JPS6149779B2 - - Google Patents
Info
- Publication number
- JPS6149779B2 JPS6149779B2 JP52016956A JP1695677A JPS6149779B2 JP S6149779 B2 JPS6149779 B2 JP S6149779B2 JP 52016956 A JP52016956 A JP 52016956A JP 1695677 A JP1695677 A JP 1695677A JP S6149779 B2 JPS6149779 B2 JP S6149779B2
- Authority
- JP
- Japan
- Prior art keywords
- metal
- glass
- electrode
- alloy
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011521 glass Substances 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 13
- 229910045601 alloy Inorganic materials 0.000 claims description 11
- 239000000956 alloy Substances 0.000 claims description 11
- 238000002844 melting Methods 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 229910000464 lead oxide Inorganic materials 0.000 description 6
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- -1 for example Chemical compound 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Gas-Filled Discharge Tubes (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
本発明は表示パネルの製造方法に関する。
表示パネル、例えばガス放電パネル、EL表示
パネル、平板表示パネル、平板状電子線表示パネ
ル等においては、二枚のガラス基板上にそれぞれ
互いに直交するごとく真空蒸着またはスパツタリ
ング等により、電極が設けられ、その内部を画像
表示領域とすべく二枚のガラス基板の縁部が低融
点ガラスにより封着される。
しかるに、従来のこのような方法により作られ
た表示パネルでは、電極が封着時その封着温度に
おいて低融点ガラスと化学反応し断線する欠点が
あつた。
その原因は、低融点ガラスには通常酸化鉛が約
70%も含まれており、一般にこの酸化鉛の結合自
由エネルギーが大きいことにあり、例えば電極金
属としてアルミニウムまたはニツケルを使用した
場合、封着温度約400〜500℃において、酸化アル
ミニウムまたは酸化ニツケルが生成され、酸化鉛
が還元されることによるものであることがわかつ
た。
本発明はこのような点にかんがみてなされたも
のであり、以下その実施例を図面とともに説明す
る。
第1図において、まず、厚さが400μmのソー
ダガラスからなるガラス基板1上に真空蒸着、ス
パツタリング、印刷法などにより厚さが0.5μの
アルミニウムからなる電極2を形成する。電極2
としてはアルミニウムの他に、アルミニウムを主
成分とする合金、例えばアルミニウム―銅合金、
ニツケル、鉄―ニツケル合金などのガラス基板1
と、接着しやすく、またガラス封着温度400〜500
℃において大気中で酸化し難い金属であることが
望ましい。また、酸化インジウム、酸化スズなど
の透明電極であつてもよい。次に、後述する低融
点ガラスの接着温度における金属酸化物の結合自
由エネルギーが酸化鉛の結合自由エネルギーより
小さい金属例えば厚さ0.3μの銅またはこの金属
を主成分とする合金3を前記と同様の方法によつ
て電極2上に被覆する。この金属としては銅の他
に、例えば白金、パラジウムが使用される。しか
るのち、前記金属、または合金3に酸化鉛を主成
分とする低融点ガラス4(例えば商品名岩崎ガラ
ス#TO29)を厚さ10μにして接触させ、ガラス
基板1とこれに対向するガラス基板5とを封着す
る。この低融点ガラス4の熱膨張係数は、ガラス
基板1,5の熱膨張係数とほぼ等しいものがよ
い。
かくして得られた表示パネルは、電極2の断
線、剥離等が全くみられず、きわめて良好であつ
た。
なお、上記金属または合金3として、大気中に
おいてガラス封着温度で酸化されやすいもの、例
えば銅、パラジウムなどを使用する場合は、第2
図に示されているように、前記金属または合金3
上に、酸化膜、例えば酸化シリコン膜、窒化膜、
弗化膜、金属膜、例えばアルミニウム膜などの酸
化防止膜6を形成するのがよい。このようにする
と、金属または合金3が酸化して黒ずむのが防止
され、外観がきれいなものとなる。
上記実施例においては、前記金属または合金と
して銅(酸化銅の450℃における結合自由エネル
ギー―34Kcal/g・atom)の例を説明したが、
本発明においては酸化鉛の結合自由エネルギー―
37Kcal/g・atomより小さな結合エネルギーを
持つた金属またはこれを主成分とする合金であれ
ばよく、その金属酸化物の例を第1表に示す。
The present invention relates to a method for manufacturing a display panel. In display panels such as gas discharge panels, EL display panels, flat display panels, flat electron beam display panels, etc., electrodes are provided on two glass substrates by vacuum deposition or sputtering so as to be perpendicular to each other. The edges of the two glass substrates are sealed with low melting point glass so that the inside thereof becomes an image display area. However, conventional display panels manufactured by such a method have the disadvantage that the electrodes chemically react with the low melting point glass at the sealing temperature during sealing, resulting in disconnection. The reason for this is that low melting point glass usually contains about lead oxide.
This is due to the large binding free energy of lead oxide. For example, when aluminum or nickel is used as the electrode metal, aluminum oxide or nickel oxide will be absorbed at a sealing temperature of approximately 400 to 500°C. It was found that this was caused by the reduction of lead oxide. The present invention has been made in view of these points, and embodiments thereof will be described below with reference to the drawings. In FIG. 1, first, an electrode 2 made of aluminum with a thickness of 0.5 μm is formed on a glass substrate 1 made of soda glass with a thickness of 400 μm by vacuum evaporation, sputtering, printing, or the like. Electrode 2
In addition to aluminum, alloys whose main component is aluminum, such as aluminum-copper alloys,
Glass substrate 1 such as nickel or iron-nickel alloy
It is easy to bond, and the glass sealing temperature is 400~500.
It is desirable to use a metal that is difficult to oxidize in the atmosphere at ℃. Alternatively, a transparent electrode such as indium oxide or tin oxide may be used. Next, a metal whose binding free energy of the metal oxide is smaller than that of lead oxide at the bonding temperature of the low-melting point glass described later, such as copper with a thickness of 0.3μ or alloy 3 mainly composed of this metal, is added in the same manner as above. The electrode 2 is coated by the method described in the following. As this metal, in addition to copper, for example, platinum or palladium is used. After that, a low-melting glass 4 (for example, trade name Iwasaki Glass #TO29) having a thickness of 10 μm and having a lead oxide as a main component is brought into contact with the metal or alloy 3, and the glass substrate 1 and the glass substrate 5 opposite thereto are made. and seal it. The coefficient of thermal expansion of this low melting point glass 4 is preferably approximately equal to the coefficient of thermal expansion of the glass substrates 1 and 5. The thus obtained display panel was in extremely good condition with no breakage or peeling of the electrodes 2 at all. In addition, when using a metal or alloy 3 that is easily oxidized at the glass sealing temperature in the atmosphere, such as copper or palladium, the second
As shown in the figure, the metal or alloy 3
On top, an oxide film, such as a silicon oxide film, a nitride film,
It is preferable to form an anti-oxidation film 6 such as a fluoride film, a metal film, for example an aluminum film. This prevents the metal or alloy 3 from oxidizing and turning dark, resulting in a clean appearance. In the above example, an example of copper (binding free energy of copper oxide at 450°C - 34 Kcal/g・atom) was explained as the metal or alloy.
In the present invention, the binding free energy of lead oxide -
Any metal having a binding energy smaller than 37 Kcal/g·atom or an alloy containing this as a main component may be used. Examples of such metal oxides are shown in Table 1.
【表】
もし、本発明のような方法を採らず、一般に結
合自由エネルギーの大きい金属、例えば金、銀、
銅などをガラス基板上に直接形成してこれを電極
とした場合には、これとガラス基板との接着が弱
いため、ガラス封着後に電極がガラス基板から剥
離して、ガス漏れを生じたり、電極が低融点ガラ
スの流動に伴つて断線するという、欠点を招くも
のである。
以上説明したように、本発明は表示パネルの電
極の断線、剥離などを確実に防止することができ
る。[Table] If you do not use the method of the present invention and generally use metals with high binding free energy, such as gold, silver,
If copper or other material is formed directly on a glass substrate and used as an electrode, the adhesion between this and the glass substrate is weak, so the electrode may peel off from the glass substrate after glass sealing, resulting in gas leakage. This results in the disadvantage that the electrodes break due to the flow of the low melting point glass. As described above, the present invention can reliably prevent disconnection, peeling, etc. of the electrodes of the display panel.
第1図は本発明の方法によつて作られた表示パ
ネルの一例の断面図、第2図は同じく表示パネル
の他の例の断面図である。
1……ガラス基板、2……電極、3……金属ま
たは合金。
FIG. 1 is a sectional view of an example of a display panel made by the method of the present invention, and FIG. 2 is a sectional view of another example of the display panel. 1... Glass substrate, 2... Electrode, 3... Metal or alloy.
Claims (1)
極を形成する工程と、酸化鉛を含有する低融点ガ
ラスの封着温度における金属酸化物の結合自由エ
ネルギーが前記酸化鉛の結合自由エネルギーより
小さな金属またはこの金属を主成分とする合金を
前記電極上に被覆する工程と、前記金属または前
記合金に前記低融点ガラスを接触させて前記二枚
のガラス基板を封着する工程とを備えたことを特
徴とする表示パネルの製造方法。1. A step of forming an electrode on at least one of the two glass substrates, and a metal or It is characterized by comprising the steps of: coating the electrode with an alloy containing this metal as a main component; and bringing the low melting point glass into contact with the metal or the alloy to seal the two glass substrates together. A method for manufacturing a display panel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1695677A JPS53101974A (en) | 1977-02-17 | 1977-02-17 | Manufacture of display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1695677A JPS53101974A (en) | 1977-02-17 | 1977-02-17 | Manufacture of display panel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53101974A JPS53101974A (en) | 1978-09-05 |
| JPS6149779B2 true JPS6149779B2 (en) | 1986-10-31 |
Family
ID=11930552
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1695677A Granted JPS53101974A (en) | 1977-02-17 | 1977-02-17 | Manufacture of display panel |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS53101974A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050077961A (en) * | 2004-01-30 | 2005-08-04 | 삼성에스디아이 주식회사 | Flat panel display device and process of the same |
-
1977
- 1977-02-17 JP JP1695677A patent/JPS53101974A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53101974A (en) | 1978-09-05 |
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