JPS6155239B2 - - Google Patents
Info
- Publication number
- JPS6155239B2 JPS6155239B2 JP54116691A JP11669179A JPS6155239B2 JP S6155239 B2 JPS6155239 B2 JP S6155239B2 JP 54116691 A JP54116691 A JP 54116691A JP 11669179 A JP11669179 A JP 11669179A JP S6155239 B2 JPS6155239 B2 JP S6155239B2
- Authority
- JP
- Japan
- Prior art keywords
- phosphor
- layer
- sintered
- high dielectric
- dielectric constant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 74
- 239000000843 powder Substances 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 19
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 13
- 229910002113 barium titanate Inorganic materials 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- 239000010936 titanium Substances 0.000 claims description 10
- 238000010304 firing Methods 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- 229910052788 barium Inorganic materials 0.000 claims description 6
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 6
- 238000011049 filling Methods 0.000 claims description 6
- 239000003381 stabilizer Substances 0.000 claims description 6
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 6
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052791 calcium Inorganic materials 0.000 claims description 5
- 239000011575 calcium Substances 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910052712 strontium Inorganic materials 0.000 claims description 5
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 239000011701 zinc Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- 239000011133 lead Substances 0.000 claims description 3
- 150000004703 alkoxides Chemical class 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical class [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 15
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 15
- 239000011521 glass Substances 0.000 description 13
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 12
- -1 silicon Chemical compound 0.000 description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 9
- 230000006866 deterioration Effects 0.000 description 7
- 238000001035 drying Methods 0.000 description 7
- 150000004696 coordination complex Chemical class 0.000 description 5
- 235000019441 ethanol Nutrition 0.000 description 4
- 125000002524 organometallic group Chemical group 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 3
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 3
- 229940088601 alpha-terpineol Drugs 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 238000005470 impregnation Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- 239000000020 Nitrocellulose Substances 0.000 description 2
- 229910007472 ZnO—B2O3—SiO2 Inorganic materials 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 229910052809 inorganic oxide Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229920001220 nitrocellulos Polymers 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Landscapes
- Luminescent Compositions (AREA)
Description
【発明の詳細な説明】
本発明は、輝度および寿命が改善された焼結型
電場発光素子に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a sintered electroluminescent device with improved brightness and lifetime.
現在、表示用素子としては液晶、発光ダイオー
ド、および蛍光表示管等がそれぞれの特長を生か
した面で使用されているが、電場発光素子(以
下、EL素子と称す)は極一部の自動車用メータ
パネル等に利用されているのみで表示用としては
殆んど実用されていない。その理由は、輝度およ
び寿命の面で実用レベルに達していないからであ
る。しかし、EL素子は本質的に面光源であり、
各色発光可能、消費電力が小、比較的大面積のも
のが低コストで出来る、デザイン上の自由度が大
であるなど、現在実用されている他の表示手段で
は得難い特長があり、家電品をはじめ自動車用機
器や計測機器等の表示手段としての期待は依然と
して根強いものがある。 Currently, liquid crystals, light emitting diodes, fluorescent display tubes, etc. are used as display elements by taking advantage of their respective features, but electroluminescent elements (hereinafter referred to as EL elements) are used in only a small number of automobiles. It is only used for meter panels, etc., and is hardly ever put into practical use as a display. The reason is that the brightness and lifespan have not reached practical levels. However, EL elements are essentially surface light sources;
It has features that are difficult to obtain with other display methods currently in use, such as being able to emit light in each color, having low power consumption, being able to produce relatively large areas at low cost, and having a high degree of freedom in design. There are still strong expectations for its use as a display means for automobile equipment, measuring instruments, etc.
EL素子の実用化をはばむ最大の原因は寿命問
題にある。ELの劣化に関しては、既に多くの研
究が行われてきているが、その劣化メカニズムは
まだ十分に解明されておらず、とくにEL素子の
点灯初期にみられる比較的大きな初期劣化のメカ
ニズムはわからないことが多い。 The biggest reason for hindering the practical application of EL devices is the issue of lifespan. Although much research has already been carried out regarding EL deterioration, the deterioration mechanism has not yet been fully elucidated, and in particular, the mechanism of relatively large initial deterioration seen in the early stages of EL element lighting is not understood. There are many.
現在の実用的なEL用蛍光体はZnS系のみであ
るが、これは水分が存在する状態で発光させると
急速な輝度低下を生ずる欠点があり、EL素子と
して動作させるときはその素子に防湿封止を施す
必要があることは周知である。この防湿封止の際
の処理温度、処理時間および防湿方法を工夫して
発光層中の残留水分除去に努めると、その初期劣
化は完全には解消しないものの、初期劣化の程度
を少なくすることができる。このことから、初期
劣化の一因として吸着水のレベルの微量残留水分
による影響も考えられる。この吸着水レベルの極
微量水分除去には、通常数百度の加熱処理が必要
であり、樹脂型ELでは実現することはできな
い。一方、従来から蛍光体をガラスバインダで結
着するほうろう型EL素子が知られており、数百
度の高温雰囲気で作成するので、初期劣化は小で
比較的長寿命であるが、高誘電率レジン使用の樹
脂型ELに比較して輝度が低いのが欠点である。
この原因としては、ZnS系蛍光体のバインダとし
て使用可能なほうろう用フリツトの比誘電率が5
〜10位で小であること、および通常、作業温度と
して600〜700℃の高温を要するので、蛍光体自体
が変質して輝度低下を生ずるためと考えられる。
以上述べたように、表示用としての実用輝度を有
し、かつ高温で防湿封止が可能で寿命の長いEL
素子はまだ開発されていない。 Currently, the only practical EL phosphor is ZnS-based, but this has the drawback of rapidly decreasing brightness when emitted in the presence of moisture, and when operating as an EL device, the device must be sealed with a moisture-proof seal. It is well known that it is necessary to provide protection. If efforts are made to remove residual moisture in the light-emitting layer by devising the processing temperature, processing time, and moisture-proofing method during moisture-proof sealing, the degree of initial deterioration can be reduced, although the initial deterioration will not be completely eliminated. can. From this, it is thought that the influence of trace amounts of residual moisture at the level of adsorbed water may be a factor in the initial deterioration. Removal of extremely small amounts of water at the level of adsorbed water usually requires heat treatment at several hundred degrees, which cannot be achieved with resin-type EL. On the other hand, enamel-type EL elements have been known in which phosphors are bound together with a glass binder, and because they are manufactured in a high-temperature atmosphere of several hundred degrees, initial deterioration is small and the lifespan is relatively long. The drawback is that the brightness is lower than the resin type EL used.
The reason for this is that the dielectric constant of the enamel frit, which can be used as a binder for ZnS-based phosphors, is 5.
This is thought to be because the phosphor itself is deteriorated and the brightness is lowered because it is small at ~10° C. and requires a high working temperature of 600 to 700° C.
As mentioned above, EL that has practical brightness for display use, can be sealed moisture-proof at high temperatures, and has a long life.
The device has not yet been developed.
本発明の目的は、上記した従来の樹脂型EL素
子やほうろう型EL素子にみられる欠点を排除
し、輝度および寿命を改善した新規な焼結型EL
素子を提供するにある。 The purpose of the present invention is to eliminate the drawbacks of the conventional resin-type EL elements and enamel-type EL elements described above, and to develop a new sintered EL element with improved brightness and service life.
The purpose is to provide elements.
このような本発明の焼結型EL素子は、極通常
のネサガラス基板の使用が可能な450℃前後の加
熱処理でもつて比較的誘電率の高い無機系バイン
ダで蛍光体その他無機系添加物を焼結することに
よつて製造できるものである。 The sintered EL element of the present invention can be produced by sintering the phosphor and other inorganic additives with an inorganic binder that has a relatively high dielectric constant even through heat treatment at around 450°C, which allows the use of a very ordinary Nesa glass substrate. It can be manufactured by tying it together.
本発明の焼結型EL素子の特徴とするところ
は、光放射側の透明導電層と背面電極との間に蛍
光体と誘電体とを含んでなる発光層を備えたEL
素子において、該発光層は蛍光体層を有してな
り、該蛍光体層は蛍光体を含有する蛍光体に無害
な金属の有機錯体の配合物の約450℃における加
熱分解焼成による焼結体よりなるものにして、該
蛍光体層はさらに、金属の有機錯体を含浸せしめ
たものを加熱して焼成した焼結体をも含むものに
して、該蛍光体層内の水分は十分に除去されてな
るものである。ここに該蛍光体層における蛍光体
はZnS系蛍光体であるものにおいて、該金属の有
機錯体はチタニウム、バリウム、ストロンチウ
ム、カルシウム、亜鉛、鉛、錫、インジウム、タ
ンタル、珪素等、ZnS系蛍光体に無害な金属のア
ルコキシドにして、該蛍光体に無害な金属の有機
錯体の配合物は安定剤を添加したものであること
が好ましい。また、該蛍光体に無害な金属の有機
錯体の配合物には、さらに蛍光体に無害の、蛍光
体よりも平均粒径が十分に小であり、かつ透明ま
たは白色の充填用無機系微粉末が配合されてなる
ものが好ましく、この場合、該発光層は該蛍光体
層の背面電極側に反射性の高誘電率・絶縁層を有
する二層構造発光層にして該反射性の高誘電率・
絶縁層はチタン酸バリウム、酸化チタンのごとき
高誘電体を含む金属の有機錯体配合物を加熱して
焼成した焼結体にして、該高誘電率・絶縁層はさ
らに金属の有機錯体を含浸せしめたものを加熱し
て焼成した焼結体をも含み、該高誘電率・絶縁層
内の水分は十分に除去されてなるものが好まし
い。このような、本発明焼結型EL素子において
は、蛍光体は高誘電体焼結層内に蛍光体を損傷し
ない程度の温度で焼結されてなるものにおいて、
発光体層の水分は十分に除去されている故、輝度
は大きく、寿命は長い。 The sintered EL element of the present invention is characterized by having a light emitting layer containing a phosphor and a dielectric between the transparent conductive layer on the light emitting side and the back electrode.
In the device, the light-emitting layer has a phosphor layer, and the phosphor layer is a sintered body obtained by thermal decomposition firing at about 450° C. of a compound of a metal organic complex containing the phosphor and which is harmless to the phosphor. The phosphor layer further includes a sintered body impregnated with an organic complex of metal and fired by heating, so that moisture in the phosphor layer is sufficiently removed. That's what happens. In this case, the phosphor in the phosphor layer is a ZnS-based phosphor, and the organic complex of the metal is a ZnS-based phosphor such as titanium, barium, strontium, calcium, zinc, lead, tin, indium, tantalum, silicon, etc. Preferably, the compound is a metal alkoxide that is harmless to the phosphor, and a stabilizer is added to the compound of the organic complex of the metal that is harmless to the phosphor. In addition, the compound of the metal organic complex that is harmless to the phosphor includes a transparent or white filling inorganic fine powder that is harmless to the phosphor and has an average particle size sufficiently smaller than that of the phosphor. In this case, the light emitting layer is a two-layer structure light emitting layer having a reflective high dielectric constant/insulating layer on the back electrode side of the phosphor layer.・
The insulating layer is a sintered body made by heating and firing a metal organic complex compound containing a high dielectric constant such as barium titanate or titanium oxide, and the high dielectric constant insulating layer is further impregnated with a metal organic complex. It also includes a sintered body obtained by heating and firing a sintered body, and it is preferable that moisture in the high dielectric constant/insulating layer is sufficiently removed. In such a sintered EL element of the present invention, the phosphor is sintered in the high dielectric sintered layer at a temperature that does not damage the phosphor.
Since moisture in the luminescent layer is sufficiently removed, the luminance is high and the life is long.
以上の本発明焼結型EL素子の製造は下記のよ
うな工程を用いることができる。 The following steps can be used to manufacture the above-described sintered EL device of the present invention.
チタニウム、バリウム、ストロンチウム、カル
シウム、亜鉛、鉛、錫、インジウム、タンタル、
珪素等、ZnS系蛍光体に無害な金属元素の有機錯
体を配合した蛍光体ペーストまたは蛍光体スラリ
を用いて蛍光体層を透明導電層上に製膜し、加熱
乾燥させた後、さらに前記のチタン、バリウム等
の金属錯体の安定化液を該蛍光体層に追加含浸
し、その乾燥後引き続き約450℃前後の焼成によ
つて該蛍光体層中の有機成分を残らず焼散させる
と共に前記の金属錯体の熱分解で生ずる金属酸化
物でもつて蛍光体を焼結する処理を少くとも1
回、必要あれば数回繰り返して蛍光体層内の空隙
部をできるだけ充填し、同時に層内水分を十分に
除去する処理を施して蛍光体層よりなる発光層を
形成し、その後に蒸着等の手段により背面電極を
形成する。 Titanium, barium, strontium, calcium, zinc, lead, tin, indium, tantalum,
A phosphor layer is formed on the transparent conductive layer using a phosphor paste or phosphor slurry in which an organic complex of a harmless metal element is blended with a ZnS-based phosphor such as silicon, and then heated and dried. The phosphor layer is additionally impregnated with a stabilizing liquid of a metal complex such as titanium or barium, and after drying, the organic components in the phosphor layer are burned out without leaving any residue by firing at about 450°C. The phosphor is sintered with metal oxides produced by thermal decomposition of metal complexes.
A light-emitting layer made of the phosphor layer is formed by filling the voids in the phosphor layer as much as possible by repeating the process several times if necessary, and at the same time sufficiently removing the moisture in the layer. A back electrode is formed by the means.
なお、焼成による蛍光体層内の空隙発生を押え
る、より効果的な手段として、蛍光体層構成材料
として、蛍光体の他に蛍光体に無害で、かつ蛍光
体よりもその粒径が十分に小である、透明または
白色の無機系酸化物の微粉末を配合したものに、
前記と同様に、金属錯体の熱分解で生成する酸化
物でもつて焼結する形の発光層を形成することも
できる。 In addition, as a more effective means of suppressing the generation of voids in the phosphor layer due to firing, it is possible to use materials other than the phosphor that are harmless to the phosphor and whose particle size is larger than that of the phosphor. A mixture of small, transparent or white inorganic oxide fine powder,
Similarly to the above, a light emitting layer can also be formed by sintering an oxide produced by thermal decomposition of a metal complex.
また、前記の透明または白色の無機系酸化物の
微粉末を配合したもので形成した蛍光体層の上に
チタン酸バリウムや酸化チタンのような高誘電率
物質と前記の金属の有機錯体とを配合したペース
トを用いて高誘電率・絶縁層を形成したものを加
熱乾燥した後、さらに金属錯体の安定化液を含浸
し、次に約450℃前後の焼成によつて焼結して反
射性の高誘電率・絶縁層を形成して、二層構造の
発光層となし、その後背面電極を形成することも
できる。 In addition, a high dielectric constant material such as barium titanate or titanium oxide and an organic complex of the metal described above are formed on a phosphor layer formed by blending the fine powder of the transparent or white inorganic oxide. After forming a high dielectric constant/insulating layer using the blended paste and drying it by heating, it is further impregnated with a metal complex stabilizing liquid, and then sintered by firing at around 450℃ to make it reflective. It is also possible to form a high dielectric constant/insulating layer to form a two-layer light emitting layer, and then form a back electrode.
以下に、本発明を実施例につき、図面を参照し
て、製作工程を述べることによつて具体的に詳述
する。 Hereinafter, the present invention will be specifically explained in detail by referring to the drawings and describing the manufacturing process using examples.
実施例 1 第1図の部分断面図を参照して説明する。Example 1 This will be explained with reference to the partial cross-sectional view of FIG.
エチルセルローズ0.4重量部、チタンテトライ
ソプロポキシド(金属の有機錯体)0.5重量部、
アクリルエステルSA(商品名)(安定剤)0.5重
量部、チタン酸バリウム(無機系微粉末)5.5重
量部、蛍光体16.8重量部、これに適量のαテルピ
ネオール、エチルアルコール等を加えた蛍光体ペ
ーストを使用してガラス基板1上に透明導電層2
を形成したネサガラス板の透明導電層2上に印刷
製膜して乾燥後の膜厚35〜40μmの蛍光体層3を
形成する。次に、エチルセルローズ0.4重量部、
チタンテトライソプロポキシド(有機金属錯体)
0.5重量部、アクリルエステルSA(商品名)(安
定剤)0.5重量部、チタン酸バリウム(高誘電
体)33重量部、および適量のαテルピネオール、
エチルアルコールからなる高誘電体ペーストを用
いて、上記の蛍光体層3上に膜厚約15〜20μmの
高誘電率・絶縁層4を形成し、全体膜厚50〜55μ
mの二重構造の発光層6を形成する。次に、該発
光層6を加熱乾燥した後、チタンテトライソプロ
ポキシド1重量部、アクリルエステルSA(商品
名)1重量部、および、エタノール2重量部から
なる安定化チタン錯体液を前記の発光層6に塗布
含浸させる。次に、160℃、30分の加熱乾燥を行
つた後、450℃、40分の焼成によつて該発光層6
の中の有機成分を残らず焼散させると共に、前記
のチタン錯体の熱分解で生成する酸化チタン3
3,43のみで蛍光体層3における蛍光体31や
充填用無機系微粉末32としてのチタン酸バリウ
ム、および高誘電率・絶縁層4における高誘電体
である無機系微粒子42のチタン酸バリウム粉末
を、それぞれ結着した形の焼結型発光層にすると
共に、該発光層内の水分を十分に除去する。次い
で、高誘電率・絶縁層4上にAl真空蒸着法によ
り背面電極5を形成する。これによつて、蛍光体
層と高誘電率・絶縁層との二重構造よりなる発光
層において、蛍光体層は蛍光体と充填用無機系微
粉末とが焼結酸化チタンによつて結着され、高誘
電率・絶縁層は高誘電体であるチタン酸バリウム
が焼結酸化チタンによつて結着され、それらの層
内の空隙部は含浸焼成による焼結酸化チタンによ
り充填されて、層内の水分は十分に除去されてな
るものが形成されることになる。 0.4 parts by weight of ethyl cellulose, 0.5 parts by weight of titanium tetraisopropoxide (organic metal complex),
Phosphor paste made by adding 0.5 parts by weight of acrylic ester SA (trade name) (stabilizer), 5.5 parts by weight of barium titanate (inorganic fine powder), 16.8 parts by weight of phosphor, and an appropriate amount of α-terpineol, ethyl alcohol, etc. transparent conductive layer 2 on glass substrate 1 using
A phosphor layer 3 having a thickness of 35 to 40 μm after drying is formed by printing on the transparent conductive layer 2 of the Nesa glass plate on which the phosphor layer 3 is formed. Next, 0.4 parts by weight of ethyl cellulose,
Titanium tetraisopropoxide (organometallic complex)
0.5 parts by weight, 0.5 parts by weight of acrylic ester SA (trade name) (stabilizer), 33 parts by weight of barium titanate (high dielectric), and an appropriate amount of α-terpineol,
Using a high dielectric paste made of ethyl alcohol, a high dielectric constant insulating layer 4 with a thickness of about 15 to 20 μm is formed on the phosphor layer 3, and the total film thickness is 50 to 55 μm.
A light emitting layer 6 having a double structure of m is formed. Next, after heating and drying the light-emitting layer 6, a stabilized titanium complex liquid consisting of 1 part by weight of titanium tetraisopropoxide, 1 part by weight of acrylic ester SA (trade name), and 2 parts by weight of ethanol was added to the luminescent layer 6. Layer 6 is coated and impregnated. Next, the light-emitting layer 6 is heated and dried at 160°C for 30 minutes, and then baked at 450°C for 40 minutes.
While burning out all the organic components in the titanium complex, the titanium oxide 3 produced by thermal decomposition of the titanium complex is
3 and 43 only contain barium titanate as the phosphor 31 in the phosphor layer 3 and the inorganic fine powder 32 for filling, and the barium titanate powder as the inorganic fine particles 42 which are high dielectrics in the high dielectric constant/insulating layer 4. are formed into a sintered light-emitting layer in a bonded form, and moisture in the light-emitting layer is sufficiently removed. Next, a back electrode 5 is formed on the high dielectric constant insulating layer 4 by Al vacuum evaporation. As a result, in the light-emitting layer that has a double structure of a phosphor layer and a high dielectric constant/insulating layer, the phosphor layer and the inorganic fine powder for filling are bound together by sintered titanium oxide. The high dielectric constant/insulating layer is made by bonding barium titanate, which is a high dielectric, with sintered titanium oxide, and the voids in these layers are filled with sintered titanium oxide by impregnation firing. The moisture inside will be sufficiently removed to form a product.
このようにして得られた本実施例における焼結
型EL素子は、250Hz、100Vで約20ft−Lの輝度を
示し、従来の鉄ほうろう型EL素子と比較して20
倍以上高輝度のものであつた。また、前記のよう
に作成した焼結型EL素子に対し450℃の高温雰囲
気で低融点ガラスによる防湿封止処理を施したも
のを、室温で、250Hz、100Vの条件で連続点灯し
て輝度劣化を調べた結果、その輝度半減寿命は約
3000時間であり、実用可能なレベルのものが得ら
れることがわかつた。 The thus obtained sintered EL device in this example exhibited a luminance of approximately 20 ft-L at 250 Hz and 100 V, which was 20 ft-L brighter than the conventional iron-enamel EL device.
It was more than twice as bright. In addition, the sintered EL element created as described above was subjected to moisture-proof sealing treatment with low-melting glass in a high-temperature atmosphere of 450°C, and the brightness deteriorated by continuously lighting it at room temperature at 250Hz and 100V. As a result of research, its brightness half-life is approximately
3,000 hours, and it was found that a practical level could be obtained.
実施例 2
本実施例においても、第1図の部分断面図を参
照して説明する。Embodiment 2 This embodiment will also be explained with reference to the partial sectional view of FIG.
ニトロセルローズ0.5重量部、チタンテトライ
ソプロポキシド(金属の有機錯体)0.5重量部、
アクリルエステルSA(商品名)(安定剤)0.5重
量部、ZnO−B2O3−SiO2系ガラス微粉末(無機
系微粉末)6重量部、酸化チタン微粉末(無機系
微粉末)3.5重量部、平均粒径10μmのEL用ZnS
蛍光体21.0重量部、これに適量の溶剤αテルピネ
オールおよびエチルアルコールを加えた蛍光体ペ
ーストを、ガラス基板1上に透明導電層2を形成
したネサガラス板の透明導電層2上に印刷製膜し
て、160℃、30分の加熱乾燥を施して膜厚約40μ
mの蛍光体層3を形成する。次に、ニトロセルロ
ーズ0.3重量部、チタンテトライソプロポキシド
0.5重量部、安定剤アクリルエステルSA(商品
名)0.5重量部、1200℃で特別に焼成したチタン
酸バリウム微粉末33.0重量部、および適量のαテ
ルビネオールやエトキシエタノールとからなる高
誘電体チタン酸バリウムペーストを用いて、上記
の蛍光体層3上に印刷して高誘電率・絶縁層4と
し、該蛍光体層3と高誘電率・絶縁層4との二層
構造の発光層6を形成する。次に、160℃、30分
の加熱乾燥処理を施した後、アクリルエステル
SAを添加して安定化したチタンテトライソプロ
ポキシドのエトキシエタノール液の追加含浸、次
に、160℃、20分の加熱乾燥後、440℃、40分間の
焼成、からなる一連の処理工程を2回繰り返す。
次に、この焼成済み発光層6上にAl真空蒸着法
によつて背面電極5を形成する。 0.5 parts by weight of nitrocellulose, 0.5 parts by weight of titanium tetraisopropoxide (organic metal complex),
Acrylic ester SA (trade name) (stabilizer) 0.5 parts by weight, ZnO-B 2 O 3 -SiO 2 glass fine powder (inorganic fine powder) 6 parts by weight, titanium oxide fine powder (inorganic fine powder) 3.5 parts by weight ZnS for EL with an average particle size of 10μm
A phosphor paste containing 21.0 parts by weight of the phosphor and an appropriate amount of the solvent α-terpineol and ethyl alcohol was printed onto the transparent conductive layer 2 of a Nesa glass plate in which the transparent conductive layer 2 was formed on the glass substrate 1. , heat-dried at 160℃ for 30 minutes to obtain a film thickness of approximately 40μ.
m phosphor layers 3 are formed. Next, 0.3 parts by weight of nitrocellulose, titanium tetraisopropoxide
High dielectric barium titanate consisting of 0.5 parts by weight, 0.5 parts by weight of stabilizer acrylic ester SA (trade name), 33.0 parts by weight of barium titanate fine powder specially calcined at 1200°C, and appropriate amounts of α-terbineol and ethoxyethanol. A paste is used to print on the above phosphor layer 3 to form a high dielectric constant/insulating layer 4, and a light emitting layer 6 having a two-layer structure of the phosphor layer 3 and the high dielectric constant/insulating layer 4 is formed. . Next, after heating and drying at 160℃ for 30 minutes, the acrylic ester
A series of treatment steps consisting of additional impregnation with an ethoxyethanol solution of titanium tetraisopropoxide stabilized by adding SA, then heating drying at 160°C for 20 minutes, followed by calcination at 440°C for 40 minutes. Repeat times.
Next, the back electrode 5 is formed on the fired light emitting layer 6 by Al vacuum evaporation.
以上の工程によつて、蛍光体層3と高誘電率・
絶縁層4との二層構造からなる発光層6を設けて
なる本実施例の焼結型EL素子が得られる。しか
してこの発光層6において、蛍光体層3は蛍光体
31と、ZnO−B2O3−SiO2系ガラス微粉末およ
び酸化チタン微粉末からなる無機系微粉末32が
焼結酸化チタン33によつて結着されていて、高
誘電率・絶縁層4はチタン酸バリウムと酸化チタ
ンよりなる高誘電体無機系微粉末32が焼結酸化
チタン43によつて結着されていて、それら蛍光
体層3および高誘電率・絶縁層4内の空隙部は焼
結酸化チタンにより充填されて、かつ、層内の水
分は十分に除去されてなる発光層6が形成されて
いるものである。 Through the above steps, the phosphor layer 3 and the high dielectric constant
A sintered EL element of this example is obtained, which includes a light emitting layer 6 having a two-layer structure with an insulating layer 4. However, in this light-emitting layer 6, the phosphor layer 3 includes a phosphor 31, an inorganic fine powder 32 consisting of a ZnO-B 2 O 3 -SiO 2- based glass fine powder and a titanium oxide fine powder, and a sintered titanium oxide 33. The high dielectric constant insulating layer 4 includes high dielectric inorganic fine powder 32 made of barium titanate and titanium oxide bound by sintered titanium oxide 43, and these phosphors The voids in the layer 3 and the high dielectric constant/insulating layer 4 are filled with sintered titanium oxide, and the moisture in the layers is sufficiently removed to form a light-emitting layer 6.
このようにして得られた本実施例における焼結
型EL素子の輝度は250Hz、100V点灯で25〜30ft−
Lであつた。また、これを450℃の高温雰囲気中
で低融点ガラスによるガラス板接着をして防湿封
止したものの250Hz、100Vの連続点灯における輝
度半減寿命は約3000時間であつた。 The brightness of the sintered EL element in this example obtained in this way was 25 to 30 ft-250 Hz and 100 V lighting.
It was L. Furthermore, when this was sealed moisture-proof by bonding a glass plate with low-melting point glass in a high-temperature atmosphere of 450°C, the luminance half-life when continuously lit at 250Hz and 100V was approximately 3000 hours.
以上の実施例1,2においては、発光層形成用
ペーストに配合の際、および製膜乾燥後に追加含
浸を行う際使用する有機金属錯体としてチタニウ
ムのアルコキシドを用い、その熱分解で生成する
焼結酸化チタンでもつて蛍光体、充填無機系微粉
末、高誘電体チタン酸バリウムを焼結するもので
あるが、そのような有機金属錯体はチタニウムの
アルコキシドに限定することなく、バリウム、ス
トロンチウム、カルシウム、亜鉛、鉛、錫、イン
ジウム、タンタル、珪素などZnS系蛍光体に無害
な金属元素の有機錯体を用いて、実施例1,2と
同様に高性能の焼結型EL素子を製作することが
可能であることがわかつた。 In Examples 1 and 2 above, a titanium alkoxide is used as an organometallic complex used when compounding the paste for forming a light-emitting layer and when performing additional impregnation after film formation and drying, and the sinter produced by its thermal decomposition is used as an organometallic complex. Although titanium oxide is used to sinter phosphors, filled inorganic fine powders, and high dielectric barium titanate, such organometallic complexes are not limited to titanium alkoxides, but include barium, strontium, calcium, It is possible to manufacture high-performance sintered EL devices in the same manner as in Examples 1 and 2 by using organic complexes of metal elements such as zinc, lead, tin, indium, tantalum, and silicon that are harmless to ZnS-based phosphors. It turns out that it is.
また、発光層における充填用の透明または白色
の無機系微粉末としては、前記のチタン酸バリウ
ム、酸化チタン、ZnO−B2O3−SiO2系ガラス微
粉末の他に、アルミニウム、マグネシウム、カル
シウム、バリウム、ストロンチウム、インジユウ
ム、亜鉛、錫、タンタル、珪素などの酸化物また
は炭酸塩等が使用できることがわかつた。 In addition to the above-mentioned barium titanate, titanium oxide, and ZnO-B 2 O 3 -SiO 2 -based glass powder, examples of transparent or white inorganic fine powder for filling in the light-emitting layer include aluminum, magnesium, and calcium. It has been found that oxides or carbonates of barium, strontium, indium, zinc, tin, tantalum, silicon, etc. can be used.
なお、上記の実施例における発光層は蛍光体層
と高誘電率・絶縁層の2層構造であるが、上記の
実施例と同様なものにおいて、発光層が蛍光体層
のみよりなるもの、あるいはその蛍光体層におい
て無機系微粉末の配合のないものについても効果
のあることがわかつた。 The light-emitting layer in the above example has a two-layer structure consisting of a phosphor layer and a high dielectric constant/insulating layer, but in the same example as the above example, the light-emitting layer may consist only of a phosphor layer, or It was found that the phosphor layer without inorganic fine powder was also effective.
以上の説明から解るように、本発明は極めて大
なる効果を有するものである。 As can be seen from the above explanation, the present invention has extremely large effects.
第1図は本発明の実施例になる焼結型EL素子
の発光面に直角な面による断面の部分を示す部分
断面図である。
1……ガラス基板、2……透明導電層、3……
蛍光体層、4……高誘電率・絶縁層、5……背面
電極、6……発光層、31……蛍光体、32……
無機系微粉末、33,43……焼結酸化チタン、
42……無機系微粒子。
FIG. 1 is a partial sectional view showing a section taken along a plane perpendicular to the light emitting surface of a sintered EL element according to an embodiment of the present invention. 1...Glass substrate, 2...Transparent conductive layer, 3...
Phosphor layer, 4... High dielectric constant/insulating layer, 5... Back electrode, 6... Light emitting layer, 31... Phosphor, 32...
Inorganic fine powder, 33,43...Sintered titanium oxide,
42...Inorganic fine particles.
Claims (1)
光体と誘電体とを含んでなる発光層を備えたEL
素子において、該発光層は蛍光体層を有してな
り、該蛍光体層は蛍光体を含有する蛍光体に無害
な金属の有機錯体の配合物の約450℃の加熱分解
焼成による焼結体よりなり、該蛍光体層はさら
に、金属の有機錯体を含浸せしめたものを加熱し
て焼成した焼結体をも含み、該蛍光体層内の水分
は十分に除去されてなるものであることを特徴と
する焼結型EL素子。 2 該蛍光体層における蛍光体はZnS系蛍光体に
して、該金属の有機錯体はチタニウム、バリウ
ム、ストロンチウム、カルシウム、亜鉛、鉛、
錫、インジウム、タンタル、珪素等、ZnS系蛍光
体に無害な金属のアルコキシドにして、該蛍光体
に無害な金属の有機錯体の配合物は安定剤を添加
したものである特許請求の範囲第1項記載の焼結
型EL素子。 3 該蛍光体に無害な金属の有機錯体の配合物に
は、さらに蛍光体には無害の、蛍光体よりも平均
粒径が十分小であり、かつ透明または白色の充填
用無機系微粉末が配合されてなるものである特許
請求の範囲第1項または第2項記載の焼結型EL
素子。 4 該発光層は該蛍光体層の背面電極側に反射性
の高誘電率・絶縁層を備えた二層構造発光層にし
て、該反射性の高誘電率・絶縁層はチタン酸バリ
ウム、酸化チタンのごとき高誘電体を含む金属の
有機錯体配合物を加熱して焼成した焼結体にし
て、該高誘電率・絶縁層はさらに金属の有機錯体
を含浸せしめたものを加熱して焼成した焼結体を
も含むものにして、該高誘電率・絶縁層内の水分
は十分に除去されてなるものである特許請求の範
囲第3項記載の焼結型EL素子。[Claims] 1. EL comprising a light emitting layer containing a phosphor and a dielectric between a transparent conductive layer on the light emitting side and a back electrode.
In the device, the light-emitting layer has a phosphor layer, and the phosphor layer is a sintered body obtained by thermal decomposition firing at about 450° C. of a compound of a metal organic complex containing the phosphor and which is harmless to the phosphor. The phosphor layer further includes a sintered body impregnated with an organic complex of metal and fired by heating, and the moisture in the phosphor layer is sufficiently removed. A sintered EL element featuring: 2 The phosphor in the phosphor layer is a ZnS-based phosphor, and the metal organic complex is titanium, barium, strontium, calcium, zinc, lead,
Claim 1: The compound is an alkoxide of a metal such as tin, indium, tantalum, silicon, etc. that is harmless to the ZnS-based phosphor, and a stabilizer is added to the compound of an organic complex of the metal that is harmless to the phosphor. The sintered EL element described in Section 1. 3 The compound of the metal organic complex that is harmless to the phosphor further includes a transparent or white filling inorganic fine powder that is harmless to the phosphor and has an average particle size sufficiently smaller than that of the phosphor. The sintered EL according to claim 1 or 2, which is obtained by blending
element. 4. The light emitting layer is a two-layer structure light emitting layer with a reflective high dielectric constant/insulating layer on the back electrode side of the phosphor layer, and the reflective high dielectric constant/insulating layer is made of barium titanate or oxide. A sintered body is formed by heating and firing a metal organic complex compound containing a high dielectric constant such as titanium, and the high dielectric constant/insulating layer is further impregnated with a metal organic complex, which is then heated and fired. 4. The sintered EL device according to claim 3, which also includes a sintered body, and the moisture in the high dielectric constant/insulating layer is sufficiently removed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11669179A JPS5641694A (en) | 1979-09-13 | 1979-09-13 | Sintered el element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11669179A JPS5641694A (en) | 1979-09-13 | 1979-09-13 | Sintered el element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5641694A JPS5641694A (en) | 1981-04-18 |
| JPS6155239B2 true JPS6155239B2 (en) | 1986-11-26 |
Family
ID=14693467
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11669179A Granted JPS5641694A (en) | 1979-09-13 | 1979-09-13 | Sintered el element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5641694A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5931853A (en) * | 1982-08-11 | 1984-02-21 | Kubota Ltd | Precipitation hardening type alloy |
| JPS5931852A (en) * | 1982-08-11 | 1984-02-21 | Kubota Ltd | Precipitation hardening type alloy |
| JPS61224291A (en) * | 1985-03-27 | 1986-10-04 | 大阪特殊合金株式会社 | Electroluminescence element and manufacture thereof |
| JPH0743903B2 (en) * | 1987-07-13 | 1995-05-15 | 住友金属工業株式会社 | Metal hub for magnetic disk |
| JP2011175936A (en) * | 2010-02-25 | 2011-09-08 | Seiwa Electric Mfg Co Ltd | Method of manufacturing distributed inorganic el element, and distributed inorganic el element and lighting device with the same |
-
1979
- 1979-09-13 JP JP11669179A patent/JPS5641694A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5641694A (en) | 1981-04-18 |
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