JPS6145347B2 - - Google Patents
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- Publication number
- JPS6145347B2 JPS6145347B2 JP57215980A JP21598082A JPS6145347B2 JP S6145347 B2 JPS6145347 B2 JP S6145347B2 JP 57215980 A JP57215980 A JP 57215980A JP 21598082 A JP21598082 A JP 21598082A JP S6145347 B2 JPS6145347 B2 JP S6145347B2
- Authority
- JP
- Japan
- Prior art keywords
- phosphor
- anode
- substrate
- light
- zno
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
- C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Luminescent Compositions (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
Description
(イ) 産業上の利用分野
本発明の低速電子線用蛍光体は蛍光表示管に利
用されている。また蛍光表示管は、ハンデイ電
卓、クロツク、キヤシユレジスター、オーデイオ
機器、家電用、車載用、計測機器の表示素子とし
て、輝度が高くかつ鮮明であり、青、緑、黄、
橙、赤等の広範囲の色の表示が得られる。また低
電圧で動作し、かつ消費電力が小さく、応答速度
も速いのでLSIで直接駆動できる。さらに、薄膜
技術により表示パターンを作製できるため、精密
で自由なパターンの表示をすることができる。さ
らにまた、端子以外は、真空中に収容されている
ので信頼性が高く、長寿命である等の特長を有し
ているため前述のような各種電子機器の表示素子
として利用されている。
(ロ) 従来技術
低速電子線用蛍光体は、1980年1月1日発行の
エレクトロセラミクス第11巻の42頁から48頁に示
されているように適度の導電性を有していること
が必要であり、導電性を与える方法により次のよ
うに3種類に分類されている。
(a) 低抵抗母体形蛍光体
代表例は、ZnO:Zn蛍光体があり、蛍光体の
母体として導電物質を使用する蛍光体である。
この他にSnO2:Eu螢光体や(Zn1-xCdx)
S:Ag蛍光体がある。
(b) 混合形蛍光体
例えばZnS:Ag+In2O3蛍光体があり、高抵
抗の蛍光体、ZnS:Ag、ZnS:Cu、Al、
Y2O2S:EuなどにSnO2、In2O3、ZnOなどの導
電物質を混合して全体として低抵抗化した蛍光
体である。
(c) ドープ形蛍光体
例えば、ZnS:Ag、Zn、Al蛍光体がある。
このZnS:Ag蛍光体は、通常絶縁体に近い
が、この結晶中にZnやAlなどの不純物をドー
プしてZn空孔を埋めて導電性を付与した蛍光
体。
本発明のZnO:Znに導電物質を被着させた低速
電子線用蛍光体は、前述の分類では(a)低抵抗母体
形蛍光体に属するものである。
しかしながら、この低抵抗の蛍光体として知ら
れているZnO:Zn蛍光体層でも見かけの比抵抗は
1×104Ωcm〜1×106Ωcm位の抵抗をもつている
ことが知られている。また前記の低速電子線用蛍
光体を使用する蛍光表示管の従来例として特開昭
54−133874号公報がある。この蛍光表示管は、透
光性を有する基板上に微小な透光間隙群を有する
陽極上に蛍光体を被着し、陽極と対向して配設さ
れた陰極から放出される電子の射突により発光し
た蛍光体の発光を前記陽極の間隙群を透過し、基
板を通して観察するタイプである。
この従来例の基板上の陽極導体と蛍光体層の関
係を拡大した断面図で第1図に示す。
ガラス基板1上にAlやAg等の陽極導体2が複
数配設されるとともに陽極導体間に間隙3を形成
し、この陽極導体2および間隙3上にZnO:Zn蛍
光体層4を被着配設して陽極基板を構成してい
た。
従つて図示してない陰極から放出された電子
が蛍光体の表面に射突し、前述のように1×104
Ωcm〜1×106Ωcmの比抵抗をもつ蛍光体を通つ
て陽極導体に流れる。また陽極電流は、電子の
流れと逆方向に流れるが、途中に蛍光体層による
抵抗があるので蛍光体層表面の電位は、陽極導体
の電位より蛍光体表面の電位は低下する。すなわ
ち電圧降下という現象を生じる。蛍光体層の表面
電位の低下する割合は、陽極導体と蛍光体層表面
との距離によつて決まる。すなわち前記距離が大
きいほど電圧降下が大きくなり表面電位が下がる
ことになり、その結果陽極電流が低下する。この
表面電位が所定値以下になると発光輝度が低下す
るか、発光しなくなる。
従つて、蛍光体4の発光は陽極導体2の真上が
一番よく光り、陽極導体2から離れた間隙3上で
は輝度が下ることになる。
しかし、一番輝度の高い陽極導体2の真上の蛍
光体4の発光は、陽極導体2が透明電極でない場
合は、基板1を通して観察できないという矛盾が
ある。
従つて均一にかつ優れた輝度で発光させるには
間隙幅を狭くする方がよいが、開孔率が小さくな
り基板を通して見える光量が少なくなるという矛
盾を生ずる。
すなわち従来の間隙を有する陽極導体上に、
ZnO:Zn蛍光体を被着し、基板を通して観察する
タイプの蛍光表示管は、前述のような問題点があ
り輝度が上らないという欠点や、陽極導体近傍
は、輝度が高いが、間隙部の中間付近は、輝度が
低下していて、セグメントが均一な発光が得られ
ず、表示品位が悪いという問題点があつた。
(ハ) 発明の目的
本発明は、上述した事情に鑑みてなされたもの
であり間隙を有する陽極構造であつて、基板を通
して観察するいわゆる前面発光形蛍光表示管に使
用しても、セグメントが均一に発光し、表示品位
が優れ、発光輝度を高くすることが可能な低速電
子線用蛍光体を使用した蛍光表示管を提供するこ
とを目的とするものである。
(ニ) 発明の構成
前記目的を達成するために、本発明の構成は、
透光性の絶縁基板の一方の面に設けられた上面に
蛍光体層の被着された陽極に熱陰極から放出され
た電子を射突させて、前記蛍光体層を励起発光さ
せ透光性基板を通して表示を得る蛍光表示管にお
いて、導電性薄膜でメツシユ状、くし歯状、スト
ライプ状等の間隙を有するように前記透光性基板
上に被着した陽極導体と、低速電子線の射突によ
り励起発光するZnO:Zn蛍光体に対して0.01重量
%〜5重量%の導電性物質を被着させた低速電子
線用蛍光体を前記陽極導体および間隙上に被着形
成させ前記間隙に導電性物質が多く存在すること
により間隙部に被着させた蛍光体層に電圧降下を
生じさせないように構成した蛍光表示管である。
(ホ) 実施例の説明
本発明の実施例を以下図面を参照して詳細に説
明する。
第2図は、本発明の低速電子線用蛍光体の拡大
図を示すものであり、5は、従来公知のZnO:Zn
蛍光体5である。このZnO:Zn蛍光体5の粒径
は、0.5〜15μm程度のものが使用できるが、こ
の実施例では平均粒径が7.2μmのものを使用し
た。このZnO:Zn蛍光体5に導電物質6を添加混
合するのであるが、この導電物質6には、
In2O3、In2O3−SnO2(ITO)、SnO2、SnO2−
Sb2O5、TiO2などがあるがこの実施例の場合は、
導電物質6としてIn2O3を使用した。このIn2O3導
電物質6の粒径は、平均粒径が0.3〜0.4μmであ
り、前記ZnO:Zn蛍光体5の粒径に対し非常に小
さく超微粒子であることが望ましい。
前記ZnO:Zn蛍光体5にIn2O3導電物質6を添
加し、長時間かくはん混台する。In2O3導電物質
6の添加量は、ZnO:Zn蛍光体5に対し、0.01重
量%〜5重量%が良好であり第2図に示すように
ZnO:Zn蛍光体5の表面にIn2O3導電物質6が被
着される。
前記のとおりに形成したIn2O3入りのZnO:Zn
蛍光体の効果を調べる為に次のような条件で蛍光
表示管を製作し特性を調べた。
ZnO:Zn蛍光体に添加する導電物質としての
In2O3量を0重量%、0.05重量%、0.1重量%、0.5
重量%、1.0重量、5.0重量%と変化させた蛍光体
にセルロース系ビークル(メチルセルロース、エ
チルエルロース等のセルロース系のバインダー
に、バインダーの溶剤を加えたもの)を前記蛍光
体10部に対しセルロース系ビークルを3〜10部加
えた後よくかくはん混合し、ペースト状の蛍光体
を形成する。このZnO:Zn蛍光体の平均粒径は、
7.2μmでありIn2O3の平均粒径は、0.3μmであ
る。陽極導体は、ガラス基板1の全面にAlの薄
膜を蒸着法、スパツタリング法、イオンプレーテ
ング法等の物理的方法で被着した後フオトエツチ
ング法により例えば第4図に示すように陽極導体
2及び配線導体7のパターンを形成する。陽極導
体2は、縦方向と横方向の線を直交させて方形の
メツシユ構造とした。この場合のAlの線幅は10
μmであり、線と線の間隙幅は、90μmとした。
又比較するために第3図Bに示すようなAlの陽
極に間隙を設けないAlのベタの陽極導体2を形
成した。なお、メツシユの形は方形のほか6角
形、8角形など多角形で構成してもよいことはも
ちろんである。
第3図A,Bに示すようにメツシユ構造及びベ
タ構造の各陽極導体に前記導電物質6を被着させ
た蛍光体5ペーストを厚膜印刷法で被着形成して
陽極基板を形成した。前記陽極導体2と蛍光体層
4からなる陽極に対面する上方に制御電極8陰極
9を配設し、側面板10と背面板11からなる背
面容器を前記陽極基板に高真空状態を保つように
封着し、第5図、第6図に示すような蛍光表示管
を形成し蛍光体の特性をしらべる。
これらの蛍光表示管にアノード電流Ib(7セグ
メントの1けた分の面積0.18cm2を0.1mA流した
ときのアノード電圧Ebを測定し、Eb/Ibの値を
電子の流れ易すさを表わす数として算出した。そ
の結果表−1に示す値を得た。
(a) Industrial application field The low-speed electron beam phosphor of the present invention is used in fluorescent display tubes. In addition, fluorescent display tubes have high brightness and clarity, and are used as display elements in handheld calculators, clocks, cash registers, audio equipment, home appliances, automobiles, and measuring instruments.
A wide range of colors such as orange and red can be displayed. In addition, it operates at low voltage, consumes little power, and has a fast response speed, so it can be driven directly by an LSI. Furthermore, since display patterns can be produced using thin film technology, precise and free patterns can be displayed. Furthermore, since everything other than the terminals is housed in a vacuum, it has features such as high reliability and long life, so it is used as a display element in various electronic devices as mentioned above. (b) Prior art It is known that phosphors for slow electron beams have appropriate conductivity, as shown on pages 42 to 48 of Electroceramics Vol. 11, published January 1, 1980. It is classified into the following three types depending on the method of imparting conductivity. (a) Low-resistance matrix phosphor A typical example is ZnO:Zn phosphor, which uses a conductive material as the matrix of the phosphor. In addition, SnO 2 :Eu phosphor and (Zn 1-x Cd x )
S: There is an Ag phosphor. (b) Mixed phosphor For example, ZnS:Ag+In 2 O 3 phosphor, high resistance phosphor, ZnS:Ag, ZnS:Cu, Al,
Y 2 O 2 S: A phosphor containing Eu and other conductive substances such as SnO 2 , In 2 O 3 , and ZnO to reduce the overall resistance. (c) Doped phosphors Examples include ZnS:Ag, Zn, and Al phosphors.
This ZnS:Ag phosphor is normally close to an insulator, but this phosphor has impurities such as Zn and Al doped into its crystal to fill the Zn vacancies and give it conductivity. The low-speed electron beam phosphor of the present invention, in which ZnO:Zn is coated with a conductive material, belongs to the (a) low-resistance matrix-type phosphor according to the aforementioned classification. However, it is known that even the ZnO:Zn phosphor layer, which is known as a low-resistance phosphor, has an apparent resistivity of about 1×10 4 Ωcm to 1×10 6 Ωcm. In addition, as a conventional example of a fluorescent display tube using the above-mentioned phosphor for low-speed electron beams,
There is a publication No. 54-133874. This fluorescent display tube has a phosphor coated on an anode having a group of small light-transmitting gaps on a light-transmitting substrate, and the electrons emitted from the cathode placed opposite to the anode collide. In this type, the light emitted from the phosphor is transmitted through the gaps between the anodes and observed through the substrate. FIG. 1 is an enlarged sectional view showing the relationship between the anode conductor and the phosphor layer on the substrate of this conventional example. A plurality of anode conductors 2 made of Al, Ag, etc. are arranged on a glass substrate 1, gaps 3 are formed between the anode conductors, and a ZnO:Zn phosphor layer 4 is deposited on the anode conductors 2 and gaps 3. was used to form the anode substrate. Therefore, electrons emitted from the cathode (not shown) impinge on the surface of the phosphor, and as described above, the electrons are 1×10 4
It flows to the anode conductor through a phosphor having a resistivity of Ωcm to 1×10 6 Ωcm. Further, the anode current flows in the opposite direction to the flow of electrons, but since there is resistance due to the phosphor layer on the way, the potential on the surface of the phosphor layer is lower than the potential on the anode conductor. In other words, a phenomenon called voltage drop occurs. The rate at which the surface potential of the phosphor layer decreases is determined by the distance between the anode conductor and the surface of the phosphor layer. That is, the larger the distance, the greater the voltage drop and the lower the surface potential, resulting in a lower anode current. When this surface potential becomes less than a predetermined value, the luminance of light emission decreases or no light is emitted. Therefore, the luminescence of the phosphor 4 shines best right above the anode conductor 2, and the brightness decreases above the gap 3 away from the anode conductor 2. However, there is a contradiction in that the light emitted from the phosphor 4 directly above the anode conductor 2, which has the highest brightness, cannot be observed through the substrate 1 if the anode conductor 2 is not a transparent electrode. Therefore, in order to emit light uniformly and with excellent brightness, it is better to narrow the gap width, but this creates a contradiction in that the aperture ratio decreases and the amount of light that can be seen through the substrate decreases. That is, on an anode conductor with a conventional gap,
ZnO: Fluorescent display tubes that are coated with Zn phosphor and viewed through the substrate have the above-mentioned problems such that the brightness does not increase, and although the brightness is high near the anode conductor, it is difficult to see through the gap. There was a problem in that near the middle of , the brightness was low, the segments could not emit uniform light, and the display quality was poor. (c) Purpose of the Invention The present invention has been made in view of the above-mentioned circumstances, and has an anode structure with a gap, and even when used in a so-called front-emitting fluorescent display tube in which observation is made through a substrate, the segments are uniform. It is an object of the present invention to provide a fluorescent display tube using a phosphor for low-speed electron beams, which emits light, has excellent display quality, and can increase luminance. (d) Structure of the invention In order to achieve the above object, the structure of the present invention is as follows:
Electrons emitted from the hot cathode are made to strike an anode provided on one surface of a translucent insulating substrate, the upper surface of which is coated with a phosphor layer, to excite the phosphor layer and emit light, thereby making the phosphor layer transparent. In a fluorescent display tube that obtains a display through a substrate, a low-speed electron beam impinges on the anode conductor, which is a conductive thin film and is deposited on the transparent substrate with gaps such as a mesh, comb, or stripe shape. A phosphor for low-speed electron beams, which is coated with 0.01% to 5% by weight of a conductive material based on the ZnO:Zn phosphor, is deposited on the anode conductor and the gap to conduct electricity in the gap. This fluorescent display tube is constructed so that a voltage drop does not occur in the phosphor layer deposited in the gap due to the presence of a large amount of a chemical substance. (E) Description of Embodiments Embodiments of the present invention will be described in detail below with reference to the drawings. FIG. 2 shows an enlarged view of the low-speed electron beam phosphor of the present invention, and 5 is a conventionally known ZnO:Zn
This is the phosphor 5. The ZnO:Zn phosphor 5 having a particle size of about 0.5 to 15 μm can be used, but in this example, one with an average particle size of 7.2 μm was used. A conductive substance 6 is added to and mixed with this ZnO:Zn phosphor 5.
In 2 O 3 , In 2 O 3 −SnO 2 (ITO), SnO 2 , SnO 2 −
Examples include Sb 2 O 5 and TiO 2 , but in this example,
In 2 O 3 was used as the conductive material 6. The average particle size of the In 2 O 3 conductive material 6 is 0.3 to 0.4 μm, which is very small compared to the particle size of the ZnO:Zn phosphor 5 and is preferably ultrafine. In 2 O 3 conductive material 6 is added to the ZnO:Zn phosphor 5 and stirred for a long time. The amount of the In 2 O 3 conductive substance 6 to be added is preferably 0.01% to 5% by weight relative to the ZnO:Zn phosphor 5, as shown in Figure 2.
ZnO: An In 2 O 3 conductive material 6 is deposited on the surface of the Zn phosphor 5 . ZnO:Zn with In 2 O 3 formed as described above
In order to investigate the effect of the phosphor, a fluorescent display tube was manufactured under the following conditions and its characteristics were investigated. ZnO: As a conductive material added to Zn phosphor
In 2 O 3 amount 0 wt%, 0.05 wt%, 0.1 wt%, 0.5
A cellulose-based vehicle (a cellulose-based binder such as methyl cellulose or ethyl elulose, to which a binder solvent is added) is added to the phosphor at 1.0 and 5.0 parts by weight for each 10 parts of the phosphor. After adding 3 to 10 parts of the system vehicle, the mixture is thoroughly stirred and mixed to form a paste-like phosphor. The average particle size of this ZnO:Zn phosphor is
The average particle size of In 2 O 3 is 0.3 μm. The anode conductor is made by depositing a thin film of Al on the entire surface of the glass substrate 1 by a physical method such as vapor deposition, sputtering, or ion plating, and then by photoetching the anode conductor 2 and the like as shown in FIG. A pattern of wiring conductor 7 is formed. The anode conductor 2 had a rectangular mesh structure with vertical and horizontal lines perpendicular to each other. The line width of Al in this case is 10
The width of the gap between the lines was 90 μm.
For comparison, a solid Al anode conductor 2 with no gap was formed on the Al anode as shown in FIG. 3B. It should be noted that the shape of the mesh may, of course, be composed of polygons such as hexagons and octagons in addition to rectangles. As shown in FIGS. 3A and 3B, a phosphor 5 paste coated with the conductive material 6 was deposited on each anode conductor having a mesh structure and a solid structure by a thick film printing method to form an anode substrate. A control electrode 8 and a cathode 9 are disposed above facing the anode consisting of the anode conductor 2 and the phosphor layer 4, and a rear container consisting of a side plate 10 and a back plate 11 is placed on the anode substrate so as to maintain a high vacuum state. After sealing, a fluorescent display tube as shown in FIGS. 5 and 6 was formed, and the characteristics of the phosphor were examined. Measure the anode voltage Eb when an anode current Ib (0.1 mA with an area of 0.18 cm 2 corresponding to one digit of 7 segments flows through these fluorescent display tubes), and calculate the value of Eb/Ib as a number representing the ease with which electrons flow. As a result, the values shown in Table 1 were obtained.
【表】
この表からもわかるように従来のようなAl陽
極がベタで蛍光体と距離が小さく、蛍光体層の抵
抗を下げるIn2O3量が0%のタイプが理想的な発
光状態であり、この状態のEb/Ibは、1.4×104で
ある。このような発光状態にAlメツシユタイプ
でIn2O3を蛍光体に被着させて、前記理想的なタ
イプと同程度の電子の流れ易い状態にするには、
Alメツシユタイプでは、In2O3を0.05重量%と0.1
重量%の間のある量を加えればEb/Ibが1.4×104
になり理想的な発光状態になることがわかる。す
なわち一般にIn2O3量を多く加えるほど導電率
は、大きくなるが、発光効率ηは、導電物質のあ
る量をピークとして下がつてくることが知られて
いる。この導電率ρと発光効率ηの関係をグラフ
で示すと第7図に示すようになる。これはある程
度以上導電物質を加えると、導電物質は電流を流
すだけで、発光は、しないので、逆に蛍光体の励
起に奇与する電子が減つて発光を阻害することに
なる。第8図は、前述の蛍光表示管を発光させた
ときのアノード電圧Ebと陽極(アノード)の相
対輝度Lとの関係を表わしたグラフである。
このグラフにおいて、陽極導体がAlメツシユ
電極にIn2O3をそれぞれ0.05、0.5、5重量%加え
た蛍光体層のグラフA,B,CとIn2O3が0%の
蛍光体層のグラフDを比較してみるとメツシユタ
イプの陽極導体にIn2O3を入れないZnO:Zn蛍光
体のみでは、アノード電圧が高くなるが、In2O3
を添加することによりしきい値電圧が低くなると
ともに、ある動作電圧、例えば12Vにおいて、
In2O3が0%のときには相対輝度Lは、40位であ
るが、In2O3を添加したものは70以上と相対輝度
が高いことがわかる。
第9図は、ZnO:Zn蛍光体(平均粒径7.2μ
m)に導電物質であるIn2O3(平均粒径0.3μm)
の添加量とIn2O3添加Zn2O:Zn蛍光体の相対輝度
Lとの関係のグラフである。In2O3を0.01%位添
加すると相対輝度Lは、ほぼ50位であるIn2O3が
0.01%以下だと導電性を与える効果がなくIn2O3
の添加量を増加させるとしだいに相対輝度Lも上
り、In2O3の添加量が0.5%前後で相対輝度Lのピ
ークがあり、In2O3の添加量が0.5%以上になると
In2O3がZnO:Zn蛍光体の発光を阻害して相対輝
度Lがしだいに落ちてくる。添加量が5.0%で相
対輝度Lはほぼ50位であり相対輝度Lが50以上あ
ると通常使用に耐える。
前記実施例では導電物質としてIn2O3を使用し
た例を説明したが、In2O3の代わりにIn2O3−
SnO2、SnO2、SnO2−Sb2O5等の導電物質を添加
した場合でも前記In2O3の実施例に準じ、0.01重
量%〜5重量%添加することにより同様の効果が
あることが実験をとおして知見した。
前述のようにして形成した蛍光体を使用する本
発明の前面発光形の蛍光表示管の実施例を第3図
A、第4図〜第6図を参照して以下説明する。
基板1は、ガラス、セラミツクス等の絶縁性を
有するとともに透光性を有することが必要であ
る。透孔性とは、例えばガラス基板の例で説明す
れば、透明な並板ガラスはもちろん、一方の面を
物理的に凹凸状態を作つたスリガラスや化学的に
エツチングで凹凸状態を作つたエツチングガラス
等の半透明なガラスも含まれる。本実施例ではエ
ツチングガラスを使用した場合を説明する。
エツチングガラスを長方形にカツトして基板1
とする。
前記基板1に、蒸着法、スパツタリング法、イ
オンプレーテング法等の物理的方法や、化学メツ
キやC・V・D等の方法によつて、基板1の一方
の面の生体にAl、Ag、Cr、Au、Ni等の導電性薄
膜を被着成形する。そして陽極導体2配線導体7
以外の導電性薄膜をフオトエツチング法によつて
削除し、例えば第4図に示すような導電性薄膜に
よるパターンを形成する。
このパターンは、Alで各々のセグメントごと
に配設した陽極導体2と、陽極導体2と接続して
いる配線導体7とを配設する。陽極導体2は、
Al薄膜の細線(線幅10μm)を縦横に配設し方
形のメツシユの間隙を多数作るように陽極導体を
形成する。またメツシユの外周には、Al薄膜の
枠部が配設される。この陽極導体2の上面に、厚
膜印刷法で導電物質入り蛍光体4を第3図Aに示
すように、陽極導体2および間隙部3に被着させ
る。さらに蛍光体層4はメツシユ上より多少はみ
だして枠部上に被着されてもよいので、印刷精度
が多少悪くても容易に被着させることができるの
である。前記基板1の蛍光体層4と対面する位置
に第5図、第6図に示すように制御電極8および
フイラメント状の陰極9が配設される。基板1上
に必要に応じて絶縁層12を配設してもよい。こ
の基板1に側面板10と背面板11からなる背面
容器を封着した後排気管13より排気し封止して
内部を高真空に保持して本発明の蛍光表示管が出
来る。
なお本発明は、図面に示し、以上説明した実施
例に限定されるものでなく、本発明の要旨を変え
ない範囲で種々変更して実施できるものである。
例えば実施例ではスタテツク駆動のパターンを示
したが、ダイナミツク駆動のパターンでも本発明
は実施できるものである。
(ヘ) 発明の作用効果
本発明は、以上説明したように、ZnO:Zn蛍光
体に導電物質を添加した蛍光体を間隙を有する陽
極セグメントに被着形成したので、陽極に陽極電
流を通電し発光させる場合、間隙部に被着させた
蛍光体層でも、電圧降下が生じないで、電流が流
れるので、陽極導体上の蛍光体層と同等に発光す
ることが可能である。従つて間隙の発光のみを表
示する前面発光表示管において各間隙部が均一に
発光することが可能であるのでセグメント全体で
も均一に発光表示し、表示品位が優れているとい
う効果がある。また抵抗が小さいので陽極電流を
多く流すことが可能であり、従来のZnO:Zn蛍光
体を使用した蛍光表示管より高輝度に発光させる
ことができる効果もある。
また蛍光体の抵抗が小さくなつたのでメツシユ
の間隙幅を大きくしても均一に発光できる効果が
ある。しかして前面発光形蛍光表示管の各セグメ
ントの陽極導体の開孔率を大きくできるため観察
者側への発光量が増加し、この点からも高輝度化
が可能であるという効果がある。[Table] As can be seen from this table, the ideal light-emitting state is the conventional type where the Al anode is solid and the distance from the phosphor is small, and the amount of In 2 O 3 that lowers the resistance of the phosphor layer is 0%. Yes, and Eb/Ib in this state is 1.4×10 4 . In order to create a state in which electrons can easily flow to the same degree as the ideal type by depositing In 2 O 3 on the phosphor using an Al mesh type in such a light-emitting state,
For Al mesh type, In2O3 is 0.05% by weight and 0.1% by weight .
If a certain amount between weight% is added, Eb/Ib becomes 1.4×10 4
It can be seen that this results in an ideal light emitting condition. That is, in general, the electrical conductivity increases as the amount of In 2 O 3 is added, but it is known that the luminous efficiency η peaks at a certain amount of conductive material and then decreases. The relationship between the electrical conductivity ρ and the luminous efficiency η is shown in FIG. 7 in a graph. This is because if a certain amount of conductive material is added, the conductive material only allows current to flow but does not emit light, which in turn reduces the number of electrons that contribute to the excitation of the phosphor, thereby inhibiting light emission. FIG. 8 is a graph showing the relationship between the anode voltage Eb and the relative brightness L of the anode when the above-mentioned fluorescent display tube emits light. In this graph, the anode conductor is an Al mesh electrode with graphs A, B, and C for phosphor layers containing 0.05, 0.5, and 5% by weight of In 2 O 3 , respectively, and graphs for phosphor layers with 0% In 2 O 3 . Comparing D, we see that with only ZnO:Zn phosphor without In 2 O 3 in the mesh type anode conductor, the anode voltage will be high, but In 2 O 3
By adding , the threshold voltage becomes lower and at a certain operating voltage, for example 12V,
It can be seen that when In 2 O 3 is 0%, the relative brightness L is around 40, but when In 2 O 3 is added, the relative brightness is higher than 70. Figure 9 shows ZnO:Zn phosphor (average particle size 7.2μ).
m) is a conductive material In 2 O 3 (average particle size 0.3 μm)
2 is a graph of the relationship between the amount of addition of In 2 O 3 and the relative brightness L of the In 2 O 3-doped Zn 2 O:Zn phosphor. When about 0.01% of In 2 O 3 is added, the relative luminance L is about 50th, which is about 50 % .
If it is less than 0.01%, it has no effect of imparting conductivity and In 2 O 3
As the amount of In 2 O 3 added increases, the relative brightness L gradually increases, and the relative brightness L peaks when the amount of In 2 O 3 added is around 0.5%, and when the amount of In 2 O 3 added is 0.5% or more,
In 2 O 3 inhibits the light emission of the ZnO:Zn phosphor, and the relative brightness L gradually decreases. When the additive amount is 5.0%, the relative brightness L is approximately 50, and if the relative brightness L is 50 or more, it can withstand normal use. In the above embodiment, In 2 O 3 was used as the conductive material, but In 2 O 3 − was used instead of In 2 O 3 .
Even when a conductive substance such as SnO 2 , SnO 2 , SnO 2 -Sb 2 O 5 is added, the same effect can be obtained by adding 0.01% to 5% by weight according to the example of In 2 O 3 described above. was discovered through experiments. An embodiment of a front-emitting type fluorescent display tube of the present invention using the phosphor formed as described above will be described below with reference to FIGS. 3A and 4 to 6. The substrate 1 is required to have insulating properties such as glass or ceramics, and also to have translucency. For example, porosity can be explained using the example of glass substrates, such as clear plain glass, ground glass that has a physically uneven surface on one side, etched glass that has an uneven surface that has been chemically etched, etc. Also includes translucent glass. In this embodiment, a case will be explained in which etching glass is used. Cut the etching glass into a rectangle and make the substrate 1.
shall be. The substrate 1 is coated with Al, Ag, Ag, A conductive thin film of Cr, Au, Ni, etc. is deposited and molded. and anode conductor 2 wiring conductor 7
The remaining conductive thin film is removed by photoetching to form a pattern of the conductive thin film as shown in FIG. 4, for example. In this pattern, an anode conductor 2 made of Al is arranged for each segment, and a wiring conductor 7 connected to the anode conductor 2 is arranged. The anode conductor 2 is
The anode conductor is formed by arranging fine lines (line width 10 μm) of Al thin film vertically and horizontally to create many gaps in the square mesh. Furthermore, a frame portion of an Al thin film is provided around the outer periphery of the mesh. On the upper surface of this anode conductor 2, a conductive substance-containing phosphor 4 is applied to the anode conductor 2 and the gap 3 by a thick film printing method, as shown in FIG. 3A. Further, since the phosphor layer 4 may be applied onto the frame portion slightly protruding from the mesh, the phosphor layer 4 can be easily applied even if the printing accuracy is somewhat poor. As shown in FIGS. 5 and 6, a control electrode 8 and a filament-shaped cathode 9 are disposed on the substrate 1 at a position facing the phosphor layer 4. As shown in FIGS. An insulating layer 12 may be provided on the substrate 1 if necessary. After a back container consisting of a side plate 10 and a back plate 11 is sealed to this substrate 1, the container is evacuated through an exhaust pipe 13, sealed, and the inside is maintained at a high vacuum, thereby completing the fluorescent display tube of the present invention. Note that the present invention is not limited to the embodiments shown in the drawings and described above, but can be implemented with various changes without changing the gist of the present invention.
For example, although a static drive pattern is shown in the embodiment, the present invention can also be practiced with a dynamic drive pattern. (F) Effects of the Invention As explained above, in the present invention, a phosphor obtained by adding a conductive substance to a ZnO:Zn phosphor is deposited on an anode segment having a gap, so that an anode current is not applied to the anode. When emitting light, current flows through the phosphor layer deposited in the gap without causing a voltage drop, so it is possible to emit light in the same way as the phosphor layer on the anode conductor. Therefore, in a front-emission display tube that displays only the light emitted from the gaps, it is possible for each gap to emit light uniformly, so that the entire segment can also emit light uniformly, resulting in an effect that the display quality is excellent. Furthermore, since the resistance is small, it is possible to pass a large amount of anode current, which has the effect of emitting light with higher brightness than conventional fluorescent display tubes using ZnO:Zn phosphors. Furthermore, since the resistance of the phosphor is reduced, even if the gap width of the mesh is increased, the light can be emitted uniformly. Since the aperture ratio of the anode conductor of each segment of the front-emitting fluorescent display tube can be increased, the amount of light emitted toward the viewer increases, and from this point of view as well, there is an effect that high brightness is possible.
第1図は、従来の前面発光形の陽極基板の要部
拡大縦断面図、第2図は、本発明の低速電子線用
蛍光体の拡大図、第3図Aは、本発明の蛍光表示
管に用いられる陽極基板の説明図、第3図Bは、
比較するために陽極導体を全面に設けた陽極基板
の例の説明図、第4図は、本発明の陽極基板の要
部平面図、第5図は、本発明の蛍光表示管の一部
を破断した平面図、第6図は、第5図のX−X線
での縦断面図、第7図は、本発明の蛍光体の導電
物質と導電率および発光効率の関係を示すグラ
フ、第8図は、本発明の蛍光体のアノード電圧と
相対輝度の関係を示すグラフ、第9図は、本発明
の蛍光体のIn2O3量と相対輝度の関係を示すグラ
フである。
1……基板、2……陽極導体、3……間隙部、
4……蛍光体層、5……ZnO:Zn蛍光体、6……
導電物質。
FIG. 1 is an enlarged vertical cross-sectional view of the main part of a conventional front-emission type anode substrate, FIG. 2 is an enlarged view of the low-speed electron beam phosphor of the present invention, and FIG. 3A is a fluorescent display of the present invention. An explanatory diagram of the anode substrate used in the tube, FIG. 3B, is
For comparison, an explanatory diagram of an example of an anode substrate provided with an anode conductor on the entire surface, FIG. 4 is a plan view of the main part of the anode substrate of the present invention, and FIG. 5 is a diagram showing a part of the fluorescent display tube of the present invention. FIG. 6 is a broken plan view, and FIG. 6 is a vertical cross-sectional view taken along line X-X in FIG. 5. FIG. FIG. 8 is a graph showing the relationship between the anode voltage and relative brightness of the phosphor of the present invention, and FIG. 9 is a graph showing the relationship between the amount of In 2 O 3 and relative brightness of the phosphor of the present invention. 1...Substrate, 2...Anode conductor, 3...Gap part,
4...phosphor layer, 5...ZnO:Zn phosphor, 6...
conductive material.
Claims (1)
面に蛍光体層の被着された陽極に熱陰極から放出
された電子を射突させて、前記蛍光体層を励起発
光させ透光性基板を通して表示を得る蛍光表示管
において、導電性薄膜でメツシユ状、くし歯状、
ストライプ状等の間隙を有するように前記透光性
基体上に被着した陽極導体と、低速電子線の射突
により励起発光するZnO:Zn蛍光体に対して0.01
重量%〜5重量%の導電性物質の微粒子を添加
し、前記ZnO:Zn蛍光体の表面に導電性物質を被
着させた低速電子線用蛍光体を前記陽極導体およ
び前記間隙上に被着形成させたことを特徴とする
蛍光表示管。1. Electrons emitted from the hot cathode are made to strike an anode provided on one surface of a light-transmitting insulating substrate and having a phosphor layer adhered to the upper surface, thereby exciting the phosphor layer to emit light and transmitting light. In fluorescent display tubes that obtain display through a conductive substrate, conductive thin films are formed into mesh-like, comb-like,
0.01 for the ZnO:Zn phosphor that is excited to emit light by impacting the anode conductor on the light-transmitting substrate with gaps such as stripes and a low-velocity electron beam.
A phosphor for low-speed electron beams, in which fine particles of a conductive substance are added in an amount of 5% by weight to 5% by weight, and a conductive substance is coated on the surface of the ZnO:Zn phosphor, is deposited on the anode conductor and the gap. A fluorescent display tube characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21598082A JPS59105254A (en) | 1982-12-08 | 1982-12-08 | Low velocity electron ray phosphor and fluorescent character display tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21598082A JPS59105254A (en) | 1982-12-08 | 1982-12-08 | Low velocity electron ray phosphor and fluorescent character display tube |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59105254A JPS59105254A (en) | 1984-06-18 |
| JPS6145347B2 true JPS6145347B2 (en) | 1986-10-07 |
Family
ID=16681415
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21598082A Granted JPS59105254A (en) | 1982-12-08 | 1982-12-08 | Low velocity electron ray phosphor and fluorescent character display tube |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59105254A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07778B2 (en) * | 1985-09-12 | 1995-01-11 | 松下電子工業株式会社 | Picture tube |
| JPS62126528A (en) * | 1985-11-26 | 1987-06-08 | Ise Electronics Corp | Fluorescent character display tube |
| JPH0739576B2 (en) * | 1986-01-10 | 1995-05-01 | 化成オプトニクス株式会社 | Surface treated phosphor for cathode ray tube |
| JPH0747733B2 (en) * | 1988-12-28 | 1995-05-24 | 双葉電子工業株式会社 | Blue light emitting phosphor |
| JP2786131B2 (en) * | 1995-08-30 | 1998-08-13 | 鹿児島日本電気株式会社 | Fluorescent display tube |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55131083A (en) * | 1979-03-30 | 1980-10-11 | Nec Corp | Luminescent material |
| JPS55145788A (en) * | 1979-05-02 | 1980-11-13 | Toshiba Corp | Luminescent composition |
-
1982
- 1982-12-08 JP JP21598082A patent/JPS59105254A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59105254A (en) | 1984-06-18 |
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