JPS6133512B2 - - Google Patents
Info
- Publication number
- JPS6133512B2 JPS6133512B2 JP10549481A JP10549481A JPS6133512B2 JP S6133512 B2 JPS6133512 B2 JP S6133512B2 JP 10549481 A JP10549481 A JP 10549481A JP 10549481 A JP10549481 A JP 10549481A JP S6133512 B2 JPS6133512 B2 JP S6133512B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode
- piezoelectric film
- transducer
- surface side
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010408 film Substances 0.000 description 57
- 229910052751 metal Inorganic materials 0.000 description 18
- 239000002184 metal Substances 0.000 description 18
- 229920000642 polymer Polymers 0.000 description 17
- 239000000463 material Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- -1 Polyphenylene Polymers 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000003745 diagnosis Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000004760 aramid Substances 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003055 poly(ester-imide) Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G10—MUSICAL INSTRUMENTS; ACOUSTICS
- G10K—SOUND-PRODUCING DEVICES; METHODS OR DEVICES FOR PROTECTING AGAINST, OR FOR DAMPING, NOISE OR OTHER ACOUSTIC WAVES IN GENERAL; ACOUSTICS NOT OTHERWISE PROVIDED FOR
- G10K11/00—Methods or devices for transmitting, conducting or directing sound in general; Methods or devices for protecting against, or for damping, noise or other acoustic waves in general
- G10K11/002—Devices for damping, suppressing, obstructing or conducting sound in acoustic devices
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Acoustics & Sound (AREA)
- Multimedia (AREA)
- Transducers For Ultrasonic Waves (AREA)
Description
【発明の詳細な説明】
本発明は、耐水性、耐摩耗性に富み、かつ、電
気的にも安定な構造を有する超音波トランスデユ
ーサに関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an ultrasonic transducer that is highly water resistant, wear resistant, and has an electrically stable structure.
無機圧電材料、あるいは、ポーリングにより圧
電性を有するようになる、いわゆる高分子圧電体
は、超音波の送信・受信に有効に動作するので、
超音波トランスデユーサとして用いられている。 Inorganic piezoelectric materials or so-called polymer piezoelectric materials that become piezoelectric through poling can effectively transmit and receive ultrasonic waves.
Used as an ultrasonic transducer.
とくに高分子圧電膜は音響インピーダンスが低
く、可撓性を有し、加工性に富むことなど、無機
圧電材料に比して種々の利点を有するため超音波
探傷、超音波診断、音響光学等々の分野に用いら
れるトランスデユーサとしてきわめて有用であ
る。 In particular, polymer piezoelectric films have various advantages over inorganic piezoelectric materials, such as low acoustic impedance, flexibility, and high workability, so they are useful for ultrasonic flaw detection, ultrasonic diagnosis, acousto-optic, etc. It is extremely useful as a transducer used in the field.
高分子圧電膜をかかるトランスデユーサとして
動作させるためには圧電膜の両面に直接、または
中間層を介して電極が必要である。この電極は、
金属板や金属箔などを接着するか、あるいは、金
属薄膜を蒸着、スパツタ、メツキ等の方法で圧電
膜に付着せしめるか、あるいは導電性塗料を塗布
することによつて形成される。 In order to operate a polymeric piezoelectric film as such a transducer, electrodes are required on both sides of the piezoelectric film, either directly or via an intermediate layer. This electrode is
It is formed by adhering a metal plate or metal foil, or by attaching a metal thin film to the piezoelectric film by a method such as vapor deposition, sputtering, or plating, or by applying a conductive paint.
第1図は、高分子圧電膜を用いた従来の超音波
トランスデユーサの基本構造の一例である。 FIG. 1 shows an example of the basic structure of a conventional ultrasonic transducer using a polymer piezoelectric film.
第1図Aは金属のブロツク2に高分子圧電膜3
が接着され、圧電膜の上に動作面側電極4が形成
されている。金属ブロツク2は、1/4λで圧電膜
を動作させる作用をすると同時に、背面電極とし
て用いられている。第1図Bは高分子圧電膜3の
背面側電極として設けた金属膜2′が、動作面側
電極4との間で圧電膜3がをサンドイツチ状に構
成し、これが支持基板(吸音体)1の上に接着さ
れている。動作面側電極4はAl、Ni、Au、Ag等
を通常、蒸着、スパツタ、メツキなどの方法を用
いてあらかじめ高分子圧電膜3の上に設けておく
か、あるいは圧電膜3を支持基板1または2の上
に接着した後、上記と同後の手段で設けられる。
電源との接続はリード線を導電ペーストで電極4
と接続することにより行なう。 Figure 1A shows a polymer piezoelectric film 3 on a metal block 2.
is adhered to the piezoelectric film, and an electrode 4 on the operating surface side is formed on the piezoelectric film. The metal block 2 functions to operate the piezoelectric film at 1/4λ and is also used as a back electrode. In FIG. 1B, the metal film 2' provided as the electrode on the back side of the polymer piezoelectric film 3 forms a sandwich-like structure between the metal film 2' and the electrode 4 on the active surface side, and this serves as a support substrate (sound absorber). It is glued on top of 1. The active surface side electrode 4 is usually provided on the polymer piezoelectric film 3 using a method such as vapor deposition, sputtering, plating, etc., or the piezoelectric film 3 is placed on the supporting substrate 1. Or after gluing onto 2, it is provided by the same means as above.
To connect to the power supply, connect the lead wire with electrode 4 using conductive paste.
This is done by connecting to.
しかし、上述した構造のトランスデユーサは、
次の主要な欠点によつて実用には供し得ない。す
なわち、例えば、超音波探傷や超音波診断等に使
用されるトランスデユーサでは、水中で使用され
ることが多いので、動作面側電極4が水や酸素に
よつて劣化すること、力学的摩擦が直接与えられ
て摩耗が進行し易いこと、さらには、動作面側電
極4が形成されている高分子圧電膜は耐熱性がな
いので、電極と電源回路系、あるいは、電極と受
信・増幅回路系との導通をハンダ付でとることは
一般には困難であり、したがつて電極とリード線
との接着力が弱いという欠点を有していた。 However, the transducer with the above structure is
It cannot be put to practical use due to the following major drawbacks. That is, for example, transducers used for ultrasonic flaw detection and ultrasonic diagnosis are often used underwater, so the electrode 4 on the operating surface side may deteriorate due to water or oxygen, and mechanical friction may occur. Furthermore, since the polymer piezoelectric film on which the active surface side electrode 4 is formed has no heat resistance, the electrode and the power supply circuit system, or the electrode and the reception/amplification circuit It is generally difficult to establish electrical continuity with the system by soldering, and therefore, the adhesive strength between the electrode and the lead wire is weak.
本発明者らは、上記欠点を解決するための超音
波トランスデユーサとして、高分子圧電体の共振
周波数の制御のために、電極に接して、ある定め
られた厚さを有する高分子膜を付加することをす
でに特願昭55−15860において開示し、第2図に
示すような実用的な超音波トランスデユーサを例
示した。 The present inventors have developed an ultrasonic transducer to solve the above-mentioned drawbacks by using a polymer film having a certain thickness in contact with an electrode in order to control the resonance frequency of a polymer piezoelectric material. This addition was already disclosed in Japanese Patent Application No. 55-15860, and a practical ultrasonic transducer as shown in FIG. 2 was exemplified.
すなわち、第2図のトランスデユーサは、第1
図に示したトランスデユーサに比べて次の点で改
善されている。 That is, the transducer of FIG.
The transducer shown in the figure is improved in the following points.
(i) 表面付加膜5を設けることによつて、高分子
圧電膜3の表面に蒸着された動作面側電極4が
保護され、水や摩擦に対する耐久性が向上した
こと。(i) By providing the surface additional film 5, the active surface side electrode 4 deposited on the surface of the polymer piezoelectric film 3 is protected, and its durability against water and friction is improved.
(ii) 表面付加膜5を設けることによつて、動作面
側電極4が外部から絶縁されたこと(これは安
全性が強く要求される超音波診断用途には重要
である。)。(ii) By providing the surface additional film 5, the active surface side electrode 4 is insulated from the outside (this is important for ultrasonic diagnostic applications where safety is strongly required).
(iii) 金属ケース6が電極4が蒸着された圧電膜3
を押え、圧電膜の支持基板1からのハク離を防
ぐとともに、電極4と広い面積で接触する(必
要に応じて4と6の間に導電性接着剤、あるい
は柔軟性金属箔(Sn、Inなど)を介存させる
こともできる)ので、安定な電気的接続ができ
る。(iii) The metal case 6 is the piezoelectric film 3 on which the electrode 4 is deposited
to prevent the piezoelectric film from peeling off from the support substrate 1, and to contact the electrode 4 over a wide area (if necessary, use a conductive adhesive or flexible metal foil (Sn, In, etc.) between 4 and 6. ), a stable electrical connection can be achieved.
(iv) 絶縁性のケース7を設けることによつて、外
部との電気絶縁が完全になつたこと。(iv) By providing an insulating case 7, electrical insulation from the outside has been achieved completely.
(v) 適切な補助治具を用いることによつて、支持
基板1、背面電極2、表面に動作面側電極4が
蒸着された高分子圧電膜1、表面付加膜5、金
属ケース6、およびプラスチツクケース7を順
時接着加工でき、トランスデユーサの組立て製
造過程が単純化できる。(v) By using an appropriate auxiliary jig, the supporting substrate 1, the back electrode 2, the polymer piezoelectric film 1 on which the active surface side electrode 4 is vapor-deposited, the surface additional film 5, the metal case 6, and The plastic case 7 can be bonded in sequence, and the process of assembling and manufacturing the transducer can be simplified.
などである。etc.
しかしながら、上記で開示された従来構造の超
音波トランスデユーサの最大の欠点は、高分子圧
電膜3上に動作面側電極4が前以つて設けられて
いるため、限られた高分子圧電膜3、例えばフツ
素系高分子と電極との付着力からみた好ましい組
合せの選択が限定され付着強度が依然として小さ
いことである。このため圧電膜の表面に電極4を
蒸着後、圧電膜3を先浄する場合電極4が剥離し
たり、組立て中、必要に応じて高分子圧電膜3を
適当な曲率で曲げる場合には電極4の剥離が発生
することが多い。 However, the biggest drawback of the conventional ultrasonic transducer disclosed above is that the active surface side electrode 4 is provided on the polymer piezoelectric film 3 in advance, so the limited amount of the polymer piezoelectric film 3 is 3. For example, the selection of preferred combinations of fluorine-based polymers and electrodes from the viewpoint of adhesion strength is limited, and the adhesion strength remains low. Therefore, after depositing the electrode 4 on the surface of the piezoelectric film, if the piezoelectric film 3 is pre-cleaned, the electrode 4 may peel off, or if the polymer piezoelectric film 3 is bent at an appropriate curvature as necessary during assembly, the electrode 4 may peel off. 4 peeling often occurs.
さらには、ポーリング処理過程で高温・高圧条
件が付与されることによつて、予め表面に蒸着さ
れた電極4の破壊が起ること、あるいは、組立て
後、銀ペーストを介した接着部、すなわち、金属
ケースのエツジ部との剥離が発生することなど、
高分子圧電膜3上に予め電極4を設けたために発
生する種々欠点を有していた。 Furthermore, due to the application of high temperature and high pressure conditions during the poling process, the electrodes 4 deposited on the surface in advance may be destroyed, or after assembly, the bonded portion via the silver paste may be damaged. Peeling from the edges of the metal case may occur, etc.
Since the electrode 4 was previously provided on the polymeric piezoelectric film 3, it had various drawbacks.
本発明は、これらの欠点を除くためになされた
ものであつて次のとおり構成される。すなわち、
圧電性の膜または板と、この膜または板の動作面
側電極と、表面付加膜とをこの順序に積層してな
る超音波トランスデユーサにおいて、前記動作面
側電極を前記表面付加膜上にあらかじめ形成せし
め、次いでこれと前記圧電性の膜または板とを接
着せしめてなる超音波トランスデユーサ構造体。 The present invention has been made to eliminate these drawbacks and is constructed as follows. That is,
In an ultrasonic transducer in which a piezoelectric film or plate, an electrode on the active side of this film or plate, and a surface-added film are laminated in this order, the active-side electrode is placed on the surface-added film. An ultrasonic transducer structure which is preformed and then bonded to the piezoelectric membrane or plate.
次に本発明を第3図を用いてより詳しく説明す
る。第3図において、本発明に使用される動作面
側電極4′の表面付加膜5への付着形成方法は、
従来から知られている一般的方法が用いられる。
すなわち、蒸着法、スパツタ法、CVD法、電解
メツキ、化学メツキ法、塗布法、などであり、ま
た電極の種類としては、Al、Cu、Au、Ag、In、
Cr、Co、Ni、Pt、Sn、などの金属あるいはこれ
らの任意の合金、あるいは銀ペーストなどの導電
性塗料であつてもよい。また金属箔であつてもよ
い。 Next, the present invention will be explained in more detail using FIG. In FIG. 3, the method of adhering the active surface side electrode 4' to the surface additional film 5 used in the present invention is as follows.
General methods known in the art are used.
In other words, the methods include vapor deposition, sputtering, CVD, electrolytic plating, chemical plating, coating, etc., and the types of electrodes include Al, Cu, Au, Ag, In,
It may be a metal such as Cr, Co, Ni, Pt, Sn, or any alloy thereof, or a conductive paint such as silver paste. Alternatively, it may be a metal foil.
また表面付加膜5の材料としては、動作面側電
極4′が強固に付着するものであればいずれの材
料も用いられるが、一般にはポリエステル、芳香
族ポリアミド、ポリイミドなどの耐熱性高分子、
ポリフエニレン、ポリエチレン、ポリプロピレ
ン、など目的に応じて選択できる。 Further, as the material for the surface additional film 5, any material can be used as long as the active surface side electrode 4' is firmly attached, but generally heat-resistant polymers such as polyester, aromatic polyamide, polyimide, etc.
Polyphenylene, polyethylene, polypropylene, etc. can be selected depending on the purpose.
本例ではトランスデユーサが一つの素子からで
きている場合について述べたが、多素子からなる
トランスデユーサ(例えばリニアアレイ、アニユ
ラーアレイなど)にも適用できることは勿論であ
る。 In this example, the case where the transducer is made of one element has been described, but it goes without saying that the present invention can also be applied to a transducer made of multiple elements (for example, a linear array, an annular array, etc.).
なお、本発明の構造体によれば、予め表面付加
膜5に形成した導電性薄膜が圧電膜の動作面側電
極として作用するので、場合によつては第3図に
示すとおりポーリング時に圧電膜上に付着した電
極4はなくてもよい。 In addition, according to the structure of the present invention, since the conductive thin film formed in advance on the surface addition film 5 acts as an electrode on the operating surface side of the piezoelectric film, in some cases, the piezoelectric film may be removed during poling as shown in FIG. The electrode 4 attached thereto may be omitted.
表面付加膜の内面に予め動作面側電極4′を設
けた本発明によつて得られる効果は次のとおりで
ある。 The effects obtained by the present invention in which the active surface side electrode 4' is previously provided on the inner surface of the surface-added film are as follows.
(1) 表面付加膜5はその物が限定された圧電膜3
と異なり多くの種類の中から用途に応じた選択
が可能であり、付着強度の強い動作面側電極
4′および表面付加膜5の組合せを任意に選ぶ
ことができる。付着強度が強いということは、
とりもなおさず前述した従来構造のトランスデ
ユーサにおいて、とくに組立て時において発生
していた電極の剥離が本発明においては発生し
ないことを意味し、事実電極4′の剥離がない
ので取扱いが容易となり、トランスデユーサの
組立て製造過程が極めて単純化できる。(1) The surface additional film 5 is a piezoelectric film 3 whose object is limited.
Unlike the above, it is possible to select from among many types according to the application, and a combination of the active surface side electrode 4' and the surface additional film 5 with strong adhesion strength can be arbitrarily selected. Strong adhesion strength means that
This means that in the present invention, the peeling of the electrodes that occurs in the conventional transducer described above, especially during assembly, does not occur, and in fact, since there is no peeling of the electrodes 4', handling becomes easier. , the assembly and manufacturing process of the transducer can be extremely simplified.
(2) ポリエステル、ポリイミドなど耐熱性のある
表面付加膜を用いる場合には表面付加膜上の動
作面側電極4′と金属ケース、あるいは他の導
体との間でハンダ付処理も可能となる。これ
は、電気的接続を信頼性の高いものとするとと
もに、耐水性、耐薬品性等の向上に寄与する。
すなわち、この態様の本発明によると、金属ケ
ース6と表面付加膜5との接着部からの水(あ
るいは薬品)の侵入による電極4の侵蝕によつ
て導通が充分働かなくなり機能の低下をきたす
という従来の超音波トランスデユーサ構造体の
欠点をカバーできる。(2) When a heat-resistant surface-added film such as polyester or polyimide is used, soldering can be performed between the active surface side electrode 4' on the surface-added film and the metal case or other conductor. This makes the electrical connection highly reliable and contributes to improving water resistance, chemical resistance, etc.
That is, according to this aspect of the present invention, the electrode 4 is eroded due to water (or chemicals) entering from the bonded portion between the metal case 6 and the surface-added film 5, and the conduction does not work sufficiently, resulting in a decrease in function. The drawbacks of conventional ultrasonic transducer structures can be covered.
(3) 動作面側電極となる導電性薄膜が、圧電的に
非活性の表面付加膜上に接着されているので、
表面付加膜上での導電性薄膜の例えばエツチン
グ加工が可能となり、目的に応じた多様のパタ
ーンの形状を有する導電性薄膜を作成しうる。(3) Since the conductive thin film that becomes the electrode on the active side is adhered to the piezoelectrically inactive surface-added film,
For example, etching processing of the conductive thin film on the surface-added film becomes possible, and conductive thin films having various pattern shapes depending on the purpose can be created.
(4) 表面付加膜5とその膜上に形成された動作面
側電極4′の大きさは、導電性の金属ケース6
との電気的接続の場所の関係で可能な限り任意
に選べるので、その接点に自由度が生じトラン
スデユーサの製作上有利となる。(4) The size of the surface additional film 5 and the active surface side electrode 4' formed on the film is the same as that of the conductive metal case 6.
Since the electrical connection can be selected as arbitrarily as possible in relation to the location of the electrical connection, there is a degree of freedom in the contact point, which is advantageous in manufacturing the transducer.
また、必要に応じて、動作面側電極4′が接
着された表面付加膜5の一部分をフレキシブル
導電ケーブルとして用いることができ、この場
合、複雑な配線であつても配線作業が容易とな
り、かつ、コンパクト化がはかれる。 Further, if necessary, a part of the surface additional film 5 to which the operating surface side electrode 4' is adhered can be used as a flexible conductive cable. In this case, even if the wiring is complicated, wiring work becomes easy and , compactness can be achieved.
(5) 従来の超音波トランスデユーサ構造体のよう
に圧電膜上に付着させた薄膜電極4上で電気的
コンタクトをとる構造の場合には、圧電膜を電
気的コンタクト点、つまり、金属ケースと接す
る位置まで拡張して設ける必要があつたが、本
発明ではその必要がなく、圧電膜は必要最小な
大きさに限定できる。したがつて圧電膜を曲げ
たりするような加工工程が少なくなり、信頼性
の高いトランスデユーサとなる。(5) In the case of a conventional ultrasonic transducer structure in which electrical contact is made on the thin film electrode 4 attached to the piezoelectric film, the piezoelectric film is connected to the electrical contact point, that is, the metal case. However, in the present invention, this is not necessary and the piezoelectric film can be limited to the minimum necessary size. Therefore, the number of processing steps such as bending the piezoelectric film is reduced, resulting in a highly reliable transducer.
以上の如く、本発明による電極形成はトランス
ジユーサの安定性、信頼性、寿命の改善に役立つ
ばかりでなく、トランスデユーサの構造に限定を
少なくし、多様な構造、形状のトランスデユーサ
を容易に製造可能とするものである。 As described above, the electrode formation according to the present invention not only helps improve the stability, reliability, and lifespan of the transducer, but also reduces limitations on the structure of the transducer, allowing transducers of various structures and shapes to be used. This makes it easy to manufacture.
なお、本発明は高分子圧電膜を振動子に用いる
場合について述べたが、一般に本技術は無機圧電
体を振動子とするトランスデユーサにも適用し得
る。 Although the present invention has been described with respect to the case where a polymeric piezoelectric film is used as a vibrator, the present technology can generally be applied to a transducer that uses an inorganic piezoelectric material as a vibrator.
第1図は、高分子圧電膜を用いた従来の超音波
トランスデユーサの基本構造の一例を示す図、第
2図は、第1図の改良であつて、表面付加膜を付
加した従来の超音波トランスデユーサを示す図、
第3図は、本発明にかかる超音波トランスデユー
サの構造を示す図である。
符号の説明:1:支持基板、2,2′:背面側
電極、3:高分子圧電膜、4,4′:動作面側電
極、5:表面保護膜、6:金属ケース、7:プラ
スチツクケース、8:導線。
Fig. 1 shows an example of the basic structure of a conventional ultrasonic transducer using a polymer piezoelectric film, and Fig. 2 shows an improvement on Fig. a diagram showing an ultrasound transducer;
FIG. 3 is a diagram showing the structure of an ultrasonic transducer according to the present invention. Explanation of symbols: 1: Support substrate, 2, 2': Back side electrode, 3: Polymer piezoelectric film, 4, 4': Operating side electrode, 5: Surface protective film, 6: Metal case, 7: Plastic case , 8: Conductor.
Claims (1)
作面側電極と、表面付加膜とをこの順序に積層し
てなる超音波トランスデユーサにおいて、前記動
作面側電極を前記表面付加膜上にあらかじめ形成
せしめ、次いで該電極と前記圧電性の膜または板
とを接着せしめてなる超音波トランスデユーサ構
造体。1. In an ultrasonic transducer in which a piezoelectric film or plate, an electrode on the active side of this film or plate, and a surface-added film are laminated in this order, the electrode on the active side is laminated on the surface-added film. an ultrasonic transducer structure formed by forming the electrode in advance and then bonding the electrode and the piezoelectric film or plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10549481A JPS587998A (en) | 1981-07-08 | 1981-07-08 | Ultrasonic transducer structure material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10549481A JPS587998A (en) | 1981-07-08 | 1981-07-08 | Ultrasonic transducer structure material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS587998A JPS587998A (en) | 1983-01-17 |
| JPS6133512B2 true JPS6133512B2 (en) | 1986-08-02 |
Family
ID=14409145
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10549481A Granted JPS587998A (en) | 1981-07-08 | 1981-07-08 | Ultrasonic transducer structure material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS587998A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6096996A (en) * | 1983-11-01 | 1985-05-30 | Olympus Optical Co Ltd | Ultrasonic transducer |
| JPS61144565A (en) * | 1984-12-18 | 1986-07-02 | Toshiba Corp | High-polymer piezo-electric type ultrasonic probe |
| JPS62133897A (en) * | 1985-12-06 | 1987-06-17 | Tokyo Keiki Co Ltd | Ultrasonic probe |
| KR100369861B1 (en) * | 2000-05-01 | 2003-01-29 | 주식회사 월텍 | Supersonic waves transducer for semiconductor thin film type and manufacture method therof |
-
1981
- 1981-07-08 JP JP10549481A patent/JPS587998A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS587998A (en) | 1983-01-17 |
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