JPS6149835B2

JPS6149835B2 -

Info

Publication number: JPS6149835B2
Application number: JP3847277A
Authority: JP
Inventors: Takashi Kuze; Masato Sakai; Shoji Makuchi; Hirozo Sugai
Original assignee: Tokyo Shibaura Electric Co Ltd
Current assignee: Toshiba Corp
Priority date: 1977-04-06
Filing date: 1977-04-06
Publication date: 1986-10-31
Also published as: JPS53124758A

Description

[Detailed description of the invention]

本発明はたとえば集積回路などの半導体装置や
基板上に抵抗要素を形成した感熱基板などの、電
気要素、回路要素を形成載置するための電気装置
用基板の改良に関する。この種電気装置用基板に金属製基体を用いるこ
とはすでに知られている。しかし、その組成と得
られる基板の特性との関係は十分に明らかにされ
ていない。本発明はたとえば第１図に示されるように金属
基板１として、クロム３〜８重量％、ニツケル40
〜48重量％を含む鉄合金を使用し、電気的絶縁性
を付与するため、該合金基体表面に前記合金の酸
化層２を形成してなるものである。本発明基板は基体合金組成を上記の合金に限定
することにより種々の利点を有する。たとえば、耐熱性及び耐食性にすぐれている点
である。この点は電気装置の製造、使用等におけ
る各種の環境に耐えることができることを意味す
る。たとえば使用温度は900℃以上にても可能で
あり、酸洗等の処理もできる。また、熱膨張係数が小さいので、熱的変化に対
して強く、電気装置の製造、使用に好ましい。また、加工性が良いので様々な形状に対応でき
る。さらにまた、熱伝導性にすぐれているので大規
模な集積回路や感熱ヘツドなど熱放散性を要求さ
れる分野での使用に好適する。この熱伝導性の良
好な点は基体合金層、酸化層の厚さをそれぞれ任
意に選択することによつて熱放散性を調節するこ
とができることを意味し、したがつて容易に任意
の熱的特性をもつた基板を製造できる。また、ろう付性、溶接性にもすぐれているので
電気装置の組立てに都合よい。さらに、機械的強度も良いので、基板基体とし
て好ましい。本発明基板の基体表面酸化層は合金をたとえば
大気中、湿潤水素雰囲気中などの含酸素雰囲気中
で高温酸化することにより形成することが好まし
い。このように処理すると、均一な酸化層を得る
ことができ、電気装置用として好ましい。このよ
うに好ましい酸化層が形成されるのは、基体合金
組成に起因するところが大きいと考えられる。高温酸化処理の好ましい条件を第１表に示す。 The present invention relates to improvements in substrates for electrical devices on which electrical elements and circuit elements are formed and mounted, such as semiconductor devices such as integrated circuits and heat-sensitive substrates on which resistive elements are formed. It is already known to use metal substrates for substrates for electrical devices of this type. However, the relationship between its composition and the properties of the resulting substrate has not been fully clarified. In the present invention, for example, as shown in FIG.
An iron alloy containing up to 48% by weight is used, and an oxide layer 2 of the alloy is formed on the surface of the alloy substrate to provide electrical insulation. The substrate of the present invention has various advantages by limiting the base alloy composition to the above-mentioned alloy. For example, it has excellent heat resistance and corrosion resistance. This means that it can withstand various environments in the manufacture and use of electrical devices. For example, it can be used at a temperature of 900°C or higher, and treatments such as pickling can also be performed. Furthermore, since it has a small coefficient of thermal expansion, it is resistant to thermal changes and is suitable for manufacturing and using electrical devices. In addition, it has good workability and can be made into various shapes. Furthermore, since it has excellent thermal conductivity, it is suitable for use in fields where heat dissipation is required, such as large-scale integrated circuits and thermal heads. This good thermal conductivity means that the heat dissipation property can be adjusted by arbitrarily selecting the thickness of the base alloy layer and the oxide layer. It is possible to manufacture substrates with specific characteristics. It also has excellent brazing and welding properties, making it convenient for assembling electrical equipment. Furthermore, it has good mechanical strength, so it is preferable as a substrate substrate. The substrate surface oxidation layer of the substrate of the present invention is preferably formed by oxidizing the alloy at high temperature in an oxygen-containing atmosphere such as the air or a wet hydrogen atmosphere. This treatment makes it possible to obtain a uniform oxidized layer, which is preferable for use in electrical devices. The formation of such a preferable oxide layer is considered to be largely due to the base alloy composition. Table 1 shows preferable conditions for high temperature oxidation treatment.

【表】形成される酸化層はCr₂O₃、Fe₂O₃、TiO₂、
Al₂O₃を主体とするもので、ち密かつ比抵抗の大
きなものである。たとえば酸化層の比抵抗は10⁶〜10¹³Ωcmに調
整でき、密度は真比重の80％以上さらには95％程
度にまで調整できる。この酸化層の厚さは２μｍ以上好ましくは５〜
30μｍにするとよい。この程度の厚さであれば電
気装置用の基板として十分な絶縁性が得られると
ともに、本発明金属基板としての特異性も十分に
発揮される。この酸化層の表面粒度は平坦である程望ましい
が、表面粗さ３μ以下程度であれば使用可能であ
ろう。１μ以下ならばさらに好ましい。本発明基板の応用として多層化ができる。たと
えば第２図において３は金属層、４が酸化層であ
る。本発明基板の基体合金のさらに好ましい組成と
して次の第２表に示す各種のものが推奨される。[Table] The oxide layers formed are Cr ₂ O ₃ , Fe ₂ O ₃ , TiO ₂ ,
It is mainly composed of Al ₂ O ₃ and is dense and has a high specific resistance. For example, the specific resistance of the oxide layer can be adjusted to 10 ⁶ to 10 ¹³ Ωcm, and the density can be adjusted to 80% or more of the true specific gravity or even about 95%. The thickness of this oxide layer is 2 μm or more, preferably 5 μm or more.
It is recommended that the thickness be 30 μm. With a thickness of this level, sufficient insulation properties can be obtained as a substrate for an electrical device, and the uniqueness of the metal substrate of the present invention can be fully exhibited. It is desirable that the surface grain size of this oxide layer is as flat as possible, but it may be usable if the surface roughness is about 3 μm or less. It is more preferable if it is 1μ or less. As an application of the substrate of the present invention, it can be multilayered. For example, in FIG. 2, 3 is a metal layer and 4 is an oxide layer. As more preferable compositions of the base alloy of the substrate of the present invention, various compositions shown in the following Table 2 are recommended.

【表】第２表に示される成分の範囲限定理由は次のと
おりである。まず、クロム及びニツケルは前記本発明基板の
基体の特徴を保持するためにそれぞれ第２表に示
される値が好ましい。さらに好ましくはクロム４
〜７重量％、ニツケル41〜46重量％がよい。最も好ましくはクロム５〜６重量％、ニツケル
41〜43重量％である。アルミニウムは酸化層と基体合金との付着性を
さらに強固にするとともに、酸化層の電気抵抗を
あげる効果を生ぜしめる。たとえば第２表(1)の合
金を用いた場合の酸化膜の電気抵抗は10⁸〜10¹³
Ωcm程度になる。チタンはアルミニウムと同様に酸化層と基体合
金との付着性を改善するとともに酸化層の電気抵
抗をあげる。たとえば第２表(2)の合金を用いた場
合の酸化膜の電気抵抗は10⁸〜10¹¹Ωcm程度にな
る。酸化層と基体合金の付着性の強固な点は、種々
の処理、使用がなされる電気装置用基板にとつて
有利な点である。アルミニウムとチタンを複合で添加した場合は
酸化膜の電気抵抗は10⁷〜10¹⁰Ωcm程度になる。アルミニウム、チタンのさらに好ましい範囲は
アルミニウム0.2〜２重量％、チタン0.2〜1.0重量
％であり、最も好ましくはアルミニウム0.2〜１
重量％、チタン0.2〜0.7重量％である。[Table] The reason for limiting the range of components shown in Table 2 is as follows. First, chromium and nickel preferably have the values shown in Table 2, respectively, in order to maintain the characteristics of the substrate of the present invention. More preferably chromium 4
-7% by weight and 41-46% by weight of nickel. Most preferably 5-6% by weight of chromium, nickel
It is 41-43% by weight. Aluminum further strengthens the adhesion between the oxide layer and the base alloy, and has the effect of increasing the electrical resistance of the oxide layer. For example, when using the alloy shown in Table 2 (1), the electrical resistance of the oxide film is 10 ⁸ to 10 ¹³
It will be about Ωcm. Titanium, like aluminum, improves the adhesion between the oxide layer and the base alloy and increases the electrical resistance of the oxide layer. For example, when the alloy shown in Table 2 (2) is used, the electrical resistance of the oxide film is approximately 10 ⁸ to 10 ¹¹ Ωcm. The strong adhesion of the oxide layer to the substrate alloy is advantageous for electrical device substrates that undergo a variety of processing and uses. When a combination of aluminum and titanium is added, the electrical resistance of the oxide film is approximately 10 ⁷ to ^{10 10} Ωcm. A more preferable range of aluminum and titanium is 0.2 to 2% by weight of aluminum and 0.2 to 1.0% by weight of titanium, most preferably 0.2 to 1% of aluminum.
% by weight, titanium 0.2-0.7% by weight.

[Brief explanation of the drawing]

第１図及び第２図は本発明電気装置用基板の断
面図である。１……基体、２，４……酸化層、３……金属
層。 1 and 2 are cross-sectional views of a substrate for an electrical device according to the present invention. 1... Base body, 2, 4... Oxide layer, 3... Metal layer.

Claims

[Scope of Claims] 1. A base made of an iron alloy containing 3-8% by weight of chromium and 40-48% by weight of nickel, and an alloy oxide layer mainly composed of Cr ₂ O ₃ formed on the surface of the base by high-temperature oxidation. A board for an electrical device comprising: 2. The electrical device substrate according to claim 1, wherein the base alloy is an alloy consisting of 3 to 8% by weight of chromium, 40 to 48% by weight of nickel, 0.1 to 3.0% by weight of aluminum, and the balance iron. board for. 3. The electrical device substrate according to claim 1, wherein the base alloy is an alloy consisting of 3 to 8% by weight of chromium, 40 to 48% by weight of nickel, 0.1 to 1.5% by weight of titanium, and the balance iron. board for. 4. In the electrical device substrate according to claim 1, the base alloy contains 3 to 8% by weight of chromium, 40 to 48% by weight of nickel, 0.1 to 2.0% by weight of aluminum, 0.1 to 1.0% by weight of titanium, and the balance iron. A substrate for electrical devices made of an alloy of