JPS6138627B2 - - Google Patents
Info
- Publication number
- JPS6138627B2 JPS6138627B2 JP53103511A JP10351178A JPS6138627B2 JP S6138627 B2 JPS6138627 B2 JP S6138627B2 JP 53103511 A JP53103511 A JP 53103511A JP 10351178 A JP10351178 A JP 10351178A JP S6138627 B2 JPS6138627 B2 JP S6138627B2
- Authority
- JP
- Japan
- Prior art keywords
- powder
- photoconductive
- photoconductive element
- container
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 21
- 239000011521 glass Substances 0.000 claims description 14
- 239000000843 powder Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000005245 sintering Methods 0.000 claims description 9
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 229910000365 copper sulfate Inorganic materials 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000000725 suspension Substances 0.000 claims description 3
- 239000012190 activator Substances 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims 3
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims 3
- 239000010408 film Substances 0.000 description 8
- 238000005507 spraying Methods 0.000 description 6
- 230000004907 flux Effects 0.000 description 5
- 238000001556 precipitation Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910000366 copper(II) sulfate Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- YKYOUMDCQGMQQO-UHFFFAOYSA-L cadmium dichloride Chemical compound Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009770 conventional sintering Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Light Receiving Elements (AREA)
- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】
本発明は、サンドイツチ形構造の光導電素子の
製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a photoconductive element having a sandwich structure.
従来より、CdS、CdSe、CdS―CdSeなどの
―族化合物電導体で組成される光導電素子は、
第1図に示すように、セラミツクなどの基板1の
上に光導電層2を形成し、この光導電層2の片面
に、対向して金属電極3,4を設け、それにリー
ド線5,6を接続したものであり、結晶の一面だ
けを利用したいわゆるラテラル構造であつた。こ
のラテラル構造の光導電素子は、受光面の約半分
が金属電極3,4で覆われているので、極めて効
率が悪く、小さな受光面積で光感度の高いものが
得られなかつた。 Conventionally, photoconductive elements composed of - group compound conductors such as CdS, CdSe, and CdS--CdSe,
As shown in FIG. 1, a photoconductive layer 2 is formed on a substrate 1 made of ceramic or the like, metal electrodes 3 and 4 are provided facing each other on one side of the photoconductive layer 2, and lead wires 5 and 6 are provided thereon. It was a so-called lateral structure that used only one side of the crystal. Since approximately half of the light-receiving surface of this lateral structure photoconductive element is covered with the metal electrodes 3 and 4, the efficiency is extremely low, and a high photosensitivity cannot be obtained with a small light-receiving area.
以上のようなラテラル構造の光導電素子に対
し、最近第2図に示すようなサンドイツチ構造の
光導電素子がある。これは、透明なガラス基板7
上に、酸化錫等からなる透明電極8をつけ、その
上に光導電層2を焼結し、この光導電層2と透明
電極8にそれぞれ電極3,4をつけ、それぞれの
電極3,4からリード線5,6を取り出してなる
ものである。そして、光は、ガラス基板7側から
入射し、透明電極8を透過し、光導電層8を照射
するようになつている。 In contrast to the above-mentioned photoconductive element having a lateral structure, there has recently been a photoconductive element having a sandwich structure as shown in FIG. This is a transparent glass substrate 7
A transparent electrode 8 made of tin oxide or the like is attached on top, a photoconductive layer 2 is sintered on top of the transparent electrode 8, and electrodes 3 and 4 are attached to the photoconductive layer 2 and the transparent electrode 8, respectively. The lead wires 5 and 6 are taken out from the. The light enters from the glass substrate 7 side, passes through the transparent electrode 8, and irradiates the photoconductive layer 8.
このサンドイツチ構造の光導電素子は、ラテラ
ル構造に比しつぎのような特徴を有する。 The photoconductive element having the sandwich structure has the following characteristics compared to the lateral structure.
(1) 光は、ガラス基板側から入射するので、電極
によるデツトエリアがなくなること。(1) Since light enters from the glass substrate side, there is no dead area caused by electrodes.
(2) 抵抗値が1/10以下になること。(2) The resistance value should be 1/10 or less.
(3) 応答特性にすぐれていること。(3) Excellent response characteristics.
(4) 微小な素子を高密度に集積できること。(4) The ability to integrate minute elements at high density.
以上のような特徴を有するサンドイツチ構造の
光導電素子を製造する方法として、
第1に、単結晶をスライスして用いる方法。 As a method for manufacturing a photoconductive element having a sandwich structure having the above-mentioned characteristics, the first method is to slice and use a single crystal.
第2に蒸着膜を用いる方法。 The second method is to use a vapor deposited film.
が有力である。しかしこれらの方法は、いずれも
つぎのような欠点がある。is likely. However, all of these methods have the following drawbacks.
(1) 第1、第2方法ともに、育生したままの状態
のままでは、光導電性が不十分すなわちS/N
比が小さいこと。(1) In both the first and second methods, if the growth is left as it is, the photoconductivity is insufficient, that is, the S/N
The ratio is small.
(2) 高抵抗すぎるため、何らかの後処理、例え
ば、結晶中にドナ準位やアクセプタ準位を形成
するための処理を必要とすること。(2) Because the resistance is too high, some kind of post-processing, for example, processing to form donor levels and acceptor levels in the crystal, is required.
(3) 第1方法は、有効面積が小さいこと。(3) The first method is that the effective area is small.
(4) 第2方法は、族元素の蒸気圧が高いために
化学量論比からのずれが大きくなり、再現性が
非常に悪いこと。(4) In the second method, the deviation from the stoichiometric ratio is large due to the high vapor pressure of the group elements, resulting in very poor reproducibility.
(5) 製造コストが非常に高いこと。(5) Manufacturing costs are very high.
などの理由からいずれの方法も実用に供し得な
い。For these reasons, neither method can be put to practical use.
これらの方法に対し、多結晶焼結法、すなわち
フラツクス溶融法でサンドイツチ構造が製造でき
れば上記のような問題点はない。しかし、サンド
イツチ構造上の絶対的な条件としてピンホールが
全くないことが必要となるが、従来の焼結法では
満足すべきものが得られにくく、いくつかの試み
が行なわれてきた。その1つとして、特公昭50―
26918号がある。この方法は、密閉容器内で回転
する回転リング上にガラス基板を並べ、ガラス基
板が局部加熱部から遠ざかつた低温場所の上部に
設置されたスプレーガンの下を通過する際、所定
厚にスプレー塗布し、続いて局部加熱部を通過す
るとき焼結し、これを所定の厚さになるまで繰返
し焼結成長させるようにしたものである。したが
つて第3図に示すように、ガラス基板7の透明電
極8の上には、複数層の光導電膜21〜24が形
成される。 In contrast to these methods, if a sandwich structure can be manufactured using a polycrystalline sintering method, that is, a flux melting method, the above-mentioned problems will not occur. However, as an absolute condition for the sandwich structure, it is necessary that there be no pinholes, but it is difficult to obtain a satisfactory result using conventional sintering methods, and several attempts have been made. One of them is the special public service in the 1970s.
There is issue 26918. In this method, glass substrates are arranged on a rotating ring that rotates in a closed container, and when the glass substrates pass under a spray gun installed at the top of a low-temperature area away from local heating, the glass substrates are sprayed to a predetermined thickness. Then, when passing through a local heating section, the material is sintered, and this process is repeatedly sintered and grown until it reaches a predetermined thickness. Therefore, as shown in FIG. 3, a plurality of photoconductive films 21 to 24 are formed on the transparent electrode 8 of the glass substrate 7.
このような焼結膜を多層積層する方法では、ピ
ンホールは、一層毎に減少してゆく状態が走査形
電子顕微鏡の観察で確かめられる。しかしなが
ら、粒子径の成長程度も、各層毎に異つてしま
う。したがつて、光導電素子の厚さ方向すなわち
2つの電極間では、抵抗値その他の特性に勾配を
有することとなり、極めて不都合である。また、
1層目21から4層目24程度までは、ピンホー
ルは明らかに減少してゆくが、層が積まれるにつ
れてフラツクス量も蓄積増加してゆき、これまで
に形成されていた層の中の粒子のうち、複数の粒
子が一度に結合して大きな粒子を形成するような
焼結が生生じることとなり、その際に、減少して
いたピンホールが再び増加してしまう。さらに、
塩化雰囲気すなわちCdCl2が高温中で気化したフ
ラツクス雰囲気中で、度々高温にすると、透明電
極(SnO2、In2O3、Au薄膜、Ni薄膜、Cr薄膜
等)が化学的変化をして電極自身高抵抗化してし
まうなどの欠点があつた。 In such a method of laminating multiple layers of sintered films, the state in which pinholes decrease with each layer can be confirmed by observation with a scanning electron microscope. However, the degree of particle size growth also differs from layer to layer. Therefore, the resistance value and other characteristics have a gradient in the thickness direction of the photoconductive element, that is, between the two electrodes, which is extremely disadvantageous. Also,
From the first layer 21 to the fourth layer 24 , the number of pinholes clearly decreases, but as the layers are piled up, the amount of flux accumulates and increases, and the amount of flux in the layers that have been formed so far increases. Among the particles, sintering occurs in which a plurality of particles combine at once to form large particles, and at this time, the number of pinholes that had been reduced increases again. moreover,
In a chloride atmosphere, that is, a flux atmosphere in which CdCl 2 is vaporized at high temperatures, when the temperature is frequently raised, the transparent electrode (SnO 2 , In 2 O 3 , Au thin film, Ni thin film, Cr thin film, etc.) undergoes chemical changes and the electrode It had drawbacks such as high resistance itself.
本発明は、上記点に鑑み、一層だけの焼結によ
つてピンホールのない多結晶膜を形成する製造方
法を提供することにある。 In view of the above points, the present invention provides a manufacturing method for forming a pinhole-free polycrystalline film by sintering only one layer.
以下本発明によるサンドイツチ構造光導電素子
の製造方法の具体的一実施例を説明する。 A specific embodiment of the method for manufacturing a photoconductive device with a sandwich structure according to the present invention will be described below.
(1) まず、CdSまたはCdSeの単独粉末または
CdS―CdSeの混合粉末、活性剤(CuSO4・
5H2O)、融剤(CdCl2)、水(H2O)の調合液が
作られる。具体的調合例として、CdS粉末と
CdSe粉末とを48時間以上ポールミルで粉砕し
て、なおかつ粒子径が1μm以下の粒子だけを
選別する。これらCdS粉末10gとCdSe粉末10
gとの混合粉末を用い、活性剤として、Cuイ
オン100ppmを含む硫酸銅溶液(CuSO4・
5H2O)18mlを1960mlの脱イオン水中に懸濁さ
せる。(1) First, CdS or CdSe alone powder or
CdS―CdSe mixed powder, activator ( CuSO4・
5H 2 O), a fluxing agent (CdCl 2 ), and water (H 2 O). As a specific formulation example, CdS powder and
CdSe powder is ground in a pole mill for over 48 hours, and only particles with a particle size of 1 μm or less are selected. 10g of these CdS powders and 10g of CdSe powder
Copper sulfate solution containing 100 ppm of Cu ions ( CuSO4 .
5H 2 O) are suspended in 1960 ml of deionized water.
(2) 一方、一側面に透明電極8を形成したガラス
基板7が用意される。この透明電極8として
は、酸化錫(SnO2)、酸化インジウム
(In2O3)、酸化インジウム・錫(ITO)、金属薄
膜(Au、Ni、Cr等のスパツタリング膜)が使
用される。(2) On the other hand, a glass substrate 7 with a transparent electrode 8 formed on one side is prepared. As the transparent electrode 8, tin oxide (SnO 2 ), indium oxide (In 2 O 3 ), indium tin oxide (ITO), or a metal thin film (sputtered film of Au, Ni, Cr, etc.) is used.
(3) 耐熱ガラス容器の底面に、前記透明電極8に
ついたガラス基板7を整列し、そのガラス容器
の中に前記懸濁液を40ml注入する。(3) Arrange the glass substrates 7 attached to the transparent electrodes 8 on the bottom of a heat-resistant glass container, and pour 40 ml of the suspension into the glass container.
(4) CdS―CdSe粉末が沈澱を完了した後、上澄
水を紙等を介して抜き去り、そして十分乾燥す
る。(4) After the CdS--CdSe powder has completed precipitation, remove the supernatant water through paper, etc., and dry thoroughly.
(5) つぎに別に用意された耐熱ガラス容器に、沈
澱膜付着面を上にして配列し、焼結剤としての
塩化カドミウム(CdCl2)25mgを微結晶として
内側に付着してある蓋を前記容器に被せる。そ
して、約600℃で10〜20分間加熱することによ
り焼結する。焼結された多結晶膜である光導電
層2は、第4図のようにピンホールのない10〜
40μm程度の厚さとなる。(5) Next, arrange the precipitated film in a separately prepared heat-resistant glass container with the side to which it is attached facing up, and attach the lid with 25 mg of cadmium chloride (CdCl 2 ) as a sintering agent attached to the inside as microcrystals. Cover the container. Then, it is sintered by heating at about 600°C for 10 to 20 minutes. The photoconductive layer 2, which is a sintered polycrystalline film, has a diameter of 10 to 10 mm without pinholes as shown in FIG.
The thickness is approximately 40 μm.
(6) 焼結後、蒸留水で水洗いし、乾燥する。(6) After sintering, wash with distilled water and dry.
(7) 光導電層2と透明電極8とに、真空蒸着法に
より錫(Sn)の電極3,4をつける。(7) Tin (Sn) electrodes 3 and 4 are attached to the photoconductive layer 2 and the transparent electrode 8 by vacuum evaporation.
(8) 各電極3,4に導電性接着剤によりリード線
5,6を取り出す。(8) Take out the lead wires 5 and 6 from each electrode 3 and 4 using conductive adhesive.
(9) 透明固化樹脂により、リード線取り出し部分
を固定する。(9) Fix the lead wire extraction part with transparent solidified resin.
(10) 透明固化樹脂により、セル面全体を被覆し保
護する。(10) Cover and protect the entire cell surface with transparent solidified resin.
本発明の製造方法によれば、サンドイツチ形光
導電素子の有する前記したような特徴の他に、つ
ぎのような本発明特有の極めてすぐれた効果を有
する。 According to the manufacturing method of the present invention, in addition to the above-mentioned features of the Sandwich-type photoconductive element, the following extremely excellent effects unique to the present invention are achieved.
(1) 任意の膜厚の光導電素子が1回の沈澱と焼結
によつて可能であること。(1) A photoconductive element of any thickness can be produced by a single precipitation and sintering process.
(2) 吹付け法に比し、大面積化が容易であるこ
と。(2) Compared to the spraying method, it is easier to increase the area.
(3) 吹付け法に比し、膜厚の均一性が良く、製品
間の品質が一定し、歩留りがよいこと。(3) Compared to the spraying method, the film thickness is more uniform, the quality is consistent between products, and the yield is better.
(4) 吹付け法に比し、CdS、CdSe粉末、CdCl2融
剤などの材料の無駄が少ないこと。(4) Compared to the spraying method, there is less waste of materials such as CdS, CdSe powder, and CdCl 2 flux.
(5) 吹付け法では、多数回の吹付けにより、最初
に吹付けた層から順次暗抵抗が低くなり、S
(明抵抗)/N(暗抵抗)が悪くなる。しか
し、本発明の製造方法では、1回の沈澱、焼結
のためS/Nの劣化がないこと。(5) In the spraying method, by spraying many times, the dark resistance gradually decreases from the first sprayed layer, and the S
(bright resistance)/N (dark resistance) becomes worse. However, in the manufacturing method of the present invention, since precipitation and sintering are performed only once, there is no deterioration in S/N.
(6) 大量生産が可能でコストが安いこと。(6) Mass production is possible and costs are low.
ちなみに、本発明の方法で製造された光導電素
子と従来の光導電素子とでは、第5図の照度―抵
抗特性において、および第6図の一定照度の応答
性において図示したようなすぐれた特性を示すも
のである。 Incidentally, the photoconductive element manufactured by the method of the present invention and the conventional photoconductive element have excellent characteristics as shown in the illuminance-resistance characteristics in Figure 5 and the responsiveness at constant illuminance in Figure 6. This shows that.
第1図a,bは、ラテラル形光導電素子の正面
図とA―A線断面図、第2図a,bは、サンドイ
ツチ形光導電素子の正面図B―B線断面図、第3
図は従来の吹付け法による光導電層の断面図、第
4図は本発明の沈澱法による光導電層の断面図、
第5図は照度―抵抗特性図、第6図は応答性の特
性図である。
1……セラミツク基板、2……光導電層、3,
4……電極、5,6……リード線、7……ガラス
基板、8……透明電極。
Figures 1a and b are a front view and a cross-sectional view taken along the line A--A of a lateral type photoconductive element, Figures 2 a and b are a front view and a cross-sectional view taken along the line B-B of the sandwich-type photoconductive element;
The figure is a cross-sectional view of a photoconductive layer formed by a conventional spraying method, and FIG. 4 is a cross-sectional view of a photoconductive layer formed by a precipitation method of the present invention.
FIG. 5 is an illuminance-resistance characteristic diagram, and FIG. 6 is a response characteristic diagram. 1... Ceramic substrate, 2... Photoconductive layer, 3,
4... Electrode, 5, 6... Lead wire, 7... Glass substrate, 8... Transparent electrode.
Claims (1)
これらの混合物粉末と活性剤とを脱イオン水中に
懸濁し、この懸濁液を、透明電極付きガラス基板
をその底面に整列した容器中に注入して前記粉末
の沈澱膜を形成し、この沈澱膜を上向きにして焼
結剤の付着した容器内で加熱焼結し、この1回の
沈澱焼結により所定厚の光導電膜を形成し、これ
に電極およびリード線を取り付けてなる光導電素
子の製造方法。 2 懸濁液は、硫化カドミウム10g、セレン化カ
ドミウム10gの混合物粉末と、Cuイオン100ppm
を含む硫酸銅溶液18mlとを脱イオン水1960ml中に
懸濁してなる特許請求の範囲第1項記載の光導電
素子の製造方法。 3 硫化カドミウム粉末とセレン化カドミウム粉
末とは、それぞれ粒子径が1μm以下の微粉末か
らなる特許請求の範囲第2項記載の光導電素子の
製造方法。[Claims] 1 Cadmium sulfide, cadmium selenide, or a mixture powder thereof and an activator are suspended in deionized water, and this suspension is placed in a container in which a glass substrate with a transparent electrode is arranged on the bottom of the container. The powder is injected to form a precipitated film, and this precipitated film is turned upward and heated and sintered in a container to which a sintering agent is attached, and a photoconductive film of a predetermined thickness is formed by this one-time precipitated sintering. , a method for manufacturing a photoconductive element by attaching electrodes and lead wires thereto. 2 The suspension contains a powder mixture of 10 g of cadmium sulfide and 10 g of cadmium selenide, and 100 ppm of Cu ions.
2. A method for producing a photoconductive element according to claim 1, wherein 18 ml of a copper sulfate solution containing 18 ml of copper sulfate is suspended in 1960 ml of deionized water. 3. The method for manufacturing a photoconductive element according to claim 2, wherein the cadmium sulfide powder and the cadmium selenide powder are fine powders each having a particle size of 1 μm or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10351178A JPS5530824A (en) | 1978-08-25 | 1978-08-25 | Method of manufacturing photoconductive cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10351178A JPS5530824A (en) | 1978-08-25 | 1978-08-25 | Method of manufacturing photoconductive cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5530824A JPS5530824A (en) | 1980-03-04 |
| JPS6138627B2 true JPS6138627B2 (en) | 1986-08-30 |
Family
ID=14355982
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10351178A Granted JPS5530824A (en) | 1978-08-25 | 1978-08-25 | Method of manufacturing photoconductive cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5530824A (en) |
-
1978
- 1978-08-25 JP JP10351178A patent/JPS5530824A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5530824A (en) | 1980-03-04 |
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