG. 2 is a sectional view showing a conventional semiconductor device placed in the magazine case, and FIG. 3 is a sectional view showing a first embodiment of the semiconductor device of the present invention. 4 is a sectional view showing the semiconductor device shown in FIG. 3 placed in a magazine case, FIG. 5 is a sectional view showing a second embodiment of the semiconductor device of the present invention, and FIG. 6 is a sectional view showing the semiconductor device shown in FIG. , is a perspective view showing a third embodiment of the semiconductor device of the present invention. 1, 1'...External lead, 2...Sealing resin, 3
...Magazine case. 〓〓〓〓

Claims (1)

【特許請求の範囲】[Claims] 1 樹脂封止部の側面から導出した外部リードの
一部を樹脂の表面もしくは底面に沿つて屈曲せし
め装置をケースに入れた時に前記屈曲部がケース
と接触する構造となしたことを特徴とする樹脂封
止型半導体装置。
1. A part of the external lead led out from the side surface of the resin sealing part is bent along the surface or bottom surface of the resin, so that when the device is inserted into the case, the bent part comes into contact with the case. Resin-sealed semiconductor device.
JP14627177A 1977-12-05 1977-12-05 Resin-sealed semiconductor device Granted JPS5478663A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14627177A JPS5478663A (en) 1977-12-05 1977-12-05 Resin-sealed semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14627177A JPS5478663A (en) 1977-12-05 1977-12-05 Resin-sealed semiconductor device

Publications (2)

Publication Number Publication Date
JPS5478663A JPS5478663A (en) 1979-06-22
JPS6131626B2 true JPS6131626B2 (en) 1986-07-21

Family

ID=15403953

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14627177A Granted JPS5478663A (en) 1977-12-05 1977-12-05 Resin-sealed semiconductor device

Country Status (1)

Country Link
JP (1) JPS5478663A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6446134U (en) * 1987-09-18 1989-03-22

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6022332A (en) * 1983-07-18 1985-02-04 Mitsubishi Electric Corp Testing of semiconductor device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49147965U (en) * 1973-04-19 1974-12-20

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6446134U (en) * 1987-09-18 1989-03-22

Also Published As

Publication number Publication date
JPS5478663A (en) 1979-06-22

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