JPS6152941B2 - - Google Patents
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- Publication number
- JPS6152941B2 JPS6152941B2 JP10610680A JP10610680A JPS6152941B2 JP S6152941 B2 JPS6152941 B2 JP S6152941B2 JP 10610680 A JP10610680 A JP 10610680A JP 10610680 A JP10610680 A JP 10610680A JP S6152941 B2 JPS6152941 B2 JP S6152941B2
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- Prior art keywords
- temperature
- humidity
- voltage
- resistance
- humidity detection
- Prior art date
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- 238000001514 detection method Methods 0.000 claims description 27
- 238000005259 measurement Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 102100029469 WD repeat and HMG-box DNA-binding protein 1 Human genes 0.000 description 1
- 101710097421 WD repeat and HMG-box DNA-binding protein 1 Proteins 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/045—Circuits
- G01N27/046—Circuits provided with temperature compensation
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Description
【発明の詳細な説明】
本発明は、温・湿度検出装置にかかり、精度と
信頼性の高い温・湿度検出装置を提供しようとす
るものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a temperature/humidity detection device, and an object thereof is to provide a temperature/humidity detection device with high accuracy and reliability.
温・湿度検出装置は、従来より種々様々なもの
があるが、それらは温度および湿度の検出を、そ
れぞれ専用の検出素子で行なつている。そのため
周辺回路が複雑になつたり、装置が大きくなる、
また実装が面倒などの欠点を有している。本発明
では、温度によつて電気容量値が変化し、湿度に
よつて電気抵抗値が変化する温・湿度検知素子を
用いることによつて上記の欠点を解消した温・湿
度検出装置を提供するものである。 There have been various types of temperature/humidity detection devices, and each of them detects temperature and humidity using dedicated detection elements. As a result, the peripheral circuitry becomes complicated and the device becomes larger.
It also has drawbacks such as being troublesome to implement. The present invention provides a temperature/humidity detection device that eliminates the above drawbacks by using a temperature/humidity detection element whose capacitance value changes depending on temperature and whose electrical resistance value changes depending on humidity. It is something.
近年、水分の吸着や付着による抵抗変化を利用
した高感度のセラミツク湿度検知素子が、開発さ
れている。本発明で使用する温・湿度検知素子は
上記の機能に温度による誘電率の変化に従つて電
気容量値が変化する温度検出機能を付加したもの
である。従つて、上記検出素子を、常時直流電圧
を印加した状態で使用することは好ましくない。
これは素子表面に吸着されあるいは付着した水が
分極したり、素子自体が電気分解されて、特性の
劣化や素子自体の劣化を生じることがあるからで
ある。 In recent years, highly sensitive ceramic humidity sensing elements have been developed that utilize changes in resistance due to adsorption or adhesion of moisture. The temperature/humidity detecting element used in the present invention has a temperature detecting function in which the capacitance value changes in accordance with the change in dielectric constant due to temperature, in addition to the above functions. Therefore, it is not preferable to use the detection element in a state where a direct current voltage is constantly applied.
This is because water adsorbed or attached to the element surface may be polarized, or the element itself may be electrolyzed, resulting in deterioration of characteristics or deterioration of the element itself.
従来このような素子は、交流電圧で駆動して用
いることが多く、このため整流素子や増幅回路な
どが必要になる、外来雑音や電源変動に弱く、検
出精度が悪いなどの欠点があつた。本発明にかか
る温・湿度検出装置は、温・湿度検知素子をパル
ス電圧で駆動することにより、上記問題点を解決
した温・湿度検出装置を提供するものである。 Conventionally, such elements have often been used while being driven by alternating current voltage, and have had drawbacks such as requiring rectifying elements and amplifier circuits, being susceptible to external noise and power fluctuations, and having poor detection accuracy. The temperature/humidity detecting device according to the present invention provides a temperature/humidity detecting device that solves the above problems by driving the temperature/humidity detecting element with a pulse voltage.
以下、その実施例について図面を用いて詳細に
説明する。 Examples thereof will be described in detail below with reference to the drawings.
第１図は本実施例において用いる温・湿度検知
素子の周囲温度をパラメータにとつた時の湿度特
性を示し、第２図は周囲湿度をパラメータにとつ
た時の温度特性を示す。第１図と第２図より、
温・湿度検知素子の抵抗値Ｒと容量値Ｃは次式で
示される。 FIG. 1 shows the humidity characteristics of the temperature/humidity detecting element used in this embodiment when the ambient temperature is taken as a parameter, and FIG. 2 shows the temperature characteristics when the ambient humidity is taken as a parameter. From Figures 1 and 2,
The resistance value R and the capacitance value C of the temperature/humidity sensing element are expressed by the following equations.
Ｒ＝R0exp｛Ｂ（１／Ｔ−１／Ｔ０）｝exp（−AH）
……(1)
Ｃ＝−αＴ＋βＨ＋γ ……(2)
ここで、Ｔ：周囲温度〔〓〕，T0：基準温度
〔〓〕，
Ｈ：相対温度〔％〕，Ｂ：温度係数，
Ａ：湿度係数，R0：Ｔ＝T0，Ｈ＝０
％の時の抵抗，
α，β，γ：それぞれ定数
である。 R=R 0 exp {B (1/T-1/T 0 )} exp (-AH) ...(1) C=-αT+βH+γ ...(2) Here, T: ambient temperature [〓], T 0 : Reference temperature [〓], H: Relative temperature [%], B: Temperature coefficient, A: Humidity coefficient, R 0 : T=T 0 , H=0
% resistance, α, β, γ: Each is a constant.
第３図は本実施例である温・湿度検出装置の機
能ブロツク図である。これは、湿度を固定抵抗素
子と検知素子の抵抗値によつて決まる分圧電圧よ
り求め、温度を固定抵抗素子と検知素子の容量で
決まる時定数より求め、求めた温・湿度によつて
被制御系を制御する機能をもつものである。 FIG. 3 is a functional block diagram of the temperature/humidity detection device according to this embodiment. This is done by finding the humidity from the divided voltage determined by the resistance values of the fixed resistance element and the sensing element, and finding the temperature from the time constant determined by the capacitance of the fixed resistance element and the sensing element. It has the function of controlling the control system.
図において、温・湿度検知素子Ｓは固定抵抗素
子R3とR4にそれぞれ直列接続されており、温度
計測時には抵抗素子R3の一端をアースレベルに
し、湿度計測時には抵抗素子R4の一端をアース
レベルにすることによつて間欠的に電圧を印加す
る。図のの点の分圧電圧は、抵抗素子R3，R4
をアースレベルにした時にはそれぞれ、
で表わせる。ただし
ＶCC：電源電圧，ｔ：電圧印加時よりの時間，
t0，t′0：温・湿度検出素子Ｓと抵抗素子R3，また
は温・湿度検出素子Ｓと抵抗素子R4の直列回路
の時定数で、それぞれ
t0＝Ｃ・Ｒ・Ｒ３／Ｒ＋Ｒ３，t′0＝Ｃ・Ｒ・Ｒ４／
Ｒ＋Ｒ４……(5)
で表わせる。 In the figure, the temperature/humidity sensing element S is connected in series with fixed resistance elements R 3 and R 4 , respectively. When measuring temperature, one end of resistance element R 3 is set to the ground level, and when measuring humidity, one end of resistance element R 4 is connected to the ground level. Voltage is applied intermittently by setting it to earth level. The divided voltage at the point in the figure is the resistance element R 3 , R 4
When set to earth level, respectively, It can be expressed as However, V CC : power supply voltage, t: time from voltage application,
t 0 , t′ 0 : Time constant of the series circuit of temperature/humidity detection element S and resistance element R 3 or temperature/humidity detection element S and resistance element R 4 , respectively, t 0 =C・R・R 3 / R+R 3 ,t′ 0 =C・R・R 4 /
It can be expressed as R+R 4 ...(5).
本実施例における装置では、まず湿度計測のた
めの、検知素子の抵抗計測より開始する。ゲート
制御回路１１のＧ１をアースレベルにすると、検
知素子Ｓと抵抗素子R4に電圧が印加される。電
圧の印加時間は(4)式より、(5)式のt′0より充分に
長くなければならない。この時、分圧電圧ＥR
ＥR＝Ｒ４・ＶＣＣ／Ｒ＋Ｒ４ ……(6)
となり、検知素子の抵抗値Ｒは
Ｒ＝R4・ＶＣＣ−ＥＲ／ＥＲ ……(7)
で求まる。第４図は分圧電圧計測のタイミングチ
ヤートを示している。なお図において、各波形の
横手に記載した記号は第３図の各端子に付した記
号と共通する。パルス電圧印加後、分圧電圧が(4)
式に従つて安定した後、ゲート制御回路１１のＧ
５からパルス電圧が出され、Ａ／Ｄコンバータ制
御回路１２によつて設定されたデイジタル値によ
つて出力される、Ａ／Ｄコンバータ１４のアナロ
グ出力V0と分圧電圧とを、電圧比較器CP１によ
つて比較する。アンド回路AND１はゲート制御
回路１１のＧ５が“Ｌ”の時には比較結果を無効
にするためのものである。この操作により、分圧
電圧がデイジタル化され、(7)式に従つて検知素子
の抵抗が、演算回路１３によつて算出される。 The apparatus in this embodiment first starts with measuring the resistance of the sensing element for humidity measurement. When G1 of the gate control circuit 11 is set to the ground level, a voltage is applied to the sensing element S and the resistive element R4 . According to equation (4), the voltage application time must be sufficiently longer than t′ 0 in equation (5). At this time, the divided voltage E R E R = R 4 · V CC /R + R 4 ...(6), and the resistance value R of the sensing element is R = R 4 · V CC - E R /E R ... (7 ). FIG. 4 shows a timing chart for measuring divided voltage. In the figure, the symbols written next to each waveform are the same as the symbols attached to each terminal in FIG. After applying the pulse voltage, the divided voltage is (4)
After stabilizing according to the formula, G of the gate control circuit 11
5 outputs a pulse voltage, and compares the analog output V 0 of the A/D converter 14 and the divided voltage, which are output according to the digital value set by the A/D converter control circuit 12, with a voltage comparator. Compare by CP1. The AND circuit AND1 is for invalidating the comparison result when G5 of the gate control circuit 11 is "L". By this operation, the divided voltage is digitized, and the resistance of the sensing element is calculated by the arithmetic circuit 13 according to equation (7).
次に温度検出のための容量計測を行なう。検知
素子Ｓと固定抵抗R3の直列回路に、ゲート制御
回路１１のＧ２端子からパルス電圧を印加する。
パルス電圧印加後より、分圧電圧がある電圧値
V1になるまでの時間をｔAとすれば、(3)式より
V1＝Ｒ３ＶＣＣ／Ｒ３＋Ｒ（１＋Ｒ／Ｒ３ε−ｔＡ
／ｔ０）……(8)
となり、検知素子Ｓの容量Ｃは
となる。また(3)式よりｔ≫t0が成り立つ時間ｔで
は分圧電圧は
ＥC≒Ｒ３ＶＣＣ／Ｒ＋Ｒ３ ……(10)
となるので、上記比較電圧V1は
Ｒ３ＶＣＣ／Ｒ＋Ｒ３＜V1＜ＶCC
の範囲になければならない。今、比較電圧を
V1＝Ｒ＋Ｒ３Ｋ／Ｋ（Ｒ＋Ｒ３） ……(11)
Ｋ：定数
とすれば(9)式は
Ｃ＝ｔＡ／１ｎ（Ｋ）・Ｒ＋Ｒ３／ＲＲ３……(12)
と簡単になる。 Next, capacitance measurement is performed to detect temperature. A pulse voltage is applied from the G2 terminal of the gate control circuit 11 to the series circuit of the sensing element S and the fixed resistor R3 .
Voltage value with partial voltage after applying pulse voltage
If the time taken to reach V 1 is t A , then from equation (3) V 1 = R 3 V CC /R 3 +R (1 + R / R 3 ε-t A
/t 0 )...(8), and the capacitance C of the sensing element S is becomes. Also, from equation (3), at time t when t≫t 0 holds true, the divided voltage becomes E C ≒ R 3 V CC /R + R 3 ... (10), so the above comparison voltage V 1 is R 3 V CC /R + R 3 Must be in the range <V 1 <V CC . Now, if the comparison voltage is V 1 = R + R 3 K / K (R + R 3 ) ... (11) K: constant, the formula (9) is C = t A /1n (K) · R + R 3 / RR 3 ... (12) becomes simple.
第３図の実施例においては、前記の既に求めた
分圧電圧ＥRより、(10)式のＥCを下式を使つて
ＥC＝Ｒ４（ＶＣＣ−ＥＲ／Ｒ４ＶＣＣ＋（Ｒ３−Ｒ
４）ＥＲ・ＶCC……(13)
演算回路１３により求める。（13）式の電圧値
をＡ／Ｄコンバータ１４により出力し、それを固
定抵抗素子R1とR2により１／Ｋに分割すること
により、(11)式の比較電圧を作つている。なお第３
図における１８は被制御系である。 In the example shown in FIG. 3, from the already determined divided voltage E R , E C in equation (10) is calculated using the following equation: E C = R 4 (V CC - E R /R 4 V CC +(R 3 −R
4 ) E R・V CC ...(13) Obtained by the arithmetic circuit 13. The comparison voltage of equation (11) is created by outputting the voltage value of equation (13) by the A/D converter 14 and dividing it into 1/K by fixed resistance elements R 1 and R 2 . Furthermore, the third
18 in the figure is a controlled system.
第５図は検出素子の容量値計測のタイミングチ
ヤートである。なお図において各波形の横手に記
載した記号は、第４図同様第３図の各端子に付し
た記号と共通する。ゲート制御回路１１の端子Ｇ
２により検出回路に間欠的に電圧を印加すると、
の分圧電圧は(3)式で示される応答を示す。電圧
比較器CP２で、の分圧電圧との設定電圧を
比較して、の分圧電圧がの設定電圧より大き
い時に出力端子が“Ｈ”になる。端子との
NANDをナンド回路NAND１により行なつて、端
子が“Ｌ”の時のみ、クロツク源１５の出力
からの入力を、計数回路１６によつて計数するこ
とによつて、ｔAを計測する。この結果と、前述
の検知素子Ｓの抵抗計測結果とから、(12)式を用い
て検知素子の容量を演算回路１３により算出す
る。 FIG. 5 is a timing chart for measuring the capacitance value of the detection element. Note that the symbols written next to each waveform in the figure are the same as the symbols attached to each terminal in FIG. 3 as in FIG. 4. Terminal G of gate control circuit 11
2, when voltage is applied intermittently to the detection circuit,
The divided voltage of shows the response shown by equation (3). The voltage comparator CP2 compares the set voltage with the divided voltage of , and when the divided voltage of is larger than the set voltage of , the output terminal becomes "H". with terminal
NAND is performed by the NAND circuit NAND1, and t A is measured by counting the input from the output of the clock source 15 by the counting circuit 16 only when the terminal is "L". From this result and the resistance measurement result of the sensing element S described above, the capacitance of the sensing element is calculated by the calculation circuit 13 using equation (12).
検知素子の抵抗値と容量値が求められれば、
(1)，(2)式より、相対湿度Ｈと温度Ｔは
Ｔ＝βＨ＋γ−Ｃ／α ……(15)
より求まる。ただし
ａ＝Ａβ
ｂ＝β1n（Ｒ／Ｒ０）＋Ｂ／Ｔ０β＋Ａ（γ−Ｃ）
ｃ＝（γ−Ｃ）｛1n（Ｒ／Ｒ０）＋Ｂ／Ｔ０｝−αＢ
である。従つて（14），（15）式の計算を演算回路
１３で実行すれば、湿度Ｈと温度Ｔが正確に求ま
る。 Once the resistance and capacitance values of the sensing element are determined,
From equations (1) and (2), the relative humidity H and temperature T are T=βH+γ-C/α...(15). However, a=Aβ b=β1n (R/R 0 )+B/T 0 β+A(γ−C) c=(γ−C) {1n(R/R 0 )+B/T 0 }−αB. Therefore, if the calculations of equations (14) and (15) are executed by the arithmetic circuit 13, the humidity H and temperature T can be accurately determined.
また上記のような検出素子は、その性質上空気
中に露出して使用しなければならない。そこで検
出素子は空気中の水分だけでなく、他の様々な物
質が検出素子表面に付着して、湿度に対する感度
が低下する。そこで本発明の実施例では、第３図
に示すように、ヒータ制御回路１７によつて一定
時間おきに、検出素子Ｓの近傍に配置されたヒー
タＨに通電することによつて、検知素子Ｓを約
450℃に加熱することによつて、素子表面に付着
した物質を取り去つている。この加熱クリーニン
グの終了は検知素子のサーミスタ特性を利用し
て、約450℃における素子抵抗値の検出をもつて
行なつている。この加熱クリーニングによつて、
湿度計測を精度と信頼性の高いものとすることが
できる。また検知素子の経時変化もほとんど無視
することができる。 Moreover, the above-mentioned detection element must be used while being exposed to the air due to its nature. Therefore, not only moisture in the air but also various other substances adhere to the surface of the detection element, reducing its sensitivity to humidity. Therefore, in the embodiment of the present invention, as shown in FIG. Approximately
Substances attached to the element surface are removed by heating to 450°C. This heating cleaning is completed by detecting the element resistance value at about 450° C. by utilizing the thermistor characteristics of the sensing element. Through this heating cleaning,
Humidity measurement can be made highly accurate and reliable. Furthermore, changes in the sensing element over time can be almost ignored.
以上述べてきた様に本発明は以下のような効果
を有する。 As described above, the present invention has the following effects.
(1) 温度補償あるいは湿度補償用の素子を必要と
せず、単一の検知素子のみで温度と湿度を高精
度で計測することができる。(1) Temperature and humidity can be measured with high precision using only a single sensing element, without the need for temperature or humidity compensation elements.
(2) 回路構成が簡単になり、しかも検知素子が一
つなので実装が容易になる。(2) The circuit configuration is simplified, and since there is only one sensing element, it is easy to implement.
(3) 信号のほとんどをデイジタル化しうるので電
源変動や外来雑音に強いものとすることができ
る。(3) Since most of the signals can be digitized, it can be made resistant to power fluctuations and external noise.
(4) 設定電圧値を可変とすることにより、回路が
簡単化でき、しかも温度計測精度を高くでき
る。(4) By making the set voltage value variable, the circuit can be simplified and temperature measurement accuracy can be increased.
第１図は本発明の一実施例である温・湿度検出
装置に用いられる温・湿度検知素子の湿度特性を
示す図、第２図は上記温・湿度検知素子の温度特
性を示す図、第３図は上記温・湿度検出装置の機
能ブロツク図、第４図は上記温・湿度検出装置に
おける湿度計測（すなわち上記温・湿度検知素子
の抵抗計計測）のタイミングチヤート、第５図は
同温度計測（すなわち上記温・湿度検知素子の容
量計測）のタイミングチヤートである。
１１……ゲート制御回路、１２……Ａ／Ｄコン
バータ制御回路、１３……演算回路、１４……
Ａ／Ｄコンバータ、１５……クロツク源、１６…
…計数回路、１７……ヒータ制御回路、Ｓ……
温・湿度検知素子、Ｈ……ヒータ、R1，R2，
R3，R4……抵抗素子。
FIG. 1 is a diagram showing the humidity characteristics of a temperature/humidity sensing element used in a temperature/humidity sensing device that is an embodiment of the present invention, FIG. 2 is a diagram showing the temperature characteristics of the temperature/humidity sensing element described above, and FIG. Fig. 3 is a functional block diagram of the temperature/humidity detection device, Fig. 4 is a timing chart of humidity measurement in the temperature/humidity detection device (i.e., resistance meter measurement of the temperature/humidity detection element), and Fig. 5 is a diagram of the same temperature. This is a timing chart of measurement (that is, capacitance measurement of the temperature/humidity sensing element). 11... Gate control circuit, 12... A/D converter control circuit, 13... Arithmetic circuit, 14...
A/D converter, 15...Clock source, 16...
...Counting circuit, 17...Heater control circuit, S...
Temperature/humidity sensing element, H...Heater, R 1 , R 2 ,
R 3 , R 4 ...resistance elements.
Claims (1)
温度に応じて電気容量値が変化する温度・湿度検
出素子を用い、前記温・湿度検知素子と固定抵抗
素子とで構成された温度検出回路および湿度検出
回路、あるいは温・湿度検出回路に間欠的に電圧
を印加して、上記検出素子と固定抵抗素子の接続
点の電圧が設定電圧値に達するまでの時間計測に
よつて上記素子の電気容量値の検出を行ない、上
記検知素子と固定抵抗素子の接続点の電圧計測に
よつて上記素子の電気抵抗値の検出を行ない、前
記両検出値の演算により温度及び湿度を検出する
よう構成されたことを特徴とする温・湿度検出装
置。 ２ 印加する電圧値を可変とすることを特徴とす
る特許請求の範囲第１項記載の温・湿度検出装
置。[Claims] 1. A temperature/humidity detection element whose electrical resistance value changes depending on humidity and whose capacitance value changes depending on temperature, and is composed of the temperature/humidity detection element and a fixed resistance element. By applying voltage intermittently to the temperature detection circuit and humidity detection circuit, or the temperature/humidity detection circuit, and measuring the time until the voltage at the connection point between the detection element and the fixed resistance element reaches the set voltage value. The capacitance value of the above element is detected, the electrical resistance value of the above element is detected by measuring the voltage at the connection point between the above detection element and the fixed resistance element, and the temperature and humidity are detected by calculating both of the detected values. A temperature/humidity detection device characterized by being configured to. 2. The temperature/humidity detection device according to claim 1, characterized in that the applied voltage value is variable.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10610680A JPS5730932A (en) | 1980-07-31 | 1980-07-31 | Temperature, humidity detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10610680A JPS5730932A (en) | 1980-07-31 | 1980-07-31 | Temperature, humidity detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5730932A JPS5730932A (en) | 1982-02-19 |
| JPS6152941B2 true JPS6152941B2 (en) | 1986-11-15 |
Family
ID=14425232
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10610680A Granted JPS5730932A (en) | 1980-07-31 | 1980-07-31 | Temperature, humidity detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5730932A (en) |
-
1980
- 1980-07-31 JP JP10610680A patent/JPS5730932A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5730932A (en) | 1982-02-19 |
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