JPS6141120B2 - - Google Patents
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- Publication number
- JPS6141120B2 JPS6141120B2 JP15188881A JP15188881A JPS6141120B2 JP S6141120 B2 JPS6141120 B2 JP S6141120B2 JP 15188881 A JP15188881 A JP 15188881A JP 15188881 A JP15188881 A JP 15188881A JP S6141120 B2 JPS6141120 B2 JP S6141120B2
- Authority
- JP
- Japan
- Prior art keywords
- outer cylinder
- conductors
- drift
- electric field
- support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- Particle Accelerators (AREA)
Description
【発明の詳細な説明】 本発明はイオン線形加速器に係るものである。[Detailed description of the invention] The present invention relates to an ion linear accelerator.
イオン線形加速器の極板に高周波電圧を印加す
ると、極板間の残留ガス中の電子が加速されて正
極となつている一方の極板を叩いて2次電子を発
生させ、この2次電子が更に高周波電界で加速さ
れてそのとき正極となつている他方の極板を叩い
て更に2次電子を発生させ、これを繰返してイオ
ン加速器内で電子が雪崩的に増加する(マルチパ
クタリング現象)。その結果加速器の高周波発振
器は過負荷となりその動作は阻害され、イオン加
速器の起動は困難となる。マルチパクタリング現
象の発生を阻止しながらイオン加速器を起動し安
定な運転状態に移行させるため、高周波発振器の
出力管を短時間小電力で励振しては電極表面に付
着している異物を電子で叩き出し、排気を一定時
間行なつて異物を排除する。これを繰返すことに
より電極面の吸着物の減少を待ち、励振電力を徐
徐に増加させる。この方法では連転者の適確な判
断と忍耐が必要とされる。作業は数時間から数日
を要する。又別の手段としては電極間電圧を大き
くして電子の走行速度を高周波電圧の変化速度よ
りも早くすることによつて増倍条件が成立しない
ようにする。しかし高電圧の印加は放電を発生さ
せ電力管を破壊する恐れがあるから短時間に電圧
を引き下げねばならず、そのための高速制御回路
を必要とする。 When a high-frequency voltage is applied to the plates of an ion linear accelerator, electrons in the residual gas between the plates are accelerated and hit one of the plates, which is the positive electrode, to generate secondary electrons. Furthermore, they are accelerated by a high-frequency electric field and hit the other plate, which is now the positive electrode, to generate more secondary electrons, and this process is repeated, causing an avalanche of electrons to increase in the ion accelerator (multipactoring phenomenon). . As a result, the high-frequency oscillator of the accelerator becomes overloaded and its operation is inhibited, making it difficult to start the ion accelerator. In order to start the ion accelerator and transition to a stable operating state while preventing the occurrence of multipactoring, the output tube of the high-frequency oscillator is excited with low power for a short period of time to remove foreign particles attached to the electrode surface with electrons. The foreign matter is removed by tapping and exhausting for a certain period of time. By repeating this, the excitation power is gradually increased after waiting for the adsorbed matter on the electrode surface to decrease. This method requires good judgment and patience on the part of the repeater. The work takes from several hours to several days. Another method is to increase the voltage between the electrodes so that the traveling speed of electrons is faster than the rate of change of the high-frequency voltage so that the multiplication condition does not hold. However, since applying a high voltage may cause discharge and destroy the power tube, the voltage must be lowered in a short period of time, and a high-speed control circuit is required for this purpose.
本発明は上記のような従来技術の欠点を解消
し、マルチパクタリング現象を抑制して加速器の
起動を確実容易にするイオン線形加速器の構造を
提供することである。 An object of the present invention is to provide a structure of an ion linear accelerator that eliminates the above-mentioned drawbacks of the prior art, suppresses the multipactoring phenomenon, and ensures and facilitates the start-up of the accelerator.
すなわち本発明はイオン線形加速器の電極間又
は電極と外筒間に直流電圧を加えられるような構
成とし、それにより高周波電圧による電子の電極
間の往復運動の速度を往路と復路で異なるように
して増倍条件を成立しないようにし、迅速起動と
安定運転を保証するようにしたものである。 That is, the present invention has a configuration in which a DC voltage can be applied between the electrodes of the ion linear accelerator or between the electrodes and the outer cylinder, and thereby the speed of the reciprocating movement of electrons between the electrodes due to the high-frequency voltage is made different between the forward and return paths. This ensures that the multiplication condition does not hold true and ensures quick start-up and stable operation.
第1,2図を参照して双チヤンネルイオン加速
器に本発明を適用した第1の実施例を説明する。 A first embodiment in which the present invention is applied to a dual channel ion accelerator will be described with reference to FIGS. 1 and 2.
外筒1内に、ドリフトチユーブD1―D5を植設
した一対の平行導体2,3がのびている。これら
の平行導体2,3を外筒1内に支持導体30が支
持している。可動短絡板6が支持導体30を上下
動できるように取付けられている。これらの支持
導体は外筒1から絶縁体4により絶縁され、そし
て支持体の一方と外筒1との間に直流バイアス電
圧源5がスイツチSを介して接続されている。短
絡板6と外筒内面との間には隙間があり、直流的
には絶縁状態にあるが、短絡板6と支持導体30
とは直流的に接続状態にある。このため平行導体
3にステム31,32,33を介して植設された
ドリフトチユーブD1,D3,D5と、平行導体2に
ステム(第2図にその1つのステム22がみえ
る)を介して植設されたドリフトチユーブとは同
電位であり、この実施例では正電位となつてい
る。外筒1にステム11,11′,12等により
前記のドリフトチユーブと交互に配置されたドリ
フトチユーブd1,d2などは外筒1と同電位であ
り、この実施例では負電位となつている。このた
め2つの加速チヤンネルの各々の隣接ドリフトチ
ユーブ間に直流電界が確立され、それにより起動
時の残存電子が高周波電界で加速されても往路と
復路の速度が異なり、結局電子の雪崩的増倍は阻
止される。起動後もスイツチSを閉じることによ
り運転中の偶発的停止に続く起動によるマルチパ
クタリング現象の発生は阻止され、安定運転が保
証される。 A pair of parallel conductors 2 and 3 with drift tubes D 1 to D 5 extending therein extend inside the outer cylinder 1 . A support conductor 30 supports these parallel conductors 2 and 3 within the outer cylinder 1. A movable shorting plate 6 is attached so that the support conductor 30 can be moved up and down. These support conductors are insulated from the outer cylinder 1 by an insulator 4, and a DC bias voltage source 5 is connected between one of the supports and the outer cylinder 1 via a switch S. There is a gap between the shorting plate 6 and the inner surface of the outer cylinder, and they are insulated in terms of direct current, but the shorting plate 6 and the supporting conductor 30
It is in a state of direct current connection. For this purpose, the drift tubes D 1 , D 3 , D 5 are implanted in the parallel conductor 3 via the stems 31 , 32 , 33, and the stems (one stem 22 is visible in Fig. 2) are installed in the parallel conductor 2. The potential is the same as that of the drift tube implanted therebetween, and in this embodiment, the potential is positive. Drift tubes d 1 , d 2 and the like arranged alternately with the aforementioned drift tubes in the outer cylinder 1 by the stems 11, 11', 12, etc. are at the same potential as the outer cylinder 1, and in this embodiment are at a negative potential. There is. Therefore, a DC electric field is established between adjacent drift tubes in each of the two acceleration channels, so that even if the remaining electrons at startup are accelerated by the high-frequency electric field, the forward and return velocities are different, resulting in avalanche multiplication of the electrons. is prevented. By closing the switch S even after starting, multipactoring phenomenon caused by starting following an accidental stop during operation is prevented, and stable operation is guaranteed.
第3,4図を参照して単一チヤンネルイオン加
速器に本発明を適用した第2の実施例を説明す
る。 A second embodiment in which the present invention is applied to a single channel ion accelerator will be described with reference to FIGS. 3 and 4.
第3図において、ドリフトチユーブD1〜D5を
植設した一対の平行導体2,3が外筒1の中にの
びている。この平行導体2,3を外筒内に支持導
体20,30が支持しており、この支持導体に可
動短絡板6が設けられている。この可動板6は外
筒内面から隙間をあけて離してあるが、支持体2
0,30とは密着している。支持導体20,30
は外筒1から絶縁体4により直流的に絶縁されて
いる。直流バイアス電圧源5をスイツチSを介し
て一方の支持導体20と外筒1との間に接続す
る。支持導体20,30は短絡板6を介して同電
位(この実施例では正電位)に保たれ、すべての
ドリフトチユーブD1〜D5は正電位に保たれる。
外筒1は負電位に保持されており、そのためドリ
フトチユーブと外筒との間に直流電界が確立し、
この直流電界が隣接ドリフトチユーブ間の起動時
の残存電子の振動に偏倚力を作用させてマルチパ
クタリング現象の発生を抑制する。 In FIG. 3, a pair of parallel conductors 2 and 3 in which drift tubes D 1 to D 5 are implanted extend into the outer cylinder 1 . Support conductors 20 and 30 support the parallel conductors 2 and 3 within the outer cylinder, and a movable shorting plate 6 is provided on the support conductors. This movable plate 6 is separated from the inner surface of the outer cylinder with a gap, but the support 2
0.30 are in close contact. Support conductor 20, 30
is electrically insulated from the outer cylinder 1 by an insulator 4. A DC bias voltage source 5 is connected via a switch S between one support conductor 20 and the outer cylinder 1. The support conductors 20, 30 are kept at the same potential (positive potential in this embodiment) via the shorting plate 6, and all drift tubes D1 to D5 are kept at a positive potential.
The outer tube 1 is held at a negative potential, so that a DC electric field is established between the drift tube and the outer tube,
This DC electric field exerts a biasing force on the vibrations of the remaining electrons between adjacent drift tubes during startup, thereby suppressing the occurrence of the multipactoring phenomenon.
イオン加速器の起動運転はよく知られているよ
うに、2枚の可動短絡板6を支持導体20,30
に沿つて動かして高周波発振器からの同軸ケーブ
ルのループアンテナから給電される波長λのn/2倍
の距離となる位置に固定してレツヘル線2,3に
安在波を確立する。陽イオンがドリフトチユーブ
D1を出ると、ドリフトチユーブD2との間の加速
電場により加速される。このドリフトチユーブ
D2を通過する間に高周波電位の位相はπだけ変
化してドリフトチユーブD3との間の電場はやは
り加速電場となつて陽イオンを加速する。以下こ
のように順次下流に向つて陽イオンは加速されて
いくのである。 As is well known, in the startup operation of an ion accelerator, two movable shorting plates 6 are connected to supporting conductors 20 and 30.
, and fixed at a position at a distance n/2 times the wavelength λ fed from the loop antenna of the coaxial cable from the high frequency oscillator to establish safe waves on the Retzchel lines 2 and 3. Cation drift tube
Upon exiting D 1 , it is accelerated by the accelerating electric field between it and the drift tube D 2 . this drift tube
While passing through D 2 , the phase of the high-frequency potential changes by π, and the electric field between it and the drift tube D 3 also becomes an accelerating electric field and accelerates the positive ions. In this way, the cations are sequentially accelerated downstream.
第1、第2実施例とも短絡板6を使用している
ため高周波電流はこの短絡板6の上表面に沿つて
流れ、そのため絶縁体4に高周波電流が流れてこ
れを加熱劣化せしめるという不都合は生じない。 Since both the first and second embodiments use the short circuit plate 6, the high frequency current flows along the upper surface of the short circuit plate 6, and therefore the inconvenience that the high frequency current flows through the insulator 4 and causes it to deteriorate due to heating is avoided. Does not occur.
第1図は本発明の第1の実施例の縦断面図、第
2図は第1図の―′線に沿う横断面図であ
る。第3図は本発明の第2実施例の縦断面図、第
4図は第3図の―′線に沿う横断面図であ
る。
図中、1……外筒、D1−D5;d1,d2……ドリ
フトチユーブ、2;3……平行導体、20;30
……支持導体、4……絶縁体、5……直流バイア
ス電源、6……可動短絡板、S……スイツチ。
FIG. 1 is a longitudinal cross-sectional view of a first embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along the line -' in FIG. FIG. 3 is a longitudinal cross-sectional view of a second embodiment of the present invention, and FIG. 4 is a cross-sectional view taken along the line -' in FIG. In the figure, 1...outer cylinder, D1 - D5 ; d1 , d2 ...drift tube, 2; 3...parallel conductor, 20; 30
... Support conductor, 4 ... Insulator, 5 ... DC bias power supply, 6 ... Movable short circuit plate, S ... Switch.
Claims (1)
ーブを植設されている一対の平行導体、これらの
平行導体を前記の外筒内に支持する支持導体、こ
れらの支持導体に設けた可動短絡板、前記の支持
導体を前記の外筒から絶縁する絶縁体、及び隣接
ドリフトチユーブ間又はドリフトチユーブと外筒
との間に直流電界を生ぜしめるため前記の支持体
と前記の外筒とに接続された直流バイアス電圧源
を備えたことを特徴とするイオン線形加速器。1. An outer cylinder, a pair of parallel conductors extending inside the outer cylinder and having a drift tube planted therein, a supporting conductor that supports these parallel conductors in the outer cylinder, and a movable shorting plate provided on these supporting conductors. , an insulator that insulates the supporting conductor from the outer cylinder, and an insulator connected to the support and the outer cylinder for generating a DC electric field between adjacent drift tubes or between the drift tube and the outer cylinder. An ion linear accelerator characterized by being equipped with a direct current bias voltage source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15188881A JPS5853200A (en) | 1981-09-25 | 1981-09-25 | Ion beam accelerator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15188881A JPS5853200A (en) | 1981-09-25 | 1981-09-25 | Ion beam accelerator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5853200A JPS5853200A (en) | 1983-03-29 |
| JPS6141120B2 true JPS6141120B2 (en) | 1986-09-12 |
Family
ID=15528391
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15188881A Granted JPS5853200A (en) | 1981-09-25 | 1981-09-25 | Ion beam accelerator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5853200A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH051970U (en) * | 1991-06-20 | 1993-01-14 | ホシザキ電機株式会社 | Ice removal device for conveyor for carrying ice |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0812799B2 (en) * | 1988-01-08 | 1996-02-07 | 石川島播磨重工業株式会社 | Anti-multipacting structure of particle accelerator |
| JPH0531279Y2 (en) * | 1988-05-25 | 1993-08-11 | ||
| WO2013002303A1 (en) * | 2011-06-30 | 2013-01-03 | 株式会社Quan Japan | Charged particle accelerator and method for accelerating charged particles |
| JP5686453B1 (en) * | 2014-04-23 | 2015-03-18 | 株式会社京都ニュートロニクス | Charged particle accelerator |
-
1981
- 1981-09-25 JP JP15188881A patent/JPS5853200A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH051970U (en) * | 1991-06-20 | 1993-01-14 | ホシザキ電機株式会社 | Ice removal device for conveyor for carrying ice |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5853200A (en) | 1983-03-29 |
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