JPS6160426B2 - - Google Patents
Info
- Publication number
- JPS6160426B2 JPS6160426B2 JP11549885A JP11549885A JPS6160426B2 JP S6160426 B2 JPS6160426 B2 JP S6160426B2 JP 11549885 A JP11549885 A JP 11549885A JP 11549885 A JP11549885 A JP 11549885A JP S6160426 B2 JPS6160426 B2 JP S6160426B2
- Authority
- JP
- Japan
- Prior art keywords
- plating layer
- photoresist
- mask
- model
- patterns
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000007747 plating Methods 0.000 claims description 54
- 229920002120 photoresistant polymer Polymers 0.000 claims description 26
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 9
- 238000002844 melting Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- 238000002679 ablation Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims description 2
- 238000004381 surface treatment Methods 0.000 claims description 2
- 230000003064 anti-oxidating effect Effects 0.000 claims 1
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000003466 welding Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000001259 photo etching Methods 0.000 description 8
- 238000005323 electroforming Methods 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 239000000839 emulsion Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/88—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof prepared by photographic processes for production of originals simulating relief
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Description
【発明の詳細な説明】
この発明は金属表面に所定の模様、文字、溝等
を加工する一加工法であるフオトフアブリケーシ
ヨンに使用するマスクの製作方法に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a mask used in photoablation, which is a processing method for forming predetermined patterns, characters, grooves, etc. on a metal surface.
フオトフアブリケーシヨンにおいて、通常の工
程で使用するマスクはエマルジヨン層を持つフイ
ルム製が主であるが、このフイルム製マスクは、
被加工物とエマルジヨン層とを密着させて使用す
るために傷が付き易く、またプラスチツクフイル
ムをベースとしているため、変形による歪みも多
く発生し、銀塩膜のむらや剥離により、ピンホー
ルができやすい等の多くの欠点を持つている。こ
のような理由で、フイルム製マスクは量産用には
不適当である。 In photo ablation, the masks used in the normal process are mainly made of film with an emulsion layer.
Because the workpiece and emulsion layer are used in close contact with each other, they are easily scratched, and because they are based on plastic film, they are prone to distortion due to deformation, and pinholes are easily formed due to unevenness and peeling of the silver salt film. It has many drawbacks such as. For these reasons, film masks are unsuitable for mass production.
以上のような欠点がないフオトフアブリケーシ
ヨン用マスクとして、一般にはハードマスクと呼
ばれるガラス板上に金属蒸着膜の模様をつけたマ
スクが使用されているが、高価であり、かつ複雑
微細な立体形状のマスクの製作は不可能である。 As a mask for photoablation that does not have the above disadvantages, a mask with a pattern of metal vapor deposited film on a glass plate, called a hard mask, is generally used, but it is expensive and has complicated and fine patterns. It is impossible to manufacture a three-dimensional mask.
立体形状のフオトエツチング用マスクについて
は、特開昭51―131432号公報に示されたような電
鋳によるフオトエツチング用マスクの製作方法が
ある。この方法の場合はメツキ層の厚さが厚いと
第1図に示されたように、フオトレジスト2上に
メツキ3がはみ出す現象が生じるため、被加工物
に形成するための模様、文字、溝等の輪郭の精度
が悪くなる。しかし、上記の現象を防止するため
にメツキ層の厚みを薄くすると、被加工物と同形
状に作られた模型1からの剥離が極めて困難にな
り、かりに剥離できたとしても、メツキ層が薄い
ためその形状を変形しないように維持することは
極めて難しい。 Regarding three-dimensional photo-etching masks, there is a method of manufacturing photo-etching masks by electroforming as disclosed in Japanese Patent Application Laid-Open No. 131432/1983. In the case of this method, if the thickness of the plating layer is thick, the plating 3 will protrude onto the photoresist 2 as shown in FIG. etc., the accuracy of the contour becomes poor. However, if the thickness of the plating layer is reduced in order to prevent the above phenomenon, it becomes extremely difficult to peel it off from the model 1, which is made in the same shape as the workpiece, and even if it is peeled off, the plating layer is thin. Therefore, it is extremely difficult to maintain its shape without deforming it.
この発明は、前記の電鋳技術を利用して作られ
るフオトエツチング用マスクの製作において、比
較的簡単な加工を加えることにより、マスクとし
ての精度を落さず、しかも被加工物のフオトエツ
チングの量産加工に充分耐え得る強度をもつたフ
オトフアブリケーシヨン用マスクの製作方法の提
供を目的とするものである。 In the production of a photo-etching mask using the electroforming technology described above, the present invention adds relatively simple processing to the photo-etching mask without sacrificing the accuracy of the mask, and also improves the photo-etching of the workpiece. The object of the present invention is to provide a method for manufacturing a mask for photoablation that has sufficient strength to withstand mass production processing.
次にこの発明の実施例を図を参照しながら説明
する。まずフオトエツチング用マスクを使用して
フオトエツチングする被加工物と同形状の導電性
材料よりなる模型1または導電性被膜を被覆した
模型を製作する。この模型1は被加工物の形状如
何により、ほぼ同寸法のものを用意する必要があ
る。この模型1の表面11には、後工程における
メツキがむらにならないように、かつ金属マスク
となるメツキ層が容易に剥離できるように洗浄お
よび酸化被膜形成などの表面処理を行う。次に模
型1の表面11にフオトレジストを塗布し、これ
が乾燥したら、通常の露光、現象に使用されるよ
うな第1のフオトマスク41をフオトレジストが
塗布された模型1にかぶせ、露光、現象を行い、
模型1の表面11に、被加工物に加工する模様、
文字、溝等をフオトレジスト21により形成させ
る。次に模型1における前記フオトレジスト21
のない表面部分にメツキを行い、第1のメツキ層
31を形成させる。この場合に第1のメツキ層3
1の厚さがフオトレジスト21の厚さ以内であれ
ば、第1のフオトマスクと同程度の輪郭精度を保
つことができるが、メツキ層31の厚さがフオト
レジスト21の厚さを越えると、前述したよう
に、第1図にみられるようなアツパーデポジツト
と呼ばれる電鋳特有の現象が生じ、厚みの増加と
共に、急激に精度の低下が見られる。このような
理由から精度を保つ上で、メツキ層31の厚さは
フオトレジスト21と同じ厚さか、またはそれ以
下にする必要がある。この第1回目のメツキ作業
によつて形成された第1のメツキ層31上および
フオトレジスト上に再びフオトレジスト20を第
3図に示されたよすうに塗布し、乾燥する。次い
で最初に用いた第1のフオトマスクより若干小さ
い所定の模様、文字、溝等をもつた第2のフオト
マスク42を用いて、露光、現象を行う。このよ
うなマスク42を使用することにより、現象後に
は最初に形成された第1のメツキ層31上のフオ
トレジストの中、メツキ層の面積より若干小さい
部分のフオトレジストが溶解するようにする。次
にこのフオトレジストが溶けて露出した第1のメ
ツキ層上に再びメツキを行い、第2のメツキ層を
形成する。 Next, embodiments of the present invention will be described with reference to the drawings. First, using a photoetching mask, a model 1 made of a conductive material or coated with a conductive film having the same shape as the workpiece to be photoetched is manufactured. The model 1 needs to have approximately the same size depending on the shape of the workpiece. The surface 11 of this model 1 is subjected to surface treatments such as cleaning and formation of an oxide film so that the plating in subsequent steps will not be uneven and the plating layer that will become a metal mask can be easily peeled off. Next, photoresist is applied to the surface 11 of the model 1, and when it dries, a first photomask 41, such as that used for normal exposure and phenomena, is placed over the model 1 coated with photoresist, and the photoresist is applied. conduct,
On the surface 11 of the model 1, a pattern to be processed into the workpiece,
Characters, grooves, etc. are formed using photoresist 21. Next, the photoresist 21 in model 1
A first plating layer 31 is formed by plating the surface portion where there is no plating. In this case, the first plating layer 3
If the thickness of the plating layer 31 is within the thickness of the photoresist 21, the same level of contour accuracy as the first photomask can be maintained, but if the thickness of the plating layer 31 exceeds the thickness of the photoresist 21, As mentioned above, a phenomenon peculiar to electroforming called upper deposit occurs as shown in FIG. 1, and as the thickness increases, the accuracy rapidly decreases. For this reason, in order to maintain accuracy, the thickness of the plating layer 31 needs to be equal to or less than the thickness of the photoresist 21. Photoresist 20 is again applied on the first plating layer 31 and the photoresist formed by this first plating operation as shown in FIG. 3, and dried. Next, exposure and phenomena are performed using a second photomask 42 having predetermined patterns, letters, grooves, etc. that are slightly smaller than the first photomask used initially. By using such a mask 42, a portion of the photoresist on the first plating layer 31 formed initially, which is slightly smaller than the area of the plating layer, is dissolved. Next, the photoresist is melted and the exposed first plating layer is plated again to form a second plating layer.
この第2のメツキ層32が完成したら、さらに
第2のメツキ層32およびフオトレジスト22上
にフオトレジストを塗布、乾燥し、第2回目に用
いたマスクと同じか、または小さい所要の模様、
文字、溝等をもつたマスクを用いてフオトエツチ
ングを実施する。そして露出されたメツキ層表面
にさらに第3のメツキ層33を形成する。以上の
工程を必要に応じて何回も繰返すことにより、多
層のメツキ層が得られるが、本実施例では3層と
する。 When this second plating layer 32 is completed, a photoresist is further applied on the second plating layer 32 and the photoresist 22, dried, and a desired pattern, which is the same as or smaller than the mask used for the second time, is formed.
Photo etching is carried out using a mask with letters, grooves, etc. Then, a third plating layer 33 is further formed on the exposed surface of the plating layer. By repeating the above steps as many times as necessary, multiple plating layers can be obtained, and in this example, there are three layers.
次に第5図に示されたように模型1の表面がフ
オトレジスト層25と多層のメツキ層で覆われた
状態で、低融点金属例えば適度の粘度のハンダ溶
融体を多層メツキ層の上層に塗布する。このハン
ダの溶解体が冷却すれば、第6図に示されたよう
に多層金属メツキ層の上にハンダ層5が溶着固化
した剛性および強度の大きいマスクが得られる。 Next, as shown in FIG. 5, with the surface of the model 1 covered with the photoresist layer 25 and the multilayer plating layer, a low melting point metal, such as a solder melt with an appropriate viscosity, is applied to the upper layer of the multilayer plating layer. Apply. When this melted solder is cooled, a mask with high rigidity and strength is obtained in which the solder layer 5 is welded and solidified on the multilayer metal plating layer as shown in FIG.
以上の実施例では被加工物が平板状のもの、従
つて対応する模型も平板上のものについて説明し
たが、上記の方法は、立体的、複雑な形状を呈す
る被加工物用のマスクの製作についても適用出来
るものである。 In the above embodiments, the workpiece is a flat plate, and therefore the corresponding model is also a flat plate. However, the above method is suitable for manufacturing a mask for a workpiece that has a three-dimensional, complex shape. This can also be applied to
この発明のマスクの製作方法は、多層の金属層
に低融点金属を比較的手軽に塗布出来るので、コ
ストのかからない方法であり、しかも製作された
マスクは、多層金属層の厚さがせいぜい10ミクロ
ン程度であるのに対し、低融点金属の厚さは数
100ミクロンであり、多層金属のみよりなるマス
クに比較して、厚さが格段に増加するので、剛
性、強度が著しく増大し、耐久性においても優れ
ている。 The mask manufacturing method of this invention is a low-cost method because it is relatively easy to apply a low melting point metal to multiple metal layers, and the manufactured mask has a multilayer metal layer with a thickness of at most 10 microns. The thickness of low melting point metals is several degrees, whereas the thickness of low melting point metals is several degrees.
The thickness is 100 microns, which is significantly greater than a mask made only of multilayer metal, resulting in significantly increased rigidity and strength, and excellent durability.
また本発明により製作されたマスクはメツキ電
鋳等に起因する多層金属層における内部応力によ
る変形を低融点金属層により抑制するので、マス
クの変形は少なく、所要の模様、文字、溝等は正
確に形成されているので、このマスクを使用して
被加工物をフオトエツチングすれば精度の高い模
様、文字、溝等をもつた被加工物を得ることがで
きる。 In addition, since the mask manufactured according to the present invention suppresses deformation due to internal stress in the multilayer metal layer caused by plating electroforming etc. with the low melting point metal layer, the deformation of the mask is small and the required patterns, letters, grooves, etc. are accurately formed. Therefore, by photo-etching a workpiece using this mask, a workpiece with highly accurate patterns, letters, grooves, etc. can be obtained.
第1図は従来の電鋳による金属マスクの製作過
程の一部を示す断面図、第2図ないし第6図はこ
の発明の実施例を示す断面図で、第2図はマスク
としての第1の金属メツキ層を得る方法を示す断
面図、第3図は第2の金属メツキ層を得るための
準備工程を示す断面図、第4図は第2の金属メツ
キ層が得られたことを示す断面図、第5図はマス
クとしての多層の金属メツキ層が得られた状態の
断面図、第6図は上記の多層の金属メツキ層に、
さらに溶解したハンダを溶着して固化した状態を
示す断面図である。
符号の説明、1は模型、20はフオトレジス
ト、2,21,22は露光現象後のフオトレジス
ト、3はメツキ層、31は第1のメツキ層、32
は第2のメツキ層、33は第3のメツキ層、5は
ハンダ層。
FIG. 1 is a sectional view showing a part of the manufacturing process of a metal mask by conventional electroforming, FIGS. 2 to 6 are sectional views showing an embodiment of the present invention, and FIG. FIG. 3 is a cross-sectional view showing the preparation process for obtaining the second metal plating layer, and FIG. 4 shows that the second metal plating layer has been obtained. 5 is a cross-sectional view of a state in which a multilayer metal plating layer as a mask has been obtained, and FIG. 6 is a cross-sectional view of the multilayer metal plating layer described above,
FIG. 7 is a cross-sectional view showing a state in which the melted solder is further welded and solidified. Explanation of the symbols: 1 is a model, 20 is a photoresist, 2, 21, 22 is a photoresist after an exposure phenomenon, 3 is a plating layer, 31 is a first plating layer, 32
3 is the second plating layer, 33 is the third plating layer, and 5 is the solder layer.
Claims (1)
の表面部にメツキのムラ防止やメツキ層の剥離の
容易性のための洗浄および酸化防止被膜形成等の
表面処理を行い、その表面にフオトレジストの被
膜を形成し、予め用意した所要の溝や模様等を有
する第1のフオトマスクを使用し、露光、現象を
行つて模型の表面部にフオトレジストによる所要
の溝や模様等を形成させ、次に前記表面部にメツ
キを行い、メツキ完了後、模型からメツキ層を取
外して所要の溝や模様等を有する金属マスクを製
作する方法において、模型表面部に金属マスク用
のメツキ層を形成後、このメツキ層を模型に附着
させたまゝの状態で、フオトレジスト上およびメ
ツキ層表面にフオトレジストによる第2の被膜を
形成させ、前記第1のマスクより小さい所要の溝
や模様等を有する第2のマスクを第2の被膜にか
ぶせて、前記と同様の手段でフオトレジストによ
り溝や模様等を形成させ、最初の金属メツキ層上
にさらに第2のメツキ層を形成させ、次にこの第
2のメツキ層上にフオトレジストによる第3の被
膜を形成させ、所要の溝や模様等を有する第3の
マスクを前記第3のフオトレジスト被膜にかぶせ
て、前記と同様の手段でフオトレジストによる溝
や模様等を形成させ、第2のメツキ層上にさらに
第3のメツキ層を形成させ、以下必要に応じ上記
の順序にしたがつてメツキ層の上にメツキ層を形
成してその厚さを増し、多層のメツキ層を模型に
附着させたままの状態で、さらにメツキ層上に低
融点金属を溶着して、より剛性の大きい金属製マ
スクを得ることを特徴とするフオトフアブリケー
シヨン用マスクの製作方法。1 The surface of a conductive model with approximately the same dimensions and shape as the workpiece is subjected to surface treatments such as cleaning and formation of an anti-oxidation film to prevent uneven plating and ease of peeling off the plating layer. A film of photoresist is formed, and using a first photomask having required grooves, patterns, etc. prepared in advance, exposure and phenomenon are performed to form the required grooves, patterns, etc. by photoresist on the surface of the model. , Next, the surface portion is plated, and after the plating is completed, the plating layer is removed from the model to produce a metal mask having required grooves, patterns, etc. In the method, a plating layer for the metal mask is formed on the model surface portion. After that, with this plating layer still attached to the model, a second film of photoresist is formed on the photoresist and on the surface of the plating layer, and has required grooves, patterns, etc. smaller than the first mask. A second mask is placed over the second coating, grooves, patterns, etc. are formed using photoresist using the same method as described above, a second plating layer is further formed on the first metal plating layer, and then a second plating layer is formed on the first metal plating layer. A third film of photoresist is formed on the second plating layer, a third mask having required grooves, patterns, etc. is placed over the third photoresist film, and the photoresist is applied in the same manner as described above. A third plating layer is further formed on the second plating layer, and then a plating layer is formed on the plating layer in the above order as necessary to adjust its thickness. The photo ablation method is characterized in that a metal mask with greater rigidity is obtained by further welding a low melting point metal onto the plating layer while the multilayer plating layer remains attached to the model. How to make a mask for Yong.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60115498A JPS612156A (en) | 1985-05-30 | 1985-05-30 | How to make a mask for photoablation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60115498A JPS612156A (en) | 1985-05-30 | 1985-05-30 | How to make a mask for photoablation |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9949077A Division JPS5433671A (en) | 1977-08-22 | 1977-08-22 | Method of producing mask for photofabrication |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS612156A JPS612156A (en) | 1986-01-08 |
| JPS6160426B2 true JPS6160426B2 (en) | 1986-12-20 |
Family
ID=14663996
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60115498A Granted JPS612156A (en) | 1985-05-30 | 1985-05-30 | How to make a mask for photoablation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS612156A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0648144U (en) * | 1992-12-04 | 1994-06-28 | サンクス株式会社 | Photoelectric switch |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5153084A (en) * | 1990-09-10 | 1992-10-06 | General Electric Company | Process for preparing a photo-mask for imaging three-dimensional objects |
-
1985
- 1985-05-30 JP JP60115498A patent/JPS612156A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0648144U (en) * | 1992-12-04 | 1994-06-28 | サンクス株式会社 | Photoelectric switch |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS612156A (en) | 1986-01-08 |
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