JPS6142429B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device, particularly a so-called film carrier mounting type package in which a metal protrusion provided on an electrode on a semiconductor element and a metal lead formed on a flexible film are bonded. The present invention relates to packaging, and provides compact and highly reliable packaging in film carrier mounting by forming vapor deposited layers on both sides of the semiconductor element via an organic or inorganic material.

A semiconductor device using conventional packaging will be described with reference to FIG.

First, Cr: 1000 Å, for example, is deposited on the electrode made of aluminum wiring of the semiconductor element 1 by vacuum evaporation.
Cu: 5000 Å is continuously deposited to form a so-called multilayer barrier metal layer. Next, Au protrusions 2 are selectively provided on the barrier metal layer with a height of 10 to 20 μm by electrolytic plating.
The barrier metal layer of the Cr--Cu film that is no longer needed except around the area is removed. In this way, Au protrusions are formed on the electrodes on the semiconductor element. Next, an opening for inserting the semiconductor element is provided in the film 3 made of polyimide resin with a thickness of 125 μm, and then, for example, a 35 μm Cu foil is pasted, and the electrodes of the semiconductor element are formed using photolithography technology. The Cu foil is etched away to form a Cu lead 4 that matches the position of
Plating process to a thickness of . In this way, a film carrier is completed.

By aligning the Sn-plated Cu lead 4 provided on the flexible film 3 with the Au protrusion 2 on the semiconductor element 1 and heating while applying pressure,
An alloy of Sn and Au is formed, and the Au protrusion 2 and Sn
The plated Cu leads are completely bonded. However, in this state, the semiconductor elements are exposed, so they are susceptible to contamination from the atmosphere.
Unprotected and extremely unreliable.

For this purpose, the periphery of the semiconductor is coated with silicone resin, epoxy resin 5, or the like. The semiconductor element 1 mounted on the film carrier is a first
As shown in the figure, the liquid silicone is suspended in the air by the Cu lead 4.
It is difficult to coat with epoxy resin. For example, with a coating as shown by the broken line 6, the central portion of the semiconductor element 1 becomes thicker due to surface tension, but the peripheral portion becomes thinner. For this reason, outside air infiltrates through the thinned peripheral resin, degrading the characteristics of the semiconductor element. Therefore, 5
As shown in the figure, it is necessary to cover the entire semiconductor element 1. In this case, since silicone and epoxy resin have fluidity, a piece of polyimide 3 is placed around the semiconductor element 1 to stop the fluidity of the resin. need to be formed. The polyimide piece 3 stops the flow of the resin 5 and allows it to have a certain shape.

However, in this packaging method, since the resin coating area extends beyond the periphery of the semiconductor element, the thickness of the resin coating inevitably increases. The thickness of the semiconductor element 1 is only 0.3
Although it is only ~0.5 mm, if it were coated with resin using the conventional method, the total thickness would be around 2 mm. Further, the area of the covering resin is at least 1.5 on one side from the end to the semiconductor element.
It expanded to more than mm, increasing the mounting area.

The present invention has been made to eliminate the drawbacks of the conventional semiconductor device, and the semiconductor device according to an embodiment of the present invention will be described below with reference to FIGS.
Explain using. First, as shown in FIG. 2a, metal protrusions 2 are provided on the electrodes of the semiconductor element 1. Next, electrode leads 4 are provided on the polyimide film 3, and the metal protrusions 2 of the semiconductor element 1 and the electrode leads 4 are aligned and bonded under pressure and heat. The above-mentioned steps have already been described in the conventional example.

Next, a material (e.g., epoxy resin or silicone resin) or an inorganic material (e.g., ceramic, glass material) 12, 12' is placed on both sides of the semiconductor element 1, and by applying pressure 11, the structure shown in FIG. 2b is obtained. get. Next, as shown in FIG. 2c, in a vacuum state, a vapor deposition mask 20, 20' is applied to expose the electrode lead portion of the film carrier, which is covered with an organic or inorganic material around the semiconductor element. A rainbow is placed on the semiconductor element 1, and a sputtering method is applied.
Vapor deposition 21, 2 by resistance heating method, electron beam method, etc.
1' to form a vapor deposited layer 22. In this way, a semiconductor device according to an embodiment of the present invention is obtained.

In the step of forming the vapor deposition layer 22, the semiconductor element 1 is caused to move in a planetary manner in the vapor deposition facility, so that the vapor deposition layer is formed in a manner that completely dominates the surface of the organic or inorganic material of the semiconductor element 1. Ru. The vapor deposition layer 22 is made of a corrosion-resistant and dense material, for example, if it is a metal,
Materials such as Cr, Ti, Pt, etc., in the case of inorganic materials, aluminum oxide, Ti oxide, Cr oxide, Si
An oxide of Si, a nitride of Si, a nitride of B, etc. are suitable. The film thickness is approximately 1000 Å or more to several tens of μm, depending on the density of each material.

In other words, in the case of the semiconductor device of this embodiment, since the organic material or inorganic material has a dense vapor deposition layer on the surface thereof, the atmosphere can be maintained even if the thickness of the organic material or inorganic material is thin. Since it is possible to easily prevent the infiltration of moisture, etc., the organic material or inorganic material can be thinned, and the overall thickness can be made extremely thin.

Further, the organic material or inorganic material 12 interposed between the vapor deposition layer 22 and the semiconductor element 1 may be in a liquid or plate shape, and the thickness of the organic material or inorganic material depends on the thickness of the packaging. In order to make it thin, it is better to be as thin as possible. Therefore, it is sufficient that the thickness is such that electrical insulation between the semiconductor element 1 and the deposited layer 22 can be obtained, so a thickness of 1 μm or more is sufficient. When the intervening organic material or inorganic material 12 is liquid, the liquid organic or inorganic material is dropped onto the main surface and the other surface of the semiconductor element 1, and pressure is applied uniformly from both sides of the semiconductor element 1. , it may be hardened by means such as heating.

Further, when the organic material or inorganic material 12 is plate-shaped, its shape may be made almost the same as that of the semiconductor element 1, and the material may be cured by applying pressure and heating.

By applying pressure in this manner, the extruded resin is transferred to the semiconductor element 1 as shown in FIG. 2b.
The semiconductor element 1 is completely protected by wrapping around the sides of the semiconductor element 1.

Note that if the organic material or inorganic material 12 interposed between the semiconductor element 1 and the vapor deposition layer 22 is in a liquid state, it may be dropped and then pressurized and heated to be cured as described above. As shown in FIG. 3a, the organic material or inorganic material 23 is formed by dropping and curing as is, and as shown in FIG.
0', and the vapor deposition layer 22 is deposited within the vapor deposition layer.
It is also possible to make it 1,21'. That is, in the case of this embodiment, since the dense vapor deposition layer 22 is deposited on the entire surface of the organic material or inorganic material 23, some non-uniformity occurs in the thickness of the organic material or inorganic material 23. Even in such a case, the organic material or inorganic material 23 completely prevents the infiltration of outside air and prevents the reliability of the semiconductor element 1 from deteriorating.

The semiconductor device according to the packaging of the present invention is cut from the polyimide film and the electrode leads 4 are molded to form the result as shown in FIG. It is possible to connect, configure, and implement a circuit using various means.

Next, a semiconductor device according to still another embodiment of the present invention will be described.

In the semiconductor device having the structure shown in FIG.
2'. With such a configuration, it is possible to obtain a package having the same concept as a chip carrier of a so-called semiconductor device package. Compared to the configuration shown in FIG. 4, the configuration shown in FIG. 5 increases the mounting area because the length of the electrode lead required for connection to the wiring board is added to the size of the semiconductor element. do not have. In other words, the length of the electrode lead required for connection to the wiring board is 13' in Fig. 4, but the length of the electrode lead is 13' in Fig.
In the figure, it corresponds to 14'. Therefore, in FIG. 4, the bent electrode leads 13' are
1.5mm is required, but in Figure 5, electrode lead plate 1
Since it is bent in the 0' direction, the packaging density can be increased by 1 to 1.5 mm.

In the configuration of this example, the vapor deposition layer is not a single layer film, but may be formed by successively vapor depositing multilayer films such as Cr-Cr ₂ O ₃ , Ti-Ti ₂ O ₃ , Cr-Al ₂ O ₃ , etc. It's good.

Next, a semiconductor device according to still another embodiment of the present invention will be described with reference to FIGS. 6 and 7. Organic material or inorganic material 12 formed on the entire surface of the semiconductor element 1
A resin layer (epoxy, silicone resin) 24 is further formed on the upper vapor deposition layer 22. In such a configuration, since the infiltration of outside air can be further prevented, reliability is significantly improved. The resin layer 24 on the vapor deposition layer 22 can be formed by a method such as a spraying method, a dropping method, or a brushing method.

In still another embodiment, in the configuration of the semiconductor device shown in FIG. 7, the organic material or inorganic material 12
extends to the polyimide 3 portion of the film carrier, completely covering the semiconductor element with the polyimide 3 and the organic or inorganic material 12. Therefore, it is possible to completely shut off outside air and ensure high reliability.

As described above, the structure of the semiconductor device of the present invention has the following effects.

(1) The entire semiconductor element is covered with a dense, dense, and thin vapor-deposited film using an organic or inorganic material. Therefore, since the vapor-deposited film prevents outside air from entering, the organic material or inorganic material can be formed very thin. Therefore, it is possible to provide a significantly smaller package than conventional semiconductor devices.

(2) Since the entire semiconductor element is protected by an organic or inorganic material and a densely deposited film,
It is possible to actively prevent the infiltration of outside air and provide a highly reliable semiconductor device package.

(3) As mentioned in (1), in addition to being able to significantly reduce the planar area of the package, the semiconductor element 1 can be protected thinly by the vapor deposited film, so the overall thickness can be reduced even if the semiconductor element is 0.5 mm,
If the thickness of the deposited film is 10 μm and the thickness of the intervening resin is approximately 2 μm, a package of 0.512 mm can be obtained.

(4) In the configuration of the semiconductor device of the present invention, for example, the second
As described in the figure, when pressure is applied from both sides of the semiconductor element, the organic material or inorganic material is formed flat along the surface of the semiconductor element, and a vapor deposited film is formed on this, so that the semiconductor element is Even if the device requires heat radiation, the vapor deposited film can be die-bonded directly to the wiring board, and ideal heat radiation can be achieved.

(5) Furthermore, as already mentioned, in the structure of the semiconductor device of the present invention, since both surfaces of the semiconductor element are flat, heat dissipation characteristics can be obtained uniformly in the planar direction of the semiconductor element. In the conventional example, since the resin bulges in the center of the semiconductor element, heat from the semiconductor element tends to be trapped in the center of the semiconductor element, which may lead to thermal damage to the semiconductor element. In contrast, in the present invention, since the plate is on the same plane as the semiconductor element and is close to the semiconductor element by only a few micrometers, the heat generated by the semiconductor element can be radiated uniformly.

[Brief explanation of the drawing]

Figure 1 is a cross-sectional view of a conventional semiconductor device, Figure 2a
-c are cross-sectional views for explaining the structure of a semiconductor device in one embodiment of the present invention; FIGS. 3a and 3b are cross-sectional views for explaining the structure of a semiconductor device in another embodiment of the present invention; 4, FIG. 5, FIG. 6, and FIG. 7 are sectional views of semiconductor devices according to still other embodiments of the present invention. DESCRIPTION OF SYMBOLS 1... Semiconductor element, 2... Metal protrusion, 3... Film, 4... Electrode lead, 12... Organic material or inorganic material, 22... Vapor deposited film.

Claims (1)

[Scope of Claims] 1. A vapor deposited layer containing the semiconductor element is formed using an organic material on the main surface and the other surface of the semiconductor element to which a metal lead with a flexible film integrated with the electrode on the semiconductor element is fixed. Or a semiconductor device characterized in that it is installed through an inorganic material layer. 2. The semiconductor according to claim 1, characterized in that the metal lead extends to a surface not passing through an organic material or inorganic material layer of a vapor deposited layer provided on the main surface or the other surface of the semiconductor element. Device. 3. A vapor deposited layer containing the semiconductor element is coated with a first organic or inorganic material on the main surface and the other surface of the semiconductor element to which a metal lead with a flexible film integrated with the electrode on the semiconductor element is fixed. 1. A semiconductor device, characterized in that a second layer of an organic material or an inorganic material is provided on the vapor deposition layer.