JPS6138862B2 - - Google Patents
Info
- Publication number
- JPS6138862B2 JPS6138862B2 JP55005176A JP517680A JPS6138862B2 JP S6138862 B2 JPS6138862 B2 JP S6138862B2 JP 55005176 A JP55005176 A JP 55005176A JP 517680 A JP517680 A JP 517680A JP S6138862 B2 JPS6138862 B2 JP S6138862B2
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- shaped molded
- mold
- molded product
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W95/00—Packaging processes not covered by the other groups of this subclass
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
【発明の詳細な説明】
本発明はダイオードやトランジスターのような
半導体素子や、これら半導体の集積回路(以下半
導体類と称す)を気密収納するためのパツケージ
成形方法に関するものであり更に詳しくは予め成
形された、少なくとも1個が半導体類を収納する
ための窪みを有する2個の熱可塑性樹脂板状成形
品(以下板状成形品と称す)を合体用型に収容し
た状態で加熱した後、半導体類を装着したリード
フレームを挾み加圧合体させる半導体類のパツケ
ージ成形方法に於いて外観上もしくは場合によつ
ては半導体類の動作機能上障害となるフラツシユ
を合体段階で発生せしめず、かつ信頼性に優れた
封止性を得るためのフラツトパツケージ及びデユ
アルインラインパツケージ等のパーケージ成形方
法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a package forming method for airtightly housing semiconductor elements such as diodes and transistors, and integrated circuits of these semiconductors (hereinafter referred to as semiconductors). Two thermoplastic resin plate-shaped molded products (hereinafter referred to as plate-shaped molded products) having at least one recess for accommodating semiconductors are housed in a mold for combination and heated, and then the semiconductors are heated. In the package forming method for semiconductors, which involves sandwiching and pressurizing lead frames equipped with semiconductors, it is possible to ensure reliability by ensuring that no flash occurs during the assembly stage, which may impede the appearance or, in some cases, the operating function of the semiconductors. The present invention relates to a method for molding packages such as flat packages and dual-in-line packages to obtain excellent sealing properties.
従来最も普及しているエポキシ樹脂のトランス
フア封止成形法に於いては成形時の樹脂粘度が
高々102ポイズオーダーであるため、リードフレ
ームの厚みのバラツキ、成形金型加工の精度及び
成形使用にともなう摩耗や寸法の狂い等によりリ
ードフレーム上にエポキシ樹脂のフラツシユが発
生しやすく、外観上の問題はもとより鍍金の不均
一性、リードとソケツトとの接触不良や半田づけ
作業の妨げ等の原因となるため、除去作業が必要
となる等の欠点を有していた。 In the transfer sealing molding method of epoxy resin, which is the most widely used conventional method, the resin viscosity during molding is on the order of 10 to 2 poise at most, so there are variations in the thickness of the lead frame, precision of mold processing, and molding usage. Epoxy resin flashing is likely to occur on the lead frame due to wear and dimensional deviations, which can cause not only appearance problems but also uneven plating, poor contact between leads and sockets, and interference with soldering work. Therefore, it had drawbacks such as requiring removal work.
また2個の板状成形品による半導体類のパツケ
ージ成形方法においては使用する熱可塑性樹脂組
成物の本質的な流動特性および少なくとも板状成
形品の合体面のみを溶融流動させれば良いといつ
た成形方法の特殊性等のため合体時の樹脂組成物
の粘度は103〜104ポイズオーダーとエポキシ樹脂
に比べて格段に高く、フラツシユが本質的に発生
しにくい有利性はあるがそれでもなお第1図に示
したような従来提案されている窪み付金型1,
1′から板状成形品3,3′の溶融合体代2,2′
が突出している合体方法に於いては、合体用型の
温度を、板状成形品を構成する熱可塑性樹脂の流
動温度を考慮して適温に制御することによりフラ
ツシユの量を低減することはできても構造的な問
題からフラツシユを皆無にすることは出来なかつ
た。 In addition, in a semiconductor package molding method using two plate-shaped molded products, the essential flow characteristics of the thermoplastic resin composition used and the fact that at least only the combined surfaces of the plate-shaped molded products need to be melted and flowed are explained. Due to the special nature of the molding method, the viscosity of the resin composition when combined is on the order of 10 3 to 10 4 poise, which is much higher than that of epoxy resins, and although it has the advantage that flashing is essentially less likely to occur, it is still A conventionally proposed mold with a recess 1 as shown in Fig. 1,
1' to the plate-shaped molded products 3, 3' melted melt 2, 2'
In the case of a joining method in which there is a pronounced However, due to structural problems, it was not possible to completely eliminate flash.
このため、第2図に示したような改良方法が提
案されている。即ち、予め成形した少なくとも1
個(第2図では2個とも)が、半導体類を収納す
るための窪み5,5′を有し、溶融合体後にリー
ドフレーム4の表面6または裏面7と接する面を
それぞれ同一平面内に含む仮想断面8,8′の輪
郭をリードフレーム面に平行な面の最大輪郭とし
た形状の2個の板状成形品3,3′を、該仮想断
面8,8′の輪郭即ち合体後の最終製品に於いて
リードフレーム表裏面とそれぞれ接する部分の輪
郭と同一形成でかつ少なくとも該板状成形品3,
3′の溶融合体代2,2′の厚み分を深さとし、更
に合体前に板状成形品の溶融合体代2,2′がリ
ードフレームを固定する合体用型9,9′の型面
10,10′よりも突出しない形状とした板状成
形品収容窪み11,11′に収容した後、種々の
加熱手段例えば種々の加熱源による伝導、および
輻射等により溶融合体代を軟化溶融させた後2個
の合体用型でリードフレームを表裏両側より挾み
固定し、合体用型と独立して板状成形品をリード
フレームに圧着する板状成形品圧着機12,1
2′により板状成形品をリードフレームに圧着合
体させる方法が提案されている。 For this reason, an improved method as shown in FIG. 2 has been proposed. That is, at least one preformed
Each piece (both pieces in FIG. 2) has a recess 5, 5' for accommodating the semiconductor, and includes surfaces in contact with the front surface 6 or back surface 7 of the lead frame 4 after the molten material is formed, respectively, in the same plane. Two plate-shaped molded products 3, 3' each having a shape in which the contours of the virtual cross-sections 8,8' are the maximum contours of the plane parallel to the lead frame surface are assembled to At least the plate-shaped molded product 3, which has the same shape as the outline of the parts in contact with the front and back surfaces of the lead frame, respectively, in the product.
The depth is equal to the thickness of the molten metal parts 2, 2' of 3', and the mold surfaces 10 of the merging molds 9, 9' to which the molten metal parts 2, 2' of the plate-shaped molded products fix the lead frame before merging. , 10', and the molten product is softened and melted by various heating means such as conduction from various heating sources, radiation, etc. A plate-shaped molded product crimping machine 12, 1 that clamps and fixes a lead frame from both front and back sides between two merging dies, and crimps a plate-shaped molded product to the lead frame independently of the merging dies.
2' proposes a method in which a plate-shaped molded product is crimped and integrated with a lead frame.
この改良方法は有害なフラツシユを発生させ難
い点で有効な合体方法であるが、2個の板状成形
品の溶融合体代を軟化溶融させた後2個の合体用
型の合体部に半導体を装着したリードフレームを
移動させるかもしくは合体部に固定されたリード
フレームに向つて板状成形品を収容した合体用型
を移動せしめる工程のいずれかが必要であり、加
熱にともなう板状成形品の熱膨脹により多少のフ
ラツシユはさけられず、またこの移動に要する時
間を極力短くし、軟化溶融の状態を維持させるこ
とが信頼性の高い良好な封止性を得る上で必須の
要件となるが、この移動の時間内で周囲の雰囲気
に対して開放状態にある板状成形品やリードフレ
ームの合体面の温度低下によるものと考えられる
管理し難い外乱要因の為封止性に欠陥のある半導
体類のパツケージがまれではあるが発生するとい
う問題があつた。 This improved method is an effective joining method in that it does not easily cause harmful flashing, but after softening and melting the molten material of the two plate-shaped molded products, the semiconductor is applied to the joining part of the two joining molds. It is necessary to either move the mounted lead frame or move the joining mold containing the plate-shaped molded product toward the lead frame fixed to the combined part, and the process of moving the molded plate-shaped product as it heats up. Some flashing due to thermal expansion is unavoidable, and it is essential to minimize the time required for this movement and maintain a softened and molten state in order to obtain good and reliable sealing. Semiconductors with defective sealing properties due to disturbance factors that are difficult to control, which is thought to be caused by a temperature drop on the combined surface of plate-shaped molded products and lead frames that are open to the surrounding atmosphere during this time of movement. There was a problem that the package of 2000 occurred, although it was rare.
本発明はこのような欠点に鑑みてなされたもの
であり、以下本発明を実施の態様を示す図面によ
り詳細に説明する。 The present invention has been made in view of these drawbacks, and will be described in detail below with reference to drawings showing embodiments.
第3図に於いて、リードフレーム4に対をなす
合体用型9,9′で挾み、半導体類15を収納す
る側の板状成形品3の合体面16をリードフレー
ム4と接触させた状態で合体用型9の窪み17に
配置させ、もう一方の合体用型9′の少なくとも
一側面に合体用型のリードフレームと接する部分
18を残した状態で合体用型9′の窪み17′に貫
通する加熱体導入孔19をうがち、該導入孔より
加熱体20を合体用型の窪み17′内に挿入した
状態で該加熱体と接しないよう合体用型の窪み内
にもう一方の熱可塑性樹脂板状成形品3′を配置
させ、この状態で加熱体20により加熱後、加熱
体20を合体用型の窪み17′内から撤去し、次
いで窪み内に装着された板状成形品圧着機12,
12′により板状成形品を対向加熱合体せしめ
る。 In FIG. 3, the lead frame 4 is sandwiched between the pair of joining dies 9 and 9', and the joining surface 16 of the plate-shaped molded product 3 on the side that accommodates the semiconductors 15 is brought into contact with the lead frame 4. In this state, it is placed in the recess 17 of the combining mold 9', and the other combining mold 9' is placed in the recess 17' of the combining mold 9' with a portion 18 in contact with the lead frame of the combining mold remaining on at least one side. With the heating element 20 inserted into the recess 17' of the combining mold through the introduction hole, the other heating element is inserted into the recess of the combining mold so as not to come into contact with the heating element. The plastic resin plate-shaped molded product 3' is placed, heated in this state by the heating element 20, the heating element 20 is removed from the recess 17' of the combining mold, and then the plate-shaped molded product mounted in the recess is crimped. Machine 12,
12', the plate-shaped molded products are combined by opposing heating.
叙上の如く本発明においてはリードフレームを
板状成形品の加熱加圧に先立つて
(1) 対をなす合体用型の合体面によつてリードフ
レームを予め挾んだ状態にしておくこと
(2) リードフレームを挾んだ合体用型の接触型面
は板状成形品収納用の窪みの周囲が閉じられた
状態になるよう、合体用型のリードフレームと
接する部分を残した状態で合体用型の少なくと
も一側面に加熱体導入孔がうがたれていること
(3) 半導体類を装着した側のリードフレーム面と
半導体類を収納する側の板状成形品の合体面を
実質的に接触状態に配置せしめること
(4) 他の一方の板状成形品は合体用型内の窪みに
その合体面をリードフレームに対向させて配置
せしめること
が必要であり、更に
(5) 加熱終了後加熱体が撤去された後、2個の板
状成形品とリードフレームを合体せしめるため
に板状成形品圧着機が合体用型の窪み内に装着
されている事が必要である。 As mentioned above, in the present invention, before the lead frame is heated and pressurized into a plate-shaped molded product, (1) the lead frame is placed in a state in advance between the joining surfaces of the pair of joining molds ( 2) The contact mold surfaces of the merging molds that sandwich the lead frame are combined with the part of the merging mold that contacts the lead frame left open so that the periphery of the recess for storing the plate-shaped molded product is closed. A heating element introduction hole is formed on at least one side of the mold. (3) The surface of the lead frame on which semiconductors are mounted and the combined surface of the plate-shaped molded product on the side that houses semiconductors are substantially connected to each other. (4) The other plate-shaped molded product must be placed in the recess in the combination mold with its combined surface facing the lead frame, and (5) After heating is completed. After the heating element is removed, a plate-shaped molded product crimping machine must be installed in the recess of the combination mold in order to combine the two plate-shaped molded products and the lead frame.
前述の(1)及び(2)によりリードフレームが対をな
す合体型の合体面により挾まれ、板状成形品の周
辺が完全に閉じられた状態になつている為有害な
フラツシユの発生を阻止する上で顕著な効果を有
する。 Due to (1) and (2) above, the lead frame is sandwiched between the combined surfaces of the pair of combined types, and the periphery of the plate-shaped molded product is completely closed, preventing the occurrence of harmful flash. It has a remarkable effect on
即ち、リードフレームは合体用型の型面によつ
て表裏両面に密着固定されているため第3図に於
ける合体用型9,9′とリードフレーム4及び図
示はされていないがリードフレームのダムとによ
つて形成される意図したフラツシユ溜め14には
樹脂が流動するが型面とリード表裏面の間には流
動しえず有害なフラツシユを形成することが防止
できる。 That is, since the lead frame is closely fixed on both the front and back sides by the mold surfaces of the joining mold, the joining molds 9, 9' and lead frame 4 in FIG. Although the resin flows into the intended flash reservoir 14 formed by the dam, it cannot flow between the mold surface and the front and back surfaces of the lead, thereby preventing the formation of harmful flash.
更に好ましいことには前述のように本発明で使
用する板状成形品を構成する熱可塑性樹脂の流動
時の粘度は103〜104ポイズオーダーとエポキシ樹
脂に比べて格段に高く、リードフレーム自体の厚
みのバラツキや合体用型の加工精度および型の使
用にともなう摩耗や寸法の狂い等によりリードフ
レームと合体用型の型面間に微細な隙間が生じて
も有害なフラツシユを形成することを防ぐことが
可能となる。 More preferably, as mentioned above, the viscosity of the thermoplastic resin constituting the plate-shaped molded product used in the present invention during flow is on the order of 10 3 to 10 4 poise, which is much higher than that of epoxy resin, and the lead frame itself Even if a minute gap is created between the lead frame and the mold surface of the lead frame and the mold surface due to variations in the thickness of the lead frame, machining accuracy of the lead frame, wear due to the use of the mold, or deviations in dimensions, harmful flash may be formed. It is possible to prevent this.
本発明の最も大きい効果としては(3)により従来
行なわれていた板状体を軟化溶融後、合体部に半
導体を装着したリードフレームを移動させるかも
しくは合体部に固定されたリードフレームに向つ
て板状成形品を収容した合体型を一定距離移動さ
せる工程が不要になる為及び従来の方法では加熱
温度に比べて比較的低温度の雰囲気に対して開放
状態にある板状成形品やリードフレームの移動中
の温度低下がさけられなかつたのに対して本発明
に於いては、極く限られたほとんど閉鎖状態にあ
る空間での板状成形品の移動に限られ、しかも加
熱合体までに要する時間も加熱後の工程数の減少
により従来法に比べて短縮されるため板状成形品
の合計面の軟化溶融状態が意図した好適な合体条
件に近く維持されやすく信頼性の高い良好な封止
性を得る上で極めて大きい効果をもたらすもので
ある。 The greatest effect of the present invention is that (3), which was conventionally done by softening and melting the plate-shaped body, moves the lead frame with the semiconductor attached to the combined part, or moves it towards the lead frame fixed to the combined part. This eliminates the need for the process of moving the combined body containing the plate-shaped molded product a certain distance, and the process of moving the combined molded body containing the plate-shaped molded product a certain distance is no longer necessary, and the plate-shaped molded product and lead frame that are exposed to an atmosphere with a relatively low temperature compared to the heating temperature in conventional methods can be removed. In contrast, in the present invention, the movement of the plate-shaped molded product is limited to an extremely limited space that is almost closed, and furthermore, the temperature drop during the movement of the molded product is unavoidable. The time required is also shortened compared to conventional methods due to the reduction in the number of steps after heating, so the softened and molten state of the total surface of the plate-shaped molded product can be easily maintained close to the intended favorable coalescence conditions, resulting in highly reliable and good sealing. This has an extremely large effect on obtaining antistatic properties.
加熱の際重要なことは半導体類を装着した側の
リードフレーム面と半導体類を収納する側の板状
成形品の合体面が実質的に接触していなければな
らず、非接触状態でのリードフレーム側からの加
熱ではリードフレームの影に相当する部分の板状
成形品合体面がリードフレームにより加熱体から
遮蔽されるため、加熱による軟化溶融状態が不充
分となり信頼性の高い封止状態の確保が困難とな
る。 When heating, it is important that the surface of the lead frame on which the semiconductors are mounted and the combined surface of the plate-shaped molded product on the side that houses the semiconductors must be in substantial contact, so that the leads cannot be heated in a non-contact state. When heating from the frame side, the combined surface of the plate-shaped molded product corresponding to the shadow of the lead frame is shielded from the heating element by the lead frame, so the softening and melting state due to heating is insufficient, resulting in a highly reliable sealing state. It will be difficult to secure.
リードフレーム面と板状成形品を接触させた状
態でリードフレームを介して加熱することにより
リードフレームからの熱伝導により接触合体面が
充分に溶融し、最も密着性が必要とされるリード
フレームと板状成形品を形成する熱可塑性樹脂と
が強固に合体されることになる。 By heating through the lead frame while the lead frame surface and the plate-shaped molded product are in contact with each other, the contact joining surface is sufficiently melted by heat conduction from the lead frame, making it possible to form a lead frame that requires the most adhesion. The thermoplastic resin forming the plate-shaped molded product will be firmly combined with the thermoplastic resin.
この場合、リードの間隙等に対応するリードフ
レームの影とならない板状成形品の合体面は当然
のことながら加熱により充分な軟化溶融状態に達
し、次いで行なわれる加圧工程によつて充分な合
体強度が得られることになる。 In this case, the joining surface of the plate-shaped molded product that is not shadowed by the lead frame, which corresponds to the gap between the leads, naturally reaches a sufficiently softened and molten state by heating, and is then sufficiently joined by the pressurizing process. This will give you strength.
半導体類を装着した側のリードフレーム面とは
一般にタブ上にペレツトをとり付けた面をさし、
この場合加熱はペレツト装着面とは反対側のリー
ドフレーム面から行なわれるため加熱による半導
体類の損傷を防止することができる。 The side of the lead frame on which semiconductors are attached generally refers to the side on which the pellet is attached on the tab.
In this case, since heating is performed from the lead frame surface opposite to the pellet mounting surface, damage to the semiconductors due to heating can be prevented.
しかし、半導体類を装着した側のリードフレー
ム面とはこれに限られるものではなく、例えば第
4図に示したようにリードフレーム4の中でタブ
21がいわゆるオフセツトされているような場合
には図に示されたようにペレツト装着面のリード
フレーム側から、必要に応じて半導体類を加熱に
よる損傷から守るための遮蔽材を設けた加熱体に
より、加熱することもまた良好裏におこなわれ
る。 However, the surface of the lead frame on which the semiconductors are attached is not limited to this. For example, in the case where the tab 21 is offset in the lead frame 4 as shown in FIG. As shown in the figure, heating can also be carried out from the lead frame side of the pellet mounting surface using a heating element provided with a shielding material to protect the semiconductors from damage due to heating, if necessary.
本発明に用いる発熱体はその様式、構造等、特
に限定されるものではなく発熱体導入孔への出し
入れが容易でかつ短時間に板状成形品の合体面を
軟化溶融させうる能力を有するものでありさえす
れば良い。 The heating element used in the present invention is not particularly limited in its style, structure, etc., and must be one that can be easily inserted into and removed from the heating element introduction hole and has the ability to soften and melt the combined surface of the plate-shaped molded product in a short time. It is enough as long as it is.
特に間接加熱、例えば熱風による加熱や輻射加
熱等が好ましく使用することが出来る。 Particularly, indirect heating, such as heating with hot air or radiant heating, can be preferably used.
熱風加熱に於いては、加熱源を型外に置き第5
図に示すように熱風のみを熱風導入孔22より型
の窪み17′内に導入し熱風排出孔23より排出
することも可能であり、特に空間に制約のある場
合に好ましい加熱方式である。 In hot air heating, the heating source is placed outside the mold.
As shown in the figure, it is also possible to introduce only hot air into the cavity 17' of the mold through the hot air introduction hole 22 and discharge it through the hot air discharge hole 23, which is a preferred heating method especially when space is limited.
本発明に用いられる熱可塑性樹脂としてはそれ
ぞれの半導体類のパツケージに対する要求特性に
応じて種々の種類のものが用いられるが、高い耐
熱性(耐熱変形性及び耐熱劣化性)と低い透湿性
及び一定水準以上の電気、機械特性に加え更に一
定水準以上の成形性を有することが必要である。 Various types of thermoplastic resins are used in the present invention depending on the characteristics required for the package of each semiconductor type, but the thermoplastic resins have high heat resistance (heat deformation resistance and heat deterioration resistance), low moisture permeability, and constant In addition to electrical and mechanical properties that exceed standards, it is also necessary to have moldability that exceeds a certain level.
代表例としてはポリフエニレンオキサイドや、
ポリエーテルサルフオン、ポリスルフオン、フエ
ノキシ樹脂、ポリアセタール等のエーテル系樹
脂、ポリエチレンテレフタレート、ポリブチレン
テレフタレート、ポリアリレート等のエステル系
樹脂、ポリカーボネート等の炭酸エステル系樹
脂、ポリアミド系樹脂の中でも吸水率の低いグレ
ード、ポリフエニレンサルフアイド等の樹脂及び
これら樹脂の一部とガラス繊維を中心とした充填
剤との組み合わせ等をあげることが出来る。 Typical examples are polyphenylene oxide,
A grade with low water absorption among ether resins such as polyether sulfon, polysulfon, phenoxy resin, and polyacetal, ester resins such as polyethylene terephthalate, polybutylene terephthalate, and polyarylate, carbonate ester resins such as polycarbonate, and polyamide resins. Examples include resins such as polyphenylene sulfide, and combinations of some of these resins and fillers, mainly glass fibers.
また合体用型の材質としては熱伝導性及び耐久
性にすぐれた金属型が好ましいが、熱硬化性樹脂
に金属粉等を均質混合したいわゆる樹脂型も使用
可能である。 Further, as the material for the joining mold, a metal mold having excellent thermal conductivity and durability is preferable, but a so-called resin mold made by homogeneously mixing a thermosetting resin with metal powder or the like can also be used.
実施例
熱変形温度(ASTM D−648、18.6Kg/cm2荷
重)が260℃以上のポリフエニレンサルフアイド
樹脂を用いて第6図に示したような形状の、半導
体を収納する為の窪み5及び溶融樹脂の一部を収
容するための空隙24を有する2個1対の板状成
形品を射出成形により成形した。Example A recess for accommodating a semiconductor in the shape shown in Figure 6 using polyphenylene sulfide resin with a heat distortion temperature (ASTM D-648, 18.6 Kg/cm 2 load) of 260°C or higher. A pair of plate-shaped molded products each having a cavity 24 for accommodating a part of the melted resin and a part of the molten resin were molded by injection molding.
次いで該板状成形品と表面に銀鍍金をほどこし
た16ピンのDIP型のリードフレーム合体用型、及
び板状成形品圧着機を第3図の如き位置に配置さ
せた後合体用型の側壁にうがつた高さ10mm、巾
6.4mmの加熱体導入孔より熱風を上下に均質に吹
出す構造の電熱式熱風ヒータを挿入し、450℃±
5℃(吹出口近傍)の熱風を30/minの風量で
4秒間、半導体を収納した側の板状成形品に対し
ては半導体類を実装した側の反対側より板状成形
品と実質的に接触したリードフレームを介し、一
方他の板状成形品はそのまま合体面に吹きつけ
た。 Next, a mold for combining the plate-shaped molded product and a 16-pin DIP type lead frame whose surface is plated with silver, and a side wall of the mold for combining after placing the plate-shaped molded product crimping machine in the position as shown in Fig. 3. Height: 10mm, width
An electric hot air heater with a structure that uniformly blows hot air up and down from a 6.4mm heating element introduction hole is inserted, and the temperature is 450℃±.
Apply hot air at 5℃ (near the air outlet) at a flow rate of 30/min for 4 seconds to the plate-shaped molded product on the side housing the semiconductors from the side opposite to the side where the semiconductors are mounted. The other plate-shaped molded product was sprayed onto the combined surface through the lead frame that was in contact with the lead frame.
次いで熱風ヒータを発熱体導入孔より抜きとり
板状成形品圧着機により板状成形品をリードフレ
ームを挾んだ状態で50Kgの荷重をかけ合体した。
発熱体導入孔より熱風ヒーターを抜きとつてから
圧着までの所要時間は0.5秒で、2秒の冷却時間
を経て合体用型を開き合体品をとり出した。1000
個の合体品はいずれもリードフレームのダムと合
体用型の合体面およびリードによつて形成される
意図したフラツシユ溜めにフラツシユが形成され
たのみで、板状成形品の周辺に有害なフラツシユ
の発生は認められなかつた。 Next, the hot air heater was extracted from the heating element introduction hole, and the plate-shaped molded products were joined together with a lead frame sandwiched therebetween by applying a load of 50 kg using a plate-shaped molded product crimping machine.
The time required from removing the hot air heater from the heating element introduction hole to crimping was 0.5 seconds, and after a cooling time of 2 seconds, the combining mold was opened and the combined product was taken out. 1000
In all of these combined products, flash was only formed in the intended flash reservoir formed by the dam of the lead frame, the combined surface of the mold for combination, and the lead, and there was no harmful flash around the plate-shaped molded product. No occurrence was observed.
また、得られた合体品は5Kg/cm2、24時間の赤
色アルコール液加圧浸漬試験に於いても赤色物の
パツケージ内への浸入は認められず、1000時間の
85℃−85%相対湿度バイアス試験に於いても供試
全個数(500個)につき全て良好な特性を有する
ことが確認された。 In addition, the obtained combined product was immersed in a red alcohol solution under pressure for 24 hours at a pressure of 5Kg/cm 2 , and no red material was observed to enter the package.
In the 85°C-85% relative humidity bias test, it was confirmed that all the samples (500 pieces) had good characteristics.
以上詳述したように本発明によれば、次のよう
な効果が得られる。即ち、リードフレームが対を
なす合体型の合体面により挾まれ、板状成形品は
周辺が完全に閉じられた状態下に合体されるため
有害なフラツシユを撲滅することができ、また半
導体類を収納する側の板状成形品の合体側面をリ
ードフレームの面と接触させた状態でリードフレ
ームを介して加熱することにより板状成形品の合
体面を十分均質に軟化溶融させることができ、加
熱終了から加圧合体までに要する時間を極めて短
縮し、かつ加熱された合体面の温度の低下を極力
おさえることができるため強固な合体が保証さ
れ、信頼性の高い半導体類のパツケージが製造可
能となつた。 As detailed above, according to the present invention, the following effects can be obtained. In other words, the lead frame is sandwiched between the combined surfaces of the pair of combined types, and the plate-shaped molded products are combined with the periphery completely closed, making it possible to eliminate harmful flash and also to prevent semiconductors from being damaged. By heating the combined side surface of the plate-shaped molded product on the storage side through the lead frame while in contact with the surface of the lead frame, the combined surface of the plate-shaped molded product can be sufficiently homogeneously softened and melted. It is possible to extremely shorten the time required from completion to pressurization and to minimize the drop in temperature of the heated joining surfaces, ensuring strong joining and making it possible to manufacture highly reliable semiconductor packages. Summer.
第1図および第2図は従来提案の合体法を示す
断面図、第3図、第4図及び第5図は本発明に係
る合体法を示す断面図、第6図A及びBはそれぞ
れ熱可塑性樹脂板状成形品の断面及び平面図、第
7図は合体後の半導体パツケージの状態を示す斜
視図である。
符号の説明、1,1′……窪み付金型、2,
2′……溶融合体代、3,3′……板状成形品、4
……リードフレーム、5,5′……半導体収納窪
み、6……リードフレームの表面、7……リード
フレームの裏面、8,8′……仮想断面、9……
合体用型、10,10′……合体用型の型面、1
1,11′……板状成形品収容窪み、12,1
2′……板状成形品圧着機、13……ダム、14
……意図したフラツシユ溜め、15……半導体
類、16,16′……合体面、17,17′……窪
み、18……合体用型のリードフレームと接する
部分、19……加熱体導入孔、20……加熱体、
21……タブ、22……熱風導入孔、23……熱
風排出孔、24……空隙。
Figures 1 and 2 are cross-sectional views showing the conventionally proposed combining method, Figures 3, 4, and 5 are cross-sectional views showing the combining method according to the present invention, and Figures 6 A and B are respectively FIG. 7 is a cross-sectional and plan view of the plastic resin plate-shaped molded product, and a perspective view showing the state of the semiconductor package after being combined. Explanation of symbols, 1, 1'...Mold with depression, 2,
2'... Molten metal material, 3, 3'... Plate-shaped molded product, 4
...Lead frame, 5, 5'...Semiconductor storage recess, 6...Surface of lead frame, 7...Back surface of lead frame, 8, 8'...Virtual cross section, 9...
Mold for merging, 10, 10'... Mold surface of the merging mold, 1
1, 11'... Plate-shaped molded product storage recess, 12, 1
2'...Plate molded product crimping machine, 13...Dam, 14
... Intended flash reservoir, 15... Semiconductors, 16, 16'... Merging surface, 17, 17'... Recess, 18... Part in contact with the lead frame of the joining mold, 19... Heating body introduction hole , 20... heating element,
21...Tab, 22...Hot air introduction hole, 23...Hot air discharge hole, 24...Gap.
Claims (1)
窪みを有する2個の熱可塑性樹脂板状成形品が溶
融合体後にリードフレームの表裏両面とそれぞれ
接する面をそれぞれ同一平面内に含む仮想断面の
輪郭をリードフレーム面に平行な面の最大輪郭と
して有し、該輪郭と同一形状の窪みを少なくとも
リードフレーム表裏面とそれぞれ接する側に有す
る合体用型の該窪み内に前記熱可塑性樹脂板状成
形品をそれぞれ収容した状態で半導体類を装着し
たリードフレームを挾み加熱加圧させる半導体類
のパツケージ成形方法において、半導体類を収納
する側の熱可塑性樹脂板状成形品の合体側面をリ
ードフレームの面と接触させた状態で一方の合体
用型に配置するとともに、もう一方の合体用型の
側面に、リードフレームを挾持する部分を残して
合体用型内の窪みに貫通する加熱体導入孔を設
け、該加熱体導入孔より加熱体を合体用型内に導
入した状態で、該加熱体と接しないよう合体用型
窪み内にもう一方の熱可塑性樹脂板状成形品の合
体側面を配置し、半導体類を収納する側の熱可塑
性樹脂板状成形品はリードフレームを介し、また
もう一方の熱可塑性樹脂板状成形品は直接合体面
を加熱後、加熱体を合体用型から撤去し、次いで
合体用型の窪み内に装着された板状成形品圧着機
により熱可塑性樹脂板状成形品を対向加圧合体さ
せることを特徴とする半導体類のパツケージ成形
方法。1. Two thermoplastic resin plate-shaped molded products, at least one of which has a recess for accommodating a semiconductor, are molten and fused together to form a hypothetical cross-sectional outline that includes surfaces in contact with both the front and back surfaces of a lead frame, respectively, in the same plane. The thermoplastic resin plate-shaped molded product is placed in the recess of the combination mold, which has a maximum outline on a plane parallel to the lead frame surface and has recesses having the same shape as the outline on at least the sides in contact with the front and back surfaces of the lead frame. In a semiconductor package molding method in which a lead frame with semiconductors attached thereto is sandwiched and heated and pressurized, the combined side surface of the thermoplastic resin plate-shaped molded product on the side housing the semiconductors is aligned with the surface of the lead frame. The leads are placed in contact with each other in one of the merging molds, and a heating element introduction hole is provided on the side surface of the other merging mold to penetrate into the recess in the merging mold, leaving a portion for holding the lead frame. With the heating element introduced into the merging mold through the heating element introduction hole, the merging side surface of the other thermoplastic resin plate molded product is placed in the merging mold recess so as not to come into contact with the heating element, and the semiconductor After heating the joining surface of the thermoplastic resin plate-shaped molded product on the side that houses the items through the lead frame, and directly on the joining surface of the other thermoplastic resin plate-shaped molded product, the heating element is removed from the joining mold, and then the joining surface is heated. A method for molding packages for semiconductors, characterized in that thermoplastic resin plate-shaped molded products are joined together under opposing pressure by a plate-shaped molded product crimping machine installed in the recess of a mold.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP517680A JPS56101760A (en) | 1980-01-18 | 1980-01-18 | Formation of package of semiconductors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP517680A JPS56101760A (en) | 1980-01-18 | 1980-01-18 | Formation of package of semiconductors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56101760A JPS56101760A (en) | 1981-08-14 |
| JPS6138862B2 true JPS6138862B2 (en) | 1986-09-01 |
Family
ID=11603922
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP517680A Granted JPS56101760A (en) | 1980-01-18 | 1980-01-18 | Formation of package of semiconductors |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56101760A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4680617A (en) * | 1984-05-23 | 1987-07-14 | Ross Milton I | Encapsulated electronic circuit device, and method and apparatus for making same |
| US4872825A (en) * | 1984-05-23 | 1989-10-10 | Ross Milton I | Method and apparatus for making encapsulated electronic circuit devices |
-
1980
- 1980-01-18 JP JP517680A patent/JPS56101760A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56101760A (en) | 1981-08-14 |
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