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JPS6140897B2 - - Google Patents
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JPS6140897B2 - - Google Patents

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Publication number
JPS6140897B2
JPS6140897B2 JP56141498A JP14149881A JPS6140897B2 JP S6140897 B2 JPS6140897 B2 JP S6140897B2 JP 56141498 A JP56141498 A JP 56141498A JP 14149881 A JP14149881 A JP 14149881A JP S6140897 B2 JPS6140897 B2 JP S6140897B2
Authority
JP
Japan
Prior art keywords
copper
base material
nickel
solar heat
solution containing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56141498A
Other languages
Japanese (ja)
Other versions
JPS5843357A (en
Inventor
Seishiro Yamakawa
Masahiko Hatsushiro
Masaharu Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP56141498A priority Critical patent/JPS5843357A/en
Publication of JPS5843357A publication Critical patent/JPS5843357A/en
Publication of JPS6140897B2 publication Critical patent/JPS6140897B2/ja
Granted legal-status Critical Current

Links

Classifications

    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24HEATING; RANGES; VENTILATING
    • F24SSOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
    • F24S70/00Details of absorbing elements
    • F24S70/20Details of absorbing elements characterised by absorbing coatings; characterised by surface treatment for increasing absorption
    • F24S70/25Coatings made of metallic material
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24HEATING; RANGES; VENTILATING
    • F24SSOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
    • F24S70/00Details of absorbing elements
    • F24S70/20Details of absorbing elements characterised by absorbing coatings; characterised by surface treatment for increasing absorption
    • F24S70/225Details of absorbing elements characterised by absorbing coatings; characterised by surface treatment for increasing absorption for spectrally selective absorption
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/40Solar thermal energy, e.g. solar towers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Thermal Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electroplating Methods And Accessories (AREA)

Description

【発明の詳现な説明】[Detailed description of the invention]

この発明は、倪陜熱枩氎噚などに甚いられる倪
陜熱吞収䜓の補法に関するものである。 倪陜゚ネルギヌの吞収䜓ずしおは、可芖光域お
よび近赀倖領域の電磁波に察する吞収率が高く、
しかも赀倖領域での攟射率の䜎いものが芁求され
る。 埓来、倪陜゚ネルギヌを良奜に吞収し、か぀赀
倖領域での熱攟射が少ない被膜䞀般に遞択吞収
膜ず呌ばれるを衚面に圢成しおなる倪陜熱吞収
䜓が皮々考え出されおおり、このような遞択吞収
膜ずしおは酞化第銅CU2O被膜や酞化第
銅CUO被膜などの酞化銅被膜が広く知られ
おいる。 しかしながら、䞊蚘酞化銅からなる遞択吞収膜
を基材衚面に圢成した埓来の倪陜熱吞収䜓は、䞀
般に耐熱性が悪いため、たずえば䜿甚䞭、熱媒䜓
を導通させない状態で倪陜光に曝されるなどのた
め、ずきにより200℃もの高枩に達するこずがあ
り、劣化が起きる。そのため、近赀倖域波長
0.7〜2.5ミクロンでの吞収率が䜎䞋するほか、
䞋地の銅成分が酞化されお遞択吞収膜の膜厚が次
第に増加するため、赀倖領域における熱攟射が増
倧するずいうような問題が生ずるこずが倚か぀
た。 発明者らは、このような問題のうち、膜厚増加
の問題を解決するため、化孊的および熱的に安定
な金属基材の衚面に銅たたは銅合金からなる薄膜
局を圢成し、この薄膜局を酞化凊理するこずによ
぀お遞択吞収膜化を行なうこずを考え出した。銅
たたは銅合金の薄膜局の銅成分をすべお酞化させ
おおけば、䞋地が安定であるためもはや膜厚が増
加するこずがなく、赀倖領域における熱攟射も増
倧するこずがないからである。発明者らは、安定
な金属基材ずしお党䜓もしくは衚面のみがニツケ
ルからなる基材を甚いるこずずし、さらに性胜の
良い倪陜熱吞収䜓を埗るため研究を重ねた。その
過皋で、ニツケル衚面の埮现構造が倪陜熱の吞収
率を倧きくするこずを芋出し、そのような埮现構
造を効果的に぀くり埗る方法を探玢した結果、぀
いにこの発明に到達した。 この発明は、以䞊のような事情に鑑みなされた
もので、倪陜熱の吞収率が高く、か぀耐熱性にす
ぐれた倪陜熱吞収䜓を効果的に぀くり埗る補法を
提䟛するものである。これに぀いお以䞋に説明す
る。 この発明にかかる倪陜熱吞収䜓の補法は、少な
くずも衚面がニツケルでできた基材の衚面に、銅
むオンを含む酞性溶液を接觊させお、䞊蚘基材の
衚面を゚ツチングするず共にこの衚面に銅を析出
させ、そののち、基材衚面の銅メツキ局に察し酞
化凊理を行ない、酞化第銅の遞択吞収膜ずする
こずを特城ずする。 この補法においおは、金属基材ずしお、党䜓が
ニツケルたたは衚面にニツケル薄膜を持぀基材、
すなわち少なくずも衚面がニツケルでできた基材
を甚いる。ニツケル薄膜を持぀基材の芯材はどの
ようなものでもよいが、金属等の熱䌝導床の高い
ものが奜たしい。ニツケル薄膜は、メツキ法真
空蒞着法スパツタリング法などの方法を甚いお
圢成される。 䞊蚘ニツケル基材ニツケル薄膜を持぀基材も
含むに銅の無電解メツキを行ない、さらに化成
凊理を斜しお基材衚面の銅メツキ局を酞化第銅
からなる遞択吞収膜ずする。このように、この発
明は、遞択吞収膜ずなる銅もしくは銅合金の薄膜
局を銅の無電解メツキによ぀お぀くるずころに特
城がある。 銅メツキ工皋では、ニツケル基材を銅むオンを
含む酞性溶液に浞挬するなどしお、基材衚面に銅
むオンを含む酞性溶液を接觊させるようにする。 なお、その前に、ニツケル基材衚面に前凊理、
たずえば垌硝酞などの垌酞でニツケル衚面を掻性
化するなどしおおいおもよいこずは勿論である。 基材衚面に銅を含む酞性溶液が接觊するず、
NiずCuのむオン化傟向の差に基づき、ニツケル
衚面が溶け、埮现な凹凞構造ができる。粗面
化ずずもに、基材衚面に銅が析出しお、銅を䞻
成分ずする薄膜局ができる。 ここで甚いる銅むオンを含む酞性溶液ずしお
は、硫酞銅CuSO4硝酞銅CuNO32たた
は塩化銅CuCl2のうちの少なくずも皮の銅塩
を含み、か぀PHが1.0以䞋のものを甚いるのが最
も奜たしい。浞挬時間は、酞性溶液の性質等に応
じ、ニツケル衚面が充分粗面化されるよう適圓に
決める必芁がある。 このように、ニツケル基材衚面を粗面化しおお
けば、埗られる倪陜熱吞収䜓の光孊的特性に著し
い倉化を䞎え、性胜を向䞊させるのである。これ
を第図を甚いお説明する。 第図は、ニツケル基材ず、これに各皮の凊
理を斜しお埗た詊料の光孊的特性をあ
らわすグラフである。 ニツケル基材は次のようにしお぀くられたも
のである。芯材ずしお冷延鋌板を甚い、これに厚
みミクロン10-6m、以䞋「Ό」ず略すのニ
ツケルメツキを行な぀た。甚いたメツキ液の組成
を぀ぎに瀺す。 硫酞ニツケル 240g 塩化ニツケル 45g 硌 酾 30g サツカリン 0.5〜1.5g ホルマリン 〜c.c. 詊料は、ニツケル基材の衚面に、厚み0.18
Όの酞化第銅薄膜を圢成したものである。この
詊料は次のようにしお぀くられた。シアン化銅
を䞻成分ずするメツキ液を甚い、ニツケル基材
に厚み0.2Όの銅メツキを行な぀た。ここでは、
ニツケル基材の粗面化が行なわれない。さらに
亜塩玠酞ナトリりムNaClO240g氎酞化ナト
リりムNaOH90g氎1000gからなる化成凊理
液䞭に90℃で分間浞挬し、酞化凊理を行な぀
た。 詊料もニツケル基材の衚面に、厚み0.18ÎŒ
の酞化第銅薄膜を圢成したものであるが、この
堎合、ニツケル基材の衚面が粗面化された。す
なわち、ニツケル基材を硝酞垞枩に
分間浞挬しおその衚面を掻性化し、぀ぎに50g
の塩化銅を含む氎溶液PH1.0以䞋垞枩に
分間浞挬した。これによ぀お、厚み0.2Όの銅
薄膜を圢成し、その埌詊料ず同じようにしお酞
化凊理を行な぀た。 詊料は぀ぎのようにしお぀くられたものであ
る。すなわち、詊料を重量塩酞垞枩䞭
に分間浞挬しお、ニツケル基材衚面の酞化第
銅を溶解させ取り陀いた。ここでは、溶出した
酞化第銅が再び銅ずしお基材衚面に再析出しな
いように泚意し、あたり浞挬時間が長くならない
ようにした。 詊料は、ニツケル基材ず同様にニツケル衚
面を持぀ものであるが、ニツケル基材に比べ倪
陜熱吞収域での吞収率が非垞に高い。これは、ニ
ツケル衚面が銅メツキの際に粗面化されたためで
ある。 このような粗面化ニツケル衚面を䞋地ずしお持
぀詊料は、粗面化されないニツケル衚面を䞋地
ずしお持぀詊料に比べお倪陜熱吞収率がきわめ
お高い。このように、ニツケル基材衚面が粗面化
されお、埮现な凹凞を持぀ようになるず、倪陜熱
吞収䜓の吞収率が高くなるのである。 銅を䞻成分ずする薄膜局の酞化凊理は、぀ぎの
ような化成凊理で行なうのがよい。すなわち、こ
の酞化凊理甚化成凊理液は、酞化剀ずアルカリ添
加剀ずの混合氎溶液、たたはこの混合氎溶液に銅
むオンを添加したものであり、酞化剀ずしおは、
亜塩玠酞ナトリりムNaClO2次亜塩玠酞ナト
リりムNaClO過硫酞カリりムK2S2O8
過硫酞ナトリりムNa2S2O8過硫酞アンモニ
りム〔NH42S2O8〕などの亜塩玠酞塩次亜塩玠
酞塩たたは過硫酞塩が甚いられ、アルカリ添加剀
ずしおは氎酞化ナトリりムNaOH氎酞化カ
リりムKOHなどが甚いられる。酞化剀ずし
おNaClO2を、たたアルカリ添加剀ずしおNaOH
を甚いるのが実甚的に最もすぐれおいる。化成凊
理液䞭の酞化剀ずアルカリ添加剀の含有量は、氎
1000gに察する添加量をアルカリ添加剀xg、酞化
剀ygずするず、぀ぎの匏を同時に満足するよ
うな量ずする。 ≊125 ≧15 ≊− 化成凊理液䞭の銅むオン濃床は500ppm以䞋ず
するのが効果的である。銅むオンを必ずしも含た
せる必芁はないが、䞊蚘濃床範囲の銅むオンの存
圚により、CuO遞択吞収膜の光孊的特性が向䞊
するこずが実隓的に確かめられた。化成凊理液䞭
ぞの銅むオンの添加方法は自由であ぀た。たずえ
ば硫酞銅CuSO4硝酞銅CuNO32塩
化銅CuCl2など銅塩の氎溶液を埮量添加する
ずいう方法によ぀おもよく、たた金属銅を化成凊
理液䞭に浞挬し、この液で凊理するこずによ぀お
銅むオンを増加させるずいう方法によ぀おもよ
い。 このような化成凊理液を甚いお酞化凊理を斜せ
ば、前蚘銅たたは銅合金からなる薄膜局は、長埄
方向の長さも぀ずも長い郚分の長さがほが
0.6〜2.0Όの、おおよそ繊維状ないし葉状を呈す
る酞化第銅結晶からなる遞択吞収膜ずなる。繊
維状ないし葉状の結晶は、䞀぀の繊維状ないし葉
状結晶から別の繊維状ないし葉状結晶が成長する
こずもある。したが぀お、そのような堎合には、
長埄方向長さは、個々の結晶でみるこずになる。 このような結晶の長埄方向長さを持぀遞択吞収
膜は吞収率が倧きい。その理由は次のずおりであ
る。酞化第銅結晶からなる遞択吞収膜では䞀般
に、0.7Ό以䞊の波長のいわゆる近赀倖領域での
吞収率が䜎䞋するが、この䜎䞋の床合いは遞択吞
収膜の膜厚や埮小構造によ぀お倧きく圱響され、
結晶の長埄方向長さが0.6Ό以䞊のものが最も䜎
䞋が少ない。これは、近赀倖領域波長0.7〜2.5
Όの光に察し、䞊蚘結晶の長さが0.3Ό以䞋で
あれば幟䜕孊的に平らな面ずなるが、0.6Ό以䞊
であれば倚重反射を起こしお吞収率が向䞊するた
めであろうず考えられる。なお、実隓の結果で
は、䞊蚘結晶長が0.6〜2.0Όの範囲においおは、
それ以䞊吞収率が向䞊するこずはなか぀た。遞択
吞収膜䞭に銅Cuたたは酞化第銅Cu2O
が残留するず、䜿甚䞭に劣化するので、䞊蚘酞化
凊理は充分に行なう必芁がある。しかし、埮量残
留したずしおも倧きな圱響はない。 CuO局にCu2Oが存圚しおいた堎合に぀いお述
べるず、この堎合には初期特性は非垞に良い。
Cu2Oが存圚するず、近赀倖域での吞収率が高く
なるからである。しかし、熱150〜200℃を受
けるず、このCu2OはCuOに倉化しお、このずき
には繊維状もしくは葉状でなく粒状の結晶にな
り、劣化が激しくなる。そのため、最初から繊維
状もしくは葉状のCuOのみからなる堎合に比
し、結局、近赀倖域での吞収率が悪くなる。
CuO局䞭にCuが残぀おいるず、近赀倖域での吞
収率の䜎䞋が起きるこずは勿論、膜厚増により攟
射率の増倧も起きる。 遞択吞収膜の厚みは、0.03〜1.0Όずするのが
奜たしい。この膜厚は、通垞、電解環元法などに
よ぀お偎定されるため、空隙ないし凹凞のない平
らな局の厚みに換算しおあらわしたものである。
遞択吞収膜の厚みが0.03Ό未満であれば、倪陜熱
の吞収率が小さくなる。逆に1.0Όよりも厚くす
るず攟射率が倧きくなり、黒色ペむントず同じよ
うになり、総合的にみお吞収効率が䜎䞋する。 ぀ぎに、この発明の実斜䟋および比范䟋に぀い
お説明する。 〔実斜䟋および比范䟋〕 冷延鋌板衚面に、NiSO4・7H2O 300g
NiCl2・6H2O 50gH3BO3 50gを含むワ
ツト济を甚い、電流密床3Adm2メツキ時間
15分の条件でニツケルメツキを斜し、厚みΌの
ニツケルメツキ局を圢成した。 ぀ぎに、このニツケルメツキされた基材を5wt
−HNO3垞枩に分間浞挬しお掻性化し、
第衚の条件でそれぞれ、ニツケルメツキ局の衚
面に銅メツキ局を圢成した。この際、比范䟋で
はニツケル衚面が粗面化されおいず、たた比范䟋
でも粗面化がなされなか぀た。その埌、埗られ
た銅メツキ基材を、NaClO2 70gNaOH 90g
æ°Ž1000gからなる液枩95℃の化成凊理液に10分間
浞挬しお酞化凊理を行ない、第衚に瀺すよう
な、酞化第銅CuOからなる遞択吞収膜を
基材衚面にそなえた倪陜熱吞収䜓を埗た。各倪陜
熱吞収䜓の光孊的特性は第衚に瀺す通りであ぀
た。
The present invention relates to a method for manufacturing a solar heat absorber used in solar water heaters and the like. As an absorber of solar energy, it has a high absorption rate for electromagnetic waves in the visible light region and near-infrared region.
Moreover, it is required to have low emissivity in the infrared region. Conventionally, various solar heat absorbers have been devised that have coatings on their surfaces that absorb solar energy well and emit little heat in the infrared region (generally called selective absorption coatings). As a selective absorption film, a cuprous oxide (CU 2 O) film or a cupric oxide film is used.
Copper oxide coatings such as copper (CUO) coatings are widely known. However, conventional solar heat absorbers in which a selective absorption film made of copper oxide is formed on the surface of a base material generally have poor heat resistance, so that they may be exposed to sunlight without conducting a heat medium during use. As a result, temperatures can sometimes reach temperatures as high as 200°C, causing deterioration. Therefore, near-infrared region (wavelength
0.7 to 2.5 microns), the absorption rate decreases, and
Since the underlying copper component is oxidized and the thickness of the selective absorption film gradually increases, problems such as increased heat radiation in the infrared region often occur. Among these problems, in order to solve the problem of increased film thickness, the inventors formed a thin film layer of copper or copper alloy on the surface of a chemically and thermally stable metal base material. We devised a method of forming a selective absorption film by oxidizing the layer. This is because if all the copper components in the copper or copper alloy thin film layer are oxidized, the underlying layer is stable, so the film thickness will no longer increase, and heat radiation in the infrared region will not increase. The inventors decided to use a base material whose entire or only surface is made of nickel as a stable metal base material, and conducted repeated research to obtain a solar heat absorber with even better performance. In the process, they discovered that the fine structure of the nickel surface increases the absorption rate of solar heat, and as a result of searching for a method to effectively create such a fine structure, they finally arrived at this invention. This invention was made in view of the above circumstances, and provides a manufacturing method that can effectively produce a solar heat absorber that has a high solar heat absorption rate and excellent heat resistance. This will be explained below. The method for manufacturing a solar heat absorber according to the present invention includes etching the surface of the base material and depositing copper on the surface by contacting an acidic solution containing copper ions with at least the surface of a base material made of nickel. After that, the copper plating layer on the surface of the base material is subjected to an oxidation treatment to form a selective absorption film of cupric oxide. In this manufacturing method, the metal substrate is made entirely of nickel or has a thin nickel film on its surface;
That is, a base material whose at least the surface is made of nickel is used. The core material of the base material having the nickel thin film may be any material, but it is preferably a material with high thermal conductivity such as metal. The nickel thin film is formed using methods such as plating, vacuum evaporation, and sputtering. The above-mentioned nickel base material (including a base material having a nickel thin film) is electrolessly plated with copper and further subjected to a chemical conversion treatment to form the copper plating layer on the surface of the base material into a selective absorption film made of cupric oxide. As described above, the present invention is characterized in that the thin film layer of copper or copper alloy, which becomes the selective absorption film, is formed by electroless plating of copper. In the copper plating step, the nickel base material is immersed in an acidic solution containing copper ions to bring the surface of the base material into contact with the acidic solution containing copper ions. Before that, the surface of the nickel base material is pretreated.
Of course, the nickel surface may be activated with a dilute acid such as dilute nitric acid. When an acidic solution containing copper comes into contact with the surface of the base material,
Based on the difference in ionization tendency between Ni and Cu, the nickel surface melts, forming a fine uneven structure. Along with this (roughening), copper is deposited on the surface of the base material, forming a thin film layer containing copper as the main component. The acidic solution containing copper ions used here includes at least one copper salt selected from copper sulfate CuSO 4 , copper nitrate Cu(NO 3 ) 2 or copper chloride CuCl 2 and has a pH of 1.0 or less. Most preferably, it is used. The immersion time must be appropriately determined depending on the properties of the acidic solution, etc. so that the nickel surface is sufficiently roughened. In this way, by roughening the surface of the nickel base material, the optical properties of the resulting solar heat absorber are significantly changed and its performance is improved. This will be explained using FIG. FIG. 1 is a graph showing the optical characteristics of nickel base material C and samples A, B, and D obtained by subjecting it to various treatments. Nickel base material C was made as follows. A cold-rolled steel plate was used as the core material, and nickel plating was applied to the core material to a thickness of 5 microns (10 -6 m, hereinafter abbreviated as "Ό"). The composition of the plating solution used is shown below. Nickel sulfate 240g / Nickel chloride 45g / Boric acid 30g / Satucharin 0.5-1.5g / Formalin 1-2 c.c. / Sample D was coated on the surface of nickel base material C with a thickness of 0.18
A cupric oxide thin film of Ό is formed. This sample D was made as follows. Using a plating solution containing copper cyanide as the main component, nickel base material C
Copper plating was applied to a thickness of 0.2Ό. here,
The surface of the nickel base material C is not roughened. Further, oxidation treatment was carried out by immersing it at 90° C. for 5 minutes in a chemical conversion treatment solution consisting of 40 g of sodium chlorite (NaClO 2 ), 90 g of sodium hydroxide (NaOH), and 1000 g of water. Sample B also has a thickness of 0.18Ό on the surface of nickel base material C.
In this case, the surface of the nickel base material C was roughened. In other words, nickel base material C is diluted with 5% nitric acid (at room temperature) for 1
Activate the surface by soaking for a minute, then add 50g/
The sample was immersed in an aqueous solution containing copper chloride (pH 1.0 or less, room temperature) for 5 minutes. In this way, a copper thin film with a thickness of 0.2 ÎŒm was formed, and then oxidation treatment was performed in the same manner as Sample D. Sample A was prepared as follows. That is, sample B was immersed in 5% by weight hydrochloric acid (at room temperature) for 1 minute to dissolve and remove cupric oxide on the surface of nickel base material C. Here, care was taken to prevent the eluted cupric oxide from re-precipitating as copper on the surface of the substrate, and the immersion time was not made too long. Sample A has a nickel surface like nickel base material C, but has a much higher absorption rate in the solar heat absorption region than nickel base material C. This is because the nickel surface was roughened during copper plating. Sample B, which has such a roughened nickel surface as its base, has a much higher solar heat absorption rate than sample D, which has a non-roughened nickel surface as its base. In this way, when the surface of the nickel base material is roughened and has fine irregularities, the absorption rate of the solar heat absorber increases. The oxidation treatment of the thin film layer containing copper as a main component is preferably carried out by the following chemical conversion treatment. That is, this chemical conversion treatment liquid for oxidation treatment is a mixed aqueous solution of an oxidizing agent and an alkaline additive, or a mixed aqueous solution to which copper ions are added, and as the oxidizing agent,
Sodium chlorite (NaClO 2 ), sodium hypochlorite (NaClO), potassium persulfate (K 2 S 2 O 8 ),
Chlorites, hypochlorites, or persulfates such as sodium persulfate (Na 2 S 2 O 8 ) and ammonium persulfate [(NH 4 ) 2 S 2 O 8 ] are used, and as alkaline additives, Sodium hydroxide (NaOH), potassium hydroxide (KOH), etc. are used. NaClO2 as oxidizing agent and NaOH as alkaline additive
It is practically best to use The content of oxidizing agent and alkaline additive in the chemical treatment solution is
Assuming that the amounts added to 1000g are xg of the alkaline additive and yg of the oxidizing agent, the amounts should be such that they simultaneously satisfy the following three equations. x≩125 y≧15 y≩25/24x-5 It is effective to set the copper ion concentration in the chemical conversion treatment liquid to 500 ppm or less. Although it is not necessarily necessary to include copper ions, it has been experimentally confirmed that the presence of copper ions in the above concentration range improves the optical properties of the CuO selective absorption film. The method of adding copper ions to the chemical conversion treatment solution was free. For example, it may be possible to add a trace amount of an aqueous solution of copper salt such as copper sulfate (CuSO 4 ), copper nitrate (Cu(NO 3 ) 2 ), or copper chloride (CuCl 2 ), or by adding metallic copper to the chemical conversion treatment solution. Alternatively, the copper ions may be increased by immersing the material in water and treating it with this solution. If oxidation treatment is performed using such a chemical conversion treatment solution, the thin film layer made of copper or copper alloy will have a length in the long axis direction (the length of the longest part) of approximately
The selective absorption film is made of cupric oxide crystals having a diameter of 0.6 to 2.0 ÎŒm and approximately fibrous or leaf-like. Regarding fibrous or foliar crystals, other fibrous or foliar crystals may grow from one fibrous or foliar crystal. Therefore, in such a case,
The length in the major axis direction is determined for each individual crystal. A selective absorption film having such a length in the long axis direction of the crystal has a high absorption rate. The reason is as follows. In general, a selective absorption film made of cupric oxide crystals has a reduced absorption rate in the so-called near-infrared region with a wavelength of 0.7Ό or more, but the degree of this reduction depends on the thickness and microstructure of the selective absorption film. greatly influenced,
The decrease is the least when the length of the crystal in the major axis direction is 0.6Ό or more. This is in the near-infrared region (wavelength 0.7 to 2.5
If the length of the crystal is 0.3Ό or less, it will be a geometrically flat surface, but if it is 0.6Ό or more, multiple reflections will occur and the absorption rate will improve. Conceivable. In addition, according to the experimental results, when the crystal length is in the range of 0.6 to 2.0Ό,
The absorption rate did not improve any further. Copper (Cu) or cuprous oxide (Cu 2 O) in the selective absorption film
If it remains, it will deteriorate during use, so the above oxidation treatment must be carried out sufficiently. However, even if a small amount remains, it will not have a major effect. Regarding the case where Cu 2 O is present in the CuO layer, the initial characteristics are very good in this case.
This is because the presence of Cu 2 O increases the absorption rate in the near-infrared region. However, when subjected to heat (150 to 200°C), this Cu 2 O changes to CuO, and in this case, it becomes granular crystals instead of fibrous or leaf-like, and the deterioration becomes severe. Therefore, the absorption rate in the near-infrared region ends up being worse than when it is made of only fibrous or leaf-like CuO from the beginning.
If Cu remains in the CuO layer, not only the absorption rate in the near-infrared region will decrease, but also the emissivity will increase due to the increase in film thickness. The thickness of the selective absorption membrane is preferably 0.03 to 1.0Ό. Since this film thickness is usually determined by the electrolytic cyclic method, it is expressed in terms of the thickness of a flat layer without voids or irregularities.
If the thickness of the selective absorption film is less than 0.03Ό, the absorption rate of solar heat will be small. On the other hand, if it is thicker than 1.0Ό, the emissivity will increase, similar to black paint, and the overall absorption efficiency will decrease. Next, examples and comparative examples of the present invention will be described. [Example and Comparative Example] 300 g of NiSO 4 7H 2 O/,
Using a Watts bath containing NiCl 2 6H 2 O 50g/, H 3 BO 3 50g/, current density 3A/dm 2 , plating time
Nickel plating was applied for 15 minutes to form a nickel plating layer with a thickness of 5 ÎŒm. Next, 5wt of this nickel-plated base material
Activated by immersing in %-HNO 3 (room temperature) for 1 minute,
A copper plating layer was formed on the surface of the nickel plating layer under the conditions shown in Table 1. At this time, the nickel surface was not roughened in Comparative Example 1, and was not roughened in Comparative Example 2 as well. After that, the obtained copper plating base material was treated with 70g of NaClO 2 , 90g of NaOH,
The substrate was oxidized by immersion in a chemical conversion solution containing 1000 g of water at a temperature of 95°C for 10 minutes, and a selective absorption film made of cupric oxide (CuO) as shown in Table 2 was provided on the surface of the substrate. Obtained a solar heat absorber. The optical properties of each solar heat absorber were as shown in Table 3.

【衚】【table】

【衚】【table】

【衚】【table】

【衚】 (泚) 厚みの詊隓方法は埌蚘
[Table] (Note) The thickness test method is described later.

【衚】 (泚) 吞収率、攟射率の詊隓方法は埌蚘
第衚からもわかるように、実斜䟋はいずれ
も、比范䟋に比べ初期特性での吞収率が高い。た
た、耐熱性にすぐれおいるため、高吞収率を保
ち、その劣化が芋られない。 以䞊の説明から明らかなように、この発明にか
かる倪陜熱吞収䜓の補法によれば、倪陜熱の吞収
効率が良奜で、耐熱性にすぐれた倪陜熱吞収䜓を
うたく補造するこずができるのである。 第衚第衚の詊隓方法は次のずおりであ
る。 詊隓方法 銅メツキ厚䞭倮補䜜所補電解匏膜厚偎定噚を
䜿甚した。 CuO膜厚定電流環元法を甚いた。 結晶長CuO圢成初期CuO結晶がただらな
ずきに電子顕埮鏡写真により長埄方
向の長さを枬定した。CuO結晶は、
時間湿床に関係なく、化成凊理液の
組成により定たるので、この方法によ
぀およい。 ∫ は倪陜光のスペクトル領域が0.3〜2
.5
Όに95存圚するこずに基づく ここでα吞収率倪陜党゚ネルギヌに察す
る α〓波長λでの吞収率 〓倪陜光の波長λの攟射匷床 ここでε攟射率黒䜓攟射党゚ネルギヌに察
する 〓T150150℃の黒䜓からの波長λの
攟射匷床 ε〓波長λの攟射率黒䜓に察する なお、赀倖分光光床蚈で赀倖域の反射率〓を
枬定し、ε〓−λずした。
[Table] (Note) The test methods for absorption rate and emissivity are described later.As can be seen from Table 3, all of the examples have higher absorption rates in their initial characteristics than the comparative examples. In addition, because it has excellent heat resistance, it maintains a high absorption rate and does not show any deterioration. As is clear from the above description, according to the method for manufacturing a solar heat absorber according to the present invention, it is possible to successfully produce a solar heat absorber with good solar heat absorption efficiency and excellent heat resistance. The test methods in Tables 2 and 3 are as follows. (Test method) Copper plating thickness: An electrolytic film thickness gauge manufactured by Chuo Seisakusho was used. CuO film thickness: Constant current ring method was used. Crystal length: At the early stage of CuO formation (when CuO crystals are mottled), the length in the major axis direction was measured using an electron micrograph. CuO crystal is
This method may be used because it is determined by the composition of the chemical conversion treatment liquid regardless of time and humidity. (∫ 2.5 0.3 means that the spectral range of sunlight is 0.3 to 2
.Five
Based on 95% presence in ÎŒ) where α: Absorption rate (relative to total solar energy) α〓: Absorption rate at wavelength λ I〓: Radiation intensity at wavelength λ of sunlight Here, ε: Emissivity (relative to the total energy of black body radiation) S〓 T = 150; Radiation intensity at wavelength λ from a black body at 150℃ ε = Emissivity at wavelength λ (relative to black body) In addition, infrared spectroscopy The reflectance P〓 in the infrared region was measured with a photometer, and it was set as ε〓=1−Pλ.

【図面の簡単な説明】[Brief explanation of the drawing]

第図は、ニツケル基材の衚面状態が光孊的特
性に及がす圱響を説明するためのグラフである。
FIG. 1 is a graph for explaining the influence of the surface condition of a nickel base material on optical properties.

Claims (1)

【特蚱請求の範囲】  少なくずも衚面がニツケルでできた基材の衚
面に、銅むオンを含む酞性溶液を接觊させお、䞊
蚘基材の衚面を゚ツチングするず共にこの衚面に
銅を析出させ、そののち、基材衚面の銅メツキ局
に察し酞化凊理を行ない、酞化第銅の遞択吞収
膜ずするこずを特城ずする倪陜熱吞収䜓の補法。  銅むオンを含む酞性溶液が、硫酞銅硝酞
銅および塩化銅の䞭から遞ばれた少なくずも
皮の銅塩を含み、か぀PHが1.0以䞋のものであ
る特蚱請求の範囲第項蚘茉の倪陜熱吞収䜓の補
法。  銅メツキ局に察する酞化凊理が、化成凊理液
ずしお、亜塩玠酞塩次亜塩玠酞塩および過硫酞
塩の䞭から遞ばれた塩からなる酞化剀、氎酞化ナ
トリりムおよび氎酞化カリりムの䞭から遞ばれた
氎酞化物からなるアルカリ添加剀および〜
500ppmの銅むオンを含み、か぀氎1000gに察す
るアルカリ添加剀の添加量をxg、酞化剀の添加
量をygずするず、これらが䞋蚘の匏を
同時に満足する範囲内にある氎溶液を甚いお行な
われる特蚱請求の範囲第項たたは第項蚘茉の
倪陜熱吞収䜓の補法。 ≊125 ≧15 ≊−
[Claims] 1. An acidic solution containing copper ions is brought into contact with the surface of a base material at least the surface of which is made of nickel, etching the surface of the base material and depositing copper on this surface, and then . A method for producing a solar heat absorber, characterized in that a copper plating layer on the surface of a base material is subjected to oxidation treatment to form a selective absorption film of cupric oxide. 2. The acidic solution containing copper ions contains at least one copper salt selected from copper sulfate, copper nitrate, and copper chloride, and has a pH of 1.0 or less. Manufacturing method for solar heat absorbers. 3 Oxidation treatment for the copper plating layer is carried out using an oxidizing agent consisting of a salt selected from chlorite, hypochlorite and persulfate, sodium hydroxide and potassium hydroxide as a chemical conversion treatment liquid. Alkaline additives consisting of selected hydroxides and 0-
Use an aqueous solution that contains 500 ppm of copper ions, and where x and y are within a range that simultaneously satisfies the following three formulas, where xg is the amount of alkaline additive added and yg is the amount of oxidizing agent added to 1000 g of water. A method for manufacturing a solar heat absorber according to claim 1 or 2. x≩125 y≧15 y≩25/24x-5
JP56141498A 1981-09-07 1981-09-07 Manufacture of solar heat absorber Granted JPS5843357A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56141498A JPS5843357A (en) 1981-09-07 1981-09-07 Manufacture of solar heat absorber

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56141498A JPS5843357A (en) 1981-09-07 1981-09-07 Manufacture of solar heat absorber

Publications (2)

Publication Number Publication Date
JPS5843357A JPS5843357A (en) 1983-03-14
JPS6140897B2 true JPS6140897B2 (en) 1986-09-11

Family

ID=15293333

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56141498A Granted JPS5843357A (en) 1981-09-07 1981-09-07 Manufacture of solar heat absorber

Country Status (1)

Country Link
JP (1) JPS5843357A (en)

Also Published As

Publication number Publication date
JPS5843357A (en) 1983-03-14

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