JPS6156175B2 - - Google Patents
Info
- Publication number
- JPS6156175B2 JPS6156175B2 JP51095437A JP9543776A JPS6156175B2 JP S6156175 B2 JPS6156175 B2 JP S6156175B2 JP 51095437 A JP51095437 A JP 51095437A JP 9543776 A JP9543776 A JP 9543776A JP S6156175 B2 JPS6156175 B2 JP S6156175B2
- Authority
- JP
- Japan
- Prior art keywords
- glass substrate
- soda lime
- lime glass
- gas
- composition ratio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Surface Treatment Of Glass (AREA)
Description
【発明の詳細な説明】
本発明はアルカリ成分を含むソーダライムガラ
ス基板の表面処理方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for surface treating a soda lime glass substrate containing an alkaline component.
例えば半導体素子製造の分野においては、半導
体ウエハー製造工程におけるパターン露光に使用
するハードホトマスクを製造する場合にガラス基
板が使用される。すなわち、ガラス基板の表面に
例えばクロム（Cr）などの遮光性を有する膜上
に感光性材料を塗布し、これを露光して所定のパ
ターンを形成した後にこれをマスクとして遮光性
の膜を化学処理して所定のパターンのホトマスク
を製造する。この場合、ガラス基板にはナトリウ
ム（Na）などのアルカリ成分を含まない石英ガ
ラスなどを使用するのが望ましいが、これは価格
も高くまた表面を平滑にするのがむずかしいとい
う欠点があるため、一般にはNaなどのアルカリ
成分を含むソーダライムガラスが使用される。 For example, in the field of semiconductor device manufacturing, glass substrates are used to manufacture hard photomasks used for pattern exposure in semiconductor wafer manufacturing processes. In other words, a photosensitive material is coated on a light-shielding film such as chromium (Cr) on the surface of a glass substrate, this is exposed to light to form a predetermined pattern, and then the light-shielding film is chemically exposed using this as a mask. Processing to produce a photomask with a predetermined pattern. In this case, it is desirable to use quartz glass, which does not contain alkaline components such as sodium (Na), for the glass substrate, but this has the disadvantages of being expensive and difficult to smooth the surface, so it is generally not used. Soda lime glass containing alkaline components such as Na is used.
しかし、ソーダライムガラスはアルカリ成分を
含んでいるため表面が風化（厳密には空気中の水
分による化学侵蝕）されやすく、保管中にNa化
合物などが析出するという問題がある。従つてガ
ラス基板表面に蒸着法またはスパツタリングによ
つて薄膜層を施こす際にはガラス基板表面の洗浄
を行うが、上記のように或る一定期間以上保管さ
れたソーダライムガラス基板の場合には表面に析
出したNa化合物などは通常の洗浄方法では完全
に除去できず、このため薄膜層の付着が弱くなる
という欠点が生ずる。 However, since soda lime glass contains alkaline components, its surface is easily weathered (more specifically, chemical erosion due to moisture in the air), and there are problems with the precipitation of Na compounds during storage. Therefore, when applying a thin film layer to the surface of a glass substrate by vapor deposition or sputtering, the surface of the glass substrate is cleaned, but as mentioned above, in the case of a soda lime glass substrate that has been stored for a certain period of time or more, Na compounds deposited on the surface cannot be completely removed by normal cleaning methods, resulting in a disadvantage that the adhesion of the thin film layer becomes weak.
従つて本発明の目的は、上記のような問題に対
処するために、ソーダライムガラス基板の表面の
アルカリ成分を除去し且つ表面風化を防止するよ
うなソーダライムガラス基板の表面処理方法を提
供することにある。 Therefore, an object of the present invention is to provide a method for surface treatment of a soda lime glass substrate that removes alkaline components from the surface of the soda lime glass substrate and prevents surface weathering in order to address the above-mentioned problems. There is a particular thing.
本発明による処理方法は、ソーダライムガラス
基板の表面を、ガス圧が大気圧より低い減圧下で
例えばアルゴン（Ar）などの不活性気体を主成
分とするプラズマガス中に露呈させるものであ
る。この方法によればガラス基板表面に化学的に
安定した保護層が形成され、Na化合物などの析
出が防止さると共に風化作用も阻止される。 In the treatment method according to the present invention, the surface of a soda lime glass substrate is exposed to a plasma gas containing an inert gas such as argon (Ar) as a main component under reduced pressure where the gas pressure is lower than atmospheric pressure. According to this method, a chemically stable protective layer is formed on the surface of the glass substrate, which prevents precipitation of Na compounds and the like, as well as weathering effects.
不活性気体としてはヘリウム（He）、ネオン
（Ne）などでも良いが、アルゴン（Ar）を使用す
ると特に良い結果が得られる。また、アルゴンの
単一ガスでも良く、あるいはアルゴンガスと酸素
ガス（O2）との混合ガスを使用することもでき
る。 Although helium (He), neon (Ne), etc. may be used as the inert gas, particularly good results are obtained when argon (Ar) is used. Further, a single gas of argon may be used, or a mixed gas of argon gas and oxygen gas (O 2 ) may be used.
一例として、ガス圧８×10-3mmHgのアルゴン
プラズマガス中に５分間露呈した場合のソーダガ
ラス基板におけるNaの密度分布の平均的傾向を
添付図面に略示してある。この図はオージエ電子
分光分析結果にもとずくもので横軸にガラス基板
の表面からの距離を示し、縦軸にガラス基板の主
成分であるSiとNaの組成比Na／Siを示してあ
る。なお、点線１は未処理の場合を示し、実線２
が上記の条件で処理した場合を示している。この
図から明らかなように、未処理の場合は基板表面
の組成比Na／Siが極めて高いのに対し、処理済
みの場合は組成比Na／Siが非常に低い値である
ことがわかる。しかも、未処理の場合は風化作用
により組成比Na／Siの値が漸次高くなるのに対
し、処理済みの場合は風化が防止されるので低い
組成比Na／Siに維持され、薄膜成形時に特別の
洗浄を行なう必要がない。 As an example, the average trend of Na density distribution in a soda glass substrate when exposed to argon plasma gas at a gas pressure of 8 x 10 -3 mmHg for 5 minutes is schematically shown in the accompanying drawing. This figure is based on the results of Augier electron spectroscopy, and the horizontal axis shows the distance from the surface of the glass substrate, and the vertical axis shows the composition ratio Na/Si of Si and Na, which are the main components of the glass substrate. . Note that dotted line 1 indicates the unprocessed case, and solid line 2
shows the case when processed under the above conditions. As is clear from this figure, the composition ratio Na/Si on the substrate surface is extremely high in the untreated case, whereas the composition ratio Na/Si is a very low value in the treated case. Moreover, in the case of untreated cases, the value of the composition ratio Na/Si gradually increases due to weathering, whereas in the case of treated cases, weathering is prevented and the composition ratio of Na/Si is maintained at a low value. There is no need to perform cleaning.
以上の説明から明らかなように本発明の処理方
法によれば、例えば前述したような薄膜成形など
に有害なNa化合物などの析出を防止できるので
ソーダライムガラス基板の用途範囲を拡大でき、
種々の分野において有効なすぐれた方法であると
云える。 As is clear from the above explanation, according to the treatment method of the present invention, the precipitation of Na compounds harmful to thin film forming as described above can be prevented, so the range of uses of soda lime glass substrates can be expanded.
It can be said that this is an excellent method that is effective in various fields.
添附図は本発明の方法で処理したソーダライム
ガラス基板のNaの密度分布の平均的傾向を未処
理の場合と比較して示すオージエ電子分光分析結
果にもとづく線図である。
The attached figure is a diagram based on the results of Auger electron spectroscopy showing the average tendency of the Na density distribution of soda lime glass substrates treated by the method of the present invention in comparison with untreated cases.
Claims (1)
の表面を、ガス圧が大気圧より低い減圧下で、不
活性ガスを主成分とするプラズマガス中に露呈さ
せて、基板表面のナトリウムの組成比を低下させ
ることを特徴とするソーダライムガラス基板の表
面処理方法。1. The surface of a soda lime glass substrate containing an alkaline component is exposed to a plasma gas mainly composed of an inert gas under reduced pressure where the gas pressure is lower than atmospheric pressure to lower the sodium composition ratio on the substrate surface. A method for surface treatment of a soda lime glass substrate, characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9543776A JPS5322515A (en) | 1976-08-12 | 1976-08-12 | Method of surface treatment of glass substrate of sodaalime glass |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9543776A JPS5322515A (en) | 1976-08-12 | 1976-08-12 | Method of surface treatment of glass substrate of sodaalime glass |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5322515A JPS5322515A (en) | 1978-03-02 |
| JPS6156175B2 true JPS6156175B2 (en) | 1986-12-01 |
Family
ID=14137664
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9543776A Granted JPS5322515A (en) | 1976-08-12 | 1976-08-12 | Method of surface treatment of glass substrate of sodaalime glass |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5322515A (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5545503B2 (en) * | 1972-03-02 | 1980-11-18 | ||
| US3868271A (en) * | 1973-06-13 | 1975-02-25 | Ibm | Method of cleaning a glass substrate by ionic bombardment in a wet active gas |
-
1976
- 1976-08-12 JP JP9543776A patent/JPS5322515A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5322515A (en) | 1978-03-02 |
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