JPS6152226B2 - - Google Patents
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- Publication number
- JPS6152226B2 JPS6152226B2 JP55052105A JP5210580A JPS6152226B2 JP S6152226 B2 JPS6152226 B2 JP S6152226B2 JP 55052105 A JP55052105 A JP 55052105A JP 5210580 A JP5210580 A JP 5210580A JP S6152226 B2 JPS6152226 B2 JP S6152226B2
- Authority
- JP
- Japan
- Prior art keywords
- filament
- amount
- phase
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- value
- Prior art date
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
- C23C10/28—Solid state diffusion of only metal elements or silicon into metallic material surfaces using solids, e.g. powders, pastes
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Description
本発明はすぐれた可撓性と高い臨界電流値を併
せ有するNb3Sn系超電導材を簡易経済的に製造す
る方法に関する。
近年、核融合装置や原子核研究用の大型加速装
置などに超電導マグネツトを応用することが行な
われ、高磁界における使用が要請されるようにな
つたことにともない、合金系よりも一般に高い臨
界電流値を示す化合物系超電導材が注目されるよ
うになつた。
化合物系超電導材の実用上での隘路とみられて
きたものは、第一に製造が厄介であることであ
り、表面拡散法、気相還元法、プラズマスプレー
法、複合加工法などいろいろの製造が試みられて
はいるが、いずれも複雑かつ面倒なものであつ
た。
さらに第二の隘路ともいえるものは化合物に特
有な性質である可撓性に劣るという点である。
上記実情に鑑みて、発明者らは先にきわめて簡
易経済的に高い可撓性を有するNb3Sn系超電材を
製造する方法を提案し、特願昭55−10537として
すでに出願がある。
本発明は上記発明の改良に係り、第3元素とし
てGaを添加することにより臨界電流値Jcを一層
高め得たNb3Sn系超電導材の製造方法を提供しよ
うとするものである。
以下に本発明について順次詳細に説明する。
まずNb15〜70重量%、Ga0.2〜8重量%よりな
るCu−Nb−Ga合金を溶解鋳造する。これにより
Cuマトリツクス中にNbのデンドライトを微細に
晶出せしめる。この場合高い臨界電流値Jcを得る
ためには晶出Nbの平均離間距離が6μ以下とな
るように均質微細な晶出を行なわしめることが望
まれる。しかして、Nbの量が15%以下では稀薄
にすぎJc値の向上に有効に作用しないため除外さ
れる。また70%以上では融点が急激に高くなり同
じくJc特性を向上せしめる上で必要な均質微細な
鋳造組織を得ることがきわめて困難となる上マト
リツクスとなる銅の容積比が過少となり、いわゆ
る安定化効果が保持されないため除外される。
Gaについては一部がCu中に固溶し、一部Nb中に
も固溶するものと考えられるが、その量が0.2%
以下ではJc特性の上昇に寄与しない。
また8%以上と多量になると加工性が急激に悪
くなり、Nb相を後述するフイラメント相になる
まで加工することがきわめて困難となるので除外
される。
本発明が組成範囲としているNb15〜70%Ga0.2
〜8%よりなるCu−Nb−Ga合金は通常のアーク
溶解炉やビーム溶解炉などによつて普通に溶解す
ることができる。この場合前記した6μ以下の平
均離間距離となるようなNbデンドライト相を得
るためには急冷やある種の元素の微少源加などに
よつて達成可能である。
上記によつて溶解鋳造された素材は延伸加工が
行なわれ、晶出したNb相を母材とともに延伸せ
しめてNbフイラメントに加工される。
しかして、この場合の加工度は99.5%以上であ
ることが望ましい。すなわち加工度がこれ以下で
はJc値の顕著な上昇がみられないからである。お
そらくこのような高い加工度によつてJc値が上昇
するのは、前記デンドライトの平均離間距離とも
関連し、後述する拡散処理によつて生成された
Nb3Snフイラメントの近接効果が如実に作用して
くるためと考えられる。
来つて応用される分野での要請がきびしい条件
にあれば加工度は必然に高くせざるを得ないこと
になる。
しかしながらここで注目されるべき本発明の顕
著な特徴は、このような高い加工がきわめて加工
性の良好なCu−Nb−Ga合金という形で行なわれ
後述のNb3Sn化が行なわれたのちはもはや延伸加
工は必要としないという点である。従来は中途に
熱処理を入れる必要上いずれもNb3Snを生成せし
めながらこれを延伸することを行なつていたから
当然のことながら加工し難い化合物を延伸する結
果となり大きな困難を伴う結果となつていたので
あり、その点を不要にできた本発明はその意見に
おいて画期的ということができる。
上記のように延伸加工せられたCu−Nb−Ga合
金素材には、内部のNbフイラメントと反応して
Nb3Snを生成せしめ得る量のSnがメツキされる。
現実にはSnメツキ量と臨界電流値Jcとの関係を
プロツトしてみるとSnメツキ量が所定量に達す
るまではJcは次第に上昇し、所定量以上になると
Jcはもはや飽和するという現象がみられる。この
飽和した近傍が最適量のSn量と考えられる。
このSnメツキはその後拡散熱処理を行ない内
部のNbフイラメントと反応して当該Nbフイラメ
ントをNb3Snフイラメントに変換し素線全体を超
電導材料に転換せしめるわけであるが、このよう
な目的のための最終拡散処理を行なう前により低
温域である240〜500℃の範囲で20〜100h程度の
予備熱処理を施すことが望ましい。
この予備処理はメツキしたSnと母材との間に
なじみを与え後続する500〜700℃といつた高い温
度での拡散処理の際に表面で溶融したSnがだれ
を生じ偏心状態となつて後の拡散が不均質化する
のを防止するものであるが、この予備処理は後述
するようにJc特性を向上させる効果も明らかであ
るからより臨界条件のきびしい状況において使用
する材料には、この予備処理を行う方がよいので
ある。
NbフイラメントNb3Snフイラメントとするた
めの最終的な拡散処理は500〜700℃で行なわれ
る。500℃以下では温度が低きにすぎ、拡散がき
わめて悪くJc値の上昇がみられないので除外され
る。反対に700℃以上と高くなりすぎても前記メ
ツキ層が不安定不均質となつたりフイラメントの
形状が不安定となつたり、さらには生成した
Nb3Snの結晶成長が生じいわゆるピン止め効果が
阻害されるためにJc値は逆に低下してしまうため
除外される。
以上によつて本発明に係るNb3Sn系超電導材の
製造が達成されるが、その過程をみると溶解、鋳
造、メツキ、拡散という日常一般の金属材料の通
常工程を単につらねているにすぎず、なんらの特
別工程をも含まないものであり、その簡易経済性
は前述した従来法の比ではないことがわかるであ
ろう。しかも、本発明に係る製造方法をもつてす
ることで、Nb3Sn系超電導材としての一般特性を
充分有する材料を入手できることは明らかであ
り、それはGa添加によつて一層すぐれた特性を
確保することが可能となることが判明した。
つぎにそれらについて実施例により詳しく説明
する。
実施例 1
第1表は本発明の実施例に供された供試材の組
成を示すものである。但しSnについては電気メ
ツキのたねに使用するSnの重量減によつて求
め、Gaは公称値を示した。
The present invention relates to a simple and economical method for manufacturing a Nb 3 Sn-based superconducting material that has both excellent flexibility and a high critical current value. In recent years, superconducting magnets have been applied to nuclear fusion devices and large accelerators for nuclear research, and as they are required to be used in high magnetic fields, they generally have higher critical current values than alloy systems. Compound-based superconducting materials that exhibit The bottleneck in the practical use of compound-based superconducting materials is firstly that manufacturing is complicated, and various manufacturing methods such as surface diffusion method, gas phase reduction method, plasma spray method, and composite processing method have been proposed. Although attempts have been made, they have all been complicated and cumbersome. Furthermore, the second bottleneck is that they have poor flexibility, which is a characteristic characteristic of compounds. In view of the above-mentioned circumstances, the inventors have previously proposed a method for manufacturing a highly flexible Nb 3 Sn-based superelectric material in an extremely simple and economical manner, and an application has already been filed for this method as Japanese Patent Application No. 10537/1983. The present invention relates to an improvement on the above-mentioned invention, and aims to provide a method for producing a Nb 3 Sn-based superconducting material in which the critical current value Jc can be further increased by adding Ga as a third element. The present invention will be explained in detail below. First, a Cu-Nb-Ga alloy consisting of 15 to 70% by weight of Nb and 0.2 to 8% by weight of Ga is melted and cast. This results in
Finely crystallized Nb dendrites in the Cu matrix. In this case, in order to obtain a high critical current value Jc, it is desirable to perform homogeneous and fine crystallization so that the average distance between the crystallized Nb is 6 μm or less. However, if the amount of Nb is less than 15%, it is too dilute and does not effectively improve the Jc value, so it is excluded. Moreover, if it exceeds 70%, the melting point will rise rapidly, and it will be extremely difficult to obtain the homogeneous and fine casting structure necessary to improve Jc properties.The volume ratio of copper, which will form the upper matrix, will be too small, resulting in the so-called stabilizing effect. is excluded because it is not retained.
It is thought that some of Ga is dissolved in Cu and some in Nb, but the amount is 0.2%.
If it is less than that, it will not contribute to the increase in Jc characteristics. Furthermore, if the amount is 8% or more, the workability deteriorates rapidly, and it becomes extremely difficult to process the Nb phase into a filament phase, which will be described later, so it is excluded. The composition range of the present invention is Nb15-70%Ga0.2
A Cu--Nb--Ga alloy consisting of ~8% can be conventionally melted in a conventional arc melting furnace or beam melting furnace. In this case, in order to obtain the Nb dendrite phase having an average separation distance of 6 μ or less as described above, it can be achieved by rapid cooling or by adding a small amount of a certain element. The material melted and cast as described above is subjected to drawing processing, and the crystallized Nb phase is drawn together with the base material to form a Nb filament. Therefore, it is desirable that the degree of processing in this case is 99.5% or more. In other words, if the working degree is less than this, no significant increase in the Jc value is observed. The increase in the Jc value due to such a high degree of processing is probably related to the average separation distance of the dendrites, which are generated by the diffusion process described below.
This is thought to be because the proximity effect of the Nb 3 Sn filament comes into play. If the requirements in the field in which it will be applied are severe, the degree of processing will inevitably have to be increased. However, the remarkable feature of the present invention that should be noted here is that such high processing is performed in the form of a Cu-Nb-Ga alloy with extremely good workability, and after the Nb 3 Sn formation described below is performed. The point is that stretching is no longer necessary. Conventionally, it was necessary to perform heat treatment in the middle of the process, so Nb 3 Sn was produced and then stretched, which of course resulted in stretching a compound that was difficult to process, resulting in great difficulties. However, the present invention can be said to be revolutionary in that it makes this point unnecessary. The Cu-Nb-Ga alloy material drawn as described above reacts with the internal Nb filament.
An amount of Sn that can generate Nb 3 Sn is plated.
In reality, when plotting the relationship between the amount of Sn plating and the critical current value Jc, Jc gradually increases until the amount of Sn plating reaches a predetermined amount, and when it exceeds the predetermined amount,
There is a phenomenon that Jc is already saturated. This saturated vicinity is considered to be the optimal amount of Sn. This Sn plating is then subjected to diffusion heat treatment and reacts with the Nb filament inside, converting the Nb filament into a Nb 3 Sn filament and converting the entire wire into a superconducting material. It is desirable to perform preliminary heat treatment for about 20 to 100 hours at a lower temperature range of 240 to 500° C. before performing the diffusion treatment. This preliminary treatment allows the plated Sn to conform to the base metal, and during the subsequent diffusion treatment at high temperatures of 500 to 700℃, the molten Sn on the surface drips and becomes eccentric. This pretreatment prevents the diffusion of It is better to process it. The final diffusion treatment to form Nb filaments and Nb 3 Sn filaments is carried out at 500-700°C. Below 500°C, the temperature is too low, diffusion is extremely poor, and no increase in Jc value is observed, so it is excluded. On the other hand, if the temperature is too high, above 700°C, the plating layer may become unstable and inhomogeneous, the shape of the filament may become unstable, or even the formation of
It is excluded because crystal growth of Nb 3 Sn occurs and the so-called pinning effect is inhibited, resulting in a decrease in the Jc value. Through the above steps, the production of the Nb 3 Sn-based superconducting material according to the present invention is achieved, but when looking at the process, it is simply a continuation of the usual processes of melting, casting, plating, and diffusion, which are commonly used in everyday metal materials. First, it does not involve any special steps, and it will be understood that its simplicity and economic efficiency is not comparable to the conventional method described above. Moreover, it is clear that by using the manufacturing method according to the present invention, it is possible to obtain a material that has sufficient general characteristics as a Nb 3 Sn-based superconducting material, and it is possible to obtain a material that has sufficient general characteristics as a Nb 3 Sn-based superconducting material, and that by adding Ga, it is possible to obtain a material that has even better characteristics. It turned out that this is possible. Next, these will be explained in detail using examples. Example 1 Table 1 shows the composition of the test materials used in the examples of the present invention. However, Sn was determined by reducing the weight of Sn used for electroplating, and Ga was the nominal value.
【表】
各試料は初めにCu−NbおよびCu−Nb−Ga合
金の150gをアーク溶解し、水冷ルツボ内で冷却
して15mm角×80mm長の鋳造材とした。
その後スエージングならびに線引きにより0.24
mmφの線材に延伸加工し、その後第1表のSn組
成となるようなSnをメツキした。その後メツキ
した各試料を石英管に真空封入し、400℃×24h
前処理後600℃×96h拡散処理し、9Teslaの外部
磁場を試料に垂直に印加し臨界電流値Jcの測定を
行なつた。
第1図はその結果をNb%とJc値によつてプロ
ツトしたものである。Ga添加のあるものは同一
組成の無添加の場合と比較してJc値が明らかに改
善されていることがわかる。なお第1図からもわ
かるようにNbが15%以下になるとGaの有無にか
かわらずJcは3×104以下になつてしまい合金系
超電導材でも容易に達成できる値しか得られず化
合物系としての存在理由がなくなるため除外され
るのである。
また第2図はNo.9の試料について400℃×24h
前処理のあるものとないものについて450,500,
550,600,650,700,750℃の各温度において拡
散処理したのちに9TeslaでJcを測定し、プロツ
トした結果である。前処理をすることにより明ら
かにJc値がよくなつている様子がわかる。なお第
2図によつて拡散処理の温度も前記したように
500〜700℃の間が適当であることがわかる。この
ような前処理は240℃以下ではSnの溶融点との関
連もあつて効果がなく500℃以上になると高すぎ
てSnメツキ層がだれてきて不均質化がおこりか
えつて悪影響がみられる。
また時間については20h以下では短かすぎ、
100h以上と長時間行なつても効果が飽和してし
まい意見がなくなる。このような前処理は必要に
応じ取り入ることができるものであり、おそらく
Snメツキ層のなじみと安定化に寄与し、つぎに
拡散のために有効に作用するものと考えられる。
実施例 2
第2表に示すようにNb公称値25%の試料にGa
を種々な量で添加した試料をつくり、これを0.24
mmφに延伸後、7%SnとなるようSnメツキし、
これを400℃×24h前処理し、600℃×150h拡散処
理してから9TeslaでJc値を測定した。
第3図はその結果をプロツトしたものである。
第3図からGa0.2%以上になるとGa添加の効果が
あり、4%でほぼ飽和してくることがわかる。[Table] For each sample, 150 g of Cu-Nb and Cu-Nb-Ga alloys were first arc melted and cooled in a water-cooled crucible to form a cast material of 15 mm square x 80 mm length. Then 0.24 by swaging and drawing
A wire rod of mmφ was drawn and then plated with Sn to have the Sn composition shown in Table 1. After that, each plated sample was vacuum sealed in a quartz tube and heated to 400°C for 24 hours.
After pretreatment, the sample was subjected to diffusion treatment at 600°C for 96 hours, and an external magnetic field of 9 Tesla was applied perpendicularly to the sample to measure the critical current value Jc. Figure 1 shows the results plotted in terms of Nb% and Jc value. It can be seen that the Jc value of the sample with Ga addition is clearly improved compared to the case of the same composition without the addition. As can be seen from Figure 1, when Nb is less than 15%, Jc becomes less than 3 × 10 4 regardless of the presence or absence of Ga, which is a value that can be easily achieved even with alloy-based superconducting materials, and it cannot be used as a compound-based material. It is excluded because there is no reason for its existence. Figure 2 shows sample No. 9 at 400°C x 24h.
450, 500 for those with and without pretreatment,
These are the results of measuring and plotting Jc on a 9 Tesla after diffusion treatment at temperatures of 550, 600, 650, 700, and 750°C. It can be seen that the Jc value clearly improves by preprocessing. In addition, as shown in Figure 2, the temperature of the diffusion treatment is also as described above.
It can be seen that a temperature between 500 and 700°C is suitable. Such pretreatment is ineffective at temperatures below 240°C, partly due to the relationship with the melting point of Sn, and at temperatures above 500°C, the temperature is too high, causing the Sn plating layer to sag and becoming heterogeneous, causing negative effects. Also, regarding the time, less than 20 hours is too short.
Even if you do it for a long time (more than 100 hours), the effect will be saturated and there will be no opinion. Such preprocessing can be incorporated as needed, and perhaps
It is thought that it contributes to the adaptation and stabilization of the Sn plating layer, and then acts effectively for diffusion. Example 2 As shown in Table 2, Ga was applied to a sample with a nominal Nb value of 25%.
We prepared samples with various amounts of
After stretching to mmφ, Sn plating is applied to 7% Sn.
This was pretreated at 400°C for 24 hours, and then diffused at 600°C for 150 hours, and then the Jc value was measured using 9Tesla. Figure 3 plots the results.
From FIG. 3, it can be seen that the effect of Ga addition is apparent when the concentration of Ga exceeds 0.2%, and it becomes almost saturated at 4%.
【表】【table】
【表】
このような傾向は他のNb組成の場合でもほぼ
同様であり、0.2%Gaが下限と考えられる。上限
についてはNo.29では0.24φまで加工が出来なかつ
たことを考慮すると加工可能な範囲すなわち8.0
%Gaまでが上限と考えられる。
以上本発明は溶解鋳造、加工、メツキ、拡散と
いつた通常広く常用されている方法をつくられた
のみで高いJc値を有するNb3Sn系超電導材を簡易
経済的に入手可能になし得たとともにGa添加に
よりそのJc値を格段に向上せしめ得たものであ
り、今後の高磁界での応用に際しその可能性を一
段と進展せしめ得た意義はけだし大きい。[Table] This trend is almost the same for other Nb compositions, and 0.2% Ga is considered to be the lower limit. Regarding the upper limit, considering that No. 29 could not be processed up to 0.24φ, the range that can be processed is 8.0
%Ga is considered to be the upper limit. As described above, the present invention has made it possible to easily and economically obtain a Nb 3 Sn-based superconducting material having a high Jc value by simply creating a widely used method such as melting and casting, processing, plating, and diffusion. At the same time, the Jc value was significantly improved by adding Ga, and the significance of further advancing its potential for future applications in high magnetic fields is enormous.
第1図は各組成のNbにGa添加した場合の効果
を対比した線図、第2図は前処理ならびに拡散温
度でJc値に与える効果について比較した線図、第
3図はGa添加の量とJcの変化の関係をブロツト
した線図である。
Figure 1 is a diagram comparing the effect of adding Ga to Nb of each composition, Figure 2 is a diagram comparing the effects of pretreatment and diffusion temperature on Jc value, and Figure 3 is a diagram comparing the amount of Ga added. It is a diagram plotting the relationship between changes in and Jc.
Claims (1)
らびに不可避なる不純物よりなる合金を溶解鋳造
し、当該鋳造材を延伸加工して当該延伸マトリツ
クス中にフイラメント状Nb相を形成せしめ、然
るのち当該延伸材に前記Nbの存在量に対応して
Nb3Snを生成せしめ得る量のSnをメツキし、その
後拡散処理して前記NbフイラメントをNb3Sn相
よりなるフイラメントに転換せしめるNb3Sn系超
電導材の製造方法。 2 Nb15〜70重量%Ga0.2〜8重量%残部Cuな
らびに不可避なる不純物よりなる合金を溶解鋳造
し、当該鋳造材を延伸加工して当該延伸マトリツ
クス中にフイラメント状Nb相を形成せしめ、然
るのち当該延伸材に前記Nbの存在量に対応して
Nb3Snを生成せしめ得る量のSnをメツキし、中途
において240〜500℃で20〜100h予備的熱処理を
行ないその後拡散処理して前記Nbフイラメント
をNb3Sn相よりなるフイラメントに転換せしめる
Nb3Sn系超電導材の製造方法。[Claims] 1. An alloy consisting of 15 to 70% by weight Nb, 0.2 to 8% by weight Ga, balance Cu, and unavoidable impurities is melted and cast, and the cast material is stretched to form a filamentous Nb phase in the stretched matrix. is formed in the drawn material, and then the drawn material is coated with Nb corresponding to the amount of Nb present.
A method for producing an Nb 3 Sn-based superconducting material, which comprises plating Sn in an amount that can generate Nb 3 Sn, and then performing a diffusion treatment to convert the Nb filament into a filament consisting of an Nb 3 Sn phase. 2. Melt and cast an alloy consisting of 15 to 70% by weight Nb, 0.2 to 8% by weight Ga, balance Cu, and unavoidable impurities, and stretch the cast material to form a filamentary Nb phase in the drawn matrix. Later, the drawn material was treated with the same amount of Nb as described above.
Sn is plated in an amount sufficient to generate Nb 3 Sn, and a preliminary heat treatment is performed at 240 to 500°C for 20 to 100 hours in the middle, followed by a diffusion treatment to convert the Nb filament into a filament consisting of an Nb 3 Sn phase.
A method for producing Nb 3 Sn-based superconducting material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5210580A JPS56150179A (en) | 1980-04-18 | 1980-04-18 | Preparation of nb3sn type superconductive material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5210580A JPS56150179A (en) | 1980-04-18 | 1980-04-18 | Preparation of nb3sn type superconductive material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56150179A JPS56150179A (en) | 1981-11-20 |
| JPS6152226B2 true JPS6152226B2 (en) | 1986-11-12 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5210580A Granted JPS56150179A (en) | 1980-04-18 | 1980-04-18 | Preparation of nb3sn type superconductive material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56150179A (en) |
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| CN117512393B (en) * | 2023-11-16 | 2026-04-03 | 西安理工大学 | Ultra-high ductility CuSnGa alloy and its preparation method |
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1980
- 1980-04-18 JP JP5210580A patent/JPS56150179A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56150179A (en) | 1981-11-20 |
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