JPS6155576B2 - - Google Patents
Info
- Publication number
- JPS6155576B2 JPS6155576B2 JP57061663A JP6166382A JPS6155576B2 JP S6155576 B2 JPS6155576 B2 JP S6155576B2 JP 57061663 A JP57061663 A JP 57061663A JP 6166382 A JP6166382 A JP 6166382A JP S6155576 B2 JPS6155576 B2 JP S6155576B2
- Authority
- JP
- Japan
- Prior art keywords
- magnesium
- alloy
- added
- phosphorus
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011777 magnesium Substances 0.000 claims description 23
- 229910052749 magnesium Inorganic materials 0.000 claims description 23
- 229910045601 alloy Inorganic materials 0.000 claims description 22
- 239000000956 alloy Substances 0.000 claims description 22
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 13
- 229910052698 phosphorus Inorganic materials 0.000 claims description 13
- 239000011574 phosphorus Substances 0.000 claims description 13
- 238000007670 refining Methods 0.000 claims description 11
- 238000005266 casting Methods 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 7
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 229910000676 Si alloy Inorganic materials 0.000 claims description 4
- 239000013078 crystal Substances 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 230000000694 effects Effects 0.000 description 8
- 239000003795 chemical substances by application Substances 0.000 description 6
- 230000005496 eutectics Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000002485 combustion reaction Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001366 Hypereutectic aluminum Inorganic materials 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- RIRXDDRGHVUXNJ-UHFFFAOYSA-N [Cu].[P] Chemical compound [Cu].[P] RIRXDDRGHVUXNJ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 150000002680 magnesium Chemical class 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000003923 scrap metal Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
- C22C21/02—Alloys based on aluminium with silicon as the next major constituent
- C22C21/04—Modified aluminium-silicon alloys
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacture And Refinement Of Metals (AREA)
- Silicon Compounds (AREA)
- Continuous Casting (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Refinement Of Pig-Iron, Manufacture Of Cast Iron, And Steel Manufacture Other Than In Revolving Furnaces (AREA)
Description
【発明の詳細な説明】
本発明は過共晶アルミニウム―珪素合金の初晶
珪素微細化法に係る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for refining primary silicon in a hypereutectic aluminum-silicon alloy.
アルミニウム―珪素合金は添加元素含有量に従
つて3群に類別されることが当業者に公知であ
る。Siを約12.5重量%含有する合金を共晶と呼
び、Siをこの値より少い量又は多い量含有する合
金をそれぞれ亜共晶又は過共晶と呼ぶ。 It is known to those skilled in the art that aluminum-silicon alloys are classified into three groups according to the content of added elements. An alloy containing about 12.5% by weight of Si is called a eutectic, and an alloy containing Si in an amount smaller or larger than this value is called a hypoeutectic or a hypereutectic, respectively.
本発明に於いては、製造過程における冷却の際
に実質的に初晶珪素を含有する固体相、次にアル
ミニウム―珪素共晶系を相次いで生じる二元及び
多元過共晶合金のみを考察する。 In the present invention, only binary and multi-component hypereutectic alloys are considered in which a solid phase containing substantially primary silicon and then an aluminum-silicon eutectic system are formed successively during cooling during the manufacturing process. .
このような合金は特に内燃機関のジヤケツトの
鋳造による製造の際に用いられる。その理由は硬
い初晶珪素がより柔らかい共晶マトリツクス中に
埋入されているこの種の結晶構造が特に潤滑剤の
滞留及び摩擦作用に有利な微孔質を呈する表面を
形成する傾向があるためである。しかしながら、
有利な結果を得るためにはこれらの結晶は100μ
mを超えない大きさでなければならない。 Such alloys are used in particular in the production of jackets for internal combustion engines by casting. The reason is that this type of crystal structure, in which hard primary silicon is embedded in a softer eutectic matrix, tends to form a microporous surface that is especially favorable for lubricant retention and frictional action. It is. however,
For favorable results these crystals should be 100μ
The size must not exceed m.
ところで、特に大きい寸法の鋳造部品について
は、この要求を満たすのは困難である。 However, this requirement is difficult to meet, especially for cast parts of large dimensions.
このために、これらの合金を製造する際に、液
体金属中で発達中心の個数を増加させ、且つ冷却
過程中に小さい寸法の結晶を形成させる“微細化
剤”と呼ぶ元素又は化合物を添加するようになつ
た。 For this purpose, when producing these alloys, elements or compounds called "refiners" are added that increase the number of development centers in the liquid metal and form crystals of small size during the cooling process. It became like that.
文献中には多数の微細化剤が記載されている。
しかしながら、これらの微細化剤は各々特有の効
果を有するので無差別に使用することはできな
い。 A large number of refining agents are described in the literature.
However, each of these atomizing agents has its own unique effect and therefore cannot be used indiscriminately.
ある微細化剤は初晶珪素に対して作用を有して
いるのに対し、他の微細化剤は、反対に共晶の珪
素結晶にしか作用しない。1つの相の結晶を微細
化すると同時に他の相の結晶を増大し得るものさ
えある。 Some refining agents act on primary silicon, while other refining agents act only on eutectic silicon crystals. Some may even be able to refine the crystals of one phase while simultaneously increasing the crystals of the other phase.
S.T.CHIUは、METALLKUNDE 1966年 5
月第57号の彼の論文“Al―Si合金の改良に対する
種々の元素の効果(The effect of various
elements on the modification of Al―Si
Alloys)”中でこれらの元素の特異性を示してお
り、特に第399頁第4表に初晶珪素を微細化し得
る濃度と共に元素のリストを掲げている。この表
にはクロム、モリブテン、マンガン、タングステ
ン、燐、硫黄、沃素、銅、銀、亜鉛、錫、鉛、ニ
ツケル、カドミウム、水銀が見られる。 STCHIU METALKUNDE 1966 5
His paper “The effect of various elements on the improvement of Al-Si alloys” in issue 57
elements on the modification of Al―Si
In particular, Table 4 on page 399 lists the elements along with their concentrations that can refine primary silicon.This table includes chromium, molybdenum, manganese , tungsten, phosphorus, sulfur, iodine, copper, silver, zinc, tin, lead, nickel, cadmium, and mercury.
この論文中、第396頁第2表には、前記のすべ
ての元素と反対に、過共晶合金に添加したマグネ
シウムは初晶珪素を増大して共晶結晶を微細化す
る効果を有することが示されている。 In this paper, Table 2 on page 396 states that, contrary to all the elements mentioned above, magnesium added to hypereutectic alloys has the effect of increasing primary silicon and refining eutectic crystals. It is shown.
ところで、本出願人は特に燐による過共晶合金
の結晶微細化について広く研究した結果、驚くべ
きことに、微細化剤がすでに添加されている合金
にマグネシウムを添加すると、微細化は損われず
かえつて増強されることを認めた。このことは
CHIUによる教示に反している。更に本出願人は
この補足的微細化作用が直ちに消えるものである
こと、即ち前記作用が時間の経過につれて消滅
し、従つてその効果による最大の利益を得るため
には鋳造の直前にこのマグネシウムを添加しなけ
ればならないことを知見した。 By the way, the present applicant has extensively researched the crystal refinement of hypereutectic alloys using phosphorus, and has surprisingly found that when magnesium is added to an alloy to which a refiner has already been added, the refinement is not impaired. He acknowledged that it would actually be strengthened. This thing is
Contrary to teachings by CHIU. Furthermore, the Applicant has determined that this supplementary refining effect disappears immediately, i.e. it disappears over time, and therefore, in order to obtain the maximum benefit from its effect, this magnesium should be removed immediately before casting. I discovered that I had to add it.
このように本発明は燐を含有する微細化剤が予
め添加されている過共晶アルミニウム―珪素合金
の初晶珪素微細化法に係り、本発明の特徴は前記
合金の鋳造直前にマグネシウムを含有する物質を
添加することである。合金は従来の方法で調製さ
れ、燐50乃至1000ppm又はそれに相当する量の
燐含有物質の一つが添加されており、これにマグ
ネシウムを添加する。マグネシウムは元素状態又
はアルミニウム―マグネシウム母合金であつてよ
く、金属くず、粉末の形状又は十分な速度で溶解
し得る大きさの塊状片の形状であつてもよい。 As described above, the present invention relates to a method for refining the primary silicon of a hypereutectic aluminum-silicon alloy in which a refining agent containing phosphorus is added in advance, and a feature of the present invention is that a refining agent containing magnesium is added immediately before casting of the alloy. It is the addition of a substance that The alloy is prepared in a conventional manner and has one of the phosphorus-containing substances added in an amount of 50 to 1000 ppm phosphorus or an equivalent amount, to which is added magnesium. The magnesium may be in the elemental state or as an aluminum-magnesium master alloy, and may be in the form of scrap metal, powder, or in chunks large enough to dissolve at a sufficient rate.
使用量は、最終合金中のマグネシウム含有量が
500ppmに達することを可能にする如きものであ
るが、組成中にマグネシウムを含有する合金を加
工する場合には、所望の含有量に達するのに必要
な量を添加してもよい。本願明細書中でいう最終
合金中のマグネシウム含有量の値(500ppm)
は、この合金に添加されたマグネシウムの残存し
ている量をさしており、もともとの(出発)合金
中に存在していたマグネシウムの量は含まない。
添加は鋳造の瞬間にできる限り近い瞬間に、且つ
いずれにせよ鋳造前30分以内に行う。何故なら
ば、この期間をすぎると微細化効果は小さくなり
実用上零になるからである。最適の微細化条件を
得るためには鋳造前5分以内に添加を行うのが好
ましい。 The amount used depends on the magnesium content in the final alloy.
500 ppm, but when processing alloys containing magnesium in the composition, the amount necessary to reach the desired content may be added. Magnesium content value in the final alloy referred to in this specification (500ppm)
refers to the remaining amount of magnesium added to the alloy and does not include the amount of magnesium that was present in the original (starting) alloy.
The addition takes place as close as possible to the moment of casting and in any case within 30 minutes before casting. This is because after this period, the miniaturization effect decreases and becomes zero in practice. In order to obtain optimum refinement conditions, it is preferable to add it within 5 minutes before casting.
このようにして燐のみの存在下で得られるもの
と比較して初晶珪素の大きさは約半分に減少でき
る。また、結晶を所望の大きさにするためのこの
ような微細化に必要な燐の量を減らして、この量
をマグネシウムの量によつて補償することもでき
る。このことはこのメタロイドの消費を減じて製
造用炉中に存在する量を減少させるという利点を
有する。 In this way, the size of primary silicon can be reduced by about half compared to that obtained in the presence of phosphorus alone. It is also possible to reduce the amount of phosphorus required for such refinement to achieve the desired crystal size and compensate this amount by the amount of magnesium. This has the advantage of reducing the consumption of this metalloid and reducing the amount present in the production furnace.
次の諸実施例によつて本発明を説明する。 The invention is illustrated by the following examples.
実施例 1
数10ppmの燐を含む、温度765℃の極めて純粋
なAS17(Si17重量%、残部Alの二元合金)の金
属浴からサンプルを採取し、これを13秒で凝固さ
せた。このサンプルを検査した結果、平均約50μ
mの大きさの初晶珪素を有していることが判つ
た。Example 1 A sample was taken from a metal bath of extremely pure AS17 (binary alloy of 17% by weight Si, balance Al) at a temperature of 765° C., containing several tens of ppm of phosphorus, and solidified in 13 seconds. As a result of testing this sample, an average of approximately 50μ
It was found that the material had primary crystal silicon with a size of m.
次に同じ浴にマグネシウム0.1%を添加し、導
入2分後に前と同じ条件で新たなサンプルを採取
し、凝固させ、検査した。このとき結晶の大きさ
は25μmに達していた。マグネシウムの導入1時
間後に同じ操作を繰り返すと、40μmの結晶が観
察され、この微細化用元素の効果の消えやすさが
示された。 Then 0.1% magnesium was added to the same bath and 2 minutes after introduction a new sample was taken under the same conditions as before, allowed to solidify and examined. At this time, the crystal size had reached 25 μm. When the same operation was repeated one hour after the introduction of magnesium, 40 μm crystals were observed, indicating the ease with which the effect of this refinement element disappeared.
実施例 2
AS17の金属浴を三つに分けて、その各々に10
乃至50ppmの異なる量の燐を添加した。その
各々についてサンプルを採取し、それを13秒で凝
固させ、その構造を検査した。観察された初晶珪
素の大きさはそれぞれ20―40―60μmであつた。Example 2 Divide the AS17 metal bath into three parts, each with 10
Different amounts of phosphorus were added from 50 ppm to 50 ppm. A sample was taken of each, allowed to solidify in 13 seconds, and its structure examined. The sizes of the observed primary silicon were 20-40-60 μm, respectively.
前記の各々にMg0.1%を添加し、元素導入の2
分後に、マグネシウム未処理合金に対して行つた
のと同じ操作を行つた。各サンプルの結晶粒の大
きさはそれぞれ11―19―32μmであつた。 Add 0.1% Mg to each of the above, and add 2 of the elements introduced.
Minutes later, the same operation as was performed on the untreated magnesium alloy was performed. The grain size of each sample was 11-19-32 μm, respectively.
従つてマグネシウムは初晶珪素の結晶粒の大き
さをほぼ2分の1にする効果を有することがわか
る。 Therefore, it can be seen that magnesium has the effect of reducing the crystal grain size of primary silicon to approximately half.
実施例 3
温度780℃のAS17U4G(Si17%,Cu約4%,
Mg約1%,残部Alからなる合金)の浴に15%の
燐を含有する銅燐を、浴の燐含有量が700ppmに
達するように添加し、いくらかの量の液体を牽引
用試験片の形状で鋳造するために採取した。凝固
後、これらの試験片について観察される初晶珪素
結晶の大きさは50μmを超えていた。Example 3 AS17U4G (Si17%, Cu approx. 4%,
Copper phosphorus containing 15% phosphorus was added to a bath of alloy (alloy consisting of approximately 1% Mg and balance Al) such that the phosphorus content of the bath reached 700 ppm, and some amount of the liquid was applied to the traction specimen. Taken for casting in shape. After solidification, the size of primary silicon crystals observed for these specimens exceeded 50 μm.
残りの浴にマグネシウム0.6%を添加し、この
導入及び溶解後直ちに他のサンプルを採取した。
これらのサンプルの凝固後の結晶粒の大きさは30
μmを示し、従つて微細化用元素としてのマグネ
シウムの役割が確認された。 0.6% magnesium was added to the remaining bath and another sample was taken immediately after this introduction and dissolution.
The grain size of these samples after solidification is 30
μm, thus confirming the role of magnesium as an element for refining.
本発明は過共晶アルミニウム合金の微細化に用
いることができ、特にこれらの合金が内燃機関の
ジヤケツト又は摩擦を受ける他のあらゆる部品の
製造のためのものである場合に非常に有用であ
る。 The present invention can be used to refine hypereutectic aluminum alloys and is particularly useful when these alloys are intended for the manufacture of internal combustion engine jackets or any other parts that are subject to friction.
Claims (1)
ネシウム含有物質を最終合金中でのマグネシウム
含有量が少くとも500ppmに達しうる量で鋳造前
30分以内に添加することを特徴とする燐含有物質
とマグネシウム含有物質を用いる過共晶アルミニ
ウム―珪素合金の初晶珪素微細化法。 2 マグネシウム含有物質を鋳造前5分以内に添
加することを特徴とする特許請求の範囲第1項に
記載の方法。[Claims] 1. Adding a magnesium-containing substance to an alloy to which a phosphorus-containing substance has already been added before casting in such an amount that the magnesium content in the final alloy can reach at least 500 ppm.
A method for refining primary silicon in a hypereutectic aluminum-silicon alloy using a phosphorus-containing substance and a magnesium-containing substance, which are added within 30 minutes. 2. The method according to claim 1, characterized in that the magnesium-containing substance is added within 5 minutes before casting.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8107856A FR2504154B1 (en) | 1981-04-15 | 1981-04-15 | PROCESS FOR REFINING THE PRIMARY SILICON OF HYPEREUTECTIC ALUMINUM-SILICON |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57177943A JPS57177943A (en) | 1982-11-01 |
| JPS6155576B2 true JPS6155576B2 (en) | 1986-11-28 |
Family
ID=9257585
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57061663A Granted JPS57177943A (en) | 1981-04-15 | 1982-04-13 | Primary silicon purification of pereutectic aluminum-silicon |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP0069680B1 (en) |
| JP (1) | JPS57177943A (en) |
| CA (1) | CA1179507A (en) |
| DE (1) | DE3264528D1 (en) |
| DK (1) | DK164482A (en) |
| FR (1) | FR2504154B1 (en) |
| IE (1) | IE52548B1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH684800A5 (en) * | 1991-10-23 | 1994-12-30 | Rheinfelden Aluminium Gmbh | A method for grain refining of aluminum cast alloys, in particular aluminum-silicon casting alloys. |
| GB9409446D0 (en) * | 1994-05-12 | 1994-06-29 | Anglo Blackwells Limited | A method for manufacturing a phosphorus containing composition |
| US9303299B2 (en) | 2011-10-11 | 2016-04-05 | Nippon Light Metal Company, Ltd. | Method of production of aluminum alloy with refined Al—Fe—Si-based compounds and primary crystal Si |
| CN104805343A (en) * | 2015-05-12 | 2015-07-29 | 苏州列治埃盟新材料技术转移有限公司 | Intermediate alloy material and preparation method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1139009A (en) * | 1955-10-06 | 1957-06-24 | Aluminiumwerke Nuernberg Gmbh | Grain refining process applicable to hypereutectic aluminum-silicon alloys |
| DE1139656B (en) * | 1955-10-08 | 1962-11-15 | Metallgesellschaft Ag | Process for grain refinement of primary silicon in hypereutectic aluminum-silicon alloys |
-
1981
- 1981-04-15 FR FR8107856A patent/FR2504154B1/en not_active Expired
-
1982
- 1982-04-13 JP JP57061663A patent/JPS57177943A/en active Granted
- 1982-04-13 DK DK164482A patent/DK164482A/en not_active IP Right Cessation
- 1982-04-14 DE DE8282420053T patent/DE3264528D1/en not_active Expired
- 1982-04-14 IE IE86182A patent/IE52548B1/en unknown
- 1982-04-14 CA CA000400963A patent/CA1179507A/en not_active Expired
- 1982-04-14 EP EP19820420053 patent/EP0069680B1/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2504154A1 (en) | 1982-10-22 |
| JPS57177943A (en) | 1982-11-01 |
| CA1179507A (en) | 1984-12-18 |
| FR2504154B1 (en) | 1985-09-06 |
| IE52548B1 (en) | 1987-12-09 |
| EP0069680B1 (en) | 1985-07-03 |
| DK164482A (en) | 1982-10-16 |
| EP0069680A1 (en) | 1983-01-12 |
| DE3264528D1 (en) | 1985-08-08 |
| IE820861L (en) | 1982-10-15 |
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