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JPS6158836B2 - - Google Patents
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JPS6158836B2 - - Google Patents

Info

Publication number
JPS6158836B2
JPS6158836B2 JP53090619A JP9061978A JPS6158836B2 JP S6158836 B2 JPS6158836 B2 JP S6158836B2 JP 53090619 A JP53090619 A JP 53090619A JP 9061978 A JP9061978 A JP 9061978A JP S6158836 B2 JPS6158836 B2 JP S6158836B2
Authority
JP
Japan
Prior art keywords
light
light emitting
emitting diode
current
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53090619A
Other languages
English (en)
Other versions
JPS5517180A (en
Inventor
Junichi Nishizawa
Yasuo Okuno
Keishiro Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP9061978A priority Critical patent/JPS5517180A/ja
Priority to US06/058,545 priority patent/US4329625A/en
Priority to DE2929010A priority patent/DE2929010C2/de
Publication of JPS5517180A publication Critical patent/JPS5517180A/ja
Publication of JPS6158836B2 publication Critical patent/JPS6158836B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/285—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices having PN homojunction gates
    • H10F30/2863—Field-effect phototransistors having PN homojunction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S362/00—Illumination
    • Y10S362/80—Light emitting diode

Landscapes

  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Control Of El Displays (AREA)
  • Traffic Control Systems (AREA)
  • Audible And Visible Signals (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)

Description

【発明の詳細な説明】 本発明は半導体発光ダイオードを用いた表示装
置、特に外界の明るさが大きく変化する場所で用
いる発光ダイオード表示装置に関する。
従来屋外の有色発光表示装置（以下表示装置と
よぶ）の多くは白熱電球と色ガラスとの組み合わ
せや有色発光を行なうガス放電管を用いていた。
交通信号灯が前者の典型例であり、ネオンサイン
が後者の典型例である。通常のガス放電管の光出
力は弱く昼間の太陽光のもとでは識別困難な程度
であり、かつ使用寿命も長くはない。これらはガ
ス放電管の体質的な欠点であり、飛躍的な性能向
上はあまり期待できない。従つて昼夜間共に表示
をすべき交通信号灯のような表示装置には白熱電
球と色ガラス等のフイルターとの組み合わせが多
く用いられてきた。
外界の明るさが大きく変化する場所で明確な有
色表示を行なうには常に外界の照度に対抗できる
光出力を必要とする。白熱電球を用いる場合、光
出力は主として発光部の温度と表面積によつて決
まるため、供給電力を減少させると急激な光出力
の低下ないし色温度の変化を起こす。従つて外界
の明るさに応じた適切な光出力の制御は困難であ
り、外界が最も明るい時に明確な表示を行なえる
ように表示装置を設計すると外界が暗くなつた時
は必要とされる輝度をはるかに越える表示を行な
うようになつていた。これらの不必要な電力浪費
は交通信号灯のみを考えても莫大なものであり、
社会的にも各使用者にとつても改善が望まれてい
た。
半導体発光ダイオードは、効率が飛躍的に向上
し、１チツプ当り10ｍＡ以下の低電流動作によつ
て非常に明るい表示が得られている。従つて、現
在野外で使用されている殆んどすべての有色表示
装置は省エネルギー、長寿命化の点からはすべて
発光ダイオードに置き換わることが望ましい。
赤色、黄色、緑色の高効率発光ダイオードはた
とえば発光領域をそれぞれ（Ga0.7Al0.3As、
GaAs0.7P0.3、InGaAsP）、（In0.6Ga0.4P、
Al0.4In0.6P）、（GaP、In0.7Ga0.3P、Al0.5In0.5P）
等にすることにより実現できる。青色発光ダイオ
ードはまだ効率が低いが、飛躍的な効率向上が期
待できる。多層ヘテロ構造に構成した発光ダイオ
ードの各領域の成分比を厳密におさえ、各領域間
の格子整合を行い、欠陥の少ない結晶を育成する
と効率の高い発光ダイオードが得られることは蒸
気圧制御温度差法等により証明されている。発光
ダイオードの色はほぼ可視領域全域をカバーする
ことができるようになつているので、目的に合わ
せて任意の色の組み合わせを選ぶことができる。
白熱電球を光源とする有色表示装置が発光ダイ
オードを用いる表示装置に置き換えられ、電力消
費が大巾に低減したとしても、外界の明るさが大
きく変化する所での表示装置の問題は残る。すな
わち、外界が最も明るい時を対象とした発光表示
を外界が暗くなつた時も行なうのでは必要電力の
数倍もの電力を浪費することになる。
本発明の目的は外界の明るさに応答して必要な
だけの輝度で表示を行なう発光ダイオード表示装
置を提供することである。
発光ダイオードの光出力はほぼ順電流に直線的
に比例し、かつ発光の分光特性は順電流値にほと
んど依存しない。従つて、昼夜間を通して表示を
行なう屋外表示装置の場合、夜間に必要とされた
輝度、すなわち昼間時の数分の１の輝度を得るに
は昼間時に必要とされる電力の数分の１でよい。
第１図ａ，ｂに本発明の１実施例による表示装
置を示す。第１図ａは発光ダイオードを含めた表
示装置の基本単位の回路図であり、第１図ｂは外
界の明るさに応じて電流値を変化させ、かつ過電
流防止のための定電流化作用を有するフオト電界
効果トランジスタの断面図である。第１図ａにお
いて、複数（ｎ）個の発光ダイオードD1，……
…Dnが直列に接続され、さらにフオト電界効果
トランジスタQ1がダイオード列に直列に接続さ
れている。直列接続するダイオードの個数は任意
であるが一般の用途には商用電源の100Vないし
200Vに直接接続できるような個数に選択するの
がよい。可視発光ダイオードの動作電圧は1.5〜
4V程度であるので100V用の場合20〜60個が適当
である。フオト電界効果トランジスタQ1は第１
図ｂのような構造を有し、第１図ｃのような特性
を示す。
第１図ｂ，ｃを参照してフオト電界効果トラン
ジスタQ1を説明する。P+型Si基板１の上にn-型
エピタキシヤル層２が成長されており、n-型層
２にn+型ソース領域３、n+型ドレイン領域４、
P+型ゲート領域５が拡散で形成されている。そ
の上にコンタクトホールを有する透明絶縁膜６が
形成され、金属電極３′，４′がコンタクトホール
を介してソース領域３、ドレイン領域４に接触し
ている。P+型ゲート領域の厚さは可視領域の入
射光がチヤンネルを形成するn-領域２まであま
り大きな減衰を受けず到達できるように選ぶ。ゲ
ート領域上の透明絶縁膜６が受光部を形成する。
可視光ｈνが透明絶縁膜６を通つて入射しn-型
領域２中で吸収されると電子正孔対を発生する。
電子はチヤンネル領域２を介してソース領域３な
いしはドレイン領域４に吸収されるが、正孔はゲ
ート・チヤンネル間の空乏層の電位勾配により、
又は拡散により、P+型ゲート領域に進みそこで
蓄積される。蓄積される正孔の量に比例してゲー
ト領域５は順バイアスされる。順バイアスの量に
応じてゲート領域５からチヤンネル領域２に延び
る空乏層の巾が制御され、残りの中性領域で形成
されるチヤンネルの抵抗が制御される。チヤンネ
ル長を規定するゲート領域５の長さはトランジス
タが飽和特性を示すように十分長く選ぶ。電流値
を増加させるにはチヤンネルの横巾（紙面垂直方
向）を増加させる。ゲート領域に蓄積された電荷
はリーク抵抗Ｒを介して減少するので、時定数は
ゲート領域の容量Ｃとリーク抵抗Ｒとの積RCで
決まる。外界の明るさは秒以下の速さで大きく変
化することはないので時定数は大きくとも支障は
ない。逆にある程度以上大きくして誤動作を避け
るようにするのもよい。ゲート容量の選択は設計
条件によつて大きく変化するが自由度は大きい。
大きな入射光量を得にくい場合はレンズによる集
光を行なつてもよい。設計上は光感度が少し高す
ぎるようにしておき、余分の光をカツトして感度
を落すようにするのが容易である。まず、外界に
光がない時ゲート・チヤンネル間の拡散電位によ
つて空乏層巾が決まるがこの時の飽和電流値が夜
間必要とされる電流値になるようにし、昼間の強
い太陽光が入射した時空乏層巾が大きく減少し飽
和電流値が数倍ないしそれ以上増加するように選
ぶ。ゲートのリーク抵抗はトランジスタ構造外に
調整用抵抗を設けて調整してもよい。この構造の
フオト電界効果トランジスタは光入射によつて生
じたキヤリアを蓄積する機能を有し、蓄積された
キヤリアが増幅作用を伴つて主電流を制御するた
め応答速度は遅いが高感度である。
人間の視感度は照度に対して一定ではないので
ある程度以上明るい時は一定の輝度となるように
しても実用上さしつかえない。すなわちフオト電
界効果トランジスタ内の空乏層はある入射光量で
十分縮小しそれ以上の入射光量には反応しないよ
うにしてもよい。
第１図ｄに第１図ｂのフオト電界効果トランジ
スタと同様な動作をする絶縁ゲート型フオト電界
効果トランジスタを示す。この構造ではゲート領
域を設けずn-型チヤンネル領域上の絶縁膜に負
の電荷をもたせ、チヤンネル領域２内へ空乏層１
５が延びるようにしてある。さらに透明絶縁膜上
に低抵抗ポリシリコンの電極３′を設けソース電
極と１体にしてチヤンネル領域の電位を安定化し
てある。入射光はポリシリコン膜と透明絶縁膜と
で構成される受光窓を通して入射する。
第１図ａの回路は交流駆動した時各半周期は動
作しない。全周期で動作するようにするには第２
図ａ，ｂのような回路にすればよい。第２図ａは
第１図ａの回路を単に逆並列に接続したものであ
る。電界効果トランジスタはソースとドレインと
を対称的に作ることによつて逆方向動作もするこ
とを利用して、１つのフオト電界効果トランジス
タで互に逆の極性の発光ダイオード列を制御する
ようにしたのが第２図ｂである。第２図ａ，ｂ
で、D11，………Ｄ1oおよびD21，………Ｄ2nは発
光ダイオード、Q1，Q2，Q1′はフオト電界効果ト
ランジスタである。Q1′は両極性で動作するフオ
ト電界効果トランジスタである。ダイオード列
D21，………Ｄ2nを他方のダイオード列D11，……
…Ｄ1oと別の色にして、全体で合成色を出すよう
にしてもよい。フオト電界効果トランジスタQ1
とQ2またはQ1′の両極性の電流電圧特性を積極的
に相違させてもよい。第１図ａ、第２図ａ，ｂの
回路で、１方の極性のダイオード列を複数のダイ
オード列の並列接続に置き換えてもよいことは自
明であろう。
比較的大電流を流すのに適した定電流フオトト
ランジスタ回路を第３図ａ，ｂに示す。
大電流を流すためにはチヤンネルの断面積を大
きくし、長さを短かくするのがよいが、ソースか
ら実効的に電流を制御する固有ゲートまでの距離
が短かくなると電流は飽和しにくくなる。電流不
飽和の傾向を補正するためにソース・ゲート間に
自己バイアス用の抵抗Rbを接続してある。この
場合フオトトランジスタは不飽和特性という点か
ら静電誘導トランジスタ的になつているので第３
図ｂは静電誘導トランジスタの表記を用いた。
第３図ｂで第１図ｂと同一記号は類似の部分を
示す。ソース領域３は基板で形成されている。ゲ
ート領域５はメツシユ状に形成されゲート引出領
域５′に連続している。ゲート引出領域５′、絶縁
膜６、ゲート電極８は接合ゲートと絶縁電極構造
を形成する。トランジスタ構造を縦型とし、マル
チチヤンネルかつ短チヤンネルとしたため大電流
が供給できる。電流飽和が不足する分はバイアス
抵抗Rbで補償する。
フオトトランジスタはバイポーラ型フオトトラ
ンジスタにしてもよい。この場合、蓄積効率が低
下する傾向があるが大電流高速動作に適する。第
４図ａ，ｂ，ｃにバイポーラフオトトランジスタ
を用いた場合の回路図を示す。動作その他は上記
説明より明らかであろう。
以上の説明から明らかなように本発明は飽和型
電流電圧特性を示すフオトトランジスタ回路と発
光ダイオード回路とを直列に接続することを要旨
とするものであり、簡単な構造で外界の明るさに
応じた輝度制御ならびに過電流防止が行なえる。
フオトトランジスタ回路、発光ダイオード回路
は図示ならびに上記記載のものに限らず、本発明
の精神に基づいて種々の変更、改良が行なえる。
【図面の簡単な説明】
第１図ａ，ｂ，ｃは本発明の１実施例を説明す
るための回路図、フオト電界効果トランジスタの
断面図および電流電圧特性図、第１図ｄは本発明
の他の実施例に用いる絶縁ゲート型フオト電界効
果トランジスタの断面図、第２図ａ，ｂは本発明
の他の実施例を説明するための回路図、第３図
ａ，ｂは本発明の他の実施例に用いる電流制御回
路の回路図および断面図、第４図ａ，ｂ，ｃは本
発明の他の実施例を説明するための回路図であ
る。 D11，………Ｄ1o，D21，………Ｄ2n……発光ダ
イオード、Q1，Q2，Q1′……電流制御フオトトラ
ンジスタ。

Claims (1)

  1. 【特許請求の範囲】 １ 直列接続された発光ダイオードの順方向の動
    作電圧の和がほぼ商用電源電圧に等しくなる個数
    を含む発光ダイオード回路と該発光ダイオード回
    路と直列に光応答、電流制御、電流制限機能を兼
    ね備えた素子を接続した発光ダイオード表示装置
    において、該素子がソース、ドレイン、チヤンネ
    ル領域およびゲート領域を有したトランジスタで
    あつて前記チヤンネル領域に光を導入する入射窓
    を有し、入射光強度によつてゲート領域の実効電
    位が変化し光量に対して電流が飽和するトランジ
    スタを含むことを特徴とする発光ダイオード表示
    装置。 ２ 前記発光ダイオード回路が一方の極性で直列
    に接続された複数個の発光ダイオードの直列接続
    と、他方の極性で直列に接続された複数個の発光
    ダイオードの直列接続とが並列接続された並列回
    路を含むことを特徴とする前記特許請求の範囲第
    １項記載の発光ダイオード表示装置。
JP9061978A 1978-07-24 1978-07-24 Light emitting diode display Granted JPS5517180A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP9061978A JPS5517180A (en) 1978-07-24 1978-07-24 Light emitting diode display
US06/058,545 US4329625A (en) 1978-07-24 1979-07-17 Light-responsive light-emitting diode display
DE2929010A DE2929010C2 (de) 1978-07-24 1979-07-18 Leuchtdiodenanzeigevorrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9061978A JPS5517180A (en) 1978-07-24 1978-07-24 Light emitting diode display

Publications (2)

Publication Number Publication Date
JPS5517180A JPS5517180A (en) 1980-02-06
JPS6158836B2 true JPS6158836B2 (ja) 1986-12-13

Family

ID=14003495

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9061978A Granted JPS5517180A (en) 1978-07-24 1978-07-24 Light emitting diode display

Country Status (3)

Country Link
US (1) US4329625A (ja)
JP (1) JPS5517180A (ja)
DE (1) DE2929010C2 (ja)

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US4329625A (en) 1982-05-11
DE2929010C2 (de) 1985-04-25
JPS5517180A (en) 1980-02-06
DE2929010A1 (de) 1980-03-20

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