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JPS6137230B2 - - Google Patents
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JPS6137230B2 - - Google Patents

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Publication number
JPS6137230B2
JPS6137230B2 JP53151559A JP15155978A JPS6137230B2 JP S6137230 B2 JPS6137230 B2 JP S6137230B2 JP 53151559 A JP53151559 A JP 53151559A JP 15155978 A JP15155978 A JP 15155978A JP S6137230 B2 JPS6137230 B2 JP S6137230B2
Authority
JP
Japan
Prior art keywords
silicon carbide
sliding member
surface layer
substrate
alumina
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53151559A
Other languages
Japanese (ja)
Other versions
JPS5580784A (en
Inventor
Saburo Tabata
Ryoji Makabe
Kanji Matsuo
Yasuhiro Akune
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Pillar Packing Co Ltd
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Nippon Pillar Packing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology, Nippon Pillar Packing Co Ltd filed Critical Agency of Industrial Science and Technology
Priority to JP15155978A priority Critical patent/JPS5580784A/en
Publication of JPS5580784A publication Critical patent/JPS5580784A/en
Publication of JPS6137230B2 publication Critical patent/JPS6137230B2/ja
Granted legal-status Critical Current

Links

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  • Sliding-Contact Bearings (AREA)
  • Mechanical Sealing (AREA)
  • Physical Vapour Deposition (AREA)

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、摺動部材の製造方法に関し、更に詳
しくは、マグネトロンスパツタ法によりアルミナ
からなる基体上に高蒸着速度で炭化ケイ素の鏡面
表面層を形成させる摺動部材の製造方法に関す
る。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for manufacturing a sliding member, and more specifically, a mirror surface layer of silicon carbide is deposited on a substrate made of alumina at a high deposition rate by a magnetron sputtering method. The present invention relates to a method of manufacturing a sliding member.

従来技術とその問題点 従来、メカニカルシール、軸受、タービン・ポ
ンプ部品等の摺動機構部で使用される摺動部材と
して、炭化ケイ素の優れた特性を活用すべく、カ
ーボン基体上に炭化ケイ素の皮膜を形成させたも
のがある。しかしながら、この摺動部材は、カー
ボンからなる基体が、皮膜である炭化ケイ素に比
して機械的特性(特にヤング率)に劣るので、苛
酷な使用条件下では、基体に歪みが生じるなどの
問題点がある。従つて、この摺動部材には、使用
条件、用途等の点で制約があり、皮膜である炭化
ケイ素の優れた特性が充分に発揮されるにはいた
つていない。
Conventional technology and its problems Conventionally, in order to utilize the excellent properties of silicon carbide as a sliding member used in sliding mechanisms such as mechanical seals, bearings, and turbine/pump parts, silicon carbide was deposited on a carbon substrate. Some have a film formed on them. However, the carbon base of this sliding member has inferior mechanical properties (particularly Young's modulus) compared to the silicon carbide coating, so there are problems such as distortion of the base under harsh usage conditions. There is a point. Therefore, this sliding member has limitations in terms of usage conditions, applications, etc., and the excellent properties of the silicon carbide film have not been fully exhibited.

問題点を解決するための手段 本発明者は、上記の如き従来技術の問題点に鑑
みて種々研究を重ねた結果、アルミナからなる基
体上に特定の条件下にマグネトロンスパツタ法に
より炭化ケイ素の鏡面状態の表面層を形成させる
場合には、従来技術の問題点を実質的に解消し得
る摺動部材が得られることを見出した。即ち、本
発明は、以下の方法を提供するものである: 真空槽内において、陰極ケイ素ターゲツトによ
り高周波電力を印加して電界を設け、該陰極ケイ
素ターゲツトの近傍に永久磁石を配置することよ
り磁場を設け、これ等の電界と磁場とが直交に作
用する直交電磁場を形成し、陰極ケイ素ターゲツ
トに不活性ガスを衝突させ、反応性ガスの存在下
に500〜1000℃に加熱したアルミナからなる基体
上に3〜6μ/hrの蒸着速度で炭化ケイ素からな
る鏡面層を形成させることを特徴とする摺動部材
の製造方法。
Means for Solving the Problems As a result of various studies in view of the problems of the prior art as described above, the present inventor has discovered that silicon carbide can be deposited on a substrate made of alumina by magnetron sputtering under specific conditions. It has been found that when a mirror-like surface layer is formed, a sliding member that can substantially eliminate the problems of the prior art can be obtained. That is, the present invention provides the following method: In a vacuum chamber, an electric field is created by applying high frequency power through a cathode silicon target, and a magnetic field is created by placing a permanent magnet near the cathode silicon target. A substrate made of alumina is heated to 500 to 1000°C in the presence of a reactive gas by forming an orthogonal electromagnetic field in which the electric field and magnetic field act orthogonally to each other. A method for manufacturing a sliding member, comprising forming a mirror layer made of silicon carbide thereon at a deposition rate of 3 to 6 μ/hr.

一般に、摺動部材の摺動接触面としての炭化ケ
イ素被覆層の優れた特性を充分に発揮させる基体
は、機械的特性(特にヤング率)に優れ、高負荷
に対しても歪等を生ぜず、かつ炭化ケイ素との熱
膨脹係数の差が比較的小さい材料でなければなら
ない。本発明者は、種々の材料について試験を重
ねた結果、Al2O3、Fe2O3、MgO、ZnO、ZrO2
ThO2等の金属酸化物が、比較的良好に上記の要
件を充すことを見出した。そして、引続く研究に
おいて、これらの金属酸化物中でも、機械的強度
に優れ、耐摩耗性にも優れ、かつ被覆さるべき炭
化ケイ素に近い熱膨脹係数を有していることか
ら、アルミナ(Al2O3)が基体として最適である
ことを見出した。
In general, a substrate that fully exhibits the excellent properties of the silicon carbide coating layer as the sliding contact surface of a sliding member has excellent mechanical properties (especially Young's modulus) and does not cause distortion even under high loads. The material must also have a relatively small difference in coefficient of thermal expansion from silicon carbide. As a result of repeated tests on various materials, the inventor found that Al 2 O 3 , Fe 2 O 3 , MgO, ZnO, ZrO 2 ,
It has been found that metal oxides such as ThO 2 meet the above requirements relatively well. Subsequent research revealed that among these metal oxides, alumina (Al 2 O 3 ) was found to be optimal as a substrate.

基体上に被覆層を形成させる方法としては、
種々の方法が存在するが、本発明においては、特
定条件下に実施されるマグネトロンスパツタ法に
依ることを必須とする。即ち、化学的蒸着法にお
いては、基体を高周波誘導加熱により1500℃以上
とする必要があるので、非導電性のアルミナを基
体とする場合には採用し難い、又、物理的蒸着法
の一方法であるイオンプレーテイング法によりカ
ーボン基体上に炭化ケイ素皮膜を形成させる方法
として、例えば特開昭52―90508号公報に記載の
方法があるが、この方法も非導電性のアルミナを
基体とする場合には使用し難い。
The method for forming the coating layer on the substrate is as follows:
Although various methods exist, the present invention requires a magnetron sputtering method carried out under specific conditions. In other words, in the chemical vapor deposition method, it is necessary to heat the substrate to 1500°C or higher by high-frequency induction heating, which is difficult to use when using non-conductive alumina as the substrate. As a method of forming a silicon carbide film on a carbon substrate by the ion plating method, for example, there is a method described in JP-A-52-90508, but this method also applies when non-conductive alumina is used as the substrate. difficult to use.

本発明者の研究によれば、物理的蒸着法のうち
のスパツタ法による場合には、たしかにアルミナ
基体上に炭化ケイ素の複覆を形成させることは可
能であることが判明した。しかしながら、従来の
スパツタ法は、蒸着速度が遅いことが最大の欠点
であり、アルミナ基体上に炭化ケイ素からなる被
覆層を形成させる場合の蒸着速度は、0.3μm/
hr程度に過ぎない。従つて、摺動部材として実用
化し得る厚さの炭化ケイ素被覆膜層を工業的規模
で形成させる方法としては、適切ではない。しか
るに、本発明で採用するマグネトロンスパツタ法
によれば、陰極ケイ素ターゲツトにより高周波電
力を印加して電界を設け、該陰極ケイ素ターゲツ
トの近傍に永久磁石を配置することにより磁場を
設け、これら電界と磁場とが直交に作用する直交
電子磁場を形成させる場合には、基体たるアルミ
ナに対する炭化ケイ素の蒸着速度は、通常のスパ
ツタ法の10倍以上にも達するので、摺動部材の経
済的大量生産が可能となつた。
According to the research conducted by the present inventors, it has been found that it is indeed possible to form a double coating of silicon carbide on an alumina substrate using the sputtering method, which is one of the physical vapor deposition methods. However, the biggest drawback of the conventional sputtering method is that the deposition rate is slow, and when forming a coating layer made of silicon carbide on an alumina substrate, the deposition rate is 0.3 μm/
It's only about hr. Therefore, this method is not suitable as a method for forming on an industrial scale a silicon carbide coating layer having a thickness that can be put to practical use as a sliding member. However, according to the magnetron sputtering method adopted in the present invention, an electric field is created by applying high frequency power using a cathode silicon target, and a magnetic field is created by placing a permanent magnet near the cathode silicon target, and these electric fields and When an orthogonal electron magnetic field that acts orthogonally to the magnetic field is formed, the deposition rate of silicon carbide on the alumina substrate is more than 10 times that of the normal sputtering method, making it possible to economically mass produce sliding parts. It became possible.

以下、図面を参照しつつ、本発明方法を更に詳
細に説明する。
Hereinafter, the method of the present invention will be explained in more detail with reference to the drawings.

第1図は、本発明方法により得られた摺動部材
の一例としてメカニカルシールの密封環を示す。
摺動部材1のアルミナからなる基体2には、後述
するマグネトロンスパツタ法により、炭化ケイ素
からなる表面層3が強固かつ緻密に被覆形成され
ている。この表面層3の表面(第1図において上
面)が他の機械的部品等と摺動する摺動面4とな
る。この摺動面4は、非常に平担で且つ鏡面状の
表面である。鏡面上の表面である摺動面4は、基
体2に表面層3をマグネトロンスパツタ法によつ
て被覆形成した後、研磨、ラツプ等の仕上げ加工
を施すことなく、マグネトロンスパツタ法のみに
よつて表面層3を被覆形成すれば自動的に鏡面状
の表面を備えた表面層3を基体2上に形成できる
ことが確認された。このような摺動部材1を好適
に製造できる装置の一例を第2図に示す。
FIG. 1 shows a sealing ring of a mechanical seal as an example of a sliding member obtained by the method of the present invention.
A base body 2 made of alumina of the sliding member 1 is coated firmly and densely with a surface layer 3 made of silicon carbide by the magnetron sputtering method described later. The surface of this surface layer 3 (the upper surface in FIG. 1) becomes a sliding surface 4 that slides on other mechanical parts and the like. This sliding surface 4 is a very flat and mirror-like surface. The sliding surface 4, which is a mirror surface, is formed by coating the base 2 with the surface layer 3 by the magnetron sputtering method, and then applying only the magnetron sputtering method without performing any finishing processing such as polishing or lapping. It was confirmed that the surface layer 3 having a mirror-like surface can be automatically formed on the substrate 2 by coating the surface layer 3 thereon. An example of an apparatus that can suitably manufacture such a sliding member 1 is shown in FIG.

図中、2はアルミナからなる基体、5は真空
槽、6は不活性ガス排気口、7はケイ素ターゲツ
ト、8は永久磁石、9はヒーター、10はシヤツ
ター、11は不活性ガスの導入口、12は炭化水
素ガス導入口、13,13′は各々マツチングボ
ツクス、14,14′は夫々高周波電源、15は
活性化電極、16は冷却用パイプを示す。この装
置は形態上マグネトロンスパツタ装置と称せられ
るものであり、特にケイ素ターゲツトの近傍に永
久磁石8を配することによつて、真空槽5内にお
いて、直交電磁場を形成するので、基体2上に付
着される炭化ケイ素表面層の付着速度を従来の十
倍乃至数十倍の3〜6μm/hrのオーダーとする
ことが出来る。即ち、図示装置は、摺動部材1が
産業用途に供せられたとき、摩耗による耐久寿命
との関係により導き出した必要な炭化ケイ素から
なる表面層3の厚さ、即ち、10〜50μmの必要厚
さを短時間にて形成でき、実用生産上極めて有用
である。この装置の操作を説明すると、まずヒー
ター9の上に、基体2を置く。基体2は複数個を
ヒーター9上において一度に複数個の摺動部材を
得ることも出来る。次に真空槽5内を10-6TORR
オーダーまで排気し、ヒーター9を500℃〜1000
℃の低温(CVDに比して)で保持する。そして
導入口12より反応性ガスとして炭化水素ガス
(例えばC2H2)を10-5TORR〜10-4TORRオーダー
になるよう導入し、続いて導入口11より不活性
ガス(例えばAr)を導入して10-3TORRオーダ
ーにて200分間、マグネトロンスパツタ法による
蒸着を行なう。この様にして、例えば、第1図に
示した摺動部材1を製造することができる。
In the figure, 2 is a base made of alumina, 5 is a vacuum chamber, 6 is an inert gas exhaust port, 7 is a silicon target, 8 is a permanent magnet, 9 is a heater, 10 is a shutter, 11 is an inert gas inlet, 12 is a hydrocarbon gas inlet, 13 and 13' are matching boxes, 14 and 14' are high frequency power supplies, 15 is an activation electrode, and 16 is a cooling pipe. This device is called a magnetron sputter device in terms of form, and by arranging a permanent magnet 8 near the silicon target, an orthogonal electromagnetic field is formed in the vacuum chamber 5, so that the The deposition rate of the silicon carbide surface layer can be on the order of 3 to 6 μm/hr, which is ten to several tens of times the conventional rate. That is, the illustrated device has a necessary thickness of the surface layer 3 made of silicon carbide, which is 10 to 50 μm, derived from the relationship with the durability life due to wear when the sliding member 1 is used for industrial purposes. Thickness can be formed in a short time, making it extremely useful for practical production. To explain the operation of this device, first, the base 2 is placed on the heater 9. It is also possible to obtain a plurality of sliding members at once by placing a plurality of base bodies 2 on the heater 9. Next, the inside of vacuum chamber 5 is 10 -6 TORR
Exhaust to order and heat heater 9 to 500℃~1000℃
Hold at low temperature (compared to CVD) of °C. Then, a hydrocarbon gas (e.g., C 2 H 2 ) is introduced as a reactive gas through the inlet 12 to an order of 10 -5 TORR to 10 -4 TORR, and then an inert gas (e.g., Ar) is introduced through the inlet 11 . After introduction, vapor deposition was performed using the magnetron sputtering method for 200 minutes on the order of 10 -3 TORR. In this way, for example, the sliding member 1 shown in FIG. 1 can be manufactured.

発明の効果 本発明方法により得られる摺動部材は、基体と
表面層とが非常に優れた密着性を有し、かつ表面
層である炭化ケイ素は強固で緻密であり、一方基
体は機械的強度等に優れた特性を持つアルミナな
ので、基体と表面層との両材料の特性の相乗効果
によつて十二分な材料力学的特性を発揮し得るよ
うになる。従つて本発明に従えば、表面層のもつ
耐摩耗性と低摩擦係数を生かしつつ、歪み等を生
じない基材の特性と両々相俟つて優れた摺動部材
を製造することができる。そしてこの摺動部材を
メカニカルシールの密封環、軸受のすべり面、タ
ービン・ポンプ等の摺動部分の部品として使用す
る場合には、その優れた効果が発揮される。
Effects of the Invention The sliding member obtained by the method of the present invention has excellent adhesion between the base and the surface layer, and the surface layer of silicon carbide is strong and dense, while the base has mechanical strength. Since alumina has excellent properties such as, the synergistic effect of the properties of both the base material and the surface layer makes it possible to exhibit sufficient material mechanical properties. Therefore, according to the present invention, it is possible to manufacture a sliding member that is excellent in that it takes advantage of the wear resistance and low coefficient of friction of the surface layer, and also has the characteristics of the base material that do not cause distortion. When this sliding member is used as a sealing ring of a mechanical seal, a sliding surface of a bearing, a part of a sliding part of a turbine pump, etc., its excellent effects are exhibited.

なお、本発明方法において、陰極ターゲツトを
Ti、Ta、B等に変えれば、TiC、TaC、BaC等か
らなる被覆表面層が得られ、一方反応性ガスを
NH3、N2等に変えれば、Si3N4、TiN、BN等から
なる被覆表面層が得られる。
In addition, in the method of the present invention, the cathode target is
By changing to Ti, Ta, B, etc., a coating surface layer consisting of TiC, TaC, BaC, etc. can be obtained, while the reactive gas can be changed to
By changing to NH 3 , N 2 , etc., a coated surface layer consisting of Si 3 N 4 , TiN, BN, etc. can be obtained.

実施例 以下に実施例を示し、本発明の特徴とするとこ
ろをより一層明らかにする。
Examples Examples are shown below to further clarify the features of the present invention.

実施例 1 外形30mm×内径20mm×厚さ8mmのアルミナから
なる基体に炭化ケイ素からなる表面層を形成させ
た。操作条件は、高周波電力:500W、アセチレ
ン(C2H2)分圧:2×10-4TORR、スパツタ圧
力:2×10-3TORR、アルミナ基体温度:60℃、
保持時間:200分であつた。形成された炭化ケイ
素の表面層厚さは10.8μmであつた。表面層は、
鏡面状を呈しており、そのビツカース硬度は、
3000Kg/mm2であつた。又、炭化ケイ素からなる表
面層は、アルミナからなる基体に直接蒸着してい
るにもかかわらず、基体に強固に密着していた。
Example 1 A surface layer made of silicon carbide was formed on a base made of alumina and having an outer diameter of 30 mm, an inner diameter of 20 mm, and a thickness of 8 mm. The operating conditions were: high frequency power: 500W, acetylene (C 2 H 2 ) partial pressure: 2×10 -4 TORR, sputtering pressure: 2×10 -3 TORR, alumina substrate temperature: 60°C,
Retention time: 200 minutes. The thickness of the surface layer of silicon carbide formed was 10.8 μm. The surface layer is
It has a mirror-like surface, and its Bitkers hardness is
It was 3000Kg/ mm2 . In addition, the surface layer made of silicon carbide was firmly adhered to the substrate although it was directly deposited on the substrate made of alumina.

かくして得られた摺動部材を鈴木式摩耗試験機
により100時間のドライ摩耗試験に供した後、1/1
000mmまで測定できる表面測定機で摩耗量を測定
したが、摩耗量はゼロであつた。
After subjecting the thus obtained sliding member to a 100-hour dry wear test using a Suzuki type wear tester, 1/1
The amount of wear was measured using a surface measuring device capable of measuring up to 1,000 mm, and the amount of wear was zero.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明に係摺動部材の部分斜視図、第
2図は、第1図の摺動部材を製造するためのスパ
ツタ装置の概略断面図である。 1…摺動部材、2…基体、3…表面層、4…摺
動面、5…真空槽、8…永久磁石。
FIG. 1 is a partial perspective view of a sliding member according to the present invention, and FIG. 2 is a schematic sectional view of a sputtering apparatus for manufacturing the sliding member of FIG. 1. DESCRIPTION OF SYMBOLS 1...Sliding member, 2...Substrate, 3...Surface layer, 4...Sliding surface, 5...Vacuum chamber, 8...Permanent magnet.

Claims (1)

【特許請求の範囲】[Claims] 1 真空槽内において、陰極ケイ素ターゲツトに
より高周波電力を印加して電界を設け、該陰極ケ
イ素ターゲツトの近傍に永久磁石を配置すること
により磁場を設け、これ等の電界と磁場とが直交
に作用する直交電磁場を形成し、陰極ケイ素ター
ゲツトに不活性ガスを衝突させ、反応性ガスの存
在下に500〜1000℃に加熱したアルミナからなる
基体上に3〜6μm/hrの蒸着速度で炭化ケイ素
からなる鏡面層を形成させることを特徴とする摺
動部材の製造方法。
1. In a vacuum chamber, an electric field is created by applying high frequency power using a cathode silicon target, and a magnetic field is created by placing a permanent magnet near the cathode silicon target, and these electric fields and magnetic fields act orthogonally to each other. An orthogonal electromagnetic field is formed and the cathodic silicon target is bombarded with an inert gas to deposit silicon carbide on a substrate made of alumina heated to 500-1000°C in the presence of a reactive gas at a deposition rate of 3-6 μm/hr. A method for manufacturing a sliding member, comprising forming a mirror layer.
JP15155978A 1978-12-07 1978-12-07 Sliding member Granted JPS5580784A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15155978A JPS5580784A (en) 1978-12-07 1978-12-07 Sliding member

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15155978A JPS5580784A (en) 1978-12-07 1978-12-07 Sliding member

Publications (2)

Publication Number Publication Date
JPS5580784A JPS5580784A (en) 1980-06-18
JPS6137230B2 true JPS6137230B2 (en) 1986-08-22

Family

ID=15521163

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15155978A Granted JPS5580784A (en) 1978-12-07 1978-12-07 Sliding member

Country Status (1)

Country Link
JP (1) JPS5580784A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58181775A (en) * 1982-02-27 1983-10-24 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Carbon-containing sliding layer and manufacture
JPS63119963U (en) * 1986-08-29 1988-08-03
JPS63111313A (en) * 1986-10-28 1988-05-16 Kyocera Corp Sliding device
JPS63171935U (en) * 1987-04-27 1988-11-09
JPH01316517A (en) * 1988-06-16 1989-12-21 Eagle Ind Co Ltd Sliding member and manufacture thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5290508A (en) * 1976-01-14 1977-07-29 Toyo Tanso Co Method of forming fine antiioxidizing silicon carbide coating on carbon material surfaces

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JPS5580784A (en) 1980-06-18

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