JPS6158964B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a metallized film capacitor for the purpose of improving the current intensity of a metallized portion.

Conventional metallized film capacitors are constructed by stacking and winding a pair of metal-deposited films with a widthwise offset of about 1 mm, leaving a non-vapor-deposited part (hereinafter referred to as the "margin part"). It had some problems. In other words, the end face of a capacitor element wrapped with a film is easily bent, and this phenomenon becomes more pronounced as the film becomes thinner, and when metallization is performed for connection to vapor-deposited metal and soldering to lead wires, the pressure at the time the metallization is attached causes the capacitor to bend. The end face of the element is further bent, and the contact between the metallicon metal and the deposited metal is incomplete, resulting in a decrease in current intensity.
In addition, as shown in FIG. 1, a metal-deposited film is wound to include a plurality of capacitor elements and then cut in the length direction to form individual capacitor elements. Although it has a margin part 3, since the film 1 itself is cut and the films are not wound one by one in a shifted manner, there are no gaps between the individual films 1. However, since the area in which the metallicon metal contacts the vapor-deposited metal 2 is very small, it has the disadvantage that the contact is incomplete.

The present invention has been made in view of the above points, and a capacitor element is obtained by winding and cutting a metal-deposited film so that it contains a plurality of capacitor elements when wound up. It is an object of the present invention to provide a manufacturing method capable of obtaining a metallized film capacitor that has extremely good contact with the metallized film capacitor.

First, an example using a single-sided vapor deposited film will be described. The metallized film used in the method of manufacturing the metallized film capacitor of the present invention is
As shown in the figure, a first metallized film 14 has a vapor-deposited metal 12 deposited on it leaving a plurality of rows of margin parts 11, and a through hole 13 is formed in the margin part 11.
As shown in FIG. 3, a margin part 16 is provided in the center of the film width, which is narrower than the first metallized film 14 and coated with the vapor-deposited metal 15, and a through hole 17 is provided in the margin part 16. A second metallized film 18 is prepared. These two metallized films 14 and 18 are arranged in the positional relationship shown in FIG. shall be. Therefore, the number of margin parts 11 of the first metallized film 14 is 1 greater than the number of margin parts 16 of the second metallized film 18.
Many columns, and two films 1 shown in Figure 4.
Four capacitor elements can be obtained from the combination of 4 and 18. In the case of the capacitor element constructed in this manner, one end face of the two capacitor elements obtained from both ends of the film is the first metallized film 18 because the second metallized film 18 is located inside the first metallized film 14. The metallicon metal is in good contact with the vapor-deposited metal 12 of the metallized film 14. On the other end face, the first metallized film 14 is cut into a continuous semicircle so as to divide the through hole 13, so that the vapor-deposited metal 15 of the second metallized film 18 can be seen from the semicircle. With this configuration, the metallcon metal easily contacts the vapor-deposited metal 15, and a good contact state can be obtained. The characteristics of the device having such a configuration will be described in comparison with a conventional example. In order to study the pulse current intensity for comparing the contact characteristics between the vapor deposited metal and the metallicon metal, a wound body having the film structure shown in FIG. 5 was prepared and used as a conventional example. In other words, the films are a polyethylene terephthalate (hereinafter referred to as PET) film with a thickness of 3μ and a width of 15mm, a metallized film 22 made by depositing Al 21, and a PET film with a thickness of 3μ and a width of 13mm.
Solder metal contacts are applied to both end surfaces of the wound body including the film 23. On the other hand, in the case of the present invention, as shown in FIG. 6, a metallized film 26 is obtained by cutting the structure shown in FIG.
As shown in the plan view of FIG. 7, a rolled film 28 having a thickness of 3 μm and a width of 15 mm and having continuous semicircular cut-out portions 27 at both ends and a rolled film 28 with solder metal contacts on both end surfaces was used as a sample. did. When various pulse currents were applied 100 times at an interval of 100 cycles/s to the metallic contact portions on both end faces of the samples of the conventional example and the present invention prepared by the method described above, the resistance value was 110% or more of the initial resistance value. FIG. 8 shows the cumulative failure rate for each pulse applied current when a product is determined to be defective, where curve A is for the conventional example and curve B is for the present invention.
As is clear from this result, in contrast to the conventional example where defects occur from low pulse currents and approximately 30% of all cases show extremely poor results, the present invention shows extremely stable values. Also, the variation is very small.

Next, an example in which a metallized film capacitor was manufactured and its characteristics were measured will be described. The configuration is as shown in Figure 2, with a width of 60 mm and a margin of 4 mm x 2.
The through hole is 2mmφ, the vapor deposited metal is Al, and the film resistance is 3.
It consists of a 3μ thick PET film with a resistance value of Ω/R, and the configuration shown in Figure 3, with a width of 56 mm, a margin of 4 mm, a through hole of 2 mmφ, and the vapor-deposited metal is Al, with a film resistance of 3 Ω/R. 3μ thick PET with
A wound body was obtained by arranging and winding the film as shown in Fig. 4, and cutting the wound body from the center of the through hole to insert four capacitor elements with a rating of 100 V.DC - 1.0 ^μF . Created. The tan δ at 100 KHz was measured for 50 capacitor elements which were soldered on both end faces and then covered with resin, and the cumulative frequency of the distribution is shown in curve B in FIG. Curve A is a conventional example, and the width is as shown in Figure 10.
15 mm, margin part 31, 2 mm, vapor deposited metal 32, film resistance, thickness, etc. are the same as those of the present invention.
50 capacitor elements having a rating of 100 V.DC - 1.0 ^μF were prepared by overlapping and winding the films 33 and 34 with a 1 mm offset from each other, and after applying solder metal contact to both end faces of the capacitor elements, the capacitor elements were covered with resin. This figure shows the cumulative frequency of distribution of tan δ under the same conditions as in the present invention. As is clear from Figure 9, in the case of the present invention, it is in the range of 3.1% to 3.6%, while in the case of the conventional example, as many as 30% exceed 3.6%, and it varies up to 7%. The difference with the present invention is obvious. Therefore, the metallized film capacitor manufactured by the method of manufacturing the metallized film capacitor of the present invention has extremely low contact resistance between the vapor-deposited metal and the metallicon metal, and also has small variations, thereby providing a stable metallized film capacitor with excellent tanδ characteristics. can do. In the examples, a PET film was used as the film, but one or two of polycarbonate, polypropylene, polyvinylidene fluoride, polybutylene terephthalate, polyethylene naphthalate, polysulfone, polyacetal, polyimide, polyamide, etc. Similar effects can be obtained even when using a combination configuration as described above. Furthermore, although the case has been described in which the through hole provided in the margin part is a round hole, this is not limited to a round hole, and the same effect can be applied to a through hole such as a diamond shape, a square shape, or an oval shape. Furthermore, when narrow margins are provided along the end faces of the vapor-deposited metal 15 at both ends of the second metallized film 18 shown in FIGS. 3 and 4, the capacitor element obtained by cutting the metallized film 18 is As shown in FIG. 11, the metallized film 38 on which the vapor-deposited metal 35 is formed is provided with a margin part 37 consisting of unevenness 36 at both ends. - The capacitor element obtained by metallization has the advantage that the current intensity can be further improved than that of the capacitor element having the structure shown in FIG.

[Brief explanation of the drawing]

FIG. 1 is an explanatory diagram showing the structure of a capacitor element manufactured by a conventional manufacturing method, FIGS. 2 and 3 are plan views showing an example of the film used in the present invention, and FIG. A configuration diagram showing the superimposed state of the films shown in Fig. 5 and Fig. 4.
, 6 and 7 show the film structure of a sample used to study the pulse current intensity between the vapor deposited metal and the metallicon metal.
FIG. 6 is an explanatory diagram of the present invention, FIG. 7 is a plan view of the present invention, FIG. 8 is a curve diagram showing the relationship between pulse current intensity and cumulative defect rate of the present invention and the conventional example, and FIG. 9 is a diagram of the present invention. Capacitors manufactured according to the invention and conventional examples
A curve diagram showing tan δ and the cumulative frequency of the tan δ value, FIG. 10 is an explanatory diagram showing the film structure of the conventional capacitor shown in FIG. 9, and FIG. 11 is an illustration of another film used in the present invention. FIG. 2 is a plan view showing an example. DESCRIPTION OF SYMBOLS 11... Margin part, 12... Vapor deposited metal, 13... Through hole, 14... First metallized film, 15... Vapor deposited metal, 16... Margin part, 17... Through hole, 18...
Second metallized film.

Claims (1)

[Scope of Claims] 1. A first metallized film in which at least two rows of margin portions having through holes are formed, and a margin that is narrower in width than the first metallized film and has one row fewer through holes. a step of superimposing and winding a second metallized film with a second metallized film formed thereon, a step of cutting from the center of each through hole after the winding step to obtain a capacitor element, and a step of cutting both end faces of the capacitor element. A method for manufacturing a metallized film capacitor, comprising the step of applying metallicon to the metallized film capacitor. 2. The method of manufacturing a metallized film capacitor according to claim 1, wherein the shape of the through hole is round, diamond, square, or elliptical. 3 The metallized film is one of polyethylene terephthalate, polycarbonate, polypropylene, polyvinylidene fluoride, polybutylene terephthalate, polyethylene naphthalate, polysulfone, polyacetal, polyimide, polyamide, etc.
3. The method for manufacturing a metallized film capacitor according to claim 1 or 2, characterized in that the metallized film capacitor is made of a species or a combination of two or more species. 4. Any one of claims 1 to 3, characterized in that the second metallized film is provided with a narrow margin part or a margin part having uneven ends at both ends. The method for manufacturing a metallized film capacitor according to the invention.